Comprising Compound Other Than Group Ii-vi, Iii-v, And Iv Compound (epo) Patents (Class 257/E33.037)
  • Patent number: 9034685
    Abstract: The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: May 19, 2015
    Assignees: Dow Global Technologies LLC, California Institute of Technology
    Inventors: Gregory M. Kimball, Jeffrey P. Bosco, Harry A. Atwater, Nathan S. Lewis, Marty W. Degroot, James C. Stevens
  • Patent number: 8884268
    Abstract: The present disclosure is directed to an integrated circuit and its formation. In some embodiments, the integrated circuit includes a diffusion barrier layer. The diffusion barrier layer can be arranged to prevent diffusion of the Si and O2 from a Si substrate into a Group III nitride layer. The diffusion barrier layer can comprise Al2O3. In some embodiments, the integrated circuit further comprises a lattice-matching structure disposed between the silicon substrate and a Group III nitride layer.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: November 11, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Ming Chen, Han-Chin Chiu, Chung-Yi Yu, Chia-Shiung Tsai
  • Patent number: 8513662
    Abstract: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.
    Type: Grant
    Filed: May 11, 2009
    Date of Patent: August 20, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hisato Yabuta, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi
  • Patent number: 8426259
    Abstract: The present invention provides an array substrate, comprising: a base substrate; a pixel electrode pattern and a gate pattern formed on the base substrate, the gate pattern comprises a gate scanning line and a gate electrode of a transistor, both of the gate scanning line and the gate electrode comprise transparent conductive metal layer and the gate metal layer stacking on the substrate, each pixel electrode in the pixel electrode pattern comprises transparent conductive metal layer; a gate insulating layer on the pixel electrode pattern and the gate pattern, an active layer pattern on the gate insulating layer and corresponding to the gate electrode, a via hole in the gate insulating layer for exposing the pixel electrode; and a source/drain pattern on the gate insulating layer, the source/drain pattern comprises a data scanning line crossing with the gate scanning line, source and drain electrodes of the transistor, and the drain electrode is in contact with the pixel electrode through the via hole.
    Type: Grant
    Filed: June 1, 2011
    Date of Patent: April 23, 2013
    Assignee: Beijing BOE Optoelectronics Technology Co., Ltd.
    Inventors: Xiang Liu, Seongyeol Yoo, Jianshe Xue
  • Patent number: 8421115
    Abstract: A semiconductor material includes a matrix semiconductor includes constituent atoms bonded to each other into a tetrahedral bond structure, and a heteroatom Z doped to the matrix semiconductor, in which the heteroatom Z is inserted in a bond so as to form a bond-center structure with an stretched bond length, and the bond-center structure is contained in a proportion of 1% or more based on the heteroatom Z.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: April 16, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazushige Yamamoto, Tatsuo Shimizu
  • Publication number: 20130009152
    Abstract: The invention relates to light-emitting devices (200); in particular, to high effective light-emitting diodes on the base of nitrides of III group elements of the periodic system. The proposed light-emitting device comprises a substrate, a buffer layer (120) formed on the substrate, a first layer (130) from n-type semiconductor formed on the buffer layer, a second layer (150) from p-type semiconductor and an active layer (240) arranged between the first and second layers. The first, the second and the active layers form interlacing of the layers with zinc blende phase structure and layers with wurtzite phase structure forming heterophase boundaries therebetween.
    Type: Application
    Filed: March 15, 2011
    Publication date: January 10, 2013
    Inventors: Yuri Georgievich Shreter, Yuri Toomasovich Rebane, Aleksey Vladimirovich Mironov
  • Patent number: 8309967
    Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.
    Type: Grant
    Filed: April 6, 2010
    Date of Patent: November 13, 2012
    Inventor: Chien-Min Sung
  • Publication number: 20120261659
    Abstract: A light emitting element according to the invention comprises a plurality of layers which is interposed between a pair of electrodes, in which at least one of the plurality of layers is formed of a layer containing a light emitting material, and the layer containing a light emitting material is interposed between a layer containing an oxide semiconductor and/or metal oxide and a material having a higher hole transporting property than an electron transporting property, and a layer containing an oxide semiconductor and/or metal oxide, a material having a higher electron transporting property than a hole transporting property and a material which can donate electrons to the material having a higher electron transporting property than a hole transporting property.
