Abstract: According to one embodiment, a semiconductor memory device includes conductive layers stacked at intervals and extending from a memory cell array region to a contact region. The contact region includes a staircase contact region and a staircase connection region. The staircase contact region includes a descending step contact region with steps descending in a first direction away from the memory cell array region and an ascending step contact region with steps ascending in the first direction, and the descending step contact region and the ascending step contact region include terrace faces provided with respective contacts connected thereto. The staircase connection region includes conductive layers formed of layers same as conductive layers connected to the contacts of the ascending step contact region.

Abstract: A flexible display and manufacturing method thereof are disclosed. In one aspect, the flexible display includes a flexible substrate including a bending area, an insulating layer disposed on the flexible substrate, and at least one groove in the insulating layer within the bending area. The flexible display also includes a stress relaxation layer disposed on the at least one groove and a plurality of wires formed over the insulating layer and the stress relaxation layer.

Abstract: Provided are a package and a method of manufacturing the same. The package includes a first die, a second die, a bridge structure, an encapsulant, and a redistribution layer (RDL) structure. The first die and the second die are disposed side by side. The bridge structure is disposed over the first die and the second die to electrically connect the first die and the second die. The encapsulant laterally encapsulates the first die, the second die, and the bridge structure. The RDL structure is disposed over a backside of the bridge structure and the encapsulant. The RDL structure includes an insulating structure and a conductive pattern, the conductive pattern is disposed over the insulating structure and extending through the insulating structure and a substrate of the bridge structure, so as to form at least one through via in the substrate of the bridge structure.

Abstract: A semiconductor device includes a first conductive pattern having a first line portion extending in a first direction and a first bending portion that extends from the first line portion. A closed area, surrounded by the first line portion and the first bending portion, is defined at one side of the first line portion. The semiconductor device further includes a second conductive pattern disposed in the closed area, the second conductive pattern being spaced apart from the first conductive pattern.

Abstract: A package structure including a first circuit board structure, a redistribution layer structure, bonding elements, and a semiconductor package is provided. The redistribution layer structure is disposed over and electrically connected to the first circuit board structure. The bonding elements are disposed between and electrically connected to the redistribution layer structure and the first circuit board structure. Each of the bonding elements has a core portion and a shell portion surrounding the core portion. A stiffness of the core portion is higher than a stiffness of the shell portion. A semiconductor package is disposed over and electrically connected to the redistribution layer structure.

Abstract: According to one embodiment, a semiconductor memory device includes first and second conductor layers, a first pillar, a first contact, and a source line drive circuit. The first pillar is passing through the second conductor layers. The first pillar includes a first semiconductor layer and a second insulator layer. The first semiconductor layer includes a side surface partially in contact with the first conductor layer. The first contact is passing through the second conductor layers. The first contact includes a third conductor layer and a third insulator layer. The third conductor layer includes a side surface partially in contact with the first conductor layer. The source line drive circuit is electrically coupled to the first conductor layer via the first contact.

Abstract: The present disclosure discloses a display substrate and a display device. The package structure of the display component includes: a base substrate, a display component arranged on a surface of the base substrate, and a package layer covering the display component, in which the display component includes a display area and a peripheral area surrounding the display area, and the peripheral area is provided with a signal line pattern having an inclined side along a direction perpendicular to an extending direction of the signal line pattern with a slope angle of less than 90 degrees.

Abstract: A semiconductor device includes a substrate, having a silicon layer on top. A device structure is disposed on the substrate. A dielectric layer is disposed on the substrate and covering over the device structure. The dielectric layer has a first air gap above the device structure. The first air gap is enclosed by a dielectric wall constituting as a part of the dielectric layer and the dielectric wall is disposed on the device structure. The dielectric layer has a second air gap, exposing a top of the device structure and adjacent to the dielectric wall.

Abstract: The object is to provide a technology capable of increasing the reliability of a power semiconductor device. A power semiconductor device includes: a substrate including an insulating layer and a circuit pattern that are disposed in this order; a power semiconductor element electrically connected to the circuit pattern; and an electrode terminal having a thinned portion including a welded portion welded to the circuit pattern by a fiber laser. A thickness of the circuit pattern is not less than 0.2 and not more than 0.5 mm, and a thickness of the thinned portion of the electrode terminal is not less than one time and not more than two times the thickness of the circuit pattern.

