Discharge Control Electrode Patents (Class 313/308)
  • Patent number: 6476548
    Abstract: A display includes a substrate and an emitter formed on the substrate. A first dielectric layer is formed on the substrate to have a thickness slightly less than a height of the emitter above the planar surface and includes an opening formed about the emitter. The display also includes a conductive extraction grid formed on the first dielectric layer. The extraction grid includes an opening surrounding the emitter. The display further includes a second dielectric layer formed on the extraction grid and a focusing electrode formed on the second dielectric layer. The focusing electrode is electrically coupled to the emitter through an impedance element. The focusing electrode includes an opening formed above the apex. The focusing electrode provides enhanced focusing performance together with reduced circuit complexity, resulting in a superior display.
    Type: Grant
    Filed: July 23, 2001
    Date of Patent: November 5, 2002
    Assignee: Micron Technology, Inc.
    Inventor: Zhongyi Xia
  • Patent number: 6441543
    Abstract: A plurality of field emission device cathodes each generate emission of electrons, which are then controlled and focused using various electrodes to produce an electron beam. Horizontal and vertical deflection techniques, similar to those used within a cathode ray tube, operate to scan the individual electron beams onto portions of a phosphor screen in order to generate images. The use of the plurality of field emission cathodes provides for a flatter screen depth than possible with a typical cathode ray tube.
    Type: Grant
    Filed: January 30, 1998
    Date of Patent: August 27, 2002
    Assignee: SI Diamond Technology, Inc.
    Inventors: Zvi Yaniv, Ronald Charles Robinder
  • Patent number: 6441550
    Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a carbon-based body to a thickness greater than 20 micrometers, subsequently removing the substrate and then applying an electrical contact to one surface of the body. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the carbon-based body to produce a patterned surface on the field emission device after the substrate is removed.
    Type: Grant
    Filed: October 12, 1998
    Date of Patent: August 27, 2002
    Assignee: Extreme Devices Inc.
    Inventors: Donald E. Patterson, Keith D. Jamison
  • Patent number: 6420726
    Abstract: A triode field emission device using a field emission material and a driving method thereof are provided. In this device, gate electrodes serving to take electrons out of a field emission material on cathodes are installed on a substrate below the cathodes, so that the manufacture of the device is easy. Also, electrons emitted from the field emission material are controlled by controlling gate voltage.
    Type: Grant
    Filed: December 28, 2000
    Date of Patent: July 16, 2002
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Yong-soo Choi, Jun-hee Choi, Nae-sung Lee, Jong-min Kim
  • Patent number: 6384541
    Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: May 7, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshikazu Ohnishi, Masato Yamanobe, Ichiro Nomura, Hidetoshi Suzuki, Yoshikazu Banno, Takeo Ono, Masanori Mitome
  • Patent number: 6313572
    Abstract: The present invention provides an electron emission device capable of deflecting emitted electrons to a predetermined direction and preferably emitting electrons with a small drive voltage as well as a production method of the same. The electron emission according to the present invention includes a layered body including an auxiliary electrode, a first insulation layer, a first gate electrode, a second insulation layer, an emitter electrode, a third insulation layer, and a second gate electrode formed in this order on a substrate. In this electron emission device, a hole is formed through the first insulation layer, the first gate electrode, the second insulation layer, the emitter electrode, the third insulation layer, and the second gate electrode, so that the auxiliary electrode is exposed at the bottom of the hole and the first gate electrode protrudes further than the emitter electrode toward the center line of the hole.
    Type: Grant
    Filed: February 4, 1999
    Date of Patent: November 6, 2001
    Assignee: Sony Corporation
    Inventor: Jiro Yamada
  • Patent number: 6300713
    Abstract: A display includes a substrate and an emitter formed on the substrate. A first dielectric layer is formed on the substrate to have a thickness slightly less than a height of the emitter above the planar surface and includes an opening formed about the emitter. The display also includes a conductive extraction grid formed on the first dielectric layer. The extraction grid includes an opening surrounding the emitter. The display further includes a second dielectric layer formed on the extraction grid and a focusing electrode formed on the second dielectric layer. The focusing electrode is electrically coupled to the emitter through an impedance element. The focusing electrode includes an opening formed above the apex. The focusing electrode provides enhanced focusing performance together with reduced circuit complexity, resulting in a superior display.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: October 9, 2001
    Assignee: Micron Technology, Inc.
