Abstract: An electronic component and method for its assembly is disclosed. In one embodiment, the electronic component comprises at least two semiconductor components and a circuit carrier comprising a die pad and a rewiring structure. At least one semiconductor component is a vertical semiconductor power switch having an upper surface comprising at least one electrode and a lower surface comprising at least one electrode. The lower side of the at least two semiconductor components is attached to the die pad by a diffusion solder bond.

Abstract: A semiconductor device having a plastic package with a linear array of metal lands (202, 212) with parallel perimeter portions (203a, 213a). Pairs of adjacent lands have their facing parallel perimeter portions oriented in parallel, defining a centerline. The land perimeters have flanges remote from the surface, each flange shaped by an outline. For adjacent lands, the flanges (207b, 218, 219) of the parallel perimeter portions have asymmetrical outlines relative to the centerline and are in concord so that alternately the flange of one land diminishes its outline where the flange of the adjacent land protrudes its outline. This coordinated variation shapes the space between the adjacent flanges in a meander-like mode. Adhesive plastic material is anchored in the space to hinder a land shift along the parallel perimeter portions.

Abstract: A power semiconductor module having surface-mountable flat external contact areas and a method for producing the same is disclosed. In one embodiment, the top sides of the external contacts form an inner housing plane, on which at least one power semiconductor chip is fixed by its rear side on a drain external contact. An insulation layer covers the top side over the edge sides of the semiconductor chip as far as the inner housing plane whilst leaving free the source and gate contact areas on the top side of the semiconductor chip and also whilst partly leaving free the top sides of the corresponding external contacts. Arranged on the insulation layer is a connecting conductive layer between the source contact areas on the top side of the semiconductor chip and the top sides of the source external contacts, and also a gate connecting layer from the gate contact areas to the top side of the gate external contact.

Abstract: An integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and a method of making an electronic assembly.

Abstract: A metal backing tab supports the semiconductor device and has an extending portion extending from an edge. A top leg, a middle leg and a bottom leg are all coupled to the semiconductor device and each has a lead terminal portion extending beyond the boundary of said molded housing. The top leg has a first top leg section that protrudes directly away from the molded housing, a second top leg section that bends toward a direction of a face of the molded housing, and a third top leg section bending downward. The middle leg has a first middle leg section connected to the package that protrudes away from the molded housing, and a middle leg downward section that points downward. The bottom leg has a first bottom leg section that protrudes away from the molded housing face, a second bottom leg section that points away from the molded housing face, and third bottom leg section that points downward.

Abstract: A lead frame structure is provided, which includes a die pad having a first mounting portion and a second mounting portion separated from the first mounting portion by a gap. The first and second mounting portions are formed with corresponding blocking surfaces bordering the gap, so as to allow a flow rate of an encapsulating resin flowing through the gap during a molding process to be reduced by the blocking surfaces, such that different portions of the encapsulating resin respectively flowing above, in and below the die pad can have substantially the same flow rate, thereby preventing bonding wires from being deformed to cause short circuit and avoiding formation of voids. A semiconductor package with the lead frame structure is also provided.

Abstract: A semiconductor chip assembly includes a semiconductor chip that includes a conductive pad, a conductive trace that includes a routing line and a filler, a connection joint that electrically connects the routing line and the pad, an encapsulant and an insulative base. The routing line contacts the filler and extends laterally beyond the filler, and the filler contacts the insulative base in an aperture that extends through the insulative base.

Abstract: The present invention provides a system and method for selectively stacking and interconnecting leaded packaged integrated circuit devices with connections between the feet of leads of an upper IC and the upper shoulder of leads of a lower IC while conductive transits that implement stacking-related intra-stack connections between the constituent ICs are implemented in multi-layer interposers or carrier structures oriented along the leaded sides of the stack, with selected ones of the conductive transits electrically interconnected with other selected ones of the conductive transits.

Abstract: The present invention is directed to a new bonding pad structure having a rugged contact interface that makes it more difficult for a crack to grow from the peripheral edge of the bonding pad. The rugged contact interface also helps to accumulate more solder paste on the edge of the bonding pad, increase the thickness of the solder layer near the pad edge and prevent the pad edge from being oxidized and turning into a crack initiation point.