Abstract: A semiconductor storage device according to an embodiment includes: a stacked body in which a plurality of conductive layers are stacked via an insulating layer and which has a memory portion in which a plurality of memory cells are disposed and a staircase portion in which end portions of the plurality of conductive layers form a staircase shape. The staircase portion has three or more first sub-staircase portions ascending in a direction opposite to a direction toward the memory portion, and at least one first sub-staircase portion among the three or more first sub-staircase portions is divided into at least an upper staircase and a lower staircase by a difference in level larger than a difference in level of each stair of the first sub-staircase portion.

Abstract: An interconnection structure is disclosed. The interconnection structure includes a base substrate, a set of conductive pads disposed on the base substrate and an interconnection layer disposed on the base substrate. The interconnection layer has an edge located next to the set of the conductive pads and includes a set of side connection pads located and disposed at the edge of the interconnection layer. Each side connection pad is arranged with respect to a corresponding one of the conductive pads disposed on the base substrate.

Abstract: An apparatus, comprising a substrate comprising a dielectric, a conductor, comprising a via embedded within the dielectric, the via has a first end and a second end, and substantially vertical sidewalls between the first end and the second end, and a conductive structure extending laterally from the first end of the via over the dielectric, wherein the via and the conductive structure have a contiguous microstructure.

Abstract: A semiconductor package includes a carrier substrate having a top surface, a semiconductor die mounted on the top surface, a plurality of bonding wires connecting an active surface of the semiconductor die to the top surface of the carrier substrate, an insulating material encapsulating the plurality of bonding wires, a component mounted on the insulating material, and a molding compound covering the top surface of the carrier substrate and encapsulating the semiconductor die, the plurality of bonding wires, the component and the insulating material.

Abstract: A device includes: a surface mount device carrier configured to be mounted to a metal submount of a transistor package, said surface mount device carrier includes an insulating substrate includes a top surface and a bottom surface and a first pad and a second pad arranged on a top surface of said surface mount device carrier; at least one surface mount device includes a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad; and at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said insulating substrate, where at least one of the first pad and the second pad are configured as wire bond pads.

Abstract: The present disclosure provides a semiconductor device, a method of manufacturing the semiconductor device and a mothed of method of manufacturing a semiconductor device assembly. The semiconductor device includes a substrate, a bonding dielectric disposed on the substrate, a first conductive feature disposed in the bonding dielectric, an air gap disposed in the bonding dielectric to separate a portion of a periphery of the first conductive feature from the bonding dielectric, and a second conductive feature including a base disposed in the bonding dielectric and a protrusion stacked on the base.

Abstract: The semiconductor device includes at least three semiconductor elements disposed directly or indirectly on a planar member and constituting an upper arm and a lower arm which perform ON and OFF action at mutually differential times; an upper-surface voltage applied region of each semiconductor element is configured to be narrower than an area of the aforementioned whole semiconductor element in planar view; and each semiconductor element is disposed so that the shortest distance between the semiconductor elements constituting the upper arm is formed so as to be longer than the shortest distance between the semiconductor element constituting the upper arm and the semiconductor element constituting the lower arm.

Abstract: Disclosed is a semiconductor package comprising a logic die mounted on an interposer substrate, and a memory stack structure disposed side-by-side with the logic die. The memory stack structure includes a buffer die mounted on the interposer substrate, and a plurality of memory dies stacked on the buffer die. The buffer die has a first surface that faces the interposer substrate and a second surface that faces the plurality of memory dies. The number of data terminals on the second surface is greater the number of connection terminals on the first surface.

Abstract: The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor device structure includes: a first conductive structure and a second conductive structure disposed at different vertical heights over a semiconductor substrate; a first conductive plug and a second conductive plug correspondingly disposed over the first conductive structure and the second conductive structure; a first spacer disposed on a sidewall surface of the first conductive plug; an etch stop layer disposed over the semiconductor substrate, wherein the etch stop layer adjoins the first spacer; and a first inter-layer dielectric (ILD) layer disposed over the etch stop layer and next to the first conductive plug, wherein the first ILD layer is separated from the first spacer by an air gap.

Abstract: A semiconductor apparatus according to the invention of the present application includes a base plate, a lead frame having a first surface and a second surface being a surface opposite to the first surface, the second surface being bonded to an upper surface of the base plate, a semiconductor device provided on the first surface of the lead frame, and a mold resin covering the upper surface of the base plate, the lead frame, and the semiconductor device, wherein the mold resin is provided with a terminal insertion hole that extends from the surface of the mold resin to the lead frame and in which a press-fit terminal is inserted, and the lead frame is provided with an opening portion which intercommunicates with the terminal insertion hole and into which the press-fit terminal is press-fitted.

