Abstract: A circuit for generating a reference voltage that varies as a function of temperature, in particular for regulating the voltage at which a battery is charged by an alternator, wherein the circuit comprises: a source of a voltage that is fixed regardless of temperature; two bipolar transistors whose bases are interconnected and whose base-emitter junctions have different temperature behaviors, with constant currents flowing through each of them; a first resistor connected between the emitters of the two transistors, with the voltage across the terminals thereof being representative of the temperature to which the two transistors are exposed; and a second resistor connected between the fixed voltage source and an output for the reference voltage, and through which a current may flow, at least over a predetermined range of temperatures, which current is equal to the additional current induced by an increase in the voltage across the terminals of said first resistor relative to a voltage which corresponds to a cr

Abstract: A reference circuit for supplying current to high speed logic elements in an integrated circuit supplies less current when circuit temperature decreases while a supply voltage remains constant. The reference circuit supplies less current when the supply voltage increases while circuit temperature remains constant. A resistance with a temperature coefficient, in some embodiments a negative temperature coefficient, is used to decrease current flow in a first leg of an output mirror when temperature decreases. A feedback circuit is used to decrease current flow in the first leg of the output current mirror when the feedback circuit senses an increase in supply voltage by sensing a voltage change on a common control node of the output current mirror. The reference circuit sees many applications including supplying current to logic gates, input/output buffers, and sense amplifiers.

Abstract: A bridge-configured precision voltage reference circuit includes a first voltage supply terminal, a second voltage supply terminal, first and second bridge nodes, and a bridge resistor connected between the first and second bridge nodes. A Zener diode is coupled between the first bridge node and the first voltage supply terminal, and a voltage divider circuit is coupled between the first voltage supply terminal and the second bridge node. An output voltage terminal is coupled to the voltage divider circuit, so that a precision output voltage is derived as a fraction of the voltage differential between the second bridge node and the potential of the first voltage supply terminal. A fixed magnitude current source is coupled between the first bridge node and the second voltage supply terminal, and an adjustable current source is coupled between the second voltage supply terminal and the second bridge node.

Abstract: A constant-current source including a constant-current output circuit for supplying a constant current provided with one or more transistors with the bases biased with the same base potential, a first circuit which provides a first current signal for setting the strength of the constant current to be delivered from the constant-current output circuit, a second circuit which generates a second current signal and provides the same base potential in response to the second current signal, a third circuit which controls the second current signal to minimize any deviation of the second current signal from the first current signal, and a DC power supply for energizing at least the first, second and third circuits.

Abstract: A switching-type voltage regulator of this invention comprises a voltage control section for generating a stabilized voltage by controlling a voltage supply period from input side to output side, and a protective device. The protective device monitors the temperature of a certain component part or parts of the voltage control section and convert the temperature into a voltage to compare with the reference voltage generated by a reference voltage source, and brings the output of the voltage control section to a halt in accordance with the result of comparison. The output of the voltage control section is brought to a halt regardless of the presence of output abnormalcy when the temperature of the component part or parts monitored exceeds a certain level. As the monitoring means, it is preferable to utilize the electrical characteristic of semiconductor p-n junction changing with temperature, and a semiconductor diode is more preferable.

Abstract: A method and apparatus for a circuit physically realizing a virtual ground function producing a virtual ground voltage halfway between the supply and common voltages and having improved accuracy and stability is described. A stable bias current source is coupled to a precision resistor voltage divider network, which is used as a voltage reference generator to produce a virtual ground voltage of a precise value. This reference voltage is coupled to an operational amplifier configured in a unity gain configuration. The circuit thus created offers numerous advantages over the virtual ground circuits in use in the prior art. An integrated circuit implementing this circuit is described, and alternative packaging embodiments are disclosed. Other embodiments are also disclosed.

