Abstract: A Hall sensor apparatus has a Hall effect field with at least five contacts which are wired to at least five connections, wherein none of the at least five contacts is wired to more than one of the at least five connections, a supply circuit and a measurement circuit. In a first operational phase, a supply current enters the Hall effect field or leaves the Hall effect field through one single connection of the at least five connections, and two differential signals are measured at different common-mode potentials in each case between two of the at least five connections. The measurement circuit is designed to combine the measured differential signals into a total signal.

Abstract: Determining a distribution of carrier mobilities in a material of an electronic device includes acquiring a magnetic field-dependent Hall measurement of the material exposed to a finite number of magnetic fields, wherein the magnetic field-dependent Hall measurement includes an electrical signal generated in response to the finite number of magnetic fields being applied perpendicular to a current through the material; and processing the magnetic field-dependent Hall measurement, using a computer, to determine a continuous, least-biased distribution of carrier mobilities that match the magnetic field-dependent Hall measurement by determining, using the magnetic field-dependent Hall measurement, a probability density function of a conductance of the material; approximating the mobility spectrum to a maximum-entropy spectrum of the material; and determining an energy dependence of carrier scattering in the material based on the maximum-entropy spectrum.

Abstract: Magnetic field sensors and associated techniques use a Hall effect element in a current spinning arrangement in combination with a rippled reduction feedback network configured to reduce undesirable spectral components generated by the current spinning and other circuit elements.

Abstract: A sensor system that simultaneously detects the positions of multiple movable carriages along a motion path. The sensor system includes a plurality of sensors arranged at least along a subsection of the motion path, wherein each sensor is designed for a contactless detection of a measuring element provided on each movable carriage. The sensor system also includes a processing device, which is connected electrically with the sensors and which is designed for a synchronous detection of sensor signals of the sensors.

Abstract: The semiconductor device includes a first vertical Hall element provided in a first region of a semiconductor substrate, and including a first plurality of electrodes arranged at predetermined intervals on a first straight line, a second vertical Hall element provided in a second region of the semiconductor substrate different from the first region, and including a second plurality of electrodes of the same number as that of the first plurality of electrodes, the second plurality of electrodes being arranged at the predetermined intervals on a second straight line parallel to the first straight line, a first drive power source configured to drive the first vertical Hall element, and a second drive power source configured to drive the second vertical Hall element and provided separately from the first drive power source.

Abstract: A method for operating a Hall sensor device that includes a Hall effect region and a plurality of electrical contact regions configured to provide electrical signals to and from the Hall effect region using a plurality of control terminals is provided. Each electrical contact region is formed in a respective well that adjoins the Hall effect region, and each control terminal is configured to control a conductance in an associated well. The method includes selectively applying control signals to a first subset of the plurality of control terminals to form channels conducting majority carriers of a first conductivity type in the associated wells during a first operating phase; and selectively applying control signals to a different second subset of the plurality of control terminals to form channels conducting majority carriers of the first conductivity type in the associated wells during a second operating phase.

Abstract: A current detection method for a current detection device including magnetism detection elements that detect magnetic flux density and output a voltage signal corresponding to the magnetic flux density is provided. The method includes acquiring measured value data that is obtained as a result of providing magnetic flux density in a detectable range of the magnetism detection elements that indicates the relationship between the magnetic flux density and an output voltage signal from the current detection device. Next, computational processing is performed so as to fit the acquired measured value data to a formula that includes plural factors and indicates the output voltage of the magnetism detection elements, thereby calculating the plural factors, and correcting the output voltage signal from the magnetism detection elements in accordance with the calculated factors so as to be approximately linear with respect to the magnetic flux density.

Abstract: The present disclosure describes a semiconductor circuit arrangement comprising a Hall sensor circuit integrated into a semiconductor substrate and configured to conduct a Hall supply current between a first terminal and a second terminal of a Hall effect region at an angle of 45° with respect to a normal to a primary flat plane of the semiconductor substrate laterally through the Hall effect region, wherein the Hall supply current has a first dependence on a mechanical stress of the semiconductor substrate. A resistance arrangement integrated into the semiconductor substrate, the resistance arrangement being different than the Hall effect region, is configured to conduct a current between a first terminal and a second terminal of the resistance arrangement, wherein the current through the resistance arrangement has a second dependence on the mechanical stress of the semiconductor substrate.

