Abstract: Provided are an array substrate mother board, an array substrate, a display panel and a display device. The array substrate mother board includes array substrates, the array substrate includes a component disposing area; the array substrate includes a base substrate and a drive circuit layer, the drive circuit layer includes a first metal layer, and the first metal layer includes capacitor plates arranged in an array along the first direction and along the second direction; the plurality of array substrates include first-type array substrates, and the plurality of first-type array substrates are arranged along the first direction and are adjacent to a boundary extending along a first direction in the mother board of the array substrate.

Abstract: Embodiments of the present application provide an array substrate and a display device. The array substrate includes a plurality of sub-pixel units arranged in an array, each sub-pixel unit includes a base substrate, a thin film transistor, a pixel electrode and a common electrode, the common electrode is on a side of the base substrate, the thin film transistor and the pixel electrode are between the base substrate and the common electrode, the thin film transistor includes a control terminal, a first electrode and a second electrode, the pixel electrode is connected to the second electrode, and the control terminal is in a continuous sheet shape, an orthographic projection of a boundary of the control terminal on the base substrate is within an orthographic projection of the common electrode on the base substrate.

Abstract: A display device having a plurality of pixel structures, each of the plurality of the pixel structures including: a substrate; a first active pattern on the substrate; a first gate line on the first active pattern and extending in a first direction; a first connecting pattern on the first gate line and configured to transmit an initialization voltage; a second connecting pattern on the first connecting pattern and electrically connected to the first active pattern and the first connecting pattern; and a first electrode on the second connecting pattern and configured to be initialized in response to the initialization voltage.

Abstract: A novel input device that is highly convenient or reliable is provided. A novel input/output device that is highly convenient or reliable is provided. A semiconductor device is provided. The present inventors have reached an idea of a structure including a plurality of conductive films configured to be capacitively coupled to an approaching object, a driver circuit that selects a conductive film from a plurality of conductive films in a predetermined order, and a sensor circuit having a function of supplying a search signal and a sensing signal.

Abstract: Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer.

Abstract: A flexible display apparatus includes a flexible display panel including a flexible substrate, a display area of the flexible substrate including a thin film transistor, an organic light emitting layer and a sensor electrode, and a peripheral area of the flexible substrate including a first alignment mark in which respective portions of two metal layers are stacked; a window on a first surface of the flexible display panel; and a protective film on a second surface of the flexible display panel. The first alignment mark is aligned with a reference point of the window and with a reference point of the protective film.

Abstract: [Object] To provide a display apparatus that can achieve enhancement in display performance of a screen and higher definition. [Solution] There is provided a display apparatus. The drive circuit includes a drive transistor configured to control the light emitting unit, a video signal writing transistor configured to control writing of a video signal, and a capacitative element. In the drive transistor, one source/drain region is connected to a current supply line, another source/drain region is connected to the light emitting unit and a first node of the capacitative element, and a gate electrode is connected to a second node of the capacitative element. In the video signal writing transistor, one source/drain region is connected to a data line, another source/drain region is connected to the gate electrode of the drive transistor and the second node of the capacitative element, and a gate electrode is connected to a scanning line.

Abstract: A thin-film transistor array includes an insulating substrate and pixels each including a thin-film transistor, a pixel electrode, and a capacitor electrode, the pixels being formed in a matrix and located at positions where column wirings extending in a column direction intersect row wirings perpendicular to the column wirings and extending in a row direction. The thin-film transistor includes a gate electrode, a source electrode, a drain electrode, and a semiconductor pattern formed between the source electrode and the drain electrode. The pixel electrode includes two electrically conductive layers which are a lower layer electrode serving as a lower pixel electrode, and an upper layer electrode serving as an upper pixel electrode. The corresponding one of the column wirings is at a position which has no overlap with the capacitor electrode and the lower pixel electrode, and has an overlap with the upper pixel electrode, in the lamination direction.

