Abstract: A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al2Li2O2N2]:Eu, crystallized in the tetragonal space group P42/m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

Abstract: There is provided a display backlight (604), including an excitation source (644) for generating blue light (650); and a wavelength converter (654) being a unitary construction including a combination of a wavelength selective filter layer (658) bonded to a photoluminescence layer (660), where the photoluminescence layer (658) includes a green photoluminescence material and a red photoluminescence material; and where the wavelength selective filter layer (658) is transmissive to blue light and reflective to green and red light.

Abstract: A flexible display panel. The flexible display panel includes: a flexible substrate; a display element arranged on the flexible substrate; and a packaging layer covering the display element, the packaging layer including an inorganic thin film and an organic thin film that are stacked alternately, in which two protrusion structures that are engaged with each other are arranged between at least two adjacent thin films of the packaging layer.

Abstract: A light emitting device of one embodiment of the present disclosure includes: a substrate; a light emitting element disposed above the substrate, and having electrodes on respective upper surface and lower surface of the light emitting element; and a light shielding layer provided between the substrate and the light emitting element.

Abstract: An optoelectronic component that emits electromagnetic radiation from a radiation exit surface of the optoelectronic component includes a radiation-emitting semiconductor chip that produces electromagnetic radiation, and a marker element applied to the radiation exit surface of the optoelectronic component, the marker element including a dye substance that can be removed from the radiation exit surface using a solvent and/or is permeable to the electromagnetic radiation of the optoelectronic component, wherein the dye substance includes a resin into which fluorescent particles are introduced that convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, the first wavelength range and the second wavelength range being within the ultraviolet spectral range.

Abstract: A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body includes a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween, the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component, the carrier includes a mirror layer disposed between the semiconductor body and the metallic carrier layer, the carrier has a compensating layer directly adjacent to the metallic carrier layer and is configured to compensate for internal mechanical strains in the component, and the compensating layer is arranged between the semiconductor body and the metallic carrier layer.

Abstract: Even when a stress is applied due to energization or switching operation, a connection state of electrode layers can be appropriately maintained. A semiconductor device includes a semiconductor layer of first conductivity type, an upper surface structure formed on a surface layer of the semiconductor layer, and an upper surface electrode formed over the upper surface structure. The upper surface electrode includes a first electrode formed on an upper surface of the semiconductor layer, and a second electrode formed over an upper surface of the first electrode. The first concave portion is formed on the upper surface of the first electrode. A side surface of the first concave portion has a tapered shape. The second electrode is formed over the upper surface of the first electrode including an inside of the first concave portion.

Abstract: A light emitting device comprises a semiconductor diode structure configured to emit light, a substrate that is transparent to light emitted by the semiconductor diode structure, and a reflective nanostructured layer. The reflective nanostructured layer may be disposed on or adjacent to a bottom surface of the substrate and configured to reflect toward and through a side wall surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence. Alternatively, the reflective nanostructured layer may be disposed on or adjacent to at least one sidewall surface of the substrate and configured to reflect toward and through the bottom surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface of the semiconductor light emitting device. A proportion of an area occupied by the multiple cone-shaped parts per a unit area of the light extraction surface is not less than 65% and not more than 95% in a plan view of the light extraction surface, and an aspect ratio h/p defined as a proportion of a height h of the cone-shaped part relative to a distance p between apexes of adjacent cone-shaped parts is not less than 0.3 and not more than 1.0.

Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.

Abstract: A wavelength conversion component includes a plurality of wavelength conversion members, a plurality of transmission type optical members respectively disposed on the wavelength conversion members, and a first member including a plurality of wall portions respectively located between adjacent ones of the wavelength conversion members. A light emitting device includes such wavelength conversion component.

Abstract: A display that exhibits improved anti-counterfeiting effects. The display includes an uneven-structure-forming layer having an uneven structure on one surface and a reflecting layer that covers at least part of an unevenly structured surface. In the display, the uneven-structure-forming layer includes a first region group including a plurality of first regions, each first region including a flat part and a plurality of convexities or a plurality of concavities, the top surface of each of the convexities or the bottom surface of each of the concavities is substantially parallel to a surface of the flat part; distances between the centers of adjacent convexities or concavities are not equal; the convexities have a uniform height, or the concavities have a uniform depth; the first region group is formed, with the first regions arrayed inside at a regular pitch.

Abstract: A light emitting device includes a light emitting diode chip, a light transmitting member, a white barrier member, and a conductive adhesive member. The light emitting diode chip has a bump pad formed on the lower surface thereof. The light transmitting member covers the side surfaces and the upper surface of the light emitting diode chip, and the upper surface of the light transmitting member has a rectangular shape having long sides and short sides. The conductive adhesive member is formed to extend through the white barrier member from the bottom of the light emitting diode chip. The upper surface of the conductive adhesive member is connected to the bump pad of the light emitting diode chip, and the lower surface of the conductive adhesive member is exposed at the lower surface of the white barrier member.

