Abstract: Apparatus and methods are disclosed related to using one or more field effect transistors as a resistor. One such apparatus can include a field effect transistor (FET), averaging resistors and a bidirectional current source. The averaging resistors can apply an average of a voltage at the source of the FET and a voltage at the drain of the FET to the gate of the field effect transistor. The bidirectional current source can turn the FET on and off. The FET can operate in the ohmic region when on. Such an apparatus can improve the linearity of the FET as a resistor, for example, at lower frequencies near or at direct current (DC). In some implementations, the apparatus can include one or more current sources to remove an offset introduced by the bidirectional current source at the source and/or the drain of the FET.

Abstract: A circuit for selectively providing a signal from a source to a sink is provided. The circuit includes a field effect transistor having a conducting state and a non-conducting state, the field effect transistor having a gate, a source, and a drain. The circuit also includes a first comparator configured to provide a first output based on a difference between a source voltage at the source of the field effect transistor and a first reference voltage. Finally, the circuit includes a switching amplifier configured to apply a first gate voltage to the gate of the field effect transistor as a function of the first output of the first comparator.

Abstract: A current-source circuit includes a plurality of input-side transistors; a plurality of output-side transistors current-mirror-coupled to the plurality of input-side transistors; an output terminal from which an output current is output; and a switching control circuit to switch the plurality of input-side transistors and activate at least one of the plurality of input-side transistors sequentially.

Abstract: A switch control circuit has a first terminal, a second terminal, a third terminal, a serial-parallel converter, a selector, a driver circuit and a tri-state buffer. The serial-parallel converter converts a serial switching control signal inputted from the third terminal into first parallel switching control signals when the first terminal is at a first power-supply potential. The selector selects either the first parallel switching control signals converted by the serial-parallel converter or second parallel switching control signals inputted into the second and third terminals, depending on the potential of the first terminal. The driver circuit converts potential levels of the first parallel switching control signals or the second parallel switching control signals selected by the selector and generates parallel switching control signals with potential levels capable of switching a switch circuit.

Abstract: A multiplexer is provided. The multiplexer includes an output coupled to a complementary driving unit and a plurality of switch circuits. Each switch circuit includes a channel unit and two switches. The two switches respectively conduct two input signals to a channel end of the channel unit during different switch conduction periods, and the channel unit conducts the channel end to an output end during a channel conduction period. The switch conduction period of the first switch in the first switch circuit equals the switch conduction period of the second switch circuit, the switch conduction period of the second switch in the second switch circuit equals the switch conduction period of the first switch circuit, and the first and second switches are coupled to the same input signal.

Abstract: An output driver circuit includes first, second, third, and fourth transistors having a common current path, wherein a gate of the first transistor receives a first switching signal, a gate of the second transistor receives a first reference voltage, a gate of the third transistor receives a second reference voltage, and a gate of the fourth transistor receives a second switching signal, and wherein a first capacitor is coupled between the gate of the first transistor and the gate of the third transistor, a second capacitor is coupled between the gate of the second transistor and the gate of the fourth transistor, and an output signal is provided at a node coupling the second and third transistors.

Abstract: One configuration of the present disclosure is directed to a switch driver circuit. The switch driver circuit can include an input to receive a control signal; an output to control a state of an switch in accordance with the control signal; and a set of parallel switches. The set of parallel switches in the switch driver circuit includes a P-type field effect transistor in parallel with an N-type field effect transistor. During operation, via variations in the control signal, the control signal selectively and electrically couples a voltage source signal to the output of the switch driver circuit to control the state of the switch.

Abstract: A system includes a voltage pump to generate a first pump voltage from an analog voltage signal. The system further includes switching pad to receive an analog signal from an external source and route the analog signal to analog processing circuitry over one or more analog signal busses based on the first pump voltage and the analog voltage signal.

Abstract: Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.

Abstract: A current mirror circuit exhibits improved current matching by applying a switching signal to ground path switches in series with transistors in both a reference path and an output path of the current mirror. The switching signal may comprise a high-frequency signal, which may be phase modulated. A plurality of matched, parallel-connected output transistors may be selectively enabled by qualifying the switching signal applied to each corresponding series-connected ground path switches by decoded digital modulation data. In one embodiment, the modulation data is decoded to thermometer-coded representation. In one embodiment, the switching signal path is identical to the reference and output circuits.

