Abstract: A microelectronic package includes a mounting structure, a microelectronic element associated with the mounting structure, and a plurality of conductive posts physically connected to the mounting structure and electrically connected to the microelectronic element. The conductive posts project from the mounting structure in an upward direction, at least one of the conductive posts being an offset post. Each offset post has a base connected to the mounting structure, the base of each offset post defining a centroid. Each offset post also defines an upper extremity having a centroid, the centroid of the upper extremity being offset from the centroid of the base in a horizontal offset direction transverse to the upward direction. The mounting structure is adapted to permit tilting of each offset post about a horizontal axis so that the upper extremities may wipe across a contact pad of an opposing circuit board.

Abstract: Provided is a ceramic package for headlamp, and a headlamp module having the same. The ceramic package for headlamp includes a body part, a pair of internal electrodes, and an electrode exposing part. The body part has a cavity formed therein. The cavity is upwardly opened to expose a light emitting diode mounted on a mounting part. The pair of internal electrodes in the body part is electrically connected to the light emitting diode. The electrode exposing part is stepped at either side of the body part to upwardly expose the internal electrode to the outside.

Abstract: A light emitting diode (LED) module has a hexagonal substrate and at least one LED mounted on the substrate. The substrate may have three terminal sets and three sockets. Each terminal set of one LED module has a positive terminal and a negative terminal plugged respectively to a positive jack and a negative jack of each socket of the other LED module. The substrate may have six terminal sets. Each terminal set of one LED module has a positive terminal and a negative terminal respectively connected to the positive and negative terminals of each set of the other LED module through connectors. The LED modules are connected in parallel and the hexagonal substrate allows the LED modules to be arranged in different patterns according to variable products. Moreover, replacing the LED module with a new one is easy, low cost and saves resources.

Abstract: A chip adapter used to install a chip on a first chip arranging area of a circuit board includes a board. The size of the board has the same size as the first chip arranging area of the circuit board. Edges of the chip adapter define a number of gaps corresponding to first pads of the circuit board. A second chip arranging area of the same size as the chip is arranged in a center of the chip adapter. A number of second pads are arranged around the second chip arranging area of the chip adapter corresponding to pins of the chip. Each second pad is electrically connected to a sidewall of the corresponding gap of the chip adapter.

Abstract: A lead frame includes a plurality of leads electrically connected to a semiconductor chip and a lead lock including a base layer disposed over the plurality of the leads and formed of a material having a coefficient of thermal expansion similar to that of inner leads. An adhesive layer is disposed between the base layer and the plurality of leads to fix the plurality of leads and adhere the base layer to the leads. At least one line electrically connects the semiconductor chip to the base layer of the lead lock. Since regions for bus bars are replaced by the lead lock and are removed, the lead frame can be miniaturized and has superior thermal stability and dimension stability.

Abstract: Provided is an electrode pad for mounting an electronic component on a surface of a circuit board. The electrode pad includes first and second electrode parts facing each other, and third and fourth electrode parts facing each other. The third and fourth electrode parts are disposed adjacent to the first and second electrode parts for forming corners of the electrode pad together with the first and second electrode parts. At least one of the first to fourth electrode parts includes a chamfered surface formed by cutting a corner of the at least one of the first to fourth electrode parts forming the corner of the electrode pad. Therefore, when the electrode pad is used for mounting an electronic component, the width of an outer electrode of the electronic component can be sufficiently increased, and thus the shape or size of the outer electrode can be easily adjusted.

Abstract: The present invention provides an array type chip resistor including: a substrate formed in a rectangular parallelepiped shape; lower electrodes disposed on both sides of a bottom surface of the substrate at equal spaces; side electrodes extended from some of lower electrodes, formed on outermost edges of both sides of the substrate, in all lower electrodes, to a side surface of the substrate; a resistive element interposed between lower electrodes of the bottom surface of the substrate; a protection layer covered on the resistive element, the protection layer having both sides which cover a part of the lower electrodes and the resistive element; leveling electrodes being in contact with the lower electrodes exposed to outside of the protection layer; and a plating layer formed on the leveling electrodes.

Abstract: A semiconductor device comprising a signal transmission line of a microstrip structure, capable of increasing the characteristic impedance of the signal transmission line and reducing coupling between a plurality of signal lines. In a signal transmission line of a microstrip structure composed of a signal line and a ground plate, the capacitance between wires is reduced and the characteristic impedance can be increased by forming holes in the signal line or in the ground plate. The coupling between a plurality of signal lines can also be reduced.

