Abstract: A device and method are presented for implementing one or more logic functions. The device comprises one or more basic blocks, each comprising a predetermined number of charged particle inputs, at least one interaction zone defining a function space, and at least one charged particle output at a certain distance from the interaction zone. The logic function is a result of an affected interaction between the charged particles.

Abstract: A flip-flop operating with standard threshold voltage MOS devices as compared with high threshold voltage MOS devices may have improved speed performance, but greater leakage current. Likewise, a flip-flop operating with high threshold voltage MOS devices may reduce the leakage current and have better power efficiency, but decreased speed and performance. An optimized flip-flop may include a combination of standard threshold voltage MOS devices and high threshold voltage MOS devices. The optimized flip-flop may have less leakage during stand-by mode as compared to a flip-flop with standard threshold voltage MOS devices. In addition, the optimized flip-flop may have better performance and speed as compared to a flip-flop with high threshold voltage MOS devices.

Abstract: An avionics system configurable through software to support more than one pin-out design. An exemplary system includes configuration pins that receive one or more signals from an external source, one or more subcircuits, one or more multipurpose input/output pins, a controller that determines a configuration mode based on one or more received signals, and a selection circuit that connects one of the subcircuits with one or more of the multipurpose input/output pins, based on the determined configuration mode.

Abstract: Flexible, space-efficient I/O architectures for integrated circuits simplify circuit design and shorten design times. In one aspect, cells for power supply pads are eliminated, in part by locating ESD protection circuitry for these pads underneath the pads themselves, leaving only signal I/O buffers. Pads coupled to the signal I/O buffers may be defined as either signal I/O pads or power supply pads in accordance with customization circuitry. Customization circuitry also provides for flexible bank architectures, where signal I/O buffers within a bank share power supply requirements that may be different from power supply requirements of signal I/O buffers of another bank. The number of banks and the number of signal I/O buffers belonging to each bank is flexibly defined. Customization circuitry also provides for flexible pad options, whereby the IC pads may be configured for different packaging technology, for example, for wire bonding for flip-chip bonding, or for other types of bonding.

Abstract: A programmable semiconductor device includes a user programmable switch comprising a configurable element positioned above a transistor material layer deposited on a substrate layer.

Abstract: A method and system provide and program a nonvolatile logic device. The nonvolatile logic device includes input and output magnetic junctions and at least one magnetic junction between the input and output magnetic junctions. The input magnetic junction includes an input junction free layer having an input junction easy axis. The input magnetic junction may be switchable using a current driven through the magnetic junction. The output magnetic junction includes an output junction free layer having an output junction easy axis. Each of the magnetic junction(s) includes a free layer having an easy axis. The input magnetic junction is magnetically coupled to the output magnetic junction through the magnetic junction(s). In some aspects, the method includes switching the magnetic moment(s) of the input magnetic junction from a first state to a second state, applying and then removing magnetic field(s) along the hard axis of the at least one magnetic junction.

Abstract: A signal processing device includes a continuous film, a plurality of spin wave generators, and at least one signal detector. The continuous film includes at least one magnetic layer. The plurality of spin wave generators are provided on the continuous film in such a manner as to be in direct contact with the continuous film or be in contact with the continuous film while having an insulation layer interposed therebetween, and each has a contact surface with the continuous film in a dot shape and generates a spin wave in a region of the magnetic layer of the continuous film by receiving an input signal, the region being immediately under the contact surface. The signal detector is provided on the continuous film and detects, as an electrical signal, the spin waves generated by the spin wave generators and propagating through the continuous film.

Abstract: The present disclosure provides an integrated circuit design method. In an example, a method includes receiving an integrated circuit design layout that includes an active region feature, a contact feature, and an isolation feature, wherein a portion of the active region feature is disposed between the contact feature and the isolation feature; determining whether a thickness of the portion of the active region feature disposed between the contact feature and the isolation feature is less than a threshold value; and modifying the integrated circuit design layout if the thickness is less than the threshold value, wherein the modifying includes adding a supplementary active region feature adjacent to the portion of the active region feature disposed between the contact feature and the isolation feature.

