Abstract: A semiconductor encapsulation adhesive composition comprising (a) an epoxy resin, (b) a curing agent and (c) an antioxidant.

Abstract: Thermosetting resin compositions useful for liquid compression molding encapsulation of a silicon wafer are provided. The so-encapsulated silicon wafers offer improved resistance to warpage, compared to unencapsulated wafers or wafers encapsulated with known encapsulation materials.

Abstract: A semiconductor structure less affected by stress and a method for forming the same are provided. The semiconductor structure includes a semiconductor chip. Stress-sensitive circuits are substantially excluded out of an exclusion zone to reduce the effects of the stress to the stress-sensitive circuits. The stress-sensitive circuits include analog circuits. The exclusion zone preferably includes corner regions of the semiconductor chip, wherein the corner regions preferably have a diagonal length of less than about one percent of the diagonal length of the semiconductor chip. The stress-sensitive analog circuits preferably include devices having channel lengths less than about five times the minimum channel length.

Abstract: A semiconductor device includes a carrier and a first chip attached to the carrier. The semiconductor device includes a sintered insulation material over at least a portion of the carrier and the first chip.

Abstract: A stack of semiconductor chips, a semiconductor device, and a method of manufacturing are disclosed. The stack of semiconductor chips may comprise a first chip of the stack, a second chip of the stack over the first chip, conductive bumps, a homogeneous integral underfill material, and a molding material. The conductive bumps may extend between an upper surface of the first chip and a lower surface of the second chip. The homogeneous integral underfill material may be interposed between the first chip and the second chip, encapsulate the conductive bumps, and extend along sidewalls of the second chip. The homogeneous integral underfill material may have an upper surface extending in a direction parallel to an upper surface of the second chip and located adjacent the upper surface of the second chip.

Abstract: A semiconductor encapsulation material which exhibits a low viscosity and further improved moldability in encapsulation even when highly loaded with an inorganic filler; an amorphous siliceous powder suitable for the preparation of a resin composition useful as the encapsulation material; and a process for the production of the amorphous siliceous powder. An amorphous siliceous powder having a content of Si and Al of 99.5 mass % or above in terms of oxides, wherein the Al content in the particle size region of 15 ?m to less than 70 ?m is 100 to 30000 ppm in terms of oxides; the Al content in the particle size region of 3 ?m to less than 15 ?m is 100 to 7000 ppm in terms of oxides; and the Al content in the whole particle size region is 100 to 25000 ppm in terms of oxides. It is preferable that the (A)/(B) ratio of the Al content (A) in the particle size region of 15 ?m to less than 70 ?m to the Al content (B) in the particle size region of 3 ?m to less than 15 ?m be 1.0 to 20.

Abstract: A semiconductor chip includes a first main face and a second main face opposed to the first main face. Side faces connect the first and second main faces. The side faces are at least partially covered with an anti-EBO compound and/or a surface energy reducing compound.

Abstract: An improved reliability of a junction region between a bonding wire and an electrode pad in an operation at higher temperature is presented. A semiconductor device includes a semiconductor chip provided on a lead frame, which are encapsulated with an encapsulating resin. Lead frames are provided in both sides of the lead frame. A portion of the lead frame is encapsulated with the encapsulating resin to function as an inner lead. The encapsulating resin is composed of a resin composition that contains substantially no halogen. Further, an exposed portion of the Al pad provided in the semiconductor chip is electrically connected to the inner lead via the AuPd wire.

Abstract: Provided is a resin composition for encapsulating a semiconductor which has excellent flame resistance and solder resistance, and can be manufactured at a low cost. The composition includes a phenol resin (A), an epoxy resin (B), and an inorganic filler (C).

