Abstract: An image capturing apparatus includes a plurality of pixels arranged on a substrate, a temperature signal output unit arranged on the substrate and configured to output a temperature signal representing a temperature, and a reference signal output unit arranged on the substrate and configured to output a reference signal used to correct the temperature signal. The temperature signal output unit and the reference signal output unit are arranged in regions different from each other on the substrate.

Abstract: An example dynamic element matching (DEM) circuit includes: a plurality of bipolar junction transistors (BJTs), each of the plurality of BJTs having a base terminal and a collector terminal coupled to electrical ground; a plurality of pairs of force switches, each pair of force switches coupled to an emitter of a respective one of the plurality of BJTs; a plurality of pairs of sense switches, where each pair of sense switches is coupled to the emitter of a respective one of the plurality of BJTs, a first switch in each pair of sense switches is coupled to a first node, and a second switch in each pair of sense switches is coupled to a second node; a first current source coupled to a first switch in each pair of force switches; and a second current source coupled to a second switch in each pair of force switches.

Abstract: To provide an infrared temperature sensor that is corrected in detected temperature while ensuring high responsiveness. An infrared temperature sensor 10 according to the present invention includes a heat conversion film 40, an infrared detection element 43 held by the heat conversion film 40, a temperature compensation element 45 that is provided adjacently to the infrared detection element 43 and is held by the heat conversion film 40, a light guide part 59 that guides entered infrared rays toward the infrared detection element 43, and a blocking part 27 that blocks the infrared rays from being incident on the temperature compensation element 45, in which an inner surface of the light guide part 59 configures an irradiation surface 57 to be irradiated with the infrared rays, and the irradiation surface 57 includes a correction region 58 that is different in emissivity of the infrared rays from surroundings.

Abstract: A driver circuit includes a temperature sensor generating a first voltage representative of current operating temperature. An amplifier compares the first voltage to a second voltage representative of an upper threshold operating temperature, and generates a control signal based thereupon. A variable current source generates a load current from the control signal. The amplifier generates the control signal to cause the variable current source to generate the load current as having a magnitude equal to an upper threshold when the first voltage is less than the second voltage. The amplifier generates the control signal to cause the variable current source to generate the load current as having a magnitude that is decreasing until the first and second voltages are equal, and then generates the control signal to cause the variable current source to maintain the load current magnitude at a level at which the first and second voltages are equal.

Abstract: First and second circuits, a photocoupler and a substrate temperature monitor circuit are formed on a substrate. A photocoupler includes a primary-side light emitting diode that converts an electric signal received from the first circuit into an optical signal, and a light receiving device that converts the optical signal into an electric signal and outputs the electric signal to the second circuit. The substrate temperature monitor circuit reads a Vf voltage value of the primary-side light emitting diode of the photocoupler to monitor temperature of the substrate.

Abstract: The disclosure provides a circuit that includes an analog control block, and a plurality of temperature sensors coupled to the analog control block. At least one temperature sensor of the plurality of temperature sensors includes a first transistor coupled to a first current source. A second transistor is coupled to a second current source and to the first transistor. The analog control block measures a local temperature from a first potential generated across the first transistor and from a second potential generated across the second transistor.

Abstract: An integrated circuit and method are provided for accurately measuring the temperature of a die of the integrated circuit. Pairs of diodes are driven with different currents in order to generate a series of thermal voltages. The ADC measures the series of thermal voltages against an external reference voltage. Based on these thermal voltage measurements, the ADC calculates the die temperature. The different currents used to generate the series of thermal voltages are selected at specific ratios to each other in order to promote the ability of the ability of the ADC to calculate the die temperature using standard components and logic of an ADC. These thermal voltages are generated and measured using integrated components of the die for which a temperature measurement is being provided, thus reducing several sources of inaccuracies in conventional die temperature measurement techniques. Addition embodiments are provided for detecting defective diodes based on comparisons of the thermal voltage outputs.

Abstract: In one embodiment, a processor comprises: a first die including at least one core and at least one first die thermal sensor; a second die including at least one memory and at least one second die thermal sensor; and a thermal controller to receive first thermal data from the at least one first die thermal sensor and second thermal data from the at least one second die thermal sensor, calculate a first thermal margin for the first die based at least in part on the first thermal data and a first thermal loadline for the first die and calculate a second thermal margin for the second die based at least in part on the second thermal data and a second thermal loadline for the second die. Other embodiments are described and claimed.

