Abstract: An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced.

Abstract: The present document relates to voltage mirror circuits. A voltage mirror circuit, having an input node and an output node is configured to provide substantially equal voltage levels at the input node and the output node. The voltage mirror circuit comprises an input current source transistor, an input gain transistor arranged in series with the input current source transistor such that the input gain transistor is traversed by the bias current, wherein the voltage level at the input node corresponds to the voltage drop across the input current source transistor and the input gain transistor. An intermediate gain transistor forms a first current mirror with the input gain transistor. An output current source transistor forms a second current mirror with the intermediate current source transistor. An output gain transistor is wherein the voltage level at the output node corresponds to the voltage drop across the output current source transistor and the output gain transistor.

Abstract: A current monitoring circuit is disclosed. The current monitoring circuit includes a main transistor arrangement for connection in series with a load and a set of one or more measurement branches in parallel with the main transistor arrangement. Each measurement branch comprises a series resistor and switch for controlling the connection of the branch into circuit. A gate controller is provided for controlling the switching of the main transistor arrangement and branch switches and a sense amplifier is included for measuring a current through the load based on the current flowing through the main transistor arrangement or a branch.

Abstract: A negative reference voltage generating circuit includes a clamp-type reference voltage circuit and a differential amplifier. The clamp-type reference voltage circuit is connected between a node of a first negative voltage which is equal to or lower than the ground voltage and a node of a second negative voltage which is lower than the first negative voltage, and is formed by connecting a first circuit and a second circuit in parallel. The differential amplifier amplifies the difference between a node voltage in the first circuit and a node voltage in the second circuit, and outputs a negative reference voltage.

Abstract: In one embodiment, a method includes determining, for an integrated circuit chip, a delay measurement corresponding to a first number of stages in a delay line. A power supply voltage measurement is also determined. The method determines a second number of stages correlated to the power supply voltage measurement. The second number of stages correspond to a desired timing delay. It is determined if a power supply voltage should be adjusted using a comparison based on the first number of stages and the second number of stages. A control signal is output for adjusting the power supply voltage when it is determined the power supply voltage should be adjusted.

Abstract: A filling device for filling containers with a food product is provided for use in the food industry. The filling device comprises at least one weighing device including at least one piezoelement configured to determine a filling amount of the food product.

Abstract: A current conveyor circuit, which comprises: a first current transmitting route; a second current transmitting route, which has the same devices as the first current transmitting route; and at least one control circuit, to control the first current transmitting route and the second current transmitting route to enter a normal mode or a current splitting mode, wherein the first current transmitting route and the second current transmitting route are both enabled and can transmit current in the normal mode, where the first current transmitting route is enabled to transmit current but the second current transmitting route is disabled thus can not transmit current in the current splitting mode.

Abstract: A PWM DC-DC converter includes a switching unit converting an input voltage into an output voltage, a PID controller producing a PID control voltage, a comparator producing a switching control voltage, a switching controller which supplies a switching control signal to the switching unit, turns on a charge switch and at the same time turns off a discharge switch in an on-period of the switching control voltage, and turns off the charge switch and at the same time turns on the discharge switch in an off-period of the switching control voltage, and an operating point compensation unit which operates in response to an operating point compensation signal and supplies an initialization voltage of a uniform level to a node during a predetermined period for an initial drive.

Abstract: The present document relates to voltage mirror circuits. A voltage mirror circuit, having an input node and an output node is configured to provide substantially equal voltage levels at the input node and the output node. The voltage mirror circuit comprises an input current source transistor, an input gain transistor arranged in series with the input current source transistor such that the input gain transistor is traversed by the bias current, wherein the voltage level at the input node corresponds to the voltage drop across the input current source transistor and the input gain transistor. An intermediate gain transistor forms a first current mirror with the input gain transistor. An output current source transistor forms a second current mirror with the intermediate current source transistor. An output gain transistor is wherein the voltage level at the output node corresponds to the voltage drop across the output current source transistor and the output gain transistor.

Abstract: A method of testing large-scale integrated circuits including multiple instances of memory arrays, and an integrated circuit structure for assisting such testing. In one embodiment, voltage drops due to parasitic resistance in array bias conductors are determined by extracting layout parameters, and subsequent circuit simulation that derives the voltage drops in those conductors during operation of each memory array. In another embodiment, sense lines from each memory array are selectively connected to a test sense terminal of the integrated circuit, at which the array bias voltage at each memory array is externally measured. Feedback control of the applied voltage to arrive at the desired array bias voltage can be performed.