Abstract: A chip package structure including a chip, a lead frame, first bonding wires and second bonding wires is provided. The chip has an active surface, first bonding pads and second bonding pads, wherein the first bonding pads and the second bonding pads are disposed on the active surface. The chip is fixed below the lead frame, and the lead frame includes inner leads and bus bars. The inner leads and the bus bars are disposed above the active surface of the chip, and the bus bars are located between the inner leads and the corresponding first bonding pads. The first bonding wires respectively connect the first bonding pads and the bus bars. The second bonding wires respectively connect the bus bars and a part of the inner leads. The third bonding wires respectively connect the second bonding pads and the other of the inner leads.

Abstract: A circuit board including a flexible insulating substrate, a plurality of conductive wirings placed in line on the flexible insulating substrate, and bumps provided at end portions of the respective conductive wirings positioned in a region for mounting a semiconductor chip is provided. The circuit board further includes an auxiliary conductive wiring positioned at an outermost corner of the region for mounting the semiconductor chip, being adjacent to and an outside the outermost conductive wiring, and an auxiliary bump formed on the auxiliary conductive wiring in line with the bumps on the conductive wirings.

Abstract: A semiconductor chip assembly includes a semiconductor chip that includes a conductive pad, a conductive trace that includes a routing line, a bumped terminal and a filler, a connection joint that electrically connects the routing line and the pad, and an encapsulant. The routing line contacts the bumped terminal and the filler and extends laterally beyond the bumped terminal and the filler, and the filler contacts the bumped terminal in a cavity that extends through the bumped terminal.

Abstract: This invention provides a high frequency power module which is incorporated into a mobile phone and which incorporates high frequency portion analogue signal processing ICs including low noise amplifiers which amplify an extremely weak signal therein. A semiconductor device includes a sealing body which is made of insulation resin, a plurality of leads which are provided inside and outside the sealing body, a tab which is provided inside the sealing body and has a semiconductor element fixing region and a wire connection region on a main surface thereof, a semiconductor element which is fixed to the semiconductor element fixing region and includes electrode terminals on an exposed main surface, conductive wires which connect electrode terminals of the semiconductor element and the leads, and conductive wires which connect electrode terminals of the semiconductor element and the wire connecting region of the tab.

Abstract: The present disclosure suggests various microelectronic component assembly designs and methods for manufacturing microelectronic component assemblies. In one particular implementation, a microelectronic component assembly includes a microelectronic component, at least two leads, and at least two bond wires. Each of the leads may have a reduced-thickness inner length adjacent terminals of the microelectronic component and a body having an outer surface spaced farther from the microelectronic component than a bond surface of the inner length. Each of the bond wires couples the microelectronic component to one of the leads and has a maximum height outwardly from the microelectronic component that is no greater than the height of the outer surface of the lead.

Abstract: An integrated circuit package system including an integrated circuit die, a leadframe and an integrated circuit support. The integrated circuit support between the integrated circuit die and the leadframe with the electrical interconnects connected to the leadframe.

Abstract: This invention is directed to preventing deformation, breakage, and the like of leads in a semiconductor device, reducing the fraction of defects, and making the semiconductor device smaller and thinner. In order to accomplish these objects, in a carrier including a base having a device hole and a plurality of leads for bonding a chip, the leads are provided with thin heat-resistant films.

Abstract: A device comprising a semiconductor chip (110) having a side edge (111) and a plurality of metal bond pads (120, 121) near the edge; the pads are aligned to form rows (130, 131) parallel to the edge. The device further includes a leadframe (100) having leads (140 . . . ) oriented with one end (140a . . . ) towards the chip edge and spaced from it by a gap (150); the chip is attached to the leadframe. Ends of selected leads are connected by a metal cross bar (160) parallel to the chip edge. Substantially parallel bond wires (170) are crossing the gap to connect each chip pad either to the crossbar or to a non-selected lead end. In a preferred lead arrangement, the selected leads alternate with non-selected leads.

