Abstract: An image sensor comprising a black pixel region and an active pixel region is provided. The active pixel region is adjacent to the black pixel region. The black pixel region comprises a dummy black pixel region and a readout black pixel region. The readout black pixel region is surrounded by the dummy black pixel region. The dummy black pixel region comprises a photo-sensitive element, a first shielding layer, a second shielding layer and a third shielding layer. The first shielding layer, the second shielding layer and the third shielding layer are used for blocking the incident light going into the photo-sensitive element. The first shielding layer, the second shielding layer and the third shielding layer cover the photo-sensitive element, and the second shielding layer is interposed between the first shielding layer and the third shielding layer.

Abstract: A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction mirror arrays on the substrate, each diffraction mirror array of the set of at least three diffraction mirror arrays comprising a single row of mirrors, all mirrors in any particular diffraction mirror array spaced apart a same distance, mirrors in different diffraction mirror arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.

Abstract: The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

Abstract: The invention provides a solid-state imaging device and a method of manufacturing a solid-state imaging device capable of reducing a variation in the shape of an in-layer lens and deeply forming a lens portion. Disclosed is a method of manufacturing a solid-state imaging device including a photoelectric conversion unit and a light shielding film. The method includes: forming the light shielding film; forming a first insulating film and performing a reflow process on the first insulating film; etching the first insulating film such that the first insulating film remains only in a side portion of the light shielding film; forming a second insulating film; and forming another insulating film. A lens portion is formed on another insulating film so as to protrude toward the photoelectric conversion unit, and the lens portion has a shape corresponding to the surface shape of the second insulating film.

Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes a black light filter layer and an opaque layer covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer where the light blocking portion is desired but not over the active section.

Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Abstract: A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Abstract: An image sensor is formed by providing a semiconductor substrate having first, second and third pixel regions and first and second color filters disposed on their respective pixel regions. A photoresist layer is coated over the first and second color filters and the third color pixel region. The photoresist is removed from the first and second color filters, leaving a third color filter of substantially the same height as the first and second color filters. Micro lenses may then be formed on the color filters.

Abstract: A solid state imaging device includes: a light receiving portion and a transfer channel formed in a semiconductor substrate; a transfer electrode formed on the transfer channel; an anti-reflection film formed on the light receiving portion; and a light shielding film which covers the transfer electrode, and is in contact with a side surface of the anti-reflection film. An upper surface of the light shielding film at a contact between the light shielding film and a side surface of the anti-reflection film is located below an upper surface of the light shielding film on the transfer electrode.

Abstract: A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions configured to be formed on the imaging surface of a semiconductor substrate, an element isolation portion in which an impurity diffusion region is formed so as to isolate the plurality of photoelectric conversion portions on the imaging surface, a light shielding portion configured to stop incident light from entering the element isolation portion on the imaging surface, and a plurality of pixel transistors configured to be formed on the imaging surface and to read out and output signal charge, generated in the plurality of photoelectric conversion portions, as data signals, wherein the light shielding portion includes an extending portion extending among the plurality of photoelectric conversion portions and is formed so that the extending portion of the light shielding portion and each of the gate electrodes of the pixel transistor are connected to each other.

Abstract: An imager having layers of light trapping material to reduce optical crosstalk and a method of forming the same.

Abstract: An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.

Abstract: Disclosed herein is a method for making a semiconductor device including the steps of: forming a light-receiving portion for carrying out photoelectric conversion in a semiconductor substrate; forming an insulating film to cover a light-receiving side of the semiconductor substrate; forming a metallic light-shielding film to partly cover the insulating film in correspondence to the light-receiving portion; and heating the metallic light-shielding film by irradiation of the metallic light-shielding film with a microwave to permit selective annealing of a laminated portion with the metallic light-shielding film in the insulating film.

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.

Abstract: A solid-state imaging device includes: an on-chip color filter having color filter components formed to correspond to pixels; light-shielding members each formed at the boundary of adjacent color filter components; and lenses concave toward a light incident direction, each formed directly below a corresponding one of the color filter components by self-alignment with the light-shielding members as a mask.