    Type: Application
    Filed: April 27, 2012
    Publication date: October 18, 2012
    Inventors: Hisao Ikeda, Junichiro Sakata, Daisuke Kumaki, Satoshi Seo
  • Patent number: 8253145
    Abstract: Semiconductor devices having strong excitonic binding are disclosed. In some embodiments, a semiconductor device includes at least one active layer composed of a first compound, and at least one barrier layer composed of a second compound and disposed on at least one surface of the at least one active layer. An energy band gap of the at least one barrier layer is wider than energy band gap of the at least one active layer, and the first and/or second compounds are selected to strengthen an excitonic binding between an electron and a hole in the at least one active layer.
    Type: Grant
    Filed: April 29, 2009
    Date of Patent: August 28, 2012
    Assignee: University of Seoul Industry Cooperation Foundation
    Inventor: Doyeol Ahn
  • Publication number: 20120211746
    Abstract: An array substrate including a substrate having a pixel region, a gate line and a gate electrode on the substrate, the gate electrode being connected to the gate line, a gate insulating layer on the gate line and the gate electrode, an oxide semiconductor layer on the gate insulating layer, an auxiliary pattern on the oxide semiconductor layer, and source and drain electrodes on the auxiliary pattern, the source and drain electrodes being disposed over the auxiliary pattern and spaced apart from each other to expose a portion of the auxiliary pattern, the exposed portion of the auxiliary pattern exposing a channel region and including a metal oxide over the channel region, wherein a data line crosses the gate line to define the pixel region and is connected to the source electrode, a passivation layer on the source and drain electrodes and the data line.
    Type: Application
    Filed: March 9, 2012
    Publication date: August 23, 2012
    Inventors: Yong-Yub Kim, Chang-II Ryoo
  • Publication number: 20120199828
    Abstract: A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.
    Type: Application
    Filed: April 17, 2012
    Publication date: August 9, 2012
    Applicant: INDIAN INSTITUTE OF TECHNOLOGY
    Inventors: M.S. Ramachandra RAO, E. Senthil KUMAR
  • Publication number: 20120193739
    Abstract: A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.
    Type: Application
    Filed: January 27, 2012
    Publication date: August 2, 2012
    Applicant: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Peter Hackenschmied, Christian Schröter, Matthias Strassburg
  • Patent number: 8148742
    Abstract: An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: April 3, 2012
    Assignee: 3M Innovative Properties Company
    Inventors: Thomas J. Miller, Michael A. Haase
  • Publication number: 20120061660
    Abstract: A Light Emitting Diode (LED) formed on a substrate of a material selected from at least one of a semiconductor, an insulator and a metal; at least one semiconductor film layer of ZnO or GaN deposited on the substrate; a nanotips array of ZnO or its ternary compound, the array being grown either directly or indirectly on a surface of at least one semiconductor film layer; at least one transparent and conductive oxide (TCO) layer deposited on at least one semiconductor film layer; and a semiconductor p-n junction under a forward bias voltage.
    Type: Application
    Filed: April 14, 2011
    Publication date: March 15, 2012
    Applicant: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
    Inventors: Yicheng Lu, Jian Zhong
  • Publication number: 20120040483
    Abstract: Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.
    Type: Application
    Filed: October 24, 2011
    Publication date: February 16, 2012
    Applicant: University of Seoul Industry Cooperation Foundation
    Inventor: Doyeol Ahn
  • Patent number: 8097885
    Abstract: Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.
    Type: Grant
    Filed: May 27, 2008
    Date of Patent: January 17, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tomoyuki Oike, Tatsuya Iwasaki
  • Publication number: 20110297929
    Abstract: The present invention provides an array substrate, comprising: a base substrate; a pixel electrode pattern and a gate pattern formed on the base substrate, the gate pattern comprises a gate scanning line and a gate electrode of a transistor, both of the gate scanning line and the gate electrode comprise transparent conductive metal layer and the gate metal layer stacking on the substrate, each pixel electrode in the pixel electrode pattern comprises transparent conductive metal layer; a gate insulating layer on the pixel electrode pattern and the gate pattern, an active layer pattern on the gate insulating layer and corresponding to the gate electrode, a via hole in the gate insulating layer for exposing the pixel electrode; and a source/drain pattern on the gate insulating layer, the source/drain pattern comprises a data scanning line crossing with the gate scanning line, source and drain electrodes of the transistor, and the drain electrode is in contact with the pixel electrode through the via hole.
