Abstract: A microelectronic device, including: a substrate and a plurality of metal interconnection levels stacked on the substrate; a first metal line of a given metal interconnection level; a second metal line of another metal interconnection level located above the given metal interconnection level, the first and second lines are interconnected via at least one semiconductor connection element extending in a direction forming a nonzero angle with the first metal lines and the second metal line; and a gate electrode capable of controlling conduction of the semiconductor connection element.

Abstract: A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

Abstract: A composition comprising: at least one conjugated polymer, at least one second polymer comprising repeat units represented by: (I) optionally, —[CH2—CH(Ph-OH)]— and (II) —[CH2—CH(Ph-OR)]— wherein Ph is a phenyl ring and R comprises a fluorinated group, an alkyl group, an alkylsulfonic acid group, an alkylene oxide group, or a combination thereof is described. Other polymers can be used as second polymer including polymers comprising modified naphthol side groups. The composition can be used in hole injection and hole transport layers for organic electronic devices. Increased lifetime and better processability can be achieved. Versatility with useful OLED emitters can be achieved. Ink formulations can be adapted for ink jet printing. The conjugated polymer can be a polythiophene. Applications include OLEDs and OPVs.

Abstract: A reconfigurable device and a method of creating, erasing, or reconfiguring the device are provided. At an interface between a first insulating layer and a second insulating layer, an electrically conductive, quasi one- or zero-dimensional electron gas is present such that the interface presents an electrically conductive region that is non-volatile. The second insulating layer is of a thickness to allow metal-insulator transitions upon the application of a first external electric field. The electrically conductive region is subject to erasing upon application of a second external electric field.

Abstract: A reconfigurable device and a method of creating, erasing, or reconfiguring the device are provided. At an interface between a first insulating layer and a second insulating layer, an electrically conductive, quasi one- or zero-dimensional electron gas is present such that the interface presents an electrically conductive region that is non-volatile. The second insulating layer is of a thickness to allow metal-insulator transitions upon the application of a first external electric field. The electrically conductive region is subject to erasing upon application of a second external electric field.

Abstract: A patch clamp system providing precise and rapid temperature control of constrained cell membranes employs the thermal element attached to the substrate of the patch clamp. In one embodiment, the thermal element is a Peltier device fabricated on a silicon membrane wafer bonded to the substrate of the patch clamp.

Abstract: A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.

Abstract: The present invention provides a novel anthracene derivatives and an organic electronic device using the same. The organic electronic device according to the present invention shows excellent properties in terms of efficiency, a driving voltage, and a life span.

Abstract: A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.

Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the sec

Abstract: A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.

Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

Abstract: The present invention relates to methods for fabricating nanoscale electrodes separated by a nanogap, wherein the gap size may be controlled with high precision using a self-aligning aluminum oxide mask, such that the gap width depends upon the thickness of the aluminum oxide mask. The invention also provides methods for using the nanoscale electrodes.

Abstract: Disclosed are a biosensor, a method of producing the same, and a method of detecting a biomaterial through the biosensor. The biosensor includes a substrate, an insulating layer, source and drain electrodes formed on the insulating layer, a middle-discontinuous channel provided between the source and drain electrodes, and a detection area on which a detection target material is to be fixed, covering the middle-discontinuous channel.

Abstract: A semiconductor device is disclosed. The device includes: oppositely disposed plural electrodes; a semiconductor molecule disposed such that one end part thereof binds to a surface of the electrode in each of the opposing electrodes; and a conductor for electrically connecting at least a part of the other end part of the semiconductor molecule disposed in one electrode of the opposing electrodes to at least a part of the other end part of the semiconductor molecule disposed in the other electrode of the opposing electrodes. The conductivity between the opposing electrodes is substantially determined by the conductivity of the semiconductor molecule electrically connected to the conductor between the opposing electrodes in the semiconductor molecules.

