Abstract: An apparatus comprises a dielectric layer formed on a first side of a substrate, a first side interconnect structure comprising a first metal line and a pad formed in the dielectric layer, wherein the pad comprises a bottom portion formed of a first conductive metal and an upper portion formed of a second conductive metal, and wherein sidewalls of the upper portion are surrounded by the bottom portion and a top surface of the pad is coplanar with a top surface of the first metal line and a passivation layer formed over the dielectric layer.

Abstract: A printed circuit board and a method of manufacturing the same are provided. A printed circuit board having conductive patterns formed in multilayers on an insulating material laminated on both surfaces of a glass core is provided. The printed circuit board includes a first insulating material disposed on a first surface and a second surface of the glass core. and a second insulating material disposed on the first insulating material. The first insulating material surrounds a first portion of a side surface of the glass core and the second insulating material surrounds a second portion of the side surface of the glass core, the second portion being a portion of the glass core not surrounded by the first insulating material.

Abstract: A flexible printed circuit assembly, having a first flexible printed circuit having a first conductive layer and a device that is connected the first conductive layer; and a second flexible printed circuit having a second conductive layer, an insulating center layer, and a third conductive layer, the insulating center layer arranged in-between the second and the third conductive layers, the second conductive layer and the insulating center layer being removed to form an opening to expose an upper surface of the third conductive layer, wherein the first flexible printed circuit is arranged such that the device is accommodated inside the opening, a lower surface of the device being in thermal connection with the third conductive layer, and the first conductive layer is arranged to be in electrical connection with the second conductive layer.

Abstract: A semiconductor package and a method for fabricating the semiconductor package are provided. The semiconductor package includes a base layer, a plurality of conductive pillars, a semiconductor element, and an encapsulation. The base layer has opposing first and second surfaces and a receiving part. The conductive pillars are formed on the second surface. Each of the conductive pillars has first and second terminals, and the second terminal is distant from the second surface of the base layer. The semiconductor element is received in the receiving part, and has opposing active and passive surfaces, and the active surface is exposed from the first surface. The encapsulation is formed on the second surface, encapsulates the conductive pillars and the semiconductor element, and has opposing third and fourth surfaces, and the second terminals of the conductive pillars are exposed from the fourth surface. The semiconductor package is provided with the conductive pillars having fine pitches.

Abstract: A printed circuit board includes a first substrate, two first circuits formed on a surface of the first substrate, and a thick copper circuit. The thickness of each first circuit is smaller than the thickness of the first substrate, and the first substrate and one of the first circuits cooperatively define a circuit trench. The thick copper circuit is arranged in the circuit trench and is integrally connected to the first circuit, which is corresponding to the groove. The thick copper circuit and the connected first circuit are defined as a thick circuit, and another first circuit is defined as a thin circuit. The length of the thick copper circuit connected to the corresponding first circuit is identical to or greater than 10% of the length of the thick circuit. Additionally, the instant disclosure also provides a method for manufacturing a printed circuit board.

Abstract: The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic member and the Cu member, and intermetallic compounds containing P and Ti are dispersed in the Cu—Sn layer.

Abstract: A process for a substrate having a component-disposing area is provided, and includes the following steps. A core layer including a first surface, a metallic layer and a component-disposing area is provided. The metallic layer is disposed on the first surface and patterned to form a patterned metallic layer including pads located in the component-disposing area. A first dielectric layer is formed on the first surface and covers the patterned metallic layer. A laser-resistant metallic pattern is formed on the first dielectric layer and surrounds a projection area of the first dielectric layer. A release film is disposed on the projection area and covers a portion of the laser-resistant metallic pattern within the projection area. A second dielectric layer is formed on the first dielectric layer and covers the release film and the laser-resistant metallic pattern. A first open hole and a plurality of second open holes are formed.

