Including Amorphous Semiconductor (epo) Patents (Class 257/E31.047)
  • Publication number: 20110140106
    Abstract: The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.
    Type: Application
    Filed: November 15, 2010
    Publication date: June 16, 2011
    Inventor: Leonard Forbes
  • Publication number: 20110139216
    Abstract: A solar cell and a manufacturing method thereof are disclosed. The solar cell in accordance with the present invention includes a substrate 100; a lower electrode 111a formed on the substrate 100; a photoelectric element unit 200a including a polycrystalline photoelectric element 210 formed on the lower electrode 111a and formed by stacking a plurality of polycrystalline semiconductor layers 211a, 212a, and 213a, and a amorphous photoelectric element 220 formed on the polycrystalline photoelectric element 210 and formed by stacking a plurality of amorphous semiconductor layers 221, 222, and 223; and an upper electrode 400 formed on the photoelectric element unit 200a.
    Type: Application
    Filed: August 10, 2009
    Publication date: June 16, 2011
    Applicant: TG Solar Corporation
    Inventors: Yoo Jin Lee, In Goo Jang, Dong Jee Kim, Seok Pil Jang, Young Ho Lee, Byung Lee, II, Tack Yong Jang
  • Patent number: 7955890
    Abstract: Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.
    Type: Grant
    Filed: June 17, 2009
    Date of Patent: June 7, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Soo Young Choi, Jriyan Jerry Chen, Tae Kyung Won, Dong-Kil Yim
  • Publication number: 20110104849
    Abstract: A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm?3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm?3.
    Type: Application
    Filed: January 10, 2011
    Publication date: May 5, 2011
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventor: Akira TERAKAWA
  • Publication number: 20110089420
    Abstract: Systems, methods, devices, and products of processes consistent with the innovations herein relate to thin-film solar cells having contacts on the backside, only. In one exemplary implementation, there is provided a thin film device. Moreover, such device may comprise a substrate, and a layer of silicon or silicon-containing material positioned on a first side of the substrate, wherein the layer comprises a n-doped region and a p-doped region. In some exemplary implementations, the device may be fabricated such that the n-doped region and the p-doped region are formed on the backside surface of the layer to create an electrical structure characterized by a P-type anode and an N-type cathode forming a junction positioned along the backside surface of the layer.
    Type: Application
    Filed: August 16, 2010
    Publication date: April 21, 2011
    Inventor: Venkatraman Prabhakar
  • Patent number: 7923357
    Abstract: A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: April 12, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Mitsuhiro Okada, Takahiro Miyahara, Toshiharu Nishimura
  • Patent number: 7915611
    Abstract: In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 ?m or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: March 29, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuyuki Arai
  • Publication number: 20110067756
    Abstract: A thin film solar cell includes; a first electrode, a first active layer disposed on the first electrode, a porous intermediate layer disposed on the first active layer, a second active layer disposed on the intermediate layer and a second electrode disposed on the second active layer.
    Type: Application
    Filed: August 25, 2010
    Publication date: March 24, 2011
    Applicant: SAMGUNG ELECTRONICS CO., LTD.
    Inventor: Seung-Jae JUNG
  • Publication number: 20110061732
    Abstract: A solar cell is shown. The solar cell includes a semiconductor substrate of a first conductive type; a first amorphous semiconductor layer including a crystalline portion; a first electrode portion on the semiconductor substrate; and a second electrode portion on the semiconductor substrate.
    Type: Application
    Filed: February 19, 2010
    Publication date: March 17, 2011
    Inventors: Hyunjin Yang, Heonmin Lee, Junghoon Choi, Kwangsun Ji
  • Publication number: 20110061733
    Abstract: The objective of this invention is to use chemical additives to increase the rate of deposition processes for the amorphous silicon film (?Si:H) and/or the microcrystalline silicon film (?CSi:H), and improve the electrical current generating capability of the deposited films for photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.