Abstract: Packages for an optical integrated circuit die and a method for making such packages are disclosed. The package includes a die, a die pad, a plurality of lead fingers, and an encapsulating dielectric material. The downward second pad surface of the die pad bearing an integrated circuit is encapsulated by a bottom encapsulating dielectric material. The top encapsulating dielectric material provides the function for protecting the leadframe from severe environment. The top encapsulating dielectric material can be neglected if there is no threat on the integrated circuit die and the leadframe. Multiple of lead fingers are mounted on the printed circuit board. A portion of the printed circuit board is removed in order to provide an optical path for the light beam transmitted from a light source through the transparent bottom encapsulating dielectric material into the integrated circuit die. The method of making a package includes forming a leadframe including a die pad and a plurality of lead fingers.

Abstract: Apparatus and methods are provided for integrally packaging antennas with semiconductor IC (integrated circuit) chips to provide highly-integrated and high-performance radio/wireless communications systems for millimeter wave applications including, e.g., voice communication, data communication and radar applications. For example, wireless communication modules are constructed with IC chips having receiver/transmitter/transceiver integrated circuits and planar antennas that are integrally constructed from BEOL (back end of line) metallization structures of the IC chip.

Abstract: A semiconductor chip assembly includes a semiconductor chip that includes a conductive pad, a conductive trace that includes a routing line and a metal pillar, a connection joint that electrically connects the routing line and the pad, and an encapsulant. The metal pillar includes tapered sidewalls with first and second sidewall portions and a spike, and the first and second sidewall portions are concave arcs that are adjacent to one another at the spike.

Abstract: A semiconductor device including: a substrate on which a plurality of leads are formed; and a semiconductor chip mounted on the substrate in such a manner that a surface of the semiconductor chip having a plurality of electrodes faces the substrate. Each of the leads includes a first portion that is bonded to one of the electrodes and a second portion that extends outward from the inner side of a region in the substrate that overlays the semiconductor chip. The second portion is entirely adhered to the substrate and curved.

Abstract: A lead frame may include a plurality of leads, each having a bonding portion electrically connected to a semiconductor chip and an attaching portion. A tape may be provided on the attaching portions of the leads. The attaching portion of each lead may have a width that is smaller than the width of another portion of the lead. A plating layer may be provided on the attaching portion. The lead frame may be implemented in a semiconductor package.

Abstract: The present invention relates to a stress-free lead frame (1) for a semiconductor. The stress-free lead frame (1) is provided with a stress-relief means (15) and an interlocking means (16) at the outer periphery. The stress-relief means (15) is capable of accommodating expansion and compression while the interlocking means (16) take care of shock and vibration during handling to thereby eliminate delamination of the lead frame (10).

Abstract: An integrated circuit package system including an integrated circuit die and a lead frame with a trenched die pad. The integrated circuit die is mounted to the trenched die pad.

Abstract: A semiconductor component includes at least one semiconductor power switch, wherein a gate electrode and at least two source regions are disposed on the upper side of the semiconductor power switch. The component further includes a leadframe including a die pad and a number of leads disposed on one side of the die pad. A number of connectors extends between the source regions and the source leads such that each source lead is electrically connected to each source region.

Abstract: A leadframe comprising a downset formed adjacent to an edge of the leadframe so as to direct the molding compound to flow evenly inside the mold cavity. The downset has an upward slope extending from the edge of the frame and levels off with the rest of the frame at a first transition point. The upward slope facilitates the upward flow of the molding compound entering from a bottom gate. Likewise, the leadframe also directs flow in a top gated mold by reversing the orientation of the leadframe or by forming a reverse downset on the leadframe.

Abstract: A semiconductor package includes a flip chip mounted on a plurality of leads and encapsulated by a molding compound. The upper surfaces of the leads includes a plurality of bump-bonding regions at the fan-in ends of the leads, and the lower surfaces of the leads include a plurality of outer connecting regions at the fan-out ends of the leads. A plurality of indentations are formed at the upper surfaces of the leads and adjacent to the corresponding bump-bonding regions so as to avoid solder contamination on the leads. After molding, the indentations are filled with the molding compound. Preferably, the indentations have a reversed “?”-shaped profile to prevent bumps of the flip chip from excessively wetting over the other portions of the leads to firmly fix the fan-in ends of the leads.

