Abstract: In order to reduce power consumption, an arithmetic circuit having a function of performing a logic operation processing based on an input signal, storing a potential set in accordance with the result of the logic operation processing as stored data, and outputting a signal with a value corresponding to the stored data as an output signal. The arithmetic circuit includes an arithmetic portion performing the logic operation processing, a first field-effect transistor controlling whether a first potential, which is the potential corresponding to the result of the logic operation processing is set, and a second field-effect transistor controlling whether the potential of the output signal data is set at a second potential which is a reference potential.

Abstract: A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Abstract: A circuit includes E-mode transistors with gate-source junction, a D-mode transistor with gate-source junction. A component generates a voltage drop between the source of the D-mode transistor and the drain of an E mode transistor provided as a signal output. A connection is made between this drain of the E-mode transistor and the gate of the D-mode transistor, and a signal input at the gates of the E-mode transistors.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: Each of a plurality of inverters includes: a first transistor having one end connected to a first terminal; and a second transistor having one end connected to a second terminal and the other end connected to the other end of the first transistor. The first transistors included in the inverters located at either odd-number orders or even-number orders counted from an input terminal side of an inverter chain circuit become conductive when a pre-charge signal has a first state to pre-charge the other end of the first transistors, and become non-conductive when the pre-charge signal has a second state.

Abstract: The circuit includes an E-mode transistor with gate-source junction, a D-mode transistor with gate-source junction, a component generating a voltage drop between the source of the D-mode transistor and the drain of the E-mode transistor, and a connection between the drain of the E-mode transistor and the gate of the D-mode transistor. The gate of the E-mode transistor is provided for an input signal, and the drain of the E-mode transistor is provided for an output signal.

Abstract: In described embodiments, a timestamp generator includes a fixed clock domain driven by a fixed frequency clock, a core clock domain, coupled to the fixed clock domain, which is driven by a core clock whose frequency is adjustable during an operation of the timestamp generator. A timestamp logic operating in the core clock domain generates a timestamping output of the timestamp generator. A rate generator operating in both the fixed clock domain and the core clock domain generates per clock cycle increments in the fixed clock domain and transfers carry units from the fixed clock domain into the core clock domain, and a timestamp increment generation of the timestamp logic is clocked by the fixed frequency clock provided by the rate generator. A method for enabling timestamp in an ASIC to be accurate with system clock changes is also described.

Abstract: A novel logic circuit in which data is held even after power is turned off is provided. Further, a novel logic circuit whose power consumption can be reduced is provided. In the logic circuit, a comparator comparing two output nodes, a charge holding portion, and an output-node-potential determining portion are electrically connected to each other. Such a structure enables data to be held in the logic circuit even after power is turned off. Further, the total number of transistors in the logic circuit can be reduced. Furthermore, the area of the logic circuit can be reduced by stacking a transistor including an oxide semiconductor and a transistor including silicon.

Abstract: A tunnel transistor is provided including a drain, a source and at least a first gate for controlling current between the drain and the source, wherein the first sides of respectively the first and the second gate dielectric material are positioned substantially along and substantially contact respectively the first and the second semiconductor part.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: PICA test circuits are shown that include a first transistor and a second transistor laid out drain-to-drain, such that a gap between respective drain regions of the first and second transistors has a minimum size allowed by a given fabrication technology; a first NOR gate having an output connected to the drain region of the first transistor and accepting a first select signal and an input signal; and a second NOR gate having an output connected to the drain region of the second transistor and accepting a second select signal and the input signal. One of said NOR gates biases the connected transistor's drain region, according to the select signal of said NOR gate, to inhibit an optical emission when said connected transistor is triggered.

Abstract: A semiconductor device in which an input terminal is electrically connected to a first terminal of a first transmission gate; a second terminal of the first transmission gate is electrically connected to a first terminal of a first inverter and a second terminal of a functional circuit; a second terminal of the first inverter and a first terminal of the functional circuit are electrically connected to a first terminal of a second transmission gate; a second terminal of the second transmission gate is electrically connected to a first terminal of a second inverter and a second terminal of a clocked inverter; a second terminal of the second inverter and a first terminal of the clocked inverter are electrically connected to an output terminal; and the functional circuit includes a data holding portion between a transistor with small off-state current and a capacitor.