    Type: Application
    Filed: August 31, 2010
    Publication date: March 17, 2011
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Patrick Timothy Hurley, Robert Gordon Ridgeway, Katherine Anne Hutchison, John Giles Langan
  • Publication number: 20110056550
    Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate that contains first impurities of a first conductive type and is formed of a crystalline semiconductor, a first field region that is positioned on an incident surface of the substrate and contains second impurities of a second conductive type, an emitter region that contains third impurities of a third conductive type, is formed of a non-crystalline semiconductor, and is positioned on a non-incident surface of the substrate opposite the incident surface of the substrate, a first electrode electrically connected to the emitter region, and a second electrode electrically connected to the substrate.
    Type: Application
    Filed: September 7, 2010
    Publication date: March 10, 2011
    Inventors: Wonseok CHOI, Kwangsun Ji, Heonmin Lee, Hojung Syn, Junghoon Choi, Hyunjin Yang
  • Publication number: 20110036393
    Abstract: The present invention discloses a thin film solar cell module and a manufacturing method thereof. The thin film solar cell comprises, from bottom to top, a first substrate, a first electrode, an absorber layer, and a second electrode layer. A first current output region formed at the positive electrode of the thin film solar cell module. A first current output element is disposed in the first current output region, and the absorber layer further comprises at least a first gap which is disposed in the first current output region to increase the contact between the first electrode layer and the second electrode layer. The useless current, the resistance and the heat generated there are reduced. The heat generated there is also reduced.
    Type: Application
    Filed: August 13, 2010
    Publication date: February 17, 2011
    Inventors: Chia-Yu Chen, Hui-Chu Lin, Chien-Chung Bi
  • Patent number: 7888167
    Abstract: To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.
    Type: Grant
    Filed: April 13, 2009
    Date of Patent: February 15, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Toriumi, Tomokazu Yokoi, Makoto Furuno
  • Publication number: 20110030760
    Abstract: The photovoltaic device comprises a substrate, deposited on said substrate, a first contact layer; a second contact layer; between said first and second contact layers: a first layer stack comprising a first p-doped layer, a first at least substantially intrinsic layer of amorphous hydrogenated silicon and a first n-doped layer; a second layer stack comprising a second p-doped layer, a second at least substantially intrinsic layer of microcrystalline hydrogenated silicon and a second n-doped layer. The thickness of the first at least substantially intrinsic layer is between 160 nm and 400 nm, and the thickness of the second at least substantially intrinsic layer is between 1 ?m and 2 ?m.
    Type: Application
    Filed: April 17, 2009
    Publication date: February 10, 2011
    Applicant: OERLIKON TRADING AG, TRUEBBACH
    Inventors: Johannes Meier, Ulrich Kroll, Julien Bailat
  • Publication number: 20110026034
    Abstract: The invention relates to a carrier for a thin layer and a method for the analysis of molecular interactions on and/or in such a thin layer. A thin layer disposed on a carrier is illuminated with electromagnetic radiation from at least one radiation source and a reflected radiation part on boundary surfaces of the thin layer is detected by means of an optoelectronic converter that converts the detected radiation into a frequency- and intensity-dependant photocurrent. A reading voltage is applied to the optoelectronic converter. By changing the reading voltage, the spectral sensitivity of the optoelectronic converter is varied such that a substantially constant photocurrent is obtained. Alternatively or in addition to varying the spectral sensitivity by changing the reading voltage, the reflected radiation part is detected with an optoelectronic converter that is designed as a sensor layer in the carrier.
    Type: Application
    Filed: August 9, 2008
    Publication date: February 3, 2011
    Inventors: Guenter Gauglitz, Guenther Proll, Florian Proell, Lutz Steinle, Markus Schubert
  • Publication number: 20110012222
    Abstract: A method of making a crystalline semiconductor structure provides a photonic device by employing low thermal budget annealing process. The method includes annealing a non-single crystal semiconductor film formed on a substrate to form a polycrystalline layer that includes a transition region adjacent to a surface of the film and a relatively thicker columnar region between the transition region and the substrate. The transition region includes small grains with random grain boundaries. The columnar region includes relatively larger columnar grains with substantially parallel grain boundaries that are substantially perpendicular to the substrate. The method further includes etching the surface to expose the columnar region having an irregular serrated surface.
