Abstract: A method of manufacturing a die package structure includes steps described below. A conductive substrate with a plurality of trenches is provided. A die is disposed in each of the trenches. A conductive layer is formed covering the dies and the conductive substrate. A patterned photoresist layer with a plurality of openings is formed exposing a plurality of areas of the conductive layer. A mask is formed on each of the areas of the conductive layer. The patterned photoresist layer is removed after forming the masks. By using the masks, the conductive layer and the conductive substrate under thereof are selectively etched to a predetermined depth to form a plurality of conductive bumps and a plurality of electrodes, in which a remaining of the conductive substrate includes a bottom substrate, the electrodes and the conductive bumps. An upper sealing layer is formed covering the bottom substrate and the dies.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes the steps of (a) preparing a lead frame including a power chip die pad to which two terminals are connected, a control element die pad to which one terminal is connected, and tie bar portions connecting between a plurality of terminals including the two terminals, (b) placing a power chip and a free wheel diode on the power chip die pad and placing ICs on the control element die pad, (c) encapsulating in a mold resin to allow the tie bar portions to be exposed outside and a plurality of terminals including the two terminals and the one terminal to protrude outward, and (d) removing the tie bar portions other than the tie bar portions connecting the two terminals.

Abstract: A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

Abstract: An apparatus includes a coverlay layer having a void therein. A backing layer is disposed against a first side of the coverlay layer. A transmission layer is disposed against a second side of the coverlay layer opposite the first side such that a chamber is formed within the void between the transmission layer and the backing layer. The transmission layer includes a first area having a first level of light transmissivity and a second area having a second level of light transmissivity that is greater than the first level of light transmissivity. The transmission layer is oriented so that at least a portion of each of the first area and the second area overlaps the void. A light source is positioned in the chamber between the first area of the transmission layer and the backing layer.

Abstract: In one general aspect, a device can include a leadframe including at least one of an external input terminal or an external output terminal, an interposer made of an insulating material, and a redistribution layer coupled to the interposer and made of a conductive material. The redistribution layer can include a plurality of traces. The device can also include a semiconductor die disposed between the redistribution layer and the leadframe.

Abstract: The present invention generally relates to a fingerprint sensor package comprising a substrate having thereon a plurality of electrical connection pads, a fingerprint sensor arranged on the substrate and electrically connected to at least one of the electrical connection pads, a bond wire loop formed from a bond wire having two ends of which at least one end is mechanically and electrically attached to a first one of the electrical connection pads, and a force sensing member in electrical contact with the first electrical connection pad via an upper portion of the bond wire loop, and in electrical contact with a second one of the electrical connection pads different from the first electrical connection pad, wherein an electrical property of the force sensing member is alterable in response to a deformation of the force sensing member.

Abstract: A method of die and clip attachment includes providing a clip, a die and a substrate, laminating a sinterable silver film on the clip and the die, depositing a tack agent on the substrate, placing the die on the substrate, placing the clip on the die and the substrate to create a substrate, die and clip package, and sintering the substrate, die and clip package.

Abstract: In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

Abstract: In the semiconductor device, a screw has a head section embedded in a case groove section provided in a frame placing stage of a case to cause side and front surfaces of the head section to be covered by the case, thereby fixing the screw to the case. A threaded section passes through a frame through hole of a frame exposed section disposed above the head section to protrude upward to be exposed on a side facing away from the base plate.

Abstract: Provided is a sealing structure including a housing that houses a heat generating member or a heat dissipation member thereinside, and a resin that is filled in the housing. In a sectional view, the housing includes a first recess portion in a position facing the heat generating member or the heat dissipation member.

Abstract: In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

Abstract: There is provided a semiconductor light-emitting device including: a main lead including a main surface; a semiconductor light-emitting element mounted on the main surface of the main lead; a bonding material that bonds the semiconductor light-emitting element to the main surface of the main lead; a sub lead arranged in a first direction with respect to the main lead and including a main surface facing the same side as the main surface of the main lead; a first wire including a first end connected to the main surface of the sub lead and a second end connected to the semiconductor light-emitting element; a resin case including a case main surface facing the same direction as the main surfaces of the main lead and the sub lead and supporting the main lead and the sub lead.

