Abstract: A method is provided for the selective harvest of microLED devices from a carrier substrate. Defect regions are predetermined that include a plurality of adjacent defective microLED devices on a carrier substrate. A solvent-resistant binding material is formed overlying the predetermined defect regions and exposed adhesive is dissolved with an adhesive dissolving solvent. Non-defective microLED devices located outside the predetermined defect regions are separated from the carrier substrate while adhesive attachment is maintained between the microLED devices inside the predetermined defect regions and the carrier substrate. Methods are also provided for the dispersal of microLED devices on an emissive display panel by initially optically measuring a suspension of microLEDs to determine suspension homogeneity and calculate the number of microLEDs per unit volume.

Abstract: The present disclosure provides an OLED display panel including a substrate, and a gate electrode, an active layer, a source electrode, and a drain electrode of a TFT device disposed on the substrate, and an anode of an OLED device disposed on the substrate; wherein the source electrode, the drain electrode, and the anode are formed in a same layer, and the anode is connected to the source electrode. The source electrode, the drain electrode, and the anode are arranged in a same layer, so that the source electrode, the drain electrode, and the anode are formed through a single process, thereby simplifying a manufacturing process and saving costs.

Abstract: Aspects of the present disclosure relate to a lighting device that is configured to provide light with a high color rendering index (CRI) value and/or uniform planar illumination. The lighting device may include a circuit board, a light emitting diode (LED) mounted to the circuit board and configured to emit broad spectrum light having a first CRI value, a photo-luminescent material disposed above the LED mounted to the circuit board configured to increase the CRI of the broad spectrum light emitted by the LED from the first CRI value to a higher, second CRI value, and an elastomer encapsulating at least part of the circuit board. Additionally, the lighting device may include a lens disposed over the LED configured to increase the maximum emission angle of light from the LED and a diffuser disposed above the lens and configured to diffuse the broad spectrum light.

Abstract: A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed below the first LED sub-unit, and a filler disposed between the electrode pads, in which the electrode pads include a common electrode pad electrically connected in common to the first, second, and third LED sub-units, and first, second, and third electrode pads connected to the first, second, and third LED sub-units, respectively, the first, second, and third LED sub-units are independently drivable, light generated in the first LED sub-unit is configured to be emitted to the outside of the light emitting device through the second and third LED sub-units, and light generated in the second LED sub-unit is configured to be emitted to the outside through the third LED sub-unit.

Abstract: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

Abstract: A light-emitting device manufacturing method including providing a light-emitting structure including one or more light-emitting elements and a covering member covering the light-emitting elements. Each of the light-emitting elements have first and second electrodes. The light-emitting structure has a first surface and a second surface opposite to the first surface, and lower surfaces of the first and second electrodes of each light-emitting element are closer to the first surface than the second surface. The method further includes forming a groove structure on the first surface side by irradiation with laser light such that at least part of the first and second electrodes are exposed to an inside of the groove structure, and forming a plurality of wirings inside of the groove structure.

Abstract: A multi-pixel LED package is disclosed. The multi-pixel LED package includes: n pixel groups (where n is a natural number equal to or greater than 2), each of which includes a plurality of pixels, each of which includes a first LED chip, a second LED chip, and a third LED chip; and a substrate on which the n pixel groups are arrayed.

Abstract: A red luminophor, LED device and method for making the LED device. The red luminophor includes one or more materials selected from SrLiAl3N4:Eu2+, CaLiAl3N4:Eu2+, Sr4LiAl11N14:Eu2+ and Li2Ca2(Mg2Si2N6):Eu2+. The LED device includes the red luminophor. The method for making the LED device includes preparing a carrier; installing a blue LED onto the carrier; mixing the red luminophors and the transparent sealant to form a mixture; dispensing the mixture on the blue LED and the carrier to form an integration; and heating and curing the integration. The red luminophor has continuous light radiation in the wavelength range of 600 nm-750 nm, with the emission peak at 650-680 nm and the FWHM of less than 90 nm. Its emission light intensity at the wavelength of 730 nm is not less than 30% of its maximum emission light intensity, which matches the absorption needs of phytochrome of plant.