    Type: Application
    Filed: July 17, 2009
    Publication date: January 20, 2011
    Inventors: Hans S. Cho, Theodore I. Kamins
  • Publication number: 20100327286
    Abstract: A light sensing circuit capable of enhancing a reliability by lowering a dependency on a temperature change without using a resistor, a backlight control apparatus having the same, and an LCD device having the same. The light sensing circuit includes a first MOS-transistor; and a second MOS-transistor serially connected to the first MOS-transistor between a first power terminal and a ground terminal, in which a second power terminal is connected to each gate terminal of the first MOS-transistor and the second MOS-transistor, and an optical amount detecting terminal is connected to a common connection point between a drain terminal of the first MOS-transistor and a source terminal of the second MOS-transistor.
    Type: Application
    Filed: August 27, 2010
    Publication date: December 30, 2010
    Applicant: LG Display Co., Ltd.
    Inventors: Jeong-Won Yoon, Su-Hwan Moon
  • Publication number: 20100323472
    Abstract: A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.
    Type: Application
    Filed: August 31, 2010
    Publication date: December 23, 2010
    Applicant: IMEC
    Inventors: Frédéric Dross, Emmanuel Van Kerschaver, Guy Beaucarne
  • Publication number: 20100323471
    Abstract: Methods for making solar cells are described. The methods include selectively etching strips formed by laser scribing to remove oxides formed during laser scribing.
    Type: Application
    Filed: August 21, 2008
    Publication date: December 23, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Hien-Minh Huu Le, Tzay-Fa Su, David Tanner
  • Publication number: 20100313935
    Abstract: A monolithically-integrated photovoltaic module is provided. The module includes an insulating substrate and a lower electrode above the substrate. The method also includes a lower stack of microcrystalline silicon layers above the lower electrode, an upper stack of amorphous silicon layers above the lower stack, and an upper electrode above the upper stack. The upper and lower stacks of silicon layers have different energy band gaps. The module also includes a built-in bypass diode vertically extending in the upper and lower stacks of silicon layers from the lower electrode to the upper electrode. The built-in bypass diode includes portions of the lower and upper stacks that have a greater crystalline portion than a remainder of the lower and upper stacks.
    Type: Application
    Filed: June 8, 2010
    Publication date: December 16, 2010
    Applicant: THINSILICION CORPORATION
    Inventors: Kevin Michael Coakley, Guleid Hussen, Jason Stephens, Kunal Girotra, Samuel Rosenthal
  • Publication number: 20100317146
    Abstract: Substrates for solar cells are prepared by etching a plurality of metallurgical grade wafers; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride without disturbing the aluminum layer. A solar cell is then fabricated on the front surface of the wafer while the aluminum remain to serve as the back contact of the cell.
    Type: Application
    Filed: August 24, 2010
    Publication date: December 16, 2010
    Applicant: SUNPREME, LTD.
    Inventors: Ashok Sinha, Wen Ma
  • Publication number: 20100288348
    Abstract: A solar cell device is provided, including a transparent substrate, a composite transparent conductive layer disposed over the transparent substrate, a photovoltaic element formed over the composite transparent conductive layer, and an electrode layer disposed over the photovoltaic element. In one embodiment, the composite transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer sequentially stacked over the transparent substrate, and the first transparent conductive layer is made of lithium and fluorine-codoped tin oxide and the second transparent conductive layer is made of a material selected from a group consisting of zinc oxide and titanium dioxide.