Abstract: A CMOS logic integrated circuit includes a level shifter and a CMOS logic circuit. The level shifter converts a signal of a first logic level to a signal of a second logic level. The signal of the first logic level changes between a first low potential and a first high potential higher than the first low potential. The signal of the second logic level changes between the first low potential and a second high potential higher than the first high potential. The CMOS logic circuit includes a first N-channel type MOSFET and a second N-channel type MOSFET. The second N-channel type MOSFET is connected in series with the first N-channel type MOSFET. A first signal of the first logic level is input into a gate of the first N-channel type MOSFET. A second signal of the second logic level has an inversion relationship with the first signal.

Abstract: An integrated circuit including a first level shifter configured to receive a first input signal and a first power supply signal, and to output a first output signal. The integrated circuit further includes a first inverter configured to receive the first output signal, and to output a first inverter signal. The integrated circuit further includes a second level shifter configured to receive a second input signal and a second power supply signal, and to output a second output signal, wherein a voltage level of the second power supply signal is different from a voltage level of the first power supply signal. The integrated circuit further includes a second inverter configure to receive the second output signal, and to output a second inverter signal. The integrated circuit further includes an output buffer configured to receive the first inverter signal and the second inverter signal, and to output a buffer output signal.

Abstract: A dynamic logic circuit includes an N channel transistor stack between a dynamic node and a first power supply terminal for receiving a plurality of logic signals. A P channel clock transistor is coupled between a second power supply terminal and the dynamic node is for receiving a clock signal. An N channel clock transistor is in series with the N channel stack and is between the dynamic node and the first power supply terminal is for receiving the clock signal. A keeper transistor has a first current electrode coupled to the dynamic node, a second current electrode coupled to a second power supply terminal, and a control electrode. A static logic circuit has an output for providing an output responsive to a state of the logic signals. The output is coupled to the control electrode of the keeper transistor.

Abstract: A dynamic logic circuit includes an N channel transistor stack between a dynamic node and a first power terminal for receiving a plurality of logic signals. A first clock transistor is coupled between a second power terminal and the dynamic node for receiving a clock signal. A second clock transistor is in series with the N channel stack, between the dynamic node and a second power terminal, and for receiving the clock signal. An inverter circuit has an input coupled to the dynamic node and an output. A keeper transistor has a control electrode coupled to the output of the inverter circuit, a first current electrode coupled to the dynamic node, and a second current electrode. A plurality of P channel transistors, which are coupled in parallel, are coupled between the keeper transistor and the second power terminal and are for receiving the plurality of logic signals.

Abstract: An inverter circuit includes: first to third transistors; and first and second capacity elements. The first transistor makes/breaks connection between an output terminal and a first voltage line in response to potential difference between an input terminal and the first voltage line or its correspondent. The second transistor makes/breaks connection between a second voltage line and the output terminal in response to potential difference between a gate of the second transistor and the output terminal or its correspondent. The third transistor makes/breaks connection between a gate of the second transistor and a third voltage line in response to potential difference between the input terminal and the third voltage line or its correspondent. The first and second capacity elements are inserted in series between the input terminal and the gate of the second transistor. A junction between the first and second capacity elements is connected to the output terminal.

Abstract: An integrated circuit ECO base cell module is formed with PMOS and NMOS gate electrode structures and power supply lines that are electrically separated from one another up to the second metal (M2) layer in a fixed circuit structure that may be reconfigured with one or more conductor elements formed above the M2 layer to form a predetermined circuit function.

Abstract: A semiconductor integrated circuit device includes: a first inverter constituted by a first transistor configured to charge a charge point based on an input signal, and a second transistor configured to discharge a discharge point based on the input signal; a P-type third transistor and an N-type fourth transistor with drain-source paths provided in parallel between the charge point and the discharge point; and a second inverter configured to invert a potential of the charge point or the discharge point and supply the inverted potential to gates of the third and fourth transistors, and obtain a delay signal of the input signal from the charge point or the discharge point. The semiconductor integrated circuit device secures a sufficient delay time with a small area.

Abstract: A device includes first through third logic circuits. Each of first and second logic circuits includes a first circuit portion generating a first output signal in response to a first input signal when a second input signal takes a first logic level, and a second circuit portion transferring the first input signal to output the first output signal when the second input signal takes a second logic level. The third logic circuit includes a third circuit portion generating a second output signal in response to the first output signal supplied from the first logic circuit when the first output signal supplied from the second logic circuit takes a third logic level, and a fourth circuit portion generating the second output signal in response to the first output signal supplied with the first logic circuit when the first output signal supplied from the second logic circuit takes a fourth logic level.

