Abstract: One embodiment in accordance with the invention is an apparatus that can include a non-single crystal substrate and a nanowire grown from a surface of the non-single crystal substrate. Furthermore, the apparatus can also include an electrode coupled to the nanowire. It is noted that the nanowire can be electrically conductive and/or optically active.

Abstract: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

Abstract: A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

Abstract: An image sensor may comprise photodiodes on a semiconductor; color filters on the photodiodes; a planarization layer covering the color filters; and microlenses on the planarization layer, including alternate hydrophilic microlenses and hydrophobic microlenses contacting the edges of the hydrophilic microlenses, corresponding to respective color filters.

Abstract: A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

Abstract: A solar cell comprising at least one nanostructure-film electrode is discussed. The solar cell may further comprise a different conducting material, such as a conducting polymer, to fill pores in the nanostructure-film. Additionally or alternatively, the solar cell may comprise an electrode grid superimposed on the nanostructure-film. Likewise, the solar cell may have a single or multiple active layer(s), wherein nanostructure-film(s) may form at least semi-transparent anode(s) and/or cathode(s) through use of buffer layer(s).

Abstract: An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.

Abstract: An optical element according to the present invention is provided, which comprises an optical surface at a center portion thereof; and a spacer section having a predetermined thickness on an outer circumference side of the optical surface, in which a surface height of the spacer section is configured to be higher than a surface height of the optical surface.

Abstract: A particle based optical diode having at least two cavities or at least two regions of a single cavity, wherein the regions contain different types of particles.

Abstract: A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.

Abstract: An optical module has a circuit carrier, a housed semiconductor element placed on the circuit carrier, and a lens unit for projecting electromagnetic radiation onto the semiconductor element. The lens unit, which is constructed separate from the cased semiconductor element, preferably comprises a lens assembly formed of, for example, three lenses and of a diaphragm. The three lenses, optionally together with the diaphragm, are aligned in a well-defined manner due to their geometric design so that no additional optical adjustment is necessary. According to the invention, a support is formed, at least in sections, on the case of the semiconductor element, and the lens unit is placed thereon thus being supported. The concept is that by forming a support directly on the case of a cased semiconductor element even with classically cased semiconductor chips, it is possible to construct a camera module with which every mechanical focus setting can be eliminated.

Abstract: A sensing module comprises a carrier, a sensor, a substrate, and a plurality of chips. The carrier has a carrying surface and a back surface opposite to the carrying surface. The sensor and the substrate are disposed on the carrying surface and are electrically connected to the carrier respectively. The chips are disposed on the substrate and are electrically connected to the substrate respectively. The production cost of the sensing module is low.

Abstract: The present disclosure relates to the integration of optical spectroscopy onto a nanoresonator for a sensitive means of selectively monitoring biological molecules. An apparatus and a method are provided for making an apparatus that is a sensor in which both mass detection using a quartz nanoresonator and optical detection using SERS is integrated onto at least one chip, thereby providing redundancy in detection of a species.

Abstract: First and second optical semiconductor elements are respectively mounted on first and second mount beds. First and second lead terminals are respectively arranged around the first and the second mount beds. The second lead terminals extend along the first lead terminals. The first and second lead terminals are electrically connected to the first and second optical semiconductor elements through first and second connection conductors, respectively. The second mount bed is arranged at an interval from the first optical semiconductor element, and extends along the first mount bed. The second mount bed has a penetration hole at a portion corresponding to a light emitting or light receiving surface of the first optical semiconductor element. The second lead terminals are bent so as to be laminated on the first lead terminal. The second lead terminals are fixed to the first lead terminal at portions via insulating material.

Abstract: A semiconductor photodetector 10 has a first semiconductor substrate 1 that is of a first conductive type and a low resistivity and has a (111) front surface, and a second semiconductor substrate 2 that is of the first conductive type and a high resistivity, has a (100) front surface, and is adhered onto first semiconductor substrate 1. A semiconductor region 3 of a second conductive type is formed on the front surface side of second semiconductor substrate 2. A region of a periphery of semiconductor region 3 is etched until first semiconductor substrate 1 is exposed. A first electrode 1e and a second electrode 2e are electrically connected to the exposed front surface of first semiconductor substrate 1 and to semiconductor region 3, respectively.

Abstract: A metal pattern for a high frequency signal is patterned on a flexile substrate, and the flexile substrate is bent in such a way as to form a substantially right angle at a spot corresponding to an end of the metal pattern for the signal. And an end of the metal pattern is fixedly attached to a lead pin for signaling, attached to a stem, for electrical continuity, so as to be in a posture horizontal with each other. Meanwhile, a part of the lead pins attached to the stem, being in such a state as penetrated through respective holes provided in the flexible substrate, is fixedly attached to a part of metal patterns provided on the flexible substrate so as to ensure electrical continuity therebetween.

