Abstract: A wafer is positioned in an opening of a first frame. The wafer is pressure-bonded at one surface thereof to a first tape together with the first frame, onto a second tape pressure-bonded to a second frame. The wafer is processed by pressure-bonding the second tape, which is pressure-bonded to the second frame having an outer diameter smaller than an inner diameter of the opening of the first frame, to another surface of the wafer, cutting the first tape along an outer periphery of the second frame, imparting an external stimulus to the first tape to lower a pressure-bonding force with which the first tape is pressure-bonded to the one surface of the wafer, and peeling off the first tape from the one surface of the wafer pressure-bonded to the second tape.

Abstract: A resin flux solder paste includes a solder powder, and a flux, in which the flux contains at least an epoxy resin, a curing agent, a curing accelerator, and an activator, the epoxy resin contains 10% to 90% by weight of one or more of a biphenyl aralkyl type epoxy resin, a naphthalene type epoxy resin, and a dicyclopentadiene type epoxy resin, having an epoxy equivalent of 200 to 400, with respect to a total amount of the epoxy resin, and the curing agent contains 30% to 95% by weight of a biphenyl aralkyl phenol resin having a hydroxyl group equivalent of 150 to 350 with respect to a total amount of the curing agent, and 5% to 70% by weight of a phenol novolac resin having an allyl group having a hydroxyl group equivalent of 100 to 200 with respect to the total amount of the curing agent.

Abstract: A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyolefin sheet, pushing up each device chip through the polyolefin sheet, and picking up each device chip from the polyolefin sheet.

Abstract: A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of picking up each device chip from the polyolefin sheet.

Abstract: A manufacturing process of an element chip comprises a preparing step for preparing a substrate having first and second sides opposed to each other, the substrate containing a semiconductor layer, a wiring layer and a resin layer formed on the first side, and the substrate including a plurality of dicing regions and element regions defined by the dicing regions. Also, the manufacturing process comprises a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions. Further, the manufacturing process comprises a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips. The laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions.

Abstract: A method of confirming an optical axis of a laser processing apparatus includes placing an image capturing unit so as to be movable in X-axis directions, removing a second mirror and capturing an image of a laser beam with the image capturing unit for receiving the laser beam reflected by a first mirror, installing the second mirror and capturing an image of the laser beam with the image capturing unit for receiving the laser beam reflected by a third mirror, and determining whether an optical axis of the laser beam reflected by the first mirror and an optical axis of the laser beam reflected by the third mirror exist in one XZ plane or not on the basis of the captured images and a reference line in the captured images.

Abstract: A recess in a die backside surface occupies a footprint that accommodates an inductor coil that is formed in metallization above an active surface of the die. Less semiconductive material is therefore close to the inductor coil. A ferromagnetic material is formed in the recess, or a ferromagnetic material is formed on a dielectric layer above the inductor coil. The recess may extend across a die that allows the die to be deflected at the recess.

Abstract: Wearable electronic devices that employ techniques for routing signals between components are described. An exemplary wearable electronic device includes a set of pod structures with each pod structure positioned adjacent and physically coupled to at least one other pod structure. The set of pod structures includes multiple sensor pods and at least one processor pod. Each sensor pod includes an on-board sensor to in use detect user-effected inputs and provide signals in response to the user-effected inputs. The signals are serially routed via successive ones of adjacent pod structures by respective communicative pathways until the signals are routed from the sensor pods to the processor pod. A processor on-board the processor pod processes the signals. Systems, articles, and methods for routing electrical signals and/or optical signals, including analog signals and/or digital signals, between pod structures are described.

Abstract: An apparatus is described that includes a redistribution layer and a semiconductor die on the redistribution layer. An electrically conductive layer resides over the semiconductor die. A compound mold resides over the electrically conductive layer.

Abstract: A wafer processing method for forming a modified layer within a wafer along planned dividing lines forms the modified layer within the wafer, positions a condensing point within the wafer or at the top surface of the wafer and applies a second laser beam while moving the condensing point in a thickness direction of the wafer, images reflected light, and determines the processed state of the wafer on the basis of a photographed image. The second laser beam is formed such that the sectional shape of the second laser beam in a plane perpendicular to the traveling direction of the second laser beam is asymmetric with respect to the modified layer.

