Abstract: A solar panel cleaning device includes a solar panel having a plurality of photovoltaic cells arranged in rows and embedded in the solar panel with space between the rows. A transparent dielectric overlay is affixed to the solar panel. A plurality of electrode pairs each of which includes an upper and a lower electrode are arranged on opposite sides of the transparent dielectric and are affixed thereto. The electrodes may be transparent electrodes which may be arranged without concern for blocking sunlight to the solar panel. The solar panel may be a dielectric and its dielectric properties may be continuously and spatially variable. Alternatively the dielectric used may have dielectric segments which produce different electrical field and which affects the wind “generated.

Abstract: An antenna unit for generating a plasma includes: a first antenna including a first incoming portion and a plurality of first sub-antennas divided from the first incoming portion; and a second antenna including a second incoming portion and a plurality of second sub-antennas divided from the second incoming portion, the first and second incoming portions constituting a coaxial line.

Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A detector circuit may be configured to sense the AC process signal and output a DC magnitude error signal and a DC phase error signal. A controller may be coupled to the detector circuit and the RF matching network and configured to receive the DC magnitude and phase error signals and to vary an impedance of the RF matching network in response to the DC magnitude and phase error signals.

Abstract: An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit.

Abstract: Systems and methods for compensating for harmonics produced during plasma processing in a plasma chamber are described. One of the methods includes retrieving a measurement of a combined waveform. The combined waveform includes a fundamental waveform and a harmonic waveform. The combined waveform defines a voltage proximate to a surface of a chuck, which is coupled to a radio frequency (RF) transmission line. The RF transmission line is coupled to an impedance matching circuit. The impedance matching circuit is coupled to an RF generator. The method further includes extracting the fundamental waveform from the combined waveform, determining a difference between a magnitude of the combined waveform and a magnitude of the fundamental waveform, and controlling the RF generator to compensate for the difference.

Abstract: Disclosed is a method for enabling flexibility of the exoskeletons or joints of aquatic organisms immersed in an ion liquid water solution to be maintained without destroying their original forms by reducing the difference in osmotic pressure between the inside and outside of the aquatic organisms, preventing dehydration of biological samples. First, the aquatic organism is put into a low-concentration ionic liquid to increase continuously the concentration of the ionic liquid, enabling the water content of the aquatic organism to be substituted by a high-concentration ionic liquid in their original forms. The use of the increasing method that gentle increase in temperature of the ionic liquid by means of natural seasoning reduces the osmotic pressure difference between the inside and outside of the aquatic organism, increasing the concentration of the ionic liquid inside of the aquatic organism.

Abstract: An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.

Abstract: An extreme ultraviolet light (EUL) source device is disclosed, the device comprising: a chamber in which a gas flow and a droplet stream are provided; a droplet generator through which target material is changed into the droplet stream; and a shroud positioned along the droplet stream, the shroud shielding the droplet stream from the gas flow, wherein the droplet stream is irradiated by laser to produce plasma and generate an extreme ultraviolet light. The shroud includes flow guide surface features that guide accumulated target material away from a collector mirror that reflects and focuses the EUL.

Abstract: An electromagnetic-radiation power-supply mechanism includes a microwave power introduction port provided on the side of the coaxial waveguide, a power line being connected to the microwave power introduction port; and a power supply antenna for radiating the electromagnetic wave power into the waveguide, the power supply antenna being connected to the power line. The power supply antenna includes an antenna body having a first pole connected to the power line and a second pole connected to an inner conductor of the waveguide; and a ring-shaped reflection portion extending from opposite sides of the antenna body.

Abstract: A hardware interlock system for monitoring operation of RF plasma sources. The hardware interlock system includes an RF generator operative to transmit a forward RF power used to generate plasma in a plasma chamber. A derivative based hardware interlock circuit is coupled in series with the RF generator. The derivative based hardware interlock circuit determines a reflected RF power derivative value indicative of the speed of change in reflected RF power values in the RF plasma ion source. An analog/digital (A/D) logic circuit is coupled with the derivative based hardware interlock circuit. The A/D logic circuit can shut down the RF generator output when the reflected RF power derivative value exceeds a threshold.

Abstract: An apparatus for creating an EUV light may include a droplet-supplying unit, a laser-irradiating unit, a light-concentrating unit and a guiding unit. The droplet-supplying unit may supply a droplet from which the EUV light may be created. The laser-irradiating unit may irradiate a laser to the droplet supplied from the droplet-supplying unit to create the EUV light. The light-concentrating unit may concentrate the EUV light created by the laser-irradiating unit. The guiding unit may guide the droplet to a position at which the laser may be irradiated. The guiding unit may have at least one gas-spraying hole for spraying a gas to a space between the droplet-supplying unit and the laser irradiation position to form a gas curtain configured to surround the droplet.

