Abstract: An integrated circuit device comprises component devices (that include primary and alternate devices) and storage elements connected to the component devices. The storage elements store different sets of repair addresses indicating which of the primary devices and alternate devices are to be enabled. Further, a controller is connected to the storage elements, and a temperature sensor is connected to the controller. The temperature sensor senses the temperature. The controller selects one of the different storage elements to select at least one of the sets of repair addresses based on the temperature sensed by the temperature sensor. The sets of repair addresses share use of at least one of the alternate devices and at least one of the primary devices.

Abstract: An electronic circuit for providing a voltage or a current linearly dependent on temperature within a temperature range, including at least two identical MOS transistors conducting the same drain current, each transistor having a fully depleted channel which is separated from a doped semiconductor region by an insulating layer, the conductive types of the dopants of said doped semiconductor regions being different, said voltage or said current being proportional to the difference between the gate-source/drain voltages of the two transistors.

Abstract: There is provided an apparatus for outputting a signal, including: a reference signal generating unit outputting a first temperature coefficient signal having a positive temperature coefficient and a second temperature coefficient signal having a negative temperature coefficient; and an output unit outputting an output signal having a plurality of temperature coefficients, based on the first temperature coefficient signal and the second temperature coefficient signal.

Abstract: A method for generating a reference voltage is disclosed. The method includes generating a proportional-to-absolute temperature (PTAT) voltage across a first pseudo resistor. The first pseudo resistor includes a transistor. The method also includes converting the PTAT voltage to a current based on a resistance of the first pseudo resistor. The method also includes mirroring the current using a current mirror circuit and converting the mirrored current to the PTAT voltage using a second pseudo resistor. The second pseudo resistor includes a transistor. The first pseudo resistor and the second pseudo resistor include equal transistor types. The method also includes generating a complimentary-to-absolute temperature (CTAT) voltage, and summing the converted PTAT voltage and the CTAT voltage to produce the reference voltage. The resulting reference voltage is temperature independent.

Abstract: The transition frequency of an inverter can vary with the transconductance of its internal transistors as a function of temperature and bias level. To maintain consistent transition frequency across temperatures, and therefore reduce the phase noise variation introduced by the inverter, systems, methods, and circuits are disclosed for biasing the inverter with a temperature varying current such that the transconductance of transistors remains constant across temperatures, while maintaining the lowest possible power consumption to do so. Various embodiments can include using current sources that have proportional-to-absolute-temperature (PTAT) devices.

Abstract: A temperature sensing apparatus disposed inside a chip includes first and second current generation circuits, first and second current-to-frequency converters, and a counting unit. The first current generation circuit is configured to generate a first current varying proportional to the temperature of the temperature sensing apparatus. The second current generation circuit is configured to generate a second current independent of temperature. The first current-to-frequency converter is configured to generate a first frequency signal with a first frequency indicative of the first current, and the second current-to-frequency converter is configured to generate a second frequency signal with a second frequency indicative of the second current. The counting unit is configured to generate a digital signal indicative of the temperature according to the difference between the first and second frequencies.

Abstract: The device for generating a reference current proportional to absolute temperature comprises processing means connected to the terminals of a core and designed to equalize the voltages across the terminals of the core, the core being designed to then be traversed by an internal current proportional to absolute temperature, and an output module designed to deliver to an output terminal the said reference current on the basis of the said internal current; the processing means comprise a self-biased amplifier possessing at least one first stage arranged according to a folded setup and comprising first PMOS transistors arranged in a setup of the common-gate type, and a feedback stage whose input is connected to the output of the amplifier and whose output is connected to the input of the first stage as well as to at least one terminal of the core.

Abstract: A power semiconductor device module includes a plurality of inverters, each having a first transistor and a second transistor that are interposed in series between a first potential and a second potential and that operate complementarily. The plurality of inverters are assembled into a module. Only one predetermined inverter of the plurality of inverters is configured to detect temperatures of the first and second transistors, and control terminals for detection of the temperatures of the first and second transistors protrude from sides of the module.