Abstract: An electronic module has a rear surface-exposed conductor 10, 20, 30 having a rear surface-exposed part 12, 22, 32 whose rear surface is exposed; an electronic element 15, 25 provided on a front surface of the rear surface-exposed conductor 10, 20, 30; and a connector 60 configure to connect the rear surface-exposed conductor 10, 20, 30 and the electronic element 15, 25 or two rear surface-exposed conductors 10, 20, 30 each other. A groove 150 is provided on the front surface of the rear surface-exposed conductor 10, 20, 30. The sealing part 90 is provided with a press hole or a press impression 110, 120, 130 used to press the rear surface-exposed conductor 10, 20, 30. In an in-plane direction, a center portion of the press hole or the press impression 110, 120, 130 is provided on the side opposite to the connector 60 or the electronic element 15, 25 with respect to the groove 150.

Abstract: Generally described, one or more embodiments are directed to a leadframe package having a plurality of leads, a die pad, a semiconductor die coupled to the die pad, and encapsulation material. An inner portion of the die pad includes a perimeter portion that includes a plurality of protrusions that are spaced apart from each other. The protrusions aid in locking the die pad in the encapsulation material. The plurality of leads includes upper portions and base portions. The base portion of the plurality of leads are offset (or staggered) relative to the plurality of protrusions of the die pad. In particular, the base portions extend longitudinally toward the die pad and are located between respective protrusions. The upper portions of the leads include lead locks that extend beyond the base portions in a direction of adjacent leads. The lead locks and the protrusion in the die pad aid in locking the leads and the die pad in the encapsulation material.

Abstract: A semiconductor device includes a first lead having a base extending in a first direction, and an IC on the base. The semiconductor device also includes a second lead, a third lead and fourth leads. The second lead includes a first belt-like section on one side of the base in the first direction, extending in a second direction, and paired second belt-like sections extending in the first direction from the first belt-like section. The third lead is on one side in the first direction. The fourth leads are on one side of the third lead in the first direction. First switching elements are bonded to the third lead. Second switching elements are respectively bonded to the fourth leads. The base overlaps with the first belt-like section 121 when viewed in the first direction. At least a part of the base is between the second belt-like sections.

Abstract: According to an embodiment of the disclosure, a method of fabricating a carrier for a wafer level package (WLP) by using a lead frame, wherein the lead frame is fabricated by forming a trench and a post by performing first half etching on an upper surface of a base substrate comprising a conductive material, filling the first-half-etched surface with resin of an insulating material, removing the resin exposed to outside of the trench so that an upper surface of the trench and an upper surface of the resin are at a same level, and performing second half etching on a lower surface of the base substrate, in which a memory chip is attached to the lower surface of the base substrate.

Abstract: In a power semiconductor device, power semiconductor elements are mounted on a large die pad and the like. The large die pad is joined to a power lead via a lead stepped portion. The large die pad has a first end portion and a second end portion located with a distance therebetween in the X axis direction. In the Y axis direction, the lead stepped portion is joined to the first end portion side relative to a central line between the first end portion and the second end portion. The large die pad is inclined such that a distance between the large die pad and the first main surface of the molding resin is longer from the first end portion toward the second end portion.

Abstract: A semiconductor package includes a pad and leads having a planar profile shaped from a planar base metal, a semiconductor die attached to the pad, a wire bond extending from the semiconductor die to a respective lead, and mold compound covering the semiconductor die, the wire bond, and a first portion of the respective lead, wherein a second portion of the respective lead extends beyond the mold compound. A shape of the respective lead within the planar profile includes a notch indented relative to a first elongated side of the shape of the respective lead and a protrusion protruding outwardly relative to a second elongated side of the shape of the respective lead. The notch and the protrusion are each partially covered by the mold compound and partially outside the mold compound.