Abstract: A display device including a first sub-pixel and a second sub-pixel is provided. The first sub-pixel includes a first light emitting unit and a first wavelength conversion layer disposed thereon. The first sub-pixel provides a first light emitted from the first light emitting unit and converted by the first wavelength conversion layer. The first light includes a first main-peak and a first sub-peak. The second sub-pixel includes a second light emitting unit and a second wavelength conversion layer disposed thereon. The second sub-pixel provides a second light emitted from the second light emitting unit and converted by the second wavelength conversion layer. The second light includes a second main-peak and a second sub-peak. A first wavelength difference between the first main-peak and the second main-peak is less than 20 nm, and the first wavelength difference is less than a second wavelength difference between the first sub-peak and the second sub-peak.

Abstract: A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed below the first LED sub-unit, and a filler disposed between the electrode pads, in which the electrode pads include a common electrode pad electrically connected in common to the first, second, and third LED sub-units, and first, second, and third electrode pads connected to the first, second, and third LED sub-units, respectively, the first, second, and third LED sub-units are independently drivable, light generated in the first LED sub-unit is configured to be emitted to the outside of the light emitting device through the second and third LED sub-units, and light generated in the second LED sub-unit is configured to be emitted to the outside through the third LED sub-unit.

Abstract: Light-emitting diodes (LEDs), LED arrays, and related devices are disclosed. An LED device includes a first LED chip and a second LED chip mounted on a submount with a light-altering material in between. The light-altering material may include at least one of a light-reflective material and/or a light-absorbing material. Individual wavelength conversion elements may be arranged on each of the first and second LED chips. The light-altering material may improve the contrast between the first and second LED chips as well as between the individual wavelength conversion elements. The light-altering material may include at least one of nanoparticles, nanowires, mesowires, or combinations thereof. LED devices may include submounts in modular configurations where LED chips may be mounted on adjacent submounts to form an LED array.

Abstract: A light-transmissive organic EL display panel including: a light transmissive substrate; organic EL elements on the substrate, where pixels each including a plurality of organic EL elements arranged along a row direction are arranged in pixel columns arranged in parallel along the row direction, and intervals between the pixel columns are each greater than a width in the row direction of any of the pixel columns; and dummy light emitting layers, wherein each of the organic EL elements included in one of the pixels includes any one of a plurality of organic light emitting materials that emit different colors of light, and the dummy light emitting layers include any one of the plurality of organic light emitting materials and are present above portions of non-pixel regions adjacent to the pixel columns in the row direction.

Abstract: A display panel includes scanning lines, data lines, and pixel areas. A plurality of the scanning lines are parallelly disposed along a first direction of the display panel. A plurality of the data lines are parallelly disposed along a second direction of the display panel. Each pixel area is controlled by three adjacent data lines and two adjacent scanning lines to display. Each pixel area includes a base sub-pixel and a matching sub-pixel. The base sub-pixel includes three base unit pixels, and the data lines corresponding to each pixel area include a first data line and a second data line. The first data line is coupled with the three base unit pixels, and the second data line is coupled with the matching sub-pixel. The matching sub-pixel shares one scanning line with at least one base unit pixel.

Abstract: A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed below the first LED sub-unit, and a filler disposed between the electrode pads, in which the electrode pads include a common electrode pad electrically connected in common to the first, second, and third LED sub-units, and first, second, and third electrode pads connected to the first, second, and third LED sub-units, respectively, the first, second, and third LED sub-units are independently drivable, light generated in the first LED sub-unit is configured to be emitted to the outside of the light emitting device through the second and third LED sub-units, and light generated in the second LED sub-unit is configured to be emitted to the outside through the third LED sub-unit.

Abstract: An optoelectronic circuit assembly has a first optoelectronic component and a second optoelectronic component, wherein the optoelectronic components each comprise a housing body with an upper face and a lower face, wherein in the housing body of each optoelectronic component, a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are embedded, wherein the optoelectronic components are mounted on a circuit board, wherein the first optoelectronic semiconductor chip of the first optoelectronic component and the first optoelectronic semiconductor chip of the second optoelectronic component are connected to a first conductor track in an electrically conductive manner, wherein the second optoelectronic semiconductor chip of the first optoelectronic component and the second optoelectronic semiconductor chip of the second optoelectronic component are connected to a second conductor track in an electrically conductive manner, wherein the first optoelectronic semiconductor chip or the

Abstract: A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

Abstract: A method for producing a plurality of radiation-emitting semiconductor components and a radiation-emitting semiconductor component are disclosed. In an embodiment a method includes providing an auxiliary carrier, applying a first structured wavelength converting layer to the auxiliary carrier comprising a plurality of structural elements, filling regions between the structural elements with a first reflective casting compound and applying a radiation-emitting semiconductor chip with its front side to one structural element of the first structured wavelength converting layer in each case.