Abstract: CMOS image sensor pixel sensor cells, methods for fabricating the pixel sensor cells and design structures for fabricating the pixel sensor cells are designed to allow for back side illumination in global shutter mode by providing light shielding from back side illumination of at least one transistor within the pixel sensor cells. In a first particular generalized embodiment, a light shielding layer is located and formed interposed between a first semiconductor layer that includes a photoactive region and a second semiconductor layer that includes the at least a second transistor, or a floating diffusion, that is shielded by the light blocking layer.

Abstract: A photodetector used in, for example, an optical pickup device includes: a photodetection unit including a plurality of photodetection elements and provided on a semiconductor chip; a light transmitting unit formed on the upper surface of the photodetection unit; and a light shielding layer having an optical aperture and disposed on the upper surface of the light transmitting unit, with these components being formed integrally. The light transmitting unit is configured such that the distance between the optical aperture and the photodetection unit is maintained constant, and the optical aperture is formed such that the inner portion of an incident light beam passes therethrough. The positioning of the photodetector and the positioning of the optical aperture such as a pinhole or a slit for adjusting the light beam entering the photodetection elements of the photodetector can be made at the same time.

Abstract: Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation of the signal processing part from being unstable due to stray charges occurring by light with which the light blocking layer is irradiated. In a light-incident part 12 having a light receiving element 36 and a signal processing circuit 38 that processes an output signal from the light receiving element 36, which are formed on a SOI substrate, a plurality of contact plugs 52 electrically connected to the light blocking layer 42 are laminated in the thickness direction of the SOI substrate along an edge of the light blocking layer that blocks the sunlight, with the uppermost of wiring layers on the signal processing circuit 38 as the light blocking layer 42.

Abstract: Provided are a solar cell and a method of fabricating the same. The solar cell includes: a substrate; a rear electrode layer which is formed on the substrate and includes molybdenum (Mo); a protective layer which is formed on the rear electrode layer and includes silicon (Si); a light-absorbing layer which is formed on the protective layer and includes selenium (Se) and at least one of copper (Cu), gallium (Ga), and indium (In); and a transparent electrode layer formed on the light-absorbing layer.

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Abstract: A solid-state imaging device includes a semiconductor substrate and a plurality of photoelectric conversion elements provided in the semiconductor substrate, wherein the plurality of photoelectric conversion elements include: effective photoelectric conversion elements which are photoelectric conversion elements for obtaining an imaging signal corresponding to light from a subject; and OB photoelectric conversion elements which are photoelectric conversion elements for obtaining a reference signal of an optical black level, and the solid-state imaging device further includes a first shielding layer provided at least over the effective pixel area as defined herein and having an opening provided at least over a part of the effective photoelectric conversion elements, and a second shielding layer provided over the OB pixel area as defined herein and electrically separated from the first shielding layer.

Abstract: A photodiode formed over a silicon substrate is disclosed. The photodiode includes a light-receiving region formed of a diffusion region of a first conduction type at the surface of the silicon substrate and forming a pn junction; an intermediate region formed of a diffusion region of the first conduction type at the surface of the silicon substrate so as to be included in the light-receiving region; a contact region formed of a diffusion region of the first conduction type at the surface of the silicon substrate so as to be included in the intermediate region; a shield layer formed of a diffusion region of a second conduction type in a part of the surface of the silicon substrate outside the intermediate region; and an electrode in contact with the contact region. The shield layer faces the side end part of the diffusion region forming the intermediate region.

Abstract: In a solid-state imaging device including an on-chip microlens and a light-receiving part to receive incident light condensed by the on-chip microlens, an optical waveguide extending from an undersurface part of the microlens to the light-receiving part and for guiding the incident light condensed by the microlens to the light-receiving part is formed to be integrated with the microlens. By this, since the incident light condensed by the microlens is incident on the light-receiving part with little loss, the sensitivity is improved.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit which is arranged in a semiconductor substrate, a charge holding portion which is arranged in the semiconductor substrate and temporarily holds a charge generated by the photoelectric conversion unit, a first transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge generated by the photoelectric conversion unit to the charge holding portion, a charge-voltage converter which is arranged in the semiconductor substrate and converts a charge into a voltage, and a second transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge held by the charge holding portion to the charge-voltage converter, and the first transfer electrode is arranged to cover the charge holding portion, and not to overlap the second transfer electrode when viewed from a direction perpendicular to the upper surface of the semiconductor substrate.

