Abstract: The present disclosure, calculating an impedance change considering a reflected wave due to IMD, provides an impedance matching device for performing impedance matching between a source power supply side and a load side, including: a detector that detects a forward wave power supplied from the source power supply and a reflected wave power from the load and outputs a forward wave voltage as a component of the forward wave power and a reflected wave voltage as a component of the reflected wave power, an impedance information output part that calculates impedance from the forward wave voltage and the reflected wave voltage, and a matching part that performs matching operation based on an impedance value supplied from the impedance information output part. The impedance information output part complexifies each of the forward wave voltage and the reflected wave voltage to calculate an impedance value to generate an impedance locus.

Abstract: A stage includes a base and an electrostatic chuck provided on the base and including N electrodes in the electrostatic chuck, where N is an integer greater than or equal to two. The stage a power supply configured to apply voltages of different N-phases to the respective N electrodes. Each of the voltages has a positive level and a negative level that periodically alternate. A center line of an electrode gap provided between adjacent electrodes is represented by x=x=r·cos(?+2?(n?1)/N) and y=r·sin(?+2?(n?1)/N).

Abstract: There is included a process container; a gas supply system; and a coil provided with a section between a first grounding point and a second grounding point of the coil so as to be spirally wound a plurality of times along an outer periphery of the process container, wherein the coil is configured so that a coil separation distance, which is a distance from an inner periphery of the coil to an inner periphery of the process container, in a partial section of a first winding section, which is a section where the coil winds once along the outer periphery of the process container in a direction from the first grounding point toward the second grounding point, is longer than a coil separation distance in another partial section of the first winding section continuous with the partial section of the first winding section.

Abstract: A plasma processing apparatus includes a chamber, a substrate support including a bottom electrode, and a top electrode assembly disposed above the substrate support. The top electrode assembly includes a top electrode plate and a thermally conductive plate disposed above the top electrode plate. The top electrode assembly includes a coolant flow path disposed within the thermally conductive plate. The top electrode assembly includes at least one heating element thermally connected to the thermally conductive plate, the heating element being disposed at a location that does not overlap the coolant flow path in a height direction of the plasma processing apparatus. The plasma processing apparatus includes a controller that controls at least one among a coolant flowing through the coolant flow path and the heating element, based on a temperature of the top electrode plate detected by a temperature sensor, to adjust the temperature of the top electrode plate.

Abstract: A plasma apparatus of a plasma processing system is provided. The plasma apparatus defines a toroidal plasma channel and includes multiple end blocks defining respective portions of the toroidal plasma channel. Each end block includes an end-block tube constructed from a first electrically conductive material and a dielectric coating disposed on an interior surface of the end-block tube. The plasma apparatus also includes multiple mid-blocks defining respective portions of the toroidal plasma channel. Each mid-block includes at least one heat sink located adjacent to a substantially linear tube with a thermal interface disposed therebetween. The thermal interface is in physical communication with the tube and the at least one heat sink. The mid-block tube has a substantially uniform wall thickness and is constructed from a dielectric material. The at least one heat sink is constructed from a second electrically conductive material.

Abstract: This invention is an antenna structure inducing plasma in a chamber with applied alternative power, comprising: a first antenna segment and a second antenna segment arranged based on a virtual central axis to have a first curvature radius and a second curvature radius respectively, the central axis crossing a first plane, and a first capacitive load electrically connecting the first antenna segment and the second antenna segment, wherein the first antenna segment extends from one end of the first capacitive load with the first curvature radius having a first length and the second antenna segment extends from other end of the first capacitive load with the second curvature radius having a second length, and wherein a sum of the first length and the second length is shorter than a circumference of the first curvature radius or the second curvature radius.

Abstract: A high-frequency power supply apparatus includes the following elements. A first power supply supplies first power to a load by outputting a first voltage whose fundamental frequency is higher than a second voltage output by a second power supply. A period signal generation circuit generates a period signal matching a frequency and a phase of the second voltage. A waveform control circuit generates a modulation signal for performing frequency modulation on a fundamental wave signal of the first voltage, and adjusts an output timing of the modulation signal in accordance with a timing of the period signal. The first power supply generates a first frequency signal by performing frequency modulation on the fundamental wave signal of the first voltage by using the modulation signal. The first power supply performs power amplification on the first frequency signal and outputs, to the load, the first frequency signal as first power.

Abstract: Embodiments disclosed herein include a method for field adjusting calibrating factors of a plurality of RF impedance matches for control of a plurality of plasma chambers. In an embodiment, the method comprises collecting and storing in a memory data from operation of the plurality of RF impedance matches, and finding a tune space for each of the plurality of RF impedance matches from the collected data. In an embodiment, the method further comprises finding adjustments to account for variability in each of the plurality of RF impedance matches, finding adjustments to variable tuning elements of the plurality of RF impedance matches to account for time varying and process related load impedances, and the method further comprises obtaining operating windows for the variable tuning elements in the plurality of RF impedance matches.