    Type: Application
    Filed: June 1, 2011
    Publication date: December 8, 2011
    Applicant: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xiang LIU, Seongyeol YOO, Jianshe XUE
  • Patent number: 8058641
    Abstract: Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: November 15, 2011
    Assignee: University of Seoul Industry Corporation Foundation
    Inventor: Doyeol Ahn
  • Publication number: 20110272690
    Abstract: A light emitting element of the invention includes n pieces of light emitting layers (n is a natural number) between first and second electrodes. A first layer and a second layer are provided between the mth light emitting layer (m is a natural number of 1?m?n) and the m+1th light emitting layer. The first and second layers are contacted to each other. The first layer contain a substance that transports holes easily and a substance with an electron accepting property. The second layer contains a substance that transports electrons easily and a substance with an electron donating property. Molybdenum oxide is used as the substance with the electron accepting property.
    Type: Application
    Filed: May 5, 2011
    Publication date: November 10, 2011
    Inventors: Daisuke Kumaki, Hisao Ikeda, Hiroko Abe, Satoshi Seo
  • Patent number: 8043879
    Abstract: A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.
    Type: Grant
    Filed: October 13, 2010
    Date of Patent: October 25, 2011
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Michihiro Sano, Hiroyuki Kato, Naochika Horio
  • Publication number: 20110186877
    Abstract: An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.
    Type: Application
    Filed: April 23, 2009
    Publication date: August 4, 2011
    Inventors: Michael A. Haase, Thomas J. Miller, Andrew J. Ouderkirk, Catherine A. Leatherdale, Tommie W. Kelley
  • Publication number: 20110114995
    Abstract: Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.
    Type: Application
    Filed: November 18, 2009
    Publication date: May 19, 2011
    Applicant: University of Seoul Industry Cooperation Foundation
    Inventor: Doyeol Ahn
  • Patent number: 7923837
    Abstract: A microelectronic device includes a non-polymeric substrate, an organic interlayer, and a indium tin oxide layer formed on the organic interlayer; the indium tin oxide layer including an ablated feature within said indium tin oxide layer, wherein said indium tin oxide layer is formed by an indium tin oxide solution that is laser ablated prior to sintering. Applicant respectfully submits that the above amendments bring the Abstract into compliance with MPEP §608.01 (b). Accordingly, Applicant respectfully requests reconsideration and withdrawal of the objection to the abstract.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: April 12, 2011
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Chinmay Betrabet, Curt Lee Nelson
  • Publication number: 20110062441
    Abstract: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.
    Type: Application
    Filed: May 11, 2009
    Publication date: March 17, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hisato Yabuta, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi
  • Patent number: 7872269
    Abstract: Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN semiconductor layer. A gallium nitride semiconductor crystal 2 including a light emitting region is formed on the R plane of a sapphire substrate 1. In addition, in another constitution, a gallium nitride semiconductor crystal 2 is formed on the A plane of a GaN substrate 3 or on the M plane of a GaN substrate 4. The growth surface of these gallium nitride semiconductor crystals 2 are not an N (nitrogen) polar face or a Ga polar face but are non-polar faces. This can decrease the strength of an electric field caused by spontaneous polarization and piezo polarization generated at the interface of GaN/AlGaN at the p side. Thus, carrier depletion can be avoided.
    Type: Grant
    Filed: November 29, 2006
    Date of Patent: January 18, 2011
    Assignee: ROHM Co., Ltd.
    Inventor: Ken Nakahara
  • Patent number: 7842531
    Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.
    Type: Grant
    Filed: March 5, 2009
    Date of Patent: November 30, 2010
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
  • Publication number: 20100295037
    Abstract: Disclosed herein is a thin film transistor including: a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer. The source electrode and the drain electrode are formed by use of iridium or iridium oxide.
    Type: Application
    Filed: March 29, 2010
    Publication date: November 25, 2010
    Applicant: Sony Corporation
    Inventor: Katsuyuki Hironaka
  • Patent number: 7834371
    Abstract: A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.
    Type: Grant
    Filed: February 3, 2008
    Date of Patent: November 16, 2010
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Michihiro Sano, Hiroyuki Kato, Naochika Horio
  • Publication number: 20100265978
    Abstract: The present invention is directed to photonic devices which emit or absorb light with a wavelength shorter than that GaN photonic devices can emit or absorb. The devices according to the present invention are formed using molybdenum oxide of a high purity as a light emitting region or a light absorbing region. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized. The devices according to the present invention can be formed at a temperature relating low such as 700° C.
