With Tangential Fluent Material Supply Patents (Class 315/111.11)
  • Patent number: 11495602
    Abstract: Embodiments of the present disclosure provide a method and a device for determining a fabrication chamber. According to a current radio frequency power time of each of the fabrication chambers corresponding to adjacent process steps and service phases divided based on a service period of the fabrication chambers, a service phase is determined for the current radio frequency power time of each of the fabrication chambers. For target objects processed by the fabrication chambers in the current process step, fabrication chambers for the target objects to enter in a next process step are directly determined according to the service phase of the current radio frequency power time of each of the fabrication chambers.
    Type: Grant
    Filed: January 12, 2022
    Date of Patent: November 8, 2022
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Zhenxing Li, Yuming Wang, Fang Wang, San-Chen Chen, Chen-Hua Shen
  • Patent number: 9865437
    Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: January 9, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Bonnie T. Chia, Cheng-Hsiung Tsai
  • Patent number: 8994270
    Abstract: The present disclosure provides for a plasma system. The plasma system includes a plasma device, an ionizable media source, and a power source. The plasma device includes an inner electrode and an outer electrode coaxially disposed around the inner electrode. The inner electrode includes a distal portion and an insulative layer that covers at least a portion of the inner electrode. The ionizable media source is coupled to the plasma device and is configured to supply ionizable media thereto. The power source is coupled to the inner and outer electrodes, and is configured to ignite the ionizable media at the plasma device to form a plasma effluent having an electron sheath layer about the exposed distal portion.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: March 31, 2015
    Assignee: Colorado State University Research Foundation
    Inventors: Il-Gyo Koo, Cameron A. Moore, George J. Collins, Jin-Hoon Cho
  • Patent number: 8928229
    Abstract: A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: January 6, 2015
    Assignee: COMET Technologies, USA, Inc.
    Inventor: Gerald E. Boston
  • Patent number: 8803424
    Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A detector circuit may be configured to sense the AC process signal and output a DC magnitude error signal and a DC phase error signal. A controller may be coupled to the detector circuit and the RF matching network and configured to receive the DC magnitude and phase error signals and to vary an impedance of the RF matching network in response to the DC magnitude and phase error signals.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: August 12, 2014
    Assignee: COMET Technologies USA, Inc.
    Inventor: Gerald E. Boston
  • Publication number: 20140210344
    Abstract: The present invention provides a system that includes a glow discharge cell and a plasma arc torch. A first valve is connected to a wastewater source. An eductor has a first inlet, a second inlet and an outlet, wherein the first inlet is connected to the outlet of the electrically conductive cylindrical vessel, the second inlet is connected to the first valve, and the outlet is connected to the tangential inlet of the plasma arc torch. A second valve is connected between the tangential outlet of the plasma arc torch and the inlet of the glow discharge cell, such that the plasma arc torch provides the electrically conductive fluid to the glow discharge cell and the glow discharge cell provides a treated water via the outlet centered in the closed second end.
    Type: Application
    Filed: March 17, 2014
    Publication date: July 31, 2014
    Applicant: Foret Plasma Labs, LLC
    Inventor: Todd Foret
  • Patent number: 8773019
    Abstract: A RF power supply system for delivering periodic RF power to a load. A power amplifier outputs a RF signal to the load. A sensor measures the RF signal provided to the load and outputs signals that vary in accordance with the RF signal. A first feedback loop enables control the RF signal based upon power determined in accordance with output from the sensor. A second feedback loop enables control the RF signal based upon energy measured in accordance with signals output from the sensor. Energy amplitude and duration provide control values for varying the RF signal. The control system and techniques are applicable to both pulsed RF power supplies and in various instances to continuous wave power supplies.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: July 8, 2014
    Assignee: MKS Instruments, Inc.
    Inventors: David J. Coumou, Richard Pham
  • Patent number: 8729805
    Abstract: A plasma generator has a first member 2 containing a dielectric material, and an electrode group composed of a plurality of electrodes and including a first assembly 6 partially including a plurality of electrodes and a second assembly 7 partially including a plurality of electrodes. In accordance with an AC voltage, the first assembly 6 generates a plasma in a first space 23 contacting the first member 2. In accordance with a DC voltage, the second assembly 7 generates an electric field in a second space 24 contacting the first member 2 and communicating with the first space 23. At least one or more electrodes of a portion of the first assembly 6 and at least one or more electrodes of a portion of the second assembly 7 are provided on the surface of or in the inside of the first member 2.