Abstract: A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

Abstract: Controlling a phase and/or a frequency of a RF generator. The RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit controls the phase and/or the frequency of a RF generator.

Abstract: The disclosure includes a glow-discharge lamp including: an elongate casing transparent to illuminating radiation and containing a plasma gas; a device for applying an electric field for maintaining a plasma in the so-called positive column region of the casing, the device including two electrodes forming an anode and a cathode located in the casing at each end thereof; and a radio-frequency or microwave cathode plasma source arranged in the casing in relation to the cathode-forming electrode, such as to generate a high-frequency discharge located on the surface of the electrode in order to generate the plasma. The disclosure also includes a lighting method of such a glow-discharge lamp.

Abstract: Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods are disclosed. The plasma generation source (PGS) includes an enclosure body having multiple internal surfaces forming an internal chamber having input and output ports to respectively receive a precursor gas for generation of plasma and to discharge the plasma. A dielectric conduit assembly may guide the gas and the plasma away from the internal surface where particulates may be generated. The dielectric conduit assembly includes a first and second cross-conduit segments. The dielectric conduit assembly further includes parallel conduit segments extending from the second cross-conduit segment to distal ends which removably align with first cross-conduit interfaces of the first cross-conduit segment without leaving gaps. In this manner, the dielectric conduit assembly is easily serviced, and reduces and contains particulate generation away from the output port.

Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area.

Abstract: Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.

Abstract: Methods for processing a substrate in a plasma processing, chamber employing a plurality of RF power supplies. The method includes pulsing at a first pulsing frequency a first RF power supply to deliver a first RF signal between a high power state and a low power state. The method further includes switching the RF frequency of a second RF signal output by a second RF power supply between a first predefined RF frequency and a second RF frequency responsive to values of a measurable chamber parameter. The first RF frequency and the second RF frequencies and the thresholds for switching were learned in advance during a learning phase while the first RF signal pulses between the high power state and low power state at a second RF frequency lower than the first RF frequency and while the second RF power supply operates in different modes.

Abstract: An apparatus may include a substrate support portion, a plasma generation chamber, electrodes, and a power source. The substrate support portion supports a substrate including an insulating layer and a substrate bulk. The plasma generation chamber may include chamber wall portions, a gas port, and a plasma application aperture and is configured to contain a gas. The plasma application aperture may be covered by a portion of the substrate. Each electrode may protrude into or extend into an interior portion of the plasma generation chamber. The power source may be coupled to a particular electrode, and the power source may be configured to apply a voltage to the particular electrode. Application of the voltage to the particular electrode generates a plasma within the plasma generation chamber, whereby generation of the plasma results in a conductive path through the insulating layer of the substrate between the plasma and the substrate bulk.

Abstract: A device for providing a flow of non-thermal gaseous plasma for treatment of a treatment region comprises a cell for the generation of the non-thermal plasma, the cell having an inlet for gas and an outlet for the non-thermal gaseous plasma. The cell is in heat conducting relationship with a heat sink through a heat pipe, the heat sink and the heat pipe both forming parts of the device. The cell typically has a dielectric member of high thermal conductivity in heat conducting relationship with the heat pipe. The heat sink is typically a capsule containing the gas to be supplied to the inlet of the cell.

Abstract: Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, the methods generally includes generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma. Minimizing the electrical potential difference between the plasma and the electrodes reduces particle generation because the acceleration of the ions in the sheath region of the electrodes is reduced and the collision force of the ions with the protective coating layer on the electrodes is minimized. Therefore, particle generation on the substrate surface is reduced.

Abstract: A device for generating short-wavelength electromagnetic radiation based on a gas discharge plasma calls for suppressing droplet formation of liquid coating material that is applied to disk electrodes rotated at high rotational frequencies and ensuring a uniform layer thickness. The device has two rotating disk electrodes, each having two lateral surfaces and a circumferential surface, provided with a reservoir with liquid coating material and a wiper for removing excess coating material. The wiper, which has a U-shaped form comprising two legs parallel to the lateral surfaces of the disk electrode and a crosspiece transversely over the circumferential surface, is at least axially movably supported and has impingement elements at the legs so that it is automatically axially adjustable by means of the coating material which is transported on the lateral surfaces and pressed into the gap during the rotation of the disk electrode.

