Discharge Devices Having An Electrode Of Particular Material Patents (Class 313/311)
  • Publication number: 20120153806
    Abstract: An electrode for a discharge lamp is provided with a mayenite compound in at least a part of the electrode that emits secondary electrons, and a surface of a surface layer of the mayenite compound is plasma treated.
    Type: Application
    Filed: February 24, 2012
    Publication date: June 21, 2012
    Applicant: Asahi Glass Company, Limited
    Inventors: Kazuhiro Ito, Satoru Watanabe, Naomichi Miyakawa, Yutaka Kuroiwa, Setsuro Ito
  • Patent number: 8183756
    Abstract: A thermionic electron emitter (1) is proposed comprising an emitter part (2) with a substantially flat electron emission surface (3) and a bordering surface (5) adjacent thereto. In order to better absorb main stress loads (L) induced by external forces, the emitter part is provided with an anisotropic polycrystalline material having a crystal grain structure of elongated interlocked grains the longitudinal direction (G) of which is oriented substantially perpendicular to the direction (L) of the main stress loads occurring under normal operating conditions.
    Type: Grant
    Filed: July 18, 2008
    Date of Patent: May 22, 2012
    Assignee: Koninklijke Philips Electronics NV
    Inventors: Zoryana Terletska, Stefan Hauttmann
  • Patent number: 8164255
    Abstract: An inorganic light emitting display including: a first electrode; a second electrode facing the first electrode; a light emitting layer disposed between the first electrode and the second electrode; and an field emission layer disposed between the light emitting layer and the second electrode.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: April 24, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Yoon-Jin Kim, Jae-Myung Kim, Hee-Sung Moon, Mun-Ho Nam, Hyoung-Bin Park, Seung-Hyun Son
  • Patent number: 8159119
    Abstract: Disclosed are a vacuum channel transistor including a planar cathode layer formed of a material having a low work function or a planar cathode layer including a heat resistant layer formed of a material having a low work function, and a manufacturing method of the same. In the vacuum channel transistor, electrons can be emitted even when a low voltage is applied to a gate layer, a voltage of an anode layer has a small influence on electron emission of a cathode layer, and instability of emission current is obviated. Accordingly, high efficiency and a long lifespan can be achieved, and thus operational stability is secured.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: April 17, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Dae Yong Kim, Hyun Tak Kim
  • Patent number: 8154185
    Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
    Type: Grant
    Filed: February 12, 2007
    Date of Patent: April 10, 2012
    Assignees: The Board of Trustees of the Leland Stanford Junior University, The Regents of the University of California
    Inventors: Wanli Yang, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
  • Patent number: 8154184
    Abstract: The present invention provides an electron beam apparatus provided with an electron-emitting device which has a simple structure, shows high electron-emitting efficiency and stably works. This electron beam apparatus has an insulating member and a gate formed on a substrate, a recess portion formed in the insulating member, a protruding portion that protrudes from an edge of the recess portion toward the gate and is provided on an end part of a cathode opposing to the gate, which is arranged on the side face of the insulating member; and makes an electric field converge on an end part in the width direction of the protruding portion to make an electron emitted therefrom.
    Type: Grant
    Filed: November 15, 2010
    Date of Patent: April 10, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takeo Tsukamoto, Takuto Moriguchi, Eiji Takeuchi
  • Patent number: 8143774
    Abstract: According to example embodiments, a method for manufacturing a field emission cathode includes providing a liquid compound comprising a liquid phenolic resin and at least one of a metal salt and a metal oxide arranging a conductive cathode support in a vicinity of the liquid compound, and heating the liquid compound. Heating the liquid compound transforms the liquid compound into a solid compound foam.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: March 27, 2012
    Assignee: Lightlab Sweden AB
    Inventor: Qiu-Hong Hu
  • Patent number: 8138005
    Abstract: Disclosed is a method for fabricating a high-performance field-effect transistor biosensor for diagnosing cancers using micro conductive polymer nanomaterials funtionalized with anti-VEGF aptamer. Disclosed is a high-sensitivity field-effect transistor biosensor for diagnosing cancers using a micro conductive polymer nanomaterial transistor array including a micro polymer nanomaterial transistor array including a channel region provided with a metal source electrode, a metal drain electrode, a gate and micro polymer nanomaterials, and an anti-VEGF aptamer covalently bound to the surface of the micro polymer nanomaterials constituting the channel region of the micro polymer nanomaterials transistor array, to target VEGF (Vascular endothelial growth factor).
