Deposition Of Boron Or Phosphorus Doped Silicon Oxide, E.g., Bsg, Psg, Bpsg (epo) Patents (Class 257/E21.275)
  • Publication number: 20070049041
    Abstract: Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 ?/minute.
    Type: Application
    Filed: September 1, 2005
    Publication date: March 1, 2007
    Applicant: Micron Technology, Inc.
    Inventor: Niraj Rana
  • Patent number: 6962855
    Abstract: A material layer containing impurities that react with water molecules is formed on a substrate. The material layer is then heated under a pressure exceeding one atmosphere and in the presence of water vapor to generate pores in the material layer. The material layer may form the interlayer insulating layer of a semiconductor device.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: November 8, 2005
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Sung Kim, Young-Nam Kim, Hyun-Dam Jeong, Sun-Young Lee
  • Patent number: 6849497
    Abstract: In the case where holes are defined in BPSG films, respectively, lower electrodes are formed of polysilicon inside the holes, respectively, a nitride film is formed on top of the respective lower electrodes and one of the BPSG films, and the nitride film is subjected to healing oxidation in a wet atmosphere later in order to prevent oxidation of contact plugs and the lower electrodes, nitrogen is diffused into the upper surface of the BPSG film by ion implantation or boron dose in a layer in the vicinity of the surface of the BPSG film is lowered.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: February 1, 2005
    Assignee: Oki Electric Industry Co., Ltd.
    Inventor: Keiichi Hashimoto