Abstract: A voltage regulator includes a power stage configured to produce an output voltage from an input voltage at an input voltage terminal, a shunt resistor connected in series between the input voltage terminal and the power stage, a first level shifting resistor connected in series between a first terminal of the shunt resistor and a first sense pin of the controller, and a second level shifting resistor connected in series between a second terminal of the shunt resistor and a second sense pin of the controller. The input current of the regulator is sensed as a function of the voltage across the shunt resistor, as shifted down by the level shifting resistors and measured across the sense pins. The input voltage of the regulator is sensed as a function of the current flowing through either one of the level shifting resistors, as measured at one of the sense pins.

Abstract: A reference voltage generator circuit includes a circuit that generates a complementary to absolute temperature (CTAT) voltage and a proportional to absolute temperature (PTAT) current. An output current circuit generates, from the PTAT current, a sink PTAT current sunk from a first node and a source PTAT current sourced to a second node, wherein the sink and source PTAT currents are equal. A resistor is directly connected between the first node and the second node. A divider circuit divides the CTAT voltage to generate a divided CTAT voltage applied to the first node. A voltage at the second node is a fractional bandgap reference voltage equal to a sum of the divided CTAT voltage and a voltage drop across the resistor that is proportional to a resistor current equal to the sink and source PTAT currents.

Abstract: A temperature detecting circuit is provided. The temperature detecting circuit includes a band gap voltage generating circuit and an offset adjusting circuit. The band gap voltage generating circuit generates a reference voltage according to a bias voltage. The band gap voltage generating circuit has a voltage dividing circuit, and the voltage dividing circuit divides the reference voltage to generate a plurality of output voltages. The offset adjusting circuit includes a current source and a resistor string. The current source provides a reference current. The resistor string receives the reference current and generates a plurality of adjusted output voltage accordingly. At least one of a current value of the reference current and a resistance of each of the resistor units is provided to be adjusted to force a voltage on an output terminal of the current source to be substantially equal to one of the reference voltage and the output voltages.

Abstract: A payment reader includes an anti-tamper circuit for comparing a voltage measured from a temperature sensing circuit with a voltage from one or more threshold nodes. A voltage of a measurement node of the temperature sensing circuit and of each threshold node may correspond to a temperature. A temperature comparison circuit may determine whether a pre-determined temperature threshold has been breached on a comparison of a voltage of the measurement node of the temperature sensing circuit with voltages corresponding to the one or more temperature thresholds. A tamper attempt may be detected if the voltage measured from the temperature sensing circuit exceeds a high voltage threshold or falls below a low voltage threshold. The temperature comparison circuit may provide an output to anti-tamper circuit indicating a result of the comparison.

Abstract: An active bias circuit for a power amplifier and a mobile terminal are disclosed. The circuit includes a proportional to absolute temperature (PTAT) current source circuit, a reference voltage circuit, an isolation voltage stabilizing circuit, and a bias voltage circuit. An input end of the PTAT current source circuit is connected to a voltage source (Vbat), and an output end is connected to the reference voltage circuit. The reference voltage circuit generates a reference voltage that is in proportion to a current and a temperature. The isolation voltage stabilizing circuit isolates the reference voltage circuit from the bias voltage circuit, and supplies a stabilized voltage to the bias voltage circuit by using a negative feedback loop. The bias voltage circuit receives the voltage of the isolation voltage stabilizing circuit, and is also connected to the voltage source (Vbat).

Abstract: An electronic device is provided. The electronic device may include a sensor module including sensing circuitry configured to sense a temperature of at least part of the electronic device and a processor electrically connected with the sensor module. The processor is configured to perform a function using a first output device operatively connected with the electronic device, to determine a temperature of the electronic device using the sensor module, while the function is executed, and to perform at least part of the function using a second output device operatively connected with the electronic device, if the temperature is within a predetermined temperature range.

Abstract: In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.