Abstract: Disclosed is an array substrate. The array substrate includes a substrate and a pixel unit array. A first side of each row of pixel units is provided with a first scanning line corresponding to the row of pixel units, and the first scanning line is connected to switch elements of first-type pixel units in the row of pixel units; and the second side of each row of pixel units is provided with a second scanning line corresponding to the row of pixel units, and the second scanning line is connected to switch elements of second-type pixel units in the row of pixel units. An active layer structure of the switch element of a second-type pixel unit in an ith row of pixel units has a common region with an active layer structure of the switch element of a first-type pixel unit in an (i+1)th row of pixel units.

Abstract: An organic light-emitting device includes a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode. The organic layer includes an emission layer. The emission layer includes a first compound, a second compound, and a third compound. The first compound is represented by Formula 1, the second compound is represented by Formula 2, the third compound is represented by Formula 3, and the first compound and the second compound are different from each other.

Abstract: Embodiments of the present invention relate to a display device in which, in a structure in which an oxide semiconductor thin film transistor is disposed on an upper layer of a low temperature polycrystalline silicon thin film transistor, the hydrogen adsorption layer is disposed on the capacitor electrode located on the driving transistor among low temperature polycrystalline silicon thin film transistors, so that it is possible to prevent the reduction of an S factor due to the re-hydrogenation of the driving transistor in the heat treatment process of the oxide semiconductor thin film transistor.

Abstract: A transparent display device may optimize arrangement areas of a plurality of signal lines and circuit areas, and may prevent a luminance difference from occurring between subpixels for emitting light of the same color. The transparent display device comprises a substrate provided with transmissive areas, a first non-transmissive area provided between the transmissive areas in a first direction, and a second non-transmissive area provided between the transmissive areas in a second direction, first signal lines provided along the first non-transmissive area in the first non-transmissive area and extended from an overlapping area, in which the first non-transmissive area and the second non-transmissive area cross each other, in a direction crossing the first direction, and second signal lines provided along the second non-transmissive area in the second non-transmissive area and extended from the overlapping area in a direction crossing the second direction.

Abstract: A display device includes: a substrate; a polycrystalline semiconductor layer which includes a first electrode, a channel, and a second electrode of a driving transistor disposed on the substrate; a first gate insulating layer disposed on the polycrystalline semiconductor layer; a gate electrode of the driving transistor which is disposed on the first gate insulating layer and overlaps the channel; a lower first scan line disposed on the first gate insulating layer; a second gate insulating layer disposed on the gate electrode and on the lower first scan line; a first lower boost electrode disposed on the second gate insulating layer; a first interlayer-insulating layer disposed on the first lower boost electrode; an oxide semiconductor layer disposed on the first interlayer-insulating layer and including a first upper boost electrode overlapping the first lower boost electrode; and a first connection electrode connecting the gate electrode and the first upper boost electrode.

Abstract: A flexible display apparatus includes a flexible display panel including a flexible substrate, a display area of the flexible substrate including a thin film transistor, an organic light emitting layer and a sensor electrode, and a peripheral area of the flexible substrate including a first alignment mark in which respective portions of two metal layers are stacked; a window on a first surface of the flexible display panel; and a protective film on a second surface of the flexible display panel. The first alignment mark is aligned with a reference point of the window and with a reference point of the protective film.

Abstract: A display apparatus includes a substrate; a lower conductive layer including a protective pattern and an auxiliary conductive pattern on the substrate; a buffer layer on the lower conductive layer; an active pattern on the buffer layer and overlapping the protective pattern; a first insulation layer on the active pattern; and a first conductive layer on the first insulation layer, the first conductive layer including a gate electrode overlapping the active pattern and a load matching line overlapping the auxiliary conductive pattern.

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

Abstract: To provide a light-emitting device in which variation in luminance among pixels caused by variation in threshold voltage of transistors can be suppressed. The light-emitting device includes a transistor including a first gate and a second gate overlapping with each other with a semiconductor film therebetween, a first capacitor maintaining a potential difference between one of a source and a drain of the transistor and the first gate, a second capacitor maintaining a potential difference between one of the source and the drain of the transistor and the second gate, a switch controlling conduction between the second gate of the transistor and a wiring, and a light-emitting element to which drain current of the transistor is supplied.

