Device Having Potential Or Surface Barrier (epo) Patents (Class 257/E31.128)
  • Patent number: 10998376
    Abstract: Techniques for the integration of SiGe/Si optical resonators with qubit and CMOS devices using structured substrates are provided. In one aspect, a waveguide structure includes: a wafer; and a waveguide disposed on the wafer, the waveguide having a SiGe core surrounded by Si, wherein the wafer has a lower refractive index than the Si (e.g., sapphire, diamond, SiC, and/or GaN). A computing device and a method for quantum computing are also provided.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: May 4, 2021
    Assignee: International Business Machines Corporation
    Inventors: Jason S. Orcutt, Devendra K. Sadana
  • Patent number: 10910431
    Abstract: An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: February 2, 2021
    Assignee: Micron Technology, Inc.
    Inventor: Chandra Mouli
  • Patent number: 10698159
    Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A first dielectric layer comprised of a first silicon nitride is formed. The waveguide is arranged over the first dielectric layer. A second dielectric layer is formed that is arranged over the waveguide. The second dielectric layer is composed of a second silicon nitride having a lower absorption of optical signals than the first silicon nitride.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: June 30, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob
  • Patent number: 10663669
    Abstract: An optical device may include an optical coupling structure to couple a silicon-germanium photodetector to an integrated optics circuit. The optical coupling structure may comprise a silicon waveguide. The silicon waveguide may be tapered such that a thickness of the silicon waveguide at a first end of the optical coupling structure is smaller than a thickness of the silicon waveguide at a second end of the optical coupling structure, and may be tapered such that a width of the silicon waveguide at the first end is smaller than a width of the silicon waveguide at the second end. The optical coupling structure may include a silicon-nitride waveguide that covers the silicon waveguide, and is tapered such that a width of the silicon-nitride waveguide at the first end is smaller than a width of the silicon-nitride waveguide at the second end. The optical coupling structure may include a silica waveguide.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: May 26, 2020
    Assignee: Lumentum Operations LLC
    Inventors: Lance Thompson, Shibnath Pathak
  • Patent number: 10601199
    Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8<y<1, and SizGe(1-z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: March 24, 2020
    Assignee: International Business Machines Corporation
    Inventors: Cheng-Wei Cheng, Effendi Leobandung, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu
  • Patent number: 10571710
    Abstract: Provided is an optical component including multiple annular zones that each provides a predetermined phase to a light flux passing through an optical system, where for each of the annular zones, the surface closer to the inner circumference of the optical component is substantially equal in area to the surface closer to the outer circumference thereof, and in a cross section in the radial direction of the optical component, the tangent at an outer circumferential end of each annular zone is substantially equal in inclination to the tangent at an inner circumferential end thereof.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: February 25, 2020
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuhiko Oota, Takeshi Shimano
  • Patent number: 10388702
    Abstract: An organic light emitting display device includes a substrate; first and second organic light emitting diodes laterally shifted with respect to each other on the substrate; an encapsulation layer covering the first and second organic light emitting diodes, the encapsulation layer including a plurality of layers; and a first color filter and a second color filter each within the plurality of layers, the first color filter and the second color filter being respectively disposed over respective ones of the first and second organic light emitting diodes at respectively different heights from the substrate.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: August 20, 2019
    Assignee: LG Display Co., Ltd.