Abstract: In a particular embodiment, a method includes discharging a first dynamic node at a first discharge circuit of a first dynamic circuit structure in response to receiving an asserted discharge signal. The first dynamic circuit structure includes the first dynamic node at a first voltage level and a first keeper circuit that is disabled when the asserted discharge signal is received. The asserted discharge signal has a second voltage level that is different from the first voltage level. A second keeper circuit of a second dynamic circuit structure is enabled responsive to discharging the first dynamic node to maintain a second dynamic node of the second dynamic circuit structure at the first voltage level.

Abstract: A tunnel transistor is provided comprising a drain, a source and at least a first gate for controlling current between the drain and the source, wherein the first sides of respectively the first and the second gate dielectric material are positioned substantially along and substantially contact respectively the first and the second semiconductor part.

Abstract: This disclosure is directed to a magnetic logic gate for implementing a combinational logic function. The magnetic logic gate may include a write circuit configured to apply a spin-polarized current to the magnetoresistive device such that a resulting programmed magnetization state of the magnetoresistive device corresponds to a logic input value of a combinational logic function implemented by the magnetic logic device. The magnetic logic gate may further include a read circuit configured to generate a logic output value for the combinational logic function based on the programmed magnetization state in response to the write circuit applying the spin-polarized current to the magnetoresistive device.

Abstract: A logic gate has a magnetoresistive element, a magnetization state control unit and an output unit. The magnetoresistive element has a laminated structure having N (N is an integer not smaller than 3) magnetic layers and N?1 nonmagnetic layers that are alternately laminated. A resistance value of the magnetoresistive element varies depending on magnetization states of the N magnetic layers. The magnetization state control unit sets the respective magnetization states of the N magnetic layers depending on N input data. The output unit outputs output data that varies depending on the resistance value of the magnetoresistive element.

Abstract: An inverter circuit includes: first to third transistors; and first and second capacity elements. The first transistor makes/breaks connection between an output terminal and a first voltage line in response to potential difference between an input terminal and the first voltage line or its correspondent. The second transistor makes/breaks connection between a second voltage line and the output terminal in response to potential difference between a gate of the second transistor and the output terminal or its correspondent. The third transistor makes/breaks connection between a gate of the second transistor and a third voltage line in response to potential difference between the input terminal and the third voltage line or its correspondent. The first and second capacity elements are inserted in series between the input terminal and the gate of the second transistor. A junction between the first and second capacity elements is connected to the output terminal.

Abstract: An inverter circuit includes: a first transistor and a second transistor; a first switch and a second switch; and a first capacity element, in which the first and second transistors are connected in series between a first voltage line and a second voltage line, the first and second switches are connected in series between a supply voltage line and a gate of the second transistor, and are alternately turned on and off so as not to be turned on simultaneously, an end of the first capacity element is connected between the first switch and the second switch, and off-state of the first transistor allows a predetermined fixed voltage to be supplied from the supply voltage line to the gate of the second transistor through the first switch, the end of the first capacity element and the second switch.

Abstract: It is an object to provide a logic circuit which can be operated even when unipolar transistors are used. A logic circuit includes a source follower circuit and a logic circuit an input portion of which is connected to an output portion of the source follower circuit and all transistors are unipolar transistors. A potential of a wiring for supplying a low potential connected to the source follower circuit is lower than a potential of a wiring for supplying a low potential connected to the logic circuit which includes unipolar transistors. In this manner, a logic circuit which can be operated even with unipolar depletion transistors can be provided.

Abstract: An inverter circuit includes: first and second transistors connected between first and second voltage lines; a fifth transistor having a drain connected to a fifth voltage line and a source connected to a gate of the second transistor; a first capacitive element between a gate and the source of the fifth transistor; a second capacitive element between a first input terminal and the source of the fifth transistor; and the third capacitive element between a second input terminal and the source of the fifth transistor. A first pulse signal into the first input terminal has a phase advanced more than a second pulse signal into the second input terminal. The second pulse signal is switched while the gate of the fifth transistor and the first voltage line are connected. The first pulse signal is switched while the gate of the fifth transistor and the first voltage line are unconnected.