Abstract: A plasma processing apparatus includes a high frequency power supply turning a high frequency power ON/OFF and supplying the high frequency power to either one of upper and lower electrodes. A matching circuit and a power transmission line are provided between the high frequency power supply and the either one of the electrodes. A probe detector measures electrical characteristics on the power transmission line and generates measurement signals. A processing unit samples the measurement signals, generates sample values, The processing unit receives a pulse signal corresponding to ON/OFF switching of the high frequency power, generates sample values by sampling the measurement signals at a sampling interval for a period after the lapse of a mask period from an ascending timing thereof until a descending timing thereof, and selects sample values obtained through the last one or more sampling with respect to the descending timing, as detection values.

Abstract: A plasma flood gun for an ion implantation system includes an insulating block portion and first and second conductive block portions disposed on opposite sides of the insulating block portion. Conductive straps can be coupled between the first and second conductive block portions. The conductive block portions and the central body portion include recesses which form a closed loop plasma chamber. A power source is coupled to the conductive block portions for inductively coupling radio frequency electrical power into the closed loop plasma chamber to excite the gaseous substance to generate a plasma. The respective recess in the second conductive block portion includes a pinch region having a cross-sectional dimension that is smaller than a cross-sectional area of portion of the closed loop plasma chamber directly adjacent the pinch region. The pinch region can be positioned immediately adjacent an outlet portion formed in the second conductive block portion.

Abstract: A plasma generator includes a pair of identical spiraled electrical conductors separated by dielectric material. Both spiraled conductors have inductance and capacitance wherein, in the presence of a time-varying electromagnetic field, the spiraled conductors resonate to generate a harmonic electromagnetic field response. The spiraled conductors lie in parallel planes and partially overlap one another in a direction perpendicular to the parallel planes. The geometric centers of the spiraled conductors define endpoints of a line that is non-perpendicular with respect to the parallel planes. A voltage source coupled across the spiraled conductors applies a voltage sufficient to generate a plasma in at least a portion of the dielectric material.

Abstract: When RF power is supplied from an RF generator to a load via a power supply unit, (a) the internal impedance of the RF generator is made lower than the characteristic impedance of the power supply unit, and (b) the load-end voltage is increased by selecting the electrical length LE of the power supply unit, which connects between the RF generator and the load to supply RF power, so that the electrical length LE has a predetermined relation with the fundamental wavelength ? of the RF AC. More specifically, the electrical length LE of the power supply unit is selected in such a way that, when the load end, which is the input end of the load, is in an open state, the electrical length LE is (2n?1)·(?/4)?k·??LE?(2n?1)·(?/4)+k·? (n is an integer, k is {??2·cos?1(1/K)}/(4?)) with respect to the fundamental wavelength ? of the RF AC.

Abstract: An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.

Abstract: Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space a microwave generator configured to generate microwaves for generating plasma of a processing gas introduced into the processing space, a distributor configured to distribute the microwaves to a plurality of waveguides using a variable distribution ratio, an antenna installed in the processing container to seal the processing space and configured to radiate the microwaves distributed to each of the plurality of waveguides by the distributor to the processing space, a monitor unit configured to monitor a power of the microwaves distributed to each of the plurality of waveguides by the distributor, and a distribution ratio control unit configured to correct the distribution ratio used for distribution of the microwaves by the distributor based on a difference between a ratio of the power of the microwaves monitored by the monitor unit and a previously designated distribution ratio.

Abstract: A compact cold plasma device for generating cold plasma having temperatures in the range 65 to 120 degrees Fahrenheit. The compact cold plasma device has a magnet-free configuration and an induction-grid-free configuration. An additional configuration uses an induction grid in place of the input electrode to generate the cold plasma. A high voltage power supply is provided that includes a controllable switch to release energy from a capacitor bank to a dual resonance RF transformer. A controller adjusts the energy input to the capacitor bank, as well as the trigger to the controllable switch.

Abstract: A low-temperature, atmospheric-pressure microplasma generator comprises at least one strip of metal on a dielectric substrate. A first end of the strip is connected to a ground plane and the second end of the strip is adjacent to a grounded electrode, with a gap being defined between the second end of the strip and the grounded electrode. High frequency power is supplied to the strip. The frequency is selected so that the length of the strip is an odd integer multiple of ¼ of the wavelength traveling on the strip. A microplasma forms in the gap between the second end of the strip and the grounded electrode due to electric fields in that region. A microplasma generator array comprises a plurality of strongly-coupled resonant strips in close proximity to one another. At least one of the strips has an input for high-frequency electrical power. The remaining strips resonate due to coupling from the at least one powered strip. The array can provide a continuous line or ring of plasma.