Abstract: An impedance calibration circuit for impedance matching between a semiconductor memory device and an external device includes a driving circuit and a comparing circuit. The driving circuit has a plurality of internal resistances, with one or more of the internal resistances being a variable resistance. The driving circuit compares the impedance of the internal resistances to the input/output impedance of the external device in order to provide a calibration voltage. The comparing circuit compares the calibration voltage to a reference voltage and provides a code signal for calibrating the impedance corresponding to output data with the input/output impedance of the external device. The impedance calibration circuit calibrates an impedance mismatch between the impedance calibration circuit and a data input/output driver by adjusting the impedance of the impedance calibration circuit through the variable resistance.

Abstract: Methods and apparatus for routing signal paths in an integrated circuit. One or more signal routing paths for transferring signals of the integrated circuit may be determined. A dummy fill pattern for the integrated circuit may be determined based on the one or more metal density specifications and at least one design rule for reducing cross coupling capacitance between the dummy fill pattern and the routing paths. The signal routing paths and/or the dummy fill pattern may be incrementally optimized to meet one or more timing requirements of the integrated circuit.

Abstract: Methods and/or associated devices and/or systems for creating integrated circuits (IC's) that have multiple connected I/O regions that can be designed and implemented using commonly available standard I/O libraries in conjunction with standard IC design flows and tools and in combination with one or more novel standardized I/O region interconnect cells for interconnecting between or through otherwise separated I/O regions. Specific embodiments support a wide variety of IC's that can be developed using standard libraries and design flows including: application specific integrated circuits (ASIC's), programmable logic devices (PLDs), custom IC's, analog IC's, CPU's, GPU's, and other IC's that require large numbers of input/ouput (IO) circuits while having relatively small core circuitry areas. Specific embodiments may involve innovative I/O cell functions, innovative IC topologies, and innovative IC packaging solutions for single die packages and multiple die packages.

Abstract: A reversible, switched capacitor voltage conversion apparatus includes a plurality of individual unit cells coupled to one another in stages, with each unit cell comprising multiple sets of inverter devices arranged in a stacked configuration, such that each set of inverter devices operates in separate voltage domains wherein outputs of inverter devices in adjacent voltage domains are capacitively coupled to one another such that a first terminal of a capacitor is coupled to an output of a first inverter device in a first voltage domain, and a second terminal of the capacitor is coupled to an output of a second inverter in a second voltage domain; and wherein, for both the first and second voltage domains, outputs of at least one of the plurality of individual unit cells serve as corresponding inputs for at least another one of the plurality of individual unit cells.

Abstract: An interconnected array of reconfigurable logic cells which carry out at least one logic function, externally connected to peripheral connection network equipped with switch boxes and connected to programmable input/output blocks. The logic cells are distributed in a first dimension in rows i with i=1 to d and a second dimension in columns j with j=1 to w, with d?2 and w=2 or d=2 and w?2, each logic cell including a second input, a second input, a first output and a second output, the first input of each logic cell and the first output of each logic cell being connected to the connection network, the second input and the second output of each logic cell being connected to other different column and row logic cells except for the first and last rows or columns for d>2 or w>2 respectively.

Abstract: A semiconductor integrated circuit includes: a main-interconnect to which supply voltage or reference voltage is applied; a plurality of sub-interconnects; a plurality of circuit cells configured to be connected to the plurality of sub-interconnects; a power supply switch cell configured to control, in accordance with an input control signal, connection and disconnection between the main-interconnect and the sub-interconnect to which a predetermined one of the circuit cells is connected, of the plurality of sub-interconnects; and an auxiliary interconnect configured to connect the plurality of sub-interconnects to each other.

Abstract: A reconfigurable integrated circuit (IC) has IC interface terminals including circuit input terminals and circuit output terminals. A bypass controller and bypass circuitry are coupled to each other, and to at least one of the circuit input terminals and at least one of the circuit output terminals. A processing circuit has multiple circuit modules coupled to the bypass circuitry. The processing circuit is coupled to at least one of the circuit input terminals and at least one of the circuit output terminals. In operation the bypass controller controls the bypass circuitry to selectively couple at least one pair of the IC interface terminals together, the pair including one of the circuit input terminals and one of the circuit output terminals. When the pair of IC interface terminals are coupled together, at least one of the circuit modules is selectively de-coupled from the pair of the IC terminals.