Abstract: A chip-mounted film package includes a base film, an effective film package defined on the base film by a cutting line, a driving chip mounted on the effective film package, a plurality of input pads arranged on an input area of the effective film package and connected to the driving chip, and a plurality of output pads arranged on an output area of the effective film package and connected to the driving chip, wherein the output area includes at least one extended portion that protrudes from a side of the effective film package in a horizontal direction of the base film.

Abstract: A semiconductor device in which a plurality of semiconductor chips is stacked. A first semiconductor chip is stacked in a region, on a second semiconductor chip, in which a circuit that generates noise is not disposed within said second semiconductor chip, and a wire of a circuit that easily receives noise within said first semiconductor chip is disposed so as not to extend over said circuit that generates noise.

Abstract: Methods for forming an edge contact on a die and edge contact structures are described. The edge contacts on the die do not increase the height of the die. The edge contacts are positioned on the periphery of a die. The edge contacts are positioned in the saw streets. Each edge contact is connected to one bond pad of each die adjacent the saw street. The edge contact is divided into contacts for each adjacent die when the dies are separated. In an embodiment, a recess is formed in the saw street. In an embodiment, the recess is formed by scribing the saw street with a mechanical cutter. The recess is patterned and contact material is deposited to form the edge contacts.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming an elevated contact above and between a lead and a die pad that is coplanar with the lead; connecting an integrated circuit and the lead; attaching a jumper interconnect between the elevated contact and the lead; and forming an encapsulant over the integrated circuit, the lead, the die pad, the elevated contact, and the jumper interconnect, the encapsulant having a recess in a base side with the elevated contact exposed in the recess and the lead exposed from the base side.

Abstract: An integrated circuit package system includes: connecting a concave terminal and an integrated circuit; and forming an encapsulation, having a bottom side, over the integrated circuit and the concave terminal with the concave terminal within the encapsulation.

Abstract: A chip arrangement includes semiconductor chips coupled to opposing sides of an insulating layer. The arrangement includes a first semiconductor chip having a first chip surface presenting a first chip conductive region. An electrically insulating layer includes a first layer surface presenting a first layer conductive region, and a second, opposing surface presenting a second layer conductive region. The electrically insulating layer is coupled to the first semiconductor chip by applying the first layer conductive region to the first chip conductive region. The electrically insulating layer is then coupled to the second chip conductive region by applying the second layer conductive region to the second chip conductive region.

Abstract: An integrated circuit package system includes: forming a die-attach paddle, a terminal pad, and an external interconnect with the external interconnect below the terminal pad; connecting an integrated circuit die with the terminal pad and the external interconnect; and forming an encapsulation, having a first side and a second side at an opposing side to the first side, surrounding the integrated circuit die with the terminal pad exposed at the first side and the external interconnect extending below the second side.

Abstract: Chip-scale packages and assemblies thereof are disclosed. The chip-scale package includes a core member of a metal or alloy having a recess for at least partially receiving a die therein and includes at least one flange member partially folded over another portion of the core member. Conductive traces extend from one side of the package over the at least one flange member to an opposing side of the package. Systems including the chip-scale packages and assemblies are also disclosed.

Abstract: A capacitive interposer, electronic package having the capacitive interposer and electronic device with the electronic package is described. The interposer has a first planar face and a second planar face. An array of upper connections is on the first planar face and opposing lower connections are on the second planar face with conduction paths between each upper connection of the upper connections and a lower connection of the lower connections. At least one power feed-through capacitor is provided. The capacitor has a plurality of parallel plates with a dielectric there between. At least one first external termination is in electrical contact with a first set of alternate parallel plates and at least one second external termination is in electrical contact with a second set of alternate parallel plates.

Abstract: The electric component includes at least a set of electrode terminals 2, 3, a semiconductor element 4 electrically connected with the set of electrode terminals, and a package 6 made of synthetic resin and sealing the electrode terminals and the semiconductor element with part of a lower surface of each of the electrode terminals exposed at a lower surface of the package. A cover layer 11 made of synthetic resin is formed to cover a cut surface of a tip of a connector lead remainder extending integrally outward from the each of the electrode terminals. Thus, disadvantages resulting from exposure of the cut surface of the tip of the connector lead remainder are eliminated.