    Inventors: Dongyoung Kim, YongBaek Lee, Ho-Jin Kim, Goeun Jung
  • Patent number: 10386225
    Abstract: A semiconductor light reception module is provided with a stem, a cap covering the stem, a holder superimposed on the cap, and a receptacle inserted into the holder. The holder has a main body section covering the lens in the cap. An opening passing from the opposite side of the cap through the main body section and reaching the lens is provided in the main body section of the holder. A fixing screw is inserted into a screw hole provided in the holder and a screw tip of a screw main body section of the fixing screw abuts against a side surface of the receptacle.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: August 20, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yohei Mikami
  • Patent number: 10330528
    Abstract: The present disclosure includes an optical assembly position adjustment device. An embodiment of the optical assembly position adjustment device includes a base and at least one housing. The base includes an upper side and a lateral side. The upper side allows the setting of at least one optoelectronic device, and the lateral includes a first position adjustment structure. The at least one housing includes an interior side including a second position adjustment structure. The second position adjustment structure matches the first position adjustment structure for combination. In addition, the at least one housing includes an optical input/output window for optical transmission. The distance between the optical input/output window and the upper side can be adjusted by the increase or decrease of a contact area between the first and second position adjustment structures.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: June 25, 2019
    Assignee: NIEN-YI INDUSTRIAL CORPORATION
    Inventors: Tung-Lou Lin, Hsin-Ni Lee
  • Patent number: 10168482
    Abstract: A wavelength division multiplexing filter and methods of forming the same include an optical dielectric filter having multiple dielectric layers. The optical dielectric filter has a high reflectivity at a first wavelength and a high transmissivity at one or more additional wavelengths. The dielectric layers include a structure of layers following the pattern L-[M/2-H-M/2]N-L, where L layers include a first dielectric material, H layers include a second dielectric material, M/2 layers have a mixture of the first and second dielectric material and have a thickness half that needed to provide reflectivity at the first wavelength, and N is a number of repetitions for the structure in brackets.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: January 1, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Jean Benoit Héroux
  • Patent number: 10134926
    Abstract: A time-of-flight detector includes a semiconductor layer and a light modulation structure. The semiconductor layer is configured to translate light radiation into electrical charge. The light modulation structure is configured to increase a path of interaction of light radiation through the semiconductor layer. In some example implementations, the light modulation structure is configured to deflect at least some light radiation at an increased angle through the semiconductor layer. In some example implementations, the light modulation structure is configured to reflect light radiation more than once through the semiconductor layer.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: November 20, 2018
    Assignee: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Onur Can Akkaya, Satyadev Nagaraja, Tamer Elkhatib, Cyrus Bamji, Swati Mehta
  • Patent number: 9823128
    Abstract: Multispectral imaging systems are disclosed. An exemplary multispectral imager includes a narrow-band absorptive filter array and a sensor array comprising a plurality of pixels. The narrow-band absorptive filter array has a plurality of filter elements, each filter element being associated with a pixel of the sensor array. The filter elements are organized into groups of N filter elements, where N is greater than three. Each filter element absorbs one narrow band and transmits N?1 narrow bands. The group of N filter elements absorbs all N narrow bands.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: November 21, 2017
    Assignee: Arizona Board of Regents on behalf of the University of Arizona
    Inventors: Stanley Pau, Amit Ashok
  • Patent number: 9247121
    Abstract: An image sensor, an electric device using the same and a focusing method of the electric device are provided. The image sensor comprises a plurality of image capturing units and a detecting unit. Each image capturing unit includes an image capturing pixel and a first micro lens. The first micro lens is disposed in front of the image capturing pixel. The detecting unit has a focus detecting pixel and a second micro lens. The second micro lens is disposed in front of the image detecting pixel. A length of the second micro lens is different from a length of the first micro lenses.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: January 26, 2016
    Assignee: ABILITY ENTERPRISE CO., LTD.
    Inventor: Jong-Tae Lee
  • Patent number: 9231004
    Abstract: According to one embodiment, there is provided a solid-state imaging apparatus having an imaging region. In the imaging region, a plurality of pixels are two-dimensionally arranged. The plurality of pixels include a first pixel and a second pixel. The first pixel is arranged near a center of the imaging region. The second pixel is arranged at a position farther away from the center of the imaging region than the first pixel. The first pixel includes a first micro lens having a substantially circular shape as viewed in a plan view. The second pixel includes a second micro lens having a substantially elliptical shape as viewed in a plan view and having an area larger than an area of the first micro lens.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: January 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuhiro Nagata, Ninao Sato, Katsuo Iwata, Takayuki Ogasahawa
  • Patent number: 8928893
    Abstract: The internal propagation of radiation between a radiation source and radiation detector mounted within a sensor package is prevented by the use of an optical isolator. The optical isolator is formed by the combination of a baffle mounted between the source and detector and a groove formed in an upper surface of the sensor package between the source and detector. A bottom of the groove is positioned adjacent to an upper edge of the baffle.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: January 6, 2015