Abstract: A protective film forming agent for dicing of semiconductor wafers for forming a protective film on the surface of the semiconductor wafers and capable of forming a protective film of high absorbance index, and a production method of semiconductor chips using the protective film forming agent. In a protective film forming agent containing a water-soluble resin, light absorber and solvent, a compound having a specific structure is used as the light absorber. The content of the light absorber in the protective film forming agent is 0.1% by mass or more and 10% by mass or less.

Abstract: A fabrication method includes arranging a plurality of dice on a substrate and performing a first etching process that etches a first layer of the substrate at a boundary between adjacent dice on the substrate. The etching forms facets of one or more waveguides that are defined within the first layer, and the etching leaves a portion of the first layer in the boundary between the adjacent dice. The method continues with a second etching process that etches the portion of the first layer and a second layer beneath the portion of the first layer, the second etching process forming a trench in the boundary where the second layer has a different material than the first layer. The method also includes separating the dice from one another along the trench.

Abstract: The present invention relates to a wafer carrier thickness measuring device capable of accurately measuring an inner/outer circumferential thickness of a wafer carrier in a non-contact manner. The present invention provides a wafer carrier thickness measuring device including: a first table installed to be capable of rotating and moving vertically and capable of supporting a central portion of a wafer carrier; a second table disposed outside the first table and rotatably installed, and capable of supporting an outer circumferential portion of the wafer carrier; upper and lower sensors for calculating a thickness of the wafer carrier by measuring a distance to upper and lower surfaces of the wafer carrier supported by one of the first and second tables in a non-contact manner; and a sensor driving unit located at one side of the second table and moving the upper and lower sensors to an upper side or a lower side of the wafer carrier supported by one of the first and second tables.

Abstract: A wafer processing method includes applying a laser beam of such a wavelength as to be transmitted through a wafer to the wafer from a back surface of the wafer, with a focal point of the laser beam positioned at a predetermined point inside the wafer, to form division start points along streets, the division start point including a modified layer and a crack extending from the modified layer to a front surface of the wafer; and grinding the back surface of the wafer by a grinding wheel having a plurality of grindstones in an annular pattern, to thin the wafer and divide the wafer into individual device chips. In forming the division start points, a chuck table is heated to a predetermined temperature, whereby the cracks formed inside the wafer to extend from the modified layers to the front surface of the wafer are grown.

Abstract: A method of forming a plurality of semiconductor packages includes providing an array of unsingulated semiconductor packages that are at least partially encapsulated in an encapsulant. The array of unsingulated semiconductor packages may be coupled with a lead frame or a substrate. A first plurality of singulation lines are simultaneously etched in the encapsulant through slits in an etch mask using a plasma etching process and a fixture coupled with the array. A second plurality of parallel singulation lines may also be etched. The first and second pluralities of singulation lines may include substantially straight or arcuate lines. The second plurality of parallel singulation lines may be substantially perpendicular to the first plurality of parallel singulation lines and be formed using the plasma etching process, the fixture, and an etch mask. The formation of singulation lines in the array singulates the array into a plurality of singulated semiconductor packages.

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, a backside and side surfaces extending between the major surface and the backside. The semiconductor device also includes at least one metal layer extending across the backside of the substrate. A peripheral part of the at least one metal layer located at the edge of the substrate between the backside and at least one of the side surfaces extends towards a plane containing the major surface. This can prevent burrs located at the peripheral part of the at least one metal layer interfering with the mounting of the backside of the substrate on the surface of a carrier.

Abstract: Provided is a method of fabricating a semiconductor device, including the following steps. A first seal ring and a second seal ring that are separated from each other are formed on a substrate. A protective layer covering the first seal ring and the second seal ring is formed on the substrate. The protective layer between the first seal ring and the second seal ring includes a concave surface. The protective layer at the concave surface and a portion of the protective layer on the first seal ring are removed to form a spacer on a sidewall of the first seal ring, and form an opening in the protective layer. The width of the opening is greater than the width of the first seal ring, and the opening exposes a top surface of the first seal ring and the spacer.