Abstract: An LED device includes: a first semiconductor layer of a first type; a second semiconductor layer of a second type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light; and a filter formed on the second semiconductor layer and configured to transmit light in the second wavelength band within the first wavelength band. The filter includes a defect layer, first refractive layers, and second refractive layers having a refractive index greater than a refractive index of the first refractive layers, the first refractive layers and the second refractive layers are formed alternately on one side and other side of the defect layer. A thickness of the defect layer is determined based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer.

Abstract: Provided is a micro-LED device, comprising: a light emitting unit comprising a light emitting layer having a first end surface, a second end surface opposite to the first end surface, and a lateral surface between the first end surface and the second end surface; a P-type semiconductor layer on the first end surface; and an N-type semiconductor layer on the second end surface; a transparent insulating layer covering at least the lateral surface of the light emitting layer; and a reflecting layer on a side of the transparent insulating layer away from the light emitting unit, wherein the transparent insulating layer insulates the light emitting unit from the reflecting layer, and the reflecting layer covers at least the lateral surface of the light emitting layer.

Abstract: A light source device that includes a light device assembly and a monolithic lens. The light device assembly includes a first substrate with opposing top and bottom surfaces and a plurality of cavities formed into the top surface, a plurality of light source chips each disposed at least partially in one of the plurality of cavities and each including a light emitting device and electrical contacts, and a plurality of electrodes each extending between the top and bottom surfaces and each electrically connected to one of the electrical contacts. The monolithic lens is disposed over the top surface of the first substrate, and includes a unitary substrate with a plurality of lens segments each disposed over one of the light source chips.

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

Abstract: The present invention discloses an array substrate, a display panel, and a manufacturing method of the display panel. The display panel includes the array substrate and a light-emitting element. The array substrate includes a substrate layer, a driving circuit layer, and a cover layer stacked in order from bottom to top. The cover layer is a gray light-absorbing material for absorbing ambient light and reflected light of the driving circuit layer.

Abstract: A display panel including a substrate, a buffer insulating layer, a plurality of pads, and a plurality of light emitting diodes is provided. The substrate has a display area and a peripheral area adjacent to the display area. The buffer insulating layer is disposed on the substrate. The Young's modulus of the buffer insulating layer is less than 10 GPa. The pads are located on the buffer insulating layer and disposed on the display area of the substrate. The light emitting diodes are electrically connected to the pads and bonding to the display area of the substrate by the pads. The buffer insulating layer is located between the light emitting diodes and the substrate. A normal projection of the light emitting diodes on the substrate is at least partially overlapped with a normal projection of the buffer insulating layer on the substrate.

Abstract: A display module includes a substrate, a plurality of LEDs that are disposed on the substrate and irradiate light, and a light blocking layer that covers the plurality of LEDs, and fills intervals among the plurality of LEDs, each interval of the intervals being a distance between two adjacent LEDs of the plurality of LEDs, and wherein the light blocking layer includes a plurality of openings formed such that a top surface of each of the plurality of LEDs is exposed.

Abstract: Disclosed in the present invention are a novel organometallic complex and an application thereof in organic electronic devices, particularly in organic phosphorescent light emitting diodes. The present invention further relates to organic electronic devices, in particular organic light emitting diodes (OLEDs), that comprise the organometallic complex according to the present invention, and an application thereof in display and illumination technologies. By means of optimizing the structure of a device and changing the concentration of the metal complex in a matrix thereof, optimal device performance may be achieved, facilitating the implementation of a high-efficiency, high-brightness and high-stability OLED devices, and providing a better material option for full-color display and illumination applications.

Abstract: A medical imaging system, is formed of a lighting module, preferably using a single LED. The LED illuminates a reflection chamber, located to receive light from the LED, said reflection chamber terminating in a fiber interfacing surface. An optical fiber, connects to the fiber interfacing surface, and receives light therefrom when said LED is energized. The optical fiber has a first surface connected to the fiber interfacing surface, and has a second surface at an opposite end of the optical fiber from the first surface. A light guide, has a first end, optically coupled to the second end of said optical fiber, and the light guide directs light from the first end into a cone shaped surface at a second end, that directs light away from a center of the cone shaped surface into a hollow cylindrical shape of light, creating an illumination by the light at a distal end of the hollow cylindrical shape opposite the first end.

