Insulated Gate Field-effect Transistor (epo) Patents (Class 257/E51.006)
  • Patent number: 10475826
    Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: November 12, 2019
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Shuo-Yang Sun, Yu-Hsing Liang, Wan-Chen Huang, Chun-Cheng Cheng
  • Patent number: 9024298
    Abstract: An encapsulation, barrier, or protective layer for electronic devices is disclosed comprising a lac-based material, its synthetic form and variant, or a combination thereof, which protects electronic devices from adverse environmental effects.
    Type: Grant
    Filed: July 26, 2005
    Date of Patent: May 5, 2015
    Assignee: Xerox Corporation
    Inventors: Mihaela Maria Birau, Yiliang Wu, Beng S Ong
  • Patent number: 8999776
    Abstract: Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: April 7, 2015
    Assignee: Sony Corporation
    Inventor: Akihiro Nomoto
  • Patent number: 9000523
    Abstract: An organic light-emitting display device including a TFT comprising an active layer, a gate electrode comprising a lower gate electrode and an upper gate electrode, and source and drain electrodes insulated from the gate electrode and contacting the active layer; an organic light-emitting device electrically connected to the TFT and comprising a pixel electrode formed in the same layer as where the lower gate electrode is formed; and a pad electrode electrically coupled to the TFT or the organic light emitting device and comprising a first pad electrode formed in the same layer as in which the lower gate electrode is formed, a second pad electrode formed in the same layer as in which the upper gate electrode is formed, and a third pad electrode comprising a transparent conductive oxide, the first, second, and third pad electrodes being sequentially stacked.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: April 7, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Hyun Choi, Jae-Hwan Oh
  • Patent number: 8975621
    Abstract: An organic light emitting display device includes a first substrate including a pixel area and a non-pixel area; a pixel array formed on the pixel area of the first substrate; a protective layer formed over the pixel array, and having a trench that exposes at least a portion of the non-pixel area; a second substrate disposed above the first substrate; a sealing material disposed between the second substrate and the protective layer at the outside of the trench; and a getter disposed between the second substrate and the first substrate exposed by the trench. Moisture and/or oxygen penetrated through the sealing material and the protective layer, which are disposed at a side of the organic light emitting display device, are absorbed into the getter, thereby improving the lifespan of the organic light emitting display device.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: March 10, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Young-Min Kim, Deok-Chan Yoon, Kie-Hyun Nam
  • Patent number: 8963147
    Abstract: A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same metal oxide material; and an insulating protective layer. The semiconductor region includes a region between the source electrode and the drain electrode, and is overlaid on a part of each of them. The semiconductor region is formed between the gate insulating layer and the insulating protective layer to abut on at least one of them. The electric conductivity of the semiconductor region is higher than that of the insulating region.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: February 24, 2015
    Assignee: Toppan Printing Co., Ltd.
    Inventors: Chihiro Imamura, Yukari Miyairi, Hiroaki Koyama
  • Patent number: 8963142
    Abstract: Provided is a photoelectric transducer having a photoelectric conversion material layer including an organic material with higher sensitivity and response than conventional one. The photoelectric transducer includes (a-1) first and second electrodes 21 and 22 separated from each other and (a-2) a photoelectric conversion material layer 30 provided between the first and second electrodes 21 and 22, wherein the photoelectric conversion material layer 30 includes an azo moiety-containing thiazole compound represented by the structural formula (1).