Abstract: Some implementations provide a semiconductor package that includes a first die and a second die adjacent to the first die. The second die is capable of heating the first die. The semiconductor package also includes a leakage sensor configured to measure a leakage current of the first die. The semiconductor package also includes a thermal management unit coupled to the leakage sensor. The thermal management unit configured to control a temperature of the first die based, on the leakage current of the first die.

Abstract: A control system for an engine includes a control module and a resistor. The resistor is connected in series between the control module and a non-contact position sensor. The control module selectively detects a fault of the non-contact position sensor based on a voltage drop across the resistor. A method for controlling an engine includes providing a resistor connected in series between a control module and a non-contact position sensor, and selectively detecting a fault of the non-contact position sensor based on a voltage drop across the resistor.

Abstract: A sensor output IC has a switching element that turns on and off between output terminals based on a detection signal from a sensor, and a temperature-limiting circuit that maintains the switching element in an off state when a temperature at the sensor output IC becomes a predetermined value or more.

Abstract: A band gap reference circuit includes an error-amplifier-based current mirror coupled between a first supply node and a pair of intermediate voltage nodes, and a matched diode pair for providing a proportional-to-absolute temperature (PTAT) current. The matched diode pair includes a first diode connected between a first intermediate voltage node from the pair of intermediate voltage nodes and a second supply node, and a second diode connected in series with a resistor between a second intermediate voltage node from the pair of intermediate voltage nodes and the second supply node. Each diode has a P-N diode junction that is a homojunction.

Abstract: An energy harvesting integrated circuit (IC) includes electrical connectors, each having a portion of a first material and a portion of a second material. The first and the second materials have a thermoelectric potential. The IC includes a trace of the first material coupled to the first material of each electrical connector, and a trace of the second material coupled to the second material of each electrical connector and the first trace. A portion of the second trace extends away from a portion of the first trace. The IC has charge storing elements coupled to the first and/or second traces. The first material and the second material are heated to create an electron flow from a thermal gradient between a first zone of the heated first and second materials and a second zone of the first and the second materials away from the first zone.

Abstract: A compensation circuit for controlling a variation in output impedance of at least one buffer circuit includes a monitor circuit and a control circuit coupled with the monitor circuit. The monitor circuit includes a pull-up portion including at least one PMOS transistor and a pull-down portion comprising at least one NMOS transistor. The monitor circuit is configured to track an operation of an output stage of the buffer circuit and is operative to generate at least a first control signal indicative of a status of at least one characteristic of corresponding pull-up and pull-down portions in the output stage of the buffer circuit over variations in PVT conditions to which the buffer circuit may be subjected. The control circuit is operative to generate a set of digital control bits as a function of the first control signal. The set of digital control bits is operative to compensate the pull-up and pull-down portions in the output stage of the buffer circuit over prescribed variations in PVT conditions.

Abstract: A method for managing thermal condition of a thermal zone that includes multiple thermally controllable components include determining thermal relationship between the components and reducing temperature of a first component by reducing thermal dissipation of a second component.

Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

Abstract: A clock source is configured to provide an oscillating signal to be divided into a clock signal. A temperature sensor senses a first temperature of the clock source. The clock source is subjected to at least one second temperature implemented by a temperature alteration module. A calibration module calibrates the clock signal based on the at least one second temperature, the first temperature, a reference signal, and the oscillating signal at the at least one second temperature.

Abstract: Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided.

Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used.

Abstract: The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polysilicon resistors, coupled to the first polysilicon resistor in series. The first polysilicon resistor and the at least one of the second polysilicon resistors are P-type polysilicon, and a doping concentration of the first polysilicon resistor is different from a doping concentration of the at least one of the second polysilicon resistors. The polysilicon resistor formed by serially coupling the first polysilicon resistor and the at least one of the second polysilicon resistors is applied with a constant current such that a reference voltage or a constant voltage is generated.