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: March 20, 2012
    Assignee: Snu R&DB Foundation
    Inventors: Jyong Sik Jang, Oh Seok Kwon, Seon Joo Park
  • Patent number: 8138675
    Abstract: An emitter is disclosed. The emitter includes a base layer comprising an array of nanocavities on an emission surface of the base layer, wherein facets of the nanocavities are substantially along equivalent crystallographic planes of one or more families of planes having substantially equal surface energies, wherein the equivalent crystallographic planes have surface energies equal to or lower than a surface energy of the crystallographic plane of the emission surface. Methods of making such emitters and radiation sources including such emitters are also disclosed.
    Type: Grant
    Filed: February 27, 2009
    Date of Patent: March 20, 2012
    Assignee: General Electric Company
    Inventors: Andrew David Deal, William Paul Minnear, Gregory Michael Gratson, David Jeffrey Bryan
  • Publication number: 20120062101
    Abstract: A discharge lamp (1) comprising a discharge vessel (4), at least one electrode (22, 24) arranged within the discharge vessel, wherein at least parts of the electrode (22) are provided with a particle composite coating (32) made up of a matrix layer and particles embedded in the matrix layer, wherein the extinction coefficient k of the material for the matrix layer is less than 0.1 in the spectral range between 600 nm and 2 ?m, and wherein the extinction coefficient k of the material for the particles is greater than 0.1 in the spectral range between 600 nm and 2 ?m.
    Type: Application
    Filed: April 22, 2010
    Publication date: March 15, 2012
    Inventor: Bernhard Winzek
  • Patent number: 8115373
    Abstract: A method and system for treating emissions includes charging particles in an exhaust stream, producing one or more radicals, and oxidizing at least a portion of the charged particles with at least a portion of the produced radicals. At least a portion of the charged particles in the exhaust stream are then attracted on at least one attraction surface which is one of oppositely charged from the charged particles and grounded. The attracted particles are oxidized with another portion of the one or more produced radicals to self regenerate the at least one attraction surface. Downstream from where the attracted particles are oxidized, at least a portion of one or more first compounds in the exhaust stream are converted to one or more second compounds downstream from the attracting. Additionally, at least a portion of any remaining charged particles are oxidized into one or more gases.
    Type: Grant
    Filed: June 30, 2006
    Date of Patent: February 14, 2012
    Assignee: Rochester Institute of Technology
    Inventors: Ali Ogut, Cheng Chen
  • Publication number: 20120033190
    Abstract: The present invention aims to prevent breakage of a sealing part and an electrode of a high pressure discharge lamp, and provides an electrode 100 used for a discharge lamp and having a rod-shaped part 101, one end of the rod-shaped part 101 to be sealed by a sealing part of an arc tube of the discharge lamp, the other end of the rod-shaped part 101 to be in a discharge space in the arc tube, wherein the rod-shaped part 101 has a rough surface that is composed of a plurality of types of crystal grains each having a different surface condition due to differences in crystal orientation.