Abstract: A semiconductor arrangement includes a plurality of chip assemblies, each of which includes a semiconductor chip having a semiconductor body with a top side and an underside, a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, an electrically conductive top compensation lamina arranged on a side of the top main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the top main electrode, an electrically conductive bottom compensation lamina arranged on a side of the bottom main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the bottom main electrode, and a dielectric embedding compound enclosing the semiconductor chip laterally circumferentially in a ring-shaped fashion such that the side of the compensation laminae facing away from the semiconductor body are at least not completely covered by the embedding compound.

Abstract: An embodiment of a packaged RF amplifier device includes a device substrate, a transistor die coupled to the device substrate, and an isolation structure coupled to the transistor die. The transistor die has a top die surface, a bottom die surface, a semiconductor substrate, first and second transistors formed in the semiconductor substrate, a conductive structure at the top die surface and positioned between the first and second transistors, and a low resistance path that extends vertically through the semiconductor substrate between the conductive structure and the bottom die surface. The isolation structure is coupled to the conductive structure and extends into an area above the top die surface between the first and second transistors. The isolation structure may be a wirebond fence, a conductive wall, conductive pillars or vias, or a plated trench that extends vertically upward from the conductive structure. The device may be encapsulated with molding compound.

Abstract: Methods and apparatuses for a attaching a first substrate to a second substrate are provided. In some embodiments, a first substrate has a protective layer, such as a solder mask, around a die attach area, at which a second substrate is attached. A keep-out region (e.g., an area between the second substrate and the protective layer) is a region around the second substrate in which the protective layer is not formed or removed. The keep-out region is sized such that a sufficient gap exists between the second substrate and the protective layer to place an underfill between the first substrate and the second substrate while reducing or preventing voids and while allowing traces in the keep-out region to be covered by the underfill.

Abstract: The present disclosure relates to a semiconductor substrate, a semiconductor package structure, and methods for making the same. A method includes providing a substrate and a carrier layer. The substrate includes a first patterned metal layer, a second patterned metal layer spaced from the first patterned metal layer, and a dielectric layer disposed between the first patterned metal layer and the second patterned metal layer. The dielectric layer covers the second patterned metal layer. The dielectric layer defines first openings exposing the second patterned metal layer, and further defines a via opening extending from the first patterned metal layer to the second patterned metal layer. A conductive material is disposed in the via and electrically connects the first patterned metal layer to the second patterned metal layer. The carrier layer defines second openings exposing the second patterned metal layer.

Abstract: The description relates to devices, such as computing devices. One example can include a sandwich structured composite housing. The example can also include a set of electronic components positioned over the sandwich structured composite housing. The set of electronic components can have a profile against the sandwich structured composite housing. The sandwich structured composite housing can have a corresponding negative profile.

Abstract: A radio frequency (RF) module comprises an electrical reference, or ground, plane to which one or more RF devices disposed on the module are electrically coupled, and may be disposed beneath the RF devices. The reference plane may be segmented as to form one or more segments of the reference plane that are at least partially electrically isolated from surrounding segments or devices. A module may have a plurality of devices disposed thereon, wherein separate, at least partially isolated reference planes, correspond to different devices of the module. The reference plane may be etched or cut to achieve such segmentation.

Abstract: According to one embodiment, a memory device includes a conductive member and a stacked body provided on the conductive member. The stacked body includes a plurality of first interconnections being stacked to be separated from each other, a memory cell connected with one of the first interconnections, a plurality of contact plugs, an insulating member. Each of the contact plugs connects each of the first interconnections with an upper surface of the conductive member. One of the contact plugs includes an upper part, and a lower part. The lower part is provided between the upper part and the conductive member. The lower part includes a first portion and a second portion. The first portion is connected with one of the first interconnections. The second portion is connected with the conductive member. The insulating member is provided between the first portion and the second portion.

Abstract: A pad structure usable with a semiconductor device may include an insulating layer pattern structure, a plug, and a pad. The insulating layer pattern structure has a plug hole and at least one via hole. The plug is formed in the plug hole. The pad is formed on the insulating layer pattern structure. The pad is electrically connected with the plug and has a lower surface and an uneven upper surface. The lower surface includes a protruded portion inserted into the via hole. The uneven upper surface includes a recessed portion and an elevated portion—to provide high roughness and firm connection.