    Type: Application
    Filed: August 21, 2009
    Publication date: November 18, 2010
    Applicant: Industrial Technology Research Institute
    Inventors: Chin-Ching Lin, Mei-Ching Chiang, Hsiang-Chuan Chen, Chao-Jen Ho, Kuo-Chuang Chiu
  • Publication number: 20100282276
    Abstract: Provided are methods and apparatuses for processing photovoltaic cell metallic substrates to remove various surface defects. In certain embodiments, a thin stainless steel foil is polished using a proposed method leading to a substantial, e.g., twice or more, increase in its surface gloss. In certain embodiments, a method in accordance with the present invention involves contacting a substrate surface with a fixed-abrasive filament roller brush. The brush may be a close-wound coil brush. The brush includes filaments carrying 5-20 micrometer abrasive particles that are permanently fixed in the brush filaments, for example a polymer base material, such as nylon. The particles may be made of silicon carbide and/or other abrasive materials. In certain embodiments, a substrate surface is polished using a series of roller brushes, at least two of which rotate in different directions with respect to that surface.
    Type: Application
    Filed: July 23, 2010
    Publication date: November 11, 2010
    Applicant: MIASOLE
    Inventors: Timothy Kueper, Joseph Laia, Jason Corneille, Philip Scott
  • Publication number: 20100276594
    Abstract: A photoconductive device (2) comprises a plurality of photoconductive layers (6, 8, 10, 12), each photoconductive layer comprising photoconductive material (4) and a respective plurality of electrodes (16, 18), wherein the photoconductive layers (6, 8, 10, 12) are electrically connected together.
    Type: Application
    Filed: December 20, 2007
    Publication date: November 4, 2010
    Inventors: Edik Rafailov, Nart Daghestani
  • Publication number: 20100275964
    Abstract: An i-type amorphous silicon layer 14 and a p-type amorphous silicon layer 15 are formed on a part of an inner wall of a through hole of an n-type single-crystal silicon substrate 11. Further, an i-type amorphous silicon layer 12 and an n-type amorphous silicon layer 13 are formed on a part of the inner wall of the through hole of the n-type single-crystal silicon substrate 11. The inner wall surface of the through hole is covered with the i-type amorphous silicon layer 14 and the i-type amorphous silicon layer 12.
    Type: Application
    Filed: September 25, 2008
    Publication date: November 4, 2010
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventor: Toshihiro KINOSHITA
  • Publication number: 20100269904
    Abstract: A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.
    Type: Application
    Filed: May 25, 2010
    Publication date: October 28, 2010
    Inventor: Peter John Cousins
  • Publication number: 20100267193
    Abstract: A method of manufacturing a solar cell includes forming a transparent conductive layer on a substrate by depositing a transparent conductive oxide under room temperature, crystallizing the transparent conductive layer by irradiating a laser beam to the transparent conductive layer using a first laser; selectively etching the crystallized transparent conductive layer to form embossed and depressed patterns at a surface of the transparent conductive layer; forming transparent electrodes in unit cells by patterning the transparent conductive layer having the embossed and depressed patterns; forming a p-n junction semiconductor layer on the transparent electrodes and patterning the p-n junction semiconductor layer; and forming rear electrodes on the patterned p-n junction semiconductor layer by forming a metallic material layer and patterning the metallic material layer, the rear electrodes corresponding to the unit cells.
    Type: Application
    Filed: December 22, 2009
    Publication date: October 21, 2010
    Inventors: Jeong-Woo Lee, Seong-Kee Park, Kyung-Jin Shim, Tae-Youn Kim, Won-Seo Park
  • Publication number: 20100244030
    Abstract: A photoelectric conversion element includes, in the following order: a substrate; a lower electrode; a photoelectric conversion layer; and an upper electrode comprising a transparent electrode material, the photoelectric conversion element further includes a stress relieving layer provided between the upper electrode and the photoelectric conversion layer, and the stress relieving layer includes a crystal layer capable of relieving a stress of the transparent electrode material.