Abstract: A bandgap voltage reference circuit includes a low temperature coefficient of resistance (TCR) tail resistor connected in series with a high TCR tail resistor, and a low TCR correction resistor connected in parallel with the high TCR resistor. The ratio of resistance values for the parallel resistors is selected to produce a correction voltage that essentially cancels a Tln(T) output deviation from temperature linearity, where T is absolute temperature. Matching voltage-temperature characteristics are obtained by selecting a resistor ratio at which the rate of change in the circuit's output voltage, both with and without the parallel resistors, is substantially zero at approximately the same temperature. While the shape of the compensation voltage-temperature curve is determined by the resistor ratio, it is scaled to the magnitude of the Tln(T) deviation by an appropriate selection of absolute resistor values. The correction resistor is preferably a trimmable thin film element.

Abstract: A constant voltage circuit is to stabilize a constant voltage output with respect to a source voltage and produce the constant voltage output at a lower level of the source voltage. The constant voltage circuit is arranged to generate an output of constant voltage (constant voltage Vreg) by using a band-gap circuit (2), and comprises an error detecting circuit (4) for detecting an error voltage between the constant voltage generated by the band-gap circuit and a setting value, an output circuit (6) for receiving a current indicative of the error voltage from the error detecting circuit, generating a current depending on the received current, and feeding the generated current back to the band-gap circuit, and an initiating circuit (8) for supplying an initiation current to the band-gap circuit at the time of raising a source voltage.

Abstract: A voltage reference circuit for providing a predetermined reference voltage at an output terminal which is independent of variation in supply voltage. The voltage reference circuit includes first and second semiconductor elements coupled between supply voltage terminals of a power supply, with the first and second semiconductor elements being connected in series with first and second impedances. The reference voltage is provided at the common terminal of the first and second impedances. The temperature coefficient of voltages produced by the first and second semiconductor elements in combination with the first and second impedances provide a reference voltage with a predetermined temperature coefficient. A tuning circuit is also included to permit fine adjustment of voltage level changes due to process variations.

Abstract: A method and apparatus for a circuit physically realizing a virtual ground function and having improved accuracy and stability is described. A stable bias current source is coupled to a bandgap reference generator and resistances to produce a virtual ground voltage of a precise value, this voltage is then coupled to an operational amplifier configured in a unity gain configuration. The circuit thus created offers numerous advantages over the virtual ground circuits in use in the prior art. An integrated circuit implementing this circuit is described, and alternative packaging embodiments are disclosed. Other embodiments are also disclosed.

Abstract: The generator of reference voltage comprises a first current generator suitable for generating a current that varies linearly with the supply voltage, a first voltage generator suitable for generating a constant voltage with zero thermal drift, a second current generator suitable for generating a current dependent on the voltage with zero thermal drift, a second voltage generator suitable for generating a voltage with given thermal drift, a third current generator suitable for generating a current dependent on the voltage with given thermal drift and means for combining the three currents together so as to produce across an output resistance an output voltage having a value equal to the product of the output resistance by the first and third current, divided by the second current.

Abstract: A temperature compensated voltage regulator circuit having a first resistor (R.sub.X) disposed in the base circuit between two cascaded transistors and a second resistor (R.sub.F) coupled between the collector and base of the first of the two transistors to provide compensation for beta variations in the transistors resulting from process variables during the manufacture of the circuit.

Abstract: An auto-TC voltage reference wherein an operational amplifier receives at one input the voltage of a Zener diode and at its other input receives a compensation signal from a feedback circuit comprising a transistor and resistor network. When one of the resistors of the network is trimmed to give a nominal output voltage for the reference, the TC of the reference voltage will have been reduced to zero, or nearly so. The circuitry is capable of compensating Zener diodes of either positive or negative TC.

Abstract: A thermally dependent self-modifying voltage source (115) is constructed with a first reference circuit (301) having a control input (311), a primary output (117) dependent on the control input, and a thermally dependent secondary output (303). The thermally dependent self-modifying voltage source also includes a thermally dependent reference (309) with an output (307). The thermally dependent secondary output (303) of the first reference circuit (301) and output (307) of the thermally dependent reference (309) are coupled to inputs of an amplifier (305). The amplifier (305) has an output (313) coupled to the control input (311) of the first reference circuit (301), wherein the primary output (117) of the first reference circuit is dependent on the amplified difference between the thermally dependent secondary output (303) of the first reference circuit and the output (307) of the thermally dependent reference (309).