    Assignees: STMicroelectronics (Research & Development) Limited, STMicroelectronics (Grenoble 2) SAS
    Inventors: Ewan Findlay, Colin Campbell, Gemma Ramsey, Eric Saugier
  • Patent number: 8916946
    Abstract: The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: December 23, 2014
    Assignees: Nippon Telegraph and Telephone Corporation, NTT Electronics Corporation
    Inventors: Yoshiyuki Doi, Yoshifumi Muramoto, Takaharu Ohyama
  • Patent number: 8901694
    Abstract: An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the waveguide; and a light-transmitting insulating layer interposed between the end surface of the waveguide and the first end surface of the photodetector.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Pil-Kyu Kang, Joong-Han Shin, Byung-Lyul Park, Gil-Heyun Choi
  • Patent number: 8872294
    Abstract: Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: October 28, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Zvi Sternberg, Ofer Tehar-Zahav
  • Patent number: 8866003
    Abstract: A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H2 and the inert gas.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: October 21, 2014
    Assignee: International Business Machines Corporation
    Inventors: Ahmed Abou-Kandil, Keith E. Fogel, Jee H. Kim, Mohamed Saad, Devendra K. Sadana
  • Patent number: 8846433
    Abstract: An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: September 30, 2014
    Assignee: Intellectual Ventures II LLC
    Inventor: Won-Ho Lee
  • Patent number: 8822258
    Abstract: A wafer-level bonding method for fabricating wafer level camera lenses is disclosed. The method includes: providing a lens wafer including lenses arranged in an array and a sensor wafer including sensors arranged in an array; measuring and analyzing an FFL of each lens to obtain a corresponding FFL compensation value for each lens; forming a thin transparent film (TTF) on each sensor of the sensor wafer, and the thickness of TTF is determined by the FFL compensation value of the corresponding lens; aligning and bonding the lens wafer with the sensor wafer having TTFs formed thereon. Since the focal length of each lens is adjusted to compensate the FFL of the lens by adding a TTF of transparent optical material with an index of refraction that is similar to the index of refraction of the sensor cover glass, the FFL variation of each camera lens can be reduced.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: September 2, 2014
    Assignee: OmniVision Technologies (Shanghai) Co., Ltd.
    Inventor: Regis Fan
  • Patent number: 8816458
    Abstract: A photoelectric conversion device comprises a photoelectric conversion layer; a plurality of structures made of a dielectric substance; and a medium layer for transmitting light interposed between the photoelectric conversion layer and the structures or between the structures, or both, wherein the plurality of structures and the medium layer satisfy ndie>nmed and Dave×nmed/?max<0.3, wherein ?max is a maximal sensitivity wavelength at which the sensitivity of the photoelectric conversion layer to light energy is maximal, nmed is a refractive index of the medium layer at the wavelength ?max, ndie is a refractive index of the structures at the wavelength ?max, and Dave is an average of shortest distances between an light exposure surface of the photoelectric conversion layer and the structures.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: August 26, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takanobu Sato, Tazuko Kitazawa
  • Patent number: 8736005
    Abstract: In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: May 27, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masahiro Kobayashi, Takafumi Kishi, Yuichiro Yamashita
  • Patent number: 8704322
    Abstract: The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: April 22, 2014
    Assignees: Nippon Telegraph and Telephone Corporation, NTT Electronics Corporation
    Inventors: Yoshiyuki Doi, Yoshifumi Muramoto, Takaharu Ohyama
  • Patent number: 8664667
    Abstract: An optical waveguide device of the present invention comprises: an optical waveguide including a plurality of cores configured to emit outgoing light from distal ends thereof; and a light-receiving element including a plurality of photo diodes configured to receive the outgoing light. Respective pitches L1 between adjacent cores are greater than pitches L2 between adjacent photo diodes. At least one photo diode on which only outgoing light of each core is incident is present with respect to each of the cores.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: March 4, 2014
    Assignee: Nitto Denko Corporation
    Inventor: Noriyuki Juni
  • Publication number: 20140054736
    Abstract: Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal.
    Type: Application
    Filed: August 21, 2012
    Publication date: February 27, 2014
    Inventors: Roy Meade, Zvi Sternberg, Ofer Tehar-Zahav
  • Publication number: 20140007928
    Abstract: Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a reflective layer disposed on the substrate, and one or more junctions conformally disposed on the one or more structures.
    Type: Application
    Filed: July 6, 2012
    Publication date: January 9, 2014
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib Wober
  • Patent number: 8610225
    Abstract: A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 ?m. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: December 17, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christian Müller, Werner Kuhlmann
  • Publication number: 20130313668
    Abstract: A photronic device includes a substrate having an opening through the substrate. The photronic device further includes an insulating layer over the substrate including over the opening. The photronic device further includes an active layer over the insulating layer. The photronic device further includes a photoactive device formed in the active layer, wherein the photoactive device is over the opening. The photronic device further includes active electronic circuitry formed in the active layer. The photronic device further includes a reflective layer on the insulating layer in the opening.
