Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.

Abstract: A light-emitting device including at least one light-emitting unit, a wavelength conversion adhesive layer, and a reflective protecting element is provided. The light-emitting unit has an upper surface and a lower surface opposite to each other. The light-emitting unit includes two electrode pads, and the two electrode pads are located on the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface. The wavelength conversion adhesive layer includes a low-concentration fluorescent layer and a high-concentration fluorescent layer. The high-concentration fluorescent layer is located between the low-concentration fluorescent layer and the light-emitting unit. The width of the high-concentration fluorescent layer is WH. The width of the low-concentration fluorescent layer is WL. The width of the light-emitting unit is WE. The light-emitting device further satisfies the following inequalities: WE<WL, WH<WL and 0.8<WH/WE?1.2.

Abstract: A display apparatus includes a substrate, a display area including a plurality of pixels, a non-display area outside the display area, a first dam surrounding the display area, a second dam surrounding the first dam, a third dam between the display area and the first dam. The third dam including a first insulating layer and a second insulating layer on the first insulating layer, and a thin film encapsulation layer covering the display area, the thin film encapsulation layer including at least one inorganic encapsulation layer and at least one organic encapsulation layer. The third dam includes a first region in which the second insulating layer is spaced along a direction in which the first insulating layer extends, and a second region in which the second insulating layer is continuously present along the direction in which the first insulating layer extends, the second region not overlapping the first region.

Abstract: The present disclosure discloses a light emitting diode (LED) package structure, a heat-dissipating substrate, a method for manufacturing an LED package structure, and a method for manufacturing a heat-dissipating substrate. The method for manufacturing the heat-dissipating substrate includes: providing a metal plate having a top surface and a bottom surface; implementing an etching process on the metal plate so as to form a first heat-dissipating block, a second heat-dissipating block, and a heat-dissipating plate spaced apart from each other; and filling an insulating material between the heat-dissipating plate and the first heat-dissipating block and between the heat-dissipating plate and the second heat-dissipating block so as to electrically isolate the heat-dissipating plate, the first heat-dissipating block, and the second heat-dissipating block from each other.

Abstract: An electronic device includes a first electronic module including a first electronic unit and a second electronic unit. The first electronic unit includes a plurality of first electronic elements arranged in a plurality of rows, wherein a top row of the plurality of first electronic elements defines a first base line. The second electronic unit includes a plurality of second electronic elements arranged in a plurality of rows, wherein a top row of the plurality of second electronic elements defines a second base line. A shifting distance S between the first base line and the second base line satisfies 0<S?(P1+P2)/4, wherein P1 is defined by two adjacent first electronic elements located in the top row and its adjacent row, and P2 is defined by two adjacent second electronic elements located in the top row and its adjacent row.

Abstract: A method for bending a GOA region of a flexible display panel is disclosed. The flexible display panel includes a substrate with an edge having a GOA bendable region. The method includes: an inflating assembly adheres to the GOA bendable region and a serving motor drives the inflating assembly to rotate and bend the GOA bendable region to the back surface of the substrate; and the inflating assembly inflates to press the GOA bendable region against the back surface of the substrate. A flexible display panel using the abovementioned method is also disclosed.

Abstract: An active device array substrate includes: a substrate, a switch device, an inter-layer dielectric layer, an insulation bump, a conductive layer, and a pixel electrode. The switch device is located on the substrate. The inter-layer dielectric layer is located on the switch device, and the inter-layer dielectric layer has at least one opening, where the opening does not cover at least one part of a drain electrode of the switch device. The insulation bump covers at least partially the opening. The conductive layer is located on a top surface and a side wall of the insulation bump, and is electrically connected to the drain electrode of the switch device through the opening. The pixel electrode is electrically connected to the conductive layer.

Abstract: An electronic product with a light emitting function is provided. The electronic product includes a supporting structure, a light emitting structure and a cavity. The light emitting structure is bonded on the supporting structure. The light emitting structure includes a film, a conductive circuit and a light emitting device. The conductive circuit is formed on the film. The conductive circuit is enclosed between the supporting structure and the film. The light emitting device is disposed on the conductive circuit. The cavity is formed between the supporting structure and the light emitting structure, and the light emitting device is received in the cavity.