Abstract: A wafer processing method for processing a wafer having a substrate and a device layer formed on a front side of the substrate includes forming a mask on a back side of the wafer, so as to form an etched groove along each street through a thickness of the substrate from the back side of the wafer, performing plasma etching from the back side of the wafer through the mask to the substrate after forming the mask, thereby forming the etched groove in the substrate along each street so that the etched groove has a depth equal to the thickness of the substrate, and applying a laser beam to the device layer along each street from the front side of the wafer before etching and mask forming, thereby forming a device layer dividing groove corresponding to the etched groove along each street.

Abstract: A method for fabricating caterpillar trenches for wafer dicing includes forming at least one opening within a mask formed on a substrate to protect an electronics device disposed on the substrate during isotropic etching, and isotropically etching through the at least one opening to form at least one wafer dicing channel, including laterally etching a collection of nested trenches including trenches each having a non-circular cross-section from a first surface of the substrate to a second surface of the substrate opposite the first surface.

Abstract: An adhesive tape sticking apparatus includes a chamber includes a lower chamber and an upper chamber. The lower chamber includes a first inner space and the upper chamber includes a second inner space. An adhesive tape sheet is positioned between the upper chamber and the lower chamber. A substrate support is movable upward and downward within the lower chamber and is configured to support a substrate. A differential pressure generator is configured to generate a differential pressure between the first inner space and the second inner space. A tape support plate positioned between a first sidewall of the lower chamber and a circumferential edge of the substrate. The tape support plate is configured to contact at least a portion of the adhesive tape sheet when the adhesive tape sheet bends downward toward the first inner space when the differential pressure is generated between the first and second inner spaces.

Abstract: A package and a method of forming the same are provided. A method includes forming a first die structure. The first die structure includes a die stack and a stacked dummy structure bonded to a carrier. A second die structure is formed. The second die structure includes a first integrated circuit die. The first die structure is bonded to the second die structure by bonding a topmost integrated circuit die of the die stack to the first integrated circuit die. The topmost integrated circuit die of the die stack is a farthest integrated circuit die of the die stack from the carrier. A singulation process is performed on the first die structure to form a plurality of individual die structures. The singulation process singulates the stacked dummy structure into a plurality of individual stacked dummy structures.

Abstract: In various embodiments, a method for processing a wafer is provided. The method includes forming a layer stack, including a support layer and a useful layer and a sacrificial region between them, said sacrificial region having, vis-à-vis a processing fluid, a lower mechanical and/or chemical resistance than the support layer and than the useful layer. The support layer has a depression, which exposes the sacrificial region. The method further includes forming at least one channel in the exposed sacrificial region by means of the processing fluid. The channel connects the depression to an exterior of the layer stack.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves having a depth in excess of a finished thickness of the wafer while removing the patterns; a step of grinding a back surface side of the wafer to thin the wafer to the finished thickness, and to expose the laser processed grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: An apparatus is described that includes a redistribution layer and a semiconductor die on the redistribution layer. An electrically conductive layer resides over the semiconductor die. A compound mold resides over the electrically conductive layer.

Abstract: An electronic device having an electronic component with electric terminals and a component carrier in which the electronic component is packaged. The component carrier includes a shielding cage surrounding all sides of the electronic component at least partially.

Abstract: A method for dicing a wafer includes scribing perforations in a wafer. The wafer has a monocrystalline structure and the perforations have a polycrystalline structure. The method also includes adhering the wafer to a top surface of a dicing tape and applying a downward force on a periphery of the dicing tape. The downward force causes a bottom surface of the dicing tape to deform around a contour of a dome-shaped chuck, breaking the perforations in the wafer.