    Type: Application
    Filed: March 4, 2011
    Publication date: February 9, 2012
    Inventors: Jun Sakaguchi, Yoshiki Kitahara, Katsuhiro Ono, Kazunori Ohta
  • Patent number: 8110971
    Abstract: A light emitting element of the present invention includes an electrode substrate; a thin-film electrode; and an electron acceleration layer sandwiched between the electrode substrate and the thin-film electrode. In the electron acceleration layer, as a result of a voltage applied between the electrode substrate and the thin-film electrode, electrons are accelerated so as to be turned into hot electrons. The hot electrons excite surfaces of the silicon fine particles contained in the electron acceleration layer so that the surfaces of the silicon fine particles emit light. Such a light emitting element of the present invention is a novel light emitting element, which has not been achieved by the conventional techniques. That is, the light emitting element of the present invention is able to (i) be produced by using a silicon material, which is available at low price, through a simple production method, and (ii) efficiently emit light.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: February 7, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hiroyuki Hirakawa, Yasuo Imura, Ayae Nagaoka, Tadashi Iwamatsu
  • Patent number: 8110975
    Abstract: A field emission device includes an insulating substrate, one or more grids located on the insulating substrate. Each grid includes a first, second, third and fourth electrode down-leads and an electron emitting unit. The first, second, third and fourth electrode down-leads are located on the periphery of the grid. The first and the second electrode down-leads are parallel to each other. The third and the fourth electrode down-leads are parallel to each other. The electron emitting unit includes a first electrode, a second electrode and at least one electron emitter. The first electrode is electrically connected to the first electrode down-lead, and the second electrode is electrically connected to the third electrode down-lead. One end of the electron emitter is connected to the second electrode and an opposite end of the electron emitter is spaced from the first electrode by a predetermined distance.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: February 7, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Peng Liu, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 8093796
    Abstract: An electron beam apparatus 11 comprises a substrate 1, a first electrode wiring 2 formed on the substrate 1, an insulating layer 4 covering the first electrode wiring 2, a second electrode wiring 3 formed on the insulating layer 4 so as to cross the first electrode wiring 2, and on the substrate 1, an electron emitting device 6 located distant from an electrode wiring crossing region 9 where the first electrode wiring 2 and the second electrode wiring 3 cross each other, and connected to both the first electrode wiring 2 and the second electrode wiring 3 so as to receive drive energy from the first electrode wiring 2 and the second electrode wiring 3, wherein a void 5 is formed between the first electrode wiring 2 and the second electrode wiring 3 in at least a part of the electrode wiring crossing region 9.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: January 10, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventor: Yohei Hashizume
  • Patent number: 8083393
    Abstract: Disclosed are LED lamp assemblies that are substantially inseparable. The LED lamp assemblies use discrete components that are individually manufactured and then assembled in a manner that substantially prevents disassembly or disengagement of components. An interference fit can be used to substantially secure components of the LED lamp assemblies. Bonding techniques can also be used, including adhesive and solvent bonds, as well as thermal bonds, including sonic bonds.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: December 27, 2011
    Assignee: 1 Energy Solutions, Inc.
    Inventor: Jing Jing Yu
  • Patent number: 8084927
    Abstract: A thermal electron emitter includes at least one carbon nanotube twisted wire and a plurality of electron emission particles mixed with the twisted wire. The carbon nanotube twisted wire comprises a plurality of carbon nanotubes. A work function of the electron emission particles is lower than the work function of the carbon nanotubes. A thermal electron emission device using the thermal electron emitter is also related.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: December 27, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Lin Xiao, Liang Liu, Chang-Hong Liu, Shou-Shan Fan
  • Patent number: 8080931
    Abstract: A conductive film of thickness of from 3 nm to 50 nm made from a metal or ally formed on a substrate, wherein the ratio of density thereof to bulk density of the metal or alloy is from 0.2 to 0.5, and the ratio of resistivity thereof to bulk resistivity of the metal or alloy is from 100 to 100000.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: December 20, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masahiro Terada, Makoto Kojima, Takashi Iwaki, Takeru Mizue, Tsuyoshi Ibe
  • Patent number: 8080929
    Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.
    Type: Grant
    Filed: May 27, 2008
    Date of Patent: December 20, 2011
    Assignees: Tatung Company, Tatung University
    Inventors: Jian-Min Jeng, Jyi-Tsong Lo, Wen-Ching Shih, Wei-Lung Tasi
  • Patent number: 8072126
    Abstract: An exemplary method for manufacturing a field electron emission source includes: providing a substrate (102); depositing a cathode layer (104) on a surface of the substrate; providing a carbon nanotube paste, coating the carbon nanotube paste on the cathode layer; calcining the carbon nanotube paste to form a carbon nanotube composite layer (110); and, irradiating the carbon nanotube composite layer with a laser beam of a certain power density, thereby achieving a field electron emission source.
