Abstract: A microelectromechanical systems (MEMS) component 20 includes a portion 32 of a MEMS structure 30 formed on a semiconductor substrate 34 and a portion 36 of the structure 30 formed in a non-semiconductor substrate 22. The non-semiconductor substrate 22 is in fixed communication with the semiconductor substrate 34 with the portion 32 of the MEMS structure 30 being interposed between the substrates 34 and 22. A fabrication method 96 entails utilizing semiconductor thin-film processing techniques to form the portion 32 on the semiconductor substrate 34, and utilizing a lower cost processing technique to fabricate the portion 36 in the non-semiconductor substrate 22. The portions 32 and 36 are coupled to yield the MEMS structure 30, and the MEMS structure 30 can be attached to another substrate as needed for additional functionality.

Abstract: A backside illuminated image sensor includes an isolation structure passing through a substrate, a sensor element formed overlying the front surface of the substrate, and a color filter formed overlying the back surface of the substrate.

Abstract: An imager device is disclosed including a first substrate having an array of photosensitive elements formed thereon, a first conductive layer formed above the first substrate, a first conductive member extending through the first substrate, the first conductive member being conductively coupled to the first conductive layer, a standoff structure formed above the first substrate, a second conductive layer formed above the standoff structure, the second conductive layer being conductively coupled to the first conductive layer, and an electrically powered device positioned above the standoff structure, the electrically powered device being electrically coupled to the second conductive layer.

Abstract: A solid-state imaging device includes: a semiconductor substrate; plural photoelectric conversion units formed side by side on the semiconductor substrate to form a light receiving unit; a peripheral circuit formed in a portion on an outside of the light receiving unit on the semiconductor substrate; a wiring section formed on the light receiving unit and formed for connecting the plural photoelectric conversion units and the peripheral circuit; and a dummy wiring section formed on an opposite side of the wiring section for at least one photoelectric conversion unit among the plural photoelectric conversion units on the light receiving unit and formed for functioning as a non-connected wiring section not connected to the photoelectric conversion units and the peripheral circuit, wherein the dummy wiring section has a predetermined potential.

Abstract: A solar cell module 1 is formed by connecting solar cell connected bodies 3 to each other via a conductor bar 15, the solar cell connected bodies each including a plurality of solar cells 11 connected to each other with an intercellular wiring member 21. The conductor bar 15 and the solar cell connected body 3 are connected to each other with a connecting member 26 that is a provided with a step 27 having the same height as the difference in height between a connecting portion of the conductor bar 15 and a connecting portion of the solar cell connected body 3.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a substrate; front electrodes arranged at fixed intervals on the substrate by separating parts for dividing the solar cell into a plurality of unit cells, wherein each separating part is interposed between the front electrodes; semiconductor layer patterns arranged at fixed intervals on the front electrodes by the interposed separating parts; rear electrodes arranged at fixed intervals on the semiconductor layer patterns by the interposed separating parts; and auxiliary electrodes to electrically connect the front electrodes with the rear electrodes, in which the front electrode is electrically connected with the rear electrode through the use of auxiliary electrode, so that it is possible to minimize the laser-scribing procedure for dividing the solar cell into the plurality of unit cells, thereby preventing the particles from being generated.

Abstract: A display device in which not only a variation in a current value due to a threshold voltage but also a variation in a current value due to mobility are prevented from influencing luminance with respect to all the levels of grayscale to be displayed. After applying an initial potential for correction to a gate and a drain of a driving transistor, the gate and the drain of the driving transistor is kept connected in a floating state, and a voltage is held in a capacitor before a voltage between the gate and a source of the driving transistor becomes equal to a threshold voltage. When a voltage obtained by subtracting the voltage held in the capacitor from a voltage of a video signal is applied to the gate and the source of the driving transistor, a current is supplied to a light-emitting element. A value of an initial voltage for correction differs in accordance with the voltage of the video signal.

Abstract: The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.