    Type: Application
    Filed: March 30, 2010
    Publication date: September 30, 2010
    Applicant: FUJIFILM CORPORATION
    Inventors: Daigo SAWAKI, Tetsuro MITSUI
  • Publication number: 20100229912
    Abstract: The present invention relates to a photovoltaic device through a lateral crystallization process and a fabrication method thereof, and in particular to a high efficiency solar cell module and a fabrication method thereof. The present invention comprises a first solar cell having an amorphous silicon layer formed on a first substrate, a second solar cell having a microcrystalline silicon semiconductor layer formed on a second substrate, and a junction layer junctioning the first solar cell and the second solar cell, making it possible to obtain a solar cell with high efficiency, low fabricating costs, high product characteristic, and high reliability.
    Type: Application
    Filed: January 22, 2008
    Publication date: September 16, 2010
    Applicant: LG ELECTRONICS INC.
    Inventors: Young-Joo Eo, Seh-Woh Ahn, Kwy-Ro Lee, Don-Hee Lee, Heon-Min Lee
  • Publication number: 20100224877
    Abstract: Disclosed is an electrophotographic photoreceptor which comprises a base material and a photoconductive layer. The photoconductive layer is formed on the base material, and comprises a non-single-crystal material mainly composed of silicon. In the photoconductive layer, with regard to a characteristic energy E (eV) which has the relationship with a light absorption coefficient ? (cm?1) represented by the following formula (1), the characteristic energy E1 (eV) for an exposure wavelength in larger than the characteristic energy E2 (eV) for a neutralization wavelength.
    Type: Application
    Filed: July 31, 2008
    Publication date: September 9, 2010
    Applicant: KYOCERA CORPORATION
    Inventor: Yoshinobu Ishii
  • Patent number: 7791072
    Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: September 7, 2010
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Hideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 7777291
    Abstract: The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
    Type: Grant
    Filed: August 28, 2006
    Date of Patent: August 17, 2010
    Assignee: Smoltek AB
    Inventor: Mohammad Shafiqul Kabir
  • Publication number: 20100171119
    Abstract: To provide a stacked photoelectric conversion device capable of inhibiting extreme decrease of the output in the morning and evening. A stacked photoelectric conversion device of the present invention comprises a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer stacked in this order from a light entrance side, each photoelectric conversion layer having a p-i-n junction and formed of a silicon based semiconductor, wherein a short-circuit photocurrent of the first photoelectric conversion layer is larger than a short-circuit photocurrent of the second photoelectric conversion layer or a short-circuit photocurrent of the third photoelectric conversion layer under a condition of light source: xenon lamp, irradiance: 100 mW/cm2, AM: 1.5, and temperature: 25° C.
    Type: Application
    Filed: May 29, 2008
    Publication date: July 8, 2010
    Inventors: Yoshiyuki Nasuno, Yasuaki Ishikawa
  • Patent number: 7741690
    Abstract: A photoelectric conversion device includes an intrinsic semiconductor layer, a first conductive type semiconductor layer disposed on a first side of the intrinsic semiconductor layer, and a second conductive type semiconductor layer disposed on a second side of the intrinsic semiconductor layer opposite the first side. The intrinsic semiconductor layer includes an amorphous semiconductor layer and a crystalline semiconductor layer including a plurality of crystals. A diameter of a crystal of the plurality of crystals is equal to or less than approximately 100 angstroms.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: June 22, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-Ho Choo, Dong-Cheol Kim
  • Publication number: 20100140619
    Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
    Type: Application
    Filed: January 12, 2010
    Publication date: June 10, 2010
    Applicants: IMEC, FernUniversitat Hagen
    Inventors: Renat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner
  • Publication number: 20100132791
    Abstract: A method of fabricating a solar cell includes: sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate; forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer; heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer; and sequentially forming a second impurity-doped semiconductor layer and a second electrode on the second intrinsic semiconductor layer.