Abstract: A temperature compensated control circuit includes a load transistor which passes the load current and has an on-resistance which varies with temperature. To provide temperature compensation, first and second pilot transistors are integrated with the load transistor such that as the load transistor heats-up due to the load current passing through the on-resistance of the load transistor, the first and second pilot transistors heat-up due to heat conduction from the load transistor. Each of the pilot transistors has an on-resistance which varies proportionally or similarly to the on-resistance of the load transistor. A first current source supplies a first level of current to the on-resistance of the first pilot transistor to develop a first reference voltage, and a second current source supplies a second level of current to the on-resistance of the second pilot transistor to develop a second reference voltage.

Abstract: A semiconductor diode array monolithically integrated onto a power MOS transistor or power IGBT for temperature sensing. With the application of a positive bias and a constant current, the diode array provides a voltage that varies linearly as a function of temperature for the power transistor. The diode array is constructed in such a manner so as to prevent latch-up (i.e. where a parasitic silicon controlled rectifier is turned on, locking the power transistor in an on condition) and voltage breakdown (i.e. where the diode malfunctions from excessive voltage). The diode array includes at least three diodes that are either in parallel or are in series. The two types of diode array can be used in either a high-side driver circuit or a low-side driver circuit.

Abstract: An IC built-in connector for power source stabilization including a connector body having a plurality of contacts to be brought into contact with a cable terminal connector, and a wiring board built in the connector body and adapted to have thereon a variable direct voltage converter acting as a power source stabilizing IC. The wiring board has a plurality of output voltage control resistors for the power source stabilizing IC having coefficients of temperature which are generally equal, and the resistors are arranged right under or proximate to a surface of the wiring board where the power source stabilizing IC is mounted, so as to be heated equally thereby, so that a resistance ratio of each IC output voltage control resistor is equally compensated with respect to the temperature of the power source stabilizing IC.

Abstract: An integrated circuit has an internal supply voltage with a positive temperature coefficient, as a result of which the switching rate and the degree of "hot carrier stress" are less sensitive to temperature. By using a reference voltage source having positive temperature coefficient, the normal effects of increasing temperature on switching rate and "hot carrier stress" are compensated for, thus stabilizing circuit operation as a function of temperature. The reference voltage source is incorporated within a voltage converter which is already present in the circuit, to achieve a compact and efficient configuration.

Abstract: A temperature responsive circuit (100) has a temperature sensitive device (1), a first current source (2) connected in series with the temperature sensitive device for generating a given current (I.sub.1) and a detector (3) having an output (4) for providing a voltage signal (V.sub.4) which varies with the temperature sensed by the temperature sensitive device (1). A current-limiting arrangement (6) is connected to the output (4) and includes a current mirror having first and second similar transistors (Q11 and Q7) with the main current path between first and second electrodes (S.sub.7 and d.sub.7) of the second transistor (Q7) providing an output current I.sub.out of the circuit. A second current source (Q10 and Q12) provides a current for the current mirror which is related to the given current (I.sub.1) when the voltage at the output of the detector (3) represents a temperature below a critical temperature (T.sub.

Abstract: A circuit for producing a reference voltage, particularly for a voltage regulator, has a current source that produces the desired reference voltage across a string of components. The current source is controlled by a differential amplifier that receives inputs that vary with chip temperature. The differential amplifier increases the reference voltage when the chip temperature increases. When the voltage regulator is used with an FET memory, the increase in the regulator voltage with temperature helps to compensate for an increase in the rate that FET storage cells lose the charge that represents data.

Abstract: The generator comprises a first generator of voltage with thermal drift of zero, a second generator of voltage with given thermal drift, first means for applying a given load to the voltage generated by the first generator, second means for applying a given load to the voltage generated by the second generator, subtracting means for subtracting one from the other the loaded voltages generated by said first and second generator of voltage.

