Abstract: A light-emitting device including: a substrate; a light-emitting diode; and an optical resonance layer to resonate light emitted from the light-emitting diode. The optical resonance layer includes a first layer, including a polysilsesquioxane-based copolymer. A linking group connecting two different silicon (Si) atoms of the polysilsesquioxane-based copolymer can be —O—, or a substituted or unsubstituted C1-C30 alkylene group.

Abstract: An organic electroluminescent device including at least one organic layer between a pair of electrodes, wherein the at least one organic layer includes a luminescent layer, at least one layer of the at least one organic layer includes at least one metal complex containing a tri- or higher-dentate ligand, and a compound represented by formula (I) is contained in an organic layer containing the metal complex and/or in other organic layer(s). In formula (I), R11 to R14 each independently represent a hydrogen atom or a substituent group, and at least one of R11 to R14 represents an aryl or heteroaryl group.

Abstract: A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.

Abstract: A method of fabricating a circuit includes chemically bonding a coating to a plurality of nanoparticles. The nanoparticles are dispersed in a medium comprising organic molecules. An organic semiconductor channel is formed that comprises the medium. A plurality of electrodes is formed over the substrate. The electrodes are located to function as two of a gate electrode, a drain electrode, and a source electrode of a field-effect transistor.

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.

Abstract: Provided is an electroluminescent device which has a luminescent layer including quantum dots and which are excellent in life characteristics. An electroluminescent device (1) comprises a first electrode layer (3), a luminescent layer (4) formed on the first electrode layer, and a second electrode layer (5) formed on the luminescent layer. The luminescent layer uses quantum dots (12), each quantum dot being surrounded by silane coupling agent (11).

Abstract: There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.

Abstract: Disclosed is materials design for prolonging the duration of the low relative dielectric constant of an organic siloxane film having a low relative dielectric constant. Specifically, in an organic siloxane film having a relative dielectric constant of not more than 2.1, the elemental ratio of carbon to silicon in the film is set to not less than 0.10 and not more than 0.55.

Abstract: Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.

Abstract: Provided are an organic light emitting display device coupled to a photoelectric transistor. The organic light emitting display device includes an anode and a cathode separated from each other, a plurality of organic material layers formed between the anode and the cathode and including an organic light emitting layer, a light source applying an excitation pulse to the organic material layers, and a light receiving unit measuring changes in photoluminescence (PL) signals that are emitted from the organic material layers.

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.

Abstract: A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO2 and SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R1—X—R2 catalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R1—X—R2 catalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.

Abstract: There is provided an organic light emitting display device including a first substrate; an organic light emitting unit formed on the first substrate; a second substrate disposed on the organic light emitting unit; and an adhesive unit for adhering the first substrate and the second substrate to each other, wherein the adhesive unit includes a sealant, and particles that are arranged in the sealant so as to block penetration of external impurities. There is further provided a method of manufacturing the organic light emitting display device.

Abstract: The present invention provides a substrate with excellent thin line reproducibility and excellent adhesion with conductive wiring, a conductive pattern formation process employing the substrate and an organic thin film transistor employing the substrate. The substrate is characterized in that it has a sensitizing dye and a compound represented by the following formula (I): (R)n-—i(A)3-n-(B)??Formula (I) wherein R represents an alkyl group having a carbon atom number of not more than 8; A represents an alkoxy group or a halogen atom; B represents a substituent containing an SH group; and n is an integer of from 0 to 2.

Abstract: The invention relates to novel polyacene compounds, organic semiconducting formulations and layers comprising them, a process for preparing the formulation and layer and electronic devices, including organic field effect transistors (OFETs), comprising the same.

Abstract: A semiconductor device includes a substrate, a low dielectric constant layer formed on the substrate, a first protection insulating layer formed on the low dielectric constant layer, and a trench with an interconnect embedded in formed in the first protection insulating layer and the low dielectric constant layer. The sidewall of the trench has a structure that the surface of the first protection insulating layer protrudes from the surface of the low dielectric constant layer, a second protection insulating layer formed by a chemical vapor deposition technique is embedded at the surface of the low dielectric constant layer in an area below the first protection insulating layer, and the sidewall of the trench is constituted by the second protection insulating layer and the first protection insulating layer.

Abstract: A conducting polymer composition containing a siloxane material of Formula (1) below and a conducting polymer, and an electronic device including a layer formed using the conducting polymer composition: where A and a are the same as described in the detailed description of the invention. The electronic device including the layer formed using the conducting polymer composition has excellent electrical characteristics and long lifetime.