Abstract: The disclosed subject matter is directed to a reliable surface mount device using a ceramic package, and includes LED devices that are simply composed and incorporate the use of the surface mount device. The surface mount device can include a ceramic package, a semiconductor optical chip mounted in the package, two soldering pads electrically connected to the chip electrodes and at least one dummy soldering pad located on either side of the soldering pads. Thermal fatigue located at or in the soldering connections connecting the chip electrodes to a mounting board can be reduced because the distance between the soldering pads can be reduced. The dummy soldering pad that is electrically insulated can allow the device to maintain a desirable location with poise during the reflow soldering process that occurs during manufacture, and can also reduce shear stress present at the soldering connections.

Abstract: A light emitting apparatus includes a light emitting element formed on a surface of a substrate and a light receiving element formed on an area other than an area overlapping the light emitting element on the surface of the substrate, the light receiving element detecting light emitted from the light emitting element.

Abstract: There is provided an optical member 1 in which a fixation member 3 supporting the light emitting member 2 is fixed to a housing 5 supporting a light receiving member 4, so as to have clearances between the fixation member 3 and the housing 5, by photocurable resin 6 bridging the clearances, recesses 7 that adjoin positions where the photocurable resin 6 is deposited, that are opened so as to allow casting of light into the recesses 7, and that are to receive portions of the photocurable resin 6 are formed on the housing 5.

Abstract: An optical module includes: a base plate; a light emitting element mounted on the base plate; an integrated circuit element of the light receiving element built-in type mounted on the base plate by bonded wires and having a light receiving portion for receiving returning light originating from light emitted from the light emitting element; and a circuit board having a window for allowing light to pass therethrough and connected to the integrated circuit element in a state wherein the light receiving portion is exposed through the window.

Abstract: A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

Abstract: A reset transistor includes a floating diffusion region for detecting a charge, a junction region for draining the charge, a gate for controlling a transfer of the charge from the floating diffusion region to the junction region upon receipt of a reset signal, and a potential well incorporated underneath the gate.

Abstract: A multisurfaced microdevice system array is produced from a wafer formed of semiconductor substrate material. Sensing, controlling and actuating microdevices are fabricated at specific location on both sides of the wafer, and the wafer is diced. Each die thus created is then formed into a multisurfaced, multifaced structure having outer and inner faces. The multifaced structure and the microdevices form a standardized microdevice system, and cooperatively combined microdevice systems form a microdevice system array. Communication of energy and data to and between microdevices on each and other microdevice systems of the microdevice system array is provided by energy transferring devices including electric conductors for transferring electric energy, ultrasound emitters and receivers for transferring acoustic energy, and electromagnetic energy emitters and receivers for transferring electromagnetic energy.

Abstract: A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: An image display system and manufacturing method are disclosed. According to the present invention, the image display system comprises a substrate, a switching TFT, a driving TFT, a photo sensor and a capacitor. A buffer layer is formed on a substrate. A separation layer is formed in a first area for forming a switching TFT, but no heat sink layer is formed thereon. A heat sink layer is formed on a second area for forming the driving TFT, the photo sensor and the capacitor, and then, the separation layer is formed thereafter. The present invention can form poly silicon layers with different crystal grain sizes on the first area and on the second area in a single laser crystallization process by utilizing the heat sink phenomenon of ELA with or without the heat sink layer. Therefore, the image display system of the present invention can operate with good luminance uniformity.

Abstract: The invention relates to the collective fabrication of superposed microstructures, such as an integrated circuit and a protective cover. Individual structures each comprising superposed first and second elements are fabricated collectively. The first elements (for example, integrated circuit chips) are prepared on a first plate and the second elements (for example, transparent covers) are prepared on a second plate. The plates are bonded to each other over the major portion of their facing surfaces, but with no bonding of the defined zones in which there is no adhesion. The individual structures are then diced via the top on the one hand and via the bottom on the other hand along different parallel dicing lines passing through the zones with no adhesion, so that, after dicing, the first elements retain surface portions (those lying between the parallel dicing lines) that are not covered by a second element. A connection pad may thus remain accessible at this point.

Abstract: An integrated circuit includes a device stack including: a memory device with a first wireless coupling element, and a semiconductor device with a second wireless coupling element. The first and second wireless coupling elements are arranged face-to-face and are configured to provide a wireless connection between the memory device and the semiconductor device.

Abstract: Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed.

Abstract: A thin-film photodiode has a substrate, a thin-film element formed on the substrate and a micro lens formed above the thin-film element. The thin-film element includes a first semiconductor layer of p-type semiconductor formed on the substrate, a second semiconductor layer formed in contact with the first semiconductor layer on the substrate and formed of i-type semiconductor or p-type semiconductor having lower impurity concentration than the first semiconductor layer and a third semiconductor layer formed of an n-type semiconductor layer formed in contact with the second semiconductor layer on the substrate. The position of an optical axis center of the lens is set between a boundary between the second and third semiconductor layers and a lateral center of the second semiconductor layer.

Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Abstract: The present invention reduces the radiation noise and the degradation of the optical waveform appeared in the output of the laser module. The laser module of the present invention comprises the laser diode, the photodiode, and the resistor, which are mounted on the stem of the laser module. The stem includes four lead terminals, one of which is commonly connected to the laser diode ad the photodiode via the resistor. Therefore, the leak of the modulation current applied to the lead terminal, to which the laser diode and the photodiode are commonly connected, may be reduced.