    Type: Grant
    Filed: July 24, 2008
    Date of Patent: December 6, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Zhuo Chen, Feng Zhu, Kai-Li Jiang, Liang Liu, Shou-Shan Fan
  • Patent number: 8072146
    Abstract: The disclosed subject matter includes a fluorescent lamp and particularly a cold cathode fluorescent lamp that can be employed as a light source for a LCD backlight unit for a television, a computer, a display, and the like. The fluorescent lamp can include a couple of electrode units located opposite to each other at each end of a tube, a couple of welding beads sealing both the tube and the couple of electrode units, and a filler gas located in the tube. Each of the electrode units can include an emitter electrode that is configured with a crystalline silicon semiconductor material having an electrical conductivity or configured with other semiconductor materials, and can include a concave portion formed thereon. The electrode units can prevent blackening on an inner surface of the tube by avoiding the occurrence of spattering. Thus, the fluorescent lamp using the electrode units can enjoy a long life, high reliability, easy manufacture, and the like.
    Type: Grant
    Filed: May 17, 2008
    Date of Patent: December 6, 2011
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Kazuhiro Miyamoto, Masayuki Kanechika, Koji Kikuchihara
  • Patent number: 8072125
    Abstract: A spark plug 100 comprised of a metal shell 1, an insulator 2, a center electrode 3 and a ground electrode 4. A rear-end face of the ground electrode 4 is welded to a front-end face of the metal shell 1, and a bent portion 5 located at the intermediated position in the longitudinal direction is bent toward the center of the spark plug 100. The ground electrode 4 assumes a circular-shape with a diameter of 2 mm or less whereby an inflow of an air-fuel mixture is not disturbed even when the air-fuel mixture directly flows into a back face of the ground electrode 4. The ground electrode 4 is comprised of an outer layer 4A made of a nickel alloy and an inner layer 4B made of pure copper with an excellent thermal conductivity, in which a ratio of a cross-sectional area of the inner layer 4B to the entire cross-sectional area of the ground electrode 4 is 10% or more to 35% or less.
    Type: Grant
    Filed: March 19, 2007
    Date of Patent: December 6, 2011
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Kazuyoshi Torii, Kazumasa Yoshida, Wataru Matsutani
  • Patent number: 8071887
    Abstract: A printed circuit board includes a substrate having a surface, a circuit layer having a plurality of electrical traces formed on the surface, and an electrically conductive metal layer formed on the circuit layer. The circuit layer is comprised of a composite of carbon nano-tubes and metallic nano-particles.
    Type: Grant
    Filed: October 17, 2008
    Date of Patent: December 6, 2011
    Assignees: FuKui Precision Component (Shenzhen) Co., Ltd., Zhen Ding Technology Co., Ltd.
    Inventors: Shing-Tza Liou, Yao-Wen Bai, Cheng-Hsien Lin
  • Patent number: 8067892
    Abstract: A method is provided for forming a corona-producing emitter electrode by depositing substantially pure silicon carbide by CVD and forming a corona-producing emitter electrode with the deposited silicon carbide. In addition, a method of forming a corona-producing gas ionizer is provided by providing a corona electrode formed from CVD silicon carbide, electrically coupling the corona electrode to a high voltage power supply, and providing an AC or DC voltage from the high voltage power supply to the corona electrode. Furthermore, a method of ionizing gas in an environment is provided by providing a corona-producing ionizer emitter electrode formed substantially of CVD silicon carbide, electrically coupling the electrode to a high voltage power supply, and providing an AC or DC voltage from the high voltage power supply to the electrode.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: November 29, 2011
    Assignee: Illinois Tool Works Inc.
    Inventors: James R. Curtis, John A. Gorczyca
  • Patent number: 8062554
    Abstract: Apparatus and methods according to various aspects of the present invention may operate in conjunction with composite matrix material and reinforcement material, such as nanostructures. The nanostructures may be evenly dispersed and/or aligned in the matrix material through application of an electromagnetic field, resulting in a nanocomposite material. In one embodiment, the nanocomposite material is suitable for large scale processing.
    Type: Grant
    Filed: May 14, 2008
    Date of Patent: November 22, 2011
    Assignee: Raytheon Company
    Inventors: Timothy J. Imholt, Jerry M. Grimm, James A. Pruett, Christopher J. Gintz, Graham E. Gintz
  • Publication number: 20110273075
    Abstract: A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate.