Abstract: Systems and methods described herein provide a current sensor based on magnetic field detection having multiple sensor arrangements with multiple, different sensitivity ranges. The outputs of the multiple sensor arrangements can be combined to generate a single output signal. The current sensor can include two or more sensor arrangements, each having one or more magnetic field sensing elements, and configured to sense a magnetic field in different first measurement ranges corresponding to different ranges of currents through the conductor and further configured to generate different magnetic field signals indicative of the sensed magnetic field in the respective measurement range. The current sensor can include a circuit configured to generate an output signal indicative of a combination of the different magnetic field signals that corresponds to the current through the conductor.

Abstract: A RF field sensor in which a magnetostrictive film is deposited on one or more electrodes of one or more quartz resonator(s) in which an electric field of the RF field is detected along one axis of the RF field sensor and a magnetic field of the RF field is detected along an orthogonal axis of the RF field sensor simultaneously.

Abstract: Methods and apparatus for controlling a three-phase motor and providing sinusoidal phase currents during startup. In embodiments, differential outputs from a magnetic field sensing element are used to generate a polarity signal used to provide a motor direction drive signal. An amplitude signal derived from the magnetic field sensing element and a measured motor current are used to generate a current amplitude signal. A PWM module generates signals for driving the motor with sinusoidal phase currents from the current amplitude signal and the motor direction drive signal.

Abstract: A magnetic field sensor includes a first magnetic field sensing element configured to generate a first magnetic field signal indicative of a magnetic field associated with a target, a second magnetic field sensing element spaced from the first magnetic field sensing element and configured to generate a second magnetic field signal indicative of the magnetic field associated with the target. A switching module coupled to receive the first and second magnetic field signals is configured to generate a combined signal having alternating portions associated with the first and second magnetic field signals.

Abstract: The semiconductor device includes a vertical Hall element that is provided in a first region of a semiconductor substrate and has a plurality of first electrodes, and a resistive element that is provided in a second region different from the first region in the semiconductor substrate and has a plurality of second electrodes. The plurality of first electrodes and the plurality of second electrodes are connected so that resistances of current paths are substantially the same in any phase in which the vertical Hall element is driven using a spinning current method.

Abstract: A Hall sensor has a Hall sensor element, having multiple connection locations and a current supply source or voltage supply source, which has a first and a second supply connector for output of a supply current or a supply voltage. The first supply connector is connected or can be connected with a first connection location to feed a current into the Hall sensor element, and the second supply connector is connected or can be connected with a second connection location of the Hall sensor element. The Hall sensor has a NAND gate, which is connected with the first connection location of the Hall sensor element using a first input, and with the second connection location of the Hall sensor element using a second input, and has an output for output of a first error signal.

Abstract: The present invention relates to a sensor device comprising four or more sensor elements. A controller comprising a control circuit controls the sensor elements to measure an environment attribute, produces more than two values corresponding to the measurement and compares the values to determine a fault. The more than two values are obtained by different combinations of sensor elements that have at least one sensor element in common and one sensor element that is not in common. The values can be measured in different coordinate systems and the control circuit can convert the field vectors into a common coordinate system.

Abstract: A magnetic sensor circuit includes a first type electromagnetic conversion element which supplies antiphase signals corresponding to the intensity of a magnetic field in a first direction, a second type electromagnetic conversion element which supplies antiphase signals corresponding to the intensity of a magnetic field in a second direction, a switch circuit which controls a current supplied from a current source to the first and the second type electromagnetic conversion elements, and a common mode feedback circuit which determines a midpoint voltage between the first and the second type electromagnetic conversion elements. The common mode feedback circuit performs a feedback operation to thereby set an output common voltage of the first type electromagnetic conversion element higher than the preset reference voltage and set an output common voltage of the second type electromagnetic conversion element lower than the preset reference voltage.