Abstract: An improved voltage reference circuit is shown for use in analog integrated circuits including A/D and D/A converters. The voltage reference circuit comprises an operational amplifier having an non-inverting terminal connected to a capacitor. The inverting terminal of the op amp is connected to the op amp output terminal. The output terminal provides a constant reference voltage which is a function of the voltage charged in the capacitor. The capacitor includes a floating gate, an isolating layer, and a controlling gate which is used to charge (program) the capacitor to a fixed voltage. The capacitor structure is such that its charge is maintained constant over time independent of any temperature change. As a result, the voltage reference circuit prevents fluctuations in the output reference voltage throughout its operating period.

Abstract: A master bias voltage regulator circuit (5) has an output node for supplying a temperature compensated reference voltage (VREF1) to an input node of at least one slave ECL bias regulator circuit (4). The temperature compensated reference voltage is also compensated for a temperature-related characteristic of at least one ECL load, such as an ECL gate (2), and is also compensated for a temperature-related characteristic of the at least one slave ECL bias regulator circuit. VREF1 is sourced from an emitter of an output transistor (5Q7) and the collector of the output transistor is coupled to the emitter of a matching transistor. This technique is shown to provide improvements, relative to the prior art, in output reference voltage stability over variations in power supply voltage, temperature and process variations, while also reducing power consumption.

Abstract: A reference generator includes a first, a second and an additional third current mirror for generating both a reference output current and a reference output voltage. As the reference output voltage only depends on the gate-source voltages of transistors which are fed with a constant current, the reference output voltage has a constant value and is substantially independent of the ambient temperature.

Abstract: AC stabilization and temperature compensation improves phase margin and permits high temperature (significantly above 125.degree. C.) operation for an exemplary low drop-out voltage regulator with a PNP output transistor. The low drop-out voltage regulator (FIG. 1) includes a PNP output transistor (Q.sub.OUT) together with a voltage reference circuit (12), a gain circuit (14), and a current limit circuit (16). To provide AC stabilization, a small internal capacitor (C.sub.INT) of about 10 pF is coupled between the input of the gain circuit and the base of the output PNP, using Miller multiplication to substantially increase the effective capacitance of the stabilization capacitor, and introducing a zero into the gain-phase plot for the voltage regulator, substantially cancelling the pole, with a concomitant increase in phase margin. To provide temperature compensation, a dual-collector temperature compensation PNP (Q.sub.

Abstract: There is disclosed a circuit and method for providing bias voltage levels which are precisely controlled as a function of temperature. The circuit is arranged to mix a precise bandgap regulated voltage with a temperature compensated circuit to provide the required output. The temperature compensated circuit is in turn arranged to mimic the temperatue sensitive components in the output circuit.

Abstract: A method and device for the generation of a bandgap reference voltage, compensating for temperature and input voltage fluctuations, in a device hardened against radiation. To generate a stable reference voltage output, the device provides a positive temperature coefficient voltage and a negative temperature coefficient voltage, compensating the positive temperature coefficient voltage with the negative temperature coefficient voltage to maintain the stable bandgap reference voltage output under temperature changes. In addition, input voltage fluctuations are tracked, and excess current is shunted to maintain the stable bandgap reference voltage output under voltage changes. An epi ring insulates the bandgap reference voltage generator sensitive nodes from excess leakage currents caused by radiation.

Abstract: An internal supply voltage generator receiving an external supply voltage, generates a stable, constant internal supply voltage to be applied to a semiconductor memory device regardless of the variation of the temperature. For this end, the generator includes a voltage sharing circuit (80) which has a first variable resistor (R.sub.1 ') with higher resistance as a load element and a second variable resistor (R.sub.2 ') with lower resistance as a driving element. As the temperature increases, the resistance of the first variable resistor (R.sub.1 ') increases, thereby decreasing the current flow formed therethrough. Then, the comparator (60) connected to the output of the voltage sharing circuit (80) allows the output circuit (70) to increase the internal supply voltage, in response to increase of the temperature.