Abstract: An object is to provide a technique capable of fixing a cover to a container body without using a dedicated fixation mechanism and fixation member. A semiconductor device includes: a container body having a space with an opening; a semiconductor element disposed in the space in the container body; a sealing member disposed in the space in the container body to cover the semiconductor element; and a cover covering the opening of the container body, wherein a convex portion protruding into the space is provided on the cover, and the cover is fixed to the container body only by embedding at least a tip portion of the convex portion in the sealing member which has been cured.

Abstract: A component carrier includes a stack having at least one electrically insulating layer structure and a plurality of electrically conductive layer structures, and a component embedded in the stack and having an array of pads on a main surface of the component. A first electrically conductive connection structure of the electrically conductive layer structures electrically connects a first pad of the pads up to a first wiring plane, and a second electrically conductive connection structure of the electrically conductive layer structures electrically connects a second pad of the pads up to a second wiring plane being different from the first wiring plane.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, a plurality of semiconductor elements disposed on the first surface in a device region, an insulating protective layer, and a connection pad. The second surface is divided into a first region overlapping the device region, and a second region surrounding the first region. The insulating protective layer is disposed on the second surface of the semiconductor substrate, and includes an edge pattern positioned in the second region. The edge pattern includes a thinner portion having a thickness smaller than a thickness of a center portion of the insulating protective layer positioned in the first region and/or an open region exposing the second surface of the semiconductor substrate. The connection pad is disposed on the center portion of the insulating protective layer and is electrically connected to the semiconductor elements.

Abstract: An assembly structure includes a core-computing section and a sub-computing section. The core-computing section has a first surface and a second surface opposite to the first surface. The core-computing section includes at least one conductive via electrically connecting the first surface and the second surface. The sub-computing section has a first surface stacked on the first surface of the core-computing section and a second surface opposite to the first surface. The sub-computing section includes at least one conductive via electrically connecting the first surface and the second surface. The assembly structure includes a first signal transmission path and a second signal transmission path. The first signal transmission path is between the at least one conductive via of the sub-computing section and the at least one conductive via of the core-computing section.

Abstract: Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.

Abstract: An integrated circuit package and a system including the integrated circuit package as well as a process for assembling the integrated circuit package are provided to improve integrated circuit power delivery. The integrated circuit package includes a first die having a plurality of pads formed in the first die and exposed on a top surface of the first die, at least one post on the first die, and a substrate including one or more redistribution layers. Each post in the at least one post spans at least two pads on the first die utilized for power distribution, and the first die is connected to the substrate via the at least one post.

Abstract: A semiconductor device includes a semiconductor layer structure that includes silicon carbide, a gate dielectric layer on the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. In some embodiments, a periphery of a portion of the gate dielectric layer that underlies the gate electrode is thicker than a central portion of the gate dielectric layer, and a lower surface of the gate electrode has recessed outer edges such as rounded and/or beveled outer edges.

Abstract: A workpiece cutting method includes attaching a tape to a lower surface of the workpiece, holding the lower surface through the tape on a holding table including a holding plate, at least a part of a holding surface of the holding plate being an imaging area formed of a material transparent to visible light, cutting the workpiece held on the holding table to divide the workpiece, thereby forming a dividing groove, and imaging at least a part of the dividing groove from a upper surface side of the workpiece by using an upper camera portion located above the holding plate, thereby obtaining an upper image, and also imaging the above part of the dividing groove from the lower surface side of the workpiece through the imaging area of the holding plate and the tape by using a lower camera portion located below the holding plate, thereby obtaining a lower image.

Abstract: The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor device structure includes a conductive structure disposed over a semiconductor substrate, and a conductive plug disposed over the conductive structure. The conductive plug is electrically connected to the conductive structure. The semiconductor device structure also includes a first spacer formed on a sidewall surface of the conductive plug, and an etch stop layer disposed over the semiconductor substrate. The etch stop layer adjoins the first spacer. The semiconductor device further includes a first inter-layer dielectric (ILD) layer disposed over the etch stop layer and next to the conductive plug, wherein the first ILD layer is separated from the first spacer by an air gap.