Abstract: Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one embodiment, at least one first microelectronic die is attached to a second microelectronic die, wherein an underfill material is provided between the second microelectronic die and the at least one first microelectronic die. The microelectronic substrate is then formed by laminating the first microelectronic die and the second microelectronic die in a substrate material.

Abstract: An apparatus includes a substrate having a land side having a plurality of contact pads and a die side opposite the land side. The apparatus includes a first die and a second die wherein the first die and second die are embedded within the substrate such that the second die is located between the first die and the land side of the substrate.

Abstract: A printed circuit board (PCB) structure with a heat dissipation function is provided, including: a package substrate; a landing pad formed over a portion of the package substrate from a first surface thereof, wherein the landing pad has a rectangular configuration and has a plurality of corners; a plurality of ground traces formed over various portions of the package substrate, physically connecting to the bond pad from at least two of the corners thereof, respectively; a first through hole formed through the landing pad and the package substrate from substantially a center portion of the bonding pad; and a plurality of second through holes formed through the landing pad and the package substrate from substantially one of the corners of the bonding pad, wherein the second through holes are adjacent to the ground traces, respectively.

Abstract: A carrier structure is provided, which includes: a metal oxide plate having opposite first and second surfaces and a plurality of through holes penetrating the first and second surfaces; a plurality of conductive portions formed in the through holes, respectively; and a plurality of conductive pads formed on the first surface of the metal oxide plate, wherein each of the conductive pads is correspondingly positioned on and in contact with a plurality of the conductive portions so as to be electrically connected to the plurality of the conductive portions. By replacing a conventional silicon interposer with the metal oxide plate, the present invention eliminates the need to form through silicon vias as required in the prior art and therefore simplifies the fabrication process.

Abstract: Die (110) and/or undiced wafers and/or multichip modules (MCMs) are attached on top of an interposer (120) or some other structure (e.g. another integrated circuit) and are covered by an encapsulant (160). Then the interposer is thinned from below. Before encapsulation, a layer (410) more rigid than the encapsulant is formed on the interposer around the die to reduce or eliminate interposer dishing between the die when the interposer is thinned by a mechanical process (e.g. CMP). Other features are also provided.

Abstract: A semiconductor device includes a semiconductor substrate including a first surface in which an integrated circuit and an I/O pad electrically connected to the integrated circuit are formed, and a second surface which is an opposite side to the first surface, where a two-stage through-hole is formed in the semiconductor substrate, the semiconductor substrate including a first shape portion having a tapered shape which has a wall surface and of which a diameter of an opening becomes smaller toward a bottom of the hole from the second surface side to a predetermined position of the semiconductor substrate in a thickness direction, and including a second shape portion having a cylindrical shape which extends from the first shape portion to the I/O pad on the first surface side, and that includes an inorganic insulating film which is formed on the wall surface of the two-stage through-hole and the second surface.

Abstract: Embodiments of a flexibly-wrapped integrated circuit die device and a method for mounting a flexibly-wrapped integrated circuit die to a substrate are disclosed. In some embodiments, the flexibly-wrapped integrated circuit die device includes a substrate and a flexible integrated circuit die coupled to the substrate in a substantially vertical orientation with reference to a surface of the substrate.

Abstract: Semiconductor device packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region and a molding material disposed around the integrated circuit die mounting region. An interconnect structure is disposed over the molding material and the integrated circuit die mounting region. A protection pattern is disposed in a perimeter region of the package. The protection pattern includes a conductive feature.

Abstract: A semiconductor package including an antenna formed integrally therewith. The semiconductor package includes: a semiconductor chip; a sealing part sealing the semiconductor chip; a substrate part formed on at least one surface of the sealing part; and an antenna part formed on the sealing part and electrically connected to the semiconductor chip.

