Abstract: A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.

Abstract: A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.

Abstract: A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.

Abstract: Methods for improving the antibacterial, osteoconductive, and/or osteoinductive characteristics of silicon nitride and/or other ceramic materials, particularly to make them more suitable for use in manufacturing biomedical implants. In some embodiments and implementations, the surface chemistry and/or morphology of a silicon nitride bioceramic may be modulated significantly through thermal, chemical, and/or mechanical treatments to achieve such advantageous results. A portion of the resulting material, such as a glaze or upper layer of the material, may be separately produced as a powder or frit, for example, and used in manufacturing biomedical implants and/or other products, such as by using such portion of the material as a coating or filler. In other embodiments the surface material may be separately manufactured as a silicon oxynitride monolith.

Abstract: The present invention relates to extrudable ceramic masses and other masses which set as a result of baking or sintering, which masses comprise specific additives based on water-soluble cellulose ethers, an extrusion process, the extrudates and their use.

Abstract: Lasing systems utilizing YAG and methods for producing a YAG suitable for lasing are provided. The lasing system comprises a laser activator and a laser host material is provided. The laser host material comprises a transparent polycrystalline yttrium aluminum garnet material defined by a low porosity of less than about 3 ppm.

Abstract: The invention provides porous silicon nitride ceramics that having uniform, fine closed pores and a manufacturing method thereof. Metal Si powder is mixed with a sintering additive, followed by thermal treatment, which is a pre-process for forming a specific grain boundary phase. Two-stage thermal treatment is thereafter performed by microwave heating at a temperature of 1000° C. or more. The metal Si powder is thereafter subjected to a nitriding reaction from its surface, the metal Si is thereafter diffused to nitride formed on the outer shell thereof such that porous silicon nitride ceramics having uniform, fine closed pores can be produced. Having a high ratio of closed pores and being superior in electrical/mechanical characteristics, the porous silicon nitride ceramics can display excellent characteristics if used, for example, for an electronic circuit board that requires an anti-hygroscopicity, a low dielectric constant, a low dielectric loss, and mechanical strength.

Abstract: A ceramic material suitable for use in production of paving tiles, construction tiles, flooring in offices, flooring in machinery plants and so forth is obtained by a method comprising steps of mixing defatted bran derived from rice bran with a thermosetting resin before kneading, subjecting a kneaded mixture thus obtained to a primary firing in an inert gas at a temperature in a range of 700 to 1000° C., pulverizing the kneaded mixture after the primary firing into carbonized powders, kneading the carbonized powders with which ceramic powders, a solvent, and a binder as desired are mixed into a plastic workpiece (kneaded mass), pressure-forming the plastic workpiece at pressure in a range of 10 to 100 MPa, and subjecting a formed plastic workpiece thus obtained again to firing in an inert gas atmosphere at a temperature in a range of 100 to 1400° C.

Abstract: A process for making a heat treated ground ceramic cutting tool and the resultant cutting tool. The process comprising the steps of: providing an uncoated ground ceramic cutting tool having at least a portion thereof ground; and heat treating the uncoated ground ceramic cutting tool so as to form the heat treated ground ceramic cutting tool.

Abstract: A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.

Abstract: A process for making a heat treated ground ceramic cutting tool and the resultant cutting tool. The process comprising the steps of: providing an uncoated ground ceramic cutting tool having at least a portion thereof ground; and heat treating the uncoated ground ceramic cutting tool so as to form the heat treated ground ceramic cutting tool.

Abstract: A sintered ceramic part to be exposed to a corrosive gas, a surface of said ceramic part being machined, wherein each of grains exposed to the machined surface of the ceramic part is formed with a machined surface, and en edge of the machined surface of each of these grains is made round by material transfer. A process for producing such a sintered ceramic part includes the steps of: obtaining a machined body having a given shape by at least grinding a surface of a ceramic sintered body, and annealing the machined body.

Abstract: Provided with a method for preparing a silicon nitride ceramic with high strength and toughness including: mixing 0.2-0.9 wt % of carbon (C) powder with silicon nitride powder containing 5.0-6.0 wt % of yttria (Y2O3) and 1.0-2.0 wt % of alumina (Al2O3) added thereto as a sintering agent, and preparing a molding; subjecting the molding to a carbothermal reduction treatment at 1400-1500° C.; and gas pressure sintering the molding at a temperature above 1850° C. after the carbothermal reduction treatment.