    Type: Grant
    Filed: April 25, 2011
    Date of Patent: February 24, 2015
    Assignee: Sony Corporation
    Inventors: Ayumi Nihei, Masaki Murata
  • Patent number: 8940562
    Abstract: The present disclosure provides the ability to produce backplanes for AMLCD and AMOLED. Specifically, each and every component of the backplanes can be printed. Depending on the resolution and screen size of the displays, backplanes can include over a million different components that must be printed that include components of the thin film transistor (TFT) and electrodes to address each of those TFTs. Even a slight misregistry of components during printing can lead to failure of one or more pixels, potentially rendering the entire display unsuitable for use. The present disclosure provides the ability to reproducibly and accurately print each and every component of the backplane for both AMLCD and AMOLED. The ability to completely print backplanes provides numerous advantages, such as reduced costs, improved throughput, more environmental friendliness, and the like.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: January 27, 2015
    Assignee: Atom Nanoelectronics, Inc
    Inventor: Huaping Li
  • Patent number: 8940235
    Abstract: A chemical sensor is disclosed. The chemical sensor is an electronic device including in specific embodiments a first transistor and a second transistor. The first transistor includes a semiconducting layer made of a first semiconductor and carbon nanotubes. The second transistor includes a semiconducting layer made of a second semiconductor, and does not contain carbon nanotubes. The two transistors vary in their response to chemical compounds, and the differing response can be used to determine the identity of certain chemical compounds. The chemical sensor can be useful as a disposable sensor for explosive compounds such as trinitrotoluene (TNT). The electronic device is used in conjunction with an analyzer that processes information generated by the electronic device.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: January 27, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yiliang Wu, Ping Liu, Anthony James Wigglesworth
  • Patent number: 8932913
    Abstract: To provide a semiconductor device which prevents defects and achieves miniaturization. A projecting portion or a trench (a groove portion) is formed in an insulating layer and a channel formation region of a semiconductor layer is provided in contact with the projecting portion or the trench, so that the channel formation region is extended in a direction perpendicular to a substrate. Thus, miniaturization of the transistor can be achieved and an effective channel length can be extended. In addition, before formation of the semiconductor layer, an upper-end corner portion of the projecting portion or the trench with which the semiconductor layer is in contact is subjected to round chamfering, so that a thin semiconductor layer can be formed with good coverage.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: January 13, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shinya Sasagawa, Akihiro Ishizuka
  • Patent number: 8927330
    Abstract: Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: January 6, 2015
    Assignee: E Ink Holdings Inc.
    Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Chun-Cheng Yeh, Liang-Hao Chen
  • Patent number: 8912535
    Abstract: The various inventions and/or their embodiments disclosed herein relate to certain naphthalene diimide (NDI) compounds wherein the NDI groups are bonded to certain subclasses of bridging heteroaryl (hAr) groups, such as the “NDI-hAr-NDI” oligomeric compounds, wherein hAr is a heteroaryl group chosen to provide desirable electronic and steric properties, and the possible identities of the “Rz” terminal peripheral substituent groups are described herein. Transistor and inverter devices can be prepared.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: December 16, 2014
    Assignee: Georgia Tech Research Corporation
    Inventors: Lauren E. Polander, Shree Prakash Tiwari, Seth Marder, Bernard Kippelen, Raghunath R. Dasari, Yulia A. Getmanenko, Do Kyung Hwang, Mathieu Fenoll
  • Patent number: 8901540
    Abstract: A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein R1 and R2, and R3 and R4 are respectively combined with each other to form an aromatic hydrocarbon ring having 6 to 60 carbon atoms or an aromatic heterocyclic ring having 3 to 60 carbon atoms; the ring being fused to the ring to which the groups are bonded, whereby the structure of the formula (1) has 5 or more aromatic rings that are fused; and the fused rings formed by R1 and R2, and R3 and R4 each may have a substituent.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: December 2, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Masatoshi Saito, Yuki Nakano, Hiroaki Nakamura, Hirofumi Kondo
  • Patent number: 8895692
    Abstract: It is an object of the present invention to provide a fused ring compound which can exhibit sufficient charge transport properties and which has excellent solubility in a solvent. The fused ring compound according to the present invention is represented by the following general formula (1), wherein R11 and R12 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group, an alkylthio group, an alkylamino group, an alkoxycarbonyl group, an optionally substituted aryl group having 6 to 60 carbon atoms, an optionally substituted heterocyclic group having 4 to 60 carbon atoms, or a cyano group, provided that at least one of R11 and R12 is not a hydrogen atom; R13 and R14 each independently represent a monovalent group, and n and m each independently denote an integer of 0 to 2; and Y11 and Y12 are each independently a divalent group comprising a sulfur atom, an oxygen atom, a nitrogen atom, a selenium atom or a tellurium atom.