    Inventor: Zhongyi Xia
  • Publication number: 20010015615
    Abstract: A display includes a substrate and an emitter formed on the substrate. A first dielectric layer is formed on the substrate to have a thickness slightly less than a height of the emitter above the planar surface and includes an opening formed about the emitter. The display also includes a conductive extraction grid formed on the first dielectric layer. The extraction grid includes an opening surrounding the emitter. The display further includes a second dielectric layer formed on the extraction grid and a focusing electrode formed on the second dielectric layer. The focusing electrode is electrically coupled to the emitter through an impedance element. The focusing electrode includes an opening formed above the apex. The focusing electrode provides enhanced focusing performance together with reduced circuit complexity, resulting in a superior display.
    Type: Application
    Filed: May 1, 2001
    Publication date: August 23, 2001
    Inventor: Zhongyi Xia
  • Patent number: 6259190
    Abstract: A micropoint type cold cathode comprises a substrate including an array of micropoints and a plate disposed parallel to the substrate carrying the points. The plate includes a hole facing each point and thereby constitutes a grid. An insulator fills the space between the substrate and the grid except at the location of the points. The nominal distance between the summit of a point and the face of the grid farthest from the substrate is zero, the nominal radius of curvature at the summit of each point is 25 nm and the nominal radius of the holes in the grid is 1.3 &mgr;m.
    Type: Grant
    Filed: July 9, 1998
    Date of Patent: July 10, 2001
    Assignee: Alcatel
    Inventor: Didier Pierrejean
  • Patent number: 6255771
    Abstract: A field emitter device including an insulator structure provided on an upper gate line layer of the device. The insulator structure may surround groups of emitters arranged on adjacent gate lines, groups of emitters arranged on the same gate lines, and/or entire regions of a larger array of field emitters. The insulator structure may reduce the occurrence of flashovers to and from the gate lines and emitters when the field emitter device is used in a display. The insulator structure may also enhance the focus of electrons emitted by the field emitter device on the display screen. Focus may be further enhanced by the addition of a resistive coating on the insulator structure. Methods of making the insulator structure and resistive coating are also disclosed.
    Type: Grant
    Filed: December 4, 1997
    Date of Patent: July 3, 2001
    Assignee: eMagin Corporation
    Inventors: Gary W. Jones, Steven M. Zimmerman, Webster E. Howard, Stewart Lloyd
  • Patent number: 6229258
    Abstract: A display includes a substrate and an emitter formed on the substrate. A first dielectric layer is formed on the substrate to have a thickness slightly less than a height of the emitter above the planar surface and includes an opening formed about the emitter. The display also includes a conductive extraction grid formed on the first dielectric layer. The extraction grid includes an opening surrounding the emitter. The display further includes a second dielectric layer formed on the extraction grid and a focusing electrode formed on the second dielectric layer. The focusing electrode is electrically coupled to the emitter through an impedance element. The focusing electrode includes an opening formed above the apex. The focusing electrode provides enhanced focusing performance together with reduced circuit complexity, resulting in a superior display.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: May 8, 2001
    Assignee: Micron Technology, Inc.
    Inventor: Zhongyi Xia
  • Patent number: 6225739
    Abstract: A display includes a substrate and an emitter formed on the substrate. A first dielectric layer is formed on the substrate to have a thickness slightly less than a height of the emitter above the planar surface and includes an opening formed about the emitter. The display also includes a conductive extraction grid formed on the first dielectric layer. The extraction grid includes an opening surrounding the emitter. The display further includes a second dielectric layer formed on the extraction grid and a focusing electrode formed on the second dielectric layer. The focusing electrode is electrically coupled to the emitter through an impedance element. The focusing electrode includes an opening formed above the apex. The focusing electrode provides enhanced focusing performance together with reduced circuit complexity, resulting in a superior display.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: May 1, 2001
    Assignee: Micron Technology, Inc.