Abstract: A device includes a memory that stores a measurement-result of a first magnetization of a permanent-magnet corresponding to an external-magnetic field in an open-magnetic circuit; and a processor to divide the permanent-magnet into meshes, generate a function based on the measurement-result, the function indicating a second magnetization corresponding to the external-magnetic field in a closed-magnetic circuit, the function including a parameter having a value, calculate a diamagnetic-field corresponding to the external-magnetic field based on the second magnetization for each of the meshes, calculate a third magnetization of the permanent-magnet, calculate an average of the third magnetizations, calculate an error between the first magnetization and the calculated average, correct the value of the parameter, and repeat the calculation of the second magnetization, the diamagnetic-field, the third magnetizations, the average, and the error, and the correction of the value of the parameter until the error falls

Abstract: A vertical Hall sensor circuit comprises an arrangement comprising a vertical Hall effect region of a first doping type, formed within a semiconductor substrate and having a stress dependency with respect to a Hall effect-related electrical characteristic. The vertical Hall sensor circuit further comprises a stress compensation circuit which comprises at least one of a lateral resistor arrangement and a vertical resistor arrangement. The lateral resistor arrangement has a first resistive element and a second resistive element, which are parallel to a surface of the semiconductor substrate and orthogonal to each other, for generating a stress-dependent lateral resistor arrangement signal on the basis of a reference signal inputted to the stress compensation circuit.

Abstract: A current sensor may comprise a first Hall cell, a second Hall cell, a third Hall cell, a fourth Hall cell, and a fifth Hall cell to a set of magnetic field values associated with a magnetic field generated by a current passing through a current rail. The second Hall cell may be positioned at a first distance from the first Hall cell, and the third Hall cell may be positioned at a second distance from the first Hall cell such that the third Hall cell is positioned between the first Hall cell and the second Hall cell. The fourth Hall cell may be positioned adjacent to the first Hall cell, and the fifth Hall cell may be positioned at a third distance from the fourth Hall cell. The magnetic field values may be used to determine an amount of current associated with the current passing through the current rail.

Abstract: A sensor calibration device for calibrating a sensor device, includes a sensor reader configured to read, from a reference sensor, a physical quantity which is a reference of a calibration and detected by the reference sensor, and a sensor manager configured to convert the physical quantity read by the sensor reader into a reference measurement value, the sensor manager being configured to obtain a calibration target measurement value obtained by the sensor device measuring the physical quantity, and the sensor manager being configured to output, to the sensor device, a calibration instruction based on the reference measurement value and the calibration target measurement value.

Abstract: Provided is a current detection device capable of reducing manufacturing cost. A current detection device 1 includes a plate-like bus bar, a printed circuit board on which a magnetic field detecting element is mounted, a magnetic member, and a housing holding these components. The bus bar can be assembled into the housing by sliding in its longitudinal direction. The housing includes a first rib pressing the bus bar to restrict a movement in a thickness direction of the bus bar, a second rib pressing the bus bar to restrict a movement in a width direction of the bus bar, and a retaining protrusion fitting into a cutout portion provided at both sides in a width direction of the bus bar so as to retain the bus bar in a longitudinal direction of the bus bar.

Abstract: Various embodiments discussed herein can comprises systems or methods that can improve over existing spinning current Hall sensor systems via at least one of interleaving spinning phases or sliding averaging/summing. One example embodiment can comprise a sensor system comprising M (a positive integer) spinning current Hall sensors, each of which has N (an integer greater than one) distinct spinning phases during which it can acquire sensor data, and a multiplexer that can select sensor data of the sensors according to a M×N spinning phase sensor sequence. The M×N distinct spinning phases of the sensor sequence can be interleaved, wherein the average in the time domain of the N spinning phases for each sensor is the same. For each of the M sensors, a sum and/or an average can be determined for one or more most recent representations of sensor data from that sensor.

Abstract: An RFID antenna structure is disclosed that is designed to operate in proximity to metal surfaces. The RFID antenna structure is placed at 90 degrees to the surface of the metallic object, allowing it to operate with minimal separation from the edge of the RFID antenna structure to the metallic object. In another embodiment, the RFID antenna structure comprises an anti-tamper embodiment wherein a RFID tag device is applied to twist and flip-top cap containers, such that tearing along the perforations on the cap disables the RFID tag device.

Abstract: A magnetic sensor circuit includes: one of a first magnetic sensor element configured to output a voltage in accordance with a vertical magnetic field and a second magnetic sensor element configured to output a voltage in accordance with a horizontal magnetic field; a magnetic field signal processing circuit configured to output a signal in accordance with the voltage; at least three terminals capable of being connected to an external element, the at least three terminals being a first, a second, and a third terminal; a first wiring connecting the first terminal and the second terminal; and a second wiring connecting the first terminal and the third terminal in which one of the first magnetic sensor element and the second magnetic sensor element is arranged at a position where detection of a magnetic field generated by one of the first wiring and the second wiring is capable.