Abstract: A semiconductor device includes a semiconductor chip having a front electrode and a rear electrode; a conductive plate having a main surface connected to the rear electrode of the semiconductor chip; an insulating plate fixed to a surface of the conductive plate opposite to the main surface; and a ceramic case having first and second terminals buried therein, a cavity accommodating the semiconductor chip, the conductive plate, and the insulating plate, and an electrode surface opposite to an opening portion of the cavity. The first terminal has one end connected to the front electrode of the semiconductor chip, and another end exposed from the electrode surface. The second terminal has one end connected to the main surface of the conductive plate, and another end exposed from the electrode surface. The ceramic case and the insulating plate form a housing.

Abstract: A thermal interface material includes a metal foil, which has a first surface and an opposite second surface, and a plurality of rod conductors each having a side surface extending in a thickness direction of the metal foil. The rod conductors are arranged on at least one of the first and second surfaces of the metal foil in a planar direction that is perpendicular to the thickness direction. A resin layer covers at least the first surface and the second surface of the metal foil and the side surfaces of the rod conductors.

Abstract: A lightweight, low volume, high performance LADAR sensor incorporating 3-D focal plane arrays is adapted specifically for terrain mapping. The present invention generates, at high speed, 3-D topographical, water surface, floating object, bathymetric, biological gas cloud, poison gas cloud, or smoke stack emission mapping data. The 3-D focal planes are used in a variety of physical configurations which provide advantages over prior art terrain mapping LADAR sensors.

Abstract: A seal ring structure of an integrated circuit includes a seal ring and a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes a top electrode, a bottom electrode disposed below the top electrode, and a first insulating layer disposed between the top electrode and the bottom electrode. The MIM capacitor is disposed within the seal ring and the MIM capacitor is insulated from the seal ring.

Abstract: A package includes a semiconductor chip. The semiconductor chip includes a substrate, a plurality of dielectric layers underlying the substrate, a dielectric region penetrating through the plurality of dielectric layers, and a metal pad overlapped by the dielectric region. A conductive plug penetrates through the substrate, the dielectric region, and the metal pad.

Abstract: An integrated circuit package includes a ball arrangement that includes transmitter contact pairs arranged in a first portion of a ball grid array disposed in the integrated circuit package. Each of the transmitter contact pairs include transmitter differential signal contacts. Pairs of the transmitter contact pairs located adjacent to one another are in a staggered arrangement. The ball arrangement also includes receiver contact pairs arranged in a second portion of the ball grid array. Each of the receiver contact pairs include receiver differential signal contacts. Pairs of the receiver contact pairs located adjacent to one another are in a staggered arrangement. The ball arrangement also includes voltage supply contacts arranged at least between every two pairs of the transmitter contact pairs and the receiver contact pairs.

Abstract: A wiring board includes a resin substrate in which reinforcement members are arranged horizontally, a through electrode filled in a through hole penetrating the substrate in a thickness direction, and wiring layers respectively formed on both surfaces of the substrate and electrically connected to each other via the through electrode. The reinforcement members are arranged such that reinforcement members arranged in a middle region of the substrate in the thickness direction has higher density than reinforcement members arranged in the regions other than the middle region of the substrate.

Abstract: A circuit arrangement includes a substrate, an integrated circuit (IC) component attached to the substrate, and one or more round wire segments attached to the substrate. The one or more round wire segments have first and second portions for connecting to the IC component, and each first and second portion has a planar landing area extending longitudinally along the wire. The circuit arrangement further includes bond wires connecting the landing areas to the IC component.

