Abstract: A semiconductor image sensor includes a pixel. The pixel includes a first substrate; and a photodiode in the first substrate. The semiconductor image sensor further includes an interconnect structure electrically connected to the pixel. The semiconductor image sensor further includes a reflection structure between the interconnect and the photodiode, wherein the reflection structure is configured to reflect light passing through the photodiode back toward the photodiode.

Abstract: A light-trapping image sensor includes a pixel array and a lens array. The pixel array is formed in and on a semiconductor substrate and including photosensitive pixels each including a reflective material forming a cavity around a portion of semiconductor material to at least partly trap light that has entered the cavity. The cavity has a ceiling at a light-receiving surface of the semiconductor substrate, and the ceiling forms an aperture for receiving the light into the cavity. The lens array is disposed on the pixel array. Each lens of the lens array is aligned to the aperture of a respective cavity to focus the light into the cavity through the aperture.

Abstract: An imaging device includes: a first pad portion that is connected to a voltage supply line in an aperture pixel region, and to which a reference voltage from outside of the semiconductor substrate is supplied; and a second pad portion that is connected to the voltage supply line in the light-shielded pixel region, and to which the reference voltage from outside of the semiconductor substrate is supplied, the second pad portion being separated from the first pad portion.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an insulator layer arranged over a substrate. Further, an upper routing structure is arranged over the insulator layer and is made of a semiconductor material. A lower optical routing structure is arranged below the substrate and is embedded in a lower dielectric structure. The integrated chip further includes an anti-reflective layer that is arranged below the substrate and directly contacts the substrate.

Abstract: A lens module arranged on a light-sensing surface of a sensor module is disclosed. The lens module includes at least one lens stacked along an optical axis and the lens includes a lens fixing element and a plurality of lens elements. The lens fixing element is provided with a plurality of through holes each receiving a corresponding one of the lens elements, and an edge of the lens elements is secured to the lens fixing element. According to the present invention, each of the through holes has the same shape as a corresponding one of photosensitive regions of the light-sensing surface, as well as a side wall spaced from the photosensitive region in the direction perpendicular to the optical axis by a relatively uniform gap. In the present invention, there is also provided a camera comprising such a lens module.

Abstract: A photovoltaic structure includes a substrate; and a plurality of off-axis, doped silicon regions outward of the substrate. The plurality of off-axis, doped silicon regions have an off-axis lattice orientation at a predetermined non-zero angle. A plurality of photovoltaic devices of a first chemistry are located outward of the plurality of off-axis, doped silicon regions. Optionally, a plurality of photovoltaic devices of a second chemistry, different than the first chemistry, are located outward of the substrate and are spaced away from the plurality of off-axis, doped silicon regions.

Abstract: Embodiments of the present disclosure provide a display panel, a mobile terminal and a method for controlling a mobile terminal which may allow a user to perform single hand operations on a large-size mobile terminal to improve the convenience of the mobile terminal. The display panel includes: a first substrate; a second substrate arranged opposite to the first substrate; and a single hand operation sensing unit arranged on the first substrate or the second substrate, which is configured to sense a single hand holding operation of a user and to trigger the display panel to demagnify an operation graphic interface displayed in full-screen and display the demagnified operation graphic interface in a predetermined single hand operation comfortable region positioned on the basis of a holding position in case that the single hand holding operation of the user is sensed.

Abstract: The incidence of incident light transmitted through a photoelectric conversion unit onto a charge holding unit, a pixel in the adjacency, and the like can be blocked in a pixel. An image sensor includes a pixel, a wiring layer, and an incident light attenuation unit. The pixel includes a photoelectric conversion unit that is formed in a semiconductor substrate and performs photoelectric conversion based on incident light, and a pixel circuit that generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate different from a surface onto which the incident light is incident, and transports either the image signal or a signal applied to the pixel circuit. The incident light attenuation unit attenuates the incident light transmitted through the photoelectric conversion unit.