Abstract: The present invention provides microelectronic component assemblies and lead frame structures that may be useful in such assemblies. For example, one such lead frame structure may include a set of leads extending in a first direction and a dam bar. Each of the leads may have an outer length and an outer edge. The dam bar may include a plurality of dam bar elements, with each dam bar element being joined to the outer lengths of two adjacent leads. In this example, each dam bar element has an outer edge that extends farther outwardly than the outer edges of the two adjacent leads. The outer edges of the leads and the outer edges of the dam bar elements together define an irregular outer edge of the dam bar. Other lead frame structures and various microelectronic component assemblies are also shown and described.

Abstract: A leadframe includes a die pad, a plurality of tie bars, a plurality of metal extrusions and a plurality of leads. The leads are arranged around the die pad. The tie bars are connected to the corners of the die pad, and the metal extrusions are connected to the sides of the die pad but separated from the tie bars. Each metal extrusion has a locking hole and a bonding surface, which is higher than the die pad. The metal extrusions are configured for improving ground connections by wire-bonding. When a bottom surface of the die pad is exposed from an encapsulant for a semiconductor package, the metal extrusions help to secure the die pad without stress transmission.

Abstract: A semiconductor apparatus includes a semiconductor pellet having electrodes thereon; a plurality of lead terminals, which electrically connect the electrodes of the semiconductor pellet to terminals formed on a substrate; and a molding member, which is filled around the semiconductor pellet and upper parts of the lead terminals. The plurality of lead terminals are shaped to be elongated strips and are arranged to extend out of the molding member toward the substrate.

Abstract: A semiconductor package that includes two power semiconductor dies, such as power MOSFET dies, including vertical conduction MOSFETs, arranged in a half-bridge configuration is disclosed. The package may be mounted on a split conductive pad including two isolated die pads, each die pad being electrically connected to the second power electrode of the die that is on it. The split pad may include several conductive leads, including at least one output lead electrically connected to a first electrode of the first semiconductor die on the same side of the die as the control electrode and to the second electrode of the second die located on the opposite side of the second die from the control electrode.

Abstract: First alignment marks are provided on a film substrate in a manner that they are located at positions offset from the disposed positions of second alignment marks provided on a semiconductor chip. The amount of expansion or contraction of the film substrate is obtained by measuring the distance between the first alignment marks. Based on the amount of expansion or contraction, the semiconductor chip is shifted with respect to the film substrate and mounted thereon.

Abstract: The present invention relates generally to permanent interconnections between electronic devices, such as integrated circuit packages, chips, wafers and printed circuit boards or substrates, or similar electronic devices. More particularly it relates to high-density electronic devices. The invention describes means and methods that can be used to counteract the undesirable effects of thermal cycling, shock and vibrations and severe environment conditions in general. For leaded devices, the leads are oriented to face the thermal center of the devices and the system they interact with. For leadless devices, the mounting elements are treated or prepared to control the migration of solder along the length of the elements, to ensure that those elements retain their desired flexibility.

Abstract: A leadframe for a surface-mountable radiation-emitting component, preferably a light-emitting diode component, having at least one chip connection region and at least one external connection strip. The leadframe is formed in planar fashion and a deformation element, preferably a spring element, is arranged between the chip connection region and the external connection strip. The deformation element enables an elastic or plastic deformation of the leadframe in the plane of the leadframe. A housing, a surface-mountable component and an arrangement having a plurality of such components are furthermore specified.

Abstract: A leadframe for a semiconductor die includes signal leads, ground leads, and a die support holder for supporting the semiconductor die. The die support holder has opposite surfaces and side edges therebetween. The opposite die support holder surfaces are smaller in transverse extent than the semiconductor die for supporting the die on one of the opposite die support holder surfaces such that the die extends beyond the side edges of the die support holder.