Abstract: Described herein is a method and apparatus for removing metal oxides on a surface of a component via electron attachment. In one embodiment, there is provided a field emission apparatus, wherein the electrons attach to at least a portion of the reducing gas to form a negatively charged atomic ions which removes metal oxides comprising: a cathode comprising an electrically conductive and comprising at least one or more protrusions having a high surface curvature, wherein the cathode is surrounded by a dielectric material which is then surrounded by an electrically conductive anode wherein the cathode and anode are each connected to an electrical voltage source, and the dielectric material between the cathode and anode is polarized to provide an electric field at one or more protrusions and thereby electrons from the cathode.

Abstract: A showerhead assembly includes a front plate having a front surface, a back surface and a plurality of first through holes connecting the front surface and the back surface, a back plate having a front surface, a back surface and a plurality of second through holes connecting the front surface and the back surface, and an adhesive layer joining the back surface of the front plate and the front surface of the back plate. The plurality of first through holes are aligned with the plurality of second through holes, and the front plate and the back plate are formed from dissimilar materials.

Abstract: A plasma process method and apparatus for use with a vacuum instrument having a vacuum chamber evacuated by an oil free high vacuum pump to a base pressure below about 1 Pa. A gas buffer chamber in fluid communication with the plasma chamber, the gas buffer chamber having a volume about 1/500 to 1/2000 of the volume of the vacuum chamber. A valve between the plasma chamber and the gas chamber permits flow between the gas chamber and the plasma chamber, wherein, upon opening the valve, gas is admitted into the plasma chamber and pressure in the plasma chamber rises temporarily to between about 10 and about 200 Pa and plasma ignition can be obtained when the plasma excitation device is energized simultaneously. A flow restriction between the gas source and the gas chamber has a maximum flow rate therethrough of about 25 sccm.

Abstract: A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

Abstract: A system for controlling an impedance of a radio frequency (RF) return path includes a matchbox further including a match circuitry. The system further includes an RF generator coupled to the matchbox to supply an RF supply signal to the matchbox via a first portion of an RF supply path. The RF generator is coupled to the matchbox to receive an RF return signal via a first portion of an RF return path. The system also includes a switch circuit and a plasma reactor coupled to the switch circuit via a second portion of the RF return path. The plasma reactor is coupled to the match circuitry via a second portion of the RF supply path. The system includes a controller coupled to the switch circuit, the controller configured to control the switch circuit based on a tune recipe to change an impedance of the RF return path.

Abstract: A microwave plasma generating device has a plasma chamber. A microwave generating device is provided outside of the plasma chamber, and the microwaves are coupled into the plasma chamber via a microwave in-coupling device. The microwave in-coupling device has an inner conductor which leads into the plasma chamber through a chamber wall of the plasma chamber, an insulating tube which encloses the inner conductor and separates the inner conductor from an interior of the plasma chamber, and an outer conductor which leads into the plasma chamber through the chamber wall and which is coaxial to the inner conductor. The outer conductor has an outer conductor end in the plasma chamber. The inner and outer conductors form a microwave line, an outlet of microwaves out of the microwave line is provided in the plasma chamber to generate microwave plasma in the interior of the plasma chamber.

Abstract: A device for generating a cold, HF-excited plasma under atmospheric pressure conditions can be used advantageously for plasma treatment of materials for cosmetic and medical purposes. The device contains a metal housing functioning as a grounded electrode in the region of the emergent plasma, wherein an HF generator, an HF resonance coil having a closed ferrite core suitable for the high frequency, an insulating body acting as a gas nozzle, and a high-voltage electrode mounted in the insulating body are disposed in such a manner that they are permeated or circulated around by process gas. By integrating the plasma nozzle and required control electronics in a miniaturized handheld device, or by using a short high-voltage cable, the invention allows compliance with the electromagnetic compatibility directives and allows the power loss to be minimized and thus a mobile application to be implemented.

Abstract: The present disclosure provides for a plasma system. The plasma system includes a plasma device, an ionizable media source, and a power source. The plasma device includes an inner electrode and an outer electrode coaxially disposed around the inner electrode. The inner electrode includes a distal portion and an insulative layer that covers at least a portion of the inner electrode. The ionizable media source is coupled to the plasma device and is configured to supply ionizable media thereto. The power source is coupled to the inner and outer electrodes, and is configured to ignite the ionizable media at the plasma device to form a plasma effluent having an electron sheath layer about the exposed distal portion.