Abstract: A thermal sensor is placed in a low power state. When the sensor is triggered to wake from the low power state, it initiates a thermal sensor scan from the sensor value measured prior to the low power state. The thermal sensor initially adjusts the measured value with a fast count by a configurable adjustment of greater than 1, and after reaching an inflection point performs normal count by adjustments of 1.

Abstract: Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit.

Abstract: A circuit arrangement for temperature measurement comprises an input for connecting a temperature-sensitive element, a that is connected to a first input of a comparator. A reference voltage is connected to a second input of the comparator. Furthermore, the arrangement comprises a sequential logic, that is coupled to the output of the comparator that comprises a first output and a second output. A digitally controllable switch element for providing a superposition signal is connected to the output of the sequential logic and the first input of the comparator.

Abstract: An apparatus and method for testing is provided. An integrated circuit includes a comparison circuit that is arranged to trip based on a power supply signal reaching a trip point. The integrated circuit also includes an analog-to-digital converter that is arranged to convert the power supply signal into a digital signal. The integrated circuit also includes a storage component that stores a digital value associated with the digital signal, and provides the power supply value at an output pin of the integrated circuit. The integrated circuit includes a latch that is coupled between the analog-to-digital converter and the storage component. The latch is arranged to open when the comparison circuit trips, such that, when the comparison circuit trips, the storage component continues to store a digital value such that the digital value corresponds to the voltage associated with the power supply signal when the comparison circuit tripped.

Abstract: A voltage reference is produced from PTAT, CTAT, and nonlinear current components generated in isolation from each other and combined to create the voltage reference.

Abstract: For thermal compensation for an intrinsic element in a system, a circuit and method are proposed to predict the temperature variation caused by power loss of the intrinsic element, in addition to sense the external environment temperature variation of the intrinsic element, and thus sense the operational temperature of the intrinsic element more precisely.

Abstract: A current reference circuit configured to generate a reference current with a programmable temperature slope is disclosed. The current reference circuit includes a resistor. The current reference circuit includes a bandgap voltage circuit configured to generate a bandgap voltage and coupled to the resistor. The current reference circuit includes a bias voltage circuit configured to generate a variable-polarity bias voltage and coupled to the bandgap voltage circuit. The bandgap voltage circuit is configured to add the variable-polarity bias voltage to the bandgap voltage to generate the reference current through the resistor.

Abstract: Provided is a temperature detection device capable of attaining low current consumption at no expense of detection speed at around a temperature to be detected. The temperature detection device includes a control circuit for outputting a control signal for controlling ON/OFF of such internal circuits as a reference voltage circuit and a comparator. In the control circuit, in order to increase the detection speed at around the temperature to be detected, an oscillation frequency of an oscillation circuit has positive temperature characteristics. Further, the control circuit includes a waveform shaping circuit so as to optimize the waveform of the control signal for controlling ON of the internal circuits, to thereby attain low current consumption.

Abstract: A semiconductor device of the present invention is a semiconductor device applicable in a cooling system including an ECU functioning as a setting part that sets target temperature of a refrigerant used to cool the semiconductor device, and a sensor functioning as a detector that detects the temperature of the refrigerant as refrigerant's temperature. The semiconductor device generates variable heating loss. The semiconductor device includes a heating controller that controls the heating loss in the semiconductor device such that the target temperature and the refrigerant's temperature become the same.

Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.

Abstract: A temperature compensation circuit includes: a sensing circuit arranged to sense a temperature to generate a sensing signal; an operational circuit arranged to sample the sensing signal to generate a sample signal during a first phase, and arranged to generate an output signal according to the sensing signal and the sample signal during a second phase; and a capacitive circuit arranged to provide a capacitance adjusted by the output signal.

Abstract: A temperature stable comparator circuit, comprised of: a branch C having a first end, a second end, a first type-1 device and first type-2 device, wherein the first type-1 device and the first type-2 device are connected to a node O; a branch B having a first end, a second end, a second type-1 device, a second type-2 device, and a resistor; and a branch A having a first end, a second end, a third type-2 device and a current-control device; wherein the first ends of the branch A, branch B, and branch C are commonly connected, and the second ends of the branch B and branch C are commonly connected.

