Abstract: An ultraviolet ray detecting device is provided. The ultraviolet ray detecting device comprises: a substrate; a buffer layer disposed on the substrate; a light absorption layer disposed on the buffer layer; a capping layer disposed on the light absorption layer; and a Schottky layer disposed on a partial region of the capping layer, wherein the capping layer has an energy bandgap larger than that of the light absorption layer.

Abstract: An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having a second base and second fingers extending outwardly from the second base and being interdigitated with the first fingers to define semiconductor junction areas, with the first and second fingers having a non-uniform width. The electro-optic device may include a circuit coupled to the optical grating coupler and configured to bias the semiconductor junction areas and change one or more optical characteristics of the optical grating coupler.

Abstract: An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

Abstract: Photovoltaic devices are driven by intense photoemission of “hot” electrons from a suitable nanostructured metal. The metal should be an electron source with surface plasmon resonance within the visible and near-visible spectrum range (near IR to near UV (about 300 to 1000 nm)). Suitable metals include silver, gold, copper and alloys of silver, gold and copper with each other. Silver is particularly preferred for its advantageous opto-electronic properties in the near UV and visible spectrum range, relatively low cost, and simplicity of processing.

Abstract: Various embodiments relate to a functional low cost photovoltaic (PV) cell (e.g., solar cell) and a method for the large scale production of the device. The manufacturing method to produce a pseudo-Schottky photovoltaic (PSPV) cell, includes depositing a metal contact on a reverse side of the wafer; superposing a mask on an obverse side of the wafer; disposing a conductive paint to the obverse side of the wafer; removing the mask on the obverse side of the wafer; and attaching electrical conduction leads between the paint and the metal contact.

Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

Abstract: A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.

Abstract: A photovoltaic UV detector configured to generate an electrical output under UV irradiation. The photovoltaic UV detector comprises a first layer comprising an electrically polarized dielectric thin layer configured to generate a first electrical output under the UV irradiation; and a second, layer configured to form an electrical energy barrier at an interface between the second layer and the first layer so as to generate a second electrical output under the UV irradiation, the second electrical output having a same polarity as the first electrical output, the electrical output of the photovoltaic UV detector being a sum of at least the first electrical output and the second electrical output. The electrically polarized dielectric thin layer may be a ferroelectric thin film, which may comprise PZT or PZLT. The second layer may be a metal and the electrical energy barrier may be a Schottky barrier.

Abstract: Provided is a light-receiving device which has light-receiving sensitivity superior to that of a conventional Schottky diode type light-receiving device and also has sufficiently-strengthened junction of a Schottky electrode. A first contact layer formed of AlGaN and having conductivity, a light-receiving layer formed of AlGaN, and a second contact layer formed of AlN and having a thickness of 5 nm are epitaxially formed on a predetermined substrate in the stated order, and a second electrode is brought into Schottky junction with the second contact layer, to thereby form MIS junction. Further, after the Schottky junction, heat treatment is performed under a nitrogen gas atmosphere at 600° C. for 30 seconds.

Abstract: A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a transparent Schottky metal layer.

Abstract: A Schottky Barrier solar cell having at least one of a low work function region and a high work function region provided on the front or back surface of a lightly-doped absorber material, which may be produced in a variety of different geometries. The method of producing the Schottky Barrier solar cells allows for short processing times and the use of low temperatures.

Abstract: An ultraviolet radiation dosimeter apparatus for measuring an individual's ultraviolet radiation exposure from incoming ultraviolet rays, including an ultraviolet radiation dosimeter body; an ultraviolet filter in the ultraviolet radiation dosimeter body; a detector semiconductor substrate in the ultraviolet radiation dosimeter body connected to the ultraviolet filter for detecting the incoming ultraviolet rays and producing a signal, the semiconductor substrate made of ZnSe(Te), and a chip in the ultraviolet radiation dosimeter body for receiving the signal and measuring the individual's ultraviolet radiation exposure from the incoming ultraviolet rays.