Abstract: A method for fabricating caterpillar trenches for wafer dicing includes forming at least one opening from a top surface of a mask formed on a substrate to a bottom surface of the mask opposite the top surface of the mask. The mask is formed on the substrate to protect an electronics device disposed on the substrate during isotropic etching. The method further includes isotropically etching through the at least one opening to form at least one wafer dicing channel, including isotropically etching a collection of nested trenches from a top surface of the substrate to a bottom surface of the substrate opposite the top surface of the substrate.

Abstract: A wafer includes a first set of dies and a second set of dies. The wafer further includes a scribe line separating the first set of dies from the second set of dies, wherein the scribe line has a first width. The wafer further includes a plurality of trenches between adjacent dies of the first set of dies and connected to the scribe line, wherein the plurality of trenches has a second width less than the first width, and a depth of each trench of the plurality of trenches is less than a thickness of the wafer.

Abstract: Package structures and methods for forming the same are provided. A fan-out package structure includes a semiconductor substrate. The package structure also includes a connector over a top surface of the semiconductor substrate. The package structure further includes a buffer layer surrounding the connector and overlying a sidewall of the semiconductor substrate. In addition, the package structure includes an encapsulation layer surrounding the buffer layer. The buffer layer is between the encapsulation layer and the sidewall of the semiconductor substrate. The package structure also includes a redistribution layer (RDL) over the buffer layer and the encapsulation layer. The redistribution layer is electrically connected to the connector.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has at least one chip, through interlayer vias aside the chip and a composite molding compound encapsulating the chip and the through interlayer vias. The semiconductor package may further include a redistribution layer and conductive elements disposed on the redistribution layer.

Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor device and a second semiconductor device are formed within a semiconductor wafer and a scribe region between the first semiconductor device and the second semiconductor device is patterned. A singulation process is then utilized within the scribe region to singulate the first semiconductor device from the second semiconductor device. The first semiconductor device and the second semiconductor device are then bonded to a second semiconductor substrate and thinned in order to remove extension regions from the first semiconductor device and the second semiconductor device.

Abstract: A wafer processing method includes a close contact making step of pressing a protective film against the front side of a wafer in a radially outward direction starting from the center of the wafer to thereby bring the protective film into close contact with the front side of the wafer, a protective member fixing step of covering the protective film with a protective member formed by curing a liquid resin to thereby fix the protective member through the protective film to the front side of the wafer, a grinding step of grinding the back side of the wafer to reduce the thickness of the wafer, and a peeling step of peeling the protective film and the protective member from the wafer thinned by the grinding step.

Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.

Abstract: Disclosed herein is a laser processing apparatus including a condenser having a function of spherical aberration. Since the condenser has a function of spherical aberration, the focal point of a laser beam to be focused by the condenser and applied to a wafer can be continuously changed in position along the thickness of the wafer. Accordingly, a uniform shield tunnel composed of a fine hole and an amorphous region surrounding the fine hole can be formed so as to extend from, the front side of the wafer to the back side thereof, by one shot of the laser beam.

Abstract: A wafer producing method for producing an SiC wafer from a single crystal SiC ingot. The wafer producing method includes a separation surface forming step of forming a separation surface composed of modified layers, cracks, and connection layers inside the ingot and a wafer separating step of separating a part of the ingot along the separation surface as an interface to thereby produce the wafer. The separation surface forming step includes a modified layer forming step of forming the modified layers and the cracks extending from the modified layers along a c-plane, and a connection layer forming step of forming the connection layers each connecting the cracks formed adjacent to each other in the thickness direction of the ingot.

Abstract: A destroy on-demand electrical device includes a substrate layer formed using a soluble material (e.g., a Germanium oxide), a semi-conductor layer formed from a material that can become soluble upon further processing (e.g., Germanium) and conductive elements, formed from a metallic material such as Copper. The device is coupled with one or more disintegration sources that contain disintegration agents (e.g., Hydrogen Peroxide) that can promote disintegration of the device. The device can be destroyed in response to actuation of the disintegration sources, for example by actuation of a source that produces Hydrogen Peroxide for use in oxidizing the semi-conductor layer. Water can be used to dissolve dissolvable substrate layers. The semi-conductor layer can be destroyed by first processing this layer to form a dissolvable material and dissolving the processed layer with water. The remaining Copper components disintegrate once their underlying layer have been dissolved and/or by use of a salt.