Abstract: High speed precessionally switched magnetic logic devices and architectures are described. In a first example, a magnetic logic device includes an input electrode having a first nanomagnet and an output electrode having a second nanomagnet. The spins of the second nanomagnet are non-collinear with the spins of the first nanomagnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes. In a second example, a magnetic logic device includes an input electrode having an in-plane nanomagnet and an output electrode having a perpendicular magnetic anisotropy (PMA) magnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes.

Abstract: Programmable integrated circuits with configurable logic circuitry and routing resources are provided. Portions of the routing resources on a programmable integrated circuit may be used in implementing a desired user-specified custom logic function, whereas other portions of the routing resources on the programmable integrated circuit may be unused. The unused routing resources may include adjacent pairs of routing paths. These paths may be coupled to control circuitry configured to drive the routing paths to desired voltage levels to provide an optimal amount of decoupling capacitance. In one suitable arrangement, two adjacent routing paths may both be driven to a positive power supply voltage level. In another suitable arrangement, the two adjacent routing paths may be driven to the positive power supply voltage level and a ground power supply voltage level, respectively.

Abstract: A L-level permutable switching network (L-PSN) having switches and multiple levels of conductors that are used to connect a first plurality of conductors to other multiple sets of conductors within respective interconnect resources constraints. The L-PSN can be applied in a wide range of applications, in tandem or hierarchically, to provide a large switch network used in network, routers, and programmable logic circuits. The L-PSN is used to connect a first set of conductors, through the L-PSN, to multiple sets of conductors in a given logic circuit hierarchy whereby the conductors in each of the multiple sets are equivalent or exchangeable, which in term, by construction, makes the first set of conductors equivalent when used in the next level of circuit hierarchy. The L-PSN is scalable for large sized sets of conductors and can be used in tandem or hierarchically to enable programmable interconnections among large sized circuits.

Abstract: A gate interconnection portion includes a first gate interconnection portion, a second gate interconnection portion, and a third gate interconnection portion. The first gate interconnection portion is formed in parallel to a Y axis direction toward a power supply interconnection and extends to a prescribed position within an element formation region. The second gate interconnection portion is formed in parallel to a direction obliquely bent with respect to the Y-axis direction from the first gate interconnection portion toward the power supply interconnection, and extends across a boundary between the element formation region and an element isolation insulating film, which is in parallel to an X axis direction. The third gate interconnection portion further extends in parallel to the Y-axis direction from the second gate interconnection portion toward the power supply interconnection.

Abstract: An integrated circuit (IC) design includes configurable circuits arranged in a mesh structure to facilitate routing of signals between different platforms or logic blocks within the design. Each configurable circuit has a semiconductor element with input and output terminals in a first semiconductor layer, input/output (I/O) ports corresponding to directions of the mesh structure in a second semiconductor layer, configurable input vias to allow a signal traveling in a first direction to be received, and configurable output vias that allow an output signal to be output from the configurable circuit in a second direction.

Abstract: A nanomagnetic logic gate arranged on a substrate according to an embodiment includes at least one nanomagnetic first structure, at least one nanomagnetic second structure and at least two layers including a first layer and a second layer, wherein at least one first structure is arranged in the first layer on or parallel to a main surface of the substrate, wherein at least one second structure is arranged in the second layer parallel to the first layer, and wherein at least one second structure includes an artificial nucleation center arranged such that a magnetic field component essentially perpendicular to the main surface provided by at least one first structure couples to the artificial nucleation center such that a magnetization of the second structure is changeable in response to the magnetic field component coupled into the artificial nucleation center, when a predetermined condition is fulfilled.

Abstract: Nanoelectromechanical logic devices can include a plurality of flexible bridges having control and logic electrodes. Voltages applied to control electrodes can be used to control flexing of the bridges. The logic electrodes can provide logical functions of the applied voltages.

Abstract: Methods and apparatus are provided for allowing components such as buffers, multiplexers, ingress cores, etc. on a device such as a programmable chip to configure themselves based on parameter information. In some examples, self-configuring components obtain parameter information from adjacent components. In other examples, self-configuring components obtain parameter information from a system environment or a processor register. Component self-configuration can occur at a variety of times including preprocessing, simulation, and run-time.

Abstract: A clock distribution system for a multi-bit latch. The clock distribution system may include a plurality of branches, each connected to a common clock input. Each branch may be driven by an input clock buffer. Each branch may be connected to clock inputs of a predetermined number of latch stages within the multi-bit latch. A predetermined number of clock branches may include a clock output buffer. The number of clock output buffers may be less than the total number of latch stages. In this manner the clock distribution system may reduce the feed through capacitance of the latch stages, which may mitigate the latch transition skew for each latch stage.