Abstract: The disclosure provides a capacitor and an electronic device. The capacitor is disposed on a substrate with a protrusion. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode has a first voltage. The second electrode has a second voltage different from the first voltage. The second electrode is closer to the substrate than the first electrode. The insulating layer is disposed between the first electrode and the second electrode. The protrusion penetrates the second electrode and extends into the insulating layer. The electronic device includes the capacitor. The capacitor and the electronic device of the embodiments in the disclosure have a better yield.

Abstract: A display panel and a display device are provided. A display area of the display panel includes an optical component area and a regular display area, and the optical component area and the regular display area both include light-emitting devices, so that the area of the display area becomes larger to meet the trend of full screen display. In the optical component area, a transparent conductive layer includes paired first and second etching slots, a connection wire arranged between the paired first and second etching slots, and an auxiliary layer arranged outside the paired first and second etching slots.

Abstract: A method for manufacturing a display device includes a pixel circuit formed on a substrate, wherein a manufacturing process of the pixel circuit includes a patterning step of a metal film performed in the following procedures (a) to (e): (a) forming the metal film on the substrate; (b) forming a first resist pattern on the metal film by a photolithographic method; (c) etching the metal film with the first resist pattern to form a first metal pattern; (d) forming by the photolithographic method on the metal film formed in the first metal pattern, a second resist pattern including a pattern shape smaller than a pattern shape of the first resist pattern; and (e) etching the metal film with the second resist pattern to form a second metal pattern.

Abstract: The present invention provides an array substrate and a display panel, the array substrate comprises: a first metal layer comprising a plurality of gate routings and a plurality of common electrode routings, at least one of the plurality of common electrode routings is arranged discontinuously and comprises a plurality of common electrode spacers spaced apart from each other; a second metal layer comprising a plurality of common electrode connecting portions; and a first insulating layer provided with a plurality of first through holes, adjacent two of the plurality of common electrode spacers are electrically connected to a common electrode connecting portion through two of the plurality of first through holes.

Abstract: The present disclosure relates to a method for manufacturing a film for a decoration element, the method including depositing two or more islands on one surface of a film; and forming a pattern portion by dry etching the film using the island as a mask.

Abstract: A light, emitting element includes a flexible plate-like portion having a glass substrate, and an organic functional layer formed on one surface side of the glass substrate. The organic functional layer includes a light emitting layer. When the plate-like portion is curved in a prescribed curving direction, and one surface of the plate-like portion is a concave surface, and the other surface thereof is a convex surface, a surface which is positioned on the concave surface side among both surfaces of the glass substrate is referred to as a first surface. When the plate-like portion is curved in a curving direction, and the one surface of the plate-like portion is a concave surface, and the other surface thereof is a convex surface, a compressive stress is applied to a portion whose distance from the first surface of the glass substrate is less than or equal to L (L>T/2).

Abstract: A display device includes an opening area formed in a display area and a non-display area surrounding the opening area, wherein the display area includes a plurality of pixels and a plurality of lines connected to the plurality of pixels, the non-display area includes a connection member connected to at least one of the plurality of lines of the display area, and the connection member is disposed in a different layer from the connected line and is electrically connected to the line by a via-electrode.

Abstract: The present disclosure illustrates a repair method for an active matrix substrate. The repair method includes steps: performing the broken-line inspection process to inspect whether the broken line exists on the first and second gate lines; if one first gate line is inspected to be broken, performing a source line repair-section forming process to cut off the cut portions of the second source lines disposed at two sides of a pixel electrode corresponding to a broken location of the first gate line, to form source line repair sections overlapping with the broken first gate line and the second gate line; performing a gate line repair-section forming process on the second gate line, adjacent to the broken first gate line, to cut off the cut portions of the second gate line to form a gate line repair section overlapping with the second source lines; and performing a connection process.

Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor.

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

Abstract: A chip is provided. The chip includes a flexible substrate, a plurality of thin-film transistors, a redistribution layer, a first power rail layer, and a second power rail layer. The plurality of thin-film transistors are disposed on the flexible substrate. The redistribution layer is disposed above the plurality of thin-film transistors. The first power rail layer is disposed above the redistribution layer. The first power rail layer provides a first voltage to the plurality of thin-film transistors. The second power rail layer is disposed above the first power rail layer. The second power rail layer provides a second voltage to the plurality of thin-film transistors, wherein the second power rail layer is disposed in a grid shape.

Abstract: Disclosed is a semiconductor device including a gate wiring, an active layer, a gate insulating film, a first wiring, a second wring, and a first semiconductor film. The gate wiring includes a gate electrode. The active layer overlaps with the gate electrode and contains an oxide semiconductor. The gate insulating film is sandwiched by the gate electrode and the active layer. The first wiring and the second wiring are each located over the active layer and respectively include a first terminal and a second terminal which are electrically connected to the active layer. The first semiconductor film is located under and in contact with the first wiring and contains the oxide semiconductor.

Abstract: Provided is a piezoelectric thin film device in which lattice mismatch between a piezoelectric thin film and a lower electrode layer (first electrode layer) is reduced. A piezoelectric thin film device 10 comprises a first electrode layer 6a and a piezoelectric thin film 2 laminated directly on the first electrode layer 6a; the first electrode layer 6a includes an alloy composed of two or more metal elements; the first electrode layer 6a has a body-centered cubic lattice structure; and the piezoelectric thin film 2 has a wurtzite structure.

Abstract: A display unit which can realize reduction in thickness and weight of the display unit by omitting a void between a touch panel and a display panel, and its manufacturing method. Whole faces of the touch panel and the display panel are directly bonded together with an adhesive layer in between. The display panel has a structure wherein a driving substrate in which organic light emitting devices are formed and a sealing substrate are bonded together with an adhesive layer in between.

Abstract: An array substrate is provided, including a base substrate, a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode that are sequentially provided, and further including a first insulating layer, a second insulating layer, a third insulating layer, at least one first via, and at least one second via. Each first via penetrates through the third insulating layer, and in each pixel unit with plural chromatic color resists, each first via is between adjacent two chromatic color resists and filled by one of the adjacent two chromatic color resists. Each second via penetrates through the second insulating layer, the at least one second via is in one-to-one correspondence with the at least one first via, each second via is filled by a chromatic color resist having a same color as that of the chromatic color resist in the corresponding first via.

Abstract: Embodiments of the present disclosure provide a flexible array substrate, a manufacturing method thereof, and a flexible display device, which relate to the field of display technology, and can reduce the difficulty of wiring, decrease the IR drop, and improve the problem that the wiring is prone to breakage when bent. The flexible array substrate includes a substrate, the substrate including a first sub-substrate and a second sub-substrate which are stacked, the second sub-substrate including at least one via hole; a wiring layer disposed between the first sub-substrate and the second sub-substrate; and a pixel array layer disposed on a side of the second sub-substrate facing away from the first sub-substrate; the wiring layer including a wiring, wherein the pixel array layer is electrically connected to the wiring through the at least one via hole.

Abstract: Disclosed are an optical fingerprint sensor, a preparation method thereof and a display device. The optical fingerprint sensor includes: a substrate; and a sensor unit, disposed on the substrate and including a thin film transistor and a photosensor electrically connected to the thin film transistor, where the thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, and a light shield layer formed over a channel region between the source electrode and the drain electrode and shielding the semiconductor layer exposed in the channel region.

Abstract: An array substrate, its manufacturing method, and a display apparatus are provided. The array substrate having a substrate, includes: a monocrystalline silicon substrate employed as the substrate including a central display area, a first peripheral area, and a second peripheral area; substrate circuits integrated with a scan drive circuit in the first peripheral area, a data drive circuit in the second peripheral area, and a plurality of pixel circuits in the central display area; a plurality of scan lines in the central display area and coupled to the scan drive circuit; and a plurality of data lines in the central display area and coupled to the data drive circuit. The scan drive circuit, the data drive circuit, and the plurality of pixel circuits include a plurality of transistors, each of which has an active region inside the monocrystalline silicon layer.