Abstract: Manufacture of an imaging element in which light entering a pixel without being transmitted through a color filter arranged in the pixel is attenuated is simplified. An imaging element includes a pixel and an incident light attenuating section. The pixel includes a color filter through which light having a predetermined wavelength of light from a subject is transmitted, and a photoelectric conversion section generating charges responding to the light transmitted through the color filter. The incident light attenuating section is arranged between the subject and the color filter, and attenuates the light entering the photoelectric conversion section without being transmitted through the color filter arranged in the pixel.

Abstract: Techniques for the integration of SiGe/Si optical resonators with qubit and CMOS devices using structured substrates are provided. In one aspect, a waveguide structure includes: a wafer; and a waveguide disposed on the wafer, the waveguide having a SiGe core surrounded by Si, wherein the wafer has a lower refractive index than the Si (e.g., sapphire, diamond, SiC, and/or GaN). A computing device and a method for quantum computing are also provided.

Abstract: An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.

Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A first dielectric layer comprised of a first silicon nitride is formed. The waveguide is arranged over the first dielectric layer. A second dielectric layer is formed that is arranged over the waveguide. The second dielectric layer is composed of a second silicon nitride having a lower absorption of optical signals than the first silicon nitride.

Abstract: An optical device may include an optical coupling structure to couple a silicon-germanium photodetector to an integrated optics circuit. The optical coupling structure may comprise a silicon waveguide. The silicon waveguide may be tapered such that a thickness of the silicon waveguide at a first end of the optical coupling structure is smaller than a thickness of the silicon waveguide at a second end of the optical coupling structure, and may be tapered such that a width of the silicon waveguide at the first end is smaller than a width of the silicon waveguide at the second end. The optical coupling structure may include a silicon-nitride waveguide that covers the silicon waveguide, and is tapered such that a width of the silicon-nitride waveguide at the first end is smaller than a width of the silicon-nitride waveguide at the second end. The optical coupling structure may include a silica waveguide.

Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8<y<1, and SizGe(1-z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.

Abstract: Provided is an optical component including multiple annular zones that each provides a predetermined phase to a light flux passing through an optical system, where for each of the annular zones, the surface closer to the inner circumference of the optical component is substantially equal in area to the surface closer to the outer circumference thereof, and in a cross section in the radial direction of the optical component, the tangent at an outer circumferential end of each annular zone is substantially equal in inclination to the tangent at an inner circumferential end thereof.

Abstract: An organic light emitting display device includes a substrate; first and second organic light emitting diodes laterally shifted with respect to each other on the substrate; an encapsulation layer covering the first and second organic light emitting diodes, the encapsulation layer including a plurality of layers; and a first color filter and a second color filter each within the plurality of layers, the first color filter and the second color filter being respectively disposed over respective ones of the first and second organic light emitting diodes at respectively different heights from the substrate.

Abstract: A semiconductor light reception module is provided with a stem, a cap covering the stem, a holder superimposed on the cap, and a receptacle inserted into the holder. The holder has a main body section covering the lens in the cap. An opening passing from the opposite side of the cap through the main body section and reaching the lens is provided in the main body section of the holder. A fixing screw is inserted into a screw hole provided in the holder and a screw tip of a screw main body section of the fixing screw abuts against a side surface of the receptacle.

Abstract: The present disclosure includes an optical assembly position adjustment device. An embodiment of the optical assembly position adjustment device includes a base and at least one housing. The base includes an upper side and a lateral side. The upper side allows the setting of at least one optoelectronic device, and the lateral includes a first position adjustment structure. The at least one housing includes an interior side including a second position adjustment structure. The second position adjustment structure matches the first position adjustment structure for combination. In addition, the at least one housing includes an optical input/output window for optical transmission. The distance between the optical input/output window and the upper side can be adjusted by the increase or decrease of a contact area between the first and second position adjustment structures.