Abstract: Power switching circuits and power management techniques are provided that can reduce static power of ICs, including digital core processors. In one embodiment, the power switching circuit includes a footer (power-gating transistor) between the core and a ground rail and at least two additional power-gating transistors parallel to the footer. The power-gating transistors are controlled by respective control signals to enable selective switching. In a specific embodiment, for each sleep mode, at most, a single one of the transistors is turned on. Multiple sleep modes are accomplished according to the relative sizing of the additional power-gating transistors. A larger of the additional transistors is used to provide a standby mode during short idling times by providing a fast wake-up time and some reduction in static power. For standby modes during longer idling periods, smaller sized transistors are turned on. For longest idling periods, all transistors are turned off.

Abstract: A body control apparatus for an analog switch for minimizing leakage current and keeping PN junctions reverse-biased. The analog switch has first and second switch device clusters coupled between input and output nodes and controlled by a control input, each having a corresponding body junction. The body control apparatus includes body control devices each controlled by one of the input and output nodes for coupling a body junction to the opposite one of the input and output nodes. Each switch device cluster may include a main switch and body devices which keep the body junction of the main switch at a voltage level between the input and output nodes when the analog switch is on. When the analog switch is off, the body control apparatus activates when voltage across the input and output nodes rises to keep the body junctions at desired voltage levels.

Abstract: A connection apparatus for controlling the supply of electrical power to a load, the connection apparatus comprising first and second electrically controllable devices connected in parallel to each other and in series with the load; wherein the first and second electrically controllable devices are dissimilar, and where a safe operating area product of voltage, current and safe operating area time for the first device is greater than the product of voltage, current and the same safe operating area time for the second device, and an on state resistance for the second device is less than an on state resistance for the first device, and where a controller is provided to use the first device for a first period of time to power up the load, and thereafter the second device is used to maintain power to the load.

Abstract: There is provided a communication device including: a first node connected to an antenna; a transmission unit outputting a signal to the antenna via the first node; a reception unit having a signal input thereto from the antenna via the first node; a first switch provided between the first node and the transmission unit; and a second switch provided between the first node and the reception unit, and in which the second switch is alternately turned on and off repeatedly, and the reception unit includes an amplifier amplifying a signal that the transmission unit outputs via the first and second switches and a mixer mixing a signal amplified in the amplifier and a local signal.

Abstract: A pump circuit includes a plurality of clock control circuits configured to transfer a clock to respective output terminals in response to respective pump-off signals or block the clock from being transferred to the respective output terminals, a plurality of charge pumps configured to generate respective high voltages by performing respective pumping operations in response to respective clock signals of the output terminals, and a plurality of switching circuits configured to transfer the respective high voltages to a final output terminal in response to respective control signals.

Abstract: A system includes a voltage pump to generate a first pump voltage from an analog voltage signal. The system further includes switching pad to receive an analog signal from an external source and route the analog signal to analog processing circuitry over one or more analog signal busses based on the first pump voltage and the analog voltage signal.

Abstract: A semiconductor device includes an inverter having an NMOSFET and a PMOSFET having sources, drains and gate electrodes respectively, the drains being connected to each other and the gate electrodes being connected to each other, and a pnp bipolar transistor including a collector (C), a base (B) and an emitter (E), the base (B) receiving an output of the inverter.

Abstract: An integrated circuit includes a pull-up compensation path unit configured to adjust a pull-up driving power of an input signal; a pull-down compensation path unit configured to adjust a pull-down driving power of the input signal; and a path control unit configured to route the input signal to one of the pull-up compensation unit and the pull-down compensation unit in response to a conditional signal.

Abstract: A data output circuit in a semiconductor memory apparatus includes a pre-driver configured to receive input data and then produce a pull-up signal and a pull-down signal, a pull-up driver configured to pull-up drive a first node in response to the pull-up signal and provide an additional pull-up drive when a voltage level on the first node transitions, a pull-down driver configured to pull-down drive a second node in response to the pull-down signal and provide an additional pull-down drive when a voltage level on the second node transitions, and a pad coupled to the first and second nodes to generate output data.

