Including Semiconductor Component With At Least One Potential Barrier Or Surface Barrier Adapted For Light Emission Structurally Associated With Controlling Devices Having A Variable Impedance And Not Being Light Sensitive (epo) Patents (Class 257/E27.12)
  • Patent number: 8399893
    Abstract: A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: March 19, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Dieter Eissler, Siegfried Herrmann
  • Publication number: 20130056762
    Abstract: A display device having a base substrate provided with light-emitting devices and terminal electrodes connected thereto; a sealing substrate disposed to face the base substrate; a first resin material between the base substrate and the sealing substrate so as to surround a first region in which the light-emitting devices are provided; and a second resin material between the base substrate and the sealing substrate and is filled in the first region surrounded by the first resin material so as to seal the light-emitting devices.
    Type: Application
    Filed: October 31, 2012
    Publication date: March 7, 2013
    Applicant: SONY CORPORATION
    Inventor: SONY CORPORATION
  • Publication number: 20130056764
    Abstract: A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.
    Type: Application
    Filed: November 5, 2012
    Publication date: March 7, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Semiconductor Energy Laboratory Co., Ltd.
  • Publication number: 20130049030
    Abstract: A light emitting device according to the embodiment includes a first light emitting structure including a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first reflective electrode under the first light emitting structure; a second light emitting structure including a first conductive type third semiconductor layer, a second active layer under the first conductive type third semiconductor layer, and a second conductive type fourth semiconductor layer under the second active layer; a second reflective electrode under the second light emitting structure; a contact part that electrically connects the first conductive type first semiconductor layer of the first light emitting structure to the second reflective electrode; and a first insulating ion implantation layer between the contact part and the second conductive type second semiconductor layer
    Type: Application
    Filed: April 9, 2012
    Publication date: February 28, 2013
    Inventor: Hwan Hee JEONG
  • Patent number: 8384096
    Abstract: A semiconductor component comprising at least one optically active first region (112) for emitting electromagnetic radiation (130) in at least one emission direction and at least one optically active second region (122) for emitting electromagnetic radiation (130) in the at least one emission direction. The first region (112) is here arranged in a first layer (110) and the second region (122) in a second layer (120), the second layer (120) being arranged over the first layer (110) in the emission direction and comprising a first passage region (124) assigned to the first region (112), which first passage region is at least partially transmissive for the electromagnetic radiation (130) of the first region (112).
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: February 26, 2013
    Assignee: Osram Opto Semiconductors GmbH
    Inventor: Siegfried Herrmann
  • Publication number: 20130043495
    Abstract: The present invention provides an active matrix substrate in which a peripheral can be narrowed or a gap between adjacent wirings increased to improve a yield. The present invention is an active matrix substrate in which a peripheral region is provided outside a display region. In the active matrix substrate, a first, a second, and a third transistor, a floating wiring, a switching wiring, a main wiring, and a branch wiring electrically connected with the main wiring are arranged in the peripheral region. The floating wiring and branch wiring each electrically connect the first and second transistors and comprise an intersecting portion intersecting with the switching wiring, with the third transistor being provided at the intersecting portion. A gate electrode of the third transistor includes the switching wiring, one of a source electrode and a drain electrode thereof includes the branch wiring, and the other of the source electrode and the drain electrode includes the floating wiring.
    Type: Application
    Filed: August 9, 2010
    Publication date: February 21, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Isao Ogasawara, Masahiro Yoshida
  • Patent number: 8378359
    Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises a first conductive type substrate, first to fourth metal electrodes, and a light emitting diode. The first conductive type substrate comprises P-N junction first to fourth diodes. The first metal electrode is connected to the first diode and the fourth diode. The second metal electrode is connected to the third diode and the second diode. The third metal electrode is connected to the first diode and the third diode. The fourth metal electrode is connected to the second diode and the fourth diode. The light emitting diode is electrically connected to the third metal electrode and the fourth metal electrode.
    Type: Grant
    Filed: October 29, 2008
    Date of Patent: February 19, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jae Cheon Han
  • Publication number: 20130037829
    Abstract: A display substrate includes a base substrate; a first metal pattern disposed on the base substrate and comprising a first signal line and a first electrode electrically connected to the first signal line; and a buffer pattern disposed at a corner between a sidewall surface of the first metal pattern and the base substrate.