Abstract: Disclosed is a granular resin composition for encapsulating a semiconductor used for a semiconductor device obtained by encapsulating a semiconductor element by compression molding, satisfying the following requirements (a) to (c) on condition that ion viscosity is measured with a dielectric analyzer under a measurement temperature of 175° C. and a measurement frequency of 100 10 Hz: (a) the time from the initiation of the measurement until a decrease of the ion viscosity to the lowest ion viscosity is 20 seconds or shorter; (b) the lowest ion viscosity value is not more than 6.5; and (c) the time interval between the time from the initiation of the measurement until a decrease of the ion viscosity to the lowest ion viscosity and the time from the initiation of the measurement until the ion viscosity reaching 90% of an ion viscosity value measured at 300 seconds is 10 seconds or longer.

Abstract: A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.

Abstract: Provided is a method for manufacturing an electronic component by using a solder joining method for bonding a first electronic component having a metal electrode with a second electronic component having a solder electrode, the method comprising; (i) forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of said first electronic component and said second electronic component; (ii) positioning said metal electrode of said first electronic component and said solder electrode of said second electronic component to face each other, heating said positioned electrodes and applying pressure, and thereby bringing said metal electrode and said solder electrode into contact; (iii) heating electronic components while applying pressure thereby fusion bonding said solder to said metal electrode; and (iv) heating said resin layer.

Abstract: An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device, the composition including an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and an additive, wherein the epoxy resin includes an epoxy resin represented by Formula 1:

Abstract: An epoxy resin composition for encapsulating a semiconductor chip according to this invention comprises (A) a crystalline epoxy resin, (B) a phenol resin represented by general formula (1): wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10, (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.

Abstract: Disclosed is a resin composition for encapsulating a semiconductor containing a curing agent, an epoxy resin (B) and an inorganic filler (C), wherein the curing agent is a phenol resin (A) having a predetermined structure. Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.

Abstract: The present invention is related to a method for producing a resin compact containing an epoxy resin, a curing agent, a curing accelerator and an inorganic filler. The method includes a kneading and crushing process for preparing a first powder material obtained by mixing, heat-melting, kneading and crushing a first component containing the epoxy resin and the curing agent and the inorganic filler, but not containing the curing accelerator; a pulverizing process for preparing a second powder material obtained by pulverizing a second component containing the curing accelerator; a mixing process for preparing a resin composition by dispersing and mixing the first powder material and the second powder material; and a molding process for obtaining the resin compact by compression-molding the resin composition. This makes it possible to obtain a resin compact (particularly, a resin compact for encapsulation) having superior long term storage stability at room temperature, good curable property and fluidity.

Abstract: An insulating member of the invention can include an epoxy resin, a first inorganic filler diffused in the epoxy resin and having an average particle diameter of 1 to 99 nm, and a second inorganic filler diffused in the epoxy resin and having an average particle diameter of 0.1 to 100 ?m. The first and second inorganic fillers can be independent of each other, and can be selected from a group including Al2O3, SiO2, BN, AlN, and Si3N4, and the blending ratios of the first and second inorganic fillers in the insulating member can be 0.1 to 7% by weight and 80 to 95% by weight respectively. A metal base substrate can be formed by forming a metal foil and a metal base on either surface of the insulating member.

Abstract: A liquid epoxy resin composition for semiconductor encapsulation comprising: (A) at least one epoxy resin, (B) at least one curing accelerator and (C) at least one acid anhydride terminated polyamic acid. The liquid epoxy resin composition provides a cured material that has an excellent adhesiveness to a semiconductor chip surface and has an excellent moisture resistance.

Abstract: The positive tone photosensitive composition of the invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound producing an acid by light, a thermal crosslinking agent and an acrylic resin. It is possible to provide a positive tone photosensitive composition that can be developed with an aqueous alkali solution, has sufficiently high sensitivity and resolution, and can form a resist pattern with excellent adhesiveness and thermal shock resistance.

Abstract: Disclosed herein is a resin composition including 100 parts by weight of an organic resin and 50 to 1,000 parts by weight of an inorganic filler, wherein 10 to 100% of the inorganic filler is composed of an oxide of a rare earth element.