Abstract: A semiconductor chip assembly includes a semiconductor chip that includes a conductive pad, a conductive trace that includes a routing line, a bumped terminal and a metal filler, a connection joint that electrically connects the routing line and the pad, and an encapsulant. The routing line is contiguous with and integral with the bumped terminal and extends laterally beyond the bumped terminal and the metal filler, and the metal filler contacts the bumped terminal in a cavity that extends through the bumped terminal.

Abstract: An inventive leadframe includes an outer frame, a die pad, and a plurality of leads each having land portions and connections. The land portions each have an upper surface serving as a bonding pad to be connected with a metal wiring, and a lowermost part serving as an external terminal. The connections are each devoid of its lower part so as to be thinner than the land portion, and are provided between the outer frame and the land portions, between the land portions associated with each other in each lead, and between the land portions and the die pad. Furthermore, the inventive leadframe is provided with no member that functions as a suspension lead for connecting the outer frame and the die pad to each other during plastic encapsulation.

Abstract: A semiconductor chip assembly includes a semiconductor chip that includes a conductive pad, a conductive trace that includes a routing line, a bumped terminal and a metal pillar, a connection joint that electrically connects the routing line and the pad, and an encapsulant. The routing line is contiguous with the bumped terminal and extends laterally beyond the bumped terminal and the metal pillar, and the metal pillar contacts and extends vertically beyond the bumped terminal.

Abstract: An area array type semiconductor package includes a plurality of conductive media such as solder bumps or solder balls, attached to respective bond pads of a chip. The conductive media act as external output terminals. The chip is attached to a lead frame by a thermal conductive adhesive, and a predetermined area of the lead frame and the semiconductor chip are packaged with a molding resin. Leads of the lead frame are then trimmed and formed so that the lead frame, to which the semiconductor chip is adhered, acts as a heat sink. This allows the package to be used for a high-powered semiconductor device which radiates a high temperature heat. Also, because conductive media such as solder bumps or solder balls can be used to directly connect bond pads of the chip to conductive regions of a circuit board, a size of the semiconductor package can be minimized, the arrangement of the bonding pads on the chip can be easily planned, and electrical characteristics of the semiconductor package can be improved.

Abstract: A semiconductor device (21) can include, e.g., a recessed portion (25) on the reverse surface (224) of an insulating resin (22) which is the mounting surface of the semiconductor device (21). Additionally, on the outer peripheral surface of the recessed portion (25), the exposed region of leads (26) and the reverse surface (224) of the insulating resin (22) form generally the same plane. This allows, e.g., a QFN semiconductor device (21) according to preferred embodiments herein to place dust particles in the recessed portion (25) even in the presence of dust particles such as crushed burr particles of the leads (26) or plastic burrs, thereby avoiding mounting deficiencies when mounting the semiconductor device.

Abstract: A semiconductor chip is mounted on the substrate so that the first group of electrodes faces the first group of leads and the second group of electrodes faces the second group of leads. The first group of leads extends in a direction away from the second group of electrodes. Each of the second group of leads extends so as to pass between the first group of electrodes and is formed to be bent in the region between first and second straight lines.

Abstract: To provide a semiconductor device capable of corresponding to an applied bending stress by flexibly changing its shape, and to provide a semiconductor device module, a manufacturing method of the semiconductor device, and a manufacturing method of the semiconductor device module. In a silicon substrate whose front surface is provided with an element forming layer having an element forming region where a semiconductor element is formed, a groove is formed in a portion of the rear surface of the silicon substrate corresponding to a region of the element forming layer where a semiconductor element is not formed.

Abstract: A low profile semiconductor device package includes a lead frame with terminal leads and two die pads for receiving at least two semiconductor die that are interconnected to form a circuit. A further low profile semiconductor device package includes a lead frame with two die pads for receiving at least two semiconductor die that are interconnected to form a circuit and also has a reduced height through removal of a mounting tab. An example of such device packages is a package that includes first and second MOSFET die, each connected to a respective die pad. The source of one MOSFET is connected to the drain of the other MOSFET, thereby forming a low profile device package that provides a half-bridge circuit. Other example device packages include different arrangements of two interconnected MOSFET die, two interconnected IGBTs, or a combination of a MOSFET die and a diode.

