Abstract: A method of fabricating a backside illuminated imaging sensor that includes a device layer, a metal stack, and an opening is disclosed. The device layer has an imaging array formed in a front side of the device layer, where the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer and includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The method includes depositing a film on the back side of the device layer and within the opening, then etching the film to form a frame within the opening to structurally reinforce the metal pad.

Abstract: A semiconductor chip includes a silicon substrate, a transistor in or on a bottom side surface of the substrate, a metallization structure under a bottom side surface of the substrate, a dielectric layer under the substrate and between a first and second metal layers of the metallization structure, a passivation layer under the metallization structure and the dielectric layer, where an opening in the passivation layer may be under a contact point of the metallization structure, a polymer layer under the passivation layer, a metal post under the passivation layer and in the polymer layer, where the polymer layer may not cover a bottom surface of the metal post, a metal bump connected with the bottom surface of the metal post, a micro-lense over the top side surface of the substrate, and a glass substrate over the micro-lense and over the top side surface of the substrate.

Abstract: A solid-state image pickup device relating to the present invention has a specific gap in a part of a lattice-shaped light blocking film pattern or wiring pattern having an opening enclosing a light reception region. Peripheral circuits and wiring layers on a pixel may be used as the light blocking film. In such a case, when multiple wiring layers are used as the light blocking film, layouts of a second and subsequent wiring layers is determined according to the layout of the first wiring layer above the light reception region. The specific gap is created in a part of the wiring enclosing the light reception region.

Abstract: A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

Abstract: A method for designing a first optical filter, exhibiting a first filter performance satisfying a first preset criterion, and a second optical filter, exhibiting a second filter performance satisfying a second preset criterion, includes providing initial first and second filter designs for the first and second optical filters, respectively, as first and second ordered stacks of layers, respectively. A pair of layers, including a first layer, characterized by a first thickness, and a second layer, characterized by a second thickness, is selected from the first and second ordered stacks of layers. The first thickness is constrained to a first constrained thickness that is a positive integer multiple of the second thickness to yield a constrained first filter design. A predicted performance of the constrained first filter design is determined and compared with the first preset criterion for one of accepting and rejecting the constrained first filter design.

Abstract: According to one embodiment, a backside illumination solid-state imaging device includes a semiconductor layer, a first light-receiving unit and a second light-receiving unit, a circuit unit, an impurity isolation layer, and a light-shielding film. A first light-receiving unit and a second light-receiving unit are formed adjacent to each other in the semiconductor layer, convert light applied from a lower surface side of the semiconductor layer into a signal, and store electric charges. A circuit unit is formed on an upper surface of the semiconductor layer. An impurity isolation layer is formed to reach to the upper surface from the lower surface in the semiconductor layer and isolates the first light-receiving unit from the second light-receiving unit. A light-shielding film is formed on part of the lower surface side in the impurity isolation layer so as to extend from the lower surface to the upper surface.

Abstract: A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom is smaller than ?90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.

Abstract: An image sensor module includes a transparent substrate having recesses defined in a lower face thereof. A light concentration member includes transparent light concentration parts each of which are disposed in a corresponding one of the recesses. Color filters are disposed over each of the light concentration parts and photo diode units having photo diodes are disposed over each of the color filters. An insulation member covers the photo diode units and input/output terminals disposed over the insulation member are each electrically connected to a corresponding photo diode unit.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: Methods for forming backside illuminated (BSI) image sensors having vertical light shields are provided. Vertical light shields may be configured such that incoming light is blocked from reaching a portion of a pixel array formed on the backside illuminated image sensor. Vertical light shields may include horizontal portions that block direct illumination of dark pixels in the pixel array and vertical portions that block illumination of the dark pixels by reflected light. Vertical light shields may be formed from a dielectric layer, a layer of patterned light shield material formed over the dielectric layer and a passivation layer formed over the patterned light shield material. Vertical light shields may be formed by first etching a vertical trench in a device wafer layer over a portion of the pixel array and filling the vertical trench with light shield material to form the vertical light shield.

