Abstract: A method for manufacturing a see-through solar battery module includes disposing a first mask above a transparent substrate, forming a plurality of metal electrode layers alternately arranged on the transparent substrate, disposing a second mask above the transparent substrate, forming a photoelectric transducing layer on each metal electrode layer by the second mask, removing a part of each photoelectric transducing layer along a first direction to expose a part of each metal electrode layer, forming a transparent electrode layer on each photoelectric transducing layer and each metal electrode layer, and removing a part of each transparent electrode layer and a part of each photoelectric transducing layer to expose a part of each metal electrode layer so as to make the plurality of metal electrode layers and the transparent electrode layer in series connection along a second direction respectively.

Abstract: Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.

Abstract: A thin film photovoltaic device includes a substrate and a first conductive layer coupled to the substrate. The first conductive layer includes at least one first groove extending through a first portion of the first conductive layer to a portion of the substrate. The device also includes at least one semiconductor layer coupled to a remaining portion of the first conductive layer and the portion of the substrate. The at least one semiconductor layer includes a plurality of non-overlapping vias, each via extending through a portion of the at least one semiconductor layer to a portion of the first conductive layer. The device further includes a second conductive layer coupled to a remaining portion of the at least one semiconductor layer and portions of the first conductive layer. The second conductive layer includes at least one second groove extending through a portion of the second conductive layer to a portion of the at least one semiconductor layer.

Abstract: Photo detectors are provided. The photo detector includes a photoelectric conversion layer between a lower carrier transportation layer and an upper carrier transportation layer, and a common electrode on the upper carrier transportation layer opposite to the photoelectric conversion layer. The photoelectric conversion layer includes a plurality of light absorption layers and each of the light absorption layers contains silicon nanocrystals. The silicon nanocrystals in respective ones of the light absorption layers have different sizes from each other.

Abstract: A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.

Abstract: A method for forming the photodiode device is provided. The method comprises providing a substrate, then a transparent conductive film is formed on the substrate. A conductive polymer is formed on the transparent conductive film. A photoactive layer is formed on the conductive polymer. A charge blocking layer is formed on the photoactive layer. Finally, a cathode metal is formed on the charge blocking layer.

Abstract: Thin film photovoltaic devices are generally provided having three terminals. In one embodiment, the thin film photovoltaic device can include a first submodule defined by a first plurality of photovoltaic cells between a first dead cell and a first terminal cell; a second submodule defined by a second plurality of photovoltaic cells between a second dead cell and a second terminal cell; and a joint bus bar electrically connected to the first dead cell and the second dead cell. The first dead cell is adjacent to the second dead cell, with the first dead cell being separated from the second dead cell via a separation scribe. Methods are also generally provided for forming a thin film photovoltaic device.

Abstract: A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper.

Abstract: A solar battery module includes a substrate, striped metal electrode layers formed alternately on the substrate along a first direction, striped photoelectric transducing layers, striped transparent electrode layers, and electrode lines. Each striped photoelectric transducing layer is formed on the striped metal electrode layer and the substrate along the first direction. Each striped transparent electrode layer is formed on the striped metal electrode layer and the striped photoelectric transducing layer along the first direction. The striped transparent electrode layers and the striped metal electrode layers are in series connection along a second direction. The electrode lines are formed alternately on each striped transparent electrode layer or between each striped photoelectric transducing layer and each striped transparent electrode layer along the second direction.

Abstract: A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode, semiconductor light absorbing layer, and top electrode. Interconnects may be formed between the top and bottom electrodes by electrochemical plating of conductive materials in recessed regions formed between the electrodes. In some embodiments, the conductive materials may be optically opaque metals having non-light transmissive properties. The interconnects are highly conductive and minimize the thickness of the top electrode layer, thereby enhancing light transmission and cell energy conversion performance.

Abstract: Provided are a solar cell module and a method of manufacturing the same. The solar cell module including: a substrate; a bottom electrode layer discontinuously formed on the substrate; a light absorbing layer formed on the bottom electrode layer and including a first trench that exposes the bottom electrode layer; and a transparent electrode layer extending from the top of the light absorbing layer to the bottom electrode layer at the bottom of the first trench, and including a first oxide layer, a metal layer, and a second oxide layer, all of which are staked on the light absorbing layer and the bottom electrode layer.

Abstract: Disclosed are a dye-sensitized solar cell module and a method of manufacturing the same. The dye-sensitized solar cell module includes a working electrode formed by stacking a collector and a photo-electrode to which a dye is adsorbed on a transparent conductive substrate; a counter electrode formed by stacking a collector and a catalytic electrode on a transparent conductive substrate; and an electrolyte filled in a space between the working electrode and the counter electrode sealed by a sealant. A glass substrate for the working electrode of glass substrates forming the transparent conductive substrates for the electrodes is a thin glass plate substrate thinner than the glass substrate for the working electrode.

