Abstract: Methods and apparatuses for providing leadless leadframes with dummy contact leads are disclosed. A leadframe is described that includes an enclosed frame having two lengthwise portions and two widthwise portions. The leadframe also includes a device area array with dummy contact leads formed on the peripheral edges of the device area array. Furthermore, dummy contact leads are positioned along a tie bar such that they are directly opposite corresponding contact leads. By cutting along the tie bar, dummy contact leads are separated from the device area array.

Abstract: A leadless leadframe with an improved die pad for mold locking includes a die pad and a plurality of leads. The leads are arranged around the die pad. A plurality of indentations, such as side semi-vias, are formed on the sidewall of the die pad for filling a package body of the semiconductor package so as to enhance the horizontal mold locking capability of the die pad.

Abstract: A main lead (2) is a single body comprised of an inner lead (2a) and an outer lead (2b) which are integrally formed, the bonding wires are arranged in parallel and fixed onto the inner lead (2a) by the wire bonding portions (3b), and the outer lead are exposed from the mold resin to the outside for electrical connection, and a plurality of through holes (8) penetrating the main terminal lead are formed in the outer vicinity of the wire bonding portions (3b) within the inner lead (2a), and the through holes are arranged substantially in parallel to the arrangement direction of the wire bonding portions (3b) so as to correspond to the entire wire bonding portions (3b).

Abstract: A semiconductor device assembly having a lead frame and a semiconductor die configured to be attached to each other is disclosed. An adhesive is applied at room temperature through a stencil to the lead frame. The semiconductor die is urged against the adhesive to effect the attachment between the semiconductor device and the lead frame. The adhesive preferably is from about 75 percent to about 95 percent isobutyl acetal diphenol copolymer and from about 25 percent to about 5 percent, respectively, of titanium oxide.

Abstract: A short-prevented lead frame and a method for fabricating a semiconductor package with the lead frame are proposed, wherein each lead of the lead frame is formed with a thickness-reduced portion at a peripheral position of the lead frame, allowing thickness-reduced portions of adjacent leads to be arranged in a stagger manner. This stagger arrangement significantly increases pitches between the neighboring thickness-reduced portions of leads. Therefore, during a singulation process as to cut through the leads, lead bridging and short-circuiting between adjacent leads caused by cut-side burrs can be prevented from occurrence, whereby singulation quality and product yield and reliability are effectively improved.

Abstract: Multi-layer components such as circuit panels are fabricated by connecting conductive features such as traces one two or more superposed substrates using leads extending through an intermediate dielectric layer. The leads can be closely spaced to provide a high density vertical interconnection, and can be selectively connected to provide customization of the structure.

Abstract: A variety of pad arrangements are provided for semiconductor devices for reducing the likelihood of bonding failures, particularly those due to shorts, and/or for reducing the difference in length between bonding wires to decrease signal skew during operation of the semiconductor device and improve signal integrity.

Abstract: A leadframe of a conductive material includes a central region to accommodate a chip and a plurality of connecting fingers extending at least from one side in the direction of the central region, a contact region being provided adjacent to the central region on at least some of the connecting fingers. The course of the connecting fingers is such that a sectional face in an arbitrary imaginary cross-section at right angles to the main face of the leadframe has leadframe material. In such a case, it is attempted to keep cross-sections in a component without leadframe material as small as possible.

Abstract: A packaging assembly for semiconductor devices and a method for making such packaging is described. The invention provides a non-Pb bump design during a new flip-chip method of packaging. The design uses special conductive materials in a stud form, rather than a solder ball containing Pb. This configuration maintains a desirable solder thickness between the die and the leadframe and forms a high standoff by restricting solder wettabilty on the leadframe side. This configuration also absorbs any stress and protects the die from cracking. The invention also provides methods for making such semiconductor packages.

Abstract: A lead pin with an Au—Ge based brazing material including a lead pin made of a copper-containing metal is provided. The lead pin including a joining surface to a substrate, at least the joining surface of the lead pin being plated with nickel and gold, and including an Au—Ge based brazing material being fused on top of the gold plating, wherein the lead pin after plated with nickel is subjected to heat-treatment and then plated with gold to fuse the brazing material.