    Type: Application
    Filed: January 15, 2010
    Publication date: November 10, 2011
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO
    Inventors: Hiroshi Goto, Aya Miki, Katsufumi Tomihisa, Mototaka Ochi, Takashi Onishi, Toshihiro Kugimiya
  • Patent number: 8053967
    Abstract: An electron emission device includes a cathode electrode and a gate electrode, the gate electrode is separated and insulated from the cathode electrode, the gate electrode is a carbon nanotube layer, and the carbon nanotube layer includes a plurality of carbon nanotube wire-like structures. A display device that includes the electron emission device is also disclosed.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: November 8, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Lin Xiao, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 8043532
    Abstract: Disclosed herein is a composition for electrodes that enables a firing process in air at a temperature of 600° C. or less and does not cause an increase in absolute resistance and a substantial variation of the resistance even when the composition is repeatedly subjected to the firing process. The composition for electrodes comprises: about 5 to about 95% by weight of aluminum powder, the aluminum powder having a particle size distribution of about 2.0 or less as expressed by the following Equation (1) and having D50 in the range of about 0.1 ?m?D50?about 20 ?m; about 3 to about 60% by weight of an organic binder; and the balance of a solvent: Particle size distribution=(D90?D10)/D50??(1) wherein D10, D50, and D90 represent particle diameters at 10%, 50% and 90% points on an accumulation curve of a particle size distribution when the total weight is 100%. An electrode and a PDP fabricated using the composition are also disclosed.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: October 25, 2011
    Assignee: Cheil Industries Inc.
    Inventors: Jae Hwi Cho, Kuninori Okamoto, Yong Hyun Kim, Hyun Don Kim
  • Publication number: 20110241527
    Abstract: A carbon nanotube slurry consists of carbon nanotubes, glass powder, and organic carrier. The field emission device includes an insulative substrate, a cathode conductive layer, and an electron emission layer. The cathode conductive layer is located on a surface of the insulative substrate. The electron emission layer is located on a surface of the cathode conductive layer. The electron emission layer consists of a glass layer and a plurality of carbon nanotubes electrically connected to the cathode conductive layer.
    Type: Application
    Filed: October 14, 2010
    Publication date: October 6, 2011
    Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: QI CAI, XING ZHANG, HAI-YAN HAO, SHOU-SHAN FAN
  • Patent number: 8030833
    Abstract: One embodiment includes forming a nanowire on a substrate from an organometallic vapor. The nanowire is grown during this formation in a direction away from the substrate and is freestanding during growth. The nanowire has a first dimension of 500 nanometers or less and a second dimension extending from the substrate to a free end of the nanowire at least 10 times greater than the first dimension. In one form, the organometallic vapor includes copper, silver, or gold. Alternatively or additionally, the nanowire is of a monocrystalline structure.
    Type: Grant
    Filed: February 13, 2008
    Date of Patent: October 4, 2011
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Hyungsoo Choi, Kyekyoon Kim
  • Patent number: 8022610
    Abstract: An electronic device including a pair of electrodes disposed on a substrate and carbon nanotubes electrically connecting the electrodes. A method for manufacturing this device in which the electrodes are disposed on the substrate and the nanotubes are prepared to electrically connect the electrodes.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: September 20, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tohru Den, Tatsuya Iwasaki
  • Patent number: 8013510
    Abstract: An electron emission device includes a cathode device and a gate electrode. The gate electrode is separated and insulted from the cathode device. The gate electrode includes a carbon nanotube layer having a plurality of spaces. A display device includes a cathode device, an anode device spaced from the cathode electrode and a gate electrode. The gate electrode is disposed between the cathode device and the anode device. The cathode device, the anode device and the gate electrode are separated and insulted from each other. The gate electrode comprises a carbon nanotube layer having a plurality of spaces.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: September 6, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Lin Xiao, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 8013505
    Abstract: A field emission electron source includes a CNT needle and a conductive base. The CNT needle has an end portion and a broken end portion; the end portion is contacted with and electrically connected to a surface of the conductive base. The CNTs at the broken end portion form a taper-shape structure, wherein one CNT protrudes and is higher than the adjacent CNTs.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: September 6, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yang Wei, Liang Liu, Shou-Shan Fan
  • Patent number: 8004167
    Abstract: A field effect electron emitting apparatus using nano-wire electron emitters is disclosed where each nano-wire electron emitter may be grown in a pore of an insulating layer and/or may have at least a portion exposed from the pore. A method of manufacturing a field effect electron emitting apparatus is also disclosed. The field effect electron emitting apparatus may be used in a display.