    Type: Application
    Filed: May 24, 2012
    Publication date: November 28, 2013
    Inventors: Gregory S. Spencer, John R. Alvis, Hsiao-Hui Chen, Joseph F. Orcutt, Srivatsa G. Kundalgurki
  • Publication number: 20130307104
    Abstract: A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
    Type: Application
    Filed: May 21, 2012
    Publication date: November 21, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Jeng-Shyan Lin, Wen-De Wang
  • Publication number: 20130298980
    Abstract: A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
    Type: Application
    Filed: May 10, 2012
    Publication date: November 14, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: KEITH E. FOGEL, AUGUSTIN J. HONG, JEEHWAN KIM, DEVENDRA K. SADANA
  • Publication number: 20130299931
    Abstract: An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.
    Type: Application
    Filed: August 28, 2012
    Publication date: November 14, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
  • Patent number: 8569857
    Abstract: A bolometer has a semiconductor membrane having a single-crystalline portion, and spacers so as to keep the semiconductor membrane at a predetermined distance from an underlying substrate. The complementarily doped regions of the single-crystalline portion form a diode and the predetermined distance corresponds to a fourth of an infrared wavelength.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: October 29, 2013
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventors: Piotr Kropelnicki, Marco Russ, Holger Vogt
  • Patent number: 8558292
    Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: October 15, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventor: Robert M. Guidash
  • Patent number: 8541813
    Abstract: A homojunction type high-speed photodiode has an active area of greater than at least 50 microns (?m) or preferably greater than 60 microns (?m) in diameter, which has an p-i-n junction epitaxial layer formed on a semiconductor substrate and includes a first ohmic contact layer, an absorption layer, a collector layer and a second ohmic contact layer. No more absorbance occurs in the collector layer of InGaAs, by means of completely absorbing the photon energy in advance by the absorption layer in which the absorption layer has powerful optical absorption constant. Not only can the prior art problems be solved, such as surface absorbance, but also improved electron transport can be achieved by using InGaAs as the constructing material, compared to other materials. The resistance capacitance (RC) for the entire structure can be significantly reduced, and the limitations to the bandwidth resulted from the carrier transport time can be improved.
    Type: Grant
    Filed: July 14, 2012
    Date of Patent: September 24, 2013
    Assignee: National Central University
    Inventors: Jin-Wei Shi, Kai-Lun Chi
  • Publication number: 20130228887
    Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.
    Type: Application
    Filed: September 12, 2012
    Publication date: September 5, 2013
    Applicant: RAYTHEON COMPANY
    Inventors: Justin Gordon Adams Wehner, Edward Peter Gordon Smith
  • Patent number: 8519499
    Abstract: According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: August 27, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mariko Saito, Ikuko Inoue, Takeshi Yoshida
  • Patent number: 8519501
    Abstract: A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: August 27, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hitoshi Tada, Yasuo Nakajima, Yasuhiro Kunitsugu
  • Patent number: 8508043
    Abstract: A topographical feature is formed proximate to a conductive bond pad that is used to couple a solder bump to a semiconductor die. The topographical feature is separated from the conductive bond pad by a gap. In one embodiment, the topographical feature is formed at a location that is slightly beyond the perimeter of the solder bump, wherein an edge of the bump is aligned vertically to coincide with the gap separating the conductive bond pad from the topographical feature. The topographical feature provides thickness enhancement of a non-conductive layer disposed over the semiconductor die and the conductive bond pad and stress buffering.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: August 13, 2013
    Assignee: International Business Machines Corporation
    Inventors: Timothy H. Daubenspeck, Jeffrey P. Gambino, Christopher D. Muzzy, David L. Questad, Wolfgang Sauter, Timothy D. Sullivan
  • Publication number: 20130181310
    Abstract: A semiconductor apparatus and an image sensor package. The image sensor package includes a semiconductor apparatus including a body having a first surface and a second surface which face each other, a first trench formed in the first surface of the body, a second trench formed in the second surface of the body, a third trench formed in a bottom surface of the second trench, and an aperture connecting the first trench to the third trench, a transparent member placed in the third trench and covering the aperture, a mounting board placed under the second surface of the body, and an image sensor chip placed between the mounting board and the transparent member and surrounded by the second trench.
    Type: Application
    Filed: August 30, 2012
    Publication date: July 18, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Hyun-Su JUN
  • Publication number: 20130087875
    Abstract: In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region.
    Type: Application
    Filed: September 27, 2012
    Publication date: April 11, 2013
    Applicant: Canon Kabushiki Kaisha
    Inventor: Canon Kabushiki Kaisha
  • Publication number: 20130062718
    Abstract: A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.