Abstract: Disclosed are apparatus and methods related to conformal coating of radio-frequency (RF) modules. In some embodiments, a module can include an overmold formed over an RF component mounted on a packaging substrate. The overmold can also cover a surface-mount device (SMD) such as an RF filter implemented as a chip size surface acoustic wave (SAW) device (CSSD). The module can further include a conductive layer formed over the overmold and configured to provide RF shielding functionality for the module. The conductive layer can be electrically connected to a ground plane of the packaging substrate through the SMD. An opening can be formed in the overmold over the SMD; and the conductive layer can conform to the opening to electrically connect the conductive layer with an upper surface of the SMD and thereby facilitate the grounding connection.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A carrier and a dam element are provided, and the dam element is adhered to the carrier by a temporary bonding layer. The dam element is bonded on the wafer. A first isolation layer, a redistribution layer, a second isolation layer, and a conductive structure are formed on the wafer in sequence. The carrier, the dam element and the wafer are diced to form a semiconductor element. The semiconductor element is disposed on a printed circuit board, such that the conductive structure is electrically connected to the printed circuit board. An adhesion force of the temporary bonding layer is eliminated to remove the carrier. A lens assembly is disposed on the printed circuit board, such that the semiconductor element without the carrier is located in the lens assembly.

Abstract: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction.

Abstract: Power modules with reduced parasitic inductances are provided. A power module includes a first substrate including a first electrically-conductive layer and a second substrate including a second electrically-conductive layer. These substrates may be stacked on each other. A scalable network of power switches may be arranged on the substrates. Power bars may be connectable to the electrically-conductive layers through electromechanical interfaces at selectable interface locations. The locations and/or type of interface may be selectable based on the arrangement of the switches. The first and second electrically-conductive layers may be disposed on mutually opposed surfaces of a dielectric layer having a thickness chosen to effect a level of coupling between respective source and return current paths provided by the electrically-conductive layers.

Abstract: A packaging carrier includes an interposer, a dielectric layer and a built-up structure. The interposer has a first surface and a second surface opposite to each other, and a plurality of first pads and second pads located on the first surface and the second surface, respectively. The dielectric layer has a third surface and a fourth surface opposite to each other. The interposer is embedded in the dielectric layer. The second surface of the interposer is not covered by the fourth surface of the dielectric layer, and has a height difference with the fourth surface. The built-up structure is disposed on the third surface of the dielectric layer and electrically connected to the first pads of the interposer.

Abstract: Some implementations provide an integrated device that includes a capacitor and an inductor. The inductor is electrically coupled to the capacitor. The inductor and the capacitor are configured to operate as a filter for an electrical signal in the integrated device. The inductor includes a first metal layer of a printed circuit board (PCB), a set of solder balls coupled to the PCB, and a second metal layer in a die. In some implementations, the capacitor is located in the die. In some implementations, the capacitor is a surface mounted passive device on the PCB. In some implementations, the first metal layer is a trace on the PCB. In some implementations, the inductor includes a third metal layer in the die. In some implementations, the second metal layer is an under bump metallization (UBM) layer of the die, and the third metal is a redistribution layer of the die.

Abstract: There is provided a method for manufacturing an electronic component package. The method includes the steps: (i) disposing a metal pattern layer on an adhesive carrier; (ii) placing at least one kind of electronic component on the adhesive carrier, the placed electronic component being not overlapped with respect to the metal pattern layer; (iii) forming a sealing resin layer on the adhesive carrier, and thereby producing a precursor of the electronic component package; (iv) peeling off the adhesive carrier of the precursor, whereby the metal pattern layer and an electrode of the electronic component are exposed at the surface of the sealing resin layer; and (v) forming a metal plating layer such that the metal plating layer is in contact with the exposed surface of the metal pattern layer and the exposed surface of the electrode of the electronic component.

Abstract: This publication discloses an electronic module and a method for manufacturing an electronic module, in which a component is glued to the surface of a conductive layer, from which conductive layer conductive patterns are later formed. After gluing the component, an insulating-material layer, which surrounds the component attached to the conductive layer, is formed on, or attached to the surface of the conductive layer. After the gluing of the component, feed-throughs are also made, through which electrical contacts can be made between the conductive layer and the contact zones of the component. After this, conductive patterns are made from the conductive layer, to the surface of which the component is glued.