    Inventor: Zhongyi Xia
  • Patent number: 6204595
    Abstract: An electron emitter comprising a textured silicon wafer overcoated with a thin (200 Å) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.
    Type: Grant
    Filed: July 10, 1995
    Date of Patent: March 20, 2001
    Assignee: The Regents of the University of California
    Inventor: Steven Falabella
  • Patent number: 6147443
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: May 14, 1998
    Date of Patent: November 14, 2000
    Assignee: Pioneer Electronic Corporation
    Inventors: Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Kiyohide Ogasawara, Hiroshi Ito
  • Patent number: 6144155
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: May 14, 1998
    Date of Patent: November 7, 2000
    Assignee: Pioneer Electronic Corporation
    Inventors: Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Kiyohide Ogasawara, Hiroshi Ito
  • Patent number: 6140760
    Abstract: A cathode device comprising a plurality of emitter tips having conical tip end portions to emit electrons therefrom. A gate electrode layer has an opening through which the tip end portion of each of the emitter tips is exposed. The diameter of the opening in the gate electrode layer is made smaller than that of the portion of the emitter tip at the juncture thereof with the substrate. In the fabrication of the cathode device, an oxide layer is formed at least on the surface of the formed emitter tip to sharpen the latter. By removing the oxide layer, an inner circumferential wall of the opening of the gate electrode layer is formed on the outside of the conical tip end portion of the emitter tip and extends approximately in parallel to the conical tip end portion of the emitter tip.
    Type: Grant
    Filed: April 28, 1998
    Date of Patent: October 31, 2000
    Assignee: Fujitsu Limited
    Inventors: Osamu Toyoda, Keiichi Betsui, Shinya Fukuta, Tadashi Nakatani
  • Patent number: 6137219
    Abstract: A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.
    Type: Grant
    Filed: July 27, 1998
    Date of Patent: October 24, 2000
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Yoon Ho Song, Jin Ho Lee, Seung Youl Kang, Kyoung Ik Cho, Hyung Joun Yoo
  • Patent number: 6137212
    Abstract: A method for forming a field emission flat panel display includes deposit a conductive patterned layer on a substrate, depositing an emitter material over the patterned layer, patterning the emitter material to provide a series of mask caps, etching the emitter material to provide arrays of emitter peaks with the mask caps thereon, depositing a dielective layer on the patterned layer and on the mask caps, depositing a conductive gate layer on the dielectric layer, depositing a high-resistivity dielectric layer on the gate layer, depositing a low-resistivity dielectric layer on the high-resistivity dielectric layer, and etching away portions of the dielectric layer, gate layer, high-resistivity dielectric layer and low-resistivity dielectric layer to expose the mask caps, and removing the mask caps to expose the emitter peaks to provide an emitter cathode panel, providing a transparent panel having a conductive coating thereon, and depositing a layer of thin film phosphors on the conductive coating to provide
    Type: Grant
    Filed: May 26, 1998
    Date of Patent: October 24, 2000
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Jiang Liu, David Morton, Philip Krzyzkowski, M. Robert Miller
  • Patent number: 6124670
    Abstract: A unified fibrous field emission element is provided including a conductive fibrous central core element having an insulating material directly thereon the conductive fibrous central core element and a gate electrode directly thereon the insulating material, the conductive fibrous central core element further including emission sites situated longitudinally along the length of the conductive fibrous central core element.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: September 26, 2000
    Assignee: The Regents of the University of California
    Inventor: Steven M. Valone
  • Patent number: 6091190
    Abstract: An electron emitter (121, 221, 321, 421) includes an electron emitter structure (118) having a passivation layer (120, 220, 320, 420) formed thereon. The passivation layer (120, 220, 320, 420) is made from an oxide selected from a group consisting of the oxides of Ba, Ca, Sr, In, Sc, Ti, Ir, Co, Sr, Y, Zr, Ru, Pd, Sn, Lu, Hf, Re, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th, and combinations thereof. In the preferred embodiment, the electron emitter structure (118) is made from molybdenum, and the passivation layer (120, 220, 320, 420) is made from an emission-enhancing oxide having a work function that is less than the work function of the molybdenum.
