Abstract: A method of manufacturing a polycrystalline silicon film includes: depositing a catalyst layer including nickel and depositing nickel nanoparticles on a substrate; exposing the catalyst layer and the nanoparticles to at least silane gas; and heat treating the substrate coated with the catalyst layer and the nanoparticles during at least part of the exposing to silane gas in growing a silicon based film on the substrate.

Abstract: An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are fog led over the electrode material for performing a device function.

Abstract: The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: Novel structures of photovoltaic cells (also called as solar cells) are provided. The cells are based on nanoparticles or nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators, and may be metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, commercial, residential and industrial applications.

Abstract: The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film AIGS, AIS, and AGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: This invention relates to compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MB(ER)(ER)} and {MB(ER)(ER)}, wherein MA is Ag, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds, precursor materials and methods for preparing photovoltaic layers and thin films thereof.

Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers.

Abstract: Novel structures of photovoltaic cells (also known as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: Novel structures of photovoltaic cells (also known as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.

Abstract: This invention relates to methods for making materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to methods for making AIGS, AIS or AGS materials by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: This invention relates to methods and articles using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MB(ER)(ER)} and {MA(ER)(ER)}, wherein MA is Ag, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: This invention includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by depositing a precursor having the predetermined stoichiometry onto the substrate and converting the deposited precursor into a photovoltaic absorber material. This invention further includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by (a) providing a polymeric precursor having the predetermined stoichiometry; (b) providing a substrate; (c) depositing the precursor onto the substrate; and (d) heating the substrate.

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Abstract: Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a?) that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

Abstract: This invention includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by depositing a precursor having the predetermined stoichiometry onto the substrate and converting the deposited precursor into a photovoltaic absorber material. This invention further includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by (a) providing a polymeric precursor having the predetermined stoichiometry; (b) providing a substrate; (c) depositing the precursor onto the substrate; and (d) heating the substrate.

Abstract: Methods for forming a photovoltaic device include adjusting a deposition power for depositing a buffer layer including germanium on a transparent electrode. The deposition power is configured to improve device efficiency. A p-type layer is formed on the buffer layer. An intrinsic layer and an n-type layer are formed over the p-type layer.

Abstract: A backside illumination semiconductor image sensor, wherein each photodetection cell includes a semiconductor body of a first conductivity type of a first doping level delimited by an insulation wall, electron-hole pairs being capable in said body after a backside illumination; on the front surface side of said body, a ring-shaped well of the second conductivity type, this well delimiting a substantially central region having its upper portion of the first conductivity type of a second doping level greater than the first doping level; and means for controlling the transfer of charge carriers from said body to said upper portion.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: A structure and method operable to create a reusable template for detachable thin semiconductor substrates is provided. The template has a shape such that the 3-D shape is substantially retained after each substrate release. Prior art reusable templates may have a tendency to change shape after each subsequent reuse; the present disclosure aims to address this and other deficiencies from the prior art, therefore increasing the reuse life of the template.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: A sensor includes a substrate, a membrane, first and second spacers arranged on the substrate, a first support structure which is supported, laterally next to the membrane, by the first spacer and contacts a first electrode of a first main side of the membrane which faces the substrate, and a second support structure which is supported, laterally next to the membrane, by the second spacer and contacts a second electrode on a second main side of the membrane which is opposite the first main side, so that the membrane is suspended via the first and second spacers and is electrically connected to contact areas of the substrate.

Abstract: A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001>direction predominantly towards either the <11 20> or the <1 100> family of directions. For a <11 20> off-cut substrate, a laser diode cavity may be oriented along the <1 100> direction parallel to lattice surface steps of the substrate in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For a <1 100> off-cut substrate, the laser diode cavity may be oriented along the <1 100> direction orthogonal to lattice surface steps of the substrate in order to provide a cleaved laser facet that is aligned with the surface lattice steps.

Abstract: A thin film transistor (TFT) array substrate for an X-ray detector and a method of fabricating the same are provided. The TFT array substrate includes a substrate, a gate line formed on the substrate, a data line crossing the gate line, a thin film transistor including a gate electrode, a source electrode, and a drain electrode, a first electrode connected to the drain electrode, a passivation layer formed over the gate line, the data line, the thin film transistor and the first electrode, a photoconductor formed over the passivation layer and connected to the first electrode, and a second electrode formed on the photoconductor.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: There is provided a semiconductor film formed on a surface of a substrate and containing a crystalline substance, wherein the semiconductor film has a central region including a center of a surface of the semiconductor film and a peripheral region located around the central region, and a crystallization ratio in the peripheral region of the semiconductor film is higher than a crystallization ratio in the central region. There is also provided a photoelectric conversion device including the semiconductor film.