Abstract: A first microelectronic element is provided with leads having anchor ends connected to contacts and tip ends moveable with respect to the first microelectronic element. The leads can be provided on a carrier sheet that is assembled to the first microelectronic element, or may be formed in situ on the surface of the first element. The leads may be unitary strips of a conductive material, and the anchor ends of the leads may be bonded to the contacts of the first microelectronic element by processes such as thermosonic or ultrasonic bonding. Alternatively, stub leads may be provided on a separate carrier sheet or formed in situ on the front surface of the first microelectronic element, and these stub leads may be connected by wire bonds to the contacts of the first microelectronic element so as to form composite leads. The tip ends of the leads are joined to a second microelectronic element that is moved away from the first microelectronic element so as to deform the leads.

Abstract: An electronic module has a semiconductor arranged on a substrate. The semiconductor has an electrically conductive contact face on a side remote from the substrate. A contacting unit is configured to be at least partially elastically yielding. A support element is configured to press the contacting unit toward the substrate to make electrical contact. The contacting unit contacts the substrate and/or the contact face.

Abstract: A semiconductor device having a seal member of insulative resin, tab suspension leads and leads exposed to the mounting surface of the seal member, a semiconductor element located in the seal member and fixed by an adhesive of the tab surface, and conductive wires for electrically connecting electrodes of the semiconductor element to the leads. At least a lead portion of the leads has an inverted trapezoid-like section configured of a upper surface embedded in the seal member, a lower surface exposed from the seal member, and side surfaces connecting the two side edges of the upper and lower surfaces. Two side edges of the upper surface are formed with machined surfaces, respectively, having one end connected to the upper surface and the other end connected to side surfaces. The machined surfaces are formed by the pressing process in different directions of extension with the upper and side surfaces.

Abstract: An integrated circuit is electrically connected with a plurality of pads. A passivation film covers a part of each of the pads and exposes the other part of each of the pads. Bumps are formed on the pads, respectively. Each of the bumps is a single layer disposed on a part of each of the pads exposed from the passivation film, and on the passivation film.

Abstract: A method of manufacturing a semiconductor device involves mounting a semiconductor chip, formed on top with a main electrode and a subelectrode smaller in area than the main electrode, on a die pad of an external lead frame through a first bonding material, mounting an inner lead frame in which plural inner leads for connecting the main electrode and the subelectrode on the chip to corresponding connecting pads of the external lead frame are joined together by a tie bar on the chip and the external lead frame through a second bonding material, heating the first and second bonding materials simultaneously for electrically connecting and fixing the chip to the die pad and the inner leads to the electrodes on the chip and the connecting pads of the external lead frame, and cutting the tie bar to separate the inner lead frame into the plural inner leads.

Abstract: A film carrier tape and a method of forming a film carrier tape that incorporates a polymeric reinforcement film are provided for decreasing the deformation of and damage to film carrier tapes by forces resulting from contact with sprocket teeth during the semiconductor assembly process. The reinforcement film may include one or more synthetic resins and may increase the useable area of a base film used in forming film carrier tapes.

Abstract: There is disclosed a TAB style BGA type semiconductor device. This semiconductor device comprises a semiconductor chip on which an integrated circuit is formed, and a polyimide tape which has a conductive pattern and which is allowed to adhere to the semiconductor chip. The conductive pattern includes a bonding portion connected to the pad of the semiconductor chip, a pad portion connected to the outside electrode, and an electrically floating island-like portion in addition to a wiring portion for connecting the bonding portion and the pad portion.

Abstract: A semiconductor integrated circuit device, and method of manufacturing the same, having a conventional-type lead frame with the die paddle removed. In particular, the die paddle is replaced with a section of tape that is supported by the ends of the lead fingers. The semiconductor die is attached to the tape so that it may be wire bonded to the lead fingers. The tape contains at least one slot to allow for expansion and/or contraction of the tape due to various temperatures experienced during the manufacturing process so that the tape does not wrinkle or warp to alter the position of the die.