    Type: Grant
    Filed: July 28, 1997
    Date of Patent: July 18, 2000
    Assignee: Motorola, Inc.
    Inventors: Babu R. Chalamala, Sung P. Pack, Charles A. Rowell
  • Patent number: 6072274
    Abstract: A molded plastic faceplate and/or a molded plastic backplate are used to form a flat panel display. A faceplate mold is formed by laser etching pixel recesses in the mold. The detail of such pixel recesses is copied onto a plastic faceplate by injection molding or compression molding a clear plastic. Such molding achieves pixel detail and depth detail to a microscopic precision. The borders of the pixel areas serve as spacers which separate the faceplate and backplate while containing liquid crystal or phosphor material. Electrical circuits are formed on the faceplate and/or backplate to define control circuitry for display pixels.
    Type: Grant
    Filed: October 22, 1997
    Date of Patent: June 6, 2000
    Assignee: Hewlett-Packard Company
    Inventor: Timothy J Jondrow
  • Patent number: 6057636
    Abstract: The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.
    Type: Grant
    Filed: September 16, 1997
    Date of Patent: May 2, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadashi Sakai, Tomio Ono, Naoshi Sakuma, Hiromichi Ohashi, Kazuya Nakayama
  • Patent number: 6051917
    Abstract: Electron guns are disclosed that produce low-brightness and high-emittance electron beams that are suitable for use in an electron-beam reduction-lithography apparatus. A preferred embodiment comprises a cathode, a Wehnelt electrode, an anode, and at least one control electrode placed between the cathode and the anode. Each of these components defines a spherical surface all having a common center point and all thus being concentric with one another. During operation, the anode has a grounded electrical potential while the cathode and the Wehnelt electrode each have a potential of about -100 KV. If the applied voltage to the control electrode is adjusted within a range of -99 to -90 KV, the brightness can be controlled to within a range of 1.times.10.sup.3 to 2.times.10.sup.4 A/cm.sup.2.sr.
    Type: Grant
    Filed: August 12, 1997
    Date of Patent: April 18, 2000
    Assignee: Nikon Corporation
    Inventor: Mamoru Nakasuji
  • Patent number: 6049166
    Abstract: A unified fibrous field emission element is provided including a conductive fibrous central core element having an insulating material directly thereon the conductive fibrous central core element and a gate electrode directly thereon the insulating material, the conductive fibrous central core element further including emission sites situated longitudinally along the length of the conductive fibrous central core element.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: April 11, 2000
    Assignee: The Regents of the University of California
    Inventor: Steven M. Valone
  • Patent number: 6037711
    Abstract: An anode of a flat panel display has a glass substrate, a patterned black grille on the substrate, a conductive layer covering the grille and the substrate, a phosphor layer covering, and one or more additional transparent layers that reduce the reflectance of the flat panel display from 14% down to 1%-4%. These additional layers are placed between the black matrix grille and the substrate, and between the conductive layer and phosphor layer. The two additional layers are selected and designed to reduce the reflectance that occurs at these respective interfaces.
    Type: Grant
    Filed: January 10, 1997
    Date of Patent: March 14, 2000
    Assignee: Micron Technology, Inc.
    Inventors: David A. Cathey, Charles M. Watkins, James J. Hofmann
  • Patent number: 6037708
    Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc.
    Type: Grant
    Filed: March 5, 1999
    Date of Patent: March 14, 2000
    Assignee: Advanced Vision Technologies, Inc.