    Type: Grant
    Filed: August 21, 2007
    Date of Patent: August 23, 2011
    Assignee: Sony Corporation
    Inventors: Takehisa Ishida, Wei Beng Ng
  • Patent number: 7999453
    Abstract: A field effect electron emitting apparatus comprising an insulating layer having an array of pores is disclosed, each pore has at least one nano-wire electron emitter which is shorter than the pore, and/or each pore may have a plurality of nano-wire electron emitters. A method of manufacturing a electron emitting array is also disclosed. The field effect electron emitting apparatus may be used in a display.
    Type: Grant
    Filed: August 21, 2007
    Date of Patent: August 16, 2011
    Assignee: Sony Corporation
    Inventor: Takehisa Ishida
  • Patent number: 7986083
    Abstract: An electron emission device includes a cathode electrode and a gate electrode, the gate electrode is separated and insulated from the cathode, the gate electrode is a CNT layer, and the CNT layer includes at least a carbon nanotube film and a plurality of carbon nanotube reinforcement structures. A display that includes the electron emission device is also disclosed.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: July 26, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Lin Xiao, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20110162799
    Abstract: A plasma processing apparatus includes a depressurizable processing chamber; an electrode provided in the processing chamber; and a high frequency power supply for supplying a high frequency power into the processing chamber to thereby generating a plasma. Further, the electrode includes a base formed of a dielectric material; a dielectric body buried in the base and formed of the same dielectric material as the base; and a conductive adhesive layer provided in a bonding portion between the base and the dielectric body, the conductive adhesive layer bonding together and fixing the base and the dielectric body to each other.
    Type: Application
    Filed: December 28, 2010
    Publication date: July 7, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Daisuke HAYASHI
  • Publication number: 20110163656
    Abstract: A method of manufacturing a thin film, including: mixing carbon nanofibers into an elastomer including an unsaturated bond or a group having affinity to the carbon nanofibers, and dispersing the carbon nanofibers by applying a shear force to obtain a carbon fiber composite material; mixing the carbon fiber composite material and a solvent to obtain a coating liquid; and applying the coating liquid to a substrate to form a thin film.
    Type: Application
    Filed: March 9, 2011
    Publication date: July 7, 2011
    Applicant: NISSIN KOGYO CO., LTD.
    Inventors: Toru Noguchi, Akira Magario
  • Publication number: 20110163655
    Abstract: An electrode for a discharge lamp, wherein the electrode comprises a pin and a mass arranged on an end of the pin by melting over an electrode coil. The pin consists of tungsten with microstructure-stabilizing additives, wherein the concentration of the microstructure-stabilizing additives is greater than or equal to 30 ppm. The electrode coil consists of pure tungsten, which has additives at most up to a concentration of 20 ppm.
    Type: Application
    Filed: September 5, 2008
    Publication date: July 7, 2011
    Inventor: Markus Stange
  • Patent number: 7973460
    Abstract: A composition for forming an electron emitter, an electron emitter formed using the composition, and a backlight unit including the electron emitter, where dispersion of the electron emission material in the composition is increased, and the composition includes an electron emission material, a vehicle, and carbon-based filler particles.
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: July 5, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Yoon-Jin Kim, Jae-Myung Kim, Hee-Sung Moon
  • Patent number: 7969079
    Abstract: A carbon nanotube device in accordance with the invention includes a free-standing membrane that is peripherally supported by a support structure. The membrane includes an aperture that extends through a thickness of the membrane. At least one carbon nanotube extends across the aperture on a front surface of the membrane. The carbon nanotube is also accessible from a back surface of the membrane.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: June 28, 2011
    Assignee: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Haibing Peng, Daniel Branton
  • Patent number: 7960905
    Abstract: The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: June 14, 2011
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Takatoshi Yamada, Christoph Nebel, Shinichi Shikata
  • Patent number: 7960904
    Abstract: The present invention relates to a field emission device comprising an anode and a cathode, wherein said cathode includes carbon nanotubes nanotubes which have been subjected to energy, plasma, chemical, or mechanical treatment. The present invention also relates to a field emission cathode comprising carbon nanotubes which have been subject to such treatment. A method for treating the carbon nanotubes and for creating a field emission cathode is also disclosed. A field emission display device containing carbon nanotube which have been subject to such treatment is further disclosed.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: June 14, 2011
    Assignee: Hyperion Catalysis International, Inc.