Abstract: An apparatus for magnetic field detection comprises a plurality of magnetic field sensitive devices comprising at least a first magnetic field sensitive device, a second magnetic field sensitive device and a third magnetic field sensitive device. The apparatus comprises a power source configured to provide a first supply current through the first magnetic field sensitive device and a second supply current independent of the first supply current through the second magnetic field sensitive device. The first to third magnetic field sensitive devices are coupled such that the first supply current flows through the first magnetic field sensitive device and not through the second magnetic field sensitive device, the second supply current flows through the second magnetic field sensitive device and not through the first magnetic field sensitive device, and a sum of the first supply current and the second supply current flows through the third magnetic field sensitive device.

Abstract: The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type; a first electrode set formed in a surface of the semiconductor layer and including a first drive current supply electrode, a Hall voltage output electrode, and a second drive current supply electrode aligned along a straight line extending in a first direction in this order; and second to fifth electrode sets each having the same configuration as the configuration of the first electrode set and aligned with the first electrode set along a straight line extending in a second direction perpendicular to the first direction. The Hall voltage output electrode has a first depth, the first and second drive current supply electrodes have a second depth that is larger than the first depth.

Abstract: A display panel and a display device reduces the adverse effects on touch function and display function caused by high heat generation of a force-sensing sensor. The display panel includes, in part, a force sensing sensor, an amplification circuit and a drive chip. The force-sensing sensor includes a first input, a second input, a first output and a second output. The amplification circuit is associated with the force-sensing sensor and includes a first amplification input, a second amplification input and at least one amplification output, wherein the first amplification input of the amplification circuit is coupled to the first output of the force-sensing sensor and the second amplification input of the amplification circuit is coupled to the second output of the force-sensing sensor. The drive chip is coupled to the amplification output of the amplification circuit.

Abstract: A method for determining a two-dimensional spectrum of a specified carrier having a specified mobility and density in a material of an electronic device, the method including performing a magnetic field-dependent Hall measurement on the material of the electronic device; determining, using the magnetic field-dependent Hall measurement, a probability density function of a conductance of the material of the electronic device, wherein the probability density function describes a spectrum of a plurality of m-carriers, wherein the plurality of m-carriers includes the specified carrier having the specified mobility and density; and determining an electrical transport of a plurality of electrons and holes inside the material of the electronic device by observing a variation of the probability density function with any of the specified mobility and density of the specified carrier.

Abstract: Methods and apparatus for providing an integrated circuit having a drive current source, a magnetic sensing element coupled to the drive current source, the magnetic sensing element having first and second differential outputs, and first and second current elements to provide respective currents in relation to the drive current source, wherein the first current element is coupled to the first differential output and the second current element is coupled to the second differential output. In illustrative embodiments, an IC output can output a voltage corresponding to the currents of the first and second current elements.

Abstract: A method and apparatus for sensing magnetic field strength with a pair of Hall effect sensors includes sampling a sensed voltage for the Hall effect sensors during a first phase and combining the sensed voltage. During a second phase, obtaining sensed voltages for the Hall effect sensors and combining the sensed voltages. The sensed voltages from the first phase and the second phase are combined to obtain a summed voltage and remove the Hall effect sensor and amplifier offset error value. In one arrangement, the summed voltage corresponds to the sensed Hall voltage of the first Hall effect sensor added to the Hall voltage of the second Hall effect sensor. In another arrangement, the summed voltage corresponds to the sensed Hall voltage of the first Hall effect sensor subtracted by the sensed Hall voltage of the second Hall effect sensor. Changes in the summed voltage with respect to a reference voltage are counted to determine the speed of a rotating shaft having magnets or a similar arrangement.

Abstract: A calibration tool for calibrating a magnetic sensor comprises a cuboid-shaped housing and one or more permanent magnets. The housing is configured to provide six alignment planes. The alignment planes lying opposite to each other extend parallel to each other and the alignment planes lying adjacent to each other include an angle of 90°. The housing has one or more holes allowing to position a magnetic sensor in a working volume located in the center of the housing. The housing may have six sidewalls. One or more of the sidewalls may include one or more adjustable element protruding from the respective sidewall. The adjustable elements may be screws. Permanent magnets of different materials having different temperature coefficients may be used to eliminate the temperature dependence of the magnetic field in the working volume.