Abstract: A wavelength division multiplexing filter and methods of forming the same include an optical dielectric filter having multiple dielectric layers. The optical dielectric filter has a high reflectivity at a first wavelength and a high transmissivity at one or more additional wavelengths. The dielectric layers include a structure of layers following the pattern L-[M/2-H-M/2]N-L, where L layers include a first dielectric material, H layers include a second dielectric material, M/2 layers have a mixture of the first and second dielectric material and have a thickness half that needed to provide reflectivity at the first wavelength, and N is a number of repetitions for the structure in brackets.

Abstract: A time-of-flight detector includes a semiconductor layer and a light modulation structure. The semiconductor layer is configured to translate light radiation into electrical charge. The light modulation structure is configured to increase a path of interaction of light radiation through the semiconductor layer. In some example implementations, the light modulation structure is configured to deflect at least some light radiation at an increased angle through the semiconductor layer. In some example implementations, the light modulation structure is configured to reflect light radiation more than once through the semiconductor layer.

Abstract: Multispectral imaging systems are disclosed. An exemplary multispectral imager includes a narrow-band absorptive filter array and a sensor array comprising a plurality of pixels. The narrow-band absorptive filter array has a plurality of filter elements, each filter element being associated with a pixel of the sensor array. The filter elements are organized into groups of N filter elements, where N is greater than three. Each filter element absorbs one narrow band and transmits N?1 narrow bands. The group of N filter elements absorbs all N narrow bands.

Abstract: An image sensor, an electric device using the same and a focusing method of the electric device are provided. The image sensor comprises a plurality of image capturing units and a detecting unit. Each image capturing unit includes an image capturing pixel and a first micro lens. The first micro lens is disposed in front of the image capturing pixel. The detecting unit has a focus detecting pixel and a second micro lens. The second micro lens is disposed in front of the image detecting pixel. A length of the second micro lens is different from a length of the first micro lenses.

Abstract: According to one embodiment, there is provided a solid-state imaging apparatus having an imaging region. In the imaging region, a plurality of pixels are two-dimensionally arranged. The plurality of pixels include a first pixel and a second pixel. The first pixel is arranged near a center of the imaging region. The second pixel is arranged at a position farther away from the center of the imaging region than the first pixel. The first pixel includes a first micro lens having a substantially circular shape as viewed in a plan view. The second pixel includes a second micro lens having a substantially elliptical shape as viewed in a plan view and having an area larger than an area of the first micro lens.

Abstract: The internal propagation of radiation between a radiation source and radiation detector mounted within a sensor package is prevented by the use of an optical isolator. The optical isolator is formed by the combination of a baffle mounted between the source and detector and a groove formed in an upper surface of the sensor package between the source and detector. A bottom of the groove is positioned adjacent to an upper edge of the baffle.

Abstract: The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.

Abstract: An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the waveguide; and a light-transmitting insulating layer interposed between the end surface of the waveguide and the first end surface of the photodetector.

Abstract: Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal.

Abstract: A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H2 and the inert gas.

Abstract: An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other.

Abstract: A wafer-level bonding method for fabricating wafer level camera lenses is disclosed. The method includes: providing a lens wafer including lenses arranged in an array and a sensor wafer including sensors arranged in an array; measuring and analyzing an FFL of each lens to obtain a corresponding FFL compensation value for each lens; forming a thin transparent film (TTF) on each sensor of the sensor wafer, and the thickness of TTF is determined by the FFL compensation value of the corresponding lens; aligning and bonding the lens wafer with the sensor wafer having TTFs formed thereon. Since the focal length of each lens is adjusted to compensate the FFL of the lens by adding a TTF of transparent optical material with an index of refraction that is similar to the index of refraction of the sensor cover glass, the FFL variation of each camera lens can be reduced.

Abstract: A photoelectric conversion device comprises a photoelectric conversion layer; a plurality of structures made of a dielectric substance; and a medium layer for transmitting light interposed between the photoelectric conversion layer and the structures or between the structures, or both, wherein the plurality of structures and the medium layer satisfy ndie>nmed and Dave×nmed/?max<0.3, wherein ?max is a maximal sensitivity wavelength at which the sensitivity of the photoelectric conversion layer to light energy is maximal, nmed is a refractive index of the medium layer at the wavelength ?max, ndie is a refractive index of the structures at the wavelength ?max, and Dave is an average of shortest distances between an light exposure surface of the photoelectric conversion layer and the structures.