Abstract: A gate driver circuit arranged to supply a DC/DC converter with a switching voltage. Both the gate driver circuit and the DC/DC converter include at least one transistor and at least one further component. The DC/DC converter is arranged to convert an input voltage to an output voltage and to supply to a load. A power converter includes the gate driver circuit and the DC/DC converter. The gate driver circuit can be designed such that the transistors are in the form of transistors being suitable for being manufactured in an MMIC-process or an RFIC-process.

Abstract: A transmission gate includes first and second MOS transistors of opposite conductivity type coupled in parallel with each other. Each transistor includes a body connection that is separately biased by corresponding first and second biasing circuits. The first biasing circuit generates a first bias voltage having a voltage level that is generated as a function of the signal at the first node and a first (for example, positive) reference voltage. The second biasing circuit generates a second bias voltage having a voltage level that is generated as a function of the signal at the first node and a second (for examples ground) reference voltage.

Abstract: A high voltage analog switch operable by a binary signal is implemented in a low voltage semiconductor process. The switch has three parallel circuit paths, with each path comprising at least three series connected transistors. Control signals are selectively applied to the control terminals of the transistors to control the switch and selectively turn on or turn off each of the three circuit paths depending on the input voltage range, so that the breakdown voltage of all of the transistors is never exceeded in any mode of operation.

Abstract: CMOS circuitry having mixed threshold voltages is disclosed. Circuits may be implemented using PMOS transistors, NMOS transistors, or both. For at least one given type of transistor (PMOS or NMOS), a circuit includes at least one transistor configured to switch at a first nominal threshold voltage and at least one transistor configured to switch at a second nominal threshold voltage. The different threshold voltages among a given transistor type are realized by varying the thickness of the transistor gate oxides and/or the channel dopant density, for example.

Abstract: An isolation circuit is provided. The isolation circuit is coupled to an output and an input node and includes a first set, a second switch set, and a body bias voltage generator. The first switch set couples a switch control node to a second voltage when a first voltage is at a first voltage level, and couples the switch control node to the input node when the first voltage is at a second voltage level. The second switch set couples the output node to the input node when the first voltage is at the first voltage level, and isolates the output node from the input node when the first voltage is at the second voltage level. The body bias voltage generator selectively provides a higher one of the first voltage and a voltage on the input node to a body of the second switch set.

Abstract: The invention concerns a method for controlling a switching assembly comprising a plurality of transistors connected in parallel, having a linear operating mode, a closed-switch operating mode and an off operating mode including a first operating phase during which a current flows from a source terminal to a drain terminal and a second operating phase during which no current flows. The method includes the following successive steps; (a) controlling the switching assembly in closed-switch mode during part of the first phase; (b) controlling the switching assembly in linear mode; (c) controlling the assembly in off mode during part of the second phase.

Abstract: Noise-reducing transistor arrangement having first and second field effect transistors (FETs) having source terminals coupled together, drain terminals coupled together, and control terminals for application of a first or second signal. A clock generator unit is configured to provide the first and second signals alternately to the FETs with an alternating frequency which is at least as great as the cut-off frequency of the noise characteristic of the FETs, or with a reciprocal alternating frequency which is less than a mean lifetime of an occupation state of a defect in the boundary region between channel region and gate insulating layer of the FETs. The first signal is applied to the control terminal of the first FET and, simultaneously, the second signal to the control terminal of the second FET. The second signal is applied to the control terminal of the first FET and, simultaneously, the first signal to the control terminal of the second FET.

Abstract: An integrated analog switch including first and second semiconductor devices and a current mirror. The first device is a switching device having first and second current terminals coupled between first and second switch terminals. When turned off, the body of the first device is pulled to a bias voltage, and a first leakage current flows between its body and the first switch terminal. The second device is a reduced-size replica of the first device having one current terminal coupled to the first switch terminal and having its body pulled to about the bias voltage when turned off. The second device provides a second leakage current which is proportional to the leakage current of the first device. The current mirror circuit mirrors and amplifies the second leakage current to provide a cancellation current which is applied to the first switch terminal to cancel leakage current.