    Type: Application
    Filed: March 12, 2012
    Publication date: February 14, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chong-Sup CHANG, Yoon-Ho KHANG, Se-Hwan YU, Yong-Su LEE, Min KANG, Myoung-Geun CHA, Ji-Seon LEE
  • Publication number: 20130037834
    Abstract: According to an aspect of the invention, there is provided a light emitting element module substrate including: a laminated plate; and a metal layer. The laminated plate includes a base metal plate and an insulating layer provided on the base metal plate. The metal layer is provided on the insulating layer. The metal layer includes a mounting section on which a light emitting element is to be mounted, and a bonding section to which a wiring electrically connected to the light emitting element is to be bonded. The metal layer includes a silver layer which is an uppermost layer of at least one of the mounting section and the bonding section and is formed by electrolytic plating. The mounting section and the bonding section are electrically isolated from a periphery of the laminated plate.
    Type: Application
    Filed: February 25, 2011
    Publication date: February 14, 2013
    Applicants: TOSHIBA LIGHTING & TECHNOLOGY CORPORATION, Kabushiki Kaisha Toshiba
    Inventors: Akihiko Happoya, Masahiro Izumi, Tomohiro Sanpei
  • Publication number: 20130037826
    Abstract: A light emitting diode (LED) package module and the manufacturing method thereof are presented. A plurality of LEDs and a plurality of semiconductor elements are disposed on a silicon substrate, and then a plurality of lenses is formed above the positions of the plurality of the LEDs, and the plurality of the lenses is corresponding to the plurality of the LEDs. Then, a plurality of package units is defined on the silicon substrate, and each package unit has a semiconductor element and at least one LED. After that, the silicon substrate is cut to form a plurality of LED package modules, and each LED package module has at least one package unit.
    Type: Application
    Filed: October 17, 2012
    Publication date: February 14, 2013
    Inventor: Wei-Jen Chou
  • Publication number: 20130032826
    Abstract: Disclosed is an integrated apparatus including an isolative substrate, a plurality of driver chips provided on a side of the isolative substrate, a power supply provided on the side of the isolative substrate and electrically connected to the driver chips, and LED chips provided on another side of the isolative substrate and electrically connected to the driver chips. Thus, the driver chips, the power supply and the LED chips are integrated on the isolative substrate. The production is easy. The integrated apparatus is not vulnerable to surges and lightning strikes. Electromagnetic interferences are reduced. Heat radiation of the integrated apparatus is excellent so that the LED chips are protected from thermal effect.
    Type: Application
    Filed: September 22, 2011
    Publication date: February 7, 2013
    Applicant: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
    Inventors: Yang-Kuao Kuo, Chin-Peng Wang, Lea-Hwung Leu
  • Publication number: 20130026510
    Abstract: A light emitting diode (LED) device includes a substrate, first and second LED chips arranged on the substrate, and a phosphor layer over the first and second LED chips. The phosphor layer includes a plurality of phosphor units, each including a phosphor particle and a silver halide layer encapsulating the phosphor particle. Light emitted from the second LED chip strikes the phosphor particles to generate a first light, which. combines with the light to generate a resultant light. The silver halide layer is reduced by the light from the first LED chip to produce silver particles around the phosphor particles. The silver particles can block the light emitted from the second LED chip from sticking the phosphor particles. By adjusting the current supplied to the first LED chip, the color temperature of the resultant light generated by the LED device can be changed.
    Type: Application
    Filed: March 19, 2012
    Publication date: January 31, 2013
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: HOU-TE LIN, CHAO-HSIUNG CHANG
  • Publication number: 20130026504
    Abstract: A light source includes a substrate arranged into at least two facing surfaces which form a seam therebetween; and a lighting device with light emitting diode (LED) chips embedded therein in a linear arrangement. The LED chips generate light photons. The lighting device has a first edge and a second edge opposite to the first edge, the light photons within the lighting device that are emitted by the LED chips from a top surface of the LED chips being output from the lighting device at the second edge of the device. The lighting device is sandwiched in the seam between the two facing surfaces, the second edge of the lighting device being exposed when the seam is in an opened position.