Abstract: A multi-chip package includes a first die having temperature sensors and a second die. The first die generates temperature deviation information of m (m<n) bits based on temperature information of n bits produced by the temperature sensors. The first die provides the temperature deviation information of m bits rather than the temperature information of n bits to the second die. An internal operation of the second die is controlled using the temperature deviation information output by the first die.

Abstract: Methods, systems, and apparatuses relating to package on package memory refresh and self-refresh rate management are described. In one embodiment, an apparatus includes a processor die, a dynamic memory die mounted to and overlapping the processor die, a first thermal sensor of the processor die disposed adjacent to a first hot spot from a first type of workload and a second thermal sensor of the processor die disposed adjacent to a second hot spot from a second type of workload, and a hardware control circuit of the processor die to cause a refresh of a capacitor of the dynamic memory die when either of an output of the first thermal sensor exceeds a first threshold value and an output of the second thermal sensor exceeds a second threshold value.

Abstract: An on-die temperature sensor measures temperature during a temperature-measurement session. A PTAT (proportional-to-absolute-temperature) generator generates an analog PTAT voltage that is dependent on temperature. A ramp generator generates a changing, analog ramp voltage whose rate of change is dependent on the PTAT voltage, such that the rate of change of the ramp voltage is dependent on the temperature. A comparator compares the ramp voltage to a reference voltage to detect termination of the temperature-measurement session. A counter generates a count value based on the duration of the temperature-measurement session, where the count value is mapped to the measured temperature using a lookup table. The PTAT generator has (i) two npn-type bipolar devices that generate a base-to-emitter voltage difference that is dependent on temperature and function as an amplifier input stage and (ii) circuitry to generate base currents for the bipolar devices to avoid current loading at the PTAT output.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a delay code determining unit configured to output a final delay trim code reflecting process, voltage and temperature (PVT) conditions of the semiconductor memory device, using an internal clock generated for a reference time and a delay circuit configured to reflect a delay of a data line on a clock signal in response to the final delay trim code.

Abstract: A system-on-chip (SOC) includes a compensation circuit that compensates for PVT variations of the SoC and an external memory connected to the SOC. The compensation circuit includes first through third delay calculators, first through third delay circuits, first through third latches, first and second comparators, and a delay control circuit. The delay calculators generate first through third delay count data. The delay circuits use three delay counts to generate first through third clock signals. The latches receive data stored in the external memory, and output start-point, mid-point, and end-point data, respectively. The first and second comparators generate increment or decrement signals based on the start-point, mid-point and end-point data comparisons. The delay control circuit generates modified first delay count data, which along with the first through third delay count data, compensate for the PVT variations of the SoC and the external memory.

Abstract: A semiconductor device may be provided. The semiconductor device may include a reference voltage generation circuit suitable for controlling a level of a reference voltage depending on an internal resistance value, and controlling the level of the reference voltage depending on the internal resistance value.

Abstract: Circuitry for soft shutdown of a power switch and a power converters that includes circuitry for soft shutdown are described. In one aspect, circuitry for soft shutdown of a power switch includes a sense input to be coupled to a power switch receive a signal representative of current passing through the power switch, a comparator to compare the signal with an overcurrent threshold indicative of an overcurrent condition of the power switch and to output a triggering signal in response to the comparison indicating the overcurrent condition, and a gating transistor to be coupled to a control terminal of the power switch, the gating transistor configured to divert a portion of a drive signal away from the control terminal of the power switch in response to the triggering signal.

Abstract: A temperature control device for controlling a temperature of a semiconductor device including a first chip and a second chip. The temperature control device may be configured to generate a correction temperature based on internal temperatures of the semiconductor device.

Abstract: A temperature sensor is disclosed. In one aspect, the temperature sensor provides a digital output having a precise degree/code step. For example, each step in the digital output code may correspond to one degree Celsius. In one aspect, a temperature sensor comprises a precision band-gap circuit and a sigma delta modulator (SDM) analog-to-digital convertor (ADC). A bandgap voltage and a PTAT voltage may be provided from the band-gap circuit as an input to the SDM ADC. The SDM ADC may produce an output based on the difference between the PTAT voltage and the bandgap voltage. The temperature sensor may also have logic that outputs a temperature code based on the output of the SDM ADC.