Abstract: The present disclosure discloses a display substrate, a production method thereof and a display device. The display substrate includes: a base substrate, a pixel defining layer located on the base substrate, and an organic functional layer located on the pixel defining layer, where the pixel defining layer has opening areas for defining light emitting areas of respective sub-pixels, and contains photo-induced deforming particles; and the organic functional layer covers the opening areas and includes a plurality of parts corresponding to the respective sub-pixels one by one, and the plurality of parts are spaced from each other.

Abstract: A color calibration viewer used in color calibration, wherein: the relative intensity at a wavelength of 505 nm is 0.80 or more and 0.95 or less, and the relative intensity at a wavelength of 620 nm is 0.65 or more and 0.80 or less, where 1 designates the optical intensity of a peak top in a first wavelength region at a wavelength of 440 nm or more and 470 nm or less; and the ratio (A/B) of A and B is 1.00 or more and 1.46 or less, where A designates the optical intensity at a wavelength of 505 nm, and B designates the optical intensity at a wavelength of 620 nm.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: Disclosed are a display substrate and a manufacturing method therefor and a display device thereof. The display substrate includes: a drive backplate, and a plurality of micro LEDs and a retaining wall structure on the drive backplate; wherein a center of a light-emitting layer in the micro LED deviates from a center of the micro LED; the retaining wall structure is of an annular shape; the retaining wall structure corresponds to at least one micro LED in the display substrate; and a center of a surrounding region of the retaining wall structure in the drive backplate is located within a circumscribing region of a region where a light-emitting layer of the at least one micro LED is located.

Abstract: A method of manufacturing a light emitting device includes: mounting a light emitting element on a substrate; disposing a light shielding frame on a sheet, the light shielding frame having an opening; disposing a plate-shaped light transmissive member in the opening, the plate-shaped light transmissive member having a first face and a second face opposite the first face, wherein an outer perimeter of the first face is smaller than an inner perimeter of the opening; forming a light guide support member by filling the space with a first light reflecting member; bonding the light guide support member by bonding an upper face of the light emitting element and the second face of the light transmissive member; and forming a second light reflecting member surrounding the light emitting element by filling the space between the substrate and the light shielding frame with a second reflecting resin.

Abstract: The present application provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate on which at least one light guide groove is provided, the light guide groove penetrating the substrate; and a light emitting structure disposed on one side of the substrate, the light emitting structure including at least one set of a first electrode and a second electrode. The light guide groove at least corresponds to one set of a first electrode and a second electrode to prevent bad points. A wavelength conversion dielectric layer is filled into the light guide groove to avoid a coffee ring effect and achieve uniform and full-color light emission of a light emitting device. The semiconductor structure may further save manufacturing costs and prevent crosstalk between light emitted from various light emitting units.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: A display substrate includes a base substrate; and a single pixel definition layer on the base substrate defining a plurality of subpixel apertures. The single pixel definition layer includes a plurality of hydrophobic particles dispersed in a main body for enhancing hydrophobicity of a portion of the single pixel definition layer.

Abstract: A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies.

Abstract: A display device is provided. The display device includes a substrate having a first surface and a second surface opposite to the first surface, a plurality of light-emitting units disposed on the first surface of the substrate, and a plurality of conductive structures extending into the substrate from the second surface of the substrate. The plurality of conductive structures are electrically connected to the plurality of light-emitting units.

Abstract: A solid-state imaging device includes a solid-state imaging element and a substrate fixed to the solid-state imaging element by a sealing resin on a surface on an opposite side of a light receiving surface of the solid-state imaging element, an outer edge of the substrate seen from the light receiving surface side of the solid-state imaging element is positioned within an outer edge of the solid-state imaging element and an outer edge of the sealing resin seen from the light receiving surface side of the solid-state imaging element is positioned within the outer edge of the solid-state imaging element. The sealing resin includes a first sealing resin and a second sealing resin not contacting the first sealing resin to seal the components.

Abstract: A light-emitting device array according to an embodiment includes a plurality of light-emitting devices connected to each other, each of the light-emitting devices comprising a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a (1-1)th electrode connected to the exposed first conductive semiconductor layer; a (1-2)th electrode connected to the second conductive semiconductor layer; (2-1)th and (2-2)th electrodes connected to the (1-1)th and (1-2)th electrodes, respectively; a first bonding layer disposed between the (1-1)th electrode and the (2-1)th electrode; and a second bonding layer disposed between the (1-2)th electrode and the (2-2)th electrode wherein the (2-1)th electrode of the first light-emitting device and the (2-2)th electrode of the second light-emitting device are integrated, and the (2-2)th electrode of the first light-emitting device and the (2-1)th electrode of the second light-emitting device are integr

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly LED devices with light-altering particle arrangements are disclosed. An LED device may include an LED chip with a light-altering material arranged to redirect light in a desired emission direction. The light-altering material may include light-altering particles with a median particle size that is determined based on a wavelength of light provided by the LED chip. Such light-altering particles may be arranged proximate sidewalls of the LED chip to redirect lateral emissions. LED devices may further include lumiphoric materials and other light-altering particles arranged proximate the lumiphoric materials with a median particle size that is determined based on a wavelength of light provided by the lumiphoric materials.

