Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract: A resonator using the MEMS technology is provided which improves the accuracy of a shape of electrodes so as avoid a short circuit that would otherwise be caused between input and output electrodes to thereby increase the reliability thereof. A resonator includes a substrate 101, an insulation layer 102 formed selectively on the substrate 101 as a sacrificial surface, a beam 103 formed on the substrate 101 via a space, a first support portion 104A formed on the insulation layer 102 of the same material as that of the beam 103, and electrodes formed with a space defined between the beam 103 and themselves for signals to be inputted thereinto and outputted therefrom. A sectional area of the beam 103 and a sectional area of the first support portion 104A are substantially equal in a section which is perpendicular to a longitudinal direction of the beam 103.

Abstract: A simple and cost-effective form of implementing a semiconductor component having a micromechanical microphone structure, including an acoustically active diaphragm as a deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counterelement as a counter electrode of the microphone capacitor, and means for applying a charging voltage between the deflectable electrode and the counter electrode of the microphone capacitor. In order to not impair the functionality of this semiconductor component, even during overload situations in which contact occurs between the diaphragm and the counter electrode, the deflectable electrode and the counter electrode of the microphone capacitor are counter-doped, at least in places, so that they form a diode in the event of contact. In addition, the polarity of the charging voltage between the deflectable electrode and the counter electrode is such that the diode is switched in the blocking direction.

Abstract: A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.

Abstract: A device being a micro-system and/or a nano-system which includes a first substrate, having at least one lower electrode and at least one dielectric layer, and includes an intermediate substrate extending across a main plane of the device and including a moving portion. The intermediate substrate is attached, outside the moving portion, by molecular bonding to the first substrate. The moving portion faces at least a portion of the lower electrode. The device also includes an upper substrate, attached to the intermediate substrate. The moving portion is movable between the lower electrode and the upper substrate. The first, intermediate, and upper substrates extend in a plane parallel to the main plane of the device. The lower electrode detects a component of the movement of the moving portion perpendicular to the plane of the device.

Abstract: A MEMS microphone system suited for harsh environments. The system uses an integrated circuit package. A first, solid metal lid covers one face of a ceramic package base that includes a cavity, forming an acoustic chamber. The base includes an aperture through the opposing face of the base for receiving audio signals into the chamber. A MEMS microphone is attached within the chamber about the aperture. A filter covers the aperture opening in the opposing face of the base to prevent contaminants from entering the acoustic chamber. A second metal lid encloses the opposing face of the base and may attach the filter to this face of the base. The lids are electrically connected with vias forming a radio frequency interference shield. The ceramic base material is thermally matched to the silicon microphone material to allow operation over an extended temperature range.

Abstract: After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.

Abstract: A microelectronic device including a substrate, at least a semi-conductor element, an anti metal ion layer, a non-doping oxide layer and a MEMS structure is provided. The substrate has a CMOS circuit region and a MEMS region. The semi-conductor element is configured within the CMOS circuit region of the substrate. The anti metal ion layer is disposed within the CMOS circuit region of the substrate and covers the semi-conductor element. The non-doping oxide layer is disposed on the substrate within the MEMS region. The MEMS structure is partially suspended above the non-doping oxide layer. The present invention also provides a MEMS package structure and a fabricating method thereof.

Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

Abstract: A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.

Abstract: In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.

Abstract: A sensor package is disclosed. One embodiment provides a sensor device having a carrier, a semiconductor sensor mounted on the carrier and an active surface. Contact elements are electrically connecting the carrier with the semiconductor sensor. A protective layer made of an inorganic material covers at least the active surface and the contact elements.

Abstract: A MEMS component includes a substrate in which at least one cavity is present. The cavity is closed off toward an active side of the substrate. An inactive side is arranged opposite the active side of the substrate, and the substrate is covered with a covering film on the inactive side.

Abstract: A multifunction MEMS element includes a first cantilever, a second cantilever and a MEMS component. The first cantilever, the second cantilever and the MEMS component together form a MEMS structure. The MEMS component includes an inductor device.