Abstract: An epoxy resin composition for encapsulating a semiconductor chip according to this invention comprises (A) a crystalline epoxy resin, (B) a phenol resin represented by general formula (1): wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10, (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (F): (A) an epoxy resin; (B) a phenol resin; (C) a curing accelerator; (D) an inorganic filler; (E) a hydrotalcite compound; and (F) a carboxyl group-containing wax having an acid value of 10 to 100 mg KOH/g.

Abstract: An epoxy resin composition for encapsulating a semiconductor chip according to this invention comprises (A) a crystalline epoxy resin, (B) a phenol resin represented by general formula (1): wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10, (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.

Abstract: A light emitting device includes a resin molded body having a circular or an oval recessed section at the center suppresses generation of cracks. The device is provided with a light emitting element, a first resin molded body having a plurality of outer surfaces, and a recessed section at the center. First and second leads are electrically connected to the light emitting element, and a second resin molded body is applied in the recessed section. The light emitting element is placed on the first lead, and the surface of the second resin molded resin forms a light emitting surface. A gate notch is formed on an extended line of a normal line on one point on a circular cross-section of the recessed section in the normal line direction.

Abstract: An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.

Abstract: A process for coating a semiconductor wafer with a coating composition comprises curing the coating with a pulsed UV light, thereby preventing delamination during reflow operations. In a particular embodiment, the coating composition comprises both epoxy and acrylate resins. The epoxy resin can be cured thermally; the acrylate resin is cured by UV irradiation.

Abstract: A nanocrystal composite that includes a matrix including semiconductor nanocrystals, and a barrier layer disposed on at least a portion of the surface of the matrix and including a polymer with low oxygen permeability, low moisture permeability, or both.

Abstract: Disclosed is a granular epoxy resin composition for encapsulating a semiconductor used for a semiconductor device obtained by encapsulating a semiconductor element by compression molding, wherein, in the particle size distribution as determined by sieving the whole epoxy resin composition for encapsulating a semiconductor using JIS standard sieves, the ratio of particles having a size of 2 mm or greater is not more than 3% by mass, the ratio of particles having a size of 1 mm or greater, but less than 2 mm is from 0.5% by mass or more to 60% by mass or less, and the ratio of microfine particles having a size of less than 106 ?m is not more than 5% by mass.

Abstract: A curable epoxy resin composition including at least an epoxy resin component and a hardener component, and optionally further additives, wherein: (a) the epoxy resin component is an epoxy resin compound or a mixture of such compounds; (b) the hardener component includes (b1) an aliphatic and cycloaliphatic or aromatic polycarbonic acid anhydride; and (b2) a polyether-amine of the general formula (I), H2N—(CnH2n—O)m—CnH2n—NH2, wherein n is an integer from 2 to 8; and m is from about 3 to about 100; (c) the polycarbonic acid anhydride [component (b1)] is present in the curable epoxy resin composition in a concentration of 0.60 Mol to 0.93 Mol; and (d) the polyether-amine of the general formula (I) [component (b2)] is present in the curable epoxy resin composition in a concentration of about 0.02 Mol to about 0.1 Mol.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (E), in which the component (D) is contained in an amount of from 0.1 to 1.

Abstract: According to the present invention, an epoxy resin composition for semiconductor encapsulant including (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a compound in which a copolymer of a 1-alkene having 5 to 80 carbon atoms and maleic anhydride is esterified with an alcohol having 5 to 25 carbon atoms in the presence of a compound represented by General Formula (1), wherein R1 in General Formula (1) is selected from the group consisting of an alkyl group having 1 to 5 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, and an aromatic group having 6 to 10 carbon atoms is provided.

Abstract: Semiconductor devices and assemblies including interconnects and methods for forming such interconnects are disclosed herein. One embodiment of a method of manufacturing a semiconductor device includes forming a plurality of first side trenches to an intermediate depth in a molded portion of a molded wafer having a plurality of dies arranged in rows and columns. The method also includes removing material from a second side of the molded portion at areas aligned with the first side trenches, wherein removing the material forms openings through the molded portion. The method further includes forming a plurality of electrical contacts at the second side of the molded portion at the openings and electrically connecting the second side contacts to corresponding bond-sites on the dies.

