Responsive To Nonelectrical External Signals (e.g., Light) Patents (Class 257/53)
  • Publication number: 20100133536
    Abstract: Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.
    Type: Application
    Filed: August 3, 2006
    Publication date: June 3, 2010
    Inventors: Althanasios J. Syllaios, Thomas R. Schimert, Michael F. Taylor
  • Publication number: 20100133537
    Abstract: To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.
    Type: Application
    Filed: December 28, 2009
    Publication date: June 3, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Publication number: 20100134735
    Abstract: Thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are easily arranged in a matrix over a large substrate and have small characteristic variations. With amplifier circuits and driver circuits of display elements which include the thin film transistors including an oxide semiconductor containing indium, gallium, and zinc with small characteristic variations, intensity distribution of light received by the photodiodes arranged in a matrix is converted into electrical signals with high reproducibility and output, and the display elements arranged in a matrix can be uniformly driven.
    Type: Application
    Filed: November 24, 2009
    Publication date: June 3, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuo NAKAMURA, Yoshifumi TANADA
  • Patent number: 7709288
    Abstract: The present invention provides a method for manufacturing a multi-junction solar cell which makes it possible to implement a 4-junction solar cell and to increase the area of a device. A nucleus generation site is disposed on a substrate 2 made of a first semiconductor. A first material gas is fed to the nucleus generation site to form a wire-like semiconductor 3 in the nucleus generation site. A third material gas and a fourth material gas are fed to form a wire-like semiconductor 4 on the semiconductor 3 and a wire-like semiconductor 5 on the semiconductor 4. A nucleus generation site is disposed on a substrate 6. The first material gas is fed to the nucleus generation site to form a wire-like semiconductor 2a in the nucleus generation site. A second material gas to the fourth material gas are fed to form the wire-like semiconductor 3 on the semiconductor 2a, the wire-like semiconductor 4 on the semiconductor 3, and the wire-like semiconductor 5 on the semiconductor 4.
    Type: Grant
    Filed: July 17, 2007
    Date of Patent: May 4, 2010
    Assignee: Honda Motor Co., Ltd.
    Inventor: Hajime Goto
  • Patent number: 7693360
    Abstract: On the back surface of a transparent plate having a light extracting part for outputting lights to the outside, an electrode for wiring, and an electrode for an electromagnetic shield, an optical device is flip-chip mounted right under the light extracting part, an a driver IC is flip-chip mounted at a desired position with metal bumps. When currents driving the optical device flow from the driver IC according to an electric logical signal from the outside, an optical signal is emitted from the optical device, and is output to the outside through the light extracting part. The light extracting part may be provided with a light coupling material or an optical axis converter.
    Type: Grant
    Filed: April 18, 2003
    Date of Patent: April 6, 2010
    Assignee: NEC Corporation
    Inventors: Takanori Shimizu, Takara Sugimoto, Jun-ichi Sasaki, Kazuhiko Kurata
  • Publication number: 20100078637
    Abstract: A photoelectric conversion element includes a light receiving layer that is formed of microcrystal semiconductor, a first semiconductor layer of a first conductive type that is formed on one face side of the light receiving layer, and a first intermediate layer that is interposed between the first semiconductor layer and the light receiving layer and is formed of amorphous semiconductor.
    Type: Application
    Filed: July 24, 2009
    Publication date: April 1, 2010
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Tomotaka MATSUMOTO, Tsukasa EGUCHI
  • Publication number: 20100078071
    Abstract: A photoelectric conversion device includes one or more unit cells between a first electrode and a second electrode, in which a semiconductor junction is formed by sequentially stacking: a first impurity semiconductor layer of one conductivity type; an intrinsic non-single-crystal semiconductor layer including an NH group or an NH2 group; and a second impurity semiconductor layer of opposite conductivity type to the first impurity semiconductor layer. In the non-single-crystal semiconductor layer of a unit cell on a light incident side, the nitrogen concentration measured by secondary ion mass spectrometry is 5×1018/cm3 or more and 5×1020/cm3 or less and oxygen and carbon concentrations measured by secondary ion mass spectrometry are less than 5×1018/cm3.