Abstract: A switch circuit, which selectively couples first and second switch nodes together and which enables the first and second switch nodes to operate in an extended voltage range, includes a secondary voltage rail, a switch device, a body driver, a rail control switch, and a switch control circuit. The rail control switch clamps the secondary voltage rail to a primary voltage rail during normal voltage range operation, but otherwise releases the secondary voltage rail to float. The body driver clamps the body of the switch to the secondary voltage rail when turned on, and when turned off, forward biases to allow voltage of said secondary voltage rail to follow voltage of the switch nodes into the extended voltage range through the switch. The switch control circuit includes a latch circuit which ensures that the switch remains either turned on or turned off during extended voltage operation.

Abstract: A semiconductor device includes a pad, an internal power supply line, a pad switch including a MOS transistor to provide an electrically connectable coupling between the internal power supply line and the pad by use of a source-drain channel thereof, and a control circuit configured to control an electrical connection with respect to at least one of a gate node and a back-gate node of the MOS transistor, wherein the control circuit is configured such that at least one of the gate node and the back-gate node is electrically connectable to the pad.

Abstract: An analog multiplexer with an insulated power supply includes: an analog signal transformer receiving an analog signal input in its primary winding via an FET, and ON/OFF driving the FET to generate a pulse with an amplitude of the analog signal in its secondary winding; a drive transformer receiving a drive pulse input in its primary winding via an FET to generate a pulse turning ON/OFF the FET in its secondary winding; an inhibit generation circuit generating an inhibit pulse having a wider pulse width than that of the drive pulse; an AND gate determining a logical product of a continuous pulse from a continuous pulse generation circuit and the inhibit pulse to obtain a power supply pulse train; and a rectifying/smoothing circuit obtaining a direct current voltage corresponding to the power supply pulse train to apply the direct current voltage to the primary winding of the transformer through high resistance.

Abstract: A bus switch with level shifting may include a first terminal configured to receive and output a first power supply voltage higher than a reference voltage, a second terminal configured to receive and output a second power supply voltage higher than the first power supply voltage, an output control terminal to which a control signal for controlling a switching between an output permitted state and an output prohibited state is inputted, a first switching element provided between the first terminal and the second terminal and having a gate, a gate control circuit to which signals are inputted from the output control terminal and the second terminal, which supplies gate voltage to the gate of the first switching element, and which controls the first switching element to be conducting or to be non-conducting, and a second switching device provided between a power source of the second power supply voltage and the second terminal, and configured to switch between conducting and non-conducting in accordance with th

Abstract: In a SPDT switch, a resistor for leak path is connected between a terminal for antenna and a reference potential. The resistor for leak path allows charge capacitances accumulated in electrostatic capacitor elements provided as DC cut capacitors connected to transmission signal terminals and reception signal terminals to be discharged and allows rapid lowering of a potential at the terminal for antenna. In the SPDT switch, a switching characteristic is improved and a delay in the rising edge of a low-power slot which comes after a high-power slot is reduced.

Abstract: Switching characteristics in an SPDT switch are improved to reduce the rise delay in a low power slot following after a high power slot. Control terminals of an SPDT switch are respectively provided with backflow prevention circuits. The backflow prevention circuit is configured to have two transistors and a diode. In a transmission mode, for example, when a time slot where a high power passes through transistors is followed by a time slot where a low power passes through, the electric charges accumulated in the gates of the transistors are blocked. In the case where the transistors are in the OFF state, the electric charges accumulated in the gates of the transistors are immediately discharged to allow the transistors to be completely turned OFF.

Abstract: Since parallel MOSFETs are usually driven with one gate signal in power applications, the current sharing between the MOSFETs is automatically established with regard to the characteristics of the individual MOSFETs. This may lead to a large non-uniformity of the current distribution between the MOSFETs. According to the present invention, an individual control of the on-resistances of the MOSFETs is provided, which allows for an improved current sharing between paralleled MOSFETs.