Abstract: A light-emitting device and a display device using the same. The light-emitting device improves the reliability of a process of disposing light-emitting devices. The light-emitting device is configured to ensure electrical connections even if the light-emitting device is inverted while being disposed on a substrate. The light-emitting device includes an n-type semiconductor layer and a p-type semiconductor layer. N-type electrodes and p-type electrodes are disposed on both sides of top and bottom surfaces of the light-emitting device. Contact holes are provided to electrically connect one of the n-type electrodes to the n-type semiconductor layer and one of the p-type electrodes to the p-type semiconductor layer. When the light-emitting device is inverted while being disposed on a substrate, the light-emitting device operates ordinarily, thereby reducing the defect rate of a display device.

Abstract: Provided is a semiconductor optical device with light extraction efficiency or light collecting efficiency higher than that of conventional devices and with a reduced peeling ratio of a wiring electrode portion, and a method of manufacturing the same. In the semiconductor optical, a wiring electrode portion 120 is provided on a surface of a semiconductor layer 110 that serves as a light emitting surface or a light receiving surface, the line width W1 of the wiring electrode portion 120 is 2 ?m or more and 5 ?m or less, the wiring electrode portion 120 has a metal layer 121 on the semiconductor layer 110 and a conductive hard film 122 on the metal layer 121, and the conductive hard film 122 is harder than the metal layer 121.

Abstract: A light emitting device package is discussed. The light emitting device package includes a first frame having a first through hole; a second frame having a second through hole; a connecting frame diagonally extending in the light emitting device package from the first frame to the second frame; a first light emitting device including a first electrode pad and a second electrode pad, the second electrode pad being disposed on the first through hole of the first frame; and a second light emitting device including a third electrode pad and a fourth electrode pad, the third electrode pad being disposed on the second through hole of the second frame.

Abstract: A light emitting device includes: a light-emitting element; a resin package including a plurality of leads including first and second leads, a first resin portion, a second resin portion extending around an element mounting region, and a third resin portion, wherein the plurality of leads and the first resin portion define a recess having an inner side-wall surface; a light-reflective member being located between the inner side-wall surface and the second resin portion inside the recess; and an encapsulant located in a region of the recess that is surrounded by the light-reflective member, the encapsulant covering the second resin portion and the light-emitting element. The second resin portion has a depression in a surface thereof. A part of the encapsulant is located inside the depression of the second resin portion.

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract: A method of manufacturing a light-emitting element includes: forming a plurality of rod-shaped layered structures by performing steps including: forming a first conductive-type semiconductor layer on a substrate, forming, on the first conductive-type semiconductor layer, an insulating film defining a plurality of openings and a plurality of rods of a first conductive-type semiconductor, wherein each of the rods is disposed through a respective one of the plurality of openings, forming a light-emitting layer covering outer surfaces of the plurality of rods, and forming a second conductive-type semiconductor layer covering outer surfaces of the light-emitting layer; forming a photoresist pattern covering a portion of the plurality of the rod-shaped layered structures; removing a portion of the insulating film in a region that is not covered by the photoresist pattern; and removing a portion of the plurality of rod-shaped layered structures in the region that is not covered by the photoresist pattern.

Abstract: One embodiment relates to a light emitting device which is free from electrostatic discharge by using an electrostatic discharge suppressing pattern including a resin having particles conductive and dispersed therein, the light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode connected with the first conductive semiconductor layer; a second electrode connected with the second conductive semiconductor layer; and an electrostatic discharge suppressing pattern, which is overlapped with the first electrode and the second electrode, and of which first particles are dispersed in the resin so as to cover a gap between the first electrode and the second electrode.

Abstract: A method of thinning a display panel and a display device are provided, to solve the technical issue in the related art that a color filter substrate of an ultrathin display panel is of a lower strength if the color filter substrate is too thin. According to the method of thinning the display panel, the intermediate layer is coated onto the surface of the first substrate away from the second substrate, the protection adhesive is attached on the intermediate layer, and the second substrate is chemically thinned at one side thereof, thereby protecting the first substrate from being chemically thinned during the chemical thinning.

Abstract: A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.

Abstract: Disclosed herein is a highly reliable light emitting diode. In the light emitting diode, a connector connecting light emitting cells to each other is spaced apart from bump pads in a lateral direction so as not to overlap each other. Accordingly, it is possible to provide a chip-scale flip-chip type light emitting diode having good properties in terms of heat dissipation performance and electrical reliability.