Abstract: The invention provides a reduced complexity layout style based on applying a limited set of changes to an underlying repeated base template. With the templates properly defined in accordance with the characteristic features disclosed, the invention enables efficient implementation of logic circuitry, with a dramatic reduction in the pattern complexity (or number of unique layout patterns at each mask level) for realistically sized designs. This reduction in pattern complexity that the invention provides is particularly important for advanced and emerging semiconductor processes, because it enables effective use of SMO and full-chip mask optimization.

Abstract: Apparatuses and methods are described that include a plurality of drivers corresponding to a single via. A number of drivers can be selected to operate individually or together to drive a signal through a single via. Additional apparatus and methods are described.

Abstract: In one aspect, the invention relates to programmable logic that utilizes one or more of magnetic diodes. By changing magnetic fields generated in the magnetic diodes due to input signals, the programmable logic can be changed from one logic gate to another logic gate. The unique feature leads to field reprogrammable logic devices in which simple instructions can be used to construct a whole new set of logic gates.

Abstract: A system and method for efficiently addressing dies in a three-dimensional stacked integrated circuit. Multiple stacked dies may be included in a single package or module. At least two of the dies are vertically stacked. One or more of the dies may include die enumeration logic that generates a unique die address space identifier (ID) for a particular die. Unless a die is a base die, each die receives a unique die ID for itself from a die placed below itself. The die then generates a unique die ID for one or more dies placed above itself and sends these die IDs to the dies located on top of itself. If a die is a base die, then the logic may receive a root value for a first unique die ID within the vertical stack from the package substrate or silicon based interposer beneath it.

Abstract: The present disclosure provides an integrated circuit design method. In an example, a method includes receiving an integrated circuit design layout that includes an active region feature, a contact feature, and an isolation feature, wherein a portion of the active region feature is disposed between the contact feature and the isolation feature; determining whether a thickness of the portion of the active region feature disposed between the contact feature and the isolation feature is less than a threshold value; and modifying the integrated circuit design layout if the thickness is less than the threshold value, wherein the modifying includes adding a supplementary active region feature adjacent to the portion of the active region feature disposed between the contact feature and the isolation feature.

Abstract: A cell-based architecture for an integrated circuit. A row of cell instances borders a first adjacent row of cell instances along a first boundary and a second adjacent row of cell instances along a second boundary. A first power rail (e.g., carrying an auxiliary voltage) extends along the first boundary. A second power rail (e.g., VSS) extends along the second boundary. The second power rail is wider than the first power rail. Additionally, a third power rail (e.g., VDD) extends across the interior of the second row of cells.

Abstract: A semiconductor device which stores data, and in which refresh operation is not needed, is described. The semiconductor device comprises at least a transistor and a capacitor. A first electrode of the capacitor is connected to a reference voltage terminal and a second electrode of the capacitor is connected to one of a source and a drain of the transistor. The semiconductor device is configured to put, when necessary, the other of the source and the drain of the transistor to the same potential as the one of the source and the drain, so that charge accumulated in the capacitor, which is connected to the one of the source and the drain of the transistor, does not leak through the transistor.

Abstract: A multiplexer-based network provides the routing equivalent to a non-blocking crossbar network having a plurality of crossbar switches making up an ingress, middle, and egress stages. The non-blocking crossbar network includes crossbar rows, each including outbound and inbound internal connections to another crossbar row. The multiplexer-based network includes multiplexer-based network rows. Each multiplexer-based network row corresponds to a crossbar row of the crossbar network and includes at least one global input, at least one global output, internal inputs, internal outputs, and a corresponding set of multiplexers. Each set of multiplexers includes an internal multiplexer for each respective outbound internal connection of the respective crossbar row. The internal multiplexer includes inputs for signals routable to the respective outbound internal connection. At least one global multiplexer provides a signal to a global output of the multiplexer-based network row.

Abstract: An integrated circuit (IC) including a core area containing active devices and at least one input/output (I/O) cell configured to transfer signals into and out of the core area. The at least one I/O cell includes a gate orientation, a pre-driver module, and at least one post-driver module. The pre-driver module and the at least one post-driver module are offset from each other by an angle between zero and ninety degrees with respect to the gate orientation. The gate orientation for every one of the at least one I/O cell is substantially the same.