Abstract: A display device includes: a substrate including a display area, and a peripheral area outside the display area, the display area including a first area and a second area; a data line at the display area; a pad area at the peripheral area; a connection line at the first area, and connected to the data line to transmit a data signal supplied from the pad area to the data line; a voltage line on the substrate; and a dummy line at the second area, and connected to the voltage line, the dummy line including a plurality of horizontal dummy patterns and a plurality of vertical dummy patterns that are alternately connected to one another.

Abstract: A wiring line is provided on a TFT layer, in which the wiring line is formed in the same layer and formed of the same material as those of a reflection electrode. The reflection electrode includes a plurality of metallic conductive layers made up of a low resistance metallic material, an oxide-based lower transparent conductive layer provided on a lower surface side of a lowermost metallic conductive layer constituting a lowermost layer, an oxide-based upper transparent conductive layer having light reflectivity and provided on an upper surface side of an uppermost metallic conductive layer constituting an uppermost layer, and an oxide-based intermediate transparent conductive layer provided between the plurality of metallic conductive layers.

Abstract: A display device includes a substrate and pixels. The substrate includes: a display area including pixel areas, each including a first area and a second area; and a non-display area enclosing at least one side of the display area. The pixels are disposed on the pixel areas, each pixel including light emitting elements. Each pixel further includes: a pixel circuit part disposed on the first area and including at least one transistor and at least one capacitor; and a display element part disposed on the second area and including an emission area to emit light. Each of the pixel circuit part and the display element part has a multi-layer structure including one or more conductive layers and one or more insulating layers. At least one layer of the pixel circuit part and at least one layer of the display element part are disposed in a same layer.

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions.

Abstract: A display device includes a substrate; at least one data line disposed on the substrate; a first pattern disposed on the substrate and spaced apart from the data line; a first insulating layer at least partially disposed on the data line and the first pattern; an active layer disposed on the first insulating layer and at least partially overlapping with the first pattern; a first gate insulating layer disposed on the active layer; and a first electrode disposed on the first gate insulating layer and overlapping with the active layer, wherein the first electrode does not overlap with the data line in a direction parallel to an upper surface of the first insulating layer.

Abstract: A display device including a display area and a non-display area disposed outside the display area, the display device including a first display substrate, a second display substrate opposite to the first display substrate, and a sealing member disposed between the first display substrate and the second display substrate in the non-display area and coupling the first display substrate to the second display substrate, in which the first display substrate includes a first substrate and an organic layer disposed on the first substrate, the organic layer includes a plurality of dam patterns disposed in the non-display area, and the dam patterns include a first dam pattern not overlapping the sealing member and having a first trench formed on a surface of the first dam pattern, and a second dam pattern overlapping the sealing member.

Abstract: A display device includes a substrate including a display area, a non-display area and a conductive material, a display layer on a top surface of the substrate and including a light-emitting element, a signal line extending from the display layer and into the non-display area, a conductive adhesive member on a bottom surface of the substrate, and a circuit board which is electrically connected to the signal line by contact of the circuit board with the conductive adhesive member, together with contact of the conductive material in the substrate with both the signal line and the conductive adhesive member.

Abstract: A method for depositing a silicon nitride film is provided. A silicon nitride film is deposited in a depression formed in a surface of a substrate from a bottom surface and a lateral surface by ALD toward a center of the depression in a lateral direction so as to narrow a space at the center of the depression. First nitrogen radicals are adsorbed into the depression immediately before a stage of filling the space at the center with the silicon nitride film deposited toward the center of the depression. A silicon-containing gas is adsorbed on the first nitrogen radical in the depression by physical adsorption. Second nitrogen radicals are supplied into the depression so as to release the silicon-containing gas from the first nitrogen radical and to cause the released silicon-containing gas to react with the second nitrogen radical, thereby depositing a silicon nitride film to fill the central space.