Abstract: Devices, systems, and methods for detecting nucleic acid hybridization, including single nucleic base mutations at low concentrations, are disclosed, using capture units having nanoparticles with attached single-stranded oligonucleotides that are capable of hybridizing target oligonucleotides and reporter molecules having nanoparticles with attached single-stranded oligonucleotides, without the use of labeling or target modification.

Abstract: Memory device, comprising a storage material, a first electrode connected to the storage material; and a second electrode associated to the storage material.

Abstract: A molecular quantum interference device for use in molecular electronics. In one embodiment, the device includes a molecular quantum interference unit having a first terminal group and a second terminal group between which quantum interference affects electrical conduction, a molecular spacer having a first terminal group and a second terminal group and coupled to the molecular quantum interference unit through a chemical bonding between the first terminal group of the molecular spacer and the second terminal group of the molecular quantum interference unit, a first electrode electrically coupled to the molecular quantum interference unit and configured to supply charge carriers to or receive charge carriers from the molecular quantum interference unit, and a second electrode electrically coupled to the molecular spacer and configured to receive charge carriers from or supply charge carriers to the molecular spacer.

Abstract: An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer.

Abstract: A nanoscale device and a method for creating and erasing of nanoscale conducting regions at the interface between two insulating oxides SrTiO3 and LaAlO3 is provided. The method uses the tip of a conducting atomic force microscope to locally and reversibly switch between conducting and insulating states. This allows ultra-high density patterning of quasi zero or one dimensional electron gas conductive regions, such as nanowires and conducting quantum dots respectively. The patterned structures are stable at room temperature after removal of the external electric field.

Abstract: Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a PN junction of memory cell having a passive and active layer with asymmetric semiconducting properties. Such an arrangement reduces a number of transistor-type voltage controls and associated power consumption, while enabling individual memory cell programming as part of a passive array. Moreover, the system provides for an efficient placement of memory cells on a wafer surface, and increases an amount of die space available for circuit design.

Abstract: The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.

Abstract: A light emitting device includes a substrate layer, a first injection contact positioned over the substrate layer, a first dielectric layer positioned over the first injection contact, a light emission layer positioned over the first dielectric layer, a second dielectric layer positioned over the light emission layer and a second injection contact positioned over the second dielectric layer. The light emission layer includes an organic template having binding sites for binding nanoparticles into an array. The wavelength of emitted light is dependent upon the size of the nanoparticles and the pitch of the array. The light emitting device may include a first plurality of binding sites for binding a first set of nanoparticles and a second plurality of binding sites for binding a second set of nanoparticles. The wavelength depends upon a ratio of the first plurality to the second plurality of binding sites.

Abstract: The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.

Abstract: An electronic device comprising a polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: An object is to provide a higher-performance and higher-reliability memory device and a semiconductor device provided with the memory device at low cost and with high yield. A semiconductor device of the invention has a memory element including an insulating layer and an organic compound layer between first and second conductive layers. When melting, an organic compound of the organic compound layer aggregates due to surface tension of the organic compound. By applying a voltage to the first and second conductive layers, writing to the memory element is carried out.

Abstract: An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: A nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same are provided. The nonvolatile memory device may include a substrate, at least one first electrode on the substrate, first and second vertical walls on the at least one first electrode spaced from each other, a multiwall carbon nanotube on the at least one first electrode between the first and second vertical walls, second and third electrodes on the first and second vertical walls respectively and at least one fourth electrode spaced a variable distance D (where D?0) from the multiwall carbon nanotubes.

Abstract: A nanometric device is disclosed for the measurement of the electrical conductivity of individual molecules and their quantum effects having: a substrate surmounted by, in order, a barrier to diffusion layer, an electrically conductive layer, a “bounder” layer and an electrically insulating layer; and a suitable miniaturized probe; wherein the “bounder” layer and the electrically insulating layer have at least one nanometric pore formed within, the base of which consists of the electrically conductive layer. A method for the production of a nanometric device for the measurement of the electrical conductivity of individual molecules and their quantum effects, and a method for the measurement of the electrical conductivity and quantum effects of a molecule of interest, are also disclosed.