    Type: Application
    Filed: May 29, 2008
    Publication date: June 3, 2010
    Applicant: JUSUNG ENGINEERING CO., LTD.
    Inventor: Jae-Ho Kim
  • Publication number: 20100136736
    Abstract: A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range betwe
    Type: Application
    Filed: December 1, 2009
    Publication date: June 3, 2010
    Applicant: JUSUNG ENGINEERING CO., LTD.
    Inventors: Chang Ho LEE, Hyung Dong KANG, Hyun Ho LEE, Yong Hyun LEE, Seon Myung KIM
  • Publication number: 20100132778
    Abstract: A method of fabricating a solar cell includes forming a first electrode on a transparent substrate; forming a first impurity-doped semiconductor layer on the first electrode; forming a light absorption layer on the first impurity-doped semiconductor layer and including a plurality of sub-layers, the plurality of sub-layers having stepwisely varying energy band gaps; forming a second impurity-doped semiconductor layer on the light absorption layer; and forming a second electrode on the second impurity-doped semiconductor layer.
    Type: Application
    Filed: June 20, 2008
    Publication date: June 3, 2010
    Applicant: JUSUNG ENGINEERING CO., LTD.
    Inventors: Jin Hong, Chang-Sil Yang
  • Publication number: 20100133536
    Abstract: Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.
    Type: Application
    Filed: August 3, 2006
    Publication date: June 3, 2010
    Inventors: Althanasios J. Syllaios, Thomas R. Schimert, Michael F. Taylor
  • Publication number: 20100089449
    Abstract: The present invention relates to a high efficiency solar cell and a manufacturing method thereof. The high efficiency solar cell of the present invention comprises a lower solar cell layer comprising a single crystalline silicon-based pn thin film; an upper solar cell layer stacked on the upper portion of the lower solar cell layer and comprising an amorphous silicon-based pin thin film; and a glass substrate formed on the upper portion of the upper solar cell layer to receive sunlight. According to the present invention, it has an effect that a low-cost high efficiency solar cell can be manufactured.
    Type: Application
    Filed: July 3, 2007
    Publication date: April 15, 2010
    Applicant: LG ELECTRONICS INC.
    Inventors: Seh-Won Ahn, Kun-Ho Ahn, Kwy-Ro Lee, Don-Hee Lee, Heon-Min Lee
  • Publication number: 20100078637
    Abstract: A photoelectric conversion element includes a light receiving layer that is formed of microcrystal semiconductor, a first semiconductor layer of a first conductive type that is formed on one face side of the light receiving layer, and a first intermediate layer that is interposed between the first semiconductor layer and the light receiving layer and is formed of amorphous semiconductor.
    Type: Application
    Filed: July 24, 2009
    Publication date: April 1, 2010
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Tomotaka MATSUMOTO, Tsukasa EGUCHI
  • Publication number: 20100078638
    Abstract: An image sensor and a method of fabricating an image sensor. An image sensor may include a readout circuitry arranged over a semiconductor substrate, an interlayer dielectric film provided with metal lines arranged over a semiconductor substrate, and/or a lower electrode arranged over a interlayer dielectric film such that a lower electrode may be connected to metal lines. An image sensor may include a first-type conductive layer pattern arranged over a lower electrode, an intrinsic layer arranged over a surface of a semiconductor substrate such that an intrinsic layer may substantially cover a first-type conductive layer pattern. An image sensor may include a second-type conductive layer arranged over an intrinsic layer. A method of fabricating an image sensor may include a patterned n-type amorphous silicon layer which may be treated with N2O plasma. A method of fabricating an image sensor may include H2 annealing.
    Type: Application
    Filed: September 29, 2009
    Publication date: April 1, 2010
    Inventors: Han-Choon Lee, Oh-Jin Jung
  • Publication number: 20100059110
    Abstract: A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap, high conductivity, and resistance to attack by oxygen.