Abstract: A configurable die stack arrangement including a first configurable integrated circuit die located on a first substrate. The first configurable integrated circuit die includes a first array and a first configuration memory management circuit that includes an interface to the first array. The first array includes a first logic element and a first configuration memory. The configurable die stack arrangement also includes a second configurable integrated circuit die located on a second substrate that is different than the first substrate. The second configurable integrated circuit die includes a second array and a second configuration memory management circuit that includes an interface to the second array. The second array includes a second logic element and a second configuration memory. A signal is coupled to the first configuration management circuit and to the second configuration management circuit, and the first configuration memory management circuit includes circuitry to control the signal.

Abstract: Method and apparatus for voltage level shifters (VLS) design in bulk CMOS technology. A multi-voltage circuit or VLS that operate with different voltage levels and that provides area and power savings for multi-bit implementation of level shifter design. A two-bit VLS to shift bits from a first voltage level logic to a second voltage level logic. The VLS formed with a first N-well in a substrate. The VLS formed with a second N-well in the substrate, adjacent to a side of the first N-well. The VLS formed with a third N-well in the substrate, adjacent to a side of the first N-well and opposite the second N-well. A first one-bit VLS circuit having a portion formed on the first N-well and a portion formed on the second N-well. A second bit VLS circuit having a portion formed on the first N-well and a portion formed on the third N-well.

Abstract: A logic device includes a transmission gate block configured to receive a binary input and a control input, the transmission gate block configured to provide a multi-bit output that is correlated from the binary input and in response to the control input having a first value. A state driver block is activated to drive one of a low state bit pattern or a high state bit pattern to the multi-bit output in response to the control input having a second value, which is different from the first value.

Abstract: The present invention relates to a digital signal processing circuit, and more particularly, to a method and apparatus for generating a maximum value or a minimum value used for designing the digital signal processing circuit. An apparatus for obtaining a maximum value or a minimum value from N digital input signals may include N×W bit processing elements to receive an input of W bits of each of the N digital input signals, W OR operators to receive an input of N operation values output from bit processing elements, and to perform an OR operation, respectively, and W inverters to invert an output value for each of the W OR operators.

Abstract: Digital circuits are disclosed that may include multiple transistors having controllable current paths coupled between first and second logic nodes. One or more of the transistors may have a deeply depleted channel formed below its gate that includes a substantially undoped channel region formed over a relatively highly doped screen layer formed over a doped body region. Resulting reductions in threshold voltage variation may improve digital circuit performance. Logic circuit, static random access memory (SRAM) cell, and passgate embodiments are disclosed.

Abstract: To include an output terminal, unit buffers, and plural output-wiring paths that respectively connect the unit buffers and the output terminal. The output wiring paths have individual output wiring sections individually allocated to corresponding unit buffers. Unit buffers corresponding to these output wiring paths are common output wiring sections shared by the output wiring paths, and are connected to the output terminal without via a common output wiring section having a higher resistance value than those of the individual output wiring sections. Accordingly, an deviation of impedance due to a parasitic resistance between the output terminal and the unit buffers is suppressed.

Abstract: An integrated circuit, a method of generating a layout of such an integrated circuit using standard cells, and a standard cell library providing such standard cells, are disclosed. The method of generating the layout comprises forming a plurality of rows, and populating each row with a plurality of standard cells chosen in dependence on the functional components required by the integrated circuit, each standard cell having its abutment area abutting the abutment area of at least one adjacent standard cell in the row. Within each row, each standard cell in that row is arranged to have a voltage connection area that is aligned with a common routing track, but with each standard cell having its voltage connection area configured so as not to extend across the entire width of the standard cell.

Abstract: An embodiment of a circuit is described that includes a first inductor comprising a first end and a second end, where the first end of the first inductor forms an input node of the circuit. The embodiment of the circuit further includes a second inductor comprising a first end and a second end, where the second end of the first inductor is coupled to the first end of the second inductor forming an output node of the circuit; a resistor coupled to the second end of the second inductor; and an electrostatic discharge structure coupled to the output node and configured to provide an amount of electrostatic discharge protection, where the amount of electrostatic discharge protection is based on a parasitic bridge capacitance and a load capacitance metric.