Abstract: An electronic component has an element body, and a plurality of external electrodes formed on one principal face of the element body. Each external electrode has a first electrode layer joined to the one principal face of the element body, and a second electrode layer joined as laid on an inside region inside an edge of the first electrode layer. An apical surface of the second electrode layer is planar. A joint portion in the second electrode layer to the first electrode layer is rounded.

Abstract: A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive through hole vias (THV) are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV.

Abstract: In one embodiment, an integrated circuit device includes an active area encompassed by a seal ring. The seal ring may include a deep moat formed on an outer edge of the seal ring. The deep moat may have a depth that extends substantially to the substrate to prevent cracks from propagating into the active area. Alternatively or in addition, the seal ring may include redundant vias.

Abstract: A semiconductor package and methods for manufacturing the same are provided. The semiconductor package includes a substrate, first and second semiconductor chips stacked on the substrate. An interposer is disposed between the first and second semiconductor chips. The interposer has a non-planar top surface.

Abstract: A non-leaded integrated circuits package system is provided including etching differential height lead structures having inner leads at a paddle height, providing mold locks at the bending points of the differential height lead structures, etching an elevated paddle at a same height as the inner leads, mounting a first integrated circuit on the elevated paddle, and electrically connecting first electrical interconnects between the first integrated circuit and the inner leads.

Abstract: A microelectronic chip comprises two parallel main faces and side faces. At least one of the faces comprises a recess provided with at least one electrical connection element and forming a housing for a wire element. The wire element simultaneously constitutes both an electrical connection between the chip and the outside via said connection element and a flexible mechanical support for said chip.

Abstract: In an embodiment, the invention provides a LFCC package comprising first, second and third lead frames, a light source, and an encapsulant. The first lead frame comprises two tongues and a reflector cup. The first, second and third lead frames are attached to the encapsulant. The light source is mounted at the bottom of the inside of the reflector cup. The light source is electrically connected to the second and third lead frames by wire bonds. The reflector cup is surrounded on at least four sides by the encapsulant, the encapsulant being an integral single piece structure.

Abstract: An integrated circuit package comprises a package substrate (210, 410), an electrically insulating material (220, 420) adjacent to the package substrate, and a mark (230, 420) on the electrically insulating material. The mark is such that a visual contrast between the mark and the electrically insulating material is maximized when the mark and the electrically insulating material are exposed to coaxial illumination. In one embodiment the electrically insulating material over the package substrate has a first surface roughness and a mark on the solder resist material has a second surface roughness that is no more than approximately twenty times greater than the first surface roughness.

Abstract: A semiconductor package includes: a semiconductor substrate; an inner insulator layer formed on the substrate; at least one internal wiring extending from a front side of the substrate along one of lateral sides of the substrate to a rear side of the substrate; a first outer insulator layer disposed at the front side of the substrate, formed on the internal wiring, and formed with at least one wire-connecting hole; and a second outer insulator layer disposed at the rear side of the substrate, formed on the internal wiring, and formed with at least one wire-connecting hole which exposes a portion of the internal wiring.

Abstract: A semiconductor device including: a die pad, a die on the die pad, and resin encapsulating the die and forming an isolation thickness over the die pad, the resin including a mounting aperture and a major surface configured for mounting to an external device, the major surface having a non warpage compensation portion adjacent the die and a warpage compensation portion in a relatively thermally inactive zone with an approximate discontinuity and/or abrupt change in gradient between the non warpage compensation portion and the warpage compensation portion.

Abstract: A nanophotonic device. The device includes a substrate, at least one light emitting structure and at least one electronic component. The at least one light emitting structure is capable of transmitting light and is monolithically integrated on the substrate. The at least one electronic component is monolithically integrated on the substrate. A method for fabricating nanophotonic devices is also described.

Abstract: A semiconductor device has a plurality of similar sized semiconductor die each with a plurality of bond pads formed over a surface of the semiconductor die. An insulating layer is formed around a periphery of each semiconductor die. A plurality of conductive THVs is formed through the insulating layer. A plurality of conductive traces is formed over the surface of the semiconductor die electrically connected between the bond pads and conductive THVs. The semiconductor die are stacked to electrically connect the conductive THVs between adjacent semiconductor die. The stacked semiconductor die are mounted within an integrated cavity of a substrate or leadframe structure. An encapsulant is deposited over the substrate or leadframe structure and the semiconductor die. A thermally conductive lid is formed over a surface of the substrate or leadframe structure. The stacked semiconductor die are attached to the thermally conductive lid.

