Abstract: According to one embodiment of the present invention, a memory cell array comprises a plurality of voids, the spatial positions and dimensions of the voids being chosen such that mechanical stress occurring within the memory cell array is at least partly compensated by the voids.

Abstract: A method is provided for producing a thin-film photovoltaic device. The method includes forming on a substrate a first thin-film absorber layer using a first deposition process. A second thin-film absorber layer is formed on the first thin-film absorber layer using a second deposition process different from the first deposition process. The first and second thin-film absorber layers are each photovoltaically active regions and the second thin-film absorber layer has a smaller concentration of defects than the first thin-film absorber layer.

Abstract: At least one embodiment of the invention relates to an X-ray radiation detector, in particular for use in a CT system. In at least one embodiment, the X-ray radiation detector includes a semiconductor material used for detection, at least two ohmic contacts between the semiconductor material and a contact material, the semiconductor material and contact material each having a specific excitation energy of the charge carriers, with the excitation energy of the contact material corresponding to the excitation energy of the semiconductor material. At least one embodiment of the invention furthermore relates to a CT system in which an X-ray radiation detector is used, the X-ray radiation detector advantageously having at least two ideal ohmic contacts according to at least one embodiment of the invention.

Abstract: A tandem module photovoltaic cell can include an organic module in parallel with a semiconductor module.

Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.

Abstract: The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

Abstract: A thermal deformation preventing layer is located between a recording photoconductive layer, which contains a-Se as a principal constituent, and a crystallization preventing layer, which is constituted of an a-Se layer containing at least one kind of element selected from the group consisting of As, Sb, and Bi. The thermal deformation preventing layer is constituted of an a-Se layer containing at least one kind of specific substance selected from the group consisting of a metal fluoride, a metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5?x?1.5.

Abstract: Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.

Abstract: A structuring device is for structuring a plate-like element.

Abstract: A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.

Abstract: Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0?x?1, and ranges therebetween; 0?y?0.2, and ranges therebetween; 0.001?z?0.02, and ranges therebetween; and 0?w?2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.

Abstract: Photovoltaic devices (i.e., solar cells) are formed using non-contact patterning apparatus (e.g., a laser-based patterning systems) to define contact openings through a passivation layer, and direct-write metallization apparatus (e.g., an inkjet-type printing or extrusion-type deposition apparatus) to deposit metallization into the contact openings and over the passivation surface. The metallization includes two portions: a contact (e.g., silicide-producing) material is deposited into the contact openings, then a highly conductive metal is deposited on the contact material and between the contact holes. The device wafers are transported between the patterning and metallization apparatus in hard tooled registration using a conveyor mechanism. Optional sensors are utilized to align the patterning and metallization apparatus to the contact openings. An extrusion-type apparatus is used to form grid lines having a high aspect central metal line that is supported on each side by a transparent material.

Abstract: A semiconductor nanowire-based photosensor includes a substrate, at least a top surface of the substrate being formed of an insulator, two electrodes spaced at a predetermined interval apart from each other on the substrate, metal catalyst layers disposed respectively on the two electrodes, and visible-range semiconductor nanowires grown from the metal catalyst layers on the two electrodes. The semiconductor nanowires grown from one of the metal catalyst layers are in contact with the semiconductor nanowires grown from the other metal catalyst layer, while the semiconductor nanowires grown respectively from the metal catalyst layers on the two electrodes are floated between the two electrodes over the substrate.

Abstract: A room temperature radiation detector is made from a semi-insulating Cd1-xZnxTe crystal, where 0?x?1, having a first electrode made of Pt or Au on one surface of the crystal and a second electrode of Al, Ti or In on another surface of the crystal. In use of the crystal to detect radiation events, an electrical bias is applied between the first and second electrodes.

Abstract: The present invention provides method of treating semiconductor surfaces (e.g., CIGS) using various solvents (including ionic solvents and eutectics), and methods preparing photovoltaic cells comprising treated CIGS materials.

Abstract: Disclosed is a method for manufacturing a photoelectric converter wherein a lower electrode layer, a compound semiconductor thin film having a chalcopyrite structure which serves as a light absorptive layer and a light-transmitting electrode layer that are laminated to form layers are each patterned by photolithography, thereby minimizing damages to the crystals of the compound semiconductor thin film.

Abstract: A photovoltaic cell can include a heterojunction between semiconductor layers.

Abstract: A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

Abstract: A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.

Abstract: A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

Abstract: A phase change memory device and a method of fabricating the same are disclosed. The phase change memory device includes a first conductor pattern having a first conductivity type and a sidewall. A second conductor pattern is connected to the sidewall of the first conductor pattern to form a diode. A phase change layer is electrically connected to the second conductor pattern and a top electrode is connected to the phase change layer.

Abstract: A memory cell device, including a memory material element switchable between electrical property states by the application of energy, includes depositing an electrical conductor layer, depositing dielectric material layers and etching to create a first electrode and voids. A memory material is applied into a void to create a memory material element in contact with the first electrode. A second electrode is created to contact the memory material element.

Abstract: A method is provided for forming a Group IBIIIAVIA solar cell absorber layer including indium (In) and gallium (Ga) that are distributed substantially uniformly between the top surface and the bottom surface of the absorber layer. In one embodiment method includes forming a precursor by depositing a metallic layer including copper (Cu), indium (In) and gallium (Ga) on the base, and depositing a film comprising selenium (Se) and tellurium (Te) on the metallic layer. In the precursor, the molar ratio of Te to Ga is equal to or less than 1. In the following step, the precursor is heated to a temperature range of 400-600° C. to form the Group IBIIIAVIA solar cell absorber layer.

Abstract: A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.

Abstract: An image detection apparatus includes a substrate, a middle layer formed on the substrate, the middle layer having a quadrilateral hole, and a photoelectric conversion layer deposited on the middle layer. The curvature radius of each of the corner portions of the quadrilateral hole is greater than or equal to 2 ?m. Further, the photoelectric conversion layer is made of an amorphous material.

Abstract: Provided is an electro-medical imaging apparatus manufactured using a thin film transistor (TFT) array including chalcogen-based semiconductor elements that can generate and store an electric signal from an X-ray signal so as to be able to replace a traditional film type X-ray reader.

Abstract: A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a a metallic precursor layer with a dopant structure. The metallic precursor layer including Group IB and Group IIIA materials such as Cu, Ga and In are deposited on a base. The dopant structure is formed on the metallic precursor layer, wherein the dopant structure includes a stack of one or more Group VIA material layers such as Se layers and one or more a dopant material layers such as Na.

Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.