Abstract: The present invention aims at providing: a material for forming an adhesion reinforcing layer which can reinforce the adhesion between a low dielectric constant film, especially a low dielectric constant film containing an inorganic material, and other members; an adhesion reinforcing layer formed by the said material and exhibits superior adhesion; a fast and highly reliable semiconductor device having the adhesion reinforcing layer; and a manufacturing method thereof. The material for forming an adhesion reinforcing layer contains at least any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. The adhesion reinforcing layer is formed by the said material. The manufacturing method of a semiconductor device includes a process for forming a low dielectric constant film and, at least before or after the process for forming a low dielectric constant film, a process for forming an adhesion reinforcing layer with the said material.

Abstract: A silsesquioxane-based compound represented by Formula 1 and an organic light-emitting device including the same: wherein R1, R2, R3, R4, R5, R6, R7, and R8 are as defined in the specification. The use of the silsesquioxane-based compound enables to produce an organic light-emitting device with improvement in electrical characteristics such as brightness and efficiency. The silsesquioxane-based compound can exhibit good film smoothness and adhesion, and at the same time, good electrical characteristics such as current efficiency and brightness, and thus, is suitable for use in an organic light-emitting device.

Abstract: Provided are a silicon-containing compound having carbazole and fluorene in its molecule and an organic electroluminescent device including an organic layer employing the same. The silicon-containing compound is represented by the following formula: The silicon-containing compound has excellent electrical characteristics and a charge transporting capability, the silicon-containing compound can be used as a hole injecting material, a hole transporting material, and/or a light emitting material that are suitable for all-color fluorescent and phosphorescent organic light emitting devices such as red, green, blue, and white fluorescent and phosphorescent organic light emitting devices. When the silicon-containing compound is used to manufacture an organic electroluminescent device, the organic electroluminescent device has a high efficiency, a low driving voltage, high luminosity, and a long lifetime.

Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

Abstract: It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.

Abstract: A technique for high-resolution surface energy assisted patterning of semiconductor active layer islands on top of an array of predefined source-drain electrodes without requiring an additional process step for surface energy patterning.

Abstract: The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

Abstract: An OLED device comprises a cathode and an anode and has located therebetween a light-emitting layer comprising a phosphorescent light-emitting material and a host comprising a compound of a tetravalent atom wherein the four groups bonded to the atom are aromatic rings, at least one of which contains an electron-withdrawing group (EWG) substituent comprising at least three atoms, the compound having a triplet energy of at least 2.7 eV and a LUMO energy within 0.6 eV of the LUMO energy of at least one material in an adjacent layer on the cathode side of the light-emitting layer. Particular embodiments include certain tetravalent silicon compounds. The light-emitting layer emits blue light and provides good luminance and reduced drive voltage.

Abstract: The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiO2 thin films formed by coating as a sealing layer and a gate insulating layer, and a process for producing the same. The present invention provides a field-effect type thin film transistor having an active layer of an organic semiconductor, comprising on a plastic substrate, a sealing layer of a SiO2 thin film formed by coating; a gate electrode; a gate insulating layer of a SiO2 thin film formed by coating; gate and drain electrodes; and a semiconductor active layer. The high-quality SiO2 thin film is obtained by using a silicon compound as a starting material and irradiating a coated thin film of the solution of the starting material with light in an oxygen atmosphere.

Abstract: Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 ? to 1 ?m. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.

Abstract: An organic electroluminescence element, which contains at least one organic layer that includes a luminescent layer between a pair of electrodes, wherein the organic layer contains at least one compound represented by formula (1): wherein R11 and R12 each independently represent an aryl or heteroaryl group; when R11 or R12 is a phenyl group, it has no nitrogen-containing heterocyclic group on R11 or R12 as a substituent; Ar11 and Ar12 each independently represent a group represented by formula (2): wherein Ar21 represents an arylene or heteroarylene group; R21, R22, R23, and R24 each independently represent a substituent or a hydrogen atom; L2 represents a substituted or unsubstituted o-arylene or vinylene group, —NR— (R represents a substituent), —O—, or —S—; and m is 0 or 1.

Abstract: Hole transport layer compositions comprising a silylated aryl amine and a polymeric component, to enhance performance of an associated electroluminescent device.

Abstract: A MEMS system, such as a biosensor, includes a micromechanical resonator and a piezoresistive sensing element which includes an organic semiconductor, such as an organic thin film transistor.