    Type: Application
    Filed: September 24, 2009
    Publication date: April 1, 2010
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Takuya Hirohashi, Akihisa Shimomura
  • Publication number: 20100078638
    Abstract: An image sensor and a method of fabricating an image sensor. An image sensor may include a readout circuitry arranged over a semiconductor substrate, an interlayer dielectric film provided with metal lines arranged over a semiconductor substrate, and/or a lower electrode arranged over a interlayer dielectric film such that a lower electrode may be connected to metal lines. An image sensor may include a first-type conductive layer pattern arranged over a lower electrode, an intrinsic layer arranged over a surface of a semiconductor substrate such that an intrinsic layer may substantially cover a first-type conductive layer pattern. An image sensor may include a second-type conductive layer arranged over an intrinsic layer. A method of fabricating an image sensor may include a patterned n-type amorphous silicon layer which may be treated with N2O plasma. A method of fabricating an image sensor may include H2 annealing.
    Type: Application
    Filed: September 29, 2009
    Publication date: April 1, 2010
    Inventors: Han-Choon Lee, Oh-Jin Jung
  • Patent number: 7649201
    Abstract: An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.
    Type: Grant
    Filed: April 7, 2006
    Date of Patent: January 19, 2010
    Assignee: Micron Technology, Inc.
    Inventor: Chandra Mouli
  • Patent number: 7642114
    Abstract: To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: January 5, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Patent number: 7642107
    Abstract: A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: January 5, 2010
    Assignee: Aptina Imaging Corporation
    Inventor: John Ladd
  • Publication number: 20090321736
    Abstract: An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.
    Type: Application
    Filed: April 14, 2009
    Publication date: December 31, 2009
    Inventors: Myoung-Shik KIM, Hyung-Jun KIM
  • Patent number: 7638799
    Abstract: An image sensor structure includes a plurality of pixels formed on a substrate. Each pixel includes an image senor interconnect structure, a separator layer and an electrode layer, wherein the separator layer has a first thickness an a sidewall of the separator layer is recessed from a sidewall of the electrode layer. A first doped amorphous silicon layer id formed on the electrode layer, wherein the separator layer and the first doped amorphous silicon layer of a pixel are disconnected from that of an adjacent pixel.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: December 29, 2009
    Assignee: Powerchip Semiconductor Corp.
    Inventors: Jin-Wei Chang, Hong-Xian Wang
  • Publication number: 20090315030
    Abstract: Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.
    Type: Application
    Filed: June 17, 2009
    Publication date: December 24, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Soo Young Choi, Jriyan Jerry Chen, Tae Kyung Won, Dong-Kil Yim
  • Patent number: 7619240
    Abstract: This semiconductor photodetector consists of a diode with at least two heterojunctions comprising two external layers, a first layer with a given kind or type of doping and a second layer with a kind or type of doping opposite to that of the first layer, the bandgap width of these two layers being determined as a function of the energy and hence the wavelength or wavelength band that they are each intended to detect, these two layers being separated from each other by an intermediate layer having the same kind or type of doping as one of said first and second layers, said diode being subjected to a bias voltage of adjustable value between the two external layers. The bandgap width of the intermediate layer is greater than that of the layer that has the same type of doping as layer.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: November 17, 2009
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Johan Rothman
  • Publication number: 20090278121
    Abstract: A system for displaying images includes a thin film transistor array substrate including a substrate with thin film transistors array and at least one light-sensing element containing an amorphous silicon layer formed on the substrate, wherein the light-sensing element has a current flow direction perpendicular to the substrate.
    Type: Application
    Filed: April 21, 2009
    Publication date: November 12, 2009
    Applicant: TPO Displays Corp.
    Inventors: Ramesh Kakkad, Keiichi Sano, Fu-Yuan Hsueh, Chih-Chung Liu, Sheng-Wen Chang
  • Patent number: 7615730
    Abstract: A wavelength meter, an associated method, and system are generally described. In one example, an apparatus includes a photodiode to receive an optical signal and to generate a photocurrent upon receiving the optical signal, the photodiode having an absorption edge that is substantially aligned with a band of wavelengths, wherein the absorption edge shifts toward longer wavelengths when a reverse bias is applied to the photodiode, and control electronics coupled with the photodiode to apply at least a first reverse bias and a second reverse bias to the photodiode, wherein a ratio of a first measurement of the photocurrent at the first reverse bias and a second measurement of the photocurrent at the second reverse bias provides information about the wavelength of the optical signal.
    Type: Grant
    Filed: November 30, 2007
    Date of Patent: November 10, 2009
    Assignee: Intel Corporation
    Inventors: Sergei Sochava, John Hutchinson
  • Publication number: 20090250699
    Abstract: The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and occurrence of breakage of lead-out wires. An interlayer insulating film is formed so as to cover TFT switches on a substrate. An interlayer insulating film is formed so as to cover semiconductor layer of sensor portions that generate charges due to electromagnetic waves that are an object of detection being irradiated, and cover a region on the substrate where the interlayer insulating film is formed.