Abstract: A shock detector, such as for disk drives, which eliminates discrete external capacitors used in prior art devices. A first stage operational amplifier (without external capacitors) provides part of the gain required. This is followed by a second stage switched capacitor high pass filter (without external capacitors) that provides the remaining gain required while filtering out the DC offset of the first stage operational amplifier. In order to cover the range of frequencies expected without aliasing problems, two switched capacitor high pass filters in parallel are used, each designed with a different cut-off frequency.

Abstract: A circuit comprises a frequency divider coupled to receive an oscillating signal generated by an oscillator and a division ratio and configured to divide the oscillating signal by the division ratio into a clock signal; a temperature compensation circuit configured to measure a temperature of the oscillator and generate a division ratio to be provided to the frequency divider and a first value on the basis of the measured temperature; and a control system configured to control connection between a calibration element and the oscillator based on the first value and the oscillating signal of the oscillator.

Abstract: A method is intended to make it possible to drive a PTC electrical load element with a switching unit with the highest possible operational reliability. For this purpose, the electric current is switched off if a predetermined current threshold value is exceeded, the magnitude of the current threshold value being determined from the operating parameters of the load element.

Abstract: In an embodiment a circuit provides an active resistance that is adjusted with temperature, the active resistance has a magnitude and temperature coefficient that is selected by the values of external resistors. The active resistance is controlled by an active resistance controller that uses a temperature dependent source and a temperature stable source to control adjustment of a first adjustable resistance to maintain correspondence between a temperature dependent parameter and a temperature stable parameter, and adjusts a second adjustable resistance that is part of the active resistance in correspondence with adjustment of the first adjustable resistance.

Abstract: A circuit used for indicating process corner and extreme temperature mainly comprises a proportional to absolute temperature (PTAT) current source, a negative to absolute temperature (NTAT) current source, a constant to absolute temperature (CTAT) current source, a corner detector, a poly detector, an extreme temperature detector. The circuit can improve more power consumption without trade-off. In debug phase, the circuit can read out a state of a suspect sample and can run simulation check quickly to identify the real problem. In production phase, the circuit can easily read out at a processing station. In the mean time, a large quantity of data can be easily collected and analyzed.

Abstract: A circuit arrangement having at least one analog switch, which is operated by a supply voltage and which comprises a switching signal contact and a pair of switch contacts, whereby applied to the switching signal contact is an electrical switching signal depending on which an electrical connection can be switched between the switch contacts whose internal on-resistance is temperature dependent, whereby the circuit arrangement has in the vicinity of the at least one analog switch at least one additional similar reference analog switch, which is operated with the same common supply voltage and which is controlled such that the switch contacts thereof are/can be connected continuously via the internal temperature-dependent on-resistance thereof, whereby at least one comparison circuit is provided by means of which depending on the comparison of the internal on-resistance of the at least one reference analog switch with at least one external reference resistance or an otherwise setpoint setting of the reference a

Abstract: An electronic device generates a current with a predetermined temperature coefficient. The circuit comprises a temperature coefficient (TC) component receiving a bias current, a differential amplifier providing a buffered output voltage based on the voltage across the TC component and a resistor receiving an TC current based on the differential amplifier output voltage. The differential amplifier has a predetermined input related offset which decreases the voltage drop across the resistor. The temperature coefficient component could have either a negative temperature component (NTC) or a positive temperature component (PTC).

Abstract: A system and method are provided for using a system-on-chip (SoC) memory speed control logic core to control memory maintenance and access parameters. A SoC is provided with an internal hardware-enabled memory speed control logic (MSCL) core. An array of SoC memory control parameter registers is accessed and a set of parameters is selected from one of the registers. The selected set of parameters is delivered to a SoC memory controller, to replace an initial set of parameters, and the memory controller manages an off-SoC memory using the delivered set of parameters.