    Inventor: Michael D. Potter
  • Patent number: 6008595
    Abstract: A field emission lamp, of either a diode or triode structure has a packaging whereby electrical access to the various electrodes of the lamp is provided through the rear or underside of the field emission device so that the individual lamps can be placed in close proximity to each other.
    Type: Grant
    Filed: April 21, 1997
    Date of Patent: December 28, 1999
    Assignee: SI Diamond Technology, Inc.
    Inventors: Richard Lee Fink, Nalin Kumar, Donald Miller Wilson
  • Patent number: 6008063
    Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the present invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array.
    Type: Grant
    Filed: March 1, 1999
    Date of Patent: December 28, 1999
    Assignee: Micron Technology, Inc.
    Inventor: Ammar Derraa
  • Patent number: 6008576
    Abstract: A flat display is provided, which includes: a cathode plate including emitter electrode lines each having emitter tips provided in pixel areas, and gate electrode lines crossing the emitter electrode lines at the pixel areas; and an anode plate spaced a predetermined distance from the cathode plate in an opposed relation and having an anode conductive layer and fluorescent layers formed on the anode conductive layer in the respective pixel areas; the emitter electrode lines and the gate electrode lines each having transparent portions formed of a transparent conductive film at least in the pixel areas so that light emission from the fluorescent layers can be viewed through the transparent portions.
    Type: Grant
    Filed: June 19, 1997
    Date of Patent: December 28, 1999
    Assignee: Fujitsu Limited
    Inventors: Tadashi Nakatani, Keiichi Betsui
  • Patent number: 5986399
    Abstract: In, for example a field emission display, the invention provides the possibility of combining a plurality of sub-substrates that are attached to a larger rear wall, because notably different modes of multiplexing provide a wider positioning tolerance of a sub-substrate with respect to the front plate. Moreover, the different multiplexing techniques lead to a smaller number of connections, even if no use is made of a rear wall supporting of sub-substrates. A plurality of multiplexing techniques provides the possibility of activating a substantially equally large number of pixels of different colours during parts of an image period, so that there is substantially no colour flicker.
    Type: Grant
    Filed: February 24, 1998
    Date of Patent: November 16, 1999
    Assignee: U.S. Philips Corporation
    Inventors: Gerardus Van Veen, Remko Horne, Dirk W. Harberts, Siebe T. De Zwart
  • Patent number: 5977696
    Abstract: In a field emission electron gun including emitters (104) on predetermined parts of a substrate (109), an insulator film (105) on a remaining part of the substrate, a first gate electrode (101) on the insulator film so as to surround the emitters with a space left between each emitter and the first gate electrode and to have an outer peripheral surface defining an emission region (E), a gate edge portion (106) of a conductor is formed on the insulator film to surround the outer peripheral surface of the first gate electrode in contact with the outer peripheral surface of the first gate electrode. A second gate electrode (102) is formed on the insulator film to surround the gate edge portion with a distance left between the gate edge portion and the second gate electrode applied with a second voltage less than a first voltage applied to the first gate electrode.
    Type: Grant
    Filed: May 8, 1997
    Date of Patent: November 2, 1999
    Assignee: NEC Corporation
    Inventor: Akihiko Okamoto
  • Patent number: 5932962
    Abstract: An electron emitter element is provided which comprises: an insulating base having a gate opening and a slit communicating to the gate opening; an emitter electrode layer formed in the gate opening and the slit on the insulating base; an emitter tip formed in the gate opening on the emitter electrode layer; a gate electrode layer formed on a top surface of the insulating base as circumscribing the gate opening and extending perpendicular to the emitter electrode layer; and the gate electrode layer and the emitter electrode layer being crossed each other with nothing interposed therebetween.
    Type: Grant
    Filed: May 28, 1996
    Date of Patent: August 3, 1999
    Assignee: Fujitsu Limited
    Inventors: Tadashi Nakatani, Keiichi Betsui, Shinya Fukuta
  • Patent number: 5920148
    Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc.
    Type: Grant
    Filed: March 19, 1997
    Date of Patent: July 6, 1999
    Assignee: Advanced Vision Technologies, Inc.