    Type: Grant
    Filed: February 2, 2007
    Date of Patent: November 25, 2014
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Masahiro Miura, Tetsuya Satoh, Hiroyuki Watanabe, Masato Ueda
  • Patent number: 8884286
    Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: November 11, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yong-Su Lee, Su-Hyoung Kang, Yoon-Ho Khang, Hyun-Jae Na, Sang-Ho Park, Se-Hwan Yu, Myoung-Geun Cha
  • Patent number: 8872163
    Abstract: A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein R1 and R2, and R3 and R4 are respectively combined with each other to form an aromatic hydrocarbon ring having 6 to 60 carbon atoms or an aromatic heterocyclic ring having 3 to 60 carbon atoms; the ring being fused to the ring to which the groups are bonded, whereby the structure of the formula (1) has 5 or more aromatic rings that are fused; and the fused rings formed by R1 and R2, and R3 and R4 each may have a substituent.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: October 28, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Masatoshi Saito, Yuki Nakano, Hiroaki Nakamura, Hirofumi Kondo
  • Patent number: 8866132
    Abstract: Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: October 21, 2014
    Assignee: Sony Corporation
    Inventor: Akihiro Nomoto
  • Patent number: 8866233
    Abstract: An object is to provide a semiconductor device having a novel structure which includes a combination of semiconductor elements with different characteristics and is capable of realizing higher integration. A semiconductor device includes a first transistor, which includes a first channel formation region including a first semiconductor material, and a first gate electrode, and a second transistor, which includes one of a second source electrode and a second drain electrode combined with the first gate electrode, and a second channel formation region including a second semiconductor material and electrically connected to the second source electrode and the second drain electrode.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: October 21, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 8823105
    Abstract: There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is formed between the first electrode and the active layer and between the second electrode and the active layer, and the charge injection layer is formed of an organic material having an increased electric conductivity when the charge injection layer is oxidized.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: September 2, 2014
    Assignee: Sony Corporation
    Inventor: Mao Katsuhara
  • Patent number: 8816330
    Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: August 26, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Won Chung, Do-Hwan Kim, Bang Lin Lee, Jeong il Park, Yong Wan Jin, Sang Yoon Lee
  • Patent number: 8802491
    Abstract: There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is formed between the first electrode and the active layer and between the second electrode and the active layer, and the charge injection layer is formed of an organic material having an increased electric conductivity when the charge injection layer is oxidized.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: August 12, 2014
    Assignee: Sony Corporation
    Inventor: Mao Katsuhara
  • Patent number: 8803139
    Abstract: A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: August 12, 2014
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Kanan Puntambekar, Lisa Stecker, Kurt Ulmer
  • Patent number: 8785915
    Abstract: A compound for an organic thin film transistor represented by the following formula (1): wherein at least one pair of adjacent two groups of R1, R3, R5 and R7 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded; and at least one pair of adjacent two groups of R2, R4, R6 and R8 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded.
    Type: Grant
    Filed: August 28, 2009
    Date of Patent: July 22, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Yuki Nakano, Masatoshi Saito, Hiroaki Nakamura, Hirofumi Kondo
  • Patent number: 8759874
    Abstract: Despite improvements in FinFETs and strained silicon devices, transistors continue to suffer performance degradation as device dimensions shrink. These include, in particular, leakage of charge between the semiconducting channel and the substrate. An isolated channel FinFET device prevents channel-to-substrate leakage by inserting an insulating layer between the channel (fin) and the substrate. The insulating layer isolates the fin from the substrate both physically and electrically. To form the isolated FinFET device, an array of bi-layer fins can be grown epitaxially from the silicon surface, between nitride columns that provide localized insulation between adjacent fins. Then, the lower fin layer can be removed, while leaving the upper fin layer, thus yielding an interdigitated array of nitride columns and semiconducting fins suspended above the silicon surface. A resulting gap underneath the upper fin layer can then be filled in with oxide to isolate the array of fin channels from the substrate.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: June 24, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Prasanna Khare
  • Patent number: 8742656
    Abstract: An organic light emitting device and a method of manufacturing the same are disclosed. The organic light emitting device includes a substrate, a gate electrode on the substrate, a first insulating film insulating the gate electrode, a semiconductor layer positioned opposite to the gate electrode, a second insulating film insulating the semiconductor layer, source and drain electrodes connected to the semiconductor layer, a first electrode connected to one of the source and drain electrodes, a third insulating film including an opening that exposes the first electrode, a second electrode positioned opposite to the first electrode, and a light emitting layer positioned between the first electrode and the second electrode. A taper angle of an edge area of the third insulating film contacting the first electrode lies substantially in a range between 10° and 50°.