Abstract: A Schottky device and a semiconductor process of making the same are provided. The Schottky device comprises a substrate, a deep well, a Schottky contact, and an Ohmic contact. The substrate is doped with a first type of ions. The deep well is doped with a second type of ions, and formed in the substrate. The Schottky contact contacts a first electrode with the deep well. The Ohmic contact contacts a second electrode with a heavily doped region with the second type of ions in the deep well. Wherein the deep well has a geometry gap with a width formed under the Schottky contact, the first type of ions and the second type of ions are complementary, and the width of the gap adjusts the breakdown voltage.

Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

Abstract: A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the Schottky photodiode, a doped epitaxial layer over the front surface of the monocrystalline semiconductor substrate having a second dopant concentration less than the first dopant concentration, and parallel spaced apart trenches in the doped epitaxial layer and having of a depth less than a depth of the doped epitaxial layer.

Abstract: This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor substrate extending substantially to the anode electrode disposed on the bottom surface of the semiconductor and the sinker dopant region covered by a buried Schottky barrier metal functioning as a Schottky anode.

Abstract: A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.

Abstract: A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device.

Abstract: Provided is a rectifier such as a detector in which a cutoff frequency may be increased in a view point different from the reduction in size of the structure. The rectifier includes: a Schottky barrier portion including a Schottky electrode; a barrier portion having a rectifying property with respect to a majority carrier in the Schottky barrier portion; and an ohmic electrode in electrical contact with the barrier portion having the rectifying property, in which each of the Schottky barrier portion and the barrier portion having the rectifying property has an asymmetrical band profile whose gradient on one side is larger than a gradient of another side, and the Schottky barrier portion and the barrier portion having the rectifying property are connected to each other so that the steep gradient side of the band profile is located on a side of the Schottky electrode.

Abstract: A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the Schottky photodiode, a doped epitaxial layer over the front surface of the monocrystalline semiconductor substrate having a second dopant concentration less than the first dopant concentration, and parallel spaced apart trenches in the doped epitaxial layer and having of a depth less than a depth of the doped epitaxial layer.

Abstract: A light-tight silicon detector. The detector utilizes a silicon substrate having a sensitive volume for the detection of ionizing radiation and a rectifying contact or electrode through which the ionizing radiation may enter. A diffused or boron-implanted p+ layer may act at the rectifying electrode. A first layer of titanium nitride is deposited on the entrance window to prevent light from being admitted to the sensitive volume and to increase the abrasion and corrosion resistance of the detector. Alternatively a titanium nitride layer may be deposited directly on the silicon substrate, said layer acting as a surface barrier or Schottky barrier rectifying contact. A layer of titanium nitride may be deposited on the backside contact wherein this titanium nitride layer serves as an ohmic contact. The second layer may be further utilized as a conductive contact for surface mount connections.

Abstract: Impurity concentration of a second semiconductor region is set such that when a predetermined reverse bias is applied to a heterojunction diode configured by a first semiconductor region and the second semiconductor region, a breakdown voltage at least in a heterojunction region other than outer peripheral ends of the heterojunction diode is a breakdown voltage of a semiconductor device.

Abstract: A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate.

Abstract: Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.

Abstract: Photovoltaic devices are driven by intense photoemission of “hot” electrons from a suitable nanostructured metal. The metal should be an electron source with surface plasmon resonance within the visible and near-visible spectrum range (near IR to near UV (about 300 to 1000 nm)). Suitable metals include silver, gold, copper and alloys of silver, gold and copper with each other. Silver is particularly preferred for its advantageous opto-electronic properties in the near UV and visible spectrum range, relatively low cost, and simplicity of processing.

Abstract: A first solar battery unit and a second solar battery unit are stacked between a front-side electrode and a backside electrode and sandwiching an intermediate layer having conductivity, and a Schottky barrier is formed between the intermediate layer and an electrode connecting layer which connects the front-side electrode and the backside electrode.