Abstract: A temperature sensor having calibration function according to temperature, a method of operating the same, and a device including the same are provided. The temperature sensor includes a reference circuit configured to generate at least one temperature information signal that varies according to a temperature, and generate at least one reference signal that is substantially constant relative to the temperature; and a digital temperature generator configured to receive the at least one temperature information signal and the at least one reference signal generated by the reference circuit, and generate a digital temperature information signal indicative of the temperature based on the at least one temperature information signal and the at least one reference signal, wherein one of the reference circuit and the digital temperature generator is configured to receive a calibration signal and adjust the at least one reference signal based on the calibration signal.

Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.

Abstract: A device for over-temperature detection having a test mode is presented. The device includes a temperature detection circuit having first and second transistors. The temperature detection circuit is configured so that when an ambient temperature of the temperature detection circuit is less than a temperature threshold, a voltage at an emitter terminal of the second transistor is less than a voltage at an emitter terminal of the first transistor minus VT*In(N), and when the ambient temperature of the temperature detection circuit is greater than the temperature threshold, the voltage at the emitter terminal of the second transistor is greater than a voltage at the emitter terminal of the first transistor minus VT*In(N). The device includes a measurement circuit configured to generate an output voltage that is proportional to a difference between the temperature threshold of the temperature detection circuit and the ambient temperature of the temperature detection circuit.

Abstract: A multi-die sensor system comprises a package and one or more transducer dies mounted in the package. Each transducer die includes one or more transducers, a temperature control element, and temperature sensor. The temperature control element changes the temperature of at least a portion of the transducer during operation of the temperature control element. A temperature sensor senses the temperature of at least the portion of the transducer. An output circuitry die mounted in the package receives transducer signals and a sensed temperature signal from the temperature sensor.

Abstract: An audio signal that is output from a sound source circuit (14) is caused to flow through a coil (16) in a transducer for vibrating a soundboard, and the vibration of the soundboard generates an acoustic signal. A microcomputer (30) calculates a temperature of the coil (16) with high accuracy by inputting an ambient temperature (Ta) detected by an ambient temperature sensor (21) and a voltage (V) applied to the coil (16) and executing computation based on a thermal equivalent circuit of an acoustic signal converter using the ambient temperature and the voltage that are input thereto, the computation including calculation of an amount of electric power consumed in the coil (16) using the input voltage.

Abstract: A power supply circuit for electronic equipment that might be affected by overheating or by a fire, the power supply circuit including a bistable switch switchable between a first state in which the input terminal is connected to the output terminal, and a second state in which the input terminal is not connected to the output terminal, a first coil, and a second coil, the bistable switch being configured to switch to the first state when the magnetic field induced by the second coil is greater than the magnetic field induced by the first coil, and to switch to the second state when the magnetic field induced by the first coil is greater than the magnetic field induced by the second coil.

Abstract: A variable voltage generation circuit includes a first amplification circuit and a second amplification circuit. The first amplification circuit generates a first output voltage based on a reference voltage, a first feedback voltage, a temperature-varied voltage and a temperature-fixed voltage such that the first output voltage is varied in a first voltage range according to a variation of the operational temperature. The first amplification circuit generates the first feedback voltage based on the first output voltage. The second amplification circuit generates a second output voltage based on the first feedback voltage, a second feedback voltage, the temperature-varied voltage and the temperature-fixed voltage such that the second output voltage is varied in a second voltage range wider than the first voltage range according to the variation of the operational temperature. The second amplification circuit generates the second feedback voltage based on the second output voltage.

Abstract: Disclosed are a temperature compensation apparatus and method. The apparatus includes a reference signal generator that supplies at least one of a first current which is constant regardless of temperature variation and a second current which is proportional to temperature variation, a slope amplifier that determines a first output current having a second temperature coefficient which is a multiple of a first temperature coefficient of the second current, based on the first current and the second current, and a slope controller that determines a second output current having a third temperature coefficient, using a weighted average of the first current and the second current.