Abstract: A UV LED package and an LED module including the same. The UV LED package includes an upper semiconductor layer; a mesa disposed under the upper semiconductor layer, having an inclined side surface, and comprising an active layer and a lower semiconductor layer; a first insulation layer covering the mesa and having an opening exposing the upper semiconductor layer; a first contact layer contacting the upper semiconductor layer through the opening of the first insulation layer; a second contact layer formed between the mesa and the first insulation layer and contacting the lower semiconductor layer; a first electrode pad and a second electrode pad disposed under the first contact layer and electrically connected to the first contact layer and second contact layer, respectively; and a second insulation layer located between the first contact layer and the first and second electrode pads, wherein the active layer emits UV light having a wavelength of 405 nm or less.

Abstract: The present disclosure discloses a light emitting diode (LED) package structure, a heat-dissipating substrate, and a method for manufacturing a heat-dissipating substrate. The heat-dissipating substrate includes a first heat-dissipating block, a heat-dissipating plate and a second heat-dissipating block, spaced apart each other, and a lateral insulating member connected to thereof so as to electrically isolate the first heat-dissipating block, the second heat-dissipating block, and the heat-dissipating plate from each other. The first heat-dissipating block, the second heat-dissipating block, and the heat-dissipating plate each has two protrusions respectively formed on two opposite surfaces thereof. A height of each of the protrusions is at a micro level.

Abstract: An electronic device includes a first electronic module, a second electronic module, and a shifting distance S. The first electronic module includes first electronic units arranged in rows, wherein the top row of first electronic units defines the first base line. The second electronic module is adjacent to the first electronic module. The second electronic module includes second electronic units arranged in rows, wherein the top row of second electronic units defines a second base line. There is a shifting distance S between the first base line and the second base line. The shifting distance S satisfies 0<S?(P1+P2)/4, wherein P1 is defined by two adjacent first electronic units located in the top row and its adjacent row, and P2 is defined by two adjacent second electronic units located in the top row and its adjacent row.

Abstract: A light emitting device includes a light emitting element and a mounting substrate on which the light emitting element is mounted such that the mounting substrate faces an upper side of the light emitting element. The light emitting element includes a substrate, first and second light emitting cells each including a semiconductor layered structure that includes an n-side semiconductor layer and a p-side semiconductor layer in order from a substrate side, a first insulating layer, wiring electrodes, and a second insulating layer. One of the wiring electrodes is electrically connected to the n-side semiconductor layer of the first light emitting cell and to the p-side semiconductor layer of the second light emitting cell. The mounting substrate includes wiring terminals, one of which is electrically connected to the n-side semiconductor layer of the first light emitting cell and to the p-side semiconductor layer of the second light emitting cell.

Abstract: An optoelectronic device comprises a substrate; a first optoelectronic unit formed on the substrate; a second optoelectronic unit formed on the substrate; a plurality of third optoelectronic units formed on the substrate, electrically connected to the first optoelectronic unit and the second optoelectronic unit; a plurality of first electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; a plurality of second electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; an optical layer surrounding the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units in a top view of the optoelectronic device; a third electrode formed on the first optoelectronic unit and one of the plurality of third optoelectronic units; and a fourth electrode formed on the second optoelectronic unit and another one

Abstract: Provided is a 3D micro lithography-printing system using tilting and rotational UV-LEDs, in which a lithography module provided with LED lens for irradiating ultraviolet light for lithography is provided rotatable or revolvable in a left and right horizontal direction, and a substrate stage with a lithography object mounted thereto is provided movable forward and backward, changeable in forward and backward angles, and horizontally rotatable left and right, and thus, by changing the irradiation direction of ultraviolet light in a three-dimensional manner, a high-aspect ratio pillar and a 3D structure can be formed. In addition, various types of 3D structure can also be formed through a multi-layer lithography to a lithography object, and micro-forming within a range of approximately 5 ?m is also possible.

Abstract: A light emitting device includes a light emitting element, a covering member and a metal layer. The light emitting element includes a semiconductor layer having a main light emission surface and an electrode formation surface on an opposite side of the main light emission surface, and a pair of electrodes disposed on the electrode formation surface. The covering member covers a side surface of the light emitting element. An outer surface of the covering member defines a recess. The metal layer is connected to the pair of electrodes. The metal layer is arranged in the recess.

Abstract: A first light emitting unit includes a hole injection layer, a first hole transport layer, and a first light emitting layer. A second light emitting unit includes a hole injection layer, a second hole transport layer, a third hole transport layer, a third hole transport layer, and a second light emitting layer. The second hole transport layer is formed on the hole injection layer and includes a first hole transporting material. The third hole transport layer is formed on the second hole transport layer and includes a second hole transporting material. A fourth hole transport layer is formed on the third hole transport layer and includes the same material as the second hole transport layer, that is, the second hole transporting material. The third hole transport layer is formed by using a coating method, and the fourth hole transport layer is formed by a vapor deposition method.