Abstract: A semiconductor die package is disclosed. In one embodiment, the die package includes a semiconductor die including a first surface and a second surface, and a leadframe structure having a die attach region and a plurality of leads extending away from the die attach region. The die attach region includes one or more apertures. A molding material is around at least portions of the die attach region of the leadframe structure and the semiconductor die. The molding material is also within the one or more apertures.

Abstract: A semiconductor device having electrodes formed along a peripheral part thereof in a staggered arrangement of lines including inside-line, central-line and outside-line electrodes. The inside-line electrodes are octagonal or hexagonal shaped with hypotenuses on the central-line electrode and the pellet sides thereof. The central-line electrodes are octagonal or correspondingly hexagonal shaped with hypotenuses on the inside-line and outside-line electrode sides thereof. The maximum width of outside-line electrode wires between the hypotenuses of adjacent inside-line and central-line electrodes depends on the distance between centers of the inside-line and central-line electrodes, minimum lengths of the inside-line and central-line electrodes and electrode protective film, and the necessary minimum conductor interval between the central-line and inside-line electrodes.

Abstract: A semiconductor device (121) is provided which comprises a substrate and a die (123) having a first surface which is attached to the substrate by way of a die attach material. At least a portion (127) of the perimeter of the die is resistant to wetting by the die attach material, either through treatment with a dewetting agent or by selective removal of the backside metallization. It is found that this construction allows the surface area of the die to be increased without increasing the incidence of cracking and chipping along the sawn edges of the die.

Abstract: A lead frame for use in solid state relays has a teardrop shaped frame. The frame has a small rounded portion connected to a large rounded portion. A power semiconductor is mounted in the large rounded portion. The teardrop shape eliminates sharp corners found in rectangular frames and allows heat to dissipate radially in all directions. More metal in close proximity to the power semiconductor, maintaining a lower aspect ratio of length to width, allows the semiconductor to run cooler at any given load. Several vent holes are located in the small rounded portion, which act as exhaust ports for the fumes generated in the heating stage of the solder re-flow, increasing solder coverage and improving reliability. The life of solder junctions utilizing the teardrop shaped lead frame which are subjected to temperature cycling while under load is increased, thus extending the life of the solid state relay.

Abstract: A lead frame (201) for a packaged electronic device having split flag structures (205, 207) coupled by support structures (219). The support structures include bend portions (233) for providing stress relief between the flag structures during the manufacture and/or during the operation of a packaged electronic device (301). In one embodiment, the packaged electronic device includes an inertial sensor (515).

Abstract: A lead-frame-based semiconductor package and a fabrication method thereof are proposed. The semiconductor package includes: a lead frame having a plurality of first and second leads, wherein each first lead is formed with an extending portion smaller in thickness than the first lead in a manner that, an upper surface of the extending portion is flush with an upper surface of the first lead, and a lower surface of the extending portion forms a height difference with respect to a lower surface of the first lead; a chip mounted over the upper surfaces of the extending portions, and electrically connected to the leads by bonding wires; an encapsulant for encapsulating the upper surfaces of leads, upper surfaces of extending portions, chip and bonding wires; and a non-conductive material applied over the lower surfaces of extending portions, wherein the lower surfaces of leads are exposed to outside of the non-conductive material.

Abstract: A method for producing chip scale IC packages includes the step of mounting a lead frame panel on a temporary support fixture in order to provide support and protection during the manufacturing process. An embodiment of the temporary support fixture includes a sheet of sticky tape secured to a rigid frame. The rigid frame maintains tension in the sheet of sticky tape to provide a stable surface to which the lead frame panel can be affixed. Installation of IC chips and encapsulation in protective casings is performed as in conventional IC package manufacturing. If encapsulant material is to be dispensed over the IC chips, an encapsulant dam can be formed around the lead frame panel to contain the flow of encapsulant material. The temporary support fixture can be used in any IC package manufacturing process in which lead frames require supplemental support.