    Type: Application
    Filed: September 11, 2008
    Publication date: March 11, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Shuran Sheng, Yong-Kee Chae
  • Publication number: 20100044711
    Abstract: A thin film transistor including: source and drain electrodes, an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer, a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer, a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, and a second insulating film that separates the bias electrode from the source and drain electrodes and the active layer.
    Type: Application
    Filed: August 11, 2009
    Publication date: February 25, 2010
    Applicant: FUJIFILM CORPORATION
    Inventor: Shinji IMAI
  • Publication number: 20100032014
    Abstract: A photovoltaic device which includes: a) a substrate based on a crystalline semi-conductor material; b) a first electrode which includes at least one heterojunction made on one face, referred to as the rear face, of the substrate, where this heterojunction includes a layer based on a doped amorphous semi-conductor material; and c) a second electrode. The first and second electrodes are arranged on the rear face of the substrate according to an interdigitated combs design, and where the layer includes multiple portions of the doped amorphous semi-conductor material which are unconnected and spaced apart from each other.
    Type: Application
    Filed: March 26, 2008
    Publication date: February 11, 2010
    Applicant: Commissariat A L'Energie Atomique
    Inventors: Armand Bettinelli, Thibaut Desrues
  • Publication number: 20100025687
    Abstract: An image sensor and a method for manufacturing the same are provided. The image sensor comprises a readout circuitry, a first interlayer dielectric with an interconnection therein, a second interlayer dielectric, an image sensing device, and a contact plug. The readout circuitry is formed in a first substrate. The first interlayer dielectric is formed over the first substrate. The interconnection is electrically connected to the readout circuitry. The second interlayer dielectric is formed over the first interlayer dielectric. The image sensing device comprises a first laser annealed trench and is disposed over the second interlayer dielectric. The contact plug penetrates the first laser annealed trench and the second interlayer dielectric and electrically connects the image sensing device and the interconnection.
    Type: Application
    Filed: July 29, 2009
    Publication date: February 4, 2010
    Inventor: CHANG HUN HAN
  • Patent number: 7649201
    Abstract: An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.
    Type: Grant
    Filed: April 7, 2006
    Date of Patent: January 19, 2010
    Assignee: Micron Technology, Inc.
    Inventor: Chandra Mouli
  • Publication number: 20090314346
    Abstract: A p type amorphous silicon layer is stacked, by a CVD method, on a main surface of an n type single-crystalline silicon substrate; an n type amorphous silicon layer is stacked, by the CVD method, on a surface opposite to the surface on which the p type amorphous silicon layer is stacked; and, by using a laser ablation processing method, through-holes are formed in the n type single-crystalline silicon substrate, the p type amorphous silicon layer, and the n type amorphous silicon layer. Subsequently, an insulating layer is formed on an inner wall surface of each of the through-holes, and then a conductive material is filled therein.
    Type: Application
    Filed: May 15, 2008
    Publication date: December 24, 2009
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventor: Yuji HISHIDA
  • Publication number: 20090315030
    Abstract: Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.
    Type: Application
    Filed: June 17, 2009
    Publication date: December 24, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Soo Young Choi, Jriyan Jerry Chen, Tae Kyung Won, Dong-Kil Yim
  • Publication number: 20090302229
    Abstract: An imaging apparatus includes a plurality of pixels disposed on an insulation substrate. Each of the pixels includes a plurality of thin-film transistors, a conversion element disposed above the TFTs, and a plurality of insulating layers disposed between the conversion element and the plurality of TFTs. The plurality of TFTs includes a reading TFT having a gate electrode electrically connected to the conversion element and a first selecting TFT electrically connected to a source electrode or a drain electrode of the reading TFT. At least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.
    Type: Application
    Filed: August 19, 2009
    Publication date: December 10, 2009
    Applicant: CANON KABSUHIKI KAISHA
    Inventors: Minoru Watanabe, Chiori Mochizuki, Takamasa Ishii