    Inventor: Michael D. Potter
  • Patent number: 5910704
    Abstract: A field emission display includes a substrate with a plurality of cathode layers provided thereon. A plurality of micro tips are provided on each of the cathode layers. A plurality of gate insulating layers are also provided on the cathode layers, each of the gate insulating layers having a plurality of holes for accommodating each unit of the micro tips. A plurality of gate electrodes are provided on the gate insulating layers, each of the gate electrodes having a plurality of holes corresponding to each hole of the plurality of gate insulating layers, each of the plurality of gate insulating layers and each of the plurality of gate electrodes being alternately provided on each other.
    Type: Grant
    Filed: September 30, 1996
    Date of Patent: June 8, 1999
    Assignee: Samsung Display Devices Co., Ltd.
    Inventor: Dae-ho Choo
  • Patent number: 5889359
    Abstract: There is provided a field-emission type cold cathode including (a) a substrate at least a surface of which has electrical conductivity, (b) an insulating layer formed on the substrate, (c) an electrically conductive gate electrode formed on the insulating layer, (d) an almost conical, sharp-pointed emitter electrode disposed in a hole formed through the gate electrode and insulating layer, (e) a focusing electrode formed on the insulating layer so that the focusing electrode is located in the same plane as the gate electrode and surrounds the gate electrode, and (f) a feeder line formed in the same plane as the gate electrode. The feeder line extends from the gate electrode into the focusing electrode and being shaped complementarily with the focusing electrode so that the focusing electrode is present at every radial directions as viewed from a center of the emitter electrode.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: March 30, 1999
    Assignee: NEC Corporation
    Inventor: Nobuya Seko
  • Patent number: 5880554
    Abstract: Described are methods for making, and resultant structures of, a field emission display with soft luminescence and a comfortable image for a viewer of the display. The field emission display is formed with a baseplate and an opposing face plate. Field emission microtips are formed in openings in a conductive and insulating layer on the baseplate. An anode is formed on either the faceplate, or on the conductive layer surrounding each opening. Phosphorescent material is formed over the anode, A blocking layer is formed between the phosphor and the faceplate, such that during operation of the display direct light emission from the phosphor is blocked, resulting in indirect phosphorescence and a more comfortable display image. An optional reflective layer may be added over the conductive layer to increase phosphorescence.
    Type: Grant
    Filed: June 8, 1998
    Date of Patent: March 9, 1999
    Assignee: Industrial Technology Research Institute
    Inventor: David Nan-Chou Liu
  • Patent number: 5872421
    Abstract: A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter.
    Type: Grant
    Filed: November 5, 1997
    Date of Patent: February 16, 1999
    Assignee: Advanced Vision Technologies, Inc.
    Inventor: Michael D Potter
  • Patent number: 5866974
    Abstract: An electron beam generator includes: an electron emitting cathode (1); an anode (3) with an anode bore (4) for the passage of an electron beam (6); a Wehnelt electrode (2) between the cathode (1) and the anode (3) for controlling the electron beam; the cathode (1); the anode (3) and the Wehnelt electrode (2) disposed within a vacuum chamber (100); and a magnetic unit (7) disposed between the cathode (1) and the anode (3) for generating a static transverse magnetic field causing the electrons to be deflected along a curved path until the electrons enter the anode (3) such that ions follow an ionic path back to strike the Wehnelt electrode (2) and are kept from striking the cathode (1) by displacement caused by the ionic path. The present invention reduces the number of ions that impact the cathode and reduces the number of ions that are formed by the ionization of residual molecules, increasing the service life of the cathode.