    Type: Application
    Filed: July 27, 2012
    Publication date: January 31, 2013
    Applicant: GROTE INDUSTRIES, LLC
    Inventors: Martin J. Marx, Richard C. Bozich, Stanley D. Robbins, James E. Roberts, Jennifer M. Ehlers
  • Publication number: 20130020554
    Abstract: There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 24, 2013
    Inventors: Jong In YANG, Tae Hyung Kim, Young Chul Shin, Tae Hyun Lee, Sang Yeob Song, Tae Hun Kim
  • Publication number: 20130021316
    Abstract: A light-emitting device in which variation in luminance of pixels is suppressed. A light-emitting device includes at least a transistor, a first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a capacitor, and a light-emitting element. The first wiring and a first electrode of the capacitor are electrically connected to each other through the first switch. A second electrode of the capacitor is connected to a first terminal of the transistor. The second wiring and a gate of the transistor are electrically connected to each other through the second switch. The first electrode of the capacitor and the gate of the transistor are electrically connected to each other through the third switch. The first terminal of the transistor and an anode of the light-emitting element are electrically connected to each other through the fourth switch.
    Type: Application
    Filed: July 12, 2012
    Publication date: January 24, 2013
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Seiko INOUE, Hiroyuki MIYAKE
  • Publication number: 20130015471
    Abstract: An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.
    Type: Application
    Filed: April 3, 2012
    Publication date: January 17, 2013
    Inventors: Hong-Sick PARK, Wang-Woo Lee
  • Publication number: 20130015439
    Abstract: An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Hiroyuki MIYAKE, Hideaki KUWABARA, Hideki UOCHI
  • Publication number: 20130009174
    Abstract: A vertical stacked light emitting structure includes a substrate unit, a first light emitting unit, a light guiding unit, and a second light emitting unit. The substrate unit includes at least one substrate body. The first light emitting unit includes at least one first LED bare chip disposed on the substrate body and electrically connected to the substrate body. The light guiding unit includes at least one light guiding body disposed on the first LED bare chip. The second light emitting unit includes at least one second LED bare chip disposed on the light guiding body and electrically connected to the substrate body. Therefore, the first LED bare chip, the light guiding body, and the second LED bare chip are stacked on top of one another sequentially.
    Type: Application
    Filed: September 2, 2011
    Publication date: January 10, 2013
    Applicant: AZUREWAVE TECHNOLOGIES, INC.
    Inventors: CHI-HSING HSU, CHUN-YU LU, MING-CHE KUO
  • Patent number: 8350305
    Abstract: A solid-state imaging device is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for element isolation regions other than the shallow trench element isolation region.
    Type: Grant
    Filed: January 4, 2008
    Date of Patent: January 8, 2013
    Assignee: Sony Corporation
    Inventors: Kazuichiro Itonaga, Yu Oya
  • Publication number: 20130001578
    Abstract: A light emitting device includes: a substrate; a first electrode on the substrate, the first electrode including a light-transmissive material having a refractive index greater than a refractive index of the substrate; a refraction conversion layer between the substrate and the first electrode, the refraction conversion layer including a first layer having a refractive index greater than the refractive index of the first electrode, a second layer having a refractive index smaller than the refractive index of the first layer, and a third layer having a refractive index smaller than the refractive index of the second layer, wherein the first layer, the second layer, and the third layer are sequentially formed in a direction from the first electrode toward the substrate; a second electrode facing the first electrode; and an organic emissive layer between the first electrode and the second electrode.
    Type: Application
    Filed: June 28, 2012
    Publication date: January 3, 2013
    Inventors: Jung-Bae Song, Sang-Pil Lee, Young-Rok Song
  • Publication number: 20130001605
    Abstract: A light-emitting device includes a circuit substrate including at least a pair of electrodes, an LED element electrically mounted on the circuit substrate, a phosphor plate disposed on an upper surface of the LED element, a diffuser plate disposed on an upper surface of the phosphor plate, and a white resin disposed on an upper surface of the circuit substrate and covering a peripheral side surface of the LED element, a peripheral side surface of the phosphor plate, and a peripheral side surface of the diffuser plate. The present invention makes it possible to obtain a planar light-emitting surface even with a plurality of LEDs, and also, a problem of color-ring occurrence caused by a phosphor may be less represented.