Abstract: A display panel can include a substrate including first, second and third subpixels; an overcoat layer including a first inclined surface in at least one of the first, second and third subpixels; first, second and third anode electrodes corresponding to the first, second and third subpixels, respectively, wherein at least one of the first, second and third anode electrodes includes a second inclined surface overlapping with the first inclined surface of the overcoat layer; first, second and third organic light emitting layers disposed on the first, second and third anode electrodes, respectively; and a bank layer disposed on the overcoat layer, the bank layer including a third inclined surface overlapping with both the first and second inclined surfaces of the overcoat layer and the at least one of the first, second and third anode electrodes, in which at least one of the first, second and third inclined surfaces is configured to reflect light emitted from a corresponding one of the first, second and third or

Abstract: An image display device includes a plurality of pixels each of which includes a plurality of first subpixels and a second subpixel. The plurality of first subpixels is configured to emit red light, green light, and blue light. The second subpixel is configured to emit blue light. The plurality of pixels includes at least one pixel in which the plurality of first subpixels includes a defective subpixel which is supposed to emit predetermined light with a predetermined color. The second subpixel includes a light-emitting element and a wavelength conversion layer provided over the light-emitting element to convert emission light emitted from the light-emitting element to converted light with the predetermined color if the predetermined color is red or green.

Abstract: A light source device includes: a driving circuit; a blue light emitting element made of a group III nitride semiconductor which has a light outgoing surface on a side opposite to a side with the driving circuit, is arranged on the driving circuit, and is electrically connected to the driving circuit; and a color conversion layer which is in contact with the light outgoing surface and converts a wavelength of light emitted from the light outgoing surface. The light outgoing surface is made of a group III nitride semiconductor.

Abstract: Display panel, repair method, and display device are provided. The display panel includes: a base substrate; an array substrate including driving thin film transistors (TFTs); first electrodes connected to the TFTs in a one-to-one correspondence; a light-emitting structure including first light-emitting diodes (LEDs) and second LEDs; a second electrode; and one of first and second insulating layers. In each sub-pixel unit, a first LED electrode and a third LED electrode of a first LED is connected to a corresponding first electrode and the second electrode, respectively; the first insulating layer is formed between a second LED electrode of a second LED and the corresponding first electrode, and a fourth LED electrode of the second LED is connected to the second electrode; and the second insulating layer is formed between the fourth LED electrode and the second electrode, and the second LED electrode is connected to the corresponding first electrode.

Abstract: The invention relates to an optoelectronic component (100) having a semiconductor chip (2) for generating a primary radiation in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip and is designed to generate a secondary radiation from the primary radiation, wherein the conversion element (4) comprises at least one first phosphor (9) and a second phosphor (10), wherein the first phosphor (9) is Sr(Sr1?xCax)Si2Al2N6:Eu2+ and/or (Sr1?yCay)[LiAl3N4]:Eu2+, where 0?x?1 and 0?y?1, wherein a total radiation (G) exiting from the component (100) is white mixed light.

Abstract: A display device includes at least one first and second electrodes extending in a first direction, at least one first and second light emitting elements disposed therebetween, a first contact electrode partially covering the first electrode and contacting a first end of the first light emitting element, a second contact electrode partially covering the second electrode and contacting a third end of the second light emitting element, and a third contact electrode disposed between the first and second contact electrodes and contacting a second end of the first light emitting element and a fourth end of the second light emitting element, in which a distance between the first and second electrodes is greater than a longitudinal length of at least one of the first and second light emitting elements, and the first and second light emitting elements are connected in series between the first and second electrodes.