    Type: Grant
    Filed: May 6, 1997
    Date of Patent: February 2, 1999
    Assignee: Linotype-Hell AG
    Inventors: Karl Heinz Herrmann, Roland Herb, Wilfried Hermann Nisch, Gerald Johannes Sermund
  • Patent number: 5864147
    Abstract: A field emission device is configured so as to suppress any deviation of the central axis of the distribution of emitted electrons from a conical cathode, with no electrode in addition to the gate electrode. A conductive layer is disposed over an insulating layer and has an electron emission window disposed over the conical cathode. Plural curved slits are formed in the conductive layer so as to expose the insulating layer and are arranged along a circle which is concentric with the tip of the conical cathode. The gate electrode is formed by the portion of conductive layer between the electron emission window and the curved slits. The portion of the conductive layer outside of the curved slits serves to distribute an applied potential to the gate electrodes of plural field emission devices arranged in a matrix. The portions of the conductive layer disposed between the curved slits serve to connect the gate electrode to the outer portion of the conductive layer.
    Type: Grant
    Filed: June 24, 1997
    Date of Patent: January 26, 1999
    Assignee: NEC Corporation
    Inventor: Kazuo Konuma
  • Patent number: 5851669
    Abstract: A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer that overlies a lower conductive region situated over insulating material of a supporting substrate. Electron-emissive filaments occupy pores extending through the porous layer. A conductive gate layer through which openings extend at locations centered on the filaments typically overlies the porous layer. Cavities are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.
    Type: Grant
    Filed: May 22, 1995
    Date of Patent: December 22, 1998
    Assignee: Candescent Technologies Corporation
    Inventors: John M. Macaulay, Peter C. Searson, Robert M. Duboc, Jr., Christopher J. Spindt
  • Patent number: 5847495
    Abstract: An electron-emitting device comprises an electroconductive film including an electron-emitting region disposed between a pair of electrodes arranged on a substrate. The electron-emitting region is formed close to the step portion formed by one of the electrodes and the substrate.
    Type: Grant
    Filed: September 22, 1995
    Date of Patent: December 8, 1998
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masato Yamanobe, Takeo Tsukamoto, Keisuke Yamamoto, Yasuhiro Hamamoto
  • Patent number: 5841221
    Abstract: A collector for an electron beam tube includes a ceramic cylinder within which are located rings of a first material, such as copper, and rings of a second material, such as molybdenum, arranged alternately along the longitudinal axis of the cylinder. The ratio of the axial lengths of the rings at the inner surface of the ceramic cylinder is selected so as to provide temperature compensation. The rings of one material surround part of adjacent rings of the other material to confine thermal expansion in a radial direction.
    Type: Grant
    Filed: April 9, 1997
    Date of Patent: November 24, 1998
    Assignee: EEV Limited
    Inventor: Alan Griggs
  • Patent number: 5834885
    Abstract: A field emission cathode which is capable of increasing bond strength between emitters and a resitive layer and a method for manufacturing the same which is capable of facilitating manufacturing of the cathode. The field emission cathode includes a laminated board, which includes a substrate, and at least a cathode electrode layer, a resitive layer, an insulating layer and a gate electrode layer which are deposited in the form of a film on the substrate in order. The gate electrode layer and insulating layer are formed with through-holes so as to commonly extend through the gate electrode layer and insulating layer. The cathode also includes buffer layers made of an insulating material and formed on portions of the resistive layer exposed via the through-holes, as well as emitters arranged on the buffer layers, respectively, resulting in bond strength between the resistive layer and the emitters being increased.
    Type: Grant
    Filed: December 6, 1996
    Date of Patent: November 10, 1998
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Shigeo Itoh, Teruo Watanabe, Kazuyoshi Ohtsu, Masateru Taniguchi
  • Patent number: 5808400
    Abstract: A field emission display with improved viewing characteristics is described. The field emission display is formed with a baseplate and an opposing face plate. Field emission microtips are formed in openings in a conductive and insulating layer on the baseplate. An anode is formed on either the faceplate, or on the conductive layer surrounding each opening. Phosphorescent material is formed over the anode. A blocking layer is formed between the phosphor and the faceplate, such that during operation of the display direct light emission from the phosphor is blocked, resulting in indirect phosphorescence and a more comfortable display image. An optional reflective layer may be added over the conductive layer to increase phosphorescence.