Abstract: A lead frame array for carrying chips includes a plurality of lead frames. Any four lead frames adjacent to each other and have two pairs of linking bridge groups which are connected any two lead frames adjacent to each other by one of the linking bridge groups. Each linking bridge group has an inner linking bridge, a slanted linking bridge and an outer linking bridge. An LED package structure with multiple chips is further provided, which includes a lead frame formed by cutting the lead frame array.

Abstract: An electronic device having a package structure with conductive leads, first and second dies in the package structure, as well as first and second conductive plates electrically coupled to the respective first and second dies and having respective first and second sides spaced apart from and directly facing one another with a portion of the package structure extending between the first side of the first conductive plate and the second side of the second conductive plate to form a capacitor. No other side of the first conductive plate directly faces a side of the second conductive plate, and no other side of the second conductive plate directly faces a side of the first conductive plate.

Abstract: A coreless semiconductor package comprises a plurality of horizontal layers of dielectric material. A magnetic inductor is situated at least partly in a first group of the plurality of layers. A plated laser stop is formed to protect the magnetic inductor against subsequent acidic processes. An EMIB is situated above the magnetic inductor within a second group of the plurality of layers. Vias and interconnections are configured within the horizontal layers to connect a die of the EMIB to other circuitry. A first level interconnect is formed on the top side of the package to connect to the interconnections. BGA pockets and BGA pads are formed on the bottom side of the package. In a second embodiment a polymer film is used as additional protection against subsequent acidic processes. The magnetic inductor comprises a plurality of copper traces encapsulated in magnetic material.

Abstract: A semiconductor package includes a mounting substrate, a first semiconductor chip on the mounting substrate and electrically connected to the mounting substrate, a heat dissipation element on an upper surface of the first semiconductor chip, where the heat dissipation element comprises a sidewall comprising an inclined surface and an upper surface directly connected to the inclined surface, and a package molding portion on the mounting substrate and the inclined surface of the heat dissipation element. The package molding portion exposes at least a portion of the upper surface of the heat dissipation element, the upper surface of the heat dissipation element is parallel to the upper surface of the first semiconductor chip, and an angle formed by the upper surface of the heat dissipation element and the inclined surface of the heat dissipation element is an obtuse angle.

Abstract: A method for forming a semiconductor package is disclosed. The method includes providing a package substrate having top and bottom major package substrate surfaces, the top major package surface including a die attach region. A die having first and second major die surfaces is attached onto the die attach region. The second major die surface is attached to the die attach region. The first major die surface includes an die active region and a cover adhesive region surrounding the die active region. The method also includes applying a cover adhesive to the cover adhesive region on the first major die surface. A protective cover with first and second major cover surfaces and side surfaces is attached to the die using the cover adhesive. The second major cover surface contacts the cover adhesive. The protective cover covers the die active region. The protective cover includes a discontinuity on at least one of the side surfaces.

Abstract: A package includes a semiconductor die having a first load terminal at a first side and a second load terminal at a second side opposite the first side, a metal block attached to the second load terminal and providing a single primary thermal conduction path of the package, a first metal lead electrically connected to the first load terminal, a second metal lead electrically connected to the second load terminal, and a mold compound embedding the semiconductor die, the metal block, and each metal lead. Each metal lead and the metal block are exposed from the mold compound at a first side of the package. Each metal lead is exposed from the mold compound at a second side of the package opposite the first side, so that the package is configured for surface mounting at either the first side or the second side of the package.

Abstract: A chip package structure includes at least one chip, at least one thermally conductive element, a molding compound, and a redistribution layer. The respective chip has an active surface and a back surface opposite to each other and a plurality of electrodes disposed on the active surface. The thermally conductive element is disposed on the back surface of the respective chip. The molding compound encapsulates the chip and the thermally conductive element and has an upper surface and a lower surface opposite to each other. A bottom surface of each of the electrodes of the respective chip is aligned with the lower surface of the molding compound. The molding compound exposes a top surface of the respective thermally conductive element. The redistribution layer is disposed on the lower surface of the molding compound and electrically connected to the electrodes of the respective chip.