Abstract: A display device is provided that includes a plurality of sub-pixels. Each sub-pixel includes a light-emitting unit having an illumination area, wherein the illumination area is divided into a plurality of illumination regions, and each illumination region is configured to be illuminated independently. The light-emitting unit emits a light, and a gray level of the light is determined according to the total area of the illumination regions being illuminated.

Abstract: A method for manufacturing an LED display device and an LED display device are provided. The method includes following operations. An LED array substrate and a conversion plate are provided. The LED array substrate includes a driving layer, a plurality of LED chips arranged in an array on a side of the LED array substrate having the driving layer. The conversion plate includes a substrate and a plurality of light conversion blocks, the plurality of light conversion blocks are spaced apart from each other and arranged on the substrate. A side of the conversion plate having the light conversion blocks is adhered with a side of the LED array substrate having the LED chips correspondingly, such that the light conversion blocks are arranged on corresponded top surfaces of the LED chips. The substrate is removed.

Abstract: A full spectrum white light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range from about 490 nm to about 680 nm; and a broadband solid-state excitation source operable to generate broadband excitation light with a dominant wavelength in a range from about 420 nm to about 480 nm. The device is operable to generate white light with a Correlated Color Temperature in a range from about 1800K to about 6800K, a CRI R9 less than 90, a spectrum whose intensity decreases from its maximum value in the orange to red region of the spectrum to about 50% of the maximum value at a wavelength in a range from about 645 nm to about 695 nm, and over a wavelength range from about 430 nm to about 520 nm, a maximum percentage intensity deviation of light emitted by the device is less than 60% from the intensity of light of at least one of a black-body curve and CIE Standard Illuminant D of the same Correlated Color Temperature.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first light-emitting diode (LED) layer including a first LED of a first color type, the first LED layer having a first side and a second side opposite to the first side; a second LED layer over the first LED layer, the second LED layer including a second LED of a second color type, and the second LED layer having a first side and a second side opposite to the first side; and a third LED layer over the second LED layer, the third LED layer including a third LED of a third color type, and the third LED layer having a first side and a second side opposite to the first side; wherein the first color type, the second color type, and the third color type are different from each other.

Abstract: The present invention provides a car lamp, including a light source unit provided with a plurality of semiconductor light emitting devices, and having a planar shape, the light source unit having a light emitting region emitting light and a non-light emitting region formed along an edge of the light emitting region, and a filter unit located to overlap the light emitting region so as to transmit only light of a predetermined wavelength band therethrough, wherein the light emitting region of the light source unit is provided with a plurality of regions, and is configured such that at least one of the plurality of regions selectively emits light.

Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.

Abstract: A light-emitting diode unit for a display including a plurality of pixels each including: first, second, and third light-emitting cells respectively including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; pads electrically connected to the first through third light-emitting cells to independently drive the first through third light-emitting cells; a first wavelength converter for converting a wavelength of light emitted from the first light-emitting cell; and a second wavelength converter for converting a wavelength of light emitted from the second light-emitting cell, in which the first wavelength converter converts a wavelength of light to a longer wavelength than the second wavelength converter, the second light-emitting cell has a greater area than the third light-emitting cell, and the first light-emitting cell has a greater area than the second light-emitting cell.

Abstract: The present disclosure provides a current-driven display, including a substrate and a first electrode layer stacked on the substrate in a stacking direction. The substrate includes a plurality of light-emitting units and a spacer separating each of the plurality of light-emitting units from one another. The first electrode layer includes a first region and a second region. The first region and the second region contact one of the plurality of light-emitting units, respectively, and are separated by the spacer. The current-driven display further includes a second electrode layer, which equipotentially connects the first region and the second region across the spacer. The present disclosure also provides a method for producing a current-driven display.

Abstract: A pixel arrangement structure, a display substrate, a display device, and a mask are provided. The pixel arrangement structure includes: a first repeating unit and a second repeating unit. The first repeating unit includes a first sub-pixel, a second sub-pixel, and two third sub-pixels, and the second repeating unit includes two fourth sub-pixels, a fifth sub-pixel, and a sixth sub-pixel. In a first direction, the two third sub-pixels are between the first sub-pixel and the second sub-pixel, and the two fourth sub-pixels are between the fifth sub-pixel and the sixth sub-pixel. The two fourth sub-pixels are arranged along the first direction, the two third sub-pixels are arranged along a second direction, and the first direction and the second direction are not parallel to each other.