Abstract: A semiconductor package includes: a package substrate; a first semiconductor chip disposed over the package substrate and having a center region and an edge region; and a package redistribution layer disposed over the first semiconductor chip, wherein the first semiconductor chip comprises: a lower structure; a redistribution conductive layer disposed over the lower structure and electrically connected to the lower structure, the redistribution conductive layer including a redistribution pad disposed in the center region; and a protective layer covering the lower structure and the redistribution conductive layer, and having an opening exposing the redistribution pad, wherein the package redistribution layer comprises: a package redistribution conductive layer connected to the redistribution pad and extending to the edge region, the package redistribution conductive layer including a package redistribution pad disposed in the edge region, and, wherein, in the edge region, the redistribution conductive layer is

Abstract: A semiconductor device comprising: bonding pads formed in the first wiring layer; and first wirings and a second wiring formed in a second wiring layer provided one layer below the first wiring layer. Here, a power supply potential and a reference potential are to be supplied to each first wiring and the second wiring, respectively. Also, in transparent plan view, each of the first wirings is arranged next to each other, and is arranged at a first position of the second wiring layer, that is overlapped with the bonding region of the first bonding pad. Also, in transparent plan view, the second wiring is arranged at a second position of the second wiring layer, that is overlapped with a first region located between the first bonding pad and the second bonding pad. Further, a width of each first wiring is less than a width of the second wiring.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, a diffusion barrier layer, a passivation layer, and a plurality of conductive features. The diffusion barrier layer is disposed on the substrate, and the passivation layer is disposed on the diffusion barrier layer. The conductive features penetrate through the passivation layer and contact the diffusion barrier layer.

Abstract: An integrated circuit includes a first conductive layer and a first insulation layer formed on the first conductive layer. The integrated circuit also includes a second insulation layer formed on the first insulation layer and a second conductive layer formed on the second insulation layer. The first insulation layer may include a first defect, and the second insulation layer may include a second defect. The integrated circuit may also include a third insulation layer formed on the second conductive layer, a fourth insulation layer formed on the third insulation layer, and a third conductive layer formed on the fourth insulation layer. The third insulation layer may include a third defect, and the fourth insulation layer may include a fourth defect.

Abstract: An interconnection structure for metal lines, a method of fabricating the same, and a semiconductor device are provided. A plurality of interconnection structure layers are stacked one above another on a substrate with the support of at least one supporting and covering layer. In each of the interconnection structure layers, spaces between a plurality of conductive components are filled with air which has a low dielectric constant, rather than with dielectric material. Thus, parasitic capacitances in the interconnection structure can be significantly reduced and RC delay can be mitigated.

Abstract: A package has a first semiconductor die, a second semiconductor die, a redistribution structure and a metallic bolstering pattern. The second semiconductor die is disposed beside the first semiconductor die and spaced apart from the first semiconductor die with a distance. The redistribution structure is disposed over the first semiconductor die and the second semiconductor die and is electrically connected with the first and second semiconductor dies. The metallic bolstering pattern is disposed between the redistribution structure and the first and second semiconductor dies. The metallic bolstering pattern is disposed on the redistribution structure and located over the first and second semiconductor dies, and the metallic bolstering pattern extends across the distance between the first and second semiconductor dies and extends beyond borders of the first and second semiconductor dies.

Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.

Abstract: A semiconductor device includes a semiconductor part, a first electrode, a plurality of control electrodes and a second electrode. The semiconductor part has a plurality of first trenches and a second trench. The plurality of first trenches are spaced from each other and arranged around the second trench. The first electrode is provided above the semiconductor part. The first electrode is provided over the plurality of first trenches and the second trench. The control electrodes are provided in the first trenches, respectively. The control electrodes each are electrically isolated from the semiconductor part by a first insulating film. The second electrode is provided in the second trench. The second electrode is electrically isolated from the semiconductor part by a second insulating film and electrically connected to the first electrode.

Abstract: A diode and method of design the layout of the same having reduced parasitic capacitance is disclosed. In particular, the diode for providing fast response protection of an RF circuit from a high power noise event, such as an ESD, voltage spike, power surge or other noise is disclose. The parasitic capacitance in disclosed circuit is a greatly reduced compared to the prior art, thus significantly increasing the speed of the response to dissipate all high power noise events.

Abstract: A semiconductor package includes: a semiconductor chip including a body having a first surface and a second surface, opposing the first surface, a connection pad disposed on the first surface of the body, and an extension pad disposed on the connection pad; and a connection structure including an insulating layer disposed on the first surface of the body of the semiconductor chip, a redistribution via penetrating through the insulating layer and having one side thereof in contact with the extension pad, and a redistribution layer disposed on the insulating layer and having a via pad in contact with the other side of the redistribution via, wherein a horizontal cross-sectional area of extension pad of the semiconductor chip is greater than a horizontal cross-sectional area of the connection pad of the semiconductor chip.