Abstract: A bandgap voltage generator useful in CMOS integrated circuits using intrinsic bipolar transistors. The generator is comprised of a pair of bipolar voltage generator which utilizes bipolar devices in a common collector configuration. Therefore for the first time a bandgap voltage reference using the intrinsic vertical bipolar transistor can be implemented in a CMOS chip without the need for an operational amplifier.

Abstract: An electric power supply system with at least two mains (10, 12, 14) is indicated, whose outputs (16, 18, 20) are switched in parallel and who together supply a load (22). The output power of the respective mains (10, 12, 14) is governed by its temperature. In a special execution the output power of the respective mains (10, 12, 14, is regulated by the difference of its temperature and the mean temperature of all mains. This results in the fact that the mean time between two failures of the electric power supply system is increased by simple means.

Abstract: There is disclosed a temperature compensated reference voltage generation circuit and method adapted to maintain a specific temperature/voltage relationship. The circuit is designed such that it can easily be adapted to switch between different voltage temperature requirements simply by adjusting the parameters of a few circuit elements. The circuit relies upon three different current generators, each performing a different function.

Abstract: FET protection circuit (10; 100) senses the temperature of a FET (11) and, via a control circuit (24), increases FET conduction in response to sensed FET temperature exceeding a high temperature threshold (160.degree. C.) close to the maximum rated junction temperature (175.degree. C.) of the FET. This allows the FET to survive excessive drain-to-source voltages which occur during load dump conditions even when load dump is sensed by a zener diode (26) which initially turns on the FET. During load dump after a zener diode (26) turns on the FET, in response to sensing excessive FET temperature the FET is turned in harder so as to reduce the drain-to-source voltage (V.sub.DS) and minimize power dissipation during load dump thereby protecting the FET. Normal overcurrent and maximum temperture turn off circuitry (44, 33, 60-63) is effectively overridden by high temperature threshold turn-on circuitry (50).

Abstract: The present invention is directed to circuitry which uses a reference voltage and a reference current to produce a resistance which stays essentially constant even when the temperature of the device varies. The circuitry of a preferred embodiment consists of a resistor and a n-channel FET. The source of the FET is connected to ground, and the drain is connected to one terminal of the resistor. The other terminal of the resistor is connected to a reference current source and to the noninverting terminal of an operation amplifier. The inverting terminal of the operational amplifier is connected to a reference voltage. The output of the operational amplifier is connected to the gate of the FET. The value of the resistor is chosen such that the voltage drop across the FET (I.e., V.sub.ds) is small so that the FET operates in the linear region. A resistive element is composed of the resistor and the on-resistance of the FET.

Abstract: A circuit arrangement for driving at least one electromagnetic relay provides that all of the excitation circuits can be connected to a constant voltage source in parallel relative to each other and jointly in series with the switching path of an electronic switch (FET). The electronic switch (FET) is switched through and blocked in impulsive manner whereby the pulse-duty factor is adjusted in a control unit depending on the operating voltage (U.sub.B) and the ambient temperature of the relay so that it does not fall below the minimum holding current required for the connected relays.

Abstract: The disclosure concerns integrated circuits. More particularly, a method is disclosed for making a constant current source, in these circuits, that is stable as a function of the temperature and the supply voltage of the integrated circuit. It is proposed to make a stable current source in using two parallel-mounted transistors, one of which is controlled by a bandgap type of reference voltage while the other is controlled by a Wilson mirror. The addition of the currents of the two transistors gives a current that is far more stable as a function of temperature than the individual currents in each of the transistors.

Abstract: An enable circuit that integrates thermal shutdown capability. The enable circuit utilizes a temperature insensitive threshold detector network that provides a desired biasing current when the ON/OFF signal applied at its input exceeds a preselected voltage. Thermally sensitive circuitry connected between the input of the threshold detector network and ground remains off when the ON/OFF signal is equal to the preselected voltage and the temperature of the enable circuit is below a preselected maximum temperature. However, when the temperature of the enable circuit reaches the preselected maximum temperature, the thermally sensitive circuitry turns on, clamping the input signal to the threshold detector network below the preselected voltage.