Abstract: A connection component including a flexible substrate having a top surface and a bottom surface, a layer of a compliant, dielectric material overlying the top surface of the substrate, the compliant material layer having a top surface remote from the substrate, an array of flexible, conductive leads having first ends attached to terminals accessible at the bottom surface of the substrate and second ends adjacent the top surface of the compliant layer, wherein each lead comprises a core of a first conductive material surrounded by a layer of a second conductive material, the second conductive material having a greater yield strength than the first conductive material.

Abstract: A semiconductor chip mounting component includes a support structure adapted to engage a semiconductor chip. The support structure has a top surface, a bottom surface, and a gap extending through the support structure for defining first and second portions of the support structure on opposite sides of the gap. The support structure includes at least one elongated bus disposed alongside the gap, on the second portion of the support structure. The support structure includes a plurality of electrically conductive leads, each lead having a connection section extending across the gap, the connection section having a first end disposed on the first portion of the support structure, and a second end secured to the bus. Each lead includes a frangible section disposed between the first and second ends of the connection section, the frangible section having a cross-sectional area that is smaller than a cross-sectional area of the connection section. The gap is open at the bottom surface of the support structure.

Abstract: A lead frame used for the production of a semiconductor package, wherein each of terminals of the lead frame to be wire-bonded to electrodes provided on the top surface of the semiconductor device has one or two groove(s) for limiting a plating area of noble metal. Since grooves are provided in each terminal, the accuracy of the plating area can be easily checked visually. Further, the grooves absorb stress applied to the terminal when the molded semiconductor packages are individually separated from each other by punching or dicing, and the situation where molding compound comes off of the terminal is prevented. In addition, since the grooves absorb vibrational stress applied to the terminal after mounting a semiconductor on the printed circuit board, the reliability of assembly is improved.

Abstract: A chip device including a leadframe that includes source and gate connections, a bumped die including solder bumps on a top side that is attached to the leadframe such that the solder bumps contact the source and gate connections, and a copper clip attached to the backside of the bumped die such that the copper clip contacts drain regions of the bumped die and a lead rail. The chip device is manufactured by flip chipping a bumped die onto the leadframe and placing the copper clip on a backside of; the trench die such that the backside of the trench die is coupled to the lead rail. The process involves reflowing the solder bumps on the bumped die and solder paste that is placed between the copper clip and the backside of the bumped die.

Abstract: A semiconductor die package is disclosed. In one embodiment, the die package includes a semiconductor die including a first surface and a second surface, and a leadframe structure having a die attach region and a plurality of leads extending away from the die attach region. The die attach region includes one or more apertures. A molding material is around at least portions of the die attach region of the leadframe structure and the semiconductor die. The molding material is also within the one or more apertures.

Abstract: A resin molded type semiconductor device has: a semiconductor chip (12) which is mounted on a die pad portion (11) of a lead frame (9); thin metal wires (14) which connect terminals of the semiconductor chip (12) to inner lead portions (13) of the lead frame (9); and a sealing resin (15), and the lead frame (9) is subjected to an upsetting process so that a supporting portion (11) is located at a position higher than the inner lead portions (13). Since the sealing resin of a thickness corresponding to the step difference of the upsetting exists below the supporting portion, the adhesiveness between the lead frame and the sealing resin can be improved, and high reliability and thinning are realized.

Abstract: There are provided the steps of forming a plurality of opening portions by punching predetermined portions of a metal plate, forming crushed portions by pushing crushed margin portions, which are defined in vicinity of both side edge portions of the opening portions of the metal plate, to reduce a thickness, defining a width W3 between a side surface portion and a center portion to assure an interval between lead portions and also defining a width of a top end portion and a width of a base portion by punching center portions of the crushed portions except predetermined both-side portions and portions in vicinity of peripheral portions in which the crushed portions of the opening portions of the metal plate are not present, and defining the top end portions by punching a predetermined portion of the top end portion.

Abstract: A semiconductor device for supplying a signal to an electro-optical device which displays a two-dimensional image, includes first terminals which are formed along a first side of the semiconductor device in a longitudinal direction and have a length L1 in a direction intersecting the longitudinal direction at right angles; and second terminals which are formed along a second side intersecting the first side at right angles and have a length L2 which is greater than the length L1 in the longitudinal direction.