Abstract: Provided is a light-receiving device which has light-receiving sensitivity superior to that of a conventional Schottky diode type light-receiving device and also has sufficiently-strengthened junction of a Schottky electrode. A first contact layer formed of AlGaN and having conductivity, a light-receiving layer formed of AlGaN, and a second contact layer formed of AlN and having a thickness of 5 nm are epitaxially formed on a predetermined substrate in the stated order, and a second electrode is brought into Schottky junction with the second contact layer, to thereby form MIS junction. Further, after the Schottky junction, heat treatment is performed under a nitrogen gas atmosphere at 600° C. for 30 seconds.

Abstract: A photovoltaic device and a method of making the photovoltaic device. The device includes a metallic surface defining a plurality of voids for confining surface plasmons. The metallic surface is coated with a semiconductor to form a Schottky region at an interface between the metallic surface and the semiconductor within each void.

Abstract: This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor substrate extending substantially to the anode electrode disposed on the bottom surface of the semiconductor and the sinker dopant region covered by a buried Schottky barrier metal functioning as an Schottky anode.

Abstract: This invention relates to an MSM type photo-detection device designed to detect incident light and comprising reflecting means (2) superposed on a support (1), to form a first mirror for a Fabry-Pérot type resonant cavity, a layer of material (3) that does not absorb light, an active layer (4) made of a semiconducting material absorbing incident light and a network (5) of polarization electrodes collecting the detected signal. The electrodes network is arranged on the active layer and is composed of parallel conducting strips at a uniform spacing at a period less than the wavelength of incident light, the electrodes network forming a second mirror for the resonant cavity, the optical characteristics of this second mirror being determined by the geometric dimensions of the said conducting strips. The distance separating the first mirror from the second mirror is determined to obtain a Fabry-Pérot type resonance for incident light between these two mirrors.

Abstract: The invention relates to a lateral semiconductor diode, in which contact metal fillings (6, 7), which run in trenches (3, 4) in particular in a silicon carbide body (1, 2), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction (18) is provided.

Abstract: A monolithic three dimensional memory array comprising Schottky diodes components separated by antifuses is disclosed. The Schottky diodes are vertically oriented and disposed on alternating levels. Those on odd levels are “rightside-up” with antifuse over the metal, and those on even levels are “upside down” with metal over the antifuse. Both antifuses are preferably grown oxides.

Abstract: An UV detector, comprising: a sapphire substrate; a high temperature AlN buffer layer grown on the sapphire substrate; an intermediate temperature GaN buffer layer grown on the high temperature AlN buffer layer; a GaN epitaxial layer deposited on the intermediate temperature GaN buffer layer; a Schottky junction formed on top of the GaN epitaxial layer; and a plurality of ohmic contacts also formed on top of the GaN epitaxial layer, wherein, the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer together form a double buffer layer structure so as to improve the reliability and radiation hardness of the UV detector; and wherein the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer are formed by RF-plasma enhanced MBE growth technology.

Abstract: This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.

Abstract: The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a second material region having a bandgap energy Eg2 which is less than Eg1. This facilitates signal photocurrent generated in the second region to flow efficiently through the junction in the first region while minimizing the process-related dark currents and associated noise due to near junction defects and imperfect surfaces which typically reduce photodiode device performance. The heterojunction photodiode can be included in an imaging system which includes an array of junctions to form an imager.

Abstract: Disclosed are detector devices and related methods. In an Al EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800° C. Pulsed NH3 is used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.

Abstract: The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a second material region having a bandgap energy Eg2 which is less than Eg1. This facilitates signal photocurrent generated in the second region to flow efficiently through the junction in the first region while minimizing the process-related dark currents and associated noise due to near junction defects and imperfect surfaces which typically reduce photodiode device performance. The heterojunction photodiode can be included in an imaging system which includes an array of junctions to form an imager.

Abstract: This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a fist conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.