Abstract: A programmable temperature sensing circuit includes a comparator, first and second CTAT sensing elements, first and second PTAT reference circuits, and a selection circuit. When a selection signal is a first logic state, an output terminal of the first PTAT reference circuit is coupled to the second CTAT temperature sensing element for providing a first threshold voltage to the second input of the comparator. When the selection signal is a second logic state different from the first logic state, a series-connection of the first PTAT reference circuit and the second PTAT reference circuit are coupled to the second CTAT temperature sensing element for providing a second threshold voltage to the second input of the comparator. The comparator provides an output voltage indication when a voltage provided by the first CTAT sensing element compares favorably with the selected one of the first or second threshold voltages.

Abstract: A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.

Abstract: A fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.

Abstract: A method and circuitry for adjusting the delay of a variable delay line (VDL) in a delay locked loop (DLL) or other delay element or subcircuit on an integrated circuit is disclosed. Such delay circuitry will inherently have a delay which is a function of temperature. Such temperature-dependent delays are compensated for by adjusting the power supply voltage of the VDL, delay element, or subcircuit. Specifically, a temperature sensing stage is used to sense the temperature of the integrated circuit. Information concerning the sensed temperature is sent to a regulator which derives the local power supply voltage from the master power supply voltage, Vcc, of the integrated circuit. If the temperature sensed is relatively high, the regulator increases the local power supply voltage, thus decreasing the delay and offsetting the increase in delay due to temperature.

Abstract: A temperature compensation circuit for generating a temperature compensating reference voltage (VREF) may include a Bandgap reference circuit configured to generate a Bandgap reference voltage (VBGR) that is substantially temperature independent and a proportional-to-absolute-temperature reference voltage (VPTAT) that varies substantially in proportion to absolute temperature. The circuit may also include an operational amplifier that is connected to the Bandgap reference circuit and that has an output on which VREF is based. The circuit may also include a feedback circuit that is connected to the operational amplifier and to the Bandgap reference circuit and that is configured so as to cause VREF to be substantially equal to VPTAT times a constant k1, minus VBGR times a constant k2.

Abstract: To provide, with a simple structure, a voltage controlled oscillator, etc., whose center oscillation frequency is stable even if there is a change in the temperature. A delay element includes: a delay generating part which adds a delay amount to an input signal to generate an output signal; and a delay control part which controls the delay. The delay control part has a delay adjusting circuit which outputs a first control signal for adjusting the delay amount, and a temperature compensating circuit which outputs a second control signal for compensating property changes caused by the temperature. The delay control part outputs a third control signal obtained by synthesizing the first control signal and the second control signal to the delay generating part to control the delay amount. The delay control part obtains the third control signal by having the delay adjusting circuit and the temperature compensating circuit connected in series.

Abstract: Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided.

Abstract: A die temperature sensor circuit (200) includes an amplifier (203) that has first and second stages of amplification and that has bipolar transistors (201 and 202) as an input differential pair. The bipolar transistors have different current densities. A difference between base-emitter voltages of the bipolar transistors is proportional to absolute temperature of the bipolar transistors. The bipolar transistors also provide amplification for the first stage of amplification. Multiple feedback loops maintain a same ratio between the current densities of the bipolar transistors over temperature by changing collector currents that bias the bipolar transistors. A feedback loop includes a second stage of amplification and such feedback loop cancels effect that base currents of the bipolar transistors have on an output signal of the die temperature sensor circuit.

Abstract: A clock generation circuit is provided, having a bandgap reference circuit, a frequency controlled resistor, a comparison circuit and a voltage controlled oscillator. The bandgap reference circuit generates a first voltage. The frequency controlled resistor is coupled to a first node to provide a second voltage. The comparison circuit generates a first current according to a difference between the first voltage and the second voltage. The voltage controlled oscillator outputs first, second and third output clocks according to a third voltage on a second node, wherein the third voltage is generated according to the first current, and the second and third output clocks are fed back to the frequency controlled resistor such that the frequency controlled resistor converts the first current into the second voltage according to the second and third output clocks.