Abstract: A power supply having an amplifier connected to first and second feedback circuits is provided in which the nominal output of the power supply is a function of the first and second feedback circuits and the temperature coefficient of the power supply is also a function of the first and second feedback circuits. The first feedback circuit includes a voltage divider and a first voltage source and the second feedback circuit includes a second voltage source. The nominal output of the power supply and the temperature coefficient of the power supply are functions of the first and second voltage sources and the voltage divider.

Abstract: A semiconductor integrated circuit includes a semiconductor chip, a power supply terminal provided on the semiconductor chip for receiving a voltage from an external power supply source, an internal circuit provided on the semiconductor chip, a power supply circuit provided on the senmiconductor chip for transforming an external power supply voltage received from the power supply terminal for supplying a source voltage resulting from the voltage transformation to the internal circuit. A control circuit provided on the semiconductor chip controls the power supply circuit, wherein the control circuit includes external power supply voltage detector and/or temperature detector and responds to the signal from the external power supply voltage detector by changing the power supply voltage to the internal circuit. Thus, the operating speed of the internal circuit is kept substantially constant.

Abstract: A BiMOS voltage reference circuit which includes a bandgap circuit for providing a predetermined voltage at an output of the circuit that is independent of temperature. A start-up and bias circuit coupled to the bandgap circuit for providing a start-up current to the bandgap circuit during power-up and for providing a bias current to the bandgap circuit after power-up. A feedback circuit coupled to the bandgap circuit for maintaining the bias current to the bandgap circuit independent of power supply variations wherein the predetermined voltage at the output of the circuit is also independent of power supply variations as well as temperature.

Abstract: A DC to DC converter employs a push-pull oscillator which employs a transformer having a primary winding and a plurality of secondary windings. The transformer has a core which is of a square loop hysteresis type. The push-pull oscillator is supplied operating voltage by means of a voltage regulator circuit which operates to regulate the voltage applied to the push-pull oscillator according to both input voltage variations and output load variations. An output secondary winding of the transformer is coupled to a full wave rectifier. The full wave rectifier output is fed back to the regulator to control the voltage applied to the push-pull oscillator via the regulator. Due to circuit operation, the output voltage is extremely well regulated while having low ripple.

Abstract: An adjustable temperature dependent current generator includes a transconductance current multiplier, a current mirror, two temperature dependent current generating circuits and a current source to generate currents capable of having an adjustable linear relation to temperature.

Abstract: An integrated temperature threshold sensing circuit comprises first and second bipolar transistors (Q1, Q2) biased so that the current density in the first transistor is larger than that in the second transistor by a first known factor. The first and second transistors have their collectors and bases connected to a first bias voltage source and to a second bias voltage source, respectively, and their emitters connected respectively to first and second current sources (12,14) for passing first and second bias currents (I.sub.1, I.sub.2) of known relative proportions (K:1) through the respective first and second transistors.

Abstract: A resistor formed in the same epitaxial layer of semiconductor material in which a Hall element is formed is used to provide a temperature dependent voltage source which is inversely proportional to the resistance of a temperature sensitive load resistor on the Hall element output. A current mirror circuit is used to apply a current proportional to the current through the epitaxial layer resistor to the load resistor so that the voltage across through the load resistor varies in a direct relationship with the sensitivity of the Hall element.

Abstract: In order to compensate for the effects of temperature variations on a transducer such as a piezo-resistive bridge, the bridge is fed from a temperature dependent power supply circuit. The power supply circuit comprises a temperature sensitive element with first and second adjustment means for adjusting the slope of supply voltage for the transducer against temperature on first and second sides, respectively, of a predetermined temperature. The second adjustment means provides an adjustment which is independent of the first adjustment means so that repeated temperature cycling during calibration is unnecessary.