Abstract: A method and structure for reducing chip carrier flexing during thermal cycling. A semiconductor chip is coupled to a stiff chip carrier (i.e., a chip carrier having an elastic modulus of at least about 3×105 psi), and there is no stiffener ring on a periphery of the chip carrier. Without the stiffener ring, the chip carrier is able to undergo natural flexing (in contrast with constrained flexing) in response to a temperature change that induces thermal strains due to a mismatch in coefficient of thermal expansion between the chip and the chip carrier. If the temperature at the chip carrier changes from room temperature to a temperature of about −40° C., a maximum thermally induced displacement of a surface of the chip carrier is at least about 25% less if the stiffener ring is absent than if the stiffener ring is present.

Abstract: A semiconductor package includes a chip mounting pad having a peripheral edge. The package further includes a semiconductor chip attached to the chip mounting pad. The package further includes a plurality of leads. Each lead includes an inner end and an opposing distal end. Each inner end is disposed adjacent the peripheral edge in spaced relation thereto and vertically downset with respect to each respective distal end. The package further includes at least one isolated ring structure disposed along the peripheral edge between the peripheral edge and the inner ends of the leads in spaced relation thereto. The ring structure is electrically connected to the semiconductor chip and an inner end of at least one of the leads.

Abstract: A semiconductor device having electrodes formed along a peripheral part thereof in a staggered arrangement of lines including inside-line, central-line and outside-line electrodes. The inside-line electrodes are octagonal shaped with hypotenuses on the central-line electrode and the pellet sides thereof. The central-line electrodes are octagonal shaped with hypotenuses on the inside-line and outside-line electrode sides thereof. The maximum width of outside-line electrode wires between the hypotenuses of adjacent inside-line and central-line electrodes depends on the distance between centers of the inside-line and central-line electrodes, minimum lengths of the inside-line and central-line electrodes and electrode protective film, and the necessary minimum conductor interval between the central-line and inside-line electrodes. The position and form of the central-line and inside-line electrodes are determinable based on the given relationship and the necessary value of current.

Abstract: A method of making an interactive information package, including an interactive information closure including a radio frequency identification device, contemplates that a microelectronics assembly be provided, and positioned on an associated substrate for positioning adjacent an inside surface of the top wall portion of the closure of the package. In one embodiment, the mounting substrate is provided in the form of a disc-shaped sealing liner for the closure. In an alternate embodiment, the mounting substrate is laminated to an associated sealing liner, with the substrate, and microelectronics assembly positioned thereon, inserted together with the sealing liner into the associated molded closure.

Abstract: The semiconductor integrated circuit device comprises a planar leadframe having lead segments arranged in alternating order into first and second pluralities, the segments having their inner tips near the chip mount pad and their outer tips remote from the mount pad. The outer tips have a solderable surface. All outer tips are bent away from the leadframe plane into the direction towards the intended attachment locations on an outside substrate such that the first segment plurality forms an angle of about 70±1° from the plane and the second segment plurality forms an angle of about 75±1° (see FIG. 4). Consequently, the outer tips create a staggered lead pattern suitable for solder attachment to an outside substrate.

Abstract: A transistor and method for making the same are disclosed. The transistor is constructed from a collector layer, a base layer, and an emitter layer in a stacked arrangement. The emitter layer is etched to form a mesa on an etched surface, the mesa having a top surface that includes a portion of the emitter layer and an emitter contact and sides joining the top surface with the etched surface. First and second protective layers are then deposited over the emitter contact and etched surface and the portions of these layers that overlie the etched surface are removed. The first protective layer is then preferentially etched thereby undercutting a portion of the first protective layer on the sides of the mesa and creating an overhanging portion of the second protective layer that is utilized to align the deposition of the base contacts.

Abstract: A semiconductor package utilizing insulating peripheral sealing portions and pattern leads and methods for manufacturing such semiconductor packages are provided. The semiconductor package includes a substrate on which a semiconductor chip is mounted. The substrate includes a plurality of substrate pads and the semiconductor chip includes a plurality of chip pads on an active surface. The semiconductor chip is surrounded by one or more peripheral sealing layers and conductive lead patterns are formed across the peripheral sealing layer(s) to connect the chip pads to corresponding substrate pads. The chip and lead patterns may be encapsulated and the substrate may also be provided with external connection structures such as solder balls to complete the package.