Abstract: Disclosed is a liquid polymerizable composition including a chain-growth polymerization dispersing monomer, a step-growth polymerization monomer system and inorganic nanoparticles homogeneously dispersed in the monomers, as well as its use for the preparation of a transparent polymeric material having a high refractive index and low haze and its use in the optical field.

Abstract: A phosphor powder composed of ?-sialon phosphor particles containing Eu. With regard to the phosphor powder, a volume-based median diameter (D50) determined by a laser diffraction scattering method is equal to or more than 10 ?m and equal to or less than 20 ?m, and a diffuse reflectance with respect to light at a wavelength of 600 nm is equal to or more than 93% and equal to or less than 99%.

Abstract: Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

Abstract: The present invention relates to a display device and, particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements comprises: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer in which the first conductive electrode is disposed; a second conductive semiconductor layer which overlaps the first conductive semiconductor layer and in which the second conductive electrode is disposed; a first passivation layer formed to cover outer surfaces of the first conductive semiconductor layer and the second conductive semiconductor layer; and a second passivation layer formed to cover the first passivation layer and formed such that at least a portion thereof varies in thickness.

Abstract: To provide an organic photoelectronic element, of which the external quantum efficiency is improved, the power consumption is low and the service life is prolonged. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, and a hole transport layer provided in contact with the light emitting layer between the light emitting layer and the anode, wherein the hole transport layer contains an organic semiconductor material and a fluorinated polymer, and at the surface of the hole transport layer in contact with the light emitting layer, the fluorinated polymer is present.

Abstract: Disclosed herein is an apparatus for providing conductivity. The apparatus may include an epitaxial layered structure having a first-type doped semiconductor layer, a second-type doped semiconductor layer, and an active layer between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The apparatus may also include a conductive layer adjacent to and in ohmic contact with the first-type doped semiconductor layer. The conductive layer may have a micropixellated structure comprising a plurality of micropixel contact areas that are electrically isolated from each other. The plurality of micropixel contact areas may be sized and spaced to allow multiple ones of the plurality of micropixel contact areas to overlap a single contact pad for providing charge flow for a pixel in an array of pixels formed using the epitaxial layered structure.

Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

Abstract: A variety of light-emitting devices for general illumination utilizing solid state light sources (e.g., light emitting diodes) are disclosed. In general, the devices include a scattering element in combination with an extractor element. The scattering element, which may include elastic and/or inelastic scattering centers, is spaced apart from the light source element. Opposite sides of the scattering element have asymmetric optical interfaces, there being a larger refractive index mismatch at the interface facing the light emitting element than the interface between the scattering element and the extractor element. Such a structure favors forward scattering of light from the scattering element. In other words, the system favors scattering out of the scattering element into the extractor element over backscattering light towards the light source element.

Abstract: A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15° and not more than 50°.

Abstract: A light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. The wavelength conversion layer includes a phosphor layer having a phosphor and a stress release layer without the phosphor.

Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Abstract: An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.

Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Abstract: A method of micro-devices transfer comprising following steps of: providing a flexible carrier including a plurality of grooves which are designed in positions corresponding one-to-one to a plurality of target surface portions of an outer surface of a target member, each of the grooves has an opening in a first surface of the flexible carrier; applying at least one external force to the flexible carrier such that the opening of each of the grooves is enlarged; placing a plurality of micro-devices in the grooves respectively; releasing the at least one external force such that the micro-devices are held by the grooves of the flexible carrier and auto-aligned in positions corresponding one-to-one to the target surface portions of the outer surface of the target member; aligning and bonding the micro-devices to the target surface portions of the outer surface of the target member; and removing the flexible carrier.

Abstract: A chip-scale packaging (CSP) light-emitting device (LED) is provided with an electrode polarity identifier, and includes a light-emitting semiconductor chip and a packaging structure. A first horizontal direction and a perpendicular second horizontal direction are specified on a semiconductor-chip-upper surface. The packaging structure covers the semiconductor-chip-upper surface, a first semiconductor-chip-side surface and a second semiconductor-chip-side surface of the light-emitting semiconductor chip, and includes a first package-side surface and a second package-side surface. A first region is between the first package-side surface and the first semiconductor-chip-side surface, and a second region is between the second package-side surface and the second semiconductor-chip-side surface, wherein an area of the first region is different from an area of the second region.