Abstract: A printer head for a three-dimensional printer includes a dielectric barrier discharge (DBD) disk configured to generate a plasma, where the DBD disk requires a high voltage alternating current (AC) voltage signal to generate the plasma. The printer head also includes a transformer assembly including a transformer and a housing that contains the transformer. The transformer is configured to transform an incoming AC voltage signal into the high voltage AC signal for the DBD disk. The printer head also includes an electrical wire that electrically connects the transformer to the DBD disk. The printer head also includes a wire guide defining a passageway, where a portion of the electrical wire is received by the passageway in the wire guide. The passageway of the wire guide is shaped to direct the electrical wire towards the DBD disk.

Abstract: The present disclosure is generally directed to a plasma sheet source and methods of using same. The plasma sheet source includes a cylindrical electrode having a conductive cylindrical core surrounded by a dielectric material, a plurality of channels configured to direct gas from a gas inlet to the electrode, and a plasma outlet positioned below the electrode. Gas is introduced to the plasma sheet source and directed toward the electrode, which when powered by pulsed direct current, produces plasma as the gas ionizes. The produced plasma is then directed out of the plasma outlet to a specimen for treatment of the specimen. Notably, the plasma exiting the plasma outlet is in the form of a plasma sheet that is at approximately room temperature.

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: Embodiments disclosed herein include a process power controller for a plasma processing tool. In an embodiment, the process power controller includes a process power source optimizer, a source predictor, and a process uniformity controller. In an embodiment, the source predictor is communicatively coupled to the process power source optimizer and the process uniformity controller.

Abstract: Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and impedance matching equipment used for generating a plasma in a plasma chamber during semiconductor processing therein. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for batch processing of a plurality of semiconductor wafers during the manufacturing process. Operational settings of a master plasma processing system may be used to control the operation of a plurality of slave processing systems. In addition, the operational settings of the master plasma processing system may be recorded and reused for controlling the plurality of slave processing systems.

Abstract: There is a plasma processing apparatus comprising: a chamber; a substrate support provided in the chamber, the substrate support including a bias electrode; a plasma generator configured to generate plasma from a gas in the chamber; and a bias power supply electrically connected to the bias electrode and configured to generate a sequence of a plurality of voltage pulses applied to the bias electrode, wherein each of the plurality of voltage pulses has a leading edge period in which the voltage pulse transitions from a reference voltage level to a pulse voltage level and a trailing edge period in which the voltage pulse transitions from the pulse voltage level to the reference voltage level, and at least one of a time length of the leading edge period and a time length of the trailing edge period is greater than 0 seconds and less than or equal to 0.5 microseconds.

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

Abstract: An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.

Abstract: One or more example relate, generally, to generating radio frequency (RF) signals. An apparatus may include a signal generator, an amplification stage, and a feedback control loop. The signal generator may generate a pulsed radio frequency (RF) signal at least partially responsive to a digital pulsed waveform defined by one or more commands. The amplification stage may amplify the pulsed RF signal. The feedback control loop may be coupled to the amplification stage to regulate a power level of respective steps of the pulsed RF signal.

Abstract: An ignition method in a plasma processing apparatus includes: applying a first radio frequency from a radio-frequency power supply to an electrode of a plasma generator, thereby igniting plasma from a gas, the radio-frequency power supply being capable of applying a radio frequency of a variably controlled frequency to the electrode of the plasma generator; and applying a second radio frequency different from the first radio frequency to the electrode of the plasma generator after a predetermined time is elapsed after applying the first radio frequency to the electrode of the plasma generator.

Abstract: A transparent light emitting device display comprising: a transparent substrate; a conductive metal pattern provided on the transparent substrate; a light emitting device provided on at least a part of the conductive metal pattern; a first transparent adhesive layer provided on the transparent substrate, the conductive metal pattern, and the light emitting device; a UV-cut film provided on the first transparent adhesive layer; and a second transparent adhesive layer provided on the UV-cut film.

Abstract: An active gas generation apparatus according to the present disclosure includes: a base flange having a central bottom surface region and a peripheral protruding part; a cooling plate provided on the peripheral protruding part of the base flange; an insulating plate provided between the cooling plate and the high voltage apply electrode part; and an electrode holding member provided on a lower surface of the cooling plate to support the high voltage apply electrode part from a lower side. Provided is a gas separation structure of separating a gas flow between an in-housing space and a discharge space by the cooling plate, the electrode holding member, and the high voltage apply electrode part.