Abstract: An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor. An embodiment also refers to an integration process of such a sensor, as well as to an ambient light sensor made with such a sensor.

Abstract: An optical device such as an image sensor alleviates reduction in image quality caused by light reaching a peripheral circuit section other than a light receiving section. A semiconductor substrate includes an interconnect layer, a light receiving section provided with a plurality of light receiving elements on the interconnect layer, and a peripheral circuit section provided in a same layer as the light receiving section, and surrounding the light receiving section. Light entry elements are provided on a surface of the semiconductor substrate. A light shielding film is formed of a metal layer, and covers at least one part of a region corresponding to the peripheral circuit section. A first electrode is formed in the region corresponding to the peripheral circuit section, and in an opening of the light shielding film to be electrically isolated from the light shielding film.

Abstract: A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiode region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.

Abstract: The image sensing device includes a semiconductor substrate; a light shielding layer that is arranged above the semiconductor substrate and shields an optical black region and a peripheral region from light; a first capacitance element that is arranged between the light shielding layer in the peripheral region and the semiconductor substrate and is used to temporarily hold signals output from effective pixels or optical black pixels; and a second capacitance element that is arranged between the light shielding layer in the optical black region and the semiconductor substrate so as to shield the photoelectric conversion units of the optical black pixels from light.

Abstract: A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have the gate profile of a transfer gate or a reset gate. The HDR transistor may be located on a side of the photodiode that is the same, opposite to, or perpendicular to the transfer gate. The leakage through the HDR transistor may be controlled by modifying the photodiode implants around the transistor. The photodiode implants at the HDR transistor may be placed similarly to the implants at the transfer gate. However, when the photodiode implants are moved away from the HDR transistor, leakage is reduced. When the photodiode implants are moved farther under the HDR transistor, leakage is increased to the extent desirable. The leakage through the HDR transistor may also be controlled by applying a voltage across the transistor.

Abstract: A solid-state imaging device is provided and includes: a semiconductor substrate; a plurality of photoelectric conversion elements arranged in a two-dimensional array in a surface portion of the semiconductor substrate; a conductive light shielding film above the surface portion, the conductive light shielding film having openings at a light-incident side of the respective photoelectric conversion elements; a connection pad formed in the semiconductor substrate and to be applied with a voltage from outside the solid-state imaging device; and a wiring that connects the connection pad and the conductive light shielding film, wherein the wiring has a wiring structure having a time constant smaller than that of one linear wiring.

Abstract: An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

Abstract: A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.

Abstract: A solid state imaging device comprises: a photoelectric converting portion; a charge transferring portion including a charge transfer electrode for transferring an electric charge generated in the photoelectric converting portion; and a shielding film formed through an insulating film containing nitrogen on the charge transferring portion, wherein the insulating film containing the nitrogen includes: a first insulating film that covers at least a part of an upper surface of the charge transfer electrode; and a second insulating film formed to reach the upper surface of the charge transfer electrode from the photoelectric converting portion, and the first and second insulating films include a discontinuing portion.

Abstract: A vertical-type CMOS image sensor and a fabricating method thereof by which capacitance between an upper line and a dark shield layer can be effectively reduced. The vertical-type CMOS image sensor can include an inter-metal dielectric layer having a plurality of metal lines formed over a semiconductor substrate; a passivation oxide layer formed over the inter-metal dielectric layer, wherein the uppermost surface of the passivation oxide layer includes an inclined portion between a lower portion and an upper portion corresponding to a portion of the inter-metal dielectric layer having a plurality of the metal lines; a dark shield layer formed over the upper portion of the passivation oxide layer; and a nitride layer formed over the semiconductor substrate including the dark shield layer.