    Inventors: Mikio Takai, Alan B. Fischer, Chunming Niu, Howard G. Tennent, Robert Hoch, Hans Biebuyck
  • Patent number: 7960903
    Abstract: An electron emission source-forming composition includes a carbon-based material; a vehicle composed of a resin component and a solvent component; and at least one metal oxide with an average particle diameter in a range of 100 to 1,000 nm selected from Al2O3, TiO2, and SiO2. The electron emission source-forming composition is sintered under an air atmosphere during electron emission source formation. Therefore, carbon deposits after sintering and degradation of Carbon Nano-Tubes (CNTs) upon sintering can be remarkably reduced. As a result, the electron emission source formed using the composition has a high current density and the electron emission device using the electron emission source exhibits enhanced reliability.
    Type: Grant
    Filed: February 27, 2006
    Date of Patent: June 14, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Mee-Ae Ryu, Jong-Hwan Park, Jae-Sang Ha, Jeong-Hee Lee
  • Patent number: 7952265
    Abstract: An electron-emitting device, comprising: a pair of device electrodes formed on an insulating substrate; and a conductive film formed to connect the device electrodes and having an electron-emitting portion, wherein the conductive film has a thickness of 3 nm to 50 nm and is made of precious metal and oxide of base metal, a percentage of the base metal among metals contained in the conductive film is 30 mol % or more, and the conductive film has a concentration gradient of the oxide of the base metal in a thickness direction.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: May 31, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takashi Iwaki, Tsuyoshi Ibe, Masahiro Terada
  • Publication number: 20110101846
    Abstract: A field emission electron source having carbon nanotubes includes a CNT string and a conductive base. The CNT string has an end portion and a broken end portion. The end portion is contacted with and electrically connected to the surface of the conductive base. The CNTs at the broken end portion form a tooth-shape structure, wherein some CNTs protrude and higher than the adjacent CNTs. Each protruded CNT functions as an electron emitter.
    Type: Application
    Filed: November 27, 2010
    Publication date: May 5, 2011
    Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: YANG WEI, ZHUO CHEN, LIANG LIU, SHOU-SHAN FAN
  • Patent number: 7919911
    Abstract: By making Nd concentration in the tunneling insulating film 11 smaller than Nd concentration in the base electrode first layer 16, the accumulated electric charge amount in the tunneling insulating film 11 is reduced and afterimage is decreased. By setting a relation between a position of a stack interface of the base electrode 13 and a thickness of an insulating layer properly, the generation of a device defect is prevented.
    Type: Grant
    Filed: May 20, 2008
    Date of Patent: April 5, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Mutsumi Suzuki, Masakazu Sagawa, Toshiaki Kusunoki
  • Patent number: 7915799
    Abstract: A field emission lamp generally includes a bulb having an open end, a lamp head disposed at the open end of the bulb, an anode, and a cathode. The anode includes an anode conductive layer formed on an inner surface of the bulb, a fluorescent layer deposited on the anode conductive layer, and an anode electrode electrically connected with the anode conductive layer and the lamp head. The cathode includes an electron emission element and a cathode electrode electrically connected with the electron emission element and the lamp head. The electron emission element has an electron emission layer. The electron emission layer includes getter powders therein to exhaust unwanted gas in the field emission lamp, thereby ensuring the field emission lamp with a high degree of vacuum during operation thereof. A method for making such field emission lamp is also provided.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: March 29, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Li Qian, Liang Liu, Peng Liu, Jie Tang, Yang Wei, Shou-Shan Fan
  • Patent number: 7911125
    Abstract: An electron emission device having a high electron emitting rate and a display including the device are provided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.
    Type: Grant
    Filed: August 25, 2006
    Date of Patent: March 22, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Byung Gyu Chae, Kwang-Yong Kang, Yoon Ho Song
  • Patent number: 7902734
    Abstract: An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 ?A or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: March 8, 2011
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiyuki Yamamoto, Natsuo Tatsumi, Yoshiki Nishibayashi, Takahiro Imai