Abstract: A semiconductor module includes a lower wiring substrate having a semiconductor device mounted and an upper wiring substrate having an opening in a position corresponding to the semiconductor device and having a packaging-component mountable region around the opening. The lower wiring substrate and the upper wiring substrate are electrically connected to each other via a plurality of solder balls provided around the semiconductor device. The solder balls are covered with light blocking under-fills.

Abstract: Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.

Abstract: (Problems) To provide an integrated circuit having the wiring structure including pads with a small wiring area and capable of highly integrating elements, a solid image pickup element having the wiring structure, and an imaging device having the solid image pickup element.

Abstract: A semiconductor substrate has a first principal face and a second principal face opposite thereto. A pixel unit, an analog circuit and a digital circuit are formed in a first, second and third region of the semiconductor substrate. An interconnect is formed on each of the first and second principal faces of the second region. A plurality of penetrative electrodes is formed in the semiconductor substrate to penetrate the first and second principal faces. These penetrative electrodes are electrically connected with interconnects formed in the first and second principal faces of the second region. A guard ring is formed in the semiconductor substrate to penetrate the first and second principal faces, the guard ring is surrounding the penetrative electrodes.

Abstract: An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).

Abstract: This invention comprises manufacture of photovoltaic cells by deposition of thin film photovoltaic junctions on metal foil substrates. The photovoltaic junctions may be heat treated if appropriate following deposition in a continuous fashion without deterioration of the metal support structure. In a separate operation, an interconnection substrate structure is provided, optionally in a continuous fashion. Multiple photovoltaic cells are then laminated to the interconnection substrate structure and conductive joining methods are employed to complete the array. In this way the interconnection substrate structure can be uniquely formulated from polymer-based materials employing optimal processing unique to polymeric materials. Furthermore, the photovoltaic junction and its metal foil support can be produced in bulk without the need to use the expensive and intricate material removal operations currently taught in the art to achieve series interconnections.

Abstract: Provided is a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. In an image sensor including an array of pixels, each pixel includes: a standard photo-sensing and charge storage region formed in a first region under a surface portion of a substrate and collecting photo-generated carriers; a second charge storage region formed adjacent to the surface portion of the substrate and separated from the standard photo-sensing and charge storage region; and a potential barrier formed between the first region and a second region underneath the first region and diverting the photo-generated carriers from the second region to the second charge storage region.

Abstract: Multiple semiconductor elements in a semiconductor module in which multiple spherical light receiving or emitting semiconductor elements are installed can easily be retrieved, reused, or repaired. In a semiconductor module 60, two segment modules 61 are serially arranged in a storage casing 62. The segment modules 61 are each formed by molding solar battery cells 10 arranged in a matrix of multiple rows and columns, and a conductive connection mechanism serially-connecting the solar battery cells 10 in each column and parallel-connecting the solar battery cells 10 in each row in a synthetic resin with connection conductors 67 protruding at the ends. Conductive corrugated springs 70 and external terminals 76 are provided at the ends of the storage casing 62. The mechanical pressing force of the conductive corrugated springs 70 ensures that the two segment modules 61 are serially connected.

Abstract: An imaging optical module is designed to be placed in front of an optical image sensor of a semiconductor component. The module includes at least one element which has a refractive index that varies between its optical axis and its periphery, over at least an annular part and/or over its central part. The element may be a tablet in front of the semiconductor sensor or a lens in front of the semiconductor sensor. The direction of variation in refractive index may be oppositely oriented with respect to the table and lens.

Abstract: There is provide a divided exposure technology capable of restraining deterioration in the performance of a solid-state image sensor. A photoresist is formed over a semiconductor substrate and subjected to divided exposure. A dividing line for divided exposure is located at least over a region of a semiconductor substrate in which an active region in which a pixel is to be formed is defined. The photoresist is then developed and patterned. By utilizing the patterned photoresist, an element isolation structure for defining the active region in the semiconductor substrate is formed in the semiconductor substrate.

Abstract: The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.