    Type: Application
    Filed: March 27, 2009
    Publication date: October 8, 2009
    Applicant: FUJIFILM CORPORATION
    Inventor: Yoshihiro Okada
  • Publication number: 20090212285
    Abstract: The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.
    Type: Application
    Filed: February 12, 2009
    Publication date: August 27, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazuo NISHI, Toru TAKAYAMA, Yuugo GOTO
  • Publication number: 20090206337
    Abstract: An image sensor includes a lower metal interconnection, an interlayer dielectric, a first substrate, a photodiode, an upper electrode and an amorphous silicon layer. The lower metal interconnection and the interlayer dielectric are formed over the first substrate including a pixel region and a peripheral region. The photodiode is formed over the pixel region of the first substrate. The upper electrode layer is connected to the photodiode. The amorphous silicon layer is formed between the photodiode and the interlayer dielectric.
    Type: Application
    Filed: December 27, 2008
    Publication date: August 20, 2009
    Inventor: Sung-Ho Jun
  • Patent number: 7572668
    Abstract: Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and can prevent surface damage of the organic semiconductor layer and a method of manufacturing the organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor are provided. The method of patterning the organic thin film includes forming the organic thin film on a substrate, selectively printing a mask material on a portion of the organic thin film, dry etching an exposed portion of the organic thin film using the mask material, and removing the mask material.
    Type: Grant
    Filed: March 16, 2006
    Date of Patent: August 11, 2009
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Min-Chul Suh, Jae-Bon Koo
  • Patent number: 7566905
    Abstract: An electro-optical apparatus includes a base, a resin film on the base, the resin film having at least one of projections and depressions at an upper surface thereof, and a light reflecting film disposed on the at least one of projections and depressions. The resin film under the light reflecting film includes a first region and a second region. A mode of the at least one of projections and depressions in the first region is different from a mode of the at least one of projections and depressions in the second region. A diffuse reflectivity of the first region is larger than a diffuse reflectivity of the second region.
    Type: Grant
    Filed: January 9, 2007
    Date of Patent: July 28, 2009
    Assignee: Epson Imaging Devices Corporation
    Inventor: Reiko Wachi
  • Publication number: 20090186440
    Abstract: Apparatus and methods for forming optoelectronic devices such as an array of light emitting diodes or photovoltaic cells in one embodiment a roll-to-roll process in which a uniquely configured roller having a raised spiral coating surface is aligned with a plurality of first electrodes disposed on an angle on a substrate for coating a plurality of spaced-apart angled coated strips of optoelectronic materials along the cross-web direction of the substrate.
    Type: Application
    Filed: January 21, 2008
    Publication date: July 23, 2009
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Anil Raj DUGGAL, Hak Fei POON, Svetlana ROGOJEVIC
  • Publication number: 20090173940
    Abstract: An image sensor can include a first substrate, an amorphous layer, and a photodiode. A circuitry including a metal interconnection can be formed on the first substrate. The amorphous layer is disposed over the first substrate, and contacts the metal interconnection. The photodiode can be formed in a crystalline semiconductor layer and is bonded to the first substrate such that the photodiode contacts the amorphous layer and is electrically connected to the metal interconnection.
    Type: Application
    Filed: December 12, 2008
    Publication date: July 9, 2009
    Inventor: Joon Hwang
  • Publication number: 20090166791
    Abstract: Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, an interlayer insulating layer including a metal line may be formed on and/or over a semiconductor substrate. A lower electrode layer connected with the metal line may be formed on and/or over the interlayer insulating layer. A photoresist pattern may be formed on and/or over the lower electrode layer and may form lower electrodes separated from each other. The photoresist pattern may be removed. A polymer with Cl group that may be generated when removing the photoresist pattern may be removed. According to embodiments, by removing the polymer, photons that may be generated in a photo diode may be more easily gathered, which may enhance an image quality of an image sensor.
    Type: Application
    Filed: December 26, 2008
    Publication date: July 2, 2009
    Inventor: Chung-Kyung Jung
  • Publication number: 20090166628
    Abstract: An image sensor includes a first substrate having a circuitry including a wire formed therein and a photodiode formed above the circuitry. An unevenness is formed at the top of the photodiode. The unevenness may, for example, be formed by selectively etching the top of the photodiode and may act to maximize light absorption by the photodiode.