Abstract: A semiconductor package includes a semiconductor die having a circuit side and a back side, a multi layered leadframe attached to the die, a dense array of terminal contacts in electrical communication with the die, and a plastic body encapsulating the die and the leadframe. The leadframe includes circuit side leads attached to the circuit side of the die, and back side leads located proximate to the back side of the die. Both the circuit side leads and the back side leads are wire bonded to bond pads on the die. In addition, the back side leads provide electrical paths between the bond pads and selected terminal contacts that would otherwise be inaccessible due to line/space design rules. A method for fabricating the package includes the steps of: attaching the die to the circuit side leads, attaching the back side leads to the circuit side leads, wire bonding the die to the leads, encapsulating the die, and then forming the terminal contacts.

Abstract: A two-lead, surface-mounting, high-power micro-leadframe semiconductor package has the same outline, mounting, and electrical functionality as industry standard leadframe packages but provides a lower internal resistance, a higher package power rating, and costs less to produce. The novel package incorporates one of a rectangular array of “micro-leadframes” (“MLFs”), each having parallel and respectively coplanar upper and lower surfaces etched in a plate having a uniform thickness. Each micro-leadframe includes an I-shaped die pad having a head, a foot, and opposite sides. First and second leads are disposed at the foot of the die pad, each having a side aligned with one of the sides of the pad. The second lead has an right-angled wire-bonding pad next to the die pad. A portion of a lower surface of each of the die pad and the leads is exposed through a lower surface of an envelope of plastic molded on the package to define package input/output terminals.

Abstract: A chip carrier with a dam bar structure is proposed. The chip carrier is defined with at least a chip attach area and a wire bonding area surrounding the chip attach area, allowing a chip to be mounted on the chip attach area and electrically connected to the wire bonding area by bonding wires bonded to the wire bonding area. A molding gate and a dam bar are formed on the substrate outside the chip attach area and wire bonding area. An molding compound is injected through the molding gate for encapsulating the chip and bonding wires. The dam bar is provided with a first gate directed toward the molding gate, a second gate and a third gate opposed to the second gate, wherein the second and third gates are each vertically arranged with respect to the molding gate, allowing the molding compound to divert its flow direction by the dam bar.

Abstract: A leadframe includes: a frame rail; a die pad, disposed inside the frame rail, for mounting a semiconductor chip thereon; and a plurality of internal inner leads, which are disposed to surround the die pad and each of which has a convex portion on the bottom thereof. The frame rail and the internal inner leads are retained by a lead retaining member on their upper and/or lower surface(s).

Abstract: In a semiconductor device, and a fabrication method thereof, a semiconductor element having bumps is mounted to a rear side of a base film. A plurality of inner leads are formed at a front side of the base film and located at peripheral portions of the semiconductor element. The inner leads are electrically connected with the bumps of the semiconductor element from the rear side of the base film. Apertures for connection of the bumps of the semiconductor element with the inner leads are provided at the base film. The apertures for connection are provided at locations which exclude locations of distal end portions of the inner leads. The distal end portions of the inner leads are fixed to the base film. The bumps of the semiconductor element and the base film are electrically connected through the apertures for connection from the rear surface.

Abstract: An improved tape carrier package (TCP) structure is proposed, which is characterized in the provision of dummy pads and dummy leads to help reinforce the package construction. The dummy pads are provided on the corners of the semiconductor chip, while the dummy leads are bonded between the dummy pads and corner-situated lead-bonding areas on the tape carrier. During assembly, since dummy leads are bonded between the dummy pads and corner-situated lead-bonding areas, the corners of the semiconductor chip can be firmly supported as well as the four sides of the semiconductor chip which are supported by the I/O leads. As a result the package construction is reinforced. During inner-lead bonding (ILB) process, such reinforcement can help prevent the cracking of the I/O leads.

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of pure tin on said nickel layer, selectively covering areas of said leadframe intended for attachment to other parts; and a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment.