Abstract: A display device includes a substrate, and a first light-emitting diode element disposed over the substrate and having a first light-emitting path. The display device further includes a light-emitting angle changing layer disposed over the first light-emitting diode element. The display device further includes a second light-emitting diode element disposed over the substrate. The second light-emitting diode element is disposed at a position other than the region corresponding to the first light-emitting path. The first light-emitting diode element has a first light-emitting angle, the second light-emitting diode element has a second light-emitting angle, and the second light-emitting angle is greater than the first light-emitting angle.

Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer, and a partially exposed region of an upper surface of the first conductive type semiconductor layer; a transparent electrode disposed on the second conductive type semiconductor layer; a first insulation layer including a first opening and a second opening; a metal layer at least partially covering the first insulation layer; a first electrode electrically connected to the first conductive type semiconductor layer; and a second electrode electrically connected to the transparent electrode.

Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.

Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter.

Abstract: A display device and a display panel are provided. The display panel includes an array panel and a plurality of display devices. The display device includes a display device main body and a magnetic member disposed on the display device main body. The display device can be transferred to the array panel under a force of a magnetic field outside of the display device. The present disclosure can efficiently transfer the display devices to the array panel.

Abstract: It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is odd multiples of quarter wavelength with a range of plus or minus 10% thereof by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.

Abstract: Disclosed is a light-emitting device.

Abstract: A method is presented for fabricating a light emitting diode (LED) device with a stratified quantum dot (QD) structure. The method provides an LED and a stratified QD structure is formed as follows. A first liquid precursor is deposited overlying the LED emission surface to form a transparent first barrier layer. A second liquid precursor is deposited overlying the first barrier layer to form a first layer of discrete QDs. A third liquid precursor is deposited overlying the first layer of QDs to form a transparent second barrier layer. Subsequent to each barrier layer liquid precursor deposition, an annealing is performed to cure the deposited precursor. The first and second barrier layers act to encapsulate the first layer of QDs. The LED emits a first wavelength of light, and the first layer of QDs converts the first wavelength of light to a first color of light in the visible spectrum.

Abstract: A patterned sapphire substrate has a first surface and a second surface opposite to each other, in which, the first surface of the substrate is formed by arranging a plurality of interspaced patterns, wherein, the patterns have a top surface, a bottom surface and a plurality of side surfaces and at least one concave region sandwiched between the adjacent side surfaces and the top surface, where, depth and width of the concave region gradually decrease from the top to the bottom of the pattern. The concave region on the pattern surface of the patterned sapphire substrate enlarges light reflection area, thus improving light extraction efficiency of the patterned sapphire substrate.

Abstract: A light emitting device includes a light emitting element, a covering member and a metal layer. The light emitting element includes a semiconductor layer having a main light emission surface and an electrode formation surface on an opposite side of the main light emission surface, and a pair of electrodes disposed on the electrode formation surface. The covering member covers a side surface of the light emitting element. The metal layer is connected to the pair of electrodes. The metal layer covers an outer surface of the covering member.

Abstract: A light module, in particular for lighting and/or signalling, in particular for a motor vehicle, including a light source and a plurality of light-emitting units of submillimetric size, at least a first set of light-emitting units projecting from a first face of a first substrate; and, a first carrier designed to dissipate heat from the first set of light-emitting units, the first carrier being linked to a second face of the first substrate; wherein the first carrier is furthermore designed to form a first electrode of the first set of light-emitting units so as to conduct a current to the first set of light-emitting units.

Abstract: A curvature-adjustable display device includes: a detection module configured to detect a curvature of the display device and send the curvature; a backlight module including a plurality of backlight substructures, in which each backlight substructure is configured to provide backlight for different areas of the display device according to a backlight driving parameter matched with the backlight substructure; a driver module which is configured to receive the curvature sent by the detection module, determine the backlight driving parameter required by each backlight substructure according to the received curvature and a preset corresponding relationship between the curvature and the backlight driving parameter, and send the backlight driving parameter to each corresponding backlight substructure, respectively, so that the backlight substructures can provide backlight for different areas of the display device according to the backlight driving parameter matched with the backlight substructure; and a display pa

Abstract: An electronic device including a base structure, a first pattern having at least one projection disposed on the base structure, a first conductive layer including a first portion disposed on the base structure and a second portion disposed on the first pattern and connected to the first portion, an insulating layer disposed on the first conductive layer covering the first portion and exposing the second portion, and a second conductive layer provided on the insulating layer and overlapping the first conductive layer. The second conductive layer is spaced apart from the first portion and is in contact with the second portion. Methods of manufacturing an electronic device capable of reducing the number of process steps in the manufacturing process are also disclosed.