    Type: Grant
    Filed: January 16, 2008
    Date of Patent: June 3, 2014
    Assignee: LG Electronics Inc.
    Inventors: Hongki Park, Kyungtak Oh, Sammin Ko
  • Publication number: 20140124742
    Abstract: Multiple thin film transistors are aligned in serial and parallel orientation. A second source region is disposed between a first source region and a first drain region. A second drain region is disposed between the first source region and the first drain region. The second drain region and the second source region substantially coincide. A first gate is disposed between the first source region and the coinciding second source and second drain regions. A second gate region is disposed between the first drain region and the coinciding second source and second drain regions. An semiconductor is disposed between the first source region, the first drain region, and the coinciding second source and second drain regions. A dielectric material is disposed between the semiconductor substrate and the first and second gates.
    Type: Application
    Filed: November 8, 2012
    Publication date: May 8, 2014
    Applicant: PALO ALTO RESEARCH CENTER INCORPORATED
    Inventors: Tse Nga Ng, David Eric Schwartz, Janos Veres
  • Patent number: 8692255
    Abstract: A semiconductor element includes: an organic semiconductor layer; an electrode disposed on the organic semiconductor layer so as to be in contact with the organic semiconductor layer; and a wiring layer formed separately from the electrode and electrically connected to the electrode.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: April 8, 2014
    Assignee: Sony Corporation
    Inventors: Hideki Ono, Ryuto Akiyama
  • Patent number: 8691621
    Abstract: A method is provided for preparing a printed metal surface for the deposition of an organic semiconductor material. The method provides a substrate with a top surface, and a metal layer is formed overlying the substrate top surface. Simultaneous with a thermal treatment of the metal layer, the metal layer is exposed to a gaseous atmosphere with thiol molecules. In response to exposing the metal layer to the gaseous atmosphere with thiol molecules, the work function of the metal layer is increased. Subsequent to the thermal treatment, an organic semiconductor material is deposited overlying the metal layer. In one aspect, the metal layer is exposed to the gaseous atmosphere with thiol molecules by evaporating a liquid containing thiol molecules in an ambient air atmosphere. Alternatively, a delivery gas is passed through a liquid containing thiol molecules. An organic thin-film transistor (OTFT) and OTFT fabrication process are also provided.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: April 8, 2014
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Kurt Ulmer, Kanan Puntambekar
  • Patent number: 8674347
    Abstract: An organic thin-film transistor comprising a gate electrode, a gate insulator layer, an organic semiconductor layer, a source electrode and a drain electrode wherein the organic semiconductor layer consists of the organic semiconductor material having the structure represented by the general formula (1) shown below, and the organic semiconductor layer has crystallinity: wherein L represents a bivalent linker group having the structure consisting of one group or any combination of two or more groups selected from unsubstituted or fluorinated benzene residue, unsubstituted or fluorinated thiophene residue, unsubstituted or fluorinated thienothophene residue; R1 represents carbonyl group, cyano group or C1-C6 fluorinated alkyl group; R2 represents halogen atom, cyano group, carbonyl group or acetyl group.