Abstract: Thin film photovoltaic devices are provided that include a first submodule and a second submodule. An insulation layer can be positioned over first submodule and second submodule such that the insulation layer extends from a first bus bar to a second bus bar. A conductive link can be positioned on the insulation layer and electrically connected to the first bus bar and the second bus bar. An encapsulation substrate can be positioned over the first submodule and the second submodule. A first prong can extend through a first aperture defined in the encapsulation substrate to contact the conductive link to establish an electrical connection thereto, and a second prong can extend through a second aperture defined in the encapsulation substrate to contact the joint bus bar to establish an electrical connection thereto.

Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.

Abstract: A photovoltaic device is disclosed, which includes a transparent substrate, a set of photovoltaic cells and at least one bypass diode device. The photovoltaic cells are connected to each other in series and include a plurality of front electrode segments formed on the transparent substrate, a plurality of photoelectric conversion segments of semiconductor material formed on the front electrode segments, and a plurality of first back electrode segments of metal formed on the photoelectric conversion segments respectively. The bypass diode device is formed on the transparent substrate and substantially equal in layer construction to each of the photovoltaic cells, where the bypass diode and the photovoltaic cells share two or more of the front electrode segments.

Abstract: In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on a second support, wherein the second panel faces the first panel, and wherein the first layer and the second layer include substantially amorphous cadmium tin oxide. Method of making a photovoltaic device is also included.

Abstract: The present invention generally includes an apparatus and process of forming a conductive layer on a surface of a host substrate, which can be directly used to form a portion of an electronic device. More specifically, one or more of the embodiments disclosed herein include a process of forming a conductive layer on a surface of a substrate using an electrospinning type deposition process. Embodiments of the conductive layer forming process described herein can be used to reduce the number of processing steps required to form the conductive layer, improve the electrical properties of the formed conductive layer and reduce the conductive layer formation process complexity over current state-of-the-art conductive layer formation techniques. Typical electronic device formation processes that can benefit from one or more of the embodiments described herein include, but are not limited to processes used to form solar cells, electronic visual display devices and touchscreen type technologies.

Abstract: The present disclosure describes multi-functional windows. Functions of the multi-functional windows described herein can include transmitting incident light, generating photovoltaic power from incident light, and emitting light. In some implementations, a multi-functional window may be placed in a photovoltaic state, a lighting state, or a neutral state. A multi-functional window can continue to function as a normal window in transmitting a portion of any incident light in any of the photovoltaic, lighting, and neutral states. A multi-functional window can be implemented in a building or automobile.

Abstract: A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.

Abstract: A method for manufacturing a see-through solar battery module includes disposing a first mask above a transparent substrate, forming a plurality of metal electrode layers alternately arranged on the transparent substrate, disposing a second mask above the transparent substrate, forming a photoelectric transducing layer on each metal electrode layer by the second mask, removing a part of each photoelectric transducing layer along a first direction to expose a part of each metal electrode layer, forming a transparent electrode layer on each photoelectric transducing layer and each metal electrode layer, and removing a part of each transparent electrode layer and a part of each photoelectric transducing layer to expose a part of each metal electrode layer so as to make the plurality of metal electrode layers and the transparent electrode layer in series connection along a second direction respectively.

Abstract: According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.

Abstract: A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: An optoelectonice device package, an array of optoelectronic device packages and a method of fabricating an optoelectronic device package. The array includes a plurality of optoelectronic device packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package including two geometrically parallel transparent edge portions and two geometrically parallel non-transparent edge portions, oriented substantially orthogonal to the transparent edge portions. The transparent edge portions are configured to overlap at least one adjacent package, and may be hermetically sealed. The optoelectronic device portion fabricated using R2R manufacturing techniques.

Abstract: Provided is a bulk heterojunction inorganic thin film solar cell and a method for fabricating the same. More particularly, the solar cell includes an inorganic thin film having a bulk heterojunction formed by using vertically grown n-type semiconductor nanostructure electrodes and filling the void spaces among the nanostructures with p-type semiconductor materials, unlike the known planar type inorganic thin film solar cells including n-type semiconductors and p-type semiconductors.

Abstract: Provided are a solar cell and a method of fabricating the same. The solar cell may include a first electrode including a first substrate attached with a first transparent conductive film and a metal oxide nanotube provided on the first substrate and adsorbed with a dye, a second electrode facing the first electrode, and an electrolyte filling between the first and second electrodes. In example embodiments, metal nanoparticles may be provided on an inner surface of the metal oxide nanotube.

Abstract: A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer.

Abstract: Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed between the bottom electrode and a transparent conducting layer. One or more electrical contacts between the transparent conducting layer and the back plane are formed through the transparent conducting layer, the active layer, the flexible bulk conductor and the insulating layer. The electrical contacts are electrically isolated from the active layer, the bottom electrode and the insulating layer.