Abstract: An inverter circuit including: first to third transistors; first and second switches; and a first capacitive element. The first and second transistors are connected in series between a first voltage line and a second voltage line. The third transistor is connected between the second voltage line and a gate of the second transistor. The first and second switches are connected in series between a voltage supply line and a gate of the third transistor, and are turned on/off alternately to prevent the first and second switches from simultaneously turning ON. One end of the first capacitive element is connected to a node between the first and second switches. Off-state of the first transistor allows a predetermined fixed voltage to be supplied from the voltage supply line to the gate of the second transistor, via the first switch, the one end of the first capacitive element and the second switch.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: A standard cell used for the logic synthesis and the routing of layout is configured by a logic circuit on an output side and a logic circuit on an input side, and a driving capacity of the logic circuit on the output side is made large while gate input capacitance of the logic circuit on the input side is made small.

Abstract: Disclosed herein are embodiments of a swing compensation scheme for compensating errors in a transmitter driver.

Abstract: A circuit device includes: a power supply circuit; and a logic circuit, the power supply circuit supplying a first power supply voltage and a second power supply voltage to the logic circuit, the first power supply voltage supplied by the power supply circuit periodically changing with a first reference voltage as a reference voltage, the second power supply voltage supplied by the power supply circuit periodically changing with a second reference voltage as a reference voltage, the power supply circuit supplying, due to resonance, the first power supply voltage and the second power supply voltage that repeat a first period during which a voltage difference between the first power supply voltage and the second power supply voltage is decreasing and a second period during which the voltage difference is increasing, and the logic circuit performing adiabatic circuit operation with the supply of the first and the second power supply voltage.

Abstract: A layout design method in accordance with an exemplary aspect of the present invention is a layout design method for a clock tree circuit, including disposing a first clock distribution circuit in a clock tree circuit, wiring the clock tree circuit in which the first clock distribution circuit is disposed, verifying timing of the wired clock tree circuit, and replacing the first distribution element by a second clock distribution circuit based on a result of the timing verification, the second clock distribution circuit having roughly a same input load capacitance as the first clock distribution circuit and a different delay value from the first clock distribution circuit.

Abstract: Each of a plurality of inverters includes: a first transistor having one end connected to a first terminal; and a second transistor having one end connected to a second terminal and the other end connected to the other end of the first transistor. The first transistors included in the inverters located at either odd-number orders or even-number orders counted from an input terminal side of an inverter chain circuit become conductive when a pre-charge signal has a first state to pre-charge the other end of the first transistors, and become non-conductive when the pre-charge signal has a second state.

Abstract: A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by an insulating dielectric layer, and a second gate separated from the second conduction layer by an insulating layer. These conduction layers may be composed of graphene. The voltages applied to the first and/or second gates can control the peak current and associated voltage value for current flow between top and bottom conduction channels, and interlayer current voltage characteristic exhibiting negative differential resistance. BiSFETs may be used to make a variety of logic gates. A clocked power supply scheme may be used to facilitate BiSFET-based logic.

Abstract: An NAND circuit has a stacked structure having at least one symmetric NFET at a bottom of the stack. More particularly, the circuit has a stacked structure which includes an asymmetric FET and a symmetric FET. The symmetric FET is placed at the bottom of the stacked structure closer to ground than the asymmetric FET.

Abstract: A first current source supplies a tail current It to a plurality of differential pairs. A pre-driver outputs gate signals to the gates of transistors of the corresponding differential pair. A pre-driver is configured to switch the state between the enable state and the disable state. In the enable state, the pre-driver outputs the gate signals that correspond to the differential signals. In the disable state, the pre-driver outputs the gate signals having levels which instruct the transistors of the corresponding differential pair to switch off.

Abstract: Provided is a semiconductor integrated circuit that includes a monitoring circuit for monitoring characteristics of a semiconductor chip. The semiconductor integrated circuit comprises a first terminal with a first voltage and a second terminal with a second voltage. The semiconductor integrated circuit also comprises an inverter chain circuit comprising a plurality of inverters connected in cascade. Each of the plurality of inverters includes a first transistor and a second transistor. The first transistors included in the inverters located at either odd-number orders or even-number orders counted from an input terminal side of an inverter chain circuit function as pre-charge transistors. The pre-charge transistors have a conductivity type different from a conductivity type of the first transistors other then the pre-charge transistors.