Abstract: A process discharge gas polluted material removal device with a regenerating means of a polluted oxidation catalyst includes: an oxidation catalyst tower connected to a pipe circulating a process discharge gas including a combustible material, an organic material, an inorganic material, and nitrogen oxide and having a first temperature and having an oxidation catalyst embedded therein, the oxidation catalyst oxidizing and removing the combustible material; and a plasma reactor connected to the oxidation catalyst tower in front of the oxidation catalyst, generating a synthesis gas including hydrogen and having a high temperature of 300° C. or more by a plasma reaction, and supplying the synthesis gas including the hydrogen to the oxidation catalyst to regenerate the oxidation catalyst poisoned by the organic material and the inorganic material.

Abstract: A land grid array semiconductor device is disclosed which is configured for removable insertion to and from a host device. The land grid array semiconductor device may include a first set of one or more contact fingers on the first surface of the land grid array semiconductor device, and a second set of one or more contact fingers on the second surface of the land grid array semiconductor device. In order to electrically couple the second set of one or more contact fingers, one or more electrical connectors may be provided physically extending between the second set of one or more contact fingers and at least one of the substrate and the at least one semiconductor die.

Abstract: A semiconductor package having an aperture in a die pad and solder in the aperture coplanar with a surface of the package is disclosed. The package includes a die pad, a plurality of leads, and a semiconductor die coupled to the die pad with a die attach material. A cavity or aperture is formed through the die pad to expose a portion of the die attach material. Multiple solder reflows are performed to reduce the presence of voids in the die attach material. In a first solder reflow, the voids of trapped gas that form when attaching the die to the die pad are released. Then, in a second solder reflow, solder is added to the aperture coplanar with a surface of the die pad. The additional solder can be the same material as the die attach material or a different material.

Abstract: A semiconductor device package includes a first substrate, a second substrate, a conductive structure, a first solder and a second solder. The second substrate is disposed over the first substrate. The conductive structure is disposed between the first substrate and the second substrate. The conductive structure includes a first wetting portion, a second wetting portion, and a non-wetting portion disposed between the first wetting portion and the second wetting portion. The first solder covers the first wetting portion and connects the conductive structure to the first substrate. The second solder covers the second wetting portion and connects the conductive structure to the second substrate. The first solder is spaced apart from the second solder by the non-wetting portion.

Abstract: The present disclosure relates to segmented shielding using wirebonds. In an exemplary aspect, a shield is formed from a series of wires (e.g., wirebonds) to create a wall and/or shielded compartment in an integrated circuit (IC) module. The wires can be located in any area within the IC module. The IC module may be overmolded with an insulating mold compound, and a top surface of the insulating mold can be ground or otherwise removed to expose ends of the wires to a shield layer which surrounds the insulating mold. Some examples may further laser ablate or otherwise form cavities around the ends of the wires to create stronger bonding between the wires of the shield and the shield layer.

Abstract: A packaging process and a packaging structure of an electronic component are provided. By the packaging process and the packaging structure of the disclosure, the groove of the thermal conduction structure is covered by the first metal re-distribution layer. Therefore, the flank of the thermal conduction structure is easy to coat the conducting material. Moreover, because the flank of the thermal conduction structure is coated, the surface of the flank of the thermal conduction structure is difficultly oxidized. Furthermore, the conducting material between the thermal conduction structure and the board is flat, so that automated optical inspection of the packaging structure is easy to implement.

Abstract: A microelectronic package includes at least two semiconductor die, one die stacked over at least partially another. At a least the upper die is oriented with its active surface facing in the direction of a redistribution structure, and one or more wires are coupled to extend from contacts on that active surface into conductive structures in the redistribution structure.

Abstract: Leadframe systems and related methods. Specific implementations of leadframe systems may include a die pad, a semiconductor die coupled to the die pad, where the semiconductor die has a perimeter. A leadframe may be coupled over the die pad and the semiconductor die where the leadframe has a solder dam coupled around the semiconductor die and, the solder dam has a perimeter that corresponds with the semiconductor die The die pad may have no groove adjacent to the semiconductor die.