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: March 18, 2014
    Assignee: Kyushu Institute of Technology
    Inventors: Shuichi Nagamatsu, Wataru Takashima, Tatsuo Okauchi, Tetsuji Moriguchi, Katsuhiro Mizoguchi, Keiichi Kaneto, Shuzi Hayase
  • Patent number: 8642379
    Abstract: A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: February 4, 2014
    Assignees: Cambridge Display Technology Limited, Panasonic Corporation
    Inventors: Sadayoshi Hotta, Jeremy Henley Burroughes, Gregory Lewis Whiting
  • Patent number: 8633484
    Abstract: An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer on the substrate; gate electrodes on the gate insulating layer and corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrode and being connected to the first semiconductor layer and the second semiconductor layer, respectively; an insulating layer on the substrate; a first electrode connected to the source/drain electrode electrically connected to the first semiconductor layer; an organic layer on the first electrode; and a second electrode on the organic layer, wherein portions of the buffer layer corresponding to a source/drain region of the first semiconductor layer include a metal catalyst.
    Type: Grant
    Filed: March 22, 2011
    Date of Patent: January 21, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Won-Kyu Lee, Tae-Hoon Yang, Bo-Kyung Choi, Byoung-Kwon Choo, Kyu-Sik Cho, Yong-Hwan Park, Sang-Ho Moon, Min-Chul Shin, Yun-Gyu Lee, Joon-Hoo Choi
  • Patent number: 8624304
    Abstract: A first patterned contact layer, for example a gate electrode, is formed over an insulative substrate. Insulating and functional layers are formed at least over the first patterned contact layer. A second patterned contact layer, for example source/drain electrodes, is formed over the functional layer. Insulative material is then selectively deposited over at least a portion of the second patterned contact layer to form first and second wall structures such that at least a portion of the second patterned contact layer is exposed, the first and second wall structures defining a well therebetween. Electrically conductive or semiconductive material is deposited within the well, for example by jet-printing, such that the first and second wall structures confine the conductive or semiconductive material and prevent spreading and electrical shorting to adjacent devices. The conductive or semiconductive material is in electrical contact with the exposed portion of the second patterned contact layer to form, e.g.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: January 7, 2014
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Jurgen H. Daniel, Ana Claudia Arias
  • Patent number: 8624330
    Abstract: A method and structures to achieve improved TFTs and high fill-factor pixel circuits are provided. This system relies on the fact that jet-printed lines have print accuracy, which means the location and the definition of the printed lines and dots is high. The edge of a printed line is well defined if the printing conditions are optimized. This technique utilizes the accurate definition and placement of the edges of printed lines of conductors and insulators to define small features and improved structures.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: January 7, 2014
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Jurgen H. Daniel, Ana Claudia Arias
  • Patent number: 8614474
    Abstract: The area C1 of the channel region of the drive TFT and the area C2 of the channel region of the memory TFT are set to have a relationship C1<C2 to an extent that allows predetermined hysteresis natures dependent on respective functions thereof.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: December 24, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Masahiro Tomida
  • Patent number: 8610124
    Abstract: A display device capable of implementing the light shielding effect and process simplification, and a method of manufacturing the display device. The display device includes a transistor formed in a first region on a substrate, a pixel electrode formed in a second region on the substrate, a buffer layer formed beneath the transistor in the first region, and a light shielding layer formed between the buffer layer and the substrate in the first region. In the display device, the light shielding layer may include a semiconductor material.
    Type: Grant
    Filed: April 5, 2011
    Date of Patent: December 17, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sung-In Ro, Ji-Yong Park, Kyung-Min Park, Seong-Yeun Kang, Jin-Suk Park
  • Patent number: 8604468
    Abstract: An organic light-emitting display apparatus including an active layer and a first insulating layer on a substrate; a gate electrode on first insulating layer and including a first transparent conductive layer and a first metal layer, a second insulating layer on the gate electrode and including contact holes exposing source and drain areas of the active layer; source and drain electrodes including a second metal layer in the contact holes and on the second insulating layer, a pixel electrode on the first insulating layer and including the first transparent conductive layer, a reflection layer, and a second transparent conductive layer, and a pixel-defining layer on the source and drain electrodes and exposing the pixel electrode. The pixel-defining layer covers upper edges of the first transparent conductive layer of the pixel electrode. The reflection layer and the second transparent conductive layer contact sides of the pixel-defining layer.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: December 10, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sung-Soo Choi, Jae-Beom Choi, Yeoung-Jin Chang, Jae-Hwan Oh, Seong-Hyun Jin
  • Patent number: 8574952
    Abstract: A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: November 5, 2013
    Assignee: Sony Corporation
    Inventor: Akihiro Nomoto
  • Patent number: 8569809
    Abstract: Sensor cells are arranged in an array in an organic semiconductor layer. Row and column select circuitry addresses the cells of the array one cell at a time to determine the presence of an object, such as a fingerprint ridge or valley, contacting or proximate to a sensing surface above each cell. Control circuitry can be provided in a companion silicon chip or in a second layer of organic semiconductor material to communicate with the array and an associated system processor. The array of sensor cells can be fabricated using a flexible polymer substrate that is peeled off and disposed of after contacts have been patterned on the organic semiconductor layer. The organic semiconductor layer can be used with a superimposed reactive interface layer to detect specific chemical substances in a test medium.