Abstract: A Hall element driving circuit includes: a signal switching unit which is disposed between a power supply, which outputs a current, and a Hall element having first and second terminals and performs switching control between a first switching state that supplies the current to the first terminals and a second switching state that supplies the current to the second terminals; a switching control unit that controls transitions between the first switching state and the second switching state; and a switching unit that is disposed between the power supply and the signal switching unit and controls switching between an on state where the current is supplied and an off state where the current is stopped. The switching control unit controls transitions between the on and off states and executes switching control over the signal switching unit only when the switching unit is in the off state.

Abstract: An omnipolar magnetic sensor system includes an input stage and a behavior component. The input stage is configured to receive a source signal and to selectively chop the source signal. Further, the input stage is configured to balance the source signal using behavior parameters and generate a balanced source signal.

Abstract: Embodiments are directed to a two-terminal resistive processing unit (RPU) having a first terminal, a second terminal and an active region. The active region effects a non-linear change in a conduction state of the active region based on at least one first encoded signal applied to the first terminal and at least one second encoded signal applied to the second terminal. The active region is configured to locally perform a data storage operation of a training methodology based at least in part on the non-linear change in the conduction state. The active region is further configured to locally perform a data processing operation of the training methodology based at least in part on the non-linear change in the conduction state.

Abstract: A magnetic sensor for borehole magnetometer includes an upper-opened pipe-shaped housing; a frame installed at an inside of the housing; an upper-opened magnetic sensor part installed at a bottom side of the frame; a lid covering the opened upper side of the magnetic sensor part; and a magnetic sensor disposed at an inside of the magnetic sensor part to measure a magnetic force, wherein an upper side and a bottom side of the magnetic sensor is respectively installed with a spring, a bottom side of the lid and the magnetic sensor part are formed with a fixing groove for fixing an upper spring and a bottom spring each installed at an upper side and a bottom side of the magnetic sensor.

Abstract: A high dynamic range magnetometer architecture and method are disclosed. In an embodiment, a magnetometer sensor comprises: a variable magnetic gain stage including a plurality of selectable signal gain paths, each signal gain path including a magnetic sensor and a magnetic flux concentrator, and for each signal gain path the magnetic flux concentrator being positioned a different distance from the magnetic flux concentrator to provide a different magnetic gain for the signal gain path; a variable magnetic sensing stage coupled to the variable magnetic gain stage, the variable magnetic sensing stage operable to provide variable magnetic sensing to each signal gain path; and a gain control stage coupled to the variable magnetic sensing stage, the gain control stage operable to select one of the signal gain paths and to provide signal conditioning to the selected signal gain path.

Abstract: Systems and methods described herein are directed towards integrating a shield layer into a current sensor to shield a magnetic field sensing element and associated circuitry in the current sensor from electrical, voltage, or electrical transient noise. In an embodiment, a shield layer may be disposed along at least one surface of a die supporting a magnetic field sensing element. The shield layer may be disposed in various arrangements to shunt noise caused by a parasitic coupling between the magnetic field sensing element and the current carrying conductor away from the magnetic field sensing element.

Abstract: A magnetic sensor includes: a magnetic converging plate; Hall elements disposed on one surface side of the magnetic converging plate; wires connecting with the Hall elements; and a signal processing circuit that connects with these wires to receive a signal from the Hall element. Between the Hall element and the signal processing circuit, the two wires cross while being spaced apart from each other in a depth direction of a substrate, and forms a compensation loop between a cross of the two wires and the circuit, and in a planar view as seen in a depth direction, at least part of a region occupied by the compensation loop is covered by the magnetic converging plate. The compensation loop compensates an induced electromotive force caused to the closed loop formed by the wires including the Hall element.

Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; providing n-type dopant in the first and second n-type wells; and providing p-type dopant in the p-type well and the first n-type well.