Abstract: A power amplifier, includes: a first and a second amplifier circuits that are controlled so that one of them do not amplify a signal when another one of them amplifies the signal; a first impedance conversion circuit, coupled between the first amplifier circuit and the output terminal, that converts an output impedance of the first amplifier circuit; a second impedance conversion circuit, coupled between the second amplifier circuit and a wiring coupling the first impedance conversion circuit and the output terminal, that converts an output impedance of the second amplifier circuit; and a connection circuit that, when the first amplifier circuit amplifies the signal, forms a path which bypasses the second impedance conversion circuit between a reference potential and the wiring coupling the first impedance conversion circuit and the output terminal, by coupling a wiring coupling the first amplifier circuit and the output terminal, with the reference potential.

Abstract: A sense amplifier system includes a first path, a second path, a memory cell, a first reference cell, a second reference cell, and a switch component. The switch component is configured to switch connections between the first and second reference cells and the first and second paths according to a sampling phase and an amplification phase.

Abstract: A distribution current is split into a first control current, a second control current, and a third control current, in an apportionment according to a distribution command. A first control voltage is generated in response to the third control current. A second control voltage is generated as indication of the first control current, and a third control voltage is generated as indication of the second control current. Optionally, de-emphasis contribution of a first driver, a second driver and a third driver to an output is controlled based, at least in part, on the first control voltage, the second control voltage and the third control voltage, respectively.

Abstract: In one example embodiment, a transmitter module includes a header electrically coupled to a chassis ground. First and second input nodes are configured to receive a differential data signal. A buffer stage has a first node coupled to the first input node and a second node coupled to the second input node. An amplifier stage has a fifth node coupled to a third node of the buffer stage and a sixth node coupled to a signal ground that is not coupled to the chassis ground. An optical transmitter has an eighth node coupled to a seventh node of the amplifier stage and a ninth node configured to be coupled to a voltage source. A bias circuit is configured to couple a fourth node of the buffer stage to a bias current source.

Abstract: In one embodiment, an integrated circuit (IC) device includes a first logic block having performance characteristics, a first critical path monitor (CPM) configured to monitor the performance characteristics of the first logic block, and a first CPM envelope circuit enveloping the first CPM. The first logic block is configured to operate in at least one of a first functional mode and a first scan mode. The first CPM is adapted to operate in at least one of a second functional mode and a second scan mode. The first and second functional modes use higher clock frequencies, respectively, than the first and second scan modes. The first CPM envelope circuit comprises a clock-gate circuit adapted to allow the IC device to operate in a mixed mode, wherein the first CPM operates in the second functional mode while the first logic block operates in the first scan mode.

Abstract: A trimming circuit, installed in a semiconductor integrated circuit that has multiple different target values, the trimming circuit to adjusts circuit characteristics of the semiconductor integrated circuit to make output values of the semiconductor integrated circuit correspond to multiple desired target values and includes a setting-value table memory to store multiple setting value groups respectively containing different combinations of multiple setting values related to the multiple target values; a trimming cell circuit to store first selection information indicating one group of the multiple setting-value groups stored in the setting-value table memory; and a selector to select one group from the multiple setting-value group stored in the setting-value table memory based on the first selection information, and select one setting value from multiple setting values in the selected setting-value group based on external second selection information to output the selected setting value.

Abstract: The present invention relates to a high efficiency LED driver and driving method thereof. In one embodiment, a high efficiency LED driving method configured for a LED device can include: (i) receiving a DC bus voltage and generating a driving voltage for the LED device through a power switch; (ii) comparing the DC bus voltage against a sum of the driving voltage and a first reference voltage; (iii) where when the DC bus voltage is greater than the sum of the driving voltage and the first reference voltage, generating a first output current; (iv) where when the DC bus voltage is greater than the driving voltage and less than the sum of the driving voltage and the first reference voltage, generating a second output current; and (v) matching an average current of the first output current and the second output current with a corresponding driving current.

Abstract: A circuit includes a first field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal; and a second field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal. The second field effect transistor and the first field effect transistor are of the same type, i.e., both n-channel transistors or both p-channel transistors. The second drain-source terminal of the first field effect transistor is coupled to the first drain-source terminal of the second field effect transistor; and the gate of the second field effect transistor is coupled to the first drain-source terminal of the second field effect transistor. The resulting three-terminal device can be substituted for a single field effect transistor that would otherwise suffer breakdown under proposed operating conditions.