Abstract: The present invention relates to a method for sintering of a silicon nitride based material using gas pressure sintering technique. It has been found that using a sintering atmosphere containing nitrogen and 0.1-10 vol-% carbon monoxide a cutting tool material is obtained with improved properties, particularly increased edge toughness, when machining heat resistant alloys.

Abstract: This invention relates to a method of joining silicon nitride having on its surface a thin layer of active silicon metal to carbon steel, wherein the active silicon layer is formed through the thermal dissociation of silicon nitride(Si3N4) into silicon(Si) and nitrogen gas(N2). The active silicon layer is directly joined to carbon steel via an induced eutectic melting reaction between the silicon (Si) an iron (Fe) of carbon steel, or via brazing of two materials Ag—Cu alloys. This joining process does not require the use of expensive Ag—Cu—Ti active brazing alloys containing an active metal (Ti) or a sputtering method designed to coat the active metals on surface of silicon nitride.

Abstract: The present invention provides a silicon nitride sintered body having characteristics such as excellent wear resistance, a method for manufacturing the sintered body, and a cutting insert formed thereof. The silicon nitride sintered body is formed of a polycrystalline sintered body of predominantly .beta.-Si.sub.3 N.sub.4, wherein the oxygen content is 1.2-1.5 wt. %. The method for manufacturing the silicon nitride sintered body includes the following steps: adding an organic binder to a composition containing silicon nitride as an essential component and exhibiting a theoretical oxygen content of 2.0-3.0 wt. %; heating to remove the binder; introducing an oxygen-containing gas so as to control the carbon content to 0.10-0.60 wt. %; and sintering a resultant compact in an nitrogen atmosphere to control the oxygen content to 1.2-1.5 wt. %. The cutting insert of the present invention has excellent wear resistance.

Abstract: A silicon nitride sintered material includes silicon nitride and rare earth element compounds. Y and Yb are contained as the rare earth elements in a total amount of 5-7 mole % in terms of oxides, Yb/Y is 4/6 to 9/1 in terms of molar ratio of oxides, and the crystal phases of grain boundary contain a H phase and a J phase with the proportion of the H phase being larger than that of the J phase. A process for producing a silicon nitride sintered material includes the steps of mixing a Si.sub.3 N.sub.4 powder with Y.sub.2 O.sub.3 and Yb.sub.2 O.sub.3 both as a sintering aid, the total amount of Y.sub.2 O.sub.3 and Yb.sub.2 O.sub.3 being 5-7 mole % and the molar ratio of Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 being 4/6 to 9/1, molding the resulting mixture, sintering the molded material in a nitrogen atmosphere at 1,850-1,950.degree. C., and heat-treating the sintered material in air at 1,000-1,500.degree. C. for 0.5-10 hours.

Abstract: A silicon nitride ceramic sliding material comprising silicon nitride crystal grains and a grain boundary phase and having a porosity of 2 to 10% and a maximum pore size of 20 to 100 .mu.m. The silicon nitride ceramic sliding material preferably has a textural structure wherein the proportion of the total area of silicon nitride crystal grains of 0.1 to 10 .mu.m.sup.2 in area to the total area of all the silicon nitride crystal grains present in an arbitrary two-dimensional cross section is 30 to 90% and the proportion of the number of silicon nitride crystal grains of 2 to 10 in aspect ratio to the number of all the silicon nitride crystal grains present in that cross section is at least 20%. The material is produced by mixing a silicon nitride powder with a sintering aid powder, molding the resulting mixture, then heat-treating the resulting molded body in a nitrogen-containing atmosphere under reduced pressure at 1,000 to 1,500.degree. C.

Abstract: The present invention provides silicon nitride ceramics having high thermal conductivity and a method for production thereof. This invention relates to a method for producing a silicon nitride sintered body having a microstructure with silicon nitride crystals oriented uniaxially and exhibiting high thermal conductivity of 100 to 150 W/mK in the direction parallel to the orientation direction of the crystals, which comprises of preparing a slurry by mixing a mixed powder of a sintering auxiliary, beta-silicon nitride single crystals as seed crystals and a silicon nitride raw powder with a dispersing medium, forming the slurry by tape casting or extrusion forming, calcining the formed silicon nitride body with beta-silicon nitride single crystals oriented parallel to the casting plane to remove the organic components, densifying it by hot pressing and the like if required, and further annealing it at 1700 to 2000.degree. C. under the nitrogen pressure of 1 to 100 atmospheres.