Abstract: Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method includes producing a plurality of vertically-elongated contacts in ohmic contact with interconnect lines contained within one or more redistribution layers built over the frontside of a semiconductor die. A molded radiofrequency (RF) separation or stand-off layer is formed over the redistribution layers through which the plurality of vertically-elongated contacts extend. An antenna structure is fabricated or otherwise provided over the molded RF stand-off layer and electrically coupled to the semiconductor die through at least one of the plurality of vertically-elongated contacts.

Abstract: An apparatus includes a dielectric slab having first and opposing second major surfaces. A planar antenna element is located on the first major surface. A via formed through the dielectric slab is conductively connected to the antenna element. A plurality of solder bump pads is located on the second major surface and is configured to attach the dielectric slab to an integrated circuit.

Abstract: Disclosed herein is a device comprising a first redistribution layer (RDL) having first lands disposed on a bottom surface of the first RDL and active contact pads disposed on a top surface of the first RDL. The first RDL electrically connects the first lands to the active contact pads. A molding compound layer is disposed on the top surface of the first RDL. Active vias extend through the molding compound layer and are in electrical contact with the active contact pads. Dummy vias extending through the molding compound layer. Top surfaces of the active vias and top surfaces of the dummy vias are substantially planar with a top surface of the molding compound layer, and the dummy vias are electrically insulated from the active vias and the first lands.

Abstract: A method for fabricating a semiconductor device provides a first chip having first terminals, a second chip having second terminals, and a third chip having third terminals. A first silicon interposer having first through silicon vias TSVs and a second silicon interposer having second TSVs is provided. The first TSVs are arrayed in a first, a second, and a third set. The first set is located in a first interposer region and matching the first terminals. The second set is located in a second interposer region and matching the second terminals. The third set is located in a third interposer region between the first and second regions and matching the TSVs of the second interposer and the third terminals. The first chip is aligned with the first set TSVs. The second chip is aligned with the second set TSVs. The second interposer is aligned with the third set TSVs. A solder of a first melting temperature is used.

Abstract: An electronic device and an electronic component thereof include a main body and several pins. One side of the main body has several recesses. Each of the recesses has a first inner width along a first direction. The first direction is substantially parallel to a long side of the main body. The pins are respectively inserted into the recesses. Each of the pins has a first outer width along the first direction. The first outer width is smaller than the first inner width.

Abstract: Arylcyclobutene polymers having improved toughness are provided. Compositions and methods for coating arylcyclobutene polymers having improved toughness are also provided.

Abstract: A wired circuit board includes a metal supporting layer, a first insulating layer, a conductive layer, a second insulating layer, and a ground layer. The first opening of the first insulating layer is surrounded by the second opening of the second insulating layer when projected in the thickness direction, and the ground layer fills the first opening via the second opening so as to come in contact with an upper surface of the metal supporting layer. Alternatively, the first opening surrounds the second opening when projected in the thickness direction, the second insulating layer fills a peripheral end portion of the first opening, and the ground layer fills the second opening so as to come in contact with the upper surface of the metal supporting layer.

Abstract: A chip includes a semiconductor substrate, integrated circuits with at least portions in the semiconductor substrate, and a surface dielectric layer over the integrated circuits. A plurality of metal pads is distributed substantially uniformly throughout substantially an entirety of a surface of the chip. The plurality of metal pads has top surfaces level with a top surface of the surface dielectric layer. The plurality of metal pads includes active metal pads and dummy metal pads. The active metal pads are electrically coupled to the integrated circuits. The dummy metal pads are electrically decoupled from the integrated circuits.

Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.

Abstract: In accordance with an embodiment, there is provided a substrate of a ball grid array package that includes a first layer including reinforcement fibers. The reinforcement fibers reinforce the first layer such that the first layer has a higher tensile strength relative to a layer in the ball grid array package that is free of reinforcement fibers. In an embodiment, the substrate comprises a second layer disposed adjacent to the first layer with the second layer being free of reinforcement fibers. In an embodiment, the substrate also includes a through hole penetrating each of the first layer and the second layer. The through hole penetrates each of the first layer and the second layer based on each of the first layer and the second layer having been drilled in accordance with a mechanical drilling process.