Abstract: A 4,4?-Bis(carbazol-9-yl)-biphenyl (CBP) based silicone compound and an organic electroluminescent device using the CBP based silicon compound have excellent blue light emission characteristics and hole transfer capability. The CBP based silicon compound may be used as a blue light emission material or as a host material for various phosphorescent or fluorescent dopants emitting red, green, blue, or white light. Therefore, the organic electroluminescent device using the CBP based silicon compound has excellent characteristics such as a high efficiency, a high luminance, a long life span, and a low power consumption.

Abstract: Novel silylethynylated heteroacenes and electronic devices made with those compounds are disclosed.

Abstract: A method of manufacturing a donor sheet for transferring a transfer layer having a prescribed shape onto a receiving substrate, wherein: a step for forming an organic semiconductor precursor wherein a solution in which the organic semiconductor precursor which converts to an organic semiconductor due to heat, is coated on a substrate sheet; a step for forming a transfer layer of a prescribed shape by heating the organic semiconductor precursor layer in the prescribed shape to convert the organic semiconductor precursor layer to the organic semiconductor; and a step for removing the organic semiconductor precursor that is not converted to the organic semiconductor are performed in that order.

Abstract: A spirofluorene-type of a blue light-emitting polymer including an indenofluorene repeating unit having a spiroanthracene structure, and an organic electroluminescent display using the polymer. The brightness and efficiency property of the organic electroluminescent display are improved.

Abstract: A spiro-based compound containing cyclopentaphenanthrene and fluorene, which is used for an organoelectroluminescent device and an organoelectroluminescent device having the spiro-based compound. The spiro-based compound containing cyclopentaphenanthrene and fluorene can be easily manufactured to have high solubility, high color purity, and good thermal stability. The spiro-based compound containing cyclopentaphenanthrene and fluorene is suitable as a substance for an organic film, in particular, an emission layer of an organoelectroluminescent device. Further, the spiro-based compound containing cyclopentaphenanthrene and fluorene can be used as an organic dye, or an electron material such as a non-linear optical material.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: This invention is about anthracene, at least one having silyl substituted group on ring 9 and 10, the anthracene can be a organic light emitting diodes (OLED) material and used for organic electroluminescent device. wherein X is an triarylsilyl group having 6 to 20 carbon atoms, an trialkylsilyl group having 1 to 12 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, a substituted or unsubstituted heteroaryl group having 2 to 20 carbon atoms, or a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms. R1 and R2 is independently a hydrogen, halogen, or a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms. R3 to R5 is independently a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms.

Abstract: The tetraphenylsilane-carbazole compound of this invention has the following general formula: wherein R1 and R2 are H, halogen or carbazole having the formula of with at least one of R1 and R2 being carbazole; n=1, 2, 3 or 4; and wherein Si and N substituents are in meta positions on the benzene ring; or wherein R3, R4, R5 and R6 are H, halogen or tetraphenylsilane having the formula of with at least one of R3, R4, R5 and R6 being tetraphenylsilane; and wherein Si and N substituents are in meta positions on the benzene ring. The invented tetraphenylsilane-carbazole compounds are prepared by mixing selected tetraphenylsilane with carbazole in the existence of additives and reacting them under heated conditions, or by mixing selected carbazole with butyl metallic and reacting them under relatively lower temperature. The products may be used as host material for dopants for organic light emitting diode (OLED).

Abstract: This invention relates to electroluminescent silylated pyrene compounds. It also relates to electronic devices in which the active layer includes an electroluminescent silylated pyrene compound.

Abstract: The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp with a metal layer and forming an attached layer of anchored molecules by coupling first ends of the anchored molecules to a conductive or semiconductive substrate. The process also includes placing the metal layer in contact with the attached layer of anchored molecules such that the metal layer chemically bonds to free ends of the anchored molecules. The resulting devices produced have superior reliability as compared to conventional prepared devices.

Abstract: A method for forming an electronic device on a substrate, the device including a first electrically conductive region, a second electrically conductive region spaced from the first electrically conductive region and a region of an semiconductor material between the first and second electrically conductive regions and in contact with the first electrically conductive region, the method comprising doping an interfacial zone comprising least part of the periphery of the semiconductor material at the interface between the semiconductor material and the first electrically conductive region by means of a dopant contained in the first conductive material and capable of doping the semiconducting material so as to thereby enhance the conductivity of the interfacial zone.