Abstract: The present invention generally relates to low-concentration photovoltaic modules. The photovoltaic modules may comprise a flexible backsheet having a plurality of electrically conductive circuit elements that have been embossed or imprinted to create optical features in the electrically conductive surface. The solar cells are then in electrical contact with the electrically conductive circuit elements to complete the photovoltaic module. By imprinting/embossing the electrically conductive circuit elements, incident solar radiation that would normally not reach the solar cells may be reflected and collected by the solar cells. Thus, substantially all of the solar radiation that is exposed to the photovoltaic module is collected by the solar cells of the photovoltaic module.

Abstract: An aspect of the invention provides a method for measuring I-V characteristics of a solar cell, the solar cell comprising a plurality of fine line-shaped electrodes formed on a first surface in a predetermined direction; and a coupling line formed on the first surface that electrically couples at least two fine line-shaped electrodes among the plurality of fine line-shaped electrodes, the coupling line having a line width larger than a line width of the fine line-shaped electrodes. The method includes: contacting a probe pin for voltage measurement with the coupling line; contacting two or more probe pins for current measurement electrically connected to each other with two or more fine line-shaped electrodes including the fine line-shaped electrodes coupled to each other by the coupling line among the plurality of fine line-shaped electrodes; and measuring I-V characteristics while irradiating the first surface with light.

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

Abstract: Exemplary embodiments provide a solar cell device, and method for forming the solar cell device by integrating a switch component into a solar cell element. The solar cell element can include a solar cell, a solar cell array and/or a solar cell panel The integrated solar cell element can be used for a solar sensor, while the solar sensor can also use discrete switches for each solar cell area of the sensor. Exemplary embodiments also provide a connection system for the solar cell elements and a method for super-connecting the solar cell elements to provide a desired connection path or a desired power output through switch settings. The disclosed connection systems and methods can allow for by-passing underperforming solar cell elements from a plurality of solar cell elements. In embodiments, the solar cell element can be extended to include a battery or a capacitor.

Abstract: An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality of TDI sensor modules. The plurality of TDI sensor modules can be positioned capture a same inspection region or different inspection regions. The plurality of TDI sensor modules can be identical or provide for different integration stages. Spacing of the modules can be arranged to provide 100% coverage of the inspection region in one pass or for fractional coverage requiring two or more passes for complete coverage.

Abstract: A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12. Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.

Abstract: A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained.

Abstract: An optical device according to an aspect of the present invention includes: a semiconductor substrate layer including a plurality of elements; at least one optical component which is formed at the first principal surface side of the semiconductor substrate layer and transmits incident light of desired wavelength; and an interconnect layer formed on second principal surface of the semiconductor substrate layer. In the semiconductor substrate layer, (i) a photoelectric conversion element region is formed at a position corresponding to the at least one optical component, and (ii) at least one element among the plurality of elements is formed near the second principal surface. At least a part of the at least one optical component is formed as a part of the semiconductor substrate layer, and the interconnect layer includes the conductive material electrically connected to the photoelectric conversion element region and the at least one element.

Abstract: The solar cell has at least one semiconductor layer arranged on a metal support and is provided with a plurality of contact tracks arranged on the semiconductor layer. A lateral projection by at least one contact track is bent around onto a reverse of the support and arranged so as to be electrically insulated from the support. Adjacently arranged solar cells are preferably inter-connected by conductor tracks which have a perforated form in order to allow local contact-connections by soldering through.

Abstract: A reflowable camera module has a set of solder joints formed on a bottom surface of the camera module that provide electrical signal and power connections between the camera module and a printed circuit substrate. The solder joints are susceptible to failure caused by shear forces, particularly in corner regions. Additional localized mechanical supports are provided to protect those solder joints carrying power and electrical signals for the camera module. The localized mechanical supports are formed outside of a region containing the solder joints carrying power and electrical signals. The localized mechanical supports may include dummy solder joints formed in corner regions and/or dummy leads used to support the camera module. Solder joint reliability is enhanced without requiring the use of an underfill encapsulant.

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a photodiode, a floating diffusion region, a reset transistor, and a drive transistor. The photodiode generates photocharges. The floating diffusion region accumulates the photocharges. The reset transistor has a source connected to the floating diffusion region, and has a gate and a drain connected to each other to perform a reset function. The drive transistor receives the photocharges and serves as a source follower buffer amplifier.