    Type: Grant
    Filed: February 26, 1996
    Date of Patent: September 15, 1998
    Assignee: Industrial Technology Research Institute
    Inventor: David Nan-Chou Liu
  • Patent number: 5801485
    Abstract: In, for example a field emission display, the invention provides the possibility of combining a plurality of sub-substrates that are attached to a larger rear wall, because notably different modes of multiplexing provide a wider positioning tolerance of a sub-substrate with respect to the front plate. Moreover, the different multiplexing techniques lead to a smaller number of connections, even if no use is made of a rear wall supporting sub-substrates. A plurality of multiplexing techniques provides the possibility of activating a substantially equally large number of pixels of different colors during parts of an image period, so that there is substantially no color flicker.
    Type: Grant
    Filed: June 20, 1995
    Date of Patent: September 1, 1998
    Assignee: U.S. Philips Corporation
    Inventors: Gerardus N. A. Van Veen, Remko Horne, Dirk W. Harberts, Siebe T. De Zwart
  • Patent number: 5793154
    Abstract: A field emission element including a gate and an emitter and capable of penting any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: August 11, 1998
    Assignees: Futaba Denshi Kogyo K.K., Electronical Laboratory, Agency of Industrial Science and Technology
    Inventors: Shigeo Itoh, Teruo Watanabe, Makoto Miyamori, Norio Nishimura, Junji Itoh, Seigo Kanemaru
  • Patent number: 5786657
    Abstract: In a field emission electron gun including emitters (104) on predetermined parts of a substrate (409), an insulator film (105) on a remaining part of the substrate, a first gate electrode (101) on the insulator film so as to surround the emitters with a space left between each emitter and the first gate electrode, the emitters are formed on the substrate except a center part of the substrate. The first gate electrode has an inner peripheral surface which defines a hole (107) exposing a center portion of the insulator film that is positioned on the center part of the substrate. A second gate electrode (102) is formed on the insulator film to surround an outer peripheral surface of the first gate electrode with a distance left between the outer peripheral surface of the first gate electrode and the second gate electrode.
    Type: Grant
    Filed: April 16, 1997
    Date of Patent: July 28, 1998
    Assignee: NEC Corporation
    Inventor: Akihiko Okamoto
  • Patent number: 5786656
    Abstract: A field-emission cold-cathode device including a substrate, an emitter having a sharp distal, a gate electrode having a hole in a region of the distal end of the emitter, and a focusing electrode formed farther from the distal end of the emitter than the gate electrode in a region of an end portion near the emitter.
    Type: Grant
    Filed: September 5, 1996
    Date of Patent: July 28, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshimichi Hasegawa, Masayuki Nakamoto
  • Patent number: 5763997
    Abstract: A matrix addressable flat panel display includes a flat cathode operable for emitting electrons to an anode when an electric field is produced across the surface of the flat cathode by two electrodes placed on each side of the flat cathode. The flat cathode may consist of a cermet or amorphic diamond or some other combination of a conducting material and an insulating material such as a low effective work function material. The electric field produced causes electrons to hop on the surface of the cathode at the conducting-insulating interfaces. An electric field produced between the anode and the cathode causes these electrons to bombard a phosphor layer on the anode.
    Type: Grant
    Filed: June 1, 1995
    Date of Patent: June 9, 1998
    Assignee: SI Diamond Technology, Inc.
    Inventor: Nalin Kumar
  • Patent number: 5760538
    Abstract: An electron beam apparatus includes an electron source having an electron-emitting device, an electrode for controlling an electron beam emitted from the electron source, a target to be irradiated with an electron beam emitted from the electron source and a spacer arranged between the electron source and the electrode. The spacer has a semiconductor film on the surface thereof that is electrically connected to the electron source and the electrode.
    Type: Grant
    Filed: August 19, 1997
    Date of Patent: June 2, 1998
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hideaki Mitsutake, Shinichi Kawate, Naoto Nakamura, Yoshihisa Sano