    Type: Application
    Filed: December 27, 2008
    Publication date: July 2, 2009
    Inventor: Chang-Hun Han
  • Publication number: 20090166627
    Abstract: An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.
    Type: Application
    Filed: December 26, 2008
    Publication date: July 2, 2009
    Inventor: Chang-Hun Han
  • Publication number: 20090153882
    Abstract: Dimensional parameters of structures on a substrate are measured by providing a substrate with a structured surface. The structured surface includes a number of juxtaposed structural elements. A radiation source is configured to emit a beam of radiation having a wavelength in the infrared range. The substrate is illuminated with the beam of radiation. A signal corresponding to a part of the beam of radiation being transmitted through the substrate is detected. Dimensional parameters of the structural elements are calculated based on the transmitted beam signal.
    Type: Application
    Filed: December 14, 2007
    Publication date: June 18, 2009
    Inventors: Thomas Geiler, Manfred Moert
  • Publication number: 20090140249
    Abstract: An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
    Type: Application
    Filed: December 23, 2008
    Publication date: June 4, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Daiki YAMADA, Yoshitaka DOZEN, Eiji SUGIYAMA, Hidekazu TAKAHASHI
  • Publication number: 20090114916
    Abstract: A photoelectric conversion device includes an intrinsic semiconductor layer, a first conductive type semiconductor layer disposed on a first side of the intrinsic semiconductor layer, and a second conductive type semiconductor layer disposed on a second side of the intrinsic semiconductor layer opposite the first side. The intrinsic semiconductor layer includes an amorphous semiconductor layer and a crystalline semiconductor layer including a plurality of crystals. A diameter of a crystal of the plurality of crystals is equal to or less than approximately 100 angstroms.
    Type: Application
    Filed: October 27, 2008
    Publication date: May 7, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Ho CHOO, Dong-Cheol KIM
  • Patent number: 7525131
    Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.
    Type: Grant
    Filed: August 29, 2006
    Date of Patent: April 28, 2009
    Assignees: National University Corporation Shizuoka University, Hamamatsu Photonics K.K.
    Inventors: Masatomo Sumiya, Shunro Fuke, Tokuaki Nihashi, Minoru Hagino
  • Patent number: 7525168
    Abstract: A MOS or CMOS based active pixel sensor designed for operation with zero or close to zero potential across the pixel photodiodes to minimize or eliminate dark current. In preferred embodiments the pixel photodiodes are produced with a continuous pin or nip photodiode layer laid down over pixel electrodes of the sensor. In this preferred embodiment, the voltage potential across the pixel photodiode structures is maintained constant and close to zero, preferably less than 1.0 volts. This preferred embodiment enables the photodiode to be operated at a constant bias condition during the charge detection cycle. Setting this constant bias condition close to zero (near “short circuit” condition) assures that dark current is substantially zero.
    Type: Grant
    Filed: February 22, 2008
    Date of Patent: April 28, 2009
    Assignee: e-Phocus, Inc.
    Inventor: Tzu-Chiang Hsieh
  • Patent number: 7521724
    Abstract: A light emitting diode (LED) package and process of making the same includes a silicon-on-insulator (SOI) substrate that is composed of two silicon based materials and an insulation layer interposed therebetween. The two silicon based materials of silicon-on-insulator substrate are etched to form a reflective cavity and an insulation trench, respectively, for dividing the silicon-on-insulator substrate into contact surfaces of positive and negative electrodes. A plurality of metal lines are then formed to electrically connect the two silicon based materials such that the LED chip can be mounted on the reflective cavity and electrically connected to the corresponding electrodes of the silicon-on-insulator substrate by the metal lines. Thus the properties of heat resistance and heat dispersal can be improved and the process can be simplified.
    Type: Grant
    Filed: June 8, 2005
    Date of Patent: April 21, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Hung Chen, Shih-Yi Wen, Wu-Cheng Kuo, Bing-Ru Chen, Jui-Ping Weng, Hsiao-Wen Lee
  • Patent number: 7492901
    Abstract: A single-photon generator includes an exciton generation part including therein a quantum dot, an excitation part for generating an exciton in the exciton generator part, a recombination control part for controlling recombination timing of the exciton in the exciton generation part, and an optical window provided in the exciton generation part so as to pass a single photon formed as a result of recombination of the exciton, wherein the recombination control part causes, in the exciton generation part, recombination of the excitons at longer intervals than a recombination lifetime of a exciton molecule.