    Type: Application
    Filed: June 24, 2010
    Publication date: October 21, 2010
    Inventor: Takashi KATODA
  • Publication number: 20100216271
    Abstract: Provided is a method for fabricating a light emitting device. The method comprises forming a gallium oxide layer, forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer, forming a conductive substrate on the second conductive type semiconductor layer, separating the gallium oxide layer, and forming a first electrode on the first conductive type semiconductor layer.
    Type: Application
    Filed: February 25, 2010
    Publication date: August 26, 2010
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Yong Tae Moon
  • Publication number: 20100155717
    Abstract: This invention provides an amorphous oxide semiconductor thin film, which is insoluble in a phosphoric acid-based etching solution and is soluble in an oxalic acid-based etching solution by optimizing the amounts of indium, tin, and zinc, a method of producing the amorphous oxide semiconductor thin film, etc. An image display device (1) comprises a glass substrate (10), a liquid crystal (40) as a light control element, a bottom gate-type thin film transistor (1) for driving the liquid crystal (40), a pixel electrode (30), and an opposing electrode (50). The amorphous oxide semiconductor thin film (2) in the bottom gate-type thin film transistor (1) has a carrier density of less than 10+18 cm?3, is insoluble in a phosphoric acid-based etching liquid, and is soluble in an oxalic acid-based etching liquid.
    Type: Application
    Filed: March 26, 2008
    Publication date: June 24, 2010
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Kazuyoshi Inoue
  • Publication number: 20100123165
    Abstract: A semiconductor material includes a matrix semiconductor includes constituent atoms bonded to each other into a tetrahedral bond structure, and a heteroatom Z doped to the matrix semiconductor, in which the heteroatom Z is inserted in a bond so as to form a bond-center structure with an stretched bond length, and the bond-center structure is contained in a proportion of 1% or more based on the heteroatom Z.
    Type: Application
    Filed: November 12, 2009
    Publication date: May 20, 2010
    Inventors: Kazushige Yamamoto, Tatsuo Shimizu
  • Patent number: 7696533
    Abstract: The invention relates to a structure usable in electronic, optical or optoelectronic engineering which comprises a substantially crystalline layer made of an alloy consisting of at least one element of the column II of the periodic elements system and/or at least one element of the column IV of the periodic elements system and of N2 (said alloy being noted N-IV-N2), wherein said structure also comprises an InN layer. A method for producing an indium nitride layer, a substrate forming plate and the use thereof for indium nitride growth are also disclosed.
    Type: Grant
    Filed: September 14, 2005
    Date of Patent: April 13, 2010
    Assignees: Centre National de la Recherche Scientifique (CNRS), Universite Montpellier II
    Inventors: Bernard Gil, Olivier Gérard Serge Briot, Sandra Ruffenach, Bénédicte Maleyre, Thierry Joseph Roland Cloitre, Roger-Louis Aulombard
  • Patent number: 7659557
    Abstract: The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
    Type: Grant
    Filed: May 17, 2007
    Date of Patent: February 9, 2010
    Assignee: Huga Optotech Inc.
    Inventors: Chiung-Chi Tsai, Tzong-Liang Tsai, Yu-Chu Li
  • Patent number: 7646024
    Abstract: A structure is disclosed that reduces the forward voltage across the interface between silicon carbide and Group III nitride layers. The structure includes a conductive silicon carbide substrate and a conductive layer of aluminum gallium nitride on the silicon carbide substrate. The aluminum gallium nitride layer has a mole fraction of aluminum that is sufficient to bring the conduction bands of the silicon carbide substrate and the aluminum gallium nitride into close proximity, but less than a mole fraction of aluminum that would render the aluminum gallium nitride layer resistive.
    Type: Grant
    Filed: August 18, 2006
    Date of Patent: January 12, 2010
    Assignee: Cree, Inc.
    Inventor: Adam William Saxler
  • Publication number: 20090294797
    Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
    Type: Application
    Filed: July 13, 2007
    Publication date: December 3, 2009
    Inventors: Naomi Anzue, Gaku Sugahara, Yoshiaki Hasegawa, Akihiko Ishibashi, Toshiya Yokogawa
  • Publication number: 20090134410
    Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.