Abstract: An integrated circuit (IC) package includes a printed circuit board (PCB) substrate and a plurality of package attachment terminals. The package attachment terminals are used to conduct electrical signals from a die that is attached and bonded onto the PCB substrate. The PCB substrate has a side edge and includes a plurality of electrically-conductive paths. Each one of the plurality of paths includes an electroplated bond pad, a trace, and a stub trace. The die is connected to the bond pad and the trace couples the bond pad to a respective one of the package attachment terminals. The stub trace is used to facilitate the electroplating process. The stub trace extends from the trace and terminates at a distance away from the side edge. The stub trace is not visible from the side of the IC package and therefore prevents access to IC buses on the package.

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Abstract: An electrical interconnect assembly for electrically interconnecting terminals on a first circuit member with terminals on a second circuit member. The electrical interconnect includes a housing having a plurality of through openings extending between a first surface and a second surface. A plurality of composite contacts are positioned in a plurality of the through openings. The composite contacts include a conductive member having a central portion and at least first and second interface portions. One or more polymeric layers extend along at least the central portion conductive member. One or more coupling features on the composite contacts engage with the housing. At least one engagement feature formed in the polymeric layers proximate the first interface portion mechanically couples with the terminals on the first circuit member.

Abstract: A reconstituted electronic device including: a first face and a second face; a plurality of individual chips placed perpendicular to the faces, each individual chip carrying, on one of its surfaces, at least one component, tracks, and a connection mechanism that are flush with one or other of the faces of the reconstituted electronic device; and an encapsulant that encapsulates the individual chips.

Abstract: A substrate for a semiconductor package having a reinforcing member that prevents or minimizes distortions is presented. The substrate for the semiconductor package includes a substrate body, an insulation layer, and a reinforcing member. The substrate body has a first region having a plurality of chip mount regions, a second region disposed along a periphery of the first region, a circuit pattern disposed in each chip mount region and a dummy pattern disposed along the second region. The insulation layer covers the first and second regions and has an opening exposing some portion of each circuit pattern. The reinforcing member is disposed in the second region and prevents deflection of the substrate body.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a lead frame having contact pads and connection leads; coupling a base integrated circuit to the contact pads; coupling a chip interconnect between the base integrated circuit, the connection leads, the contact pads, or a combination thereof; molding a package body on the connection leads, the base integrated circuit, and the chip interconnects, including having the contact pads exposed; and forming a bottom surface on the package body including forming the connection leads to be coplanar with the bottom surface.

Abstract: A semiconductor wafer 10 has a plurality of semiconductor chip areas 10a and a scribe area 10b, each of the semiconductor chip areas 10a having semiconductor elements and electrode pads (electrode portions) 16a electrically connected to the respective semiconductor elements, the scribe area 10b having monitor elements and electrode pads (electrode portions) 16b electrically connected to the monitor elements, wherein projecting electrodes 18 are selectively formed only on the respective electrode pads 16a in the semiconductor chip areas 10a by electroless plating. Thus, for example, the electrode pads 16b are covered with an insulating film 14.

Abstract: A method of manufacture of a base package system includes: forming a substrate strip assembly including: providing a substrate strip having ball lands, mounting an integrated circuit on the substrate strip, and molding a finger structure, having a knuckle region, on the integrated circuit; and singulating a substrate from the substrate strip assembly.

Abstract: A semiconductor process is provided. First, a silicon base is provided. Next, a surface of the silicon base is partially exposed and at least a stair structure is formed on the silicon base by etching the surface of the silicon base. The stair structure has a first notch with a first depth and a second notch with a second depth. The first depth is smaller than the second depth, and a diameter of the first notch is larger than a diameter of the second notch. A final insulating layer and a metal seed layer are sequentially formed on the stair structure. A patterned photoresist layer is formed on the metal seed layer. A circuit layer coving exposed portions of the metal seed layer located above the first notch is formed. The patterned photoresist layer and portions of the metal seed layer disposed below the patterned photoresist layer are then removed.

Abstract: A silicon condenser microphone package and method for manufacture are disclosed. The silicon condenser microphone package includes a silicon condenser microphone die, a substrate comprising a conductive layer, and a cover having a conductive layer, where the conductive layers of the substrate and cover are electrically connected to form an electromagnetic interference shield for the silicon condenser microphone die. The method for manufacturing the silicon condenser microphone package involves placement of a plurality of silicon condenser microphone dies on a panel of printed circuit board material, placement of covers over each of the silicon condenser microphone dies, and then separating the panel into individual packages.