    Type: Application
    Filed: July 2, 2012
    Publication date: January 3, 2013
    Applicants: CITIZEN HOLDINGS CO., LTD., CITIZEN ELECTRONICS CO., LTD.
    Inventors: Kazuya ISHIHARA, Jo Kinoshita
  • Publication number: 20130001604
    Abstract: There is a reflective layer covering almost the entire surface of the light emitting portion except the portions where the light emitting elements are arranged, it is possible to increase the reflectivity of the light emitting portion to realize a higher luminance. In addition, the heat generated from the light emitting elements can be dissipated through the reflective layer, so that it is possible to prevent overheat of the light emitting device, and it is thus possible to improve the reliability of the light emitting device.
    Type: Application
    Filed: June 26, 2012
    Publication date: January 3, 2013
    Applicant: Toyoda Gosei Co., Ltd.
    Inventors: Syota SHIMONISHI, Hiroyuki TAJIMA, Yosuke TSUCHIYA, Akira SENGOKU
  • Publication number: 20130001599
    Abstract: An LED package includes a body; a first lead frame having a first cavity in the body; a second lead frame having a second cavity in the body; a first bonding part protruding into a region between a first lateral side of the body and the first cavity from the first lead frame; a second bonding part protruding into a region between a second lateral side of the body, and the second cavity from the second lead frame; a first LED in the first cavity; a second LED in the second cavity; a third lead frame disposed between the first lateral side and the first cavity; a fourth lead frame disposed between the second lateral side and the second cavity; a first protective device on one of the third lead frame and the first bonding part; and a second protective device on one of the fourth lead frame and the second bonding part.
    Type: Application
    Filed: January 9, 2012
    Publication date: January 3, 2013
    Applicant: LG INNOTEK, CO., LTD.
    Inventor: Dong Yong LEE
  • Publication number: 20120326151
    Abstract: A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode.
    Type: Application
    Filed: October 27, 2011
    Publication date: December 27, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Zhi Feng Zhan, Seung-Gyu Tae, Deok-Hoi Kim
  • Publication number: 20120326178
    Abstract: An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.
    Type: Application
    Filed: November 30, 2010
    Publication date: December 27, 2012
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Michael Fehrer, Alfred Lell, Martin Müller, Tilman Schlenker, Sönke Tautz, Uwe Strauss
  • Publication number: 20120326184
    Abstract: A LED (Light-Emitting Diode) lighting fixture and a manufacturing method thereof are disclosed. The LED lighting fixture comprises a LED module generating light at a wavelength range of 300-700 nm, a lamp cover shielding the LED module, and a phosphor layer. The phosphor layer which is coated on an inner surface towards the LED module comprises at least two types of phosphor mixed at a default ratio for transforming the light of 300-700 nm in wavelength to luminary light in the wavelength range of 400-700 nm.
    Type: Application
    Filed: May 24, 2012
    Publication date: December 27, 2012
    Applicant: WELLYPOWER OPTRONICS CORPORATION
    Inventors: Chih-Hao LIN, Cheng-Wei HUNG, Kun-Hua WU, Chao-Hsien WANG, Po-Chang CHEN, Chih-Ping LO, Po-Chang CHEN
  • Publication number: 20120326185
    Abstract: A light emitting device including a carrying element having two electric conductors connectable to a power source, a light emitting element disposed on the carrying element and electrically connected to the two electric conductors, and at least one correction element electrically connected to the light emitting element, wherein the light emitting element is adapted to provide a light source upon connection of the two electric conductors with the power source, and the at least one correction element allows the light emitting element to have functions of temperature compensation, voltage correction, or surge absorption.