    Type: Grant
    Filed: January 19, 2009
    Date of Patent: May 20, 2014
    Assignee: Kyocera Corporation
    Inventors: Takashige Yagi, Hiroshi Makino, Shingo Sato
  • Patent number: 8729804
    Abstract: A switching module capable of adjusting a visual angle is disclosed. The switching module includes an edge-type optical substrate, a light source disposed by a side of the edge-type optical substrate, and an optical modulating component disposed between the light source and the edge-type optical substrate. The edge-type optical substrate has an emitting surface. The light source includes a plurality of light units. Each light unit can emit a beam to the edge-type optical substrate according to a predetermined angle. The optical modulating component can modulate divergence of the beam emitted from the light unit, so that the beam can be guided out of the edge-type optical substrate via the emitting surface according to the predetermined angle.
    Type: Grant
    Filed: August 20, 2012
    Date of Patent: May 20, 2014
    Assignee: Wistron Corporation
    Inventors: Chung-Hao Tien, Yu-Lin Tsai, Szu-Fen Chen, Hui-Chen Lin, Meng-Chao Kao
  • Patent number: 8674607
    Abstract: There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: March 18, 2014
    Assignee: Tokyo Electron Limited
    Inventor: Hachishiro Iizuka
  • Patent number: 8610356
    Abstract: An iodine fueled plasma generator system includes a plasma generator. At least one storage vessel is configured to store condensed phase iodine therein. A heating device proximate to the storage vessel is configured to create iodine vapor from the condensed phase iodine. A propellant management subsystem is configured to deliver the iodine vapor to the plasma generator. A feedback control subsystem is responsive to one or more of plasma generator discharge current, the pressure of the iodine vapor, and/or the temperature of the iodine vapor configured to regulate the flow rate of the iodine vapor to the plasma generator.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: December 17, 2013
    Assignee: Busek Co., Inc.
    Inventors: James J. Szabo, Jr., Bruce Pote, Surjeet Paintal, Michael Robin, Vladimir Hruby
  • Patent number: 8154206
    Abstract: There is provided a small-sized portable microwave plasma generator capable of generating plasma at atmospheric pressure with low electric power including a coaxial cable, an outer conductor, a connection conductor, and a connection member. The coaxial cable includes a first inner conductor and a dielectric material encircling the first inner conductor. The outer conductor encircles the coaxial cable. The connection conductor includes at least one gas inlet tube. The connection conductor electrically connects between the first inner conductor and the outer conductor at one end of the coaxial cable. The connection member includes a second inner conductor passing through the outer conductor and then connecting to the first inner conductor.
    Type: Grant
    Filed: February 4, 2009
    Date of Patent: April 10, 2012
    Assignees: Postech Foundation, Postech Academy Industry Foundation
    Inventors: Jun Choi, Felipe Iza, Jae Koo Lee
  • Patent number: 8143790
    Abstract: A method for producing light includes introducing an ionizable medium for generating a plasma into a chamber. The method also includes applying at least one pulse of energy to a magnetic core that surrounds a portion of a plasma discharge region within the chamber such that the magnetic core delivers power to the plasma which forms a secondary of a transformer according to Faraday's law of induction. The plasma has a localized high intensity zone.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: March 27, 2012
    Assignee: Energetiq Technology, Inc.
    Inventors: Donald K. Smith, Stephen F. Horne, Matthew M. Besen, Paul A. Blackborow
  • Patent number: 8063337
    Abstract: An apparatus for use in mass spectrometry comprising an injector body, an injection tube coupled to the injector body, and a shielding assembly disposed between the injector body and the injection tube. The shielding apparatus is suitable for shielding the injector body from heat generated by a plasma source.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: November 22, 2011
    Assignee: Elemental Scientific, Inc.