Abstract: An electronically scannable multiplexing device is capable of addressing multiple bits within a volatile or non-volatile memory cell. The multiplexing device generates an electronically scannable conducting channel with two oppositely formed depletion regions. The depletion width of each depletion region is controlled by a voltage applied to a respective control gate at each end of the multiplexing device. The present multi-bit addressing technique allows, for example, 10 to 100 bits of data to be accessed or addressed at a single node. The present invention can also be used to build a programmable nanoscale logic array or for randomly accessing a nanoscale sensor array.

Abstract: According to one exemplary embodiment, a low harmonic switching device includes a first switching block including a first multi-gate FET, where the first switching block is coupled to a first input and a shared output of the low harmonic switching device. A first capacitor is coupled between a first gate and a source of the first multi-gate FET and a second capacitor is coupled between a second gate and a drain of the first multi-gate FET so as to cause a reduction in a harmonic amplitude in the shared output. A resistor can couple the source to the drain of the first multi-gate FET. The first switching block can further include a second multi-gate FET, where a source of the second multi-gate FET is coupled to the drain of the first multi-gate FET and a drain of the second multi-gate FET is coupled to the shared output.

Abstract: A switching device for bi-directionally equalizing charge between energy accumulators, particularly between capacitive energy accumulators in a motor vehicle electric system, includes: an integrated starter generator; a first connection coupled to the integrated starter generator; a second connection coupled to an energy source; a controllable transfer gate having a first load current-conducting path connected between the first and second connection, and a controllable switching controller having a second load current-conducting path connected between the first and second connection in parallel to the first load current-conducting path. There is also provided a motor vehicle electric system with such a switching device, and the implementation and use of a switching controller in a transfer gate for such a switching device.

Abstract: A single pole single throw switch for controlling propagation of a high frequency signal between an input terminal (11a) and an output terminal (11b). First FET switches (14a, 14b) in which drains and sources of FETs (12a, 12b) are connected in parallel with inductors (13a, 13b) are connected in parallel. Each FET (12a, 12b) is switched between on state and off state by a voltage being applied to the gate thereof. At the frequency of the high frequency signal, each inductor (13a, 13b) connected with off capacitor of each FET (12a, 12b) resonates in parallel.

Abstract: A mixer for use in a transceiver comprises an LO switching pair and a folded transconductor. The mixer can be used as an upconversion or down conversion mixer and provides increased headroom and linearity, while still reducing current consumption. The mixer can be configured for differential inputs and outputs and the folded transconductor can comprises a MOSFET differential pair.

Abstract: A method and apparatus are provided for detecting and transmitting geophysical data from a plurality of electrodes inserted into the soil utilizing a set of identical dynamically reconfigurable voltage control units located on each electrode and connected together by a communications and power cable. A test sequence is provided in each voltage control unit. Each voltage control unit records data measurements for transmission to a central data collector. Each voltage control unit incorporates and determines its positional relationship to other voltage control units by logging when the unit is attached to the electrode. Each voltage control unit I equipped with a magnetic switch for detecting when they are in contact with the electrode.

Abstract: The invention proposes noise suppression circuits that are assembled together with capacitors on a CPU package. Charge is conveyed from the capacitors dedicated to the active noise suppression function through electrical circuit pathways such as controlled electronic switches integrated into a semiconductor substrate. These circuit pathways connect to the capacitor terminals through the package of the active noise suppression semiconductor chip. The circuits within the active device may be any combination of semiconductor switches and/or voltage regulators, and may also contain voltage and current sensing circuitry. The charge transfer switches are designed with control circuitry that dynamically modulate the turn-on threshold voltage of the switches and maintain the switches at an operating point very close to actual turn-on. These enhancements ensure very fast turn-on action for the switches improving voltage droop suppression capability.

Abstract: A circuit apparatus having compensation circuits for unequal input/output common mode voltages is presented. The apparatus includes a circuit unit, a feedback path and a current source. The circuit unit has at least an input terminal for receiving an input signal and at least an output terminal for generating an output signal. The input terminal configured to provide an input common mode voltage and the output terminal configured to provide an output common mode voltage. The feedback path couples the output terminal and the input terminal. The current source is coupled to the input terminal to supply a current. The voltage drop generated at the feedback path compensates the difference between the input common mode voltage and the output common mode voltage.