Abstract: Disclosed are embodiments of an asynchronous pipeline circuit. In each stage of the circuit, a variable delay line is incorporated into the request signal path. A tap encoder monitors data entering the stage to detect any state changes occurring in specific data bits. Based on the results of this monitoring (i.e., based on which of the specific data bits, if any, exhibit state changes), the tap encoder enables a specific tap in the variable delay line and, thereby, automatically adjusts the delay of a request signal transmitted along the request signal path. Using a variable request signal delay allows data from a transmitting stage to be captured by a receiving stage prior to the expiration of the maximum possible processing time associated with the transmitting stage, thereby minimizing overall processing time.

Abstract: A circuit includes E-mode transistors with gate-source junction, a D-mode transistor with gate-source junction. A component generates a voltage drop between the source of the D-mode transistor and the drain of an E-mode transistor provided as a signal output. A connection is made between this drain of the E-mode transistor and the gate of the D-mode transistor, and a signal input at the gates of the E-mode transistors.

Abstract: A scan driver includes a voltage setting circuit, a counter circuit, a logic circuit, a dynamic decoder, N level shift circuits and N output stage circuits, wherein N is a natural number. The voltage setting circuit sets N voltage signals to a first level. The counter circuit provides count data to the logic circuit, which generates M control signals according to the count data, wherein M is a natural number. The dynamic decoder includes multiple transistors, arranged in N rows, for receiving the respective N voltage signals. The transistors are further arranged in M columns and are controlled by the respective M control signals to determine levels of the N voltage signals. The N level shift circuits lift the levels of the respective N voltage signals, and the N output stage circuits output respective N gate signals based on the N voltage signals whose levels are shifted.

Abstract: In accordance with some embodiments, logical circuits comprising carbon nanotube field effect transistors are disclosed herein.

Abstract: A semiconductor device includes a first transistor included in a latch circuit, a second transistor that is included in the latch circuit and is formed in a well in which the first transistor is formed, the second transistor having a conduction type identical to that of the first transistor, and a well contact that is provided between the first transistor and the second transistor and connects a power supply to the well.

Abstract: A semiconductor device is provided. The semiconductor device includes a first circuit provided between a power source voltage line and a ground line, including at least two first MOS transistors coupled in parallel and a second circuit, which is provided between the power source voltage line and the ground line, including at least two second MOS transistors coupled in series. The gate length and the gate width of the first MOS transistor are adjusted so that the first MOS transistor has a gate area allowing a first characteristic variation of the first MOS transistor to be substantially equal to a second characteristic variation of the second MOS transistor.

Abstract: An inverter device includes at least a first transistor connected between a power source node and ground. The first transistor includes a first gate and a first terminal that are internally capacitive-coupled to control a boost voltage at a boost node. The first terminal is one of a first source and a first drain of the first transistor.

Abstract: An inverter circuit includes: first to third transistors; and first and second capacity elements. The first transistor makes/breaks connection between an output terminal and a first voltage line in response to potential difference between an input terminal and the first voltage line or its correspondent. The second transistor makes/breaks connection between a second voltage line and the output terminal in response to potential difference between a gate of the second transistor and the output terminal or its correspondent. The third transistor makes/breaks connection between a gate of the second transistor and a third voltage line in response to potential difference between the input terminal and the third voltage line or its correspondent. The first and second capacity elements are inserted in series between the input terminal and the gate of the second transistor. A junction between the first and second capacity elements is connected to the output terminal.

Abstract: An inverter circuit includes: a first transistor and a second transistor; a first switch and a second switch; and a first capacity element, in which the first and second transistors are connected in series between a first voltage line and a second voltage line, the first and second switches are connected in series between a supply voltage line and a gate of the second transistor, and are alternately turned on and off so as not to be turned on simultaneously, an end of the first capacity element is connected between the first switch and the second switch, and off-state of the first transistor allows a predetermined fixed voltage to be supplied from the supply voltage line to the gate of the second transistor through the first switch, the end of the first capacity element and the second switch.

Abstract: An inverter circuit includes: first and second transistors connected between first and second voltage lines; a fifth transistor having a drain connected to a fifth voltage line and a source connected to a gate of the second transistor; a first capacitive element between a gate and the source of the fifth transistor; a second capacitive element between a first input terminal and the source of the fifth transistor; and the third capacitive element between a second input terminal and the source of the fifth transistor. A first pulse signal into the first input terminal has a phase advanced more than a second pulse signal into the second input terminal. The second pulse signal is switched while the gate of the fifth transistor and the first voltage line are connected. The first pulse signal is switched while the gate of the fifth transistor and the first voltage line are unconnected.