Abstract: Methods and structures for restoring an electrical parameter of a field-effect transistor in an integrated circuit deployed in an end product. A source, a drain, and a gate electrode of a field-effect transistor are coupled with ground. A restoration voltage is applied to a well beneath the field-effect transistor while the source, the drain, and the gate electrode of the field-effect transistor are coupled with ground. The well may be coupled with either a positive supply voltage or ground when a switch is in a first position during normal operation of the integrated circuit and with the restoration voltage when the switch is in a second position during a relaxation operation.

Abstract: A ballast circuit for a Light Emitting Diode (LED) has a regulator element coupled to the LED and to an input voltage source. A control circuit is coupled to the LED and to an input voltage source. A first switching device is coupled in series with the regulator element. A second switching device is coupled to the input voltage and the control circuit.

Abstract: A reference voltage generating circuit has more than two first wells each having a first impurity concentration and more than two second wells each having a second impurity concentration different from the first impurity concentration. A first group of MOS transistors has more than two MOS transistors formed in respective ones of the first wells. A second group of MOS transistors has More than two MOS transistors formed in respective ones of the second wells.

Abstract: An electronic circuit, including, a power amplifier adapted to amplify an RF signal and provide it as output from the integrated circuit; a power source that is adapted to provide an unregulated voltage to the power amplifier; a regulator adapted to provide a regulated bias voltage; a subtracter that is adapted to accept a voltage proportional to the unregulated voltage and subtract it from the bias voltage to provide a reference voltage to the power amplifier; wherein the power amplifier is adapted to use the reference voltage to adjust the output from the power amplifier so that it will provide a stable power output.

Abstract: A method of providing multiple voltage references to a radio-frequency device using a single analog line includes the steps of setting the analog line voltage level to be a first reference voltage signal; instructing a first voltage reference device to memorize the first reference voltage signal by sending a first digital control signal to a digital line; providing the first reference voltage signal to the RF device via the first voltage reference device; re-setting the analog line voltage level to be a second reference voltage signal; instructing a second voltage reference device to memorize the second reference voltage signal by sending a second digital control signal to the digital line, the second digital control signal being different from the first digital control signal; and providing the second reference voltage signal to the RF device via the second voltage reference device.

Abstract: The invention provides a temperature detecting apparatus, a switch capacitor apparatus and a voltage integrating circuit. The voltage integrating circuit includes an operating amplifier, a capacitor and a current source. The operating amplifier has a positive input end, a negative input end and an output end. The output end of the operating amplifier generates an output voltage, and the positive input end receives a reference voltage. The capacitor is coupled between the output end and the negative input end of the operating amplifier. The current source is coupled to the output end of the operating amplifier. The current source draws a replica current from the capacitor, and a current level of the replica current is determined according to a current level of a current flowing to the negative input end of the operating amplifier.

Abstract: A current generator includes first and second current generators and an output current generator. The first current generator has an output for providing a first current, the first current proportional to a difference between a first power supply voltage and a first gate-to-source voltage. The second current generator has an output for providing a second current, the second current proportional to a second gate-to-source voltage. The second gate-to-source voltage is approximately equal to the first gate-to-source voltage. The output current generator provides an output current proportional to a sum of said first current and said second current.

Abstract: Embodiments are provided that include a circuit for generating voltage in a memory. One such circuit includes a charge pump circuit including a first transistor, a high-voltage switch circuit, and a cut-off switch circuit arranged to reduce leakage current from the charge pump circuit. The cut-off switch circuit includes a second transistor, wherein an output of the charge pump circuit is coupled to one of a source node and a drain node of the second transistor, and a first control signal is input at a gate of the second transistor. Further embodiments provide a method for generating voltage. One such method includes enabling a first transistor coupled to an output of a charge pump circuit when the charge pump is operating and disabling the first transistor coupled to the output of the charge pump circuit when the charge pump circuit is not operating.

Abstract: Methods, systems, and structures for generating a target reference voltage are provided. A circuit includes a voltage adjuster, a switch, and a current source. The switch selectively connects the current source to circuit paths in the voltage adjuster. A first of the circuit paths incrementally decreases the target reference voltage with respect to the input voltage. A second of the circuit paths incrementally increases the target voltage with respect to the input voltage.

Abstract: A switchable current source in which a reference voltage value to be used in driving the gate of an output transistor is sampled and stored. The reference voltage is derived using a reference current source which feeds a current sensing transistor. The current sensing transistor is turned off when the output transistor is turned off, so that the reference current source then does not consume power. A large reference current Iref can then be used for a short time.