Abstract: An array of non-thermal plasma emitters is controlled to emit plasma based on application of an electric current at desired frequencies and a controlled power level. A power supply for an array controller includes a transformer that operates at the resonant frequency of the combined capacitance of the array and the cable connecting the array to the power supply. The power into the array is monitored by the controller and can be adjusted by the user. The controller monitors reflected power characteristics, such as harmonics of the alternating current, to determine initiation voltage of the plasma and/or resonant frequency plasma emitters. The array of non-thermal plasma emitters may be used in therapeutic, diagnostic, and/or medical sanitization applications, including for treatment of infectious diseases using the disclosed protocols.

Abstract: A radio-frequency (RF) power supply apparatus includes a first power supply, a second power supply, and a matching device connected to the first/second power supplies. The first power supply supplies first RF power to a load by outputting first RF voltage with a first fundamental frequency. The second power supply supplies second RF power to the load by outputting second RF voltage with a second fundamental frequency lower than the first fundamental frequency. The matching device generates a clock signal with a frequency higher than the first fundamental frequency and provides the clock signal to the first power supply. The first power supply generates, by using the clock signal, a waveform signal with the same cycle as the second RF voltage. The first power supply performs, by using the clock signal, frequency modulation control on the first RF voltage to be output from the first power supply.

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supply system configured to supply a processing gas into the process chamber; a first plasma generator installed to be wound around an outer periphery of the process chamber and configured to generate plasma from the processing gas in the process chamber; and a second plasma generator installed at an upper portion of the process chamber to protrude toward an inside of the process chamber and configured to generate plasma from the processing gas in the process chamber.

Abstract: A plasma generating system generates plasma in a processing chamber. A controller is configured to: a) perform atomic layer deposition (ALD) N times to deposit film in a feature of the substrate; b) after performing a) M of the N times, supply an inhibitor plasma gas to the processing chamber and strike plasma in the processing chamber to create a passivated surface more on upper portions of the feature as compared to lower portions of the feature to inhibit the atomic layer deposition in the upper portions of the feature as compared to the lower portions of the feature; c) supply an etch gas to the processing chamber to etch the film more in the upper portions of the feature than in the lower portions in the feature of the substrate following b); and d) repeat a) to c) one or more times to gapfill the feature without voids.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first sensor operably connected to the input and a second sensor operably connected to the output and configured to measure impedance during operation, at least one variable capacitor connected to the first sensor and the second sensor and a controller, based on a measured impedance, configured to tune the at least one variable capacitor of the matching network to a first target position based on weighted output impedance values measured at pulse states of a voltage waveform and to tune the at least one variable capacitor to a second target position based on weighted input impedance values measured at the pulse states of the voltage waveform.

Abstract: A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.

Abstract: An ion source that is capable of different modes of operation is disclosed. A solid target may be disposed in the arc chamber. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may supply an organoaluminium gas. Ions having single charges may be created in the first mode, while ions having multiple charges may be created in the second mode. In some embodiments, the solid target may be retractable.

Abstract: A plasma engine includes a plasma source having a gas input for receiving a first molecular gas species and that generates ions at an output from the received first molecular gas species. An ion extractor positioned proximate to the output of the plasma source extracts ions from the plasma source with an electric field. A housing includes a region that receives ions extracted from the ion extractor, wherein at least some of the extracted ions react with a second molecular gas species present in the housing to generate thrust.

Abstract: An etching uniformity regulating device and method. The device comprises an inductor and a capacitor connected in parallel. One end of the etching uniformity regulating device is connected to a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. The purpose of controlling the edge electric field is achieved by regulating a capacitance of the capacitor, so as to regulate the etching rate of the edge, thereby achieving etching uniformity.

Abstract: A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.

Abstract: Embodiments described herein relate to apparatus for radio frequency (RF) grounding in process chambers. In one embodiment, a heater is disposed in a substrate support. The heater is surrounded by a ground shield assembly. The substrate support also includes a multi-zone electrode disposed therein. The multi-zone electrode includes one or more portions of an electrode disposed in a plane. One or more portions of a multi-zone ground plane are interposed with the one or more portions of the electrode. That is, the multi-zone ground plane and the multi-zone electrode are coplanar with the one or more portions of the electrode alternating with one or more portions of the multi-zone ground plane throughout a plane of the substrate support.

Abstract: Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.