    Type: Application
    Filed: June 22, 2012
    Publication date: December 27, 2012
    Applicant: EPISTAR CORPORATION
    Inventors: Ming-Te LIN, Hsi-Hsuan YEN, Ming-Yao LIN, Wen-Yung Yeh, Chia-Chang KUO, Sheng Pan HUANG, Min Hsun HSIEH, Chien Yuan WANG
  • Publication number: 20120319122
    Abstract: An organic light-emitting display device including: a substrate; a plurality of pixels each including a first electrode, a second electrode, and an organic emission layer interposed between the first electrode and the second electrode; and a black matrix-containing neutral density (ND) film formed in a direction in which light is emitted from the plurality of pixels.
    Type: Application
    Filed: February 7, 2012
    Publication date: December 20, 2012
    Inventor: Jang-Seok Ma
  • Publication number: 20120319143
    Abstract: A light emitting device includes a plurality of solid-state light emitting elements mounted on a substrate; and a wavelength converting unit covering the solid-state light emitting elements, the wavelength converting unit containing fluorescent materials. The solid-state light emitting elements include inner solid-state light emitting elements arranged in a central position of the substrate and outer solid-state light emitting elements arranged outwardly of the inner solid-state light emitting elements, and the wavelength converting unit is configured such that a probability that light propagating through the wavelength converting unit is brought into contact with the fluorescent materials in a portion of the wavelength converting unit covering the outer solid-state light emitting elements is lower than a probability that light propagating through the wavelength converting unit is brought into contact with the fluorescent materials in other portions.
    Type: Application
    Filed: June 15, 2012
    Publication date: December 20, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Naoko TAKEI, Kouji NISHIOKA
  • Publication number: 20120305920
    Abstract: A semiconductor device including: a first electric conductor of a lower layer side and a second electric conductor of an upper layer side; a thick film insulating layer provided between the first electric conductor and the second electric conductor; and a contact portion formed so as to imitate an inner surface shape of a through hole with respect to the insulating layer and electrically connecting the first electric conductor and the second electric conductor, in which a tapered angle of the through hole is an acute angle.
    Type: Application
    Filed: May 11, 2012
    Publication date: December 6, 2012
    Applicant: SONY CORPORATION
    Inventors: Koichi Nagasawa, Masanobu Ikeda, Yasuhiro Murata
  • Publication number: 20120305953
    Abstract: A mixed light source comprising: a first radiation source, which emits radiation in the red spectral range; an excitation source, which contains a III-V semiconductor material; and a conversion substance, which, during the operation of the mixed light source, converts the radiation of the excitation source at least partly into radiation whose color locus in the CIE chromaticity diagram lies within a polygon spanned by the coordinates (0.1609; 0.497), (0.35; 0.6458), (0.558; 0.444) and (0.453; 0.415).
    Type: Application
    Filed: July 15, 2010
    Publication date: December 6, 2012
    Inventors: Ralph Peter Bertram, Ralph Wirth, Jan Marfeld
  • Publication number: 20120299025
    Abstract: The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.
    Type: Application
    Filed: July 27, 2012
    Publication date: November 29, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Junya MARUYAMA, Toru TAKAYAMA, Yumiko OHNO
  • Publication number: 20120299031
    Abstract: D={(2?m+?L+?U)/4?}? is satisfied when an optical path length between a reflecting layer and pixel electrode and a counter electrode is D, a phase shift in reflection in the reflecting layer and pixel electrode is ?L, a phase shift in reflection in the counter electrode is ?U, a peak wavelength of a standing wave generated between the reflecting layer and pixel electrode, and the counter electrode is ?, and an integer of 2 or less is m. Here, among red, green, and blue pixel reflecting layer and pixel electrode, at least one reflecting layer and pixel electrode may be made of a different metal material from that of the other reflecting layer and pixel electrodes.