    Type: Application
    Filed: May 22, 2012
    Publication date: March 14, 2013
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hitoshi TADA, Yasuo NAKAJIMA, Yasuhiro KUNITSUGU
  • Publication number: 20130043550
    Abstract: Certain embodiments provide a solid-state imaging apparatus including a first impurity layer, a second impurity layer, a third impurity layer, and an electrode. The first impurity layer is a photoelectric conversion layer, and is formed to have a constant depth on a semiconductor substrate. The second impurity layer is formed on a surface of the first impurity layer, to have a depth which becomes shallower toward a direction from the first impurity layer to the third impurity layer. The third impurity layer is formed in a position spaced apart from the first impurity layer and the second impurity layer on the surface of the semiconductor substrate. The electrode can transport electric charges from the first impurity layer to the third impurity layer, and is formed between the second impurity layer and the third impurity layer, on the surface of the semiconductor substrate.
    Type: Application
    Filed: March 15, 2012
    Publication date: February 21, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tomoyuki ARAI, Fumiaki SANO
  • Publication number: 20130042913
    Abstract: Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency.
    Type: Application
    Filed: March 25, 2011
    Publication date: February 21, 2013
    Applicant: TETRASUN, INC.
    Inventors: Douglas Crafts, Oliver Schultz-Wittman
  • Publication number: 20130023083
    Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes an opaque layer or a black light filter layer in conjunction with an opaque layer, covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer and the black light filter layer where the light blocking portion is desired, but not over the active section. The method also provides for forming microlenses over the photosensors in the active section.
    Type: Application
    Filed: September 21, 2012
    Publication date: January 24, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Taiwan Semiconductor Manufacturing Co., Ltd.
  • Publication number: 20130020620
    Abstract: An embodiment relates to an image sensor comprising (a) a optical pipe comprising a core and a cladding, and (b) a pair of photosensitive elements comprising a central photosensitive element and a peripheral photosensitive element, wherein the central photosensitive element is operably coupled to the core and the peripheral photosensitive element is operably coupled to the cladding, and methods of fabricating and using the same. The image sensor could further comprise a lens structure or an optical coupler or an optical coupler over the optical pipe, wherein the lens structure or the optical coupler or the optical coupler is operably coupled to the optical pipe.
    Type: Application
    Filed: July 23, 2012
    Publication date: January 24, 2013
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventor: Munib WOBER
  • Publication number: 20130001726
    Abstract: An optical waveguide device of the present invention comprises: an optical waveguide including a plurality of cores configured to emit outgoing light from distal ends thereof; and a light-receiving element including a plurality of photo diodes configured to receive the outgoing light. Respective pitches L1 between adjacent cores are greater than pitches L2 between adjacent photo diodes. At least one photo diode on which only outgoing light of each core is incident is present with respect to each of the cores.
    Type: Application
    Filed: December 27, 2010
    Publication date: January 3, 2013
    Applicant: NITTO DENKO CORPORATION
    Inventor: Noriyuki Juni
  • Patent number: 8344469
    Abstract: An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: January 1, 2013
    Assignee: Intellectual Ventures II LLC
    Inventor: Won-Ho Lee
  • Publication number: 20120313113
    Abstract: A photovoltaic organic light emitting diodes (PV-OLED) device and manufacturing method thereof are introduced. The PV-OLED device includes a substrate, a solar cell module, and a plurality of organic light emitting diodes. The solar cell module is disposed on a surface of the substrate. The organic light emitting diodes are disposed on the same surface of the substrate that the solar cell module is disposed on. The organic light emitting diode is electrically isolated from the solar cell module. The solar cell module can apply power to the organic light emitting diodes for emitting light.
    Type: Application
    Filed: September 9, 2011
    Publication date: December 13, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chien-Chih Chen, Ching-Chiun Wang, Chih-Yung Huang, Szu-Hao Chen, Chan-Hsing Lo, Chung-Ping Chiang
  • Patent number: RE45493
    Abstract: An image sensor system using offset analog to digital converters. The analog to digital converters require a plurality of clock cycles to carry out the actual conversion. These conversions are offset in time from one another, so that at each clock cycle, new data is available. A CMOS image sensor converts successive analog signals, representing at least a portion of an image, into successive digital signals using an analog to digital circuit block. Multiple clock cycles may be used by the circuit block to fully convert an analog signal into a corresponding digital signal. The conversion of one analog signal into a corresponding digital signal by the circuit block may be offset in time and partially overlapping with the conversion of a successive analog signal into its corresponding successive digital signal by the circuit block.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: April 28, 2015
    Assignee: Round Rock Research, LLC
    Inventors: Eric R. Fossum, Sandor L. Barna