Abstract: Test dies having metrology test structures and methods of manufacture are disclosed. The method includes forming one or more metrology test structures in a test die that are identical to one or more structures formed in an adjacent product chip.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

Abstract: An electromechanical transducer includes multiple elements each including at least one cellular structure, the cellular structure including: a semiconductor substrate, a semiconductor diaphragm, and a supporting portion for supporting the diaphragm so that a gap is formed between one surface of the substrate and the diaphragm. The elements are separated from one another at separating locations of a semiconductor film including the diaphragm. Each of the elements includes in a through hole passing through a first insulating layer including the supporting portion and the semiconductor substrate: a conductor which is connected to the semiconductor film including the diaphragm; and a second insulating layer for insulating the conductor from the semiconductor substrate.

Abstract: A wafer level package including a shield connected to a plurality of conductive elements disposed on a silicon wafer. The conductive elements are arranged to individually enclose micro-structure elements located on the silicon wafer within cavities formed by the conductive elements for better shielding performance. The shield and the conductive elements function as the EMI shield.

Abstract: A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.

Abstract: A system and a method for forming a packaged MEMS device are disclosed. In one embodiment a packaged MEMS device includes a MEMS device having a first main surface with a first area along a first direction and a second direction, a membrane disposed on the first main surface of the MEMS device and a backplate adjacent to the membrane. The packaged MEMS device further includes an encapsulation material that encapsulates the MEMS device and that defines a back volume, the back volume having a second area along the first direction and the second direction, wherein the first area is smaller than the second area.

Abstract: A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.

Abstract: A method for producing oblique surfaces in a substrate, comprising a formation of recesses on both surfaces of the substrate, until the recesses are so deep that the substrate is perforated by the two recesses. One recess is produced going out from a first main surface in the region of a first surface, and the other recess is produced going out from the second main surface in the region of a second surface, so that the first surface and the second surface do not coincide along a surface normal of the main surfaces of the substrate. Subsequently, flexible diaphragms are attached over the recesses on each of the main surfaces. If a vacuum pressure is then produced inside the recesses, the flexible diaphragms each curve in the direction of the recesses until their surfaces facing the substrate come into contact with one another, generally in the center of the recesses.

Abstract: According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

Abstract: A fully embedded micromechanical device and a system on chip is manufactured on an SOI-substrate. The micromechanical device comprises a moveable component having a laterally extending upper and lower surface and vertical side surfaces. The upper surface is adjacent to an upper gap which laterally extends over at least a part of the upper surface and results from the removal of a shallow trench insulation material. The lower surface is adjacent to a lower gap which laterally extends over at least a part of the lower surface and results from the removal of the buried silicon oxide layer. The side surfaces of the movable component are adjacent to side gaps which surround at least a part of the vertical side surfaces of the moveable component and result from the removal of a deep trench insulation material.

Abstract: A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.

Abstract: An overmolded pressure sensor package is provided. The pressure sensor die (Pcell) is capped so that the Pcell has enhanced rigidity to withstand stress effects produced by the molding encapsulant. The Pcell cap includes a hole located away from the Pcell diaphragm, so that external gas pressure can be experienced by the Pcell, while at the same time directing moisture away from the diaphragm. Gel does not need to be used, and instead a soft film can be deposited on the Pcell to protect the Pcell diaphragm from excess moisture, if needed. The Pcell cap can take the form of, for example, a dummy silicon wafer or a functional ASIC.

Abstract: An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.

Abstract: Packages and methods for 3D integration are disclosed. In various embodiments, a first integrated device die having a hole is attached to a package substrate. A second integrated device die can be stacked on top of the first integrated device die. At least a portion of the second integrated device die can extend into the hole of the first integrated device die. By stacking the two dies such that the portion of the second integrated device die extends into the hole, the overall package height can advantageously be reduced.