    Inventor: Daniel R. Wiederin
  • Patent number: 8030849
    Abstract: A device and a method for generating a truly pulsed plasma flow are disclosed. The device includes a cathode assembly comprising a cathode and a cathode holder, an anode, and two or more intermediate electrodes, the anode and the intermediate electrodes forming a plasma channel expanding toward the anode. The intermediate electrode closest to the cathode may form a plasma chamber around the cathode tip. An extension nozzle forming an extension channel having a tubular insulator along at least a portion of its interior surface is affixed to the anode end of the device. During operation, a voltage is applied between the cathode and the anode and a current is passed through the cathode, the plasma, and the anode. The voltage and current profiles are selected to cause the rapid development of a plasma flow with required characteristics. A substantially uniform temperature and power density distribution of the plasma pulse is achieved in the extension nozzle.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: October 4, 2011
    Assignee: Plasma Surgical Investments Limited
    Inventor: Nikolay Suslov
  • Patent number: 7795818
    Abstract: A microwave plasma generator in which the generating amount of radicals can be regulated easily with higher reaction efficiency while reducing gas consumption. The microwave plasma generator comprises an outer conductor (2), an inner conductor (3) arranged in the internal space (4) of the outer conductor, a discharge tube (7) having a double tube structure consisting of an inner tube (5) and an outer tube (6) and penetrating the outer and inner conductors in the axial direction, and a cavity (1) having a means for adjusting the position of the inner tube to the outer tube in the axial direction in the discharge tube.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: September 14, 2010
    Assignee: Adtec Plasma Technology Co., Ltd.
    Inventors: Takuya Urayama, Kazunari Fujioka, Masahiko Uchiyama
  • Patent number: 7701145
    Abstract: An improved solid expellant plasma generator has been developed. The plasma generator includes a support housing, an electrode rod located in the central portion of the housing, and a mass of solid expellant material that surrounds the electrode rod within the support housing. The electrode rod and the solid expellant material are made of separate materials that are selected so that the electrode and the solid expellant material decompose at the same rate when the plasma generator is ignited. This maintains a point of discharge of the plasma at the interface between the electrode and the solid expellant material.
    Type: Grant
    Filed: September 7, 2007
    Date of Patent: April 20, 2010
    Assignee: NeXolve Corporation
    Inventors: Nobie H. Stone, Garrett D. Poe, Robert Rood
  • Patent number: 7589473
    Abstract: A device and a method for generating a truly pulsed plasma flow are disclosed. The device includes a cathode assembly comprising a cathode and a cathode holder, an anode, and two or more intermediate electrodes, the anode and the intermediate electrodes forming a plasma channel expanding toward the anode. The intermediate electrode closest to the cathode may form a plasma chamber around the cathode tip. An extension nozzle forming an extension channel having a tubular insulator along at least a portion of its interior surface is affixed to the anode end of the device. During operation, a voltage is applied between the cathode and the anode and a current is passed through the cathode, the plasma, and the anode. The voltage and current profiles are selected to cause the rapid development of a plasma flow with required characteristics. A substantially uniform temperature and power density distribution of the plasma pulse is achieved in the extension nozzle.
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: September 15, 2009
    Assignee: Plasma Surgical Investments, Ltd.
    Inventor: Nikolay Suslov
  • Patent number: 7368876
    Abstract: A low-cost plasma processing apparatus which permits reduction of the cost, as well as reduction of the loss of transmitted power. The plasma processing apparatus 1 has an apparatus main body 2 and auxiliary equipment 3. The auxiliary equipment 3 is comprised of a power supply apparatus 5 that supplies power to a processing chamber 4, and a plurality of dry pumps 6 and 7, and so on. The power supply apparatus 5 is comprised of a matching unit 9, an RF amplifier 13 that is connected to the matching unit 9 via a coaxial cable 24, and a power controller 12 having a DC amplifier 14 therein. The RF amplifier 13 is formed in a separate body to the DC amplifier 14 and disposed in a position away from the DC amplifier 14 and close to the matching unit 9, and is connected to the DC amplifier 14 via an ordinary cable 25.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: May 6, 2008
    Assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba
    Inventors: Toshihiro Hayami, Etsuji Ito, Itsuko Sakai
  • Patent number: 7193369
    Abstract: A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: March 20, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Min Min, Dae-Kyu Choi, Do-In Bae, Yun-Sik Yang, Wan-Goo Hwang, Jin-Man Kim
  • Patent number: 7109660
    Abstract: A plasma processing device is able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and consists of a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: September 19, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Hiroyuki Ishihara, Youichi Araki, Toshiki Takahashi, Takuya Kubo, Atsushi Ito, Yoko Ono
  • Patent number: 6534921
    Abstract: A method of removing metal-containing polymeric material and ion implanted or plasma damaged photoresist from a surface using a plasma jet system, by generating radicals having high energy and high density from atmospheric plasma by introducing a reactant gas to the plasma, and placing the surface at a distance from the plasma, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: March 18, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Hun Seo, Kyeong-Koo Chi, Ji-Soo Kim, Chang-Woong Chu, Seung-Pil Chung
  • Publication number: 20020149317
    Abstract: The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber having an electrode for exciting a plasma, a radiofrequency generator connected to the electrode, and an impedance matching circuit for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.