Abstract: A light-emitting device includes: a first light source including a first light-emitting element having a peak emission wavelength in a range of 430 nm to 480 nm; a second light source including a second light-emitting element having a peak emission wavelength in a range of 430 nm to 480 nm; a third light source; and an encapsulant containing a phosphor. In a 1931 CIE chromaticity diagram, the light-emitting device has: a first chromaticity point when only the first light source is operated, a second chromaticity point different from the first chromaticity point when only the second light source is operated, and a third chromaticity point when only the third light source is operated, the third chromaticity point having a y-value larger than a y-value on a straight line passing the first chromaticity point and the second chromaticity point.

Abstract: An array substrate, a display panel and a display device are provided. The array substrate includes a plurality of pixel units, wherein each pixel unit includes a storage capacitor including at least three electrode plates parallel to each other, the at least three electrode plates parallel to each other include a first electrode plate, a second electrode plate and a third electrode plate, the first electrode plate is electrically connected to the second electrode plate, the third electrode plate is disposed between the first electrode plate and the second electrode plate, and the first electrode plate and the second electrode plate each have a portion facing towards the third electrode plate.

Abstract: A pixel structure includes a data line, a first scan line, first and second transistors, first and second power lines, LED elements, a connection pattern, a first insulation layer, and a first conductive pattern. Each of the first transistor and the second transistor has a first end, a control end, and second end. Each LED element has a first electrode and a second electrode. The second power line is electrically coupled to the first electrodes. The connection pattern is electrically coupled between the second end of the first transistor and the control end of the second transistor. The first conductive pattern is disposed above the first insulation layer and electrically coupled between the second electrodes, the second electrodes are electrically coupled to the second end of the second transistor through the first conductive pattern, and the connection pattern and the first conductive pattern are overlapped in an orthogonal projection direction.

Abstract: The present invention provides an epoxy resin composition that can produce a cured product maintaining good dielectric characteristics (low dielectric constant and low dielectric loss tangent), and having high adhesion strength to metal; and also provides a process for producing the same, a cured product obtained by curing the epoxy resin composition, and use thereof. The present invention includes an epoxy resin composition comprising an epoxy resin, an acid anhydride-based curing agent, and a curing accelerator, the epoxy resin being represented by the formula (1): wherein X is a divalent group obtained by removing two hydrogen atoms from a hydrocarbon ring, or a divalent group represented by the formula (2): wherein Y is a bond, a C1-6 alkylene group, etc.; R1 is the same or different, and is a C1-18 alkyl group, etc., R2 is the same or different, and is a C1-18 alkylene group, etc., R3 is the same or different, and is a C1-18 alkyl group, etc.

Abstract: A small projector uses an ultra-dense array of gallium nitride (GaN) LEDs. However, epitaxial growth of GaN typically produces a GaN region that is 5 um or thicker. To achieve high pixel density, the LEDs have small area, so the resulting LED structures are tall and skinny. This is undesirable because it makes further processing more difficult and has higher optical losses. As a result, it is beneficial to reduce the thickness of the GaN region. In one approach, a wafer with the GaN region on substrate is bonded to a backplane wafer containing LED driver circuits. The substrate is then separated from the GaN region, exposing a buffer layer of the GaN region. The GaN region is thinned and then patterned into individual LEDs. Typically, the buffer layer is removed entirely.

Abstract: A micro LED display panel includes a blue LED layer, a green LED layer, and a red LED layer. The blue LED layer, the green LED layer, and the red LED layer are in a stacked formation. The blue, the green, and the red LED layers each include a plurality of micro LEDs spaced apart from each other. The composition of the layers is such that light emitted from all but the bottom layer is able to pass through transparent material in other layers before exiting the panel and being viewed.

Abstract: A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Abstract: A device including a phosphor layer having a plurality of air gaps arranged within the phosphor layer to block lateral light transmission. The phosphor layer can be sized and positioned to be continuously extend over a plurality of LED emitter pixels.

Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

Abstract: A display apparatus and a method of manufacturing the same are disclosed. The display apparatus includes at least one light emitting diode chip, a conductive portion disposed under the light emitting diode chip and coupled to the light emitting diode chip, and an insulating material surrounding the conductive portion. The conductive portion includes a first conductive portion and a second conductive portion, and the insulating material is formed to expose at least a portion of the upper surfaces of the first conductive portion and the second conductive portion.

Abstract: A light emitting device includes: a light emitting element; a first reflecting member containing reflecting particles, and covering the upper surface of a base while exposing a light extraction surface of the light emitting element; a first cover member having a lower concentration of reflecting particles than the first reflecting member and covering the first reflecting member and a portion of lateral surfaces of the light emitting element while exposing the light extraction surface of the light emitting element; a second cover member covering a portion of the lateral surfaces of the light emitting element; a second reflecting member surrounding the second cover member in a top view and contacting the second cover member and the first reflecting member; the second reflecting member having a narrow-width portion being in contact with the first reflecting member and a wide-width portion located above the narrow-width portion in a cross-sectional view.

Abstract: The present invention provides an LED module that can prevent breakage of an LED chip due to pulse lighting for a flash when the LED module is used in a flashing lamp. An LED module (10) for flashing lamp includes: an LED substrate (13); plural LEDs (12); and plural resin layers (11). In the LED module (10), the LEDs (12) are mounted on a mounting surface of the LED substrate (13). Each resin layer (11) is stacked on a surface of each LED (12) opposite to the LED substrate (13). Adjacent resin layers (11) stacked on the LEDs (12) are separated from each other.

Abstract: In a pixel, at least two sets of a pair of wiring lines, that is connected to a pair of electrodes of a micro-LED and is coupled to a pixel circuit, are disposed, the pixel circuit has a first LED drive circuit that supplies a current to the micro-LED and a second LED drive circuit that substitutes for the first LED drive circuit, and the pixel circuit also has a switching device that short-circuits the pair of wiring lines.

Abstract: A system for projecting images, configured to implement a sequential type colour projection. The system includes an emissive matrix display device; and a wavelength conversion coloration wheel. The coloration wheel includes a transparent zone, and a first photoluminescent zone configured to absorb a blue light beam and to emit in response a beam including a green component and a red component. The system further includes a selection device for blocking alternately the green component or the red component, including at least one dichroic mirror.

Abstract: A light-emitting device includes a first light-emitting element, a second light-emitting element having a peak emission wavelength different from that of the first light-emitting element, a light-guide member covering a light extracting surface and lateral surfaces of the first light-emitting element and a light extracting surface and lateral surfaces of the second light-emitting element, and a wavelength conversion layer continuously covering the light extracting surface of each of the first and second light-emitting elements and disposed apart from each of the first and second light-emitting elements, and a first reflective member covering outer lateral surfaces of the light-guide member. An angle defined by an active layer of the first light-emitting element and an active layer of the second light-emitting element is less than 180° at a wavelength conversion layer side.

Abstract: An electronic device stretchable from a first state to a second state includes a substrate, a plurality of light emitting groups, and a plurality of signal pads. The substrate has a first region and a second region. The light emitting groups are disposed on the first region. The signal pads are disposed on the second region. When the electronic device is stretched from the first state to the second state, the first region has a first stretching ratio (R1) and the second region has a second stretching ratio (R2), and R1 is greater than R2.

Abstract: An embodiment relates to a light emitting device package and a lighting apparatus having the same. According to the embodiment, a light emitting device package includes a first lead frame; a second lead frame spaced apart from the first lead frame; a body coupled to the first lead frame and the second lead frame and includes a first cavity which exposes a portion of the upper surface of the first lead frame, a second cavity which exposes a portion of the upper surface of the second lead frame, and a spacer which is disposed between the first lead frame and the second frame; at least one light emitting device disposed in the first cavity; and a protection device disposed in the second cavity. The second cavity is disposed on a first inside surface of the first cavity and the first inside surface is connected to an upper surface of the spacer, and an area of a bottom surface of the first cavity is equal to or less than 40% of entire area of the body.

Abstract: A light emitting device includes a substrate layer, a first electrode layer, a light emitting layer, and a patterned second electrode layer. The patterned second electrode layer includes a periodic grating structure having a grating period ?g less than or equal to 200 nm and the patterned second electrode layer and the light emitting layer are separated by at most 100 nm.