    Type: Grant
    Filed: October 13, 2006
    Date of Patent: October 29, 2013
    Assignee: STMicroelectronics, Inc.
    Inventors: Danielle A. Thomas, Bruno J. Debeurre, Peter J. Thoma
  • Patent number: 8569746
    Abstract: An organic field effect transistor including an organic semiconductor layer constituting a current path between a source electrode and a drain electrode wherein the organic semiconductor layer is made of a conjugated polymer having a depletion layer and a conductivity of the organic semiconductor layer is controlled by using a gate electrode, wherein the depletion layer is formed by joining a reductive material being capable of forming Schottky contact with the organic semiconductor layer made of the conjugated polymer. There can be provided an organic field effect transistor using a conjugated polymer as an organic semiconductor and being capable of maintaining an insulation property.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: October 29, 2013
    Assignee: Kyushu Institute of Technology
    Inventors: Shuichi Nagamatsu, Wataru Takashima, Keiichi Kaneto
  • Patent number: 8546803
    Abstract: In an organic light-emitting display having superior image quality and device reliability, and a related method of manufacturing the organic light-emitting display, the organic light-emitting display comprises: a gate electrode formed on a substrate; an interlayer insulating film formed on the substrate so as to cover the gate electrode; and a transparent electrode formed on the interlayer insulating film. The interlayer insulating film comprises multiple layers having different refractive indices.
    Type: Grant
    Filed: June 14, 2011
    Date of Patent: October 1, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Chun-Gi You, Joon-Hoo Choi
  • Patent number: 8541266
    Abstract: In a method for manufacturing a transistor including an oxide semiconductor layer, a gate electrode is formed and then an aluminum oxide film, a silicon oxide film, and the oxide semiconductor film are successively formed in an in-line apparatus without being exposed to the air and are subjected to heating and oxygen adding treatment in the in-line apparatus. Then, the transistor is covered with another aluminum oxide film and is subjected to heat treatment, so that the oxide semiconductor film from which impurities including hydrogen atoms are removed and including a region containing oxygen at an amount exceeding that in the stoichiometric composition ratio. The transistor including the oxide semiconductor film is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT test) can be reduced.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: September 24, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 8530886
    Abstract: A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: September 10, 2013
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Deborah A. Neumayer, Wenjuan Zhu
  • Patent number: 8519385
    Abstract: An organic light emitting diode (OLED) display according to an exemplary embodiment of the invention includes: a display substrate including a plurality of pixel areas; a tilt layer formed on the display substrate of each of the plurality of pixel areas, and having a tilt angle with respect to the display substrate; a first electrode formed on the tilt layer; an organic emission layer formed on the first electrode; a second electrode formed on the organic emission layer; an encapsulation substrate disposed on the second electrode and in parallel with the display substrate; and a prism sheet formed on the encapsulation substrate and having a plurality of prisms.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: August 27, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jae-Ik Lim, Yi-Joon Ahn, Gee-Bum Kim, Yong-Seok Yeo, Man-Seob Choi
  • Patent number: 8513653
    Abstract: An electronic device, a transparent display and methods for fabricating the same are provided, the electronic device including a first, a second and a third element each formed of a two-dimensional (2D) sheet material. The first, second, and third elements are stacked in a sequential order or in a reverse order. The second element is positioned between the first element and the third element. The second element has an insulator property, the first and third elements have a metal property or a semiconductor property.