Abstract: The present disclosure provides a display panel and a display device. The display panel includes a display area, including a first display area. The first display area includes light non-transmissive areas and light transmissive areas, and sub-pixels in the light non-transmissive areas include a first light-shielding layer, a pixel driving circuit, and a light-emitting structure layer. In a direction perpendicular to a substrate, a projection of the first light-shielding layer covers a projection of the light-emitting structure layer and a projection of at least one transistor of the pixel driving circuit.

Abstract: The present application relates to the field of display technology and, in particular, to an array substrate, a manufacturing method of the array substrate, and a display device. An array substrate comprises: a base substrate having a pixel display area and a gate drive circuit area; a first thin film transistor formed in the pixel display area, the first thin film transistor comprising a first gate insulating layer; a second thin film transistor formed in the gate drive circuit area, the second thin film transistor comprising a second gate insulating layer, where a thickness of the second gate insulating layer is smaller than a thickness of the first gate insulating layer.

Abstract: A display panel including sub-pixels, first and second scan lines, first and second data lines, and first to fourth auxiliary lines is provided. The sub-pixels are arranged into first rows arranged in a first direction and second rows arranged in a second direction. Each third auxiliary line is electrically connected to a second auxiliary line and a first auxiliary line electrically connected to a first scan line. Each fourth auxiliary line is electrically connected to a second scan line and a first scan line. There are at least 2n second rows between each third auxiliary line and the first scan line electrically connected thereto, there are at least 2n+1 second rows between each third auxiliary line and the second scan line electrically connected thereto, and n is a positive integer.

Abstract: A display device includes a display panel having a display area and a non-display area. A window is disposed on the display panel. A bezel portion is disposed on the window. The bezel portion at least partially overlaps the non-display area. An adhesive layer is disposed between the display panel and the window. An interlayer is disposed between the bezel portion and the adhesive layer. The interlayer has at least one ultrasound transmitting area overlapping the bezel portion.

Abstract: A display apparatus includes a thin film transistor facing a substrate with a buffer layer therebetween and including a semiconductor layer, a channel region, a source region, a drain region, and a gate electrode; a conductive pattern between the substrate and the semiconductor layer and connected to the semiconductor layer, the conductive pattern facing the semiconductor layer with the buffer layer therebetween; a contact hole in the buffer layer and exposing the conductive pattern to outside the buffer layer; and a display element which is electrically connected to the thin film transistor. The source region or the drain region extends through the contact hole in the buffer layer, to contact the conductive pattern and connect the semiconductor layer to the conductive pattern.

Abstract: A touch substrate, a driving method of a touch substrate, a preparation method of a touch substrate, and a touch device are disclosed. The touch substrate includes an underlying substrate and a touch layer, and the touch layer is on the underlying substrate. The touch layer includes a plurality of touch electrodes which are electrically separated from each other, each of the touch electrodes overlaps with an edge area of the touch substrate in a direction perpendicular to the underlying substrate, and each of the touch electrodes is electrically connected with a touch signal line on the underlying substrate in the edge area. The touch substrate can improve the pixel aperture ratio of the display area, so that the touch device including the touch substrate can achieve better display effect.

Abstract: A display backplane includes a substrate, a thin film transistor over the substrate, and a pixel capacitor assembly over a side of the thin film transistor away from the substrate, and an orthographic projection of the pixel capacitor assembly on the substrate covers at least one portion of an orthographic projection of the thin film transistor on the substrate. The pixel capacitor assembly includes a first electrode, a passivation layer, and a second electrode, sequentially over a side of the thin film transistor away from the substrate, and an orthographic projection of the first electrode on the substrate is overlapped with the orthographic projection of the thin film transistor on the substrate. A display panel including the display backplane can further include an OLED component, arranged over a side of the pixel capacitor assembly away from the substrate.