Abstract: Discloses is a method for depositing a thin metal oxide film on a substrate, comprising: providing a substrate (104); sequentially and alternatingly exposing a surface of said substrate to a first metal precursor and a first oxidant precursor, so as to deposit a first portion (116) of said metal oxide film (114) having a first thickness; and sequentially and alternatingly exposing the surface of the substrate to a second metal precursor and a second oxidant precursor, so as to deposit a second portion (118) of said metal oxide film (114) having a second thickness over said first portion of said metal oxide film, wherein the second oxidant precursor is ozone or oxygen plasma, while the first oxidant precursor is a milder oxidant than ozone. Also disclosed is a solar cell (100) including a metal oxide passivation film (114) deposited by said method.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

Abstract: A solid-state imaging element includes a wiring layer; a charge accumulation unit including a semiconductor layer provided on the wiring layer; and a photoelectric conversion film provided on the semiconductor layer, wherein a pinning layer of a conductivity type opposite to a conductivity type of the charge accumulation unit, the pinning layer including an opening, is provided in a region of the charge accumulation unit, the region being located at an interface between the charge accumulation unit and the photoelectric conversion film.

Abstract: An X-ray detection device includes a gate electrode and a lower electrode on a substrate and laterally spaced from each other, a dielectric layer covering the gate electrode and the lower electrode, and a conductive pattern on the dielectric layer at a side of the gate electrode adjacent to the lower electrode and overlapping the lower electrode. The device also includes a source electrode spaced apart from the conductive pattern that is on the dielectric layer at the other side of the gate electrode, and an interlayer insulation layer covering the conductive pattern and the source electrode. A collector electrode, a photoelectric conversion layer, and a bias electrode are sequentially stacked on the interlayer insulation layer.

Abstract: FET configurations in which two (or more) facets are exposed on a surface of a semiconductor channel, the facets being angled with respect to the direction of the channel, allow for conformal deposition of a convex or concave S/D. A convex tip of the S/D enhances electric fields at the interface, reducing the resistance between the S/D and the channel. In contrast, a S/D having a concave tip yields a dual-gate FET that emphasizes reduced short-channel effects rather than electric field enhancement. The use of self-limiting, selective wet etches to expose the facets facilitates process control, control of interface chemistry, and manufacturability.

Abstract: A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.

Abstract: The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.

Abstract: A needle-like structure of silicon is provided. A crystalline silicon region is formed over a metal substrate by an LPCVD method, whereby whisker-like crystalline silicon which is a polycrystalline body and grows in the <110> direction or the <211> direction with {111} the plane as a twin boundary can be obtained. Whisker-like crystalline silicon grows while forming a twin crystal (introducing stacking faults), and an initial nucleus is provided so that the normal direction <111> of the twin boundary is always included in the plane perpendicular to the growth direction of whisker-like crystalline silicon (in a transverse cross section). Such a material is used as a negative electrode active material of a lithium-ion secondary battery and for a photoelectric conversion device such as a solar battery.

Abstract: In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 ?m or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells.

Abstract: The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.

Abstract: Provided is a thin film solar cell module including series-connected unit cells, wherein a thin film silicon photoelectric conversion unit and a compound semiconductor-containing photoelectric conversion unit are electrically connected in each unit cell. Each unit cell includes at least a transparent electrode, an amorphous silicon-containing photoelectric conversion unit, an intermediate transparent electrode layer, a photoelectric conversion unit, a compound semiconductor-based photoelectric conversion unit, and a metal electrode in this order from the light incident side. In each of the unit cells, the photoelectric conversion unit and the compound semiconductor-based photoelectric conversion unit are connected in series to form a series-connected component. The series-connected component is connected to a first photoelectric conversion unit in parallel via the transparent electrode and the intermediate transparent electrode layer.

Abstract: A photoelectric conversion device having a new anti-reflection structure is provided. A photoelectric conversion device includes a first-conductivity-type crystalline semiconductor region that is provided over a conductive layer; a crystalline semiconductor region that is provided over the first-conductivity-type crystalline semiconductor region and has an uneven surface by including a plurality of whiskers including a crystalline semiconductor; and a second-conductivity-type crystalline semiconductor region that covers the uneven surface of the crystalline semiconductor region having the uneven surface, the second conductivity type being opposite to the first conductivity type. In the photoelectric conversion device, a concentration gradient of an impurity element imparting the first conductivity type is formed from the first-conductivity-type crystalline semiconductor region toward the crystalline semiconductor region having the uneven surface.

Abstract: The present invention provides a method and apparatus for edge film stack removal process for fabricating photovoltaic devices. In one embodiment, a method for manufacturing solar cell devices on a substrate includes providing a substrate into a chemical vapor deposition chamber, contacting a shadow frame disposed in the deposition chamber to a periphery region of the substrate, depositing a silicon-containing layer on the substrate through an aperture defined by the shadow frame, transferring the substrate to a physical vapor deposition chamber, depositing a transparent conductive layer on the silicon-containing layer, transferring the substrate to a laser edge removal tool, and laser scribing the layers formed on the periphery region of the substrate.

Abstract: A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.