Abstract: In an RF power supply for supplying RF power to a plasma load, reflected wave power control is performed in which the reflected wave power of an RF generator is detected and the RF generator is controlled. For a short-time variation in reflected wave power, control is performed based on a peak value variation in the detection value of reflected wave power. For a long-time variation in reflected wave power, control is performed based on a variation in a smoothed value obtained by smoothing detection values of reflected wave power. A reflected wave power control loop system includes a reflected wave power peak value dropping loop system and an arc blocking system that perform control based on a peak variation in reflected wave power and a reflected wave power amount dropping loop system that performs control based on a smoothed power amount of reflected wave power.

Abstract: In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.

Abstract: An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to an array of radial toroidal channels in the ceiling.

Abstract: An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to two arrays of radial toroidal channels in the ceiling, the resonator having two radial zones and the two arrays of toroidal channels lying in respective ones of the radial zones.

Abstract: An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Apparatuss of use of the apparatus in the practice of various processes are also provided by the present invention.

Abstract: A hand-held device and a method for plasma treatment of workpieces. The hand-held device comprises a housing for receiving a plasma source supplied with a gas stream from a gas supply unit. Further, an electrode unit is arranged in the plasma source and connected via an electrical line with a voltage source so that a plasma stream can be produced. The plasma stream can be directed through a nozzle of the housing onto a workpiece. The hand-held device comprises a sensor system for the collection of operating parameters which includes at least one operator sensor device for collecting a position of an operator relative to the plasma source and at least one pressure sensor for the collection of a pressure in the gas supply unit. Means of the hand-held device is communicatively connected with the sensor system for detecting the collected operating parameter via control data lines.

Abstract: To simplify a configuration of a plasma generation device that generates plasma by means of an electromagnetic wave using thermal electrons as a trigger. The plasma generation device 30 includes: a thermal electron emission member 14 that emits thermal electrons when heated; a heating device 13 that heats the thermal electron emission member 14 by means of an electromagnetic wave; and an electric field concentration member 61 that concentrates in the vicinity of the thermal electron emission member 14 an electric field of the electromagnetic wave generated by the heating device 13. The plasma generation device 30, while causing the heating device 13 to heat the thermal electron emission member 14, causes the electric field concentration member 61 to concentrate the electric field of the electromagnetic wave in the vicinity of the thermal electron emission member 14, thereby generating plasma in the vicinity of the thermal electron emission member 14.

Abstract: A plasma processing apparatus includes a processing chamber; a conductive base within the processing chamber; an electrostatic chuck, having an electrode, provided on the base; a high frequency power supply that applies a high frequency power to the base; a first DC power supply that applies a DC voltage to the electrostatic chuck; and a plasma generation unit that generates plasma of a processing gas within the processing chamber. A plasma processing method performed in the plasma processing apparatus includes connecting the first DC power supply to the electrode of the electrostatic chuck; cutting off connection between the first DC power supply and the electrode of the electrostatic chuck; and generating the plasma within the processing chamber by applying the high frequency power to the base in a state that the connection between the first DC power supply and the electrode of the electrostatic chuck is cut off.

Abstract: A method to detect a potential fault in a plasma system is described. The method includes accessing a model of one or more parts of the plasma system. The method further includes receiving data regarding a supply of RF power to a plasma chamber. The RF power is supplied using a configuration that includes one or more states. The method also includes using the data to produce model data at an output of the model. The method includes examining the model data. The examination is of one or more variables that characterize performance of a plasma process of the plasma system. The method includes identifying the fault for the one or more variables. The method further includes determining that the fault has occurred for a pre-determined period of time such that the fault is identified as an event. The method includes classifying the event.

Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.

Abstract: A device is described herein which may comprise a chamber, a fluid line, a pressurized source material in the fluid line, a component restricting flow of the source material into the chamber, a sensor measuring flow of a fluid in the fluid line and providing a signal indicative thereof, and a pressure relief valve responsive to a signal to reduce a leak of source material into the chamber in the event of a failure of the component.

Abstract: The present invention is direct to a nano-probe corona tool and uses thereof. A nano-probe corona tool is disclosed having a tip with a diameter in the nano-scale, typically around 100 nm. The nano-probe corona tool is constructed of electrically conductive material. On the other end of the tool, a pulsed voltage source outputs a pulsed voltage to generated a pulsed electrical potential at the tip. The pulsed electrical potential at the tip causes a plasma discharge corona to occur. Uses of the corona discharge include, but are not limited to, optical emission spectroscopy, in the enhancement of deposition of coatings and nanoscale welding, e.g., nanotube or nanowires to a contact pad and welding two nanowires together, and in nanoscale surgery. For example, a nano-probe comprising CNTs may be inserted into cell membranes. The resulting corona discharge may be used to destroy tumors within the cell.