Abstract: In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region.

Abstract: The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.

Abstract: An optical waveguide device of the present invention comprises: an optical waveguide including a plurality of cores configured to emit outgoing light from distal ends thereof; and a light-receiving element including a plurality of photo diodes configured to receive the outgoing light. Respective pitches L1 between adjacent cores are greater than pitches L2 between adjacent photo diodes. At least one photo diode on which only outgoing light of each core is incident is present with respect to each of the cores.

Abstract: Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal.

Abstract: Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a reflective layer disposed on the substrate, and one or more junctions conformally disposed on the one or more structures.

Abstract: A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 ?m. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.

Abstract: A photronic device includes a substrate having an opening through the substrate. The photronic device further includes an insulating layer over the substrate including over the opening. The photronic device further includes an active layer over the insulating layer. The photronic device further includes a photoactive device formed in the active layer, wherein the photoactive device is over the opening. The photronic device further includes active electronic circuitry formed in the active layer. The photronic device further includes a reflective layer on the insulating layer in the opening.

Abstract: A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.

Abstract: A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.

Abstract: An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.

Abstract: A bolometer has a semiconductor membrane having a single-crystalline portion, and spacers so as to keep the semiconductor membrane at a predetermined distance from an underlying substrate. The complementarily doped regions of the single-crystalline portion form a diode and the predetermined distance corresponds to a fourth of an infrared wavelength.

Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

Abstract: A homojunction type high-speed photodiode has an active area of greater than at least 50 microns (?m) or preferably greater than 60 microns (?m) in diameter, which has an p-i-n junction epitaxial layer formed on a semiconductor substrate and includes a first ohmic contact layer, an absorption layer, a collector layer and a second ohmic contact layer. No more absorbance occurs in the collector layer of InGaAs, by means of completely absorbing the photon energy in advance by the absorption layer in which the absorption layer has powerful optical absorption constant. Not only can the prior art problems be solved, such as surface absorbance, but also improved electron transport can be achieved by using InGaAs as the constructing material, compared to other materials. The resistance capacitance (RC) for the entire structure can be significantly reduced, and the limitations to the bandwidth resulted from the carrier transport time can be improved.

Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.

Abstract: A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.

Abstract: According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.

Abstract: A topographical feature is formed proximate to a conductive bond pad that is used to couple a solder bump to a semiconductor die. The topographical feature is separated from the conductive bond pad by a gap. In one embodiment, the topographical feature is formed at a location that is slightly beyond the perimeter of the solder bump, wherein an edge of the bump is aligned vertically to coincide with the gap separating the conductive bond pad from the topographical feature. The topographical feature provides thickness enhancement of a non-conductive layer disposed over the semiconductor die and the conductive bond pad and stress buffering.

Abstract: A semiconductor apparatus and an image sensor package. The image sensor package includes a semiconductor apparatus including a body having a first surface and a second surface which face each other, a first trench formed in the first surface of the body, a second trench formed in the second surface of the body, a third trench formed in a bottom surface of the second trench, and an aperture connecting the first trench to the third trench, a transparent member placed in the third trench and covering the aperture, a mounting board placed under the second surface of the body, and an image sensor chip placed between the mounting board and the transparent member and surrounded by the second trench.

Abstract: An image sensor system using offset analog to digital converters. The analog to digital converters require a plurality of clock cycles to carry out the actual conversion. These conversions are offset in time from one another, so that at each clock cycle, new data is available. A CMOS image sensor converts successive analog signals, representing at least a portion of an image, into successive digital signals using an analog to digital circuit block. Multiple clock cycles may be used by the circuit block to fully convert an analog signal into a corresponding digital signal. The conversion of one analog signal into a corresponding digital signal by the circuit block may be offset in time and partially overlapping with the conversion of a successive analog signal into its corresponding successive digital signal by the circuit block.