Abstract: An image sensor includes a first region of a substrate having photoelectric conversion elements formed therein, and includes a second region of the substrate outside of the first region. The image sensor includes a plurality of lenses, a plurality of embossing structures, and a protective layer. The lenses are formed over the first region. The embossing structures are formed over the second region, and the embossing structures are separated from each-other. The protective layer is formed over the lenses and the embossing structures that prevent crack propagation.

Abstract: A method of fabricating an image sensor and an image sensor thereof are provided. The method comprises: providing a mask; utilizing the mask at a first position to form a first group of micro-lenses having a first height on a first group of color filters of a color filter array on a pixel array; shifting the mask from the first position to a second position, wherein a distance between the first position and the second position is substantially equal to a width of a pixel of the pixel array; and utilizing the mask at the second position to form a second group of micro-lenses having a second height, different from the first height, on a second group of color filters of the color filter array.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

Abstract: An optoelectronic semiconductor chip including a radiation passage area, where a contact metallization is applied to the radiation passage area, and a first reflective layer sequence is applied to that surface of the contact metallization which is remote from the radiation passage area, and an optoelectronic component that includes such a chip.

Abstract: A surface profile sensor includes an interlayer insulating film provided with a planarized upper surface formed above a semiconductor substrate, a detection electrode film formed on the interlayer insulating film, an upper insulating film formed on the detection electrode film and the interlayer insulating film and including the surface on which a silicon nitride film is exposed, and a protection insulating film deposited on the upper insulating film and made of a tetrahedral amorphous carbon (ta-C) film including a window formed on the detection electrode film.

Abstract: A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can be reduced, thereby reducing the manufacturing cost and improving the productivity.

Abstract: A light emitting device (1) includes a LED chip (10) as well as a mounting substrate (20) on which the LED chip (10) is mounted. Further, the light emitting device (1) includes a cover member (60) and a color conversion layer (70). The cover member (60) is formed to have a dome shape and is made of a translucency inorganic material. The color conversion layer (70) is formed to have a dome shape and is made of a translucency material (such as, a silicone resin) including a fluorescent material excited by light emitted from the LED chip (10) and emitting light longer in wavelength than the light emitted from the LED chip (10). The cover member (60) is attached to the mounting substrate (20) such that there is an air layer (80) between the cover member (60) and the mounting substrate (20). The color conversion layer (70) is superposed on a light-incoming surface or a light-outgoing surface of the cover member (60).

Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes a black light filter layer and an opaque layer covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer where the light blocking portion is desired but not over the active section.

Abstract: Provided is an organic EL display manufacturing method which has: a step wherein an organic EL panel having a substrate and organic EL elements arranged in matrix on the substrate is prepared, and each organic EL element is permitted to have a pixel electrode disposed on the substrate, an organic layer disposed on the pixel electrode, a transparent counter electrode disposed on the organic layer, a sealing layer disposed on the transparent counter electrode, and a color filter disposed on the sealing layer; a step of detecting a defective portion on the organic layer in the organic EL element; and a step of breaking the transparent counter electrode in a region on the defective portion of the transparent counter electrode by irradiating the region on the defective portion with a laser beam. The laser beam is radiated by being tilted with respect to the normal line on the display surface of the organic EL panel.

Abstract: Semiconductor structures with damascene metal gates and pixel sensor cell shields, methods of manufacture and design structures are provided. The method includes forming a dielectric layer over a dummy gate structure. The method further includes forming one or more recesses in the dielectric layer. The method further includes removing the dummy gate structure in the dielectric layer to form a trench. The method further includes forming metal in the trench and the one more recesses in the dielectric layer to form a damascene metal gate structure in the trench and one or more metal components in the one or more recesses.

Abstract: There is provided a solid-state imaging device including plural pixel regions, each including a pixel having a photoelectric conversion unit, a color filter, and a microlens that condenses the incident light to the photoelectric conversion unit; a first light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each side portion of each pixel region of the plurality of the pixel regions; and a second light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each corner portion of the pixel region, in which a distance from a surface of the pixel to the first end face is short compared to the first light shielding portion.