Abstract: A random access memory circuit adapted for use in a field programmable gate array integrated circuit device is disclosed. The FPGA has a programmable array with logic modules and routing interconnects programmably coupleable to the logic modules and the RAM circuit. The RAM circuit has three ports: a first readable port, a second readable port, and a writeable port. The read ports may be programmably synchronous or asynchronous and have a programmably bypassable output pipeline register. The RAM circuit is especially well adapted for implementing register files. A novel interconnect method is also described.

Abstract: An integrated circuit containing CMOS logic gates and a logic-cell-compatible decoupling capacitor adjacent to the logic gates, in which the decoupling capacitor includes p+/n and n+/p capacitors, resistors between 1 and 1000 ohms connecting the capacitors to Vdd and Vss buses, and gate elements which have widths and spacings similar to the adjacent logic gates. A process of forming an integrated circuit containing CMOS logic gates and a logic-cell-compatible decoupling capacitor adjacent to the logic gates, in which the decoupling capacitor includes p+/n and n+/p capacitors, resistors between 1 and 1000 ohms connecting the capacitors to Vdd and Vss buses, and gate elements which have widths and spacings similar to the adjacent logic gates.

Abstract: A multi-operation mode application specific integrated circuit (ASIC) implemented in fully-depleted silicon-on-insulator (FDSOI) includes an ASIC implemented in FDSOI having a plurality of operating modes, plurality of power rails, and a power supply that provides voltages for the first and second rails corresponding to the plurality of operating modes. The power rails include at least one VDD rail, at least one Vss rail, a first rail for biasing a NGP region of PMOS transistor devices in the ASIC, and a second rail for biasing a PGP region of NMOS transistor devices in the ASIC.

Abstract: An information generating apparatus and an operation method thereof are provided. The information generating apparatus includes a first logic contact, a second logic contact, an information output contact and a plurality of switches SW(i,j), wherein SW(i,j) represents a jth switch in an ith layer, 1?i?L, and 1?j?2(i?1). The switch SW(i,j) has a first input terminal, a second input terminal and an output terminal, wherein the output terminal is selectively connected to the first or the second input terminal. The first and the second input terminals of the switches SW(Lj) in the Lth layer are respectively connected to the first logic contact and the second logic contact. The first and the second input terminals of the switch SW(i,j) in other layers are respectively connected to the output terminals of the switches SW(i+1,2j?1) and SW(i+1,2j). The output terminal of the switch SW(1,1) is connected to the information output contact.

Abstract: An apparatus for reconfigurable computing logic implemented by an innovative memristor based computing architecture. The invention employs a decoder to select memristor devices whose ON/OFF impedance state will determine the reconfigurable logic output. Thus, the resulting circuit design can be electronically configured and re-configured to implement any multi-input/output Boolean logic computing functionality. Moreover, the invention retains its configured logic state without the application of a current or voltage source.

Abstract: A non-blocking routing network includes a plurality of external inputs and external outputs. Each row of a first plurality of routing rows provides a routing path from at least one of the external inputs to at least one of the external outputs and includes first through fourth multiplexers. Each row of a second plurality of routing rows provides a routing path from at least two of the external inputs to at least two of the external outputs. Each routing row of the second plurality of routing rows contains at least one less multiplexer relative to a routing row of the first plurality of routing rows, the one less multiplexer corresponding to at least two external inputs or two external outputs that are logically equivalent to one another.

Abstract: A method of increasing an initial threshold voltage (Vt) of selected devices. The method includes designing devices with desired antenna effects and adjusting an increase in Vt of some devices to specific values. The desired antenna effects produce a desired threshold voltage of the devices.

Abstract: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

Abstract: A circuit base cell is for implementing an engineering change order (ECO) obtained on a semiconductor substrate. The base cell may include a PMOS transistor having a first active region obtained in a first diffusion P+ layer implanted in an N-well provided for on the substrate, and an NMOS transistor having a second active region obtained in a second diffusion N+ layer implanted on the substrate in such a manner as to be electrically insulated from the first diffusion P+ layer. The cell may be characterized in that the active regions and the diffusion layers are aligned therebetween with respect to a reference axis and they are extended symmetrically in the direction orthogonal to the axis. A first and a second width may be associated with the active regions and to the diffusion layers, respectively. The first and second width may be greater than a width of the cell, which is equivalent to a pitch of the standard minimum cell.