Abstract: Disclosed are an organic electroluminescent device and a preparation method thereof. The organic electroluminescent device comprises an anode, a hole transport layer, an organic light-emitting layer, an electron transport layer and a cathode. An organic metal complex and an active metal compound are doped in the electron transport layer, wherein the active metal compound is an alkali metal complex, an alkali earth metal complex or a lanthanide metal compound. The preparation method thereof includes the following steps: etching an anode pattern, and evaporating a hole transport layer and an organic light-emitting layer on an ITO glass substrate in order; and co-evaporate an electron transport material, an organic metal complex and an active metal compound to form an electron transport layer; and evaporating a cathode on the electron transport layer.

Abstract: A method of manufacturing an organic light-emitting display apparatus includes: forming a lift-off layer on a substrate including a first electrode, the lift-off layer including a fluoropolymer; forming a pattern layer on the lift-off layer; etching the lift-off layer between patterns of the pattern layer by utilizing a first solvent to expose the first electrode; forming an organic functional layer on the first electrode and the pattern layer, the organic functional layer including an emission layer; removing remaining portions of the lift-off layer by utilizing a second solvent; and forming a second electrode on the organic functional layer.

Abstract: The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 ?m to 50 ?m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

Abstract: A light-emitting device is disclosed that includes a semiconductor structure having an active region disposed between an n-type layer and a p-type layer; a wavelength converter formed above the semiconductor structure; an insulating side coating formed around the semiconductor structure; and a reflective side coating formed around the wavelength converter above the insulating side coating, the reflective side coating having a top surface that is flush with a top surface of the wavelength converter.

Abstract: A light emitting element according to an embodiment includes a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are disposed on the substrate; a reflective layer which is disposed on the light emitting structure and has first and second areas neighboring each other in a horizontal direction; a first electrode which is disposed in at least a portion of the first area of the reflective layer with passing through the second conductive semiconductor layer and the active layer and extending to the first conductive semiconductor layer; a first insulating layer disposed between the first electrode and the side of the light emitting structure and between the first electrode and the reflective layer; a diffusion barrier layer disposed in the second area of the reflective layer; a second insulating layer disposed on the first electrode and the diffusion barrier layer; and first and second bonding layers which pass

Abstract: Methods and apparatus for use in the manufacture of a display device including pixels. Each pixel includes a plurality of sub-pixels, each sub-pixel configured to provide light of a given wavelength. The method may include: performing, using a pick up tool (PUT), a first placement cycle comprising picking up first light emitting diode (LED) dies, and placing a first LED die on a substrate of the display device at a location corresponding to a sub-pixel the display device. The method further includes performing one or more subsequent placement cycles comprising picking up a second LED die, and placing the second LED die on the substrate of the display device at a second location corresponding to the sub-pixel of the display device. Multiple first and second LED dies may be picked and placed during each placement cycle to populate each pixel of the display device to provide redundancy of LED dies at each sub-pixel.

Abstract: The invention relates to an optoelectronic device (45) including: light-emitting diodes (LED) including semiconductor elements (24); current-limiting components (50), wherein each component is connected in series to one of the semiconductor elements and has a resistance that increases with the strength of the current.

Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.

Abstract: The present invention relates to a new method, system and apparatus for light emitting diode (LED) packages. An object of the present invention is to provide an LED package having reduced components, a superior heat dissipation property and a compact structure that is easy to assemble, does not largely restrict use of conventional equipment for its manufacture, and is compatible with implementation within present illumination devices packaging.

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

Abstract: An array substrate includes a plurality of gate lines and a plurality of data lines arranged to cross each other, a plurality of pixel electrodes disposed within areas defined by the gate lines and the data lines, and shielding electrodes provided over the gate lines, wherein the shielding electrodes cover at least edge portions of the gate lines close to the pixel electrodes; at least every three pixel electrodes constitute a pixel unit, and at least one pixel electrode in each pixel unit has a length substantially in an extension direction of the gate lines larger than a length thereof substantially in an extension direction of the data lines; the respective pixel electrodes constituting the same pixel unit are connected with different data lines correspondingly; and there are two data lines in a gap between every two adjacent pixel units.