Abstract: A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer where the metal stack includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The frame is disposed within the opening to structurally reinforce the metal pad.

Abstract: An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer.

Abstract: A lighting device including an LED chip having a light emitting surface, and being configured to emit a light from the light emitting surface, a mounting substrate being configured to mount the LED chip, a first color conversion member including a first light transmissive material and a first phosphor, the first phosphor being excited by the light which is emitted from the LED chip, thereby giving off a first light having a wavelength which is longer than a wavelength of the light emitted from the LED chip, the first color conversion member being directly disposed on the light emitting surface of the LED chip, a second color conversion member including a second light transmissive material and a second phosphor, the second phosphor being excited by the light which is emitted from the LED chip, thereby giving off a second light having a wavelength which is longer than the wavelength of the light emitted from the LED chip, the second color conversion member being shaped to have a dome-shape, wherein the LED chip

Abstract: An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar transparent layer is formed over the color filters and microlenses are formed on the planar transparent layer over the color filters.

Abstract: A rewritable nonvolatile memory includes a test cell that is dedicated to testing the storage characteristics of other, similar, storage cells formed within the same integrated circuit memory. The test cell may be share the same structure and composition as storage cells and may be positioned proximate storage cells.

Abstract: A package-on-package proximity sensor module including a infrared transmitter package and a infrared receiver package is presented. The proximity sensor module may include a fully-assembled infrared transmitter package and a fully-assembled infrared receiver package disposed on a quad flat pack no-lead (QFN) lead frame molded with an IR cut compound housing. A bottom surface of the QFN lead frame may be etched and covered with the IR cut compound to provide a locking feature between the QFN lead frame and the IR cut compound housing.

Abstract: Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

Abstract: A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a substrate including a silicon layer. Furthermore, the design structure includes a metal layer on a bottom side of the silicon layer and a dielectric layer on a top side of the silicon layer. Additionally, the design structure includes a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer and a plurality of contacts in the dielectric layer in contact with the top-side interconnect. Further, the design structure includes a plurality of through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.

Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

Abstract: A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.

Abstract: A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of photodiodes, an interlayer insulation layer on a front-side of the semiconductor substrate, and a plurality of micro lenses on a back-side of the semiconductor substrate. The unit pixel array of the image sensor further includes a wavelength adjustment film portion between each of the micro lenses and the back-side of the semiconductor substrate such that a plurality of wavelength adjustment film portions correspond with the plurality of micro lenses.

Abstract: An image sensor chip, a camera module, and devices incorporating the image sensor chip and camera module include a light receiving unit on which light is incident, a logic unit provided to surround the light receiving unit, and an electromagnetic wave shielding layer formed on the logic unit and not formed on the light receiving unit.

Abstract: An image sensor having a light receiving region and an optical black region includes a semiconductor substrate, an interconnection disposed on the semiconductor substrate and extending along an interface between the light receiving region and the optical black region, and via plugs disposed between the interconnection and the semiconductor substrate and serving as light shielding members at the interface. The via plugs are arranged in a zigzagging pattern along the interface.

Abstract: A high-efficiency, white organic electroluminescent device has such a structure that its emission layer is obtained by laminating sub-emission layers of red, green, and blue, respectively. The green sub-emission layer contacting a hole transport layer has a delayed fluorescent material, and the red sub-emission layer has a phosphorescent light emitting material.

Abstract: Provided is a method of forming a pattern including the steps of forming a first pattern including a depressed or protruding alignment mark on a substrate; forming a flattening layer on the first pattern; removing a part of the flatting layer above the alignment mark; forming a processed layer on the flattening layer to cover the alignment mark; performing alignment by optically detecting a position of the alignment mark from above the processed layer, using light; and forming a second pattern by patterning the processed layer on the basis of the alignment.