Abstract: A disclosed plasma processing apparatus includes a chamber, a substrate support, a plasma generator, and first and second power sources. The first power source is configured to generate an electric bias and electrically connected to a lower electrode of the substrate support provided in the chamber. The second power source is configured to apply a positive voltage to a member in a first period that is a part of a whole period in which the electric bias output from the first power source to the lower electrode has a potential not less than an average potential of the electric bias within a cycle thereof. The member is disposed to be exposed to plasma generated in the chamber. The first power source is configured to output the electric bias having a positive potential to the lower electrode in a second period after the first period.

Abstract: An electrodeless plasma thruster with closed-ring-shaped gas discharge chamber (1, 10) can include a gas discharge chamber (1, 10) closed-ring-shaped in fluid communication with a propellant storage system (10, 70). An antenna (3, 30) can be positioned on the exterior of the gas discharge tube (1, 10). A guide tube (2, 20) can be coupled with the gas discharge chamber (1, 10) at a first end and have a second open end. A magnetic system (7, 50) can be positioned on the second end of the guide tube (2, 20). The magnetic system (7, 50) can be electrically coupled with a power supply. The power supply can be electrically coupled with a power converter (11, 80) and a control module.

Abstract: A disclosed plasma processing system 10 includes: a plasma processing apparatus 100 including a processing chamber 100a for plasma processing an object 400 to be processed, and at least one component 122, 131 which is at least partially disposed in the processing chamber 100a; a storage unit 301 for storing a recipe including a set value specifying a plasma processing condition; a tolerance determination unit 302 that determines a tolerance of the set value, based on a degree of deterioration of the at least one component 122, 131; and a recipe modification unit 303 that modifies the recipe such that the set value falls within the tolerance, when the set value is outside the tolerance.

Abstract: A coil-on-plug (COP) exciter includes a COP and a housing configured to be coupled to and positioned at least partially between the COP and an engine. The COP exciter also includes an electrode core positioned at least partially within the housing. The electrode core has a first end and a second end. The first end is configured to be coupled to the COP. The COP exciter also includes an electrode tip configured to be coupled to the second end of the electrode core. A voltage is conducted from the COP, through the electrode core, and to the electrode tip, which generates a spark that is configured to energize a first propellant to start the engine.

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

Abstract: Some embodiments of the invention include a thruster system comprising a thruster and a pulsing power supply. The thruster may include a gas inlet port; a plasma jet outlet; and a first electrode. In some embodiments, the pulsing power supply may provide an electrical potential to the first electrode with a pulse repetition frequency greater than 10 kHz, a voltage greater than 5 kilovolts. In some embodiments, the pressure downstream from the thruster can be less than 10 Torr. In some embodiments, when a plasma is produced within the thruster by energizing a gas flowing into the thruster through the gas inlet port, the plasma is expelled from the thruster through the plasma jet outlet.

Abstract: There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Abstract: Disclosed is a method and apparatus for utilizing a variable gain algorithm for adjusting a capacitor in an automatic radio frequency (RF) impedance matching network. The apparatus may operate in a closed-loop feedback control system, with one or more error signals driving the capacitors within the system. To achieve a critically damped control system response, multiple operating regions for the matching network and its constituent elements may be identified and a set of gains (e.g., different per region) may be applied to the error signals in the control system when operating in those regions. An operating region may be defined by characteristics of the input signals measured by the apparatus, calculated by the apparatus, or the state of the apparatus itself. These features may be arranged in a look up table (or determined by calculation) for the apparatus to use to determine the variable gains in the system.

Abstract: Some embodiments include a nanosecond pulser circuit. In some embodiments, a nanosecond pulser circuit may include: a high voltage power supply; a nanosecond pulser electrically coupled with the high voltage power supply and switches voltage from the high voltage power supply at high frequencies; a transformer having a primary side and a secondary side, the nanosecond pulser electrically coupled with the primary side of the transformer; and an energy recovery circuit electrically coupled with the secondary side of the transformer. In some embodiments, the energy recovery circuit comprises: an inductor electrically coupled with the high voltage power supply; a crowbar diode arranged in parallel with the secondary side of the transformer; and a second diode disposed in series with the inductor and arranged to conduct current from a load to the high voltage power supply.

Abstract: Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

Abstract: A device cold plasma sterilization includes a housing, a base, a conveying assembly, a plurality of core modules, a transformer, a control cabinet, a distribution box, a shielding door, and a controller. The housing is disposed on the base. The plurality of core modules is disposed in the housing along a moving direction of the conveying assembly and are spaced apart from each other. The plurality of core modules each include a plurality of electrode assemblies spaced from one another by equal distance and arranged in a row. The transformer, the control cabinet, and the distribution box are disposed in a lower part of the base and are connected to the plurality of electrode assemblies. The conveying assembly is disposed in a middle part of the base. The base includes an inlet for entry and an outlet for exit of a package to be sterilized.

Abstract: An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.