Abstract: Some embodiments include an output driver having a first circuit to provide a plurality of first parallel circuit paths between an output node and a first supply node, a second circuit to provide a plurality of second parallel circuit paths between the output node and a second supply node, and a control circuit responsive to a voltage at the output node to vary a value of a current in the plurality of first parallel circuit paths and a value of a second current in the plurality of second parallel circuit paths to control a signal shape of the output signal. Additional apparatus, systems, and methods are disclosed.

Abstract: There are various mobile communication standards such as GSM, EDGE, and W-CDMA. For a GSM or EDGE system, a receiver must be configured to work with an IF signal with a center frequency and bandwidth of 200 KHz. For WCDMA system, the same receiver must be configured to work with an IF signal with a center frequency of 600 KHz to 1000 KHz and band width of 2000 KHz. Accordingly, a configurable frequency IF filter with the capability to operate with multiple standards is provided.

Abstract: A self-repairable semiconductor comprises a first device and a replacement device. A switching device selectively swaps the replacement device for the first device when the first device is non-operable. The switching device includes an analog switching circuit that selects one of a first pair of differential outputs of the first device having a first common mode voltage and a second pair of differential outputs of the replacement device having a second common mode voltage. The analog switching circuit includes first and second switches having one of a source and drain that communicate with the first pair of differential outputs. Third and fourth switches have one of a source and drain that communicate with the second pair of differential outputs. An amplifier has a first input that communicates with the other of the source and drain of the first and third switches and a second input that communicates with the other of the source and drain of the second and fourth switches.

Abstract: A high-speed front-multiplexed multi-channel LVDS-compatible repeater circuit that limits input leakage current levels in the event one or more input voltages of the circuit exceeds the supply voltage. The LVDS repeater includes a multiplexor having a plurality of differential inputs and at least one differential output. The multiplexor includes a plurality of transmission gates to allow any one of the differential inputs to be routed to any differential output. Each transmission gate includes a first PMOS transistor and an NMOS transistor. The multiplexor further includes first Schottky diodes coupled between Vcc and the back-gate nodes of the first PMOS transistors, and second PMOS transistors coupled as shunts between the gate nodes of the first PMOS transistors and the source nodes of the NMOS transistors.

Abstract: An integrated driver with improved load current sense capability includes a first transistor, a first amplifier, a second transistor, a third transistor, a second amplifier and a fourth transistor. The integrated driver allows for significantly better fault handling capability, provides accurate thermal and current sensing capability and reduces I/O pin count over prior designs.

Abstract: A circuit (S1) for switching on an electrical load which can be connected downstream from the circuit comprises a first electronic switching means (T1) in a first path, and a second electronic switching means (T2) in a second path, which is in parallel with it. The circuit also has a means (INV, OR, T5) for producing the electrical control variable (Ugate2) for the second switching means (T2), which determines the control variable (Ugate2) as a function of an electrical variable (U0,d) which occurs on the output side of the first switching means (T1) when switching on a load which can be connected downstream.

Abstract: A synchronous rectifier comprising a MOSFET device, and a gate driver for driving the gate of the MOSFET device, the MOSFET device comprising first and second MOSFET transistors coupled with their drain-source paths in parallel to receive an alternating current waveform for rectification by the drain-source paths of the MOSFET transistors, the first transistor having a low Rdson and the second transistor having a high Rdson whereby the apparent Rdson of the MOSFET device is increased when the current through the MOSFET device is below a threshold thereby enabling zero crossing detection.

Abstract: Provided is concerned with a high voltage switch circuit for a semiconductor device, which rapidly discharges a gate voltage of a pass transistor through an additional discharge transistor during inactivation of itself in the circuit structure with a positive feedback loop for transferring an internal high voltage without a voltage drop by applying an enough voltage to the gate of the pass transistor. The high voltage switch circuit prevents the internal high voltage from decreasing.