Abstract: A method of manufacturing a packaged board includes the steps of blanketing a wiring board with devices disposed thereon in a molding die and supplying the molding resin to the molding die, provisionally sintering the molding resin at a relatively low provisional sintering temperature below a final sintering temperature, detaching the wiring board from the molding die, and thereafter, placing the wiring board on a first base having a first flat surface, pressing the wiring board with a second base having a second flat surface parallel to the first flat surface, and heating the wiring board at the final sintering temperature to finally sinter the provisionally sintered molding resin while keeping its thickness uniform.

Abstract: A semiconductor device package includes a carrier, a first interposer disposed and a second interposer. The second interposer is stacked on the first interposer, and the first interposer is mounted to the carrier. The combination of the first interposer and the second interposer is substantially T-shaped.

Abstract: According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Abstract: A package includes a leadframe having first surface and a second surface opposing the first surface, the leadframe forming a plurality of leads, a first semiconductor die mounted on the first surface of the leadframe and electrically connected to at least one of the plurality of leads, a second semiconductor die mounted on the second surface of the leadframe, wire bonds electrically connecting the second semiconductor die to the leadframe, and mold compound at least partially covering the first semiconductor die, the second semiconductor die and the wire bonds.

Abstract: A packaging process and a packaging structure of an electronic component are provided. By the packaging process and the packaging structure of the disclosure, the groove of the thermal conduction structure is covered by the first metal re-distribution layer. Therefore, the flank of the thermal conduction structure is easy to coat the conducting material. Moreover, because the flank of the thermal conduction structure is coated, the surface of the flank of the thermal conduction structure is difficulty oxidized. Furthermore, the conducting material between the thermal conduction structure and the board is flat, so that automated optical inspection of the packaging structure is easy to implement.

Abstract: A packaged semiconductor device includes a leadframe including a finger pad(s) that is integrated, and spans a finger pad area including a width narrower than its length. A first portion of the finger pad area provides a die support area. A second portion of the finger pad area provides a wire bond area including first and second wire bond pads on a first and second side of the die support area. One of the wire bond pads further includes a lead terminal integrally connected. The IC die has a top side with bond pads and a back side having a non-electrically conductive die attach material attached to the die support area. Bond wires extend from the bond pads to the first and second wire bond pads. A mold compound encapsulates the packaged semiconductor device leaving exposed at least the lead terminal on a bottom side of the packaged semiconductor device.

Abstract: A multichip module (MCM) power package includes a multilayer routable leadframe substrate (MRLF) substrate including a first and a second RLF layer. A multilayer extending via extends from the first into the second RLF layer. A first vertical FET has a side flipchip attached to a bottom side of the second RLF. A second vertical FET has a side flipchip attached to a bottom side of the second RLF layer, and contacts the multilayer extending via. A controller integrated circuit (IC) is flipchip attached a top side of the MRLF substrate at least partially over the first vertical FET. A top mold compound is on a top side of the MRLF substrate lateral to the controller IC that is lateral to a metal pad on the multilayer extending via. A bottom side of the first and second vertical FET are exposed by a bottom mold compound layer.

Abstract: The one end portion of the connector of the semiconductor device includes: a horizontal portion; a first inclined portion that is connected to the horizontal portion and is located closer to the tip end side of the one end than the horizontal portion, and the first inclined portion having a shape inclined downward from the horizontal portion; and a control bending portion that is connected to the first inclined portion and positioned at the tip of the one end portion, and the control bending portion bent downwardly along the bending axis direction. The lower surface of the control bending portion is in contact with an upper surface of the second terminal.

Abstract: A package and method of making a package is disclosed. In one example, the package includes an electronic chip having at least one pad, an encapsulant at least partially encapsulating the electronic chip, and an electrically conductive contact element extending from the at least one pad and through the encapsulant so as to be exposed with respect to the encapsulant. The electrically conductive contact element comprises a first contact structure made of a first electrically conductive material on the at least one pad and comprises a second contact structure made of a second electrically conductive material and being exposed with respect to the encapsulant. At least one of the at least one pad has at least a surface portion which comprises or is made of the first electrically conductive material.