Abstract: A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.

Abstract: A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.

Abstract: A method and device for one or more dimensional input control of different functions in electronic devices is provided. Certain versions of the Present Invention provide a one or more dimensional input force interface control device for cell phones, portable gamers, digital cameras, and other applications. Certain alternate versions of the Present Invention exhibit one or more of the qualities of smallness, low-cost, high reliability, and/or high stability. Certain still alternate versions of the Present Invention provide a three, two or one-dimensional input finger force control device that (1.) accommodates a required ratio between X, Y and Z sensitivities, (2.) has low cross-axis sensitivity, (3.) allows process integration with other sensors and CMOS, (4.) is scalable, (5.) allows convenient solutions for applying an external force, and/or (6.) allows economic manufacturability for high volume consumer markets.

Abstract: A semiconductor chip package includes a signal interconnection penetrating a semiconductor chip and transmitting a signal to the semiconductor chip and a power interconnection and a ground interconnection penetrating the semiconductor and supplying power and ground to the semiconductor chip. The power interconnection and the ground interconnection are arranged to neighbor each other adjacent to the signal interconnection.

Abstract: An optical semiconductor device includes: an optical semiconductor element including a light-emitting layer formed on a first principal surface, a first electrode formed on the light-emitting layer and having a smaller size than the first principal surface, and a second electrode formed on a second principal surface different from the first principal surface; a first lead portion including a bonding region to which the first electrode is bonded and which has a smaller size than the first principal surface, and a first groove portion formed on an outer peripheral region adjacent to the bonding region, the first lead portion being electrically connected to the first electrode bonded to the bonding region by use of a bonding member; and a second lead portion electrically connected to the second electrode by use of a connecting member.

Abstract: According to one embodiment, a power transistor package includes an electrically conductive flange configured to be connected to a source of a power transistor device. The package further includes a first terminal mechanically fastened to the flange and configured to be electrically connected to a gate of the power transistor device and a second terminal mechanically fastened to the flange and configured to be electrically connected to a drain of the power transistor device. The package also includes a bus bar mechanically fastened to the flange which extends between and connects at least two different DC bias terminals mechanically fastened to the flange. The bus bar is configured to be electrically connected to the drain via one or more RF grounded connections.

Abstract: A package structure and a manufacturing method thereof are provided. The package structure includes a substrate, a chip and a packing material layer. The substrate has a top surface and a lateral surface. The top surface is connected with the lateral surface. The chip is disposed on the top surface. The packing material layer comprises a body portion and an extending portion. The body portion covers at least a part of the chip and the substrate. The extending portion is connected with the body portion and covers at least a part of the substrate. The extending portion is projected to the lateral surface and made from a transparent material.

Abstract: An improved MEMS device and method of making. Channels are formed in a first substrate around a plurality of MEMS device areas previously formed on the first substrate. Then, a plurality of seal rings are applied around the plurality of MEMS device areas and over at least a portion of the formed channels. A second substrate is attached to the first substrate, then the seal ring surrounded MEMS device areas are separated from each other. The channels include first and second cross-sectional areas. The first cross-sectional area is sized to keep saw debris particles from entering the MEMS device area.

Abstract: Provided is a memory module. The memory module may include a mounting substrate including a plurality of first substrate pads disposed on a top surface of the mounting substrate, a first semiconductor package disposed on a top surface of the mounting substrate, the first semiconductor package having a first frame and first external connection terminals which extend through the outside of the first frame and are disposed on the first substrate pads, a first connection member including first connection terminals disposed between the first external connection terminals and the first substrate pads and a pressure fixing member compressing the first connection member to electrically connect the first external connection terminals and the first substrate pads by the medium of the first connection terminals.

Abstract: A ball grid array (BGA) package includes a substrate layer having first and second sides. A semiconductor chip is attached to the first side of the substrate layer by a dielectric adhesive layer. A plurality of solder balls are attached to the second side of the substrate layer. The solder balls may be set out by rows and columns. A plurality of wires electrically connect the semiconductor chip to the solder balls. A layer of encapsulating compound is deposited over the semiconductor chip. A step cavity of a selected depth and shape is formed in the layer of encapsulating compound at or near the edge or periphery of the layer of encapsulating compound. The step cavity is separated from the solder balls by the substrate layer but spans over a plurality of selected solder balls.