    Type: Application
    Filed: September 20, 2001
    Publication date: October 17, 2002
    Inventors: Akira Nakano, Tadahiro Ohmi
  • Publication number: 20020101167
    Abstract: A plasma reactor for processing a semiconductor workpiece, includes a vacuum chamber including a side wall and an overhead ceiling, a wafer support pedestal within the vacuum chamber, gas injection passages to the interior of the vacuum chamber coupled to a process gas supply, and a first RF power source for applying RF power to the wafer support pedestal for generating a capacitively coupled plasma. It further includes plural electromagnets near said chamber, and a time-varying current source connected to said plural electromagnets for producing a magnet field that rotates relative to said wafer pedestal. An inductive plasma source power applicator is provided near said chamber and a second RF power source is provided for applying RF power to said inductive plasma source power applicator for generating an inductively coupled plasma within said chamber.
    Type: Application
    Filed: September 28, 2001
    Publication date: August 1, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Hongqing Shan, Mahmoud Dahimene, Kenny L. Doan
  • Patent number: 6420699
    Abstract: Apparatus for altering translational velocity of molecules in a gas. A source of gas is in fluid communication with a supersonic nozzle. The nozzle is disposed on an arm at a selected distance from an axis for rotation about the axis. The nozzle has an exit portion substantially perpendicular to the arm. Motive apparatus rotates the arm so that the translational velocity of molecules with respect to a laboratory frame of reference is altered. In a preferred embodiment, gas flows from the source through the axis and the arm to exit from the nozzle.
    Type: Grant
    Filed: September 29, 1999
    Date of Patent: July 16, 2002
    Assignee: President and Fellows of Harvard College
    Inventors: Dudley R. Herschbach, Manish Gupta
  • Publication number: 20020047536
    Abstract: The invention provides a plasma processing apparatus, in which the uniformity of the plasma density can be improved, and the electron temperature can be kept low. A vacuum vessel 21 for generating a plasma includes an upper vessel 22 that is dome-shaped and formed in one seamless piece, and a lower vessel 23 fastened tightly on a lower aperture portion 24 of the upper vessel 22 with a sealing member. The plasma processing apparatus is provided with a supply port 26 for supplying gas to the vacuum vessel 21 and an exhaust port 34 for exhausting gas. An electrode 29 for applying high-frequency power to ionize the gas is provided not in the vacuum vessel 21 but in ring-shape outside the vacuum vessel 21. On the outer side of this tubular electrode 29, a pair of tubular magnets 30 are provided, which form magnetic force lines that intersect perpendicularly with the electric field.
    Type: Application
    Filed: January 10, 2001
    Publication date: April 25, 2002
    Inventors: Unryu Ogawa, Takayuki Sato
  • Publication number: 20010005117
    Abstract: A high-voltage discharge lamp has a bulb made of quartz glass, a pair of electrodes and molybdenum foils, wherein the pair of electrodes are arranged so as to oppose each other and are joined to respective ones of the molybdenum foils, and the bulb and molybdenum foils are hermetically sealed at seal portions of the bulb. The joints between the pair of electrodes and the respective molybdenum foils are covered by cylindrical members having slits on an outer surface and/or an inner surface thereof.
    Type: Application
    Filed: December 21, 2000
    Publication date: June 28, 2001
    Inventors: Kazuhisa Nishida, Yasushi Aoki