Abstract: Disclosed are an epoxy resin composition for semiconductor encapsulation containing (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler material, (D) a hydrocarbon compound having structures of formula (1) and formula (2), and (E) a hydrocarbon compound having an ester group; and a semiconductor device including a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation.

Abstract: An epoxy resin composition for encapsulating a semiconductor chip according to this invention comprises (A) a crystalline epoxy resin, (B) a phenol resin represented by general formula (1): wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10, (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.

Abstract: The symbolization of a semiconductor device (100) is incorporated in a thin sheet (130) attached to the top of the device, facing outwardly with its bare surface. The material of the sheet (about 1 to 10 ?m thick) includes regions of a first optical reflectivity and a first color, and regions (133) of a second optical reflectivity and a second color, which differ from, and contrast with, the first reflectivity and color. Preferred choices for the sheet material include the compound o-cresol novolac epoxy and the compound bisphenol-A, more preferably with the chemical imidazole added to the film material. A preferred embodiment of the invention is a packaged device with a semiconductor chip a (101) connected to a substrate (102); the connection is achieved by bonding wires (111) forming an arch with a top 111a. The chip, the wire arches, and the substrate are embedded in an encapsulation material (120), which borders on the attached top sheet so that the arch tops touch the border (131).

Abstract: The invention provides a composition for sealing a semiconductor, the composition being able to form a thin resin layer, suppress the diffusion of a metal component to a porous interlayer dielectric layer, and exhibit superior adherence with respect to an interconnection material. The composition for sealing a semiconductor contains a resin having two or more cationic functional groups and a weight-average molecular weight of from 2,000 to 100,000; contains sodium and potassium each in an amount based on element content of not more than 10 ppb by weight; and has a volume average particle diameter, measured by a dynamic light scattering method, of not more than 10 nm.

Abstract: A chip-packaging module for a chip is provided, the chip-packaging module including an isolation material configured to cover a chip on at least one side, the isolation material having a first surface proximate to a first side of a chip, and said isolation material having a second surface facing an opposite direction to the first surface; and at least one layer in connection with the chip first side, the at least one layer further configured to extend from the chip first side to the second surface of the isolation material.

Abstract: Provided are a method for producing a phosphorus-containing phenolic compound in which reactivity is considerably excellent in the reaction between a phosphorus-containing compound and an aromatic nucleus of a phenol; in the case of using a polyhydric phenol or a phenolic resin as the phenol, a novel phosphorus-containing phenolic compound that serves as a curing agent for an epoxy resin and imparts excellent heat resistance to a cured product; a curable resin composition containing the novel phosphorus-containing phenolic compound; a cured product of the curable resin composition; a printed wiring board; and a semiconductor sealing material. An aromatic aldehyde (a1) having an alkoxy group as a substituent on an aromatic nucleus is allowed to react with an organic phosphorus compound (a2) intramolecularly having a P—H group or a P—OH group. The resultant reaction product is then allowed to react with a phenol (a3).

Abstract: This invention relates to curable sealants that provide low moisture permeability and good adhesive strength after cure. The composition comprises an aromatic compound having meta-substituted reactive groups and a cationic or radical initiator.

Abstract: An epoxy resin composition for semiconductor encapsulation, which comprises: (A) an epoxy resin having at least two epoxy groups in a molecule thereof; (B) a compound having at least two phenolic hydroxyl groups in a molecule thereof; and (C) particles of a compound represented by general formula (1), the particles having a maximum particle diameter of not greater than 30 ?m and a standard deviation of not greater than 5 ?m, the particles being dispersed in the epoxy resin composition: wherein X1 to X5, which may be the same or different, are each a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or a fluorine atom. The epoxy resin composition is an encapsulation material excellent in pot life, fluidity and curability, and has a lower chloride ion content. The epoxy resin composition provides a highly reliable semiconductor device excellent in moisture resistant reliability.