    Type: Grant
    Filed: February 18, 2004
    Date of Patent: February 17, 2009
    Assignee: Fujitsu Limited
    Inventors: Kazuya Takemoto, Tatsuya Usuki, Motomu Takatsu
  • Patent number: 7492988
    Abstract: Planar AWG circuits and systems are disclosed that use air trench bends to increase planar circuit compactness.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: February 17, 2009
    Inventors: Gregory P. Nordin, Yongbin Lin, Seunghyun Kim
  • Publication number: 20080315198
    Abstract: An image sensor and a manufacturing method thereof are provided. The sensor includes a substrate, a bottom electrode, an intrinsic layer and a first conductive layer formed over the substrate, a diffusion barrier film formed over the first conductive layer, and an upper transparent electrode formed over the diffusion barrier film. Therefore, a vertical integration of a transistor circuitry and a photodiode can be provided. Further, the leakage current is prevented and the photosensitivity is increased by performing the plasma treatment on the first conductive layer. Due to the vertically integrated transistor circuitry and photodiode, the fill factor can approach 100%, and higher sensitivity compared with the related art having the same pixel size can be provided. The sensitivity of each unit pixel is not reduced, even though more complex circuitry is realized on the image sensor.
    Type: Application
    Filed: December 31, 2007
    Publication date: December 25, 2008
    Inventor: Oh Jin Jung
  • Publication number: 20080303022
    Abstract: A highly sensitive optical sensor element, and a switch element such as a sensor driver circuit are formed on the same insulating substrate by using an LTPS planar process to provide a low cost area sensor (optical sensor device) incorporating the sensor driver circuit and the like or an image display device incorporating the optical sensor element. As an optical sensor element structure, one electrode of the sensor element is manufactured with the same film of the polycrystalline silicon film that is an active layer of the switch element constituting a circuit. A photoelectric conversion unit for performing photoelectric conversion is made of an amorphous silicon or a polycrystalline silicon film of an intrinsic layer. A structure in which the amorphous silicon of the photoelectric conversion unit and the insulating layer are sandwiched between two electrodes of the sensor element is adopted.
    Type: Application
    Filed: February 25, 2008
    Publication date: December 11, 2008
    Inventors: Mitsuharu Tai, Masayoshi Kinoshita
  • Publication number: 20080296573
    Abstract: A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light discharge surface through which light emitted from the first layer is externally discharged, the light discharge surface being located on the side of the substrate; and an electrode having a plurality of regions that are of a conductive material and are in ohmic-contact with the second layer.
    Type: Application
    Filed: July 11, 2008
    Publication date: December 4, 2008
    Applicant: TOYODA GOSEI CO., LTD.
    Inventors: Yoshinobu Suehiro, Seiji Yamaguchi
  • Publication number: 20080296572
    Abstract: An optical semiconductor device may include a semiconductor component having an optical sensor on a front face thereof, and a transparent plate having electrical connection lines on a rear face thereof and lying outside a free region of the rear face. The front face of the semiconductor component may be attached to the rear face of the transparent plate so that the optical sensor is adjacent the free region. The optical semiconductor device may also include electrical connectors electrically connecting the semiconductor component to the electrical connection lines, a sealing spacer extending only partway between the front face of the semiconductor component and the rear face of the transparent plate at the periphery of the optical sensor, and an encapsulating material for encapsulating the electrical connectors and a periphery of the semiconductor component on the rear face of the transparent plate. The sealing spacer may be structurally distinct from, abutting, and retaining the encapsulating material.
    Type: Application
    Filed: July 2, 2008
    Publication date: December 4, 2008
    Applicant: STMicroelectronics SA
    Inventor: Patrick Daniel PERILLAT
  • Patent number: 7449718
    Abstract: The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.
    Type: Grant
    Filed: January 2, 2004
    Date of Patent: November 11, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Toru Takayama, Yuugo Goto
  • Patent number: 7429750
    Abstract: A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light discharge surface through which light emitted from the first layer is externally discharged, the light discharge surface being located on the side of the substrate; and an electrode having a plurality of regions that are of a conductive material and are in ohmic-contact with the second layer.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: September 30, 2008
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Yoshinobu Suehiro, Seiji Yamaguchi
  • Publication number: 20080230782
    Abstract: A device for generating a plurality of electron-hole pairs from a photon is disclosed. The device includes a substrate, a first electrode formed above the substrate, and a first doped Group IV nanoparticle thin film deposited on the first electrode. The device further includes an intrinsic layer deposited on the first doped Group IV nanoparticle thin film, wherein the intrinsic layer includes a matrix material with a melting temperature T1, wherein T1 is greater than about 300° C., and a set of quantum confined nanoparticles each with a melting temperature T2, wherein T2 is less than about 900° C., wherein the melting temperature T1 is less than the melting temperature T2.