Abstract: A voltage generating circuit includes a first current source which generates a first current and a first voltage generating circuit which generates a first voltage having a first temperature dependency. A second voltage generating circuit generates a second voltage having a second temperature dependency different than the first temperature dependency. A voltage adder circuit coupled to the first and second voltage generating circuits adds the first and second voltages to generate a third voltage having no temperature dependency. A voltage replicating circuit coupled to the voltage adder circuit coupled to the voltage adder circuit replicates the third voltage as a fourth voltage having a level corresponding to the third voltage. A second current source generates a constant second current through a resistive element biased by the fourth voltage and a current replicating circuit coupled to the first and second current sources replicates the second current as the first current.

Abstract: In a constant current-constant voltage circuit disclosed herein, gates of MOSFETs Q.sub.1 and Q.sub.2 are connected together, and the gate of the MOSFET Q.sub.1 is connected to the drain thereof. Further, the source of the MOSFET Q.sub.1 is connected to ground potential GND whereas the source of the MOSFET Q.sub.2 is connected to the drain of a MOSFET Q.sub.3 having a gate connected to power supply voltage V.sub.DD and a source connected to the ground voltage GND. A current mirror circuit including Q.sub.4 and Q.sub.5 has an input and an output respectively connected to the drain of the second MOSFET Q.sub.2 and the drain of the first MOSFET Q.sub.1. A first coefficient (W.sub.3 L.sub.2 /L.sub.3 W.sub.2) depending upon channel lengths (L.sub.2, L.sub.3) and channel widths (W.sub.2, W.sub.3) of the MOSFETs Q.sub.2 and Q.sub.3 is set at a value not larger than a predetermined value. Therefore, the MOSFET Q.sub.3 operates in a linear region as high resistance, and the MOSFETs Q.sub.1 and Q.sub.

Abstract: In order to sense the temperature of an integrated circuit chip, a semiconductor junction device (D1) integrated on the chip is used to generate a first signal (V.sub.1) having a known variation with temperature. A second signal (V.sub.2) is generated by passing a PTAT current (I.sub.2) through a resistor (R1) so that the second signal (V.sub.2) has a known variation with temperature which is opposite in sign to that of the first signal (V.sub.1). The two signals are compared (42) to generate an output signal (OT) which is dependent on whether the temperature of the chip is below or above a predetermined threshold temperature. The current (I.sub.1) through the junction device (D1) is also PTAT, which provides a more accurate definition of the threshold temperature in terms of integrated circuit parameters.

Abstract: A current bias generator (10) with a low temperature coefficient sums the currents (13 and 16) from a bipolar current generator (12) and a MOS current generator (14) having opposite temperature coefficients to provide a low temperature coefficient bias current.

Abstract: A stable reference voltage generator using a current mirror circuit comprising a primary branch and a secondary branch, is shown and described. A first bipolar transistor (Q1) has its collector connected in series with the primary branch of the current mirror, and a voltage divider bridge comprising at least two series-connected resistors (R1, R2), is connected in series between the secondary branch of the current mirror and the collector of a second bipolar transistor (Q2). The base of the second transistor (Q2) is connected to the common point of the series resistors, the base of the first transistor (Q1) is connected to the collector of the second transistor (Q2), and the output of the generator (V.sub.REF) is connected to the terminal of the bridge opposite that connected to the collector of the second transistor (Q2). The geometry of said transistors being such that the first transistor (Q1) is equivalent to "N" transistors identical to the second transistor (Q2) connected in parallel.

Abstract: The temperature compensated reference circuit has a first common emitter BJT whose base is connected to a first JFET current source and through a JFET resistor to a voltage output. The JFET resistor is biased in the linear region and the JFET current source is biased in the saturation region in an operating condition. The voltage across the JFET resistor is selected to be approximately equal to the pinch-off voltage of the JFET current source. The temperature co-efficient of the first BJT and JFET resistor will cancel one another to produce a generally temperature invariant voltage at the output. The voltage regulator incorporates the reference circuit and has a second BJT current source driving the reference circuit. A feedback system includes a second JFET current source between the collector of the first BJT and the connection between the voltage output and the collector of the second BJT. The second JFET current source drives the base of a common emitter third BJT.