Abstract: According to the present invention, a protective seal S1 for protecting a transparent member 11 is composed of an organic base 16, adhesive layers 17, and a second adhesive layer 18 having low adhesion. The adhesive layers 17 are provided only on edges corresponding, on the organic base 16, to sides 11b of the transparent member and the second adhesive layer 18 is provided on a portion corresponding, on the organic base 16, to a surface 11a of the transparent member. The organic base is fixed to the sides 11b and the surface 11a of the transparent member 11 with the adhesive layers 17 and 18.

Abstract: On-wafer test systems and methods for light-emitting devices, such as light-emitting diodes (LEDs), are provided. The test system may be designed, for example, to characterize the light output from the LED die (e.g., power in Lumens).

Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Abstract: Disclosed is a white light emitting diode possessing a phosphor layer to convert blue light into yellow light, provided on a blue light emitting diode, wherein the phosphor layer possesses an inorganic compound containing a phosphor, and particularly a white light emitting diode, wherein this inorganic compound is a phosphor. Also disclosed is a method of manufacturing a white light emitting diode, possessing a step of forming the foregoing phosphor layer made of an inorganic compound containing a phosphor via an aerosol deposition method. A white light emitting diode exhibiting high reliability and longer operating life, which is prepared via use of a blue LED element, can be provided by what is described above.

Abstract: An optical device includes a semiconductor substrate including a device region formed thereon, the device region including at least one of a light-receiving region and a light-emitting region; a light-transmissive flattening film covering the device region, and including a first concave portion located in a region on an outer side of the device region; a light-transmissive member formed on the light-transmissive flattening film; and a light-transmissive adhesive layer bonding together the light-transmissive flattening film and the light-transmissive member, and filling the first concave portion.

Abstract: A power generating black mask comprising an anti-reflection layer deposited over a substrate, a first electrode layer deposited over the anti-reflection layer, a semi-conductor layer deposited over the first electrode layer and a second electrode layer deposited over the semi-conductor layer.

Abstract: An optical module includes an image sensor having an active area and a window mounted directly to the image sensor above the active area. The optical module further includes a mount mounted to the window, the mount supporting a barrel having a lens assembly. By mounting the window directly to the image sensor and the mount directly to the window, the substrate surface area of the optical module is minimized.

Abstract: A light fixture, using one or more solid state light emitting elements utilizes a diffusely reflect chamber to provide a virtual source of uniform output light, at an aperture or at a downstream optical processing element of the system. Systems disclosed herein also include a detector, which detects electromagnetic energy from the area intended to be illuminated by the system, of a wavelength absent from a spectrum of the combined light system output. A system controller is responsive to the signal from the detector. The controller typically may control one or more aspects of operation of the solid state light emitter(s), such as system ON-OFF state or system output intensity or color. Examples are also discussed that use the detection signal for other purposes, e.g. to capture data that may be carried on electromagnetic energy of the wavelength sensed by the detector.

Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

Abstract: Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.

Abstract: Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed.

Abstract: There is provided a light emitting and image sensing device for a scene. The device is formed in a semiconductor substrate and comprises a photosensor component for sensing an image of the scene. The photosensor component is responsive to incident light from the scene and provides an electrical signal representative of the image. There is also a photoemitter component for emitting a light signal representative of the electrical signal, and a coupling component connecting the photosensor component with the photoemitter component.

Abstract: A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other.

Abstract: An article comprising an array of semiconductor nanocrystals arranged in a predetermined pattern, wherein the semiconductor nanocrystals are capable of generating light of one or more predetermined wavelengths in response to ambient light. In one embodiment the semiconductor nanocrystals emit light of different predetermined wavelengths.

Abstract: A light emitting device includes a substrate having transparency, a light emitting element that emits light at least to the substrate side, and a light detecting element that is formed between the light emitting element and the substrate. The light detecting element is formed along an outer frame of the light emitting element in a plan view.

Abstract: An optocoupler package is disclosed. The package includes a substrate comprising a substrate surface, a first device, and a clip structure attached to the first device. The clip structure and the first device are mounted on the substrate, and the first device is oriented at an angle with respect to the substrate surface. A second device is mounted on the substrate, where the first device is capable of communicating with the second device.

Abstract: This invention details how a low cost opto coupler can be made on Silicon On Insulator (SOI) using conventional integrated circuit processing methods. Specifically, metal and deposited insulating materials are use to realize a top reflector for directing light generated by a silicon PN junction diode to a silicon PN junction photo diode detector. The light generator or LED can be operated either in the avalanche mode or in the forward mode. Also, side reflectors are described as a means to contain the light to the LED-photo detector pair. Furthermore, a serpentine junction PN silicon LED is described for the avalanche mode of the silicon LED. For the forward mode, two LED structures are described in which hole and electrons combine in lightly doped regions away from heavily doped regions thereby increasing the LED conversion efficiency.

Abstract: A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.

Abstract: a photosensor structure; and switching means coupled between the photosensor structure and one of the plurality of signal lines, the switching means responsive to select signals on one or more of the plurality of select lines for conveying a photosensor signal between the photosensor structure and the one of the plurality of signal lines.