Abstract: A graphene structure includes a conductive layer and a protective layer. The conductive layer is formed of graphene doped with a dopant, and the protective layer is laminated on the conductive layer and formed of a material having a higher oxidation-reduction potential than water.

Abstract: Solar thin film modules are provided with reduced lateral dimensions of isolation trenches and contact trenches, which provide for a series connection of the individual solar cells. To this end lithography and etch techniques are applied to pattern the individual material layers, thereby reducing parasitic shunt leakages compared to conventional laser scribing techniques. In particular, there may be series connected solar cells formed on a flexible substrate material that are highly efficient in indoor applications.

Abstract: This invention relates to a method of manufacturing a substrate for photoelectric conversion device including, on a substrate, a first electrode layer formed of a transparent conductive material. The method includes a first transparent conductive film forming step of forming a first transparent conductive film on the substrate, a second transparent conductive film forming step of forming a second transparent conductive film under a film forming condition that an etching rate is low compared with the first transparent conductive film at a later etching step, and an etching step of wet-etching the second and first transparent conductive films to form recesses that pierce through at least the second transparent conductive film, with the bottoms of the recesses being present in the first transparent conductive film.

Abstract: Techniques for reducing the resistivity of carbon nanotube and graphene materials are provided. In one aspect, a method of producing a doped carbon film having reduced resistivity is provided. The method includes the following steps. A carbon material selected from the group consisting of: a nanotube, graphene, fullerene and pentacene is provided. The carbon material and a dopant solution comprising an oxidized form of ruthenium bipyridyl are contacted, wherein the contacting is carried out under conditions sufficient to produce the doped carbon film having reduced resistivity.

Abstract: A see-through thin film solar cell includes a first substrate, a photoelectric conversion film formed on the surface of the first substrate, a second substrate and a packaging adhesive film located between the second substrate and the photoelectric conversion film. The surface of the photovoltaic film is ablated via a laser to form at least one hollow-out zone through a patterned photo mask, thus averts the problem of reduced lifespan of laser equipment in conventional techniques that form patterns through laser ablation in frequent switching manner. By controlling the thickness of the patterned photo mask, grey scale patterns can be displayed and resolution thereof can also be increased, thereby improve the added value of the thin film solar cell.

Abstract: An image sensor package includes an image sensor chip and crystalline handler. The image sensor chip includes a substrate, and a plurality of photo detectors and contact pads at the front surface of the substrate. The crystalline handler includes opposing first and second surfaces, and a cavity formed into the first surface. A compliant dielectric material is disposed in the cavity. The image sensor front surface is attached to the crystalline substrate handler second surface. A plurality of electrical interconnects each include a hole aligned with one of the contact pads, with a first portion extending from the second surface to the cavity and a second portion extending through the compliant dielectric material, a layer of insulation material formed along a sidewall of the first portion of the hole, and conductive material extending through the first and second portions of the hole and electrically coupled to the one contact pad.

Abstract: A solid-state imaging device includes a semiconductor substrate and a photoelectric conversion layer above the semiconductor substrate. The photoelectric conversion layer includes a lower electrode having a side surface insulated with an insulating film, a photoelectric conversion film on the lower electrode, and an upper electrode. The upper electrode and the lower electrode sandwich the photoelectric conversion film. An upper surface of the lower electrode is lower than an upper surface of the insulating film.

Abstract: A photo sensor and a method of fabricating the same are disclosed, the photo sensor of the present invention has ultra-high Schottky junction area per unit volume, and the photo sensor comprises: a first conductive layer; plural metallic nanowires, in which one end of each metallic nanowire connects with the first conductive layer and is covered with a semiconductive layer having a width of 1 nm to 20 nm; and a second conductive layer locating opposite to the first conductive layer, whereby the plural metallic nanowires locate between the first conductive layer and the second conductive layer, and the semiconductive layer contacts with the second conductive layer, wherein the photo sensor of the present invention is used to detect ultra violet (UV) light with a wavelength of 10 nm-400 nm.

Abstract: Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

Abstract: An arrangement includes a transparent substrate, at least one transparent electrically conductive layer on the substrate. At least one photoelectric device for converting radiation energy into electrical energy can be arranged on the at least one transparent electrically conductive layer. The at least one transparent electrically conductive layer includes at least one first transparent electrically conductive layer and at least one second transparent electrically conductive layer.