Abstract: A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer.

Abstract: The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.

Abstract: This invention provides an electrochemically active organic thin film capable of repeating reversible oxidation/reduction a number of times. Further, the invention provides a novel approach to so-called “molecular nanoelectronics” utilizing organic molecules as operating units, with the use of such organic thin film. Such electrochemically active organic thin film comprises a substrate, an organic molecular film comprising organic molecules having terminal amino groups chemically fixed on the surface of the substrate, and metal atoms or metal ions coordinately hound to the amino groups.

Abstract: Molecular systems are provided for electric field activated switches, such as a crossed-wire device or a pair of electrodes to which the molecular system is linked by linking moieties. The crossed-wire device comprises a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises the molecular system, which has an electric field induced band gap change, and thus a change in its electrical conductivity, that occurs via one of the following mechanisms: (1) molecular conformation change; (2) change of extended conjugation via chemical bonding change to change the band gap; or (3) molecular folding or stretching. Nanometer-scale reversible electronic switches are thus provided that can be assembled easily to make cross-bar circuits, which provide memory, logic, and communication functions.

Abstract: A colorant molecule is provided that includes at least one switch unit. The switch unit comprises ring-based tautomers, of which there may be more than one per chromophore, and may include donor and/or acceptor moieties.

Abstract: The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.

Abstract: A functional molecular device displaying its functions under the action of an electrical field is provided. A Louis base molecule, exhibiting positive dielectric constant anisotropy or exhibiting dipole moment along the long-axis direction of the Louis base molecule, is arrayed in the form of a pendant on an electrically conductive linear or film-shaped principal-axis molecule of a conjugated system, via a metal ion capable of acting as a Louis acid. The resulting structure is changed in conformation on application of an electrical field to exhibit its function. The electrically conductive linear or film-shaped principal-axis molecule and the Louis base molecule form a complex with the metal ion. On application of the electrical field, the Louis base molecule performs a swinging movement or a seesaw movement to switch the electrical conductivity of the principal-axis molecule.

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.

Abstract: Provided are a molecular electronic device including a functional molecular active layer having a stack structure including oppositely charged first and second molecular active layers, and a method of manufacturing the molecular electronic device. The molecular electronic device includes: a first electrode; an organic dielectric thin layer comprising molecules each having a first end self-assembled on a surface of the first electrode and a second end having a cationic or anionic group; a functional molecular active layer stacked on the organic dielectric thin layer by selective self-assembly with positive and negative ions and comprising an electroactive functional group having a cyclic compound; and a second electrode formed on the functional molecular active layer.

Abstract: A functional device which is composed of a nanometer-sized functional structure, which can reduce connection resistance in connecting the functional structure to an external electrode, and which includes a wiring section capable of minimizing constraints given to structural designs of various functional structures, and a method of manufacturing it are provided. A functional device in which a functional structure having contained sections in positions spaced from each other is retained by a carbon nanotube. A gap is formed in the carbon nanotube, and the carbon nanotube is segmented into a first carbon nanotube and a second carbon nanotube by the gap. One of the contained sections is contained in the first carbon nanotube at an opening of the first carbon nanotube facing the gap, and the other of the contained sections is contained in the second carbon nanotube at an opening of the second carbon nanotube facing the gap.

Abstract: According to some embodiments, an article of manufacture comprises a substrate; a molecular layer on the substrate comprising at least one charge storage molecule coupled to the substrate by a molecular linker; a solid barrier dielectric layer directly on the molecular layer; and a conductive layer directly on the solid barrier dielectric layer. In some embodiments, the solid barrier dielectric layer is configured to provide a voltage drop across the molecular layer that is greater than a voltage drop across the solid barrier dielectric layer when a voltage is applied to the conductive layer. In some embodiments, the molecular layer has a thickness greater than that of the solid barrier dielectric layer. The article of manufacture contains no electrolyte between the molecular layer and the conductive layer.