Abstract: A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of the microphone capacitor, and an arrangement for detecting and analyzing the capacitance changes of the microphone capacitor. The diaphragm is realized in a diaphragm layer above the semiconductor substrate of the component and covers a sound opening in the substrate rear. The counter element is developed in a further layer above the diaphragm. This further layer generally extends across the entire component surface and compensates level differences, so that the entire component surface is largely planar according to this additional layer.

Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

Abstract: MEMS devices, packaged MEMS devices, and methods of manufacture thereof are disclosed. In one embodiment, a microelectromechanical system (MEMS) device includes a first MEMS functional structure and a second MEMS functional structure. An interior region of the second MEMS functional structure has a pressure that is different than a pressure of an interior region of the first MEMS functional structure.

Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element.

Abstract: A packaged sensor MEMS (100) has a semiconductor chip (101) with a protected cavity (102) including a sensor (105), the cavity surrounded by solder bumps (130) attached to the chip terminals; further a leadframe with elongated and radially positioned leads (131), the central lead ends (131a) attached to the bumps. Insulating material (120) encapsulates chip and central lead ends, leaving the chip surface (101a) opposite the cavity and the peripheral lead ends (131b) un-encapsulated. The un-encapsulated peripheral lead ends are bent into cantilevers for attachment to a horizontal substrate (160), the cantilevers having a geometry to accommodate, under a force lying in the plane of the substrate, elastic bending and stretching beyond the limit of simple elongation based upon inherent material characteristics, especially when supported by lead portions with curved, toroidal, or multiple-bendings geometries.

Abstract: A resonator body has an inversion gate, an accumulation gate, and a center region. The resonator body also has a source contact coupled to the center region and a drain contact coupled to the center region. The resonator body further has a first dielectric layer coupled between the inversion gate and the center region. The resonator body also has a second dielectric layer coupled between the accumulation gate and the center region. A resonant body transistor is also disclosed. The resonant body transistor has an inversion gate electrode, an accumulation gate electrode, a source electrode, a drain electrode, and a plurality of anchor beams. The resonant body transistor also has a resonator body coupled-to and suspended-from the inversion gate electrode, the accumulation gate electrode, the source electrode, and the drain electrode by the plurality of anchor beams. A resonant body oscillator is also disclosed.

Abstract: A semiconductor package having an air pressure sensor and methods to form a semiconductor package having an air pressure sensor are described. For example, a semiconductor package includes a plurality of build-up layers. A cavity is disposed in one or more of the build-up layers. An air pressure sensor is disposed in the plurality of build-up layers and includes the cavity and an electrode disposed above the cavity. Also described are various approaches to fabricating a semiconductor package having a hermetically sealed region.

Abstract: An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

Abstract: A method for producing a MEMS device having improved charge elimination characteristics includes providing a substrate having one or more layers, and applying a first charge elimination layer onto at least one portion of one given layer of the substrate. The method may then (1) apply a sacrificial layer onto the first charge elimination layer, (2) apply a second charge elimination layer onto at least a portion of the sacrificial layer, and (3) deposit a movable layer onto at least a portion of the second charge elimination layer. To form a structure within the movable layer the method may etch the movable layer. The method may then etch the sacrificial layer to release the structure.

Abstract: A semiconductor device package having a cavity formed using film-assisted molding techniques is provided. Through the use of such techniques the cavity can be formed in specific locations in the molded package, such as on top of a device die mounted on the package substrate or a lead frame. In order to overcome cavity wall angular limitations introduced by conformability issues associated with film-assisted molding, a gel reservoir feature is formed so that gel used to protect components in the cavity does not come in contact with a lid covering the cavity or the junction between the lid and the package attachment region. The gel reservoir is used in conjunction with a formed level setting feature that controls the height of gel in the cavity. Benefits include decreased volume of the cavity, thereby decreasing an amount of gel-fill needed and thus reducing production cost of the package.

