Abstract: A method for the production of a transparent conductor deposit on a substrate, the method comprising: providing a substrate formed from a first material; depositing a film of a second material on the substrate; causing the film to crack so as to provide a plurality of recesses; depositing a conductive material in the recesses; and removing the film from the substrate so as to yield a transparent conductive deposit on the substrate.

Abstract: A cold cathode electron emission device activating electron emission applying an external electric field is provided, in which an inversion layer inverting the type of a semiconductor layer by an external electric field is generated to form a shallow channel, and an electron beam due to a number of electrons is emitted by an avalanche breakdown in the shallow channel. A single or plurality of active regions are formed in the upper portion of the semiconductor substrate in fabrication and then an inversion layer is formed by the external electric field. The cold cathode electron emission device is driven according to the principle that a number of electrons are emitted by the avalanche breakdown in the inversion layer. Thus, since the high-density electrons are instantaneously emitted at the inversion layer by the external electric field, a preheating is not required.

Abstract: In a vacuum tube oscillscope for storing and reproducing electric signals, two matrices of charge transfer devices (CTDs) register and then reproduce the electric signals on a display screen. The two CTDs (21, 22) are juxtaposed at their sensitive areas (23, 24) without any interruption in accordance with a boundary which is substantially perpendicular to the time base deflection. The CTDs are scanned in accordance with trace and retrace write scan sequences. This facilitates reproducing the electric signals with pre-triggering.

Abstract: An electrodeless low-pressure gas discharge lamp includes a glass lamp vessel (1) which is provided with a sealing member (6) connected to the wall of the lamp vessel by means of a suitable sealing material, and which has on its inner wall a conductive layer (7), at least part of which is transparent, that extends beyond the connection to the sealing member (6), the member being slightly recessed into the lamp vessel. The inner conductive layer can thus be connected in a simple manner to an electrical conductor, which during operation of the lamp is connected, for example, to one of the supply wires of the mains.

Abstract: Insulating crystals are coated on a metal mesh of a storage tube and give rise to a hysteresis effect with respect to the passage of flood electrons through the metal mesh, the hysteresis effect being caused by the persistent polarization of the insulating crystals when an electric field has been applied and the depolarization of the crystals due to the irradiation of an electron beam having an energy which is large enough to penetrate through the negative field produced by the persistent polarization. The clean surface of the insulating crystals, which contains recombination centers of electrons and holes and the deep traps of electrons and holes, is an essential feature of the insulating crystals and are necessary for the hysteresis effect with respect to the passage of the flood electrons through the metal mesh.

Abstract: A storage target is disclosed for use in a scan converter storage tube, direct view storage tube, etc. Included are a storage substrate in the form of a single crystal of sapphire, and a collector electrode in the shape of a directional pattern on a storage surface of the storage substrate. In order to afford a high writing speed the directional pattern of the collector electrode is oriented at an angle ranging from -45 degrees to +45 degrees with respect to the projection of the c axis of the single sapphire crystal on the storage surface of the substrate. The collector electrode is preferably in the form of electrically interconnected parallel stripes extending in the direction of the projected c axis.

Abstract: A flat storage cathode ray tube with enhanced brightness is described. A mesh collector and a dielectric storage site array form an integral part of a silicon wafer. The silicon wafer includes thereon an addressable array of field effect transistors having a field effect transistor associated with a dielectric storage site in the storage site array for controlling a writing of the dielectric storage site. The addressable array of transistors works in cooperation with a flooding electron gun to effect selective writing of the storage site array. The enhanced brightness cathode ray tube may be adapted for use in a projection display.

Abstract: In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.

Abstract: A target for electronic storage tubes of the non-direct viewing type having a target comprised of substantially coplanar insulating and conducting areas wherein the insulating area is provided on one face of the conducting area in a predetermined and preferably striped pattern. The insulating pattern is comprised of at least a layer of ionizing radiation insensitive material taken from the group of materials comprised of silicon nitride, silicon oxynitride, aluminum oxide.

Abstract: A charge storage tube includes a target comprising a semiconductor substrate, an insulating layer formed on the semiconductor substrate and a metal electrode formed on the insulating layer, wherein a target potential of the target can be changed so that it becomes not only below a first cross-over potential but also over the first cross-over potential. In the charge storage tube, a signal is written in the target by a signal writing means to generate pairs of electron-hole in the target, a surface potential of the insulating layer with the written signal is changed so as to become over the first cross-over potential, and the written signal is read out by scanning electron beams on the target.

Abstract: A target structure for electronic storage tubes which is of the "coplanar grid" type. The target comprises a conducting layer which in a preferred configuration has slender elongated pedestals supporting elongated spaced parallel insulating strips which serve as the coplanar grid. The spaces between adjacent edges of insulating strips expose regions of the conducting layer to enable an electron beam to contact the exposed regions of the conducting layer. The pedestals support the insulating strips a spaced distance above the exposed regions of the conducting layer to form "vacuum gaps" which serve to inhibit electrical charge on the surfaces of the insulating strips from transferring to the interface between each strip and the vacuum gap. The pedestals may be an integral part of the conducting layer or may be formed from an insulating material. Methods for producing the novel target are described.

Abstract: A memory device and method is disclosed wherein positions of ions associated with a film are varied locally with respect to the film's surface by an electric field. A writing and erasing field is created by voltage modulating the film's conducting substrate in syncronization with low intensity electron bombardment of a local area of the film's surface by a scanning electron beam.The ion's position in the film varies the film's surface potential and alters the angular distribution imparted by its surface to primary diffracted and secondary emitted electrons. In the invention's read mode a scanning electron beam, combined with a detector discriminator, analyzes these emitted electrons to determine the surface potential at each address on the film thus reading out data stored in the film. A second means of reading out stored information utilizing detection of low energy electrons selectively diffracted by ions near the film's surface is disclosed.