Abstract: A method of forming a uniform color filter array. In one embodiment, a first compensation layer is formed over a non-planar color filter array and is patterned to form material structures. A second compensation layer is blanket deposited over the first layer. A technique, such as etching or polishing, is then performed to remove the first and second compensation layers, creating a substantially planar color filter array surface. In another embodiment, the planar color filter array is formed in a recessed trench.

Abstract: A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

Abstract: Provided is an image sensor and method for manufacturing the same. The image sensor includes a semiconductor substrate including a photodiode for each unit pixel, an interlayer insulating layer including metal lines on the semiconductor substrate, and an optical refractive part in a region of the interlayer insulating layer corresponding to the photodiode for focusing light on the photodiode. The optical refractive part can be formed by implanting impurities into the interlayer insulating layer.

Abstract: An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.

Abstract: A liquid crystal display (LCD) panel is provided. The LCD panel includes an active device array substrate, an opposite substrate, and a liquid crystal layer. The active device array substrate includes a plurality of pixel units, and each of the pixel units has a reflective area and a transmissive area. The opposite substrate is disposed above the active device array substrate and has a plurality of first alignment protrusions corresponding to the reflective area and a plurality of second alignment protrusions corresponding to the transmissive area. The first and the second alignment protrusions are positioned between the opposite substrate and the active device array substrate. Additionally, a height of the first alignment protrusions is greater than a height of the second alignment protrusions. The liquid crystal layer is disposed between the opposite substrate and the active device array substrate. The LCD panel has a high aperture ratio.

Abstract: A semiconductor apparatus has a light-receiving element. The light-receiving element has a photodiode unit having a shield film for removing noise, at least two test pads, and a shield film pseudo pattern which is formed by the same membranous type as the shield film and connected to the two test pads. The photodiode unit and the shield film pseudo pattern are integrated in one semiconductor chip. A resistance value of the shield film pseudo pattern is measured using the test pads connected to the shield film pseudo pattern. CMR of a photocoupler can be evaluated according to the correlation relationship between the measurement result and the sheet resistance of the shield film.

Abstract: A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at least an interlayer insulating layer comprising an upper most insulating layer; at least a conductive wiring layer, comprising an upper most conductive wiring layer formed on the upper most insulating layer; and a first passivation layer formed over the upper-most conductive wiring layer. The upper-most wiring layer is not formed directly above the photodiode. The first passivation layer is made of a permeability-resist material and is not formed directly above the photodiode.

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Abstract: Provided is an image sensor. The image sensor includes a semiconductor substrate, photodiode structures, color filters, and microlenses. The semiconductor substrate includes a first region having pixel regions and a second region around the first region. The pixel regions are arranged in a matrix configuration. Each of the photodiode structures has a photodiode in each of the pixel regions. The color filters are disposed on or over the photodiode structures, the color filters correspond to the pixel regions, respectively, and have different areas corresponding to incident angles of light.

Abstract: A method of fabricating a membrane structure for a diffractive phased array assembly is provided. The method includes the steps of providing a wafer having a body and at least a membrane layer and a backside layer disposed on opposite faces of the body, forming a grating pattern on a surface of the membrane layer, and forming a window through the wafer to expose a back surface of the membrane, thereby allowing light to pass through the membrane.

Abstract: A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle ? with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°???4.5°, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle ? to a direction perpendicular to the principal plane within a range of 0°<??45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle ? with the two plane direction within a range of 0°<?<90°.

Abstract: An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer.

Abstract: A CMOS light detector configured to detect specific wavelengths of light includes a first sensor and a second sensor. The first sensor includes CMOS photocells that are covered by a colored filter layer of a first color that has a first transmittance that allows both light of the specific wavelengths and light of other wavelengths to pass. The second sensor including further CMOS photocells, at least some of which are covered by both a colored filter layer of the first color and a colored filter layer of a second color, stacked one above the other in either order, where the colored filter layer of the second color has a second transmittance that allows light of the other wavelengths to pass. The first sensor produces a first photocurrent, and the second sensor produces a second photocurrent, when light including both the specific and other wavelengths is incident upon the detector.