Abstract: A semiconductor package having a mechanical fuse therein and methods to form a semiconductor package having a mechanical fuse therein are described. For example, a semiconductor structure includes a semiconductor package. A semiconductor die is housed in the semiconductor package. A microelectromechanical system (MEMS) device is housed in the semiconductor package. The MEMS device has a suspended portion. A mechanical fuse is housed in the semiconductor package and either coupled to, or decoupled from, the suspended portion of the MEMS device.

Abstract: A capacitive microphone transducer integrated into an integrated circuit includes a fixed plate and a membrane formed in or above an interconnect region of the integrated circuit. A process of forming an integrated circuit containing a capacitive microphone transducer includes etching access trenches through the fixed plate to a region defined for the back cavity, filling the access trenches with a sacrificial material, and removing a portion of the sacrificial material from a back side of the integrated circuit.

Abstract: Embodiments relate to integrated circuit (IC) sensors and sensing systems and methods. In an embodiment, an IC sensor device includes at least one sensing element; a framing element disposed around the at least one sensing element at a wafer-level; and a package having at least one port predefined at the wafer-level by the framing element, the at least one port configured to expose at least a portion of the at least one sensing element to an ambient environment.

Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

Abstract: A package structure is provided, including: a substrate having a ground pad and an MEMS element; a lid disposed on the substrate for covering the MEMS element; a wire segment electrically connected to the ground pad; an encapsulant encapsulating the lid and the wire segment; and a circuit layer formed on the encapsulant and electrically connected to the wire segment and the lid so as to commonly ground the substrate and the lid, thereby releasing accumulated electric charges on the lid so as to improve the reliability of the MEMS system and reduce the number of I/O connections.

Abstract: A stress isolator that allows a sensor to be attached to materials of the same coefficient of thermal expansion and still provide the required elastic isolation between the sensor and the system to which it is mounted. The isolator is made of two materials, borosilicate glass and silicon. The glass is the same material as the mounting surface of the microelectromechanical system (MEMS) sensors. The silicon makes an excellent isolator, being very elastic and easy to form into complex shapes. The two materials of the isolator are joined using an anodic bond. The construction of the isolator can be specific to different types of MEMS sensors, making the most of their geometry to reduce overall volume.

Abstract: A package assembly comprises a package base, a sensor die, an isolation plate, and a package interface plate. The isolation plate is bonded to the sensor die and has a plurality of flexible beams. Each flexible beam is configured to deflect under stress such that effects on the sensor die of a thermal mismatch between the package base and the sensor die are reduced. The package interface plate is bonded to the isolation plate and the package base. The package interface plate is configured to limit the maximum distance each flexible beam is able to deflect.

Abstract: In one example, a stress gauge for an integrated circuit product is disclosed that includes a layer of insulating material, a body positioned at least partially in the layer of insulating material, wherein the body is comprised of a material having a piezoelectric constant of at least about 0.1 pm/V, and a plurality of spaced apart conductive contacts, each of which is conductively coupled to the body.

Abstract: A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.

Abstract: A method for fabricating a patterned polyimide film, wherein the method comprises steps as follows: Firstly, a polyimide film is provided on a substrate. A wet planarization process is then performed to remove a portion of the polyimide film. Subsequently the planarized polyimide film is patterned.

Abstract: A method for forming a stacked integrated circuit package of primary dies on a carrier die, includes forming electrically conductive pillars at connection pads defined on an active face of a carrier wafer incorporating carrier integrated circuits, the electrically conductive pillars providing electrical connections to said carrier integrated circuits; attaching primary dies to the active face of the carrier wafer, each supporting electrically conductive pillars at connection pads defined on an active face of the primary die; encapsulating the active face of the carrier wafer and the primary dies attached thereto in an insulating material; producing a wafer package by removing a thickness of the insulating layer sufficient to expose the electrically conductive pillars; and singulating the carrier wafer to form stacked integrated circuit packages, each package comprising at least one primary die on a carrier die.

Abstract: A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.