Abstract: A solid-state imaging device according to the present invention includes light-receiving units formed on a surface in a substrate, a photo-shield film formed above the substrate and having openings above the light-receiving units, a light-transmissive insulating film formed above the photo-shield film and in the openings in the photo-shield film, downwardly convex in-layer lenses made of a material having a refractive index different from that of the light-transmissive insulating film and formed above the light-transmissive insulating film, an OCCF formed above the in-layer lenses and having a first filter and a second filter which are positioned above different ones of the light-receiving units and transmit lights of different wavelengths, and OCLs formed above the in-layer lenses. The width of the openings in the photo-shield film and the curvature of the in-layer lenses provided under the first filter and those under the second filter are different from each other, respectively.

Abstract: An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.

Abstract: A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.

Abstract: A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.

Abstract: An image sensor includes a photoelectric conversion portion generating signal charges, a voltage conversion portion for converting the signal charges to a voltage, a charge increasing portion for increasing the number of the signal charges stored in the photoelectric conversion portion, a first light shielding film formed to cover at least one part of the charge increasing portion and a second light shielding film provided separately from the first light shielding film and formed to cover the voltage conversion portion.

Abstract: This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

Abstract: A method for fabricating an image sensor is disclosed. First, a semiconductor substrate is provided, in which a photosensitive region is defined on the semiconductor substrate. At least one photosensitive material is then formed on the semiconductor substrate, and a first exposure process is performed to form a tapered pattern in the photosensitive material. A second exposure process is performed to form a straight foot pattern in the photosensitive material, and a developing process is performed to remove the tapered pattern and straight foot pattern to form the photosensitive material into a plurality of photosensitive blocks. A reflow process is conducted thereafter to form the photosensitive blocks into a plurality of microlenses.

Abstract: A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element and is drawn out through the hole to the outside of the light shielding wall. The wiring layer has a pattern including a first part that is located within the hole and a second part that is located on the outside of the hole and has a larger width compared to the width of the first part, the width of the second part being the same with or larger than the width of the hole.

Abstract: Methods and apparatuses are disclosed which provide imager devices having a light blocking material layer formed over peripheral circuitry outside a pixel cell array.

Abstract: Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography.

Abstract: An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.

Abstract: An apparatus is provided. The apparatus generally comprises a photoreceptive region and a circuit region formed in a substrate. A multilayer wiring region is then formed on the substrate over at least a portion of the circuit region. The multilayer wiring region includes a wiring layer and a light-blocking layer. The wiring layer is coupled to the circuit region, and the light-blocking wall has a metal layer that is arranged along at least a portion of the perimeter of the photoreceptive region and that is formed in the same process step as the wiring layer.

Abstract: A solid-state imaging device includes: a pixel section including, in a semiconductor substrate, plural photoelectric conversion sections that photoelectrically convert incident light to generate signal charges; metal wirings formed, on a first insulating film formed on the semiconductor substrate, above regions among the photoelectric conversion sections and above the periphery of the pixel section; a second insulating film formed on the first insulating film to cover the metal wirings; a first light shielding film formed on the second insulating film and having an opening above the pixel section; and a second light shielding film formed above the metal wirings above the pixel section and having thickness smaller than that of the first light shielding film.

Abstract: A backside illuminated imaging sensor includes a semiconductor substrate, a metal interconnect layer and a light attenuating layer. The semiconductor substrate has a front surface, a back surface, and includes at least one imaging pixel formed on the front surface of the semiconductor substrate. The metal interconnect layer is electrically coupled to the imaging pixel and the light attenuating layer is coupled between the metal interconnect layer and the front surface of the semiconductor substrate. In operation, the imaging pixel receives light from the back surface of the semiconductor substrate, where a portion of the received light propagates through the imaging pixel to the light attenuating layer. The light attenuating layer is configured to substantially attenuate the portion of light received from the imaging pixel.

Abstract: A CMOS imager and non-volatile memory are integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. A protective layer covers the non-volatile memory contained on the substrate for blocking light received by the CMOS imager. The protective layer can be a metal layer used as an interconnect over other areas of the substrate or an opaque layer provided during the fabrication process. Integrating a CMOS imager, non-volatile memory and peripheral circuitry for decoding and processing optical information received by the CMOS imager allows for a single chip image sensing device, such as a digital camera.