Abstract: Embodiments of a temperature sensing apparatus are disclosed. The apparatus may include a voltage generator and circuitry. The voltage generator may generate a first voltage level and a second voltage level dependent on an operating temperature. In response to a given change in the operating temperature, the first and second voltage levels may change, with the second voltage level changing by a different amount than the first voltage level. The voltage generator may generate a third voltage level. The circuitry may measure the first voltage level, the second voltage level, and the third voltage level, and may calculate the operating temperature dependent on a ratio of a difference between the first voltage level and the second voltage level and the third voltage level.

Abstract: A family of bandgap embodiments are disclosed herein, capable of operating with very low currents and low power supply voltages, using neither any custom devices nor any special manufacturing technology, and fabricated on mainstream standard digital CMOS processes. As such, manufacturing cost can be kept low, manufacturing yields of digital CMOS system-on-a-chip (SOC) that require a reference can be kept optimal, and manufacturing risk can be minimized due to its flexibility with respect to fabrication process node-portability. Although the embodiments disclosed herein use novel techniques to achieve accurate operations with low power and low voltage, this family of bandgaps also uses parasitic bipolar junction transistors (BJT) available in low cost digital CMOS process to generate proportional and complementary to absolute temperature (PTAT and CTAT) voltages via the base-emitter voltage (VEB) of BJTs and scaling VEB differential pairs to generate the BJTs thermal voltage (VT).

Abstract: An apparatus, system, and method are disclosed for compensating input offset of an amplifier having first and second amplifier output nodes. The method comprises generating a proportional-to-absolute temperature (PTAT) current, generating a complementary-to-absolute temperature (CTAT) current, and selecting, based on the input offset, one of the first and second amplifier output nodes into which a compensation current is to be coupled. The compensation current is based on a selected one of the PTAT current and CTAT current.

Abstract: In one example, a method includes determining, by a device, a plurality of voltage values that each correspond to a respective voltage drop across a remote p-n junction while the remote p-n junction is biased at different respective current levels, wherein each of the plurality of voltage values is a function of at least: one of the different respective current levels, a temperature of the remote p-n junction, and a series resistance between the device and the remote p-n junction. In this example, the method also includes, determining, by the device, an intermediate value based on a difference between at least three voltage values of the plurality of voltage values, wherein the intermediate value is not a function of the series resistance, and determining the temperature of the remote p-n junction based on the intermediate value such that the temperature is not a function of the series resistance.

Abstract: A semiconductor device includes: a voltage generation unit that generates a first voltage having a first temperature characteristic; a constant voltage generation unit that generates a constant voltage; and an adjustment unit that generates a second voltage having a second temperature characteristic and a third voltage having a third temperature characteristic using the first voltage and the constant voltage. The constant voltage generation unit generates the constant voltage independently of the adjustment unit. One of the second and third temperature characteristics is an opposite characteristic to the first temperature characteristic. The device can also include a control unit that selects one of the second and third voltages in response to a predetermined setting value.

Abstract: A temperature sensor peripheral generates an output voltage that is proportional to temperature, whose temperature coefficient can be adjusted to any desired value, whose temperature coefficient can be either positive or negative, whose room temperature voltage can be adjusted to any desired value, and whose temperature coefficient and room temperature voltage adjustments are independent from one another.

Abstract: A temperature sensor circuit implemented in electronic circuitry that senses the temperature at a site, digitizes the sensed temperature, and then outputs a signal representing such a sensed temperature. The temperature sensor circuit converts a voltage signal that is proportional to the temperature to a first digital value. The temperature sensor circuit converts a voltage signal that is inversely proportional to the temperature to a second digital value. The sensed temperature is determined as a function of a difference between the first and second digital values.

Abstract: A multi-chip package includes a first die having temperature sensors and a second die. The first die generates temperature deviation information of m (m<n) bits based on temperature information of n bits produced by the temperature sensors. The first die provides the temperature deviation information of m bits rather than the temperature information of n bits to the second die. An internal operation of the second die is controlled using the temperature deviation information output by the first die.

Abstract: Systems and methods for process variation power control in three-dimensional integrated circuits (3DICs) are disclosed. In an exemplary aspect, at least one process variation sensor is placed in each tier of a 3DIC. The process variation sensors report information related to a speed characteristic for elements within the respective tier to a decision logic. The decision logic is programmed to weight output from the process variation sensors according to relative importance of logic path segments in the respective tiers. The weighted outputs are combined to generate a power control signal that is sent to a power management unit (PMU). By weighting the importance of the logic path segments, a compromise voltage may be generated by the PMU which is “good enough” for all the elements in the various tiers to provide acceptable performance.