    Type: Application
    Filed: September 19, 2007
    Publication date: September 25, 2008
    Inventors: Homer Antoniadis, Pingrong Yu
  • Publication number: 20080224137
    Abstract: An image sensor and a method of manufacturing the same are provided. A metal wiring layer is formed on a semiconductor substrate including a circuit region, and first conductive layers are formed on the metal layer separated by a pixel isolation layer. An intrinsic layer is formed on the first conductive layers, and a second conductive layer is formed on the intrinsic layer.
    Type: Application
    Filed: August 21, 2007
    Publication date: September 18, 2008
    Inventor: JIN HA PARK
  • Publication number: 20080224138
    Abstract: Disclosed is an image sensor, which includes a substrate having a transistor circuit and lower interconnections. First interconnections are formed separated from each other on the substrate and electrically connected to the CMOS circuitry through the lower interconnections. Planarized insulating layers are formed between the first interconnections to isolate unit pixels. An intrinsic layer is formed on the substrate including the insulating layers, and a second conductive layer is formed on the intrinsic layer. The first interconnections, the intrinsic layer and the second conductive layer provide a photodiode structure for the image sensor.
    Type: Application
    Filed: August 21, 2007
    Publication date: September 18, 2008
    Inventor: MIN HYUNG LEE
  • Publication number: 20080224136
    Abstract: An image sensor contains a semiconductor substrate, a plurality of pixels defined on the semiconductor substrate, a photo conductive layer and a transparent conductive layer formed on the pixel electrodes of the pixels in order, and a shield device positioned between any two adjacent pixel electrodes. The shield device has a shield electrode and an isolation structure surrounding the shield electrode so that the shield electrode is isolated from the pixel electrodes and the photo conductive layer by the isolation structure.
    Type: Application
    Filed: March 15, 2007
    Publication date: September 18, 2008
    Inventors: Hsin-Heng Wang, Chiu-Tsung Huang, Shih-Siang Lin
  • Patent number: 7420207
    Abstract: A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: September 2, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Jin Kim, Kwang-Joon Yoon, Phil-Jae Chang, Kye-Won Maeng, Young-Jun Park
  • Publication number: 20080173347
    Abstract: One exemplary embodiment is a semiconductor structure, that can include a semiconductor substrate of one conductivity type, having a front surface and a back surface, a first semiconductor layer disposed on the front surface of the semiconductor substrate, a second semiconductor layer disposed on a portion of the back surface of the semiconductor substrate, and a third semiconductor layer disposed on another portion of the back surface of the semiconductor substrate. Each of the second and third semiconductor layers may be compositionally graded through its depth, from substantially intrinsic at an interface with the substrate, to substantially conductive at an opposite side, and have a selected conductivity type obtained by the incorporation of one or more selected dopants.
    Type: Application
    Filed: January 23, 2007
    Publication date: July 24, 2008
    Applicant: General Electric Company
    Inventors: Bastiaan Arie Korevaar, James Neil Johnson
  • Patent number: 7397067
    Abstract: Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to thermal expansion characteristics of the protective cover. According to some embodiments, at least one set of imaging elements is fabricated on an upper surface of a semiconductor substrate, and a base is affixed to a lower surface of the semiconductor substrate to generate substantially negligible mechanical stress between the semiconductor substrate and the base.
    Type: Grant
    Filed: December 31, 2003
    Date of Patent: July 8, 2008
    Assignee: Intel Corporation
    Inventors: Michael O'Connor, Thomas W. Springett, Paul C. Ward-Dolkas
  • Patent number: 7397066
    Abstract: Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/or concave portion at one side of the substrate, and integrated circuitry in the substrate operatively coupled to the image sensor. The imager die can further include external contacts electrically coupled to the integrated circuitry and a cover over the curved image sensor.
    Type: Grant
    Filed: August 19, 2004
    Date of Patent: July 8, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Steven D. Oliver
  • Patent number: 7387952
    Abstract: A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).
    Type: Grant
    Filed: December 2, 2005
    Date of Patent: June 17, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shigeru Nishimura, Seiichi Tamura, Hiroshi Yuzurihara