Abstract: A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.

Abstract: The present memory device includes first and second electrodes, an active layer and a passive layer, the active and passive layers being between the first and second electrodes, with either or both of the active layer and passive layer being made up a plurality of self-assembled sublayers.

Abstract: A functional molecular element with a reduced contact resistance between the constituting molecule and the electrode, a method for production thereof, and a functional molecular device are provided herein. The method consists of the following steps. A closely adhering molecular monolayer is formed on the surface of the electrodes from a ?-electron conjugated molecule (one species of linear tetrapyrrole) composed of the porphyrin-like nearly discoid skeleton and the flexible side chains (alkyl chains). A ?-electron conjugated molecule of the same species as the one or different species from the one is piled on the monolayer by ?-? stacking to form the array structure. As the result of the foregoing steps, the ?-electron conjugated molecule constituting the first molecular layer of the array structure takes on such a configuration that the flexible side chains adsorb to the surface of the electrode and the discoid skeleton orients parallel to and adheres to the surface of the electrode.

Abstract: In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top surface, (b) annealing the first metal electrode, (c) forming a SAM layer on a major surface of the first electrode, the SAM layer having a free surface such that the SAM is disposed between the free surface and the major surface of the first electrode, and (d) forming a second metal electrode on the free surface of the molecular layer. Forming step (d) includes the step of (d1) depositing the second metal electrode in at least two distinct depositions separated by an interruption period of time when essentially no deposition of the second metal takes place. SAM FETs fabricated using this method are also described.

Abstract: Provided is an electronic device, a field effect transistor having the electronic device, and a method of manufacturing the electronic device and the field effect transistor. The electronic device includes: a substrate; a first electrode and a second electrode which are formed in parallel to each other on the substrate, each of the first electrode and the second electrode comprising two electrode pads separated from each other and a heating element that connect the two electrode pads; a catalyst metal layer formed on the heating element of the first electrode; and a carbon nanotube connected to the second electrode by horizontally growing from the catalyst metal layer; wherein the heating elements are separated from the substrate by etching the substrate under the heating elements of the first and the second electrodes.

Abstract: Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a PN junction of memory cell having a passive and active layer with asymmetric semiconducting properties. Such an arrangement reduces a number of transistor-type voltage controls and associated power consumption, while enabling individual memory cell programming as part of a passive array. Moreover, the system provides for an efficient placement of memory cells on a wafer surface, and increases an amount of die space available for circuit design.

Abstract: Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an upper surface of the lower structure so as to contact the lower support structures. An upper structure is provided over the nanotube ribbon. The upper structure includes upper support structures and an upper electrically conductive element. In some arrangements, the upper and lower electrically conductive elements are in vertical alignment, but in some arrangements they are not.

Abstract: A functional molecular element whose functions can be controlled by an electric field based on a new principle. A Lewis base molecule (14) with positive permittivity anisotropy or a dipole moment in the major axis direction of the molecule is disposed, via a metal ion (3) that can act as a Lewis acid, in a pendant-like form on a key molecule (2) in the form of a line or film that has a conjugated system and exhibits conductivity, thereby forming a functional molecular element 1 that can realize a function where the conformation changes due to the application of an electric field. The conductive key molecule (2) and the Lewis base molecule (14) form a complex with the metal ion (3). When an electric field is applied in a direction perpendicular to the plane of the paper in FIG. 1(b), for example, the Lewis base molecule (14) performs a 90° “neck twisting” movement with the up-down direction in the drawing as the axis.

Abstract: Molecular memories, i.e., memories that incorporate molecules for charge storage, are disclosed. Molecular memory cells, molecular memory arrays, and electronic devices including molecular memory are also disclosed, as are processing systems and methods for manufacturing molecular memories. Methods of manufacturing molecular memories that enable semiconductor devices and interconnections to be manufactured monolithically with molecular memory are also disclosed.