Abstract: An infrared (IR) temperature sensor includes a detector element, a wireless communication element, a memory, and a processor. The detector element detects IR radiation emitted from an object and generates an electrical signal proportional to the detected IR radiation. The memory is configured to store command instructions. The processor is operably connected to the detector element, the wireless communication element, and the memory. The processor is configured to execute the command instructions to transform the electrical signal into an output signal proportional to a temperature of the object and transmit the output signal with the wireless communication element. The IR sensor further includes a body that encloses the detector element, the wireless communication element, the memory, and the processor. The body defines an aperture that extends between the detector element and a mounting surface of the body and faces the object.

Abstract: A method for smoothing current consumed by an electronic device is based on a series of current copying operations and on a current source delivering a reference current. The reference current is delivered in such a manner that current consumed as seen from the power supply depends on the reference current.

Abstract: A system and method for efficient management of operating modes within an integrated circuit (IC) for optimal power and performance targets. A semiconductor chip includes processing units each of which operates with respective operating parameters. Temperature sensors are included to measure a temperature of the one or more processing units during operation. A power manager determines a calculated power value independent of thermal conditions and current draw. The power manager reads each of a first thermal design power (TDP) value for the processing units and a second TDP value for a platform housing the semiconductor chip. The power manager determines a ratio of the first TDP value to the second TDP value. Additionally, the power manager determines another ratio of the first TDP value to the calculated power value. Using the measured temperature, the ratios and the calculated power value, the power manager determines a manner to adjust the operating parameters.

Abstract: A differential on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output is provided.

Abstract: A temperature sensing system can include first and second temperature sensing circuits and a digitizing encoder. The first and second temperature sensing circuits can include respective devices with semiconductor junction areas. Temperature information can be determined from one or more characteristic signals measured from the temperature sensing circuits. A feedback circuit can be configured to provide one or more offset signals to the digitizing encoder. The one or more offset signals can correspond to components or characteristics of the first and second temperature sensing circuits. In an example, at least one of the first and second temperature sensing circuits can include an adjustable load circuit for use with the other of the first and second temperature sensing circuits.

Abstract: An electronic apparatus includes a first voltage detection circuit which detects when a voltage, becomes higher than a first level after the voltage starts to be supplied to a peripheral circuit, and detects when the voltage becomes lower than a second level after a supply of the voltage to the peripheral circuit starts to be interrupted, and a second voltage detection circuit which detects when the voltage becomes lower than a reference level while the peripheral circuit operates. The second level is lower than the reference level.

Abstract: A method for matching a pair of matched bipolar transistors in an integrated circuit is disclosed. Within a device, it is determined which transistor is a correctable transistor of the pair of bipolar transistors. The correctable transistor is the transistor of the pair of bipolar transistors having a chosen characteristic which when electrically stressed will converge with a chosen characteristic of the other transistor of the pair of bipolar transistors. The pair of bipolar transistors are matched by electrically stressing the correctable transistor of the bipolar transistors.

Abstract: A processing system includes a processor and a temperature security module coupled to provide a temperature tamper signal to the processor. The temperature security module includes a shelf mode trim value, an operating mode trim value, and a programmable temperature trim value. One of the programmable temperature trim value, the shelf mode trim value, and the operating mode trim value, is used based on a deployment mode of the processing system to set a temperature monitor trim value.

Abstract: Described are apparatuses and methods for generating a temperature-stabilized reference voltage on a semiconductor chip. An apparatus may include a differential amplifier including a first input, a second input, and an output. The apparatus may further include a first bipolar junction transistor (BJT) coupled to the first input; a second BJT coupled to the second input; and beta compensation circuitry, coupled to the first BJT and the second BJT, to regulate a first collector current of the first BJT to be independent of a first current gain of the first BJT and a second collector current of the second BJT to be independent of a second current gain of the second BJT. Other embodiments may be described and/or claimed.