Abstract: An image sensor may include a readout circuit formed over a first substrate made of InSb, the first substrate including a pixel part and a periphery part. A wiring and interlayer dielectric layer may be formed over the first substrate including the readout circuit. A photodiode may be formed over the interlayer dielectric layer and over the pixel part of the first substrate, and an upper electrode layer may be connected with the photodiode.

Abstract: A semiconductor device includes: a semiconductor substrate 1; a through electrode 7 extending through the semiconductor substrate 1; a diffusion layer 24 formed in a region of an upper portion of the semiconductor substrate 1 located on a side of the through electrode 7; and a diffusion layer 22 formed in an upper portion of the diffusion layer 24. A portion of the side surface of the through electrode 7 facing the diffusion layer 24 is curved, and a portion of the surface of the diffusion layer 24 facing the through electrode 7 is curved.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate formed on a first surface thereof with a readout circuitry and a photodiode area; a metal interconnection layer formed on the first surface; a connection via metal extending from the first surface to a second surface of the semiconductor substrate, the connection via metal having a projection part projecting from the second surface; an insulating layer formed on the first surface of the semiconductor substrate to expose the projection part while surrounding a portion of a lateral side of the projection part; and a metal pad formed on the insulating layer such that the metal pad covers the projection part, thereby shortening an optical path to reduce light loss and improve image sensitivity.

Abstract: An image sensor and a method for manufacturing an image sensor. An image sensor may include a readout circuitry which may be formed on and/or over a first substrate. An image sensor may include an interlayer dielectric layer formed on and/or over a first substrate. An image sensor may include a metal line formed on and/or over an interlayer dielectric layer, and may include a top plug. An image sensor may include an image sensing device formed on and/or over a top plug. An image sensor may include a first conductive type ion implantation area formed on and/or over an area of an image sensing device corresponding to a top plug. Methods of manufacturing an image sensor are disclosed.

Abstract: An image sensor and a method of manufacturing an image sensor. An image sensor may include a readout circuitry having a metal line on and/or over a first substrate. An image sensor may include an image sensing part having a first conductive-type conductive layer and/or a second conductive-type conductive layer over a metal line. An image sensor may include a pixel division area formed on and/or over an image sensing part corresponding to a pixel boundary. An image sensor may include a ground contact on and/or over a pixel division area. An image sensor may include a contact plug connected with a sidewall of an image sensing part. A method of manufacturing an image sensor is disclosed.

Abstract: The present invention is directed toward a detector structure, detector arrays, a method of detecting incident radiation, and a method of manufacturing the detectors. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of cross-talk, and increased flexibility in application. In one embodiment, the present invention comprises a plurality of front side illuminated photodiodes, optionally organized in the form of an array, with both the anode and cathode contact pads on the back side. The front side illuminated, back side contact photodiodes have superior performance characteristics, including less radiation damage, less crosstalk using a suction diode, and reliance on reasonably thin wafers. Another advantage of the photodiodes of the present invention is that high density with high bandwidth applications can be effectuated.

Abstract: A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.

Abstract: Electronic device packages comprise transparent substrates covering an active surface of an optically interactive electronic device. In some embodiments, the optically interactive electronic device is bonded to conductive traces formed directly on the transparent substrate. In other embodiments, a secondary substrate comprising a plurality of conductive traces is disposed between the transparent substrate and the optically interactive electronic device.

Abstract: A device 20 includes substrates 22 and 24 coupled to form a volume 32 between the substrates. A surface 28 of the substrate 22 faces a surface 30 of the substrate 24. A metal-insulator-metal capacitor 34 is formed on one of the surfaces 28 and 30. A conductive element 58 spans between a top electrode 56 of the capacitor 34 and the other surface 28 and 30. Vias 64 and 66 extend through the substrate 22 and are electrically interconnected with the conductive element 58 and a bottom electrode 52 of the capacitor 34. Another device 72 includes an underpass transmission line 92 formed on a surface 80 of a substrate 74 within a volume 84 formed between the substrate 74 and another substrate 76. The line 92 underlies an integrated device 96 formed on a surface 78 of the substrate 74.