    Type: Application
    Filed: May 23, 2012
    Publication date: November 29, 2012
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Koya SHIRATORI
  • Publication number: 20120300150
    Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
    Type: Application
    Filed: August 6, 2012
    Publication date: November 29, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Kengo AKIMOTO, Shigeki KOMORI, Hideki UOCHI, Tomoya FUTAMURA, Takahiro KASAHARA
  • Publication number: 20120299889
    Abstract: A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
    Type: Application
    Filed: August 9, 2012
    Publication date: November 29, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Masayuki SAKAKURA, Mitsuaki OSAME, Takashi HAMADA, Tamae TAKANO, Yu YAMAZAKI, Aya ANZAI
  • Publication number: 20120300151
    Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
    Type: Application
    Filed: August 6, 2012
    Publication date: November 29, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Hiroyuki MIYAKE, Hideaki KUWABARA, Tatsuya TAKAHASHI
  • Publication number: 20120299030
    Abstract: An optoelectronic semiconductor component for a lighting device including a carrier, at least one optoelectronic semiconductor chip mounted on the carrier and which includes a radiation passage face remote from the carrier, by which a plane is defined, and a lens comprising 1) a radiation exit face, which, relative to a height above the plane, exhibits a minimum, in particular in a central region, and at least two local maxima, and at least two local maxima, and 2) at least two connecting embankments which each extend from one of the maxima to another of the maxima, and each connecting embankment comprises a saddle point higher than the minimum and lower than the maxima adjoining the connecting embankment.
    Type: Application
    Filed: December 28, 2010
    Publication date: November 29, 2012
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventor: Peter Brick
  • Publication number: 20120299007
    Abstract: There is provided a thin film transistor including an active layer on a substrate (the active layer including polysilicon and a metal catalyst dispersed in the polysilicon, a source area, a drain area, and a channel area), a gate electrode disposed on the channel area of the active layer, a source electrode electrically connected to the source area, and a drain electrode electrically connected to the drain area, wherein the gate electrode, the source area, and the drain area of the active layer include metal ions, the source area and the drain area are separate from each other, and the channel is disposed between the source area and the drain area.
    Type: Application
    Filed: April 18, 2012
    Publication date: November 29, 2012
    Inventors: Yun-Mo CHUNG, Jin-Wook SEO, Tak-Young LEE
  • Publication number: 20120299020
    Abstract: An LED package module for lighting includes a plurality of LED chips spacedly arranged on a hard substrate and a plurality of dome-shaped encapsulants arranged on the hard substrate in such a way that the encapsulants enclose the LED chips respectively. By means of the dome-shaped encapsulants, the light extracting rate of the LED chips is enhanced. On the surface of the hard substrate, no dam structure is needed; therefore, the amount of the encapsulant material used in the LED package module can be effectively saved.
    Type: Application
    Filed: June 28, 2011
    Publication date: November 29, 2012
    Inventor: Wei-Jen CHEN
  • Publication number: 20120292610
    Abstract: An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.
    Type: Application
    Filed: September 9, 2011
    Publication date: November 22, 2012
    Inventors: Seong-Min Wang, Ki-Wan Ahn, Joo-Sun Yoon, Ki-Hong Kim
  • Publication number: 20120295375
    Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
    Type: Application
    Filed: July 12, 2012
    Publication date: November 22, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Toru TAKAYAMA, Junya MARUYAMA, Yuugo GOTO, Yumiko OHNO
  • Publication number: 20120286297
    Abstract: The present invention discloses a LED package structure and a module thereof. The LED package structure comprises a metallic chip-carrying lead frame, a metallic anode lead frame, a metallic cathode lead frame and a forming resin. At least one LED chip is stuck to the metallic chip-carrying lead frame. The metallic anode lead frame and metallic cathode lead frame are arranged beside the metallic chip-carrying lead frame. The forming resin includes a top member, a first sidewall, and a second sidewall. The top member is arranged on the metallic chip-carrying lead frame and has an opening to reveal the LED chip. A reflective wall is formed along the opening. The first sidewall is arranged between the metallic chip-carrying lead frame and the metallic anode lead frame to join them. The second sidewall is arranged between the metallic chip-carrying lead frame and the metallic cathode lead frame to join them.
    Type: Application
    Filed: May 9, 2011
    Publication date: November 15, 2012
    Applicant: TAIWAN MICROPAQ CORPORATION
    Inventor: JIN SHEN WANG
  • Publication number: 20120286320
    Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
    Type: Application
    Filed: July 23, 2012
    Publication date: November 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
  • Publication number: 20120286280
    Abstract: A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulating layers and formed between a conductive coating and the source line. According to one aspect of the invention, an auxiliary capacitor is formed by the metal interconnection and the conductive coating serving as both electrodes and at least the lower insulating layer serving as a dielectric. The auxiliary capacitor is formed in a region of the interlayer insulating film in which the upper insulating layer has been removed by etching.