Abstract: An optoelectronic lamp device includes an optoelectronic semiconductor component including a top side including a light-emitting face, and a housing embedding the semiconductor component and leaving free the light-emitting face, wherein a housing face is coated with a light-scattering dielectric resist layer that may scatter light incident on a face of the resist layer facing away from the housing face.

Abstract: A processing method of a package wafer includes a mold resin removal step of exposing grooves filled with a mold resin of the package wafer in a peripheral surplus region, a holding step of holding the package wafer in such a manner that the grooves are exposed, an orientation adjustment step of causing the grooves to be parallel to a processing-feed direction in which processing feeding of a chuck table is carried out when dividing grooves are formed, a coordinate registration step of imaging both ends of the plural grooves exposed at a peripheral edge and registering coordinate information of both ends or a single side of the grooves from taken images, and a dividing groove forming step of calculating the positions of the dividing grooves to be formed along the grooves based on the registered coordinate information of the grooves and forming the dividing grooves along the grooves.

Abstract: Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain embodiments employ bond-and-release system(s) where release occurs along a cleave plane formed by implantation of particles into the donor. Some embodiments may rely upon release by converting components from solid to liquid under carefully controlled thermal conditions (e.g., solder-based materials and/or thermal decomposition of Indium-containing materials). Some embodiments utilize laser-induced film release processes using epitaxially grown or implanted regions as an optically absorptive region. A single bond-and-release sequence may involve processing an exposed N-face of GaN material. Multiple bond-and-release sequences (involving processing an exposed Ga-face of GaN material) may be employed in series, for example utilizing a temporary handle substrate as an intermediary.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

Abstract: A method of making an inkjet print head may include forming, by sawing with a rotary saw blade, first discontinuous slotted recesses in a first surface of a wafer. The first discontinuous slotted recesses may be arranged in parallel, spaced apart relation. The method may further include forming, by sawing with the rotary saw blade, second discontinuous slotted recesses in a second surface of the wafer aligned and coupled in communication with the first continuous slotted recesses to define through-wafer channels. In another embodiment, the first and second plurality of discontinuous recesses may be formed by respective first and second rotary saw blades.

Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.

Abstract: A semiconductor device includes a substrate and a conductive layer. The substrate has an upper surface that is a substantially rectangular shape having a pair of two sides extending in a first direction and a pair of two sides extending in a second direction. The conductive layer is provided on the substrate and extending along a periphery of the substrate. The conductive layer extends and zigzags toward the first direction.

Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

Abstract: A method includes forming a molding compound molding a lower portion of an electrical connector of a wafer therein. The molding compound is at a front surface of the wafer. The molding compound covers a center region of the wafer, and leaves an edge ring of the wafer not covered. An opening is formed to extend from the front surface of the wafer into the wafer, wherein the opening is in the edge ring of the wafer. A backside grinding is performed on the wafer until the opening is revealed through a back surface of the wafer. The method further includes determining a position of a scribe line of the wafer using the opening as an alignment mark, and sawing the wafer from a backside of the wafer by sawing through the scribe line.

Abstract: Disclosed is a method for separating a substrate (1) along a separation pattern (4), in which method a substrate (1) is provided and an auxiliary layer (3) is applied to the substrate, said layer covering the substrate at least along the separation pattern. The substrate comprising the auxiliary layer is irradiated, such that the material of the auxiliary layer penetrates the substrate along the separation pattern in the form of an impurity. The substrate is broken along the separation pattern. A semiconductor chip (15) is also disclosed.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a first molding material disposed around the integrated circuit die, and a through-via disposed within the first molding material. A first side of a redistribution layer (RDL) is coupled to the integrated circuit die, the through-via, and the first molding material. A second molding material is over a second side of the RDL, the second side of the RDL being opposite the first side of the RDL. The packaged semiconductor device includes an antenna over the second molding material.

Abstract: Methods and apparatuses are provided where a parting agent is applied to at least one portion of a substrate. The at least one portion of the substrate is removed from a carrier.