Abstract: A packaging device including a first semiconductor device, a thermal dissipating component, an encapsulation layer, a via, and a pad. The first semiconductor device includes a substrate, an active region, and an electrode. The active region is disposed between the substrate and the electrode. The substrate has a first surface opposite to the active region, and the electrode has a second surface opposite to the active region. The thermal dissipating component is disposed on the first surface of the substrate. The encapsulation layer encloses the second surface of the electrode and a part of the thermal dissipating component, such that another part of the thermal dissipating component is exposed by the encapsulation layer. The pad is disposed on the encapsulation layer. The via is disposed in the encapsulation layer and connects the pad to the electrode.

Abstract: An electronic component is provided that includes multiple conductive terminals and an insulator integrated with the conductive terminals. A leg part possessed by one of the conductive terminals and a leg part possessed by another one of the conductive terminals are disposed so as to vertically overlap each other. The leg part possessed by one of the conductive terminals and the leg part possessed by another one of the conductive terminals have different lengths, and the tip of the shorter leg part of the two is covered by a thick part of the insulator.

Abstract: A power module and a manufacturing method thereof are disclosed. The power module includes a substrate, a power device, a leading component and a molding component. The substrate includes a first side, a second side and a conductive wire. The power device is disposed on the substrate and electrically connected with the conductive wire. The leading component is disposed on the substrate and includes a first horizontal portion and a vertical portion connected with each other. The vertical portion is electrically connected with the conductive wire. The leading component includes a first contact surface and a second contact surface, which are non-coplanar. The molding component is disposed on the substrate and covers at least portion of the substrate and at least portion of the leading component. The first contact surface and the second contact surface are uncovered by the molding component.

Abstract: A semiconductor module has at least two semiconductor components which are arranged within a housing in each case between two electrical conduction elements and are electrically conductively connected to the electrical conduction elements. The electrical conduction elements respectively have a contact extension that is led out of the housing, wherein two contact extensions arranged in different planes are connected to one another outside the housing via a contact element, which forms a current path between the two contact extensions outside the housing.

Abstract: A semiconductor die package includes a semiconductor die, a film for improving die warpage bonded to a first face of the semiconductor die, a plurality of electrically conductive bumps formed on a second face of the semiconductor die, a substrate onto which the electrically conductive bumps of the second face of the semiconductor die are bonded to electrically connect the semiconductor die and the substrate, and a mold compound applied these components to form an exposed surface of the semiconductor die package that is coplanar with an exposed surface of the film.

Abstract: A leadframe having extensions around an outer edge of a die pad are disclosed. More specifically, leadframes are created with a flange formed at the outer edge of the die pad and extending away from the die pad. The flange is bent, such that it is positioned at an angle with respect to the die pad. Leadframes are also created with anchoring posts formed adjacent the outer edge of the die pad and extending away from the die pad. The anchoring posts have a central thickness that is less than a thickness of first and second portions opposite the central portion. When the leadframe is incorporated into a package, molding compound completely surrounds each flange or anchoring post, which increases the bond strength between the leadframe and the molding compound due to increased contact area. The net result is a reduced possibility of delamination at edges of the die pad.

Abstract: A lead frame includes a die pad having a surface, a first lead post, a first lead, a second lead post, and a second lead. The first lead post has a surface coplanar with the surface of the die pad and is in a first plane. The first lead is coupled to the first lead post. The second lead post is in a second plane different from the first plane. The second lead is coupled to the second lead post.

Abstract: A light emitting diode (LED) device includes a semiconductor layer and one or more portions of a wafer on which the semiconductor layer was formed, the other portions of the wafer having been removed by an etching process. The semiconductor layer has a front surface that includes a light emitting area. The remnants of the wafer on which the semiconductor layer are disposed on the front surface of the semiconductor layer and define a trench. The trench is positioned such that the light emitting area emits light into the trench. The remnants of the wafer make the LED device more robust and the trench may reduce crosstalk with adjacent LED devices.