Abstract: A process for the production of a silicon nitride sintered body which comprises heat-treating a stock of silicon nitride sintered body within a temperature range of from the temperature at which the internal friction of the stock exhibits a peculiar peak maximum minus 150.degree. C. to that plus 150.degree. C. A representative used in the process is one which is produced by mixing powdered silicon nitride with powdery sintering aids so as to give a powder mixture comprising 5 to 15% by weight (in terms of oxide) of at least one element selected from the group consisting of rare earth elements and aluminum, 0.5 to 5% by weight (in terms of oxide) of at least one element selected from the group consisting of Mg, Ti and Ca and the balance of Si.sub.3 N.sub.4, molding the powder mixture, and sintering the resulting compact in a nitrogen-containing atmosphere at 1500.degree. to 1700.degree. C.

Abstract: There are provided a process for forming a silicon nitride sintered body, encompassing a sialon sintered body, by making much of the superplasticity of the sintered body intact as a simple material without formation thereof into a composite material, and a formed sintered body produced by the foregoing process. A silicon nitride sintered body (encompassing a sialon sintered body) having a relative density of at least 95% and a linear density of 120 to 250 in terms of the number of grains per 50 .mu.m in length in a two-dimensional cross section of the sintered body is formed through plastic deformation thereof at a strain rate of at most 10.sup.-1 /sec under a tensile or compressive pressure at a temperature of 1,300 to 1,700.degree. C. The formed sintered body has a degree of orientation of 5 to 80% as examined according to a method specified by Saltykov, a linear density of 80 to 200, and excellent mechanical properties especially at ordinary temperatures.

Abstract: A process is proposed for producing non-oxidic ceramic having a thermal conductivity in a predetermined range. A shaped body of non-oxidic ceramic material is heated to remove organic constituents, and is subsequently thermally treated in an oxygen-containing atmosphere to incorporate oxygen atoms into the crystal lattice of the non-oxidic ceramic, with the temperature and/or the hold time at this temperature being selected as a function of the predetermined thermal conductivity range, and the shaped body is finally sintered in a non-oxidizing atmosphere.

Abstract: The invention reduces the time required for nitriding in the process of reaction sintering for production of a sintered body of silicon nitride, thereby improving productivity, and provides a sintered body of silicon nitride having sufficient compactness and high strength which can be produced by reaction sintering. The sintered body is Si.sub.3 N.sub.4 having an unpaired electron density of 10.sup.15 /cm.sup.3 to 10.sup.21 /cm.sup.3. The sintered body is produced through reaction sintering by using a Si powder having an unpaired electron density of 10.sup.15 -10.sup.20 /cm.sup.3, which is obtained by annealing a commercially available Si powder at temperatures of 300.degree. to 800.degree. C. in other than nitrogen atmosphere for 3-5 hours.

Abstract: A sintered silicon nitride-based body comprising 20% or less by weight of a grain boundary phase and the balance being a major phase of grains of silicon nitride and/or sialon, wherein the major phase contains a grain phase of a .beta.-Si.sub.3 N.sub.4 phase and/or a .beta.'-sialon phase, and a quantitative ratio of the grain phase of the .beta.-Si.sub.3 N.sub.4 phase and/or the .beta.'-sialon phase is in a range of 0.5 to 1.0 relative to the major phase; the grain boundary phase contains Re.sub.2 Si.sub.2 O.sub.7 (wherein Re represents a rare-earth element other than Er and Yb) as a first crystal component and at least one of ReSiNO.sub.2, Re.sub.3 Al.sub.5 O.sub.12, ReAlO.sub.3, and Si.sub.3 N.sub.4.Y.sub.2 O.sub.3 as a second crystal component; and a quantitative ratio of the first and second crystal components in the grain boundary phase to the grain phase of .beta.-Si.sub.3 N.sub.4 phase and/or the .beta.'-sialon phase ranges from 0.03 to 1.6.