Abstract: An image sensor includes readout circuitry on a first substrate, a metal line electrically connected with the readout circuitry, a dielectric on the metal line, an image sensing device on the dielectric, including first and second conductivity type layers, a contact plug in a via hole penetrating the image sensing device to connect the first conductivity type layer with the metal line, and a sidewall dielectric in the via hole at a sidewall of the second conductivity type layer.

Abstract: Techniques and apparatus for using single photon avalanche diode (SPAD) devices in various applications.

Abstract: A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

Abstract: In accordance with the invention, a photonic device comprises a semiconductor substrate including at least one circuit component comprising a metal silicide layer and an overlying layer including at least one photoresponsive component. The metal silicide layer is disposed between the circuit component and the photoresponsive component to prevent entry into the circuit component of light that penetrates the photoresponsive component. The silicide layer advantageously reflects the light back into the photoresponsive element. In addition, the overlying layer can include one or more reflective layers to reduce entry of oblique light into the photoresponsive component. In an advantageous embodiment, the substrate comprises single-crystal silicon including one or more insulated gate field effect transistors (IGFETs), and/or capacitors, and the photoresponsive element comprises germanium and/or germanium alloy epitaxially grown from seeds on the silicon.

Abstract: An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.

Abstract: A solar cell manufacturing method which forms a Group IBIIAVIA absorber layer over a front side of a metallic substrate. The back side of the metallic substrate is coated with a conductive protection layer, such as a metal nitride material, that that does not form a high resistivity selenide or sulfide films when exposed to Se and S species at temperatures in the range of 400-600 C. Additionally, the protection material layer is stable in highly acidic and basic electroplating solutions that are employed to deposit layers or precursor layers comprising Cu and at least one of In, Ga, Se and S.

Abstract: An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.

Abstract: A semiconductor device including a semiconductor element and a functional member fixed thereto with an adhesive film is provided, where the performance or reliability degradation due to moisture entered by way of the adhesive film itself or the interfaces between the adhesive film and members adjacent thereto can be suppressed with a simple structure. The semiconductor element has an active region for realizing a predetermined function, formed on a surface of the element. The functional member has a predetermined function and is fixed on a surface side of the semiconductor element with the adhesive film. A metal film covers a region including at least all outer side faces of the semiconductor element, all outer side faces of the adhesive film, an interface between the adhesive film and the semiconductor element, and an interface between the adhesive film and the functional member.

Abstract: An image sensor according to embodiments may include a first substrate having photodiode cells, a second substrate having a logic circuit, and connection electrodes that may electrically connect the photodiode cells with the logic circuit. In embodiments, more area may be available on the first substrate for photodiode cells and light loss may be reduced.

Abstract: A microelectromechanical systems (MEMS) component 20 includes a portion 32 of a MEMS structure 30 formed on a semiconductor substrate 34 and a portion 36 of the structure 30 formed in a non-semiconductor substrate 22. The non-semiconductor substrate 22 is in fixed communication with the semiconductor substrate 34 with the portion 32 of the MEMS structure 30 being interposed between the substrates 34 and 22. A fabrication method 96 entails utilizing semiconductor thin-film processing techniques to form the portion 32 on the semiconductor substrate 34, and utilizing a lower cost processing technique to fabricate the portion 36 in the non-semiconductor substrate 22. The portions 32 and 36 are coupled to yield the MEMS structure 30, and the MEMS structure 30 can be attached to another substrate as needed for additional functionality.

Abstract: The present invention is to provide an electromagnetic wave detecting element that can suppress a decrease in utilization efficiency of electromagnetic waves at sensor portions. An upper electrode of each of plural sensor portions, that are provided in correspondence with intersection portions of plural scan lines and plural signal lines disposed to intersect one another, is electrically connected to any other adjacent upper electrode. At each group of sensor portions whose upper electrodes are electrically connected, a common electrode line and the upper electrode of any sensor portion belonging to that group of sensor portions are connected by a contact pad via a contact hole formed in an insulating film and at a connection place of a number that is less than a number of sensor portions belonging to that group of sensor portions.