Abstract: A magnetic sensor circuit includes: a first Hall element configured to output a first signal and a second signal; a second Hall element configured to output a third signal and a fourth signal; a signal switching unit configured to select signals among the first to the fourth signal to provide at least two different types of signals as first output signals, by selecting signals each having the signal component having the opposite phase when the offset components each have the same phase, and by selecting signals each having the signal component having the same phase when the offset components each have the opposite phase; and a signal processing unit configured to output second output signals in which the respective offset components of the first output signals are reduced.

Abstract: A current sensing assembly includes a conductor having a first side, a second side opposite the first side, a third side, and a fourth side opposite the third side. The first side has a first notch formed therein and the second side has a second notch formed therein opposite the first notch. The current sensing assembly also includes a sensor assembly including a first magnetic sensor disposed in the first notch or proximate to the third side of the conductor between the first and second notches, and a second magnetic sensor disposed in the second notch or proximate to the fourth side of the conductor between the first and second notches.

Abstract: An integrated current sensor system has a printed circuit board with a magnetic field sensor with a sensor interface. The printed circuit board has a first side on which, isolated from the printed circuit board, a first current conductor is arranged with a longitudinal edge of a portion of the first current conductor being proximate to a sensitive area of sensor. The circuit board has a second side on which a second current conductor is, isolated from the printed circuit board, arranged, wherein a longitudinal edge of a portion of the second current conductor is arranged proximate to the sensitive area. The first and the second current conductor are electrically connected with at least one conductive via.

Abstract: Embodiments relate to vertical Hall effect devices comprising Hall effect structures with three contacts in each Hall effect region. In one embodiment, the contacts are interconnected with terminals such that the Hall effect device has symmetry and nominally identical internal resistances in the absence of externally applied magnetic fields. Embodiments are capable of operating in multiple operating phases, such that spinning can be used to measure field redundantly and improve magnetic field measurement accuracy.

Abstract: A system is provided, comprising: a magnet flux sensor; a first conductor proximate to the magnetic field sensor; a current controller coupled to the first wire; a second conductor proximate to the magnetic field sensor; wherein the first current controller and the second current controller ensure that current do not travel in opposite directions.

Abstract: One embodiment of an enhanced flux-density magnet comprises a magnetic material with two magnetic poles and one magnetic pole-area smaller than the other magnetic pole-area. Because the magnetic field at both pole-areas is equal but the magnetic pole-areas are unequal, the magnetic flux-density is proportionally greater at the magnetic pole with a smaller area than the magnetic pole with the larger area and greater than if the magnetic pole-areas were equal.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: The present embodiment relates to a Hall electromotive force signal detection circuit. The third switch circuit selects a terminal position for applying a driving current out of four terminals of the third Hall element and switches the terminal position among the first terminal, the second terminal, the fourth terminal, and the third terminal in this order. The fourth switch circuit switches a terminal position for applying the driving current to the terminal in turn, among the first to the fourth terminal of the fourth Hall element, such that this terminal position is different from that selected by the third switch circuit and faces the terminal position for injecting the driving current in the third Hall element. A chopper clock generation circuit supplies a chopper clock signal with different four phases to the third switch circuit and to the fourth switch circuit.

Abstract: In one aspect, a magnetic field sensor includes first and second magnetic field sensing elements having respective first and second maximum response axes. The first and second maximum response axes point along respective first and second different coordinate axes. In response to a magnetic field, the first and second magnetic field sensing elements are operable to generate first and second magnetic field signals. The magnetic field sensor includes an electronic circuit coupled to receive the first and the second magnetic field signals. The electronic circuit is configured to determine a magnitude of a vector sum of the first and the second magnetic field signals and provide one or more signals in response to the magnitude of the vector sum determined.

Abstract: A Hall element is integrated on a single substrate and is capable of cancelling offset voltage with a spinning switch configured to switch spinning current and capable of simultaneously detecting a horizontal direction magnetic field and a vertical direction magnetic field. The Hall element has a four-fold rotational axis and includes a P-type semiconductor substrate layer formed of P-type silicon, a vertical magnetic field detection N-type doped region formed on the P-type semiconductor substrate layer, and eight horizontal magnetic field detection N-type doped regions formed so as to surround the vertical magnetic field detection N-type doped region.

Abstract: Magnetic field sensors and associated techniques use a Hall effect element in a chopping arrangement in combination with a feedback path configured to reduce undesirable spectral components generated by the chopping.