Abstract: A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.

Abstract: Disclosed is an epoxy resin composition used for encapsulation of a semiconductor containing an epoxy resin (A), a curing agent (B), an inorganic filler (C) and a mold releasing agent, in which the mold releasing agent contains a compound (D) having a copolymer of an ?-olefin having 28 to 60 carbon atoms and a maleic anhydride esterified with a long chain aliphatic alcohol having 10 to 25 carbon atoms.

Abstract: The present invention provides a liquid resin composition for electronic components, which is excellent in migration resistance and also superior in formability and reliability, as well as an electronic component device sealed therewith, and relates to a liquid resin composition for electronic components, which comprises (A) an epoxy resin, (B) a cyclic acid anhydride which is liquid at ordinary temperature and has an acid anhydride equivalent of 200 or more, and (C) a coupling agent.

Abstract: A semiconductor chip includes a first main face and a second main face opposed to the first main face. Side faces connect the first and second main faces. The side faces are at least partially covered with an anti-EBO compound and/or a surface energy reducing compound.

Abstract: An electroconductive bonding material contains a thermosetting resin, a low-melting-point metal powder which is melted at a temperature equal to or lower than the thermosetting temperature of the thermosetting resin, a high-melting-point metal powder which is not melted at a temperature equal to or lower than the thermosetting temperature of the thermosetting resin and which reacts with the low-melting-point metal powder to form a reaction product having a high melting point of 300° C. or higher during heat-hardening of the thermosetting resin, and a reducing substance which removes an oxide formed on the surface of the high-melting-point metal powder. The total content of the low-melting-point metal powder and the high-melting-point metal powder is 75% to 88% by weight, and the particle size ratio D1/D2 of the average particle size D1 of the low-melting-point metal powder to the average particle size D2 of the high-melting-point metal powder is 0.5 to 6.0.

Abstract: An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device, the composition including an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and an additive, wherein the epoxy resin includes an epoxy resin represented by Formula 1:

Abstract: A fiber-containing resin substrate for collectively sealing a semiconductor devices mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor devices forming surface of a wafer having semiconductor devices formed thereon, includes: a resin-impregnated fiber base material obtained by impregnating a fiber base material with a thermosetting resin and semi-curing or curing the thermosetting resin; and an uncured resin layer containing an uncured thermosetting resin and formed on one side of the resin-impregnated fiber base material.

Abstract: A thermosetting encapsulation adhesive sheet which is used for encapsulating a chip type device (1) having connection electrodes (bumps) (3) and mounted on a wiring circuit board (2). The thermosetting encapsulation adhesive sheet is composed of an epoxy resin composition having a viscosity of 5×104 to 5×106 Pa·s as measured at a temperature of 80 to 120° C. before thermosetting thereof. The thermosetting encapsulation adhesive sheet makes it possible to conveniently encapsulate a hollow device with an improved yield.

Abstract: The present invention relates to an epoxy resin composition for photosemiconductor element encapsulation, the epoxy resin composition including the following components (A) to (D): (A) an epoxy resin having two or more epoxy groups in one molecule thereof, (B) an acid anhydride curing agent, (C) a curing accelerator, and (D) an alcohol compound having three or more primary hydroxyl groups in one molecule thereof.

Abstract: An encapsulation resin composition for preapplication, comprising (a) an epoxy resin, and (b) a curing agent having flux activity, wherein the tack after B-staging is at least 0 gf/5 mm? and at most 5 gf/5 mm?, and the melt viscosity at 130° C. is at least 0.01 Pa·s and at most 1.0 Pa·s; a preapplied encapsulated component and semiconductor device using the composition, and a process of fabrication thereof. The resin composition is less susceptible to air entrapment during provisional placement of semiconductor chips, and excels in workability and reliability.