Abstract: In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

Abstract: Provided is a dye-sensitized solar cell, and a method for manufacturing the same, that in a technology in which a current collector electrode is used instead of a transparent conductive film, can be manufactured by a simple cell producing operation and is capable of achieving a desirably thin thickness for the current collector electrode. A dye-sensitized solar cell 10 includes a transparent substrate 12 provided on the side where solar light is incident, a conductive substrate 14 that serves as a cathode and is provided opposite the transparent substrate 12, a porous semiconductor layer 16, a porous conductive metal layer 18 that serves as a current collector electrode, and a porous insulating layer 20. The porous conductive metal layer 18 is a layer that has a thickness of 0.3 ?m to 100 ?m and is deposited on the porous insulating layer 20.

Abstract: Methods and apparatuses are provided in connection with a transparent electrode on organic photovoltaic cells. A layer of dissolvable material is formed on a substrate. A solution having conductive nanowires suspended therein is deposited on the layer of dissolvable material. The solution is evaporated to form a nanowire mesh. The nanowire mesh is heated to sinter junctions between nanowires in the nanowire mesh. The nanowire mesh is affixed on a layer of one or more organic photovoltaic cells. The layer of dissolvable material is dissolved to deposit the nanowire mesh on the layer of one or more organic photovoltaic cells.

Abstract: In one embodiment, a method is provided for fabrication of a semitransparent conductive mesh. A first solution having conductive nanowires suspended therein and a second solution having nanoparticles suspended therein are sprayed toward a substrate, the spraying forming a mist. The mist is processed, while on the substrate, to provide a semitransparent conductive material in the form of a mesh having the conductive nanowires and nanoparticles. The nanoparticles are configured and arranged to direct light passing through the mesh. Connections between the nanowires provide conductivity through the mesh.

Abstract: An electrode includes a substantially planar metallic thin film layer with a patterned structure including a plurality of parallel lines or a plurality of crossed lines, the metallic thin film layer configured to transmit an incident light through the metallic thin film layer.

Abstract: A method is provided for manufacturing a high-performance plane-type detector without the increase in cost or decrease in yield accompanying the increase in the number of masks. The method includes the first step of forming a first electrode and a control electrode from a first electroconductive film deposited on a substrate, the second step of depositing an insulating film and a semiconductor film in that order after the first step, the third step of depositing an impurity semiconductor film and a second electroconductive film in that order after the second step, and forming a common electrode wire and a first electroconductive member from the second electroconductive film, and the fourth step of forming with the same mask a second electrode and a second electroconductive member from a transparent electroconductive oxide film formed after the third step, and impurity semiconductor layers from the impurity semiconductor film.

Abstract: A method for controlling surface morphology of a transparent conductive oxide film (TCO) is provided. A substrate is provided as a basis for forming a solar cell. Onto the substrate, a seed layer is deposited. Then, the method includes depositing the transparent conductive oxide film (TCO) above the seed layer. The seed layer is adapted to control the surface morphology of the transparent conductive oxide film. The surface of the transparent conductive oxide film is etched in order to provide a front contact of the solar cell.

Abstract: A hybrid solar cell and a method for manufacturing the same is disclosed, wherein the hybrid solar cell comprises a semiconductor wafer having a predetermined polarity; a first semiconductor layer on one surface of the semiconductor wafer; a second semiconductor layer on the other surface of the semiconductor wafer, wherein the second semiconductor layer is different in polarity from the first semiconductor layer; a first electrode on the first semiconductor layer; a second electrode on the second semiconductor layer; and at least one of first and second interfacial layers, wherein the first interfacial layer containing ZnO is formed between the first semiconductor layer and the first electrode, and the second interfacial layer containing ZnO is formed between the second semiconductor layer and the second electrode, wherein the hybrid solar cell is provided with the interfacial layer between the first semiconductor layer and the first electrode and/or between the second semiconductor layer and the second elec

Abstract: A method for manufacturing a solar cell including a photovoltaic layer, a first electrode layer, a second electrode layer, an insulating layer and a light-transparent conductive layer is provided. The photovoltaic layer has a first surface and a second surface. The first electrode layer having at least one gap is disposed on the first surface, wherein the at least one gap exposes a portion of the photovoltaic layer. The second electrode layer is disposed on the second surface. The insulating layer having a plurality of pores is located on the photovoltaic layer exposed by the at least one gap, wherein the holes expose a portion of the photovoltaic layer. The light-transparent conductive layer covers the insulating layer and is connected with the first electrode layer. The transparent electrode is connected with the photovoltaic layer through at least a part of the pores.

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: A photovoltaic cell (10) is fabricated by depositing a first transparent conductive layer (12) onto a substrate carrier (11). Portions of the first transparent conductive layer (12) are selectively removed to form a plurality of discrete transparent conductive protruding regions (13) or a plurality of discrete indentations (27) in the first transparent conductive layer (12). A silicon layer (14) comprising a charge separating junction is deposited onto the plurality of discrete protruding regions (13) or onto the plurality of discrete indentations (27) by chemical vapour deposition. A second transparent conductive layer (15) is deposited on the silicon layer (14) by chemical vapour deposition.