Abstract: A semiconductor device in which a semiconductor chip, a lead frame and metal wires for electrically connecting the lead frame are sealed with sealing resin. The lead frame has a plurality of lead terminal portions, a supporting portion for supporting the semiconductor chip, and hanging lead portions supporting the supporting portion. Each of the lead terminal portions adjacent to the hanging lead portion is a chamfered lead terminal portion having, at its head, a chamfered portion formed substantially in parallel with the hanging lead portion so as to avoid interference with the hanging lead portion.

Abstract: A lead frame for a semiconductor device. The semiconductor device has a sheet with oppositely facing sides and a thickness between the oppositely facing sides. The sheet has first and second unit lead frames. Each unit lead frame has a support for a semiconductor chip and at least one lead space from the support. The sheet has a tie bar network which connects a) the support to the at least one lead on each of the first and second lead frames and b) the first and second lead frames, each to the other. The sheet has a dividing line along which the sheet can be cut to separate the first and second lead frames from each other. The tie bar network consists of at least one tie bar extending along a substantial length of the dividing line. The support has a first thickness between the oppositely facing sides of the sheet. The at least one tie bar has a second thickness between the oppositely facing sides of the sheet over a substantial length of the dividing line that is less than the first thickness.

Abstract: A method of making a Fe-Ni strip whose chemical composition comprises, by weight: 36% ≦Ni+Co≦43%; 0%≦Co≦3%; 0.05%≦C≦0.4%; 0.2%≦Cr≦1.5%; 0.4%≦Mo≦3%; Cu≦3%; Si≦0.3%, Mn≦0.3%; the rest being iron and impurities, the alloy having an elastic limit Rp0.2 more than 750 Mpa and a distributed elongation Ar more than 5%. The alloy is optionally recast under slag. The strip is obtained by hot-rolling above 950° C., then cold-rolling and carrying out a hardening treatment between 450° C. and 850° C., the hardening heat treatment being preceded by a reduction of at least 40%. The invention is useful for making integrated circuit support grids and electronic gun grids.

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

Abstract: A dual-die integrated circuit package is provided, which can be used to pack two semiconductor dies in the same package unit. These two semiconductor dies are of the type having an array of bonding pads formed thereon. The dual-die integrated circuit package has a first leadframe and a second leadframe, each having a die pad and a plurality of leads, with the die pad being arranged at a different elevation with respect to the leads. The two semiconductor dies are mounted on the respective die pads of the two leadframes, with the bottom surface of each semiconductor die facing the bottom surface of the other, allowing the bottom surface of one semiconductor die to be separated from the die pad of the first leadframe and the bottom surface of the other semiconductor die to be separated from the die pad of the second leadframe.

Abstract: An active microelectronic element such as a semiconductor chip or wafer is bonded to an interconnect element having substantially the same coefficient of thermal expansion as the active element using small, rigid bonds, desirably made by a solid-phase bonding technique, which accommodate numerous closely-spaced interconnections. The assembly is provided with terminals movable with respect to the active element and interconnect element. The interconnect element desirably provides low-impedance conductive paths interconnecting active electronic devices within the active element.

Abstract: A semiconductor chip mounted on a flat package has two functions. The semiconductor chip has a function selecting pad supplied with a selection voltage for selecting a function. The semiconductor chip also has voltage pads for outputting function selecting voltages. Thereby the selection of a function is enabled by bonding connection such that the voltage of the voltage pad or the voltage pad is inputted to the function selecting pad via a lead frame. Thus the function can be selected and determined by the bonding connection at the time of fabrication.

Abstract: A semiconductor packaging apparatus for preventing cracking and delamination in a packaged semiconductor chip by controlling the die attach fillet height. Specifically, the present invention controls the die attach material height, thereby controlling the die attach fillet height, and thereby reducing shear stress in the die itself. Advantages of the present invention include increasing wire-bond reliability and package reliability without the need for requalification of existing products. By using currently qualified molding compounds and die attach epoxies in conjunction with the present technique for controlling the die attach epoxy height in order to control the die attach fillet height, the overall assembly process may be maintained. Thus, neither thermal performance nor electrical performance is compromised.

Abstract: A leadframe having component receiving projections, such as electrical connectors, adapted to receive a component thereon, such as a ferrite filter, and having means for securing the position of the component on the leadframe during premold or overmold processes.