    Type: Application
    Filed: May 18, 2012
    Publication date: November 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hisashi Ohtani, Yasushi Ogata, Yoshiharu Hirakata
  • Patent number: 8309983
    Abstract: Provided is a light emitting device package. The light emitting device package includes a body having a cavity, a plurality of lead frames within the cavity, a light emitting device on at least one of the plurality of lead frames, and a moisture permeation prevention member between each of the lead frames and the body. Each of the lead frames includes a first frame disposed within the cavity, a second frame disposed on a lower surface of the body, and a third frame connecting the first frame to the second frame. The second frame of the lead frames is disposed within the body and at least one portion of the second frame is inclined with respect to the lower surface of the body. The moisture permeation prevention member is disposed on at least third frame of each of the lead frames.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: November 13, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Jae Park
  • Publication number: 20120280259
    Abstract: A system for displaying images is provided. The system includes an emissive display device including a plurality of pixel elements arranged in an array. Each pixel element includes a first substrate and a second substrate disposed thereunder, wherein the first substrate includes at least three subpixel regions. An organic light-emitting device is disposed between the first and second substrates and on the second substrate. At least one patterned polarizer film is disposed between the first and second substrates to be correspondingly located at one of the subpixel regions. At least one retarder film is disposed between the first and second substrates and affixed to the patterned polarizer film.
    Type: Application
    Filed: May 2, 2011
    Publication date: November 8, 2012
    Applicant: CHIMEI INNOLUX CORPORATION
    Inventors: Yoshihisa HATTA, Pao-Chung WU
  • Patent number: 8304787
    Abstract: A light-emitting device having a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts, while the light-emitting epitaxy structure is reverse-biased at a current density of ?10 ?A/mm2, and has a luminous efficiency not less than 50 lumen/Watt, while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2.
    Type: Grant
    Filed: June 7, 2010
    Date of Patent: November 6, 2012
    Assignee: Epistar Corporation
    Inventors: Chung-Ying Chang, Wen-Jia Huang, Chao-Hsu Lai, Tien Kun Lin
  • Publication number: 20120273806
    Abstract: An LED package structure with standby bonding pads for increasing wire-bonding yield includes a substrate unit, a light-emitting unit, a conductive wire unit and a package unit. The substrate unit has a substrate body and a plurality of positive pads and negative pads. The light-emitting unit has a plurality of LED bare chips. The positive electrode of each LED bare chip corresponds to at least two of the positive pads, and the negative electrode of each LED bare chip corresponds to at least two of the negative pads. Each wire is electrically connected between the positive electrode of the LED bare chip and one of the at least two positive pads or between the negative electrode of the LED bare chip and one of the at least two negative pads. The package unit has a light-permitting package resin body on the substrate body to cover the LED bare chips.
    Type: Application
    Filed: April 28, 2011
    Publication date: November 1, 2012
    Applicant: PARAGON SEMICONDUCTOR LIGHTING TECHNOLOGY CO., LTD
    Inventors: CHAO-CNIN WU, Shen-Ta Yang
  • Patent number: 8299476
    Abstract: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires. According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.
    Type: Grant
    Filed: September 14, 2007
    Date of Patent: October 30, 2012
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Jun Hee Lee, Jong Kyu Kim, Yeo Jin Yoon
  • Publication number: 20120269520
    Abstract: Lighting apparatuses and LED modules capable of both illumination and data transmission are disclosed. An exemplifying lighting apparatus has a LED module and a modulator. The LED module comprises a plurality of LED cells connected as a LED chain having two conductive pads. The light emitted from the LED module is visible. The modulator provides driving current to the LED module to transmit data.
    Type: Application
    Filed: April 19, 2011
    Publication date: October 25, 2012
    Inventors: Steve M. Hong, Min-Hsun Hsieh