    Type: Application
    Filed: November 21, 2008
    Publication date: May 28, 2009
    Inventors: Ho Sun Paek, Sung Nam Lee, Tan Sakong, Youn Joon Sung, In Hoe Hur
  • Publication number: 20090108449
    Abstract: A microelectronic device includes a non-polymeric substrate, an organic interlayer, and a indium tin oxide layer formed on the organic interlayer.
    Type: Application
    Filed: October 31, 2007
    Publication date: April 30, 2009
    Inventors: Chinmay Betrabet, Curt Lee Nelson
  • Publication number: 20080274572
    Abstract: A method of fabricating ultraviolet (UV) vertical light-emitting diode (VLED) structures composed of AlInGaN or AlGaN with increased crystalline quality and a faster growth rate when compared to conventional AlInGaN or AlGaN LED structures is provided. This may be accomplished by forming a sacrificial GaN layer above a carrier substrate, and then depositing the light-emitting diode (LED) stack above the sacrificial GaN layer. The sacrificial GaN layer may then be removed in subsequent processing steps.
    Type: Application
    Filed: May 4, 2007
    Publication date: November 6, 2008
    Inventor: CHUONG ANH TRAN
  • Publication number: 20080070337
    Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
    Type: Application
    Filed: November 2, 2007
    Publication date: March 20, 2008
    Applicant: Koha Co., Ltd.
    Inventors: Noboru Ichinose, Kiyoshi Shimamura, Yukio Kaneko, Encarnacion Villora, Kazuo Aoki
  • Publication number: 20080057609
    Abstract: An organic light emitting device having a cathode, an anode and an organic layer structure disposed between the cathode and the anode, the organic layer structure comprising a hole injection layer doped with a p-type dopant, a hole transport layer, an emissive layer and an electron transport layer doped with an n-type dopant, wherein all of the layers in the organic layer structure are substantially made from the same organic host material. In particular, the organic host material is a bipolar organic material such as a derivative of fused aromatic rings. The emissive layer can be doped with a fluorescent dye or a phosphorescent dye.
    Type: Application
    Filed: October 26, 2007
    Publication date: March 6, 2008
    Inventor: Shi-Hao Li
  • Patent number: 7282782
    Abstract: A semiconductor device can include a channel including a first binary oxide and a second binary oxide.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: October 16, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Randy L. Hoffman, Peter P. Mardilovich, Gregory S. Herman
  • Patent number: 7247889
    Abstract: III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.
    Type: Grant
    Filed: December 3, 2004
    Date of Patent: July 24, 2007
    Assignee: Nitronex Corporation
    Inventors: Allen W. Hanson, John Claassen Roberts, Edwin L. Piner, Pradeep Rajagopal
  • Patent number: 7208770
    Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer.
    Type: Grant
    Filed: February 16, 2005
    Date of Patent: April 24, 2007
    Assignee: Infinera Corporation
    Inventors: Fred A. Kish, Jr., Sheila Hurtt, Charles H. Joyner, Richard P. Schneider
  • Publication number: 20070051963
    Abstract: A light source is based on a combination of silicon and calcium fluoride (CaF2). The silicon and the calcium fluoride need not be pure, but may be doped, or even alloyed, to control their electrical and/or physical properties. Preferably, the light source employs interleaved portions, e.g., arranged as a multilayer structure, of silicon and calcium fluoride and operates using intersubband transitions in the conduction band so as to emit light in the near infrared spectral range. The light source may be arranged so as to form a quantum cascade laser, a ring resonator laser, a waveguide optical amplifier.
    Type: Application
    Filed: September 6, 2005
    Publication date: March 8, 2007
    Inventor: Yifan Chen
  • Publication number: 20070029556
    Abstract: A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants.
    Type: Application
    Filed: August 8, 2005
    Publication date: February 8, 2007
    Inventors: Wencheng Su, Franky So
  • Publication number: 20060157696
    Abstract: The present invention directed to photonic devices which emit or absorb light with a short wavelength formed using molybdenum oxide grown on substrates which consist of materials selected from element semiconductors, III-V or II-IV compound semiconductors, IV compound semiconductors, organic semiconductors, metal crystal and their derivatives or glasses. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized.
    Type: Application
    Filed: January 12, 2006
    Publication date: July 20, 2006
    Applicant: Takashi KATODA
    Inventor: Takashi Katoda