Abstract: A semiconductor device includes a first substrate structure and a second substrate structure. The first substrate structure includes a base substrate, circuit elements disposed on the base substrate, a first substrate disposed on the circuit elements, first memory cells disposed on the first substrate and electrically connected to the circuit elements, first bit lines disposed on the first memory cells and connected to the first memory cells, and first bonding pads disposed on the first bit lines to be connected to the first bit lines, respectively. The second substrate structure is connected to the first substrate structure on the first substrate structure, and includes a second substrate, second memory cells disposed on the second substrate, second bit lines disposed on the second memory cells and connected to the second memory cells, and second bonding pads disposed on the second bit lines to be connected to the second bit lines, respectively.

Abstract: A 3D semiconductor device, the device including: a first level including single crystal first transistors, and a first metal layer, where the first level is overlaid by a first isolation layer; a second level including second transistors, where the first isolation layer is overlaid by the second level, and where the second level is overlaid by a second isolation layer; a third level including single crystal third transistors, where the second isolation layer is overlaid by the third level, where the third level is overlaid by a third isolation layer, where the third level is bonded to the second isolation layer, and where the bonded includes at least one oxide to oxide bond.

Abstract: Semiconductor devices having mechanical pillar structures, such as angled pillars, that are rectangular and orientated with respect to a semiconductor die to reduce bending stress and in-plane shear stress at a semiconductor die to which the angled pillars are attached, and associated systems and methods, are disclosed herein. The semiconductor device can include angled pillars connected to the semiconductor die and to a package substrate. The angled pillars can be configured such that they are orientated relative to a direction of local stress to increase section modulus.

Abstract: Provided in the present invention are an LDMOS component, a manufacturing method therefor, and an electronic device, comprising: a semiconductor substrate (100); a drift area (101) provided in the semiconductor substrate; a gate electrode structure (103) provided on a part of the surface of the semiconductor substrate and covers a part of the surface of the drift area; a source electrode (1052) and a drain electrode (1051) respectively provided in the semiconductor substrate on either side of the gate electrode structure, where the drain electrode is provided in the drift area and is separated from the gate electrode structure; a metal silicide barrier layer (106) covering the surface of at least a part of the semiconductor substrate between the gate electrode structure and the drain electrode; and a first contact hole (1081) provided on the surface of at least a part of the metal silicide barrier layer.

Abstract: A display device may include a substrate, pixels, and a crack mitigation structure. The substrate may include a main region, a sub-region, and a bending region. The bending region may be connected between the main region and the sub-region and may include a curved outline section. The pixels may be disposed on the main region. The crack mitigation structure may be disposed on the bending region. A section of the crack mitigation structure may be substantially parallel to the curved outline section.

Abstract: A method of designing a memory circuit is provided that includes generating a layout of a first memory cell using an integrated circuit design system. The layout of the first memory cell is generated by routing a first word line in a first layer on a first level, and routing a second word line in the first layer. Also, the method includes generating a layout of a second memory cell using the integrated circuit design system. The layout of the second memory cell is generated by routing a third word line in the first layer, the second word line being between the first word line and the third word line, and routing a fourth word line in the first layer, the third word line being between the second word line and the fourth word line. Moreover, the method includes assigning a first color scheme to the first word line and to the third word line, and assigning a second color scheme to the second word line and to the fourth word line.

Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. The second semiconductor structure is positioned on the first connecting structure and includes two second conductive features positioned on the two first conductive layers. The first conductive layer has a first width, the second conductive feature has a second width greater than the first width, and the different width forms a step-shaped cross-sectional profile near an interface of the first conductive layer and the second conductive feature.

Abstract: According to the embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, a first memory cell, a second memory cell, a third conductive layer, a first contact, a intermediate memory cell, a fourth conductive layer, a third memory cell, a fifth conductive layer, and a second contact. The third conductive layer is separated from the first conductive layer and the second conductive layer in a third direction crossing a first direction and crossing a second direction and extends in the second direction. The fifth conductive layer is separated from the second conductive layer in the third direction and extends in the second direction. A first length of the second conductive layer along the second direction is shorter than a second length of the fifth conductive layer along the second direction.

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

Abstract: Structures that include interconnects and methods for forming a structure that includes interconnects. A metallization level has a first interconnect, a second interconnect, and a cavity with an entrance between the first interconnect and the second interconnect. A first dielectric layer includes a first section arranged on the first interconnect adjacent to the entrance of the cavity and a second section arranged on the second interconnect adjacent to the entrance of the cavity. A second dielectric layer is formed on the first section of the first dielectric layer and the second section of the first dielectric layer. The second dielectric layer extends from the first section of the first dielectric layer to the second section of the first dielectric layer and across the entrance to the cavity to close an airgap between the first interconnect and the second interconnect.