    Type: Grant
    Filed: September 7, 2010
    Date of Patent: August 20, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yun-sung Woo, Sun-ae Seo, Dong-chul Kim, Hyun-jong Chung
  • Patent number: 8501530
    Abstract: It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: August 6, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shinobu Furukawa, Ryota Imahayashi
  • Publication number: 20130181192
    Abstract: An organic floating gate memory device having protein and a method of fabricating the same are disclosed.
    Type: Application
    Filed: August 13, 2012
    Publication date: July 18, 2013
    Inventors: Jenn-Chang HWANG, Li Shiuan TSAI, Jon-Yiew GAN
  • Publication number: 20130181191
    Abstract: An electronic device including a bio-polymer material and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate; a first electrode disposed on the substrate; a bio-polymer layer disposed on the first electrode, wherein the bio-polymeric material is selected from a group consisting of wool keratin, collagen hydrolysate, gelatin, whey protein and hydroxypropyl methylcellulose; and a second electrode disposed on the biopolymer material layer. The present invention is suitable for various electronic devices such as an organic thin film transistor, an organic floating gate memory, or a metal-insulator-metal capacitor.
    Type: Application
    Filed: June 1, 2012
    Publication date: July 18, 2013
    Inventors: Jenn-Chang Hwang, Chao-Ying Hsieh, Lung-Kai Mao, Chun-Yi Lee, Li-Shiuan Tsai, Cheng-Lung Tsai, Wei-Cheng Chung, Ping-Chiang Lyu
  • Patent number: 8482000
    Abstract: In one example embodiment, a molecular element is configured by bridging a gap between a source electrode and a drain electrode by a functional molecule. The functional molecule arises from covalent linkage of a side chain composed of a pendant molecule that has dielectric constant anisotropy and/or dipole moments and in which orientation change occurs due to an electric field to a main chain composed of a conjugated molecule in which structural change occurs due to the orientation change of the pendant molecule and an electrical characteristic changes. The molecular element is made to work as a diode, a transistor, or a memory by an electric field applied to the pendant molecule of the functional molecule by gate electrodes.
    Type: Grant
    Filed: September 1, 2009
    Date of Patent: July 9, 2013
    Assignee: Sony Corporation
    Inventor: Eriko Matsui
  • Patent number: 8480926
    Abstract: Disclosed is a visible light-transmissive liquid-crystalline compound having good hole and electron-transport characteristics and useful as an organic semiconductor material. The compound is represented by a formula (1): wherein R independently represents hydrogen, or alkyl having from 1 to 24 carbon atoms, and any —CH2— in the alkyl may be replaced by —O—, —S—, —CO— or —SiH2—, any —(CH2)2— may be replaced by —CH?CH— or —C?C—, and any hydrogen may be replaced by halogen; Ar represents naphthylene, anthrylene, phenanthrylene, or phenylene; and every hydrogen in phenylene is replaced by halogen, and any hydrogen in naphthylene, anthrylene and phenanthrylene may be replaced by halogen.
    Type: Grant
    Filed: July 4, 2011
    Date of Patent: July 9, 2013
    Assignee: JNC Corporation
    Inventors: Yasuyuki Sasada, Tetsuharu Miwa
  • Patent number: 8481360
    Abstract: This invention generally relates to organic electronic devices and to methods for their fabrication. More particularly we will describe organic thin film transistor (TFT) structures and their fabrication. An organic electronic device, the device comprising: a substrate supporting a first electrode; a spacer structure over said substrate; a second electrode over said spacer structure and at a height above said first electrode; and a layer of organic semiconducting material over said first and second electrodes to provide a conducting channel between said first and second electrodes; and wherein a majority of said first electrode is laterally positioned to one side of said channel and a majority of said second electrode is laterally positioned to the other side of said channel.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: July 9, 2013
    Assignee: Cambridge Display Technology Limited
    Inventors: Euan C. Smith, Gregory L. Whiting