Abstract: A port current control arrangement, constituted of: a current source arranged to generate a reference current or a predetermined value; an on-chip reference resistor, the generated reference current arranged to produce a reference voltage across the on-chip reference resistor; an on-chip sense resistor, a port current arranged to flow through the on-chip sense resistor and produce a sense voltage across the on-chip sense resistor, wherein the resistance of the on-chip sense resistor exhibits a predetermined relationship with the resistance of the first on-chip reference resistor; and a current control circuit, a first input of the current control circuit arranged to receive the produced reference voltage and a second input of the current control circuit arranged to receive the sense voltage, wherein the current control circuit is arranged to limit the port current to a value responsive to the received reference voltage and the received sense voltage.

Abstract: Circuitry, which includes a first switching transistor element having a first gate, a second switching transistor element having a second gate, a third switching transistor element having a third gate, and a fourth switching transistor element having a fourth gate, is disclosed. The first switching transistor element and the third switching transistor element are coupled in series between a first power source and a first downstream circuit. The second switching transistor element and the fourth switching transistor element are coupled in series between a second power source and the first downstream circuit. A voltage swing at the first gate and a voltage swing at the second gate are both about equal to a first voltage magnitude. A voltage swing at the third gate and a voltage swing at the fourth gate are both about equal to a second voltage magnitude.

Abstract: A pass device configured from a common gate transistor, wherein an input voltage is applied to the source and an output at the drain is applied to a load. The input resistance of the pass device increases as the input voltage is reduced and limits the useful range of the input voltage. Increasing the gate to source voltage (Vgs) by applying a negative voltage to the gate reduces the input resistance and increases the range of operation of the pass device.

Abstract: An integrated circuit (IC) includes an adaptive voltage scaling (AVS) controller configured to control a voltage supplied to a portion of the IC and at least one sensor configured to sense at least one state of the IC and to provide an output signal indicative of the at least one sensed state to the AVS controller, the IC having a first setting and a second setting, the AVS controller being configured to use the output signal to control the voltage in the first setting and the AVS controller being configured to control the voltage independently of the output signal in the second setting. Also a method of performing AVS is provided.

Abstract: An input/output circuit implemented in an integrated circuit is described. The input/output circuit comprises an input/output pad and a voltage control circuit coupled to the input/output pad. The voltage control circuit sets a voltage at the input/output pad at a first voltage when the input/output pad is implemented as an input pad and at a second voltage when the input/output pad is implemented as an output pad. Methods of implementing input/output circuits in an integrated circuit are also described.

Abstract: Aspects of the invention include a constant current source that generates a constant current, apart from a constant current circuit, and a temperature detection zener diode (a temperature detection element). The input side of the constant current source can be connected to a power source. The output side of the constant current source can be connected to the anode of the temperature detection diode. The anode of the temperature detection zener diode can also be connected to one end of a resistor provided in the constant current circuit. Further, the cathode of the temperature detection zener diode can be connected to a GND. Further, the temperature detection zener diode can be incorporated in the same semiconductor substrate as a semiconductor substrate into which an IGBT is built.

Abstract: A microcomputer includes a first switch coupled between a main power supply terminal and a power supply node, and a second switch coupled between an auxiliary power supply terminal and the power supply node. The microcomputer compares a voltage V1 of the main power supply terminal with a reference voltage VR1. When V1>VR1, the microcomputer turns on the first switch and turns off the second switch, and when V1<VR1, the microcomputer turns off the first switch, and turns on/off the second switch to gradually increase a voltage V3 of the power supply node. Thus, the operation of a clock generation circuit driven by V3 can be stable even when V3 is changed from V1 to V2.

Abstract: A voltage regulator includes a comparing circuit configured to compare a first voltage reference to a second voltage reference and to generate an output. A first circuit applies gain to the output of the comparing circuit and buffers the output of the comparing circuit. A first transistor includes a gate in communication with an output of the first circuit, a first terminal in communication with a first voltage reference and a second terminal in communication with an output of the voltage regulator. A second circuit applies gain and buffers the output of the first circuit. A latching circuit receives an output of the second circuit. A voltage reference circuit generates the second voltage reference based on the output of the voltage regulator. A reference adjusting circuit receives an output of the latching circuit and selectively adjusts the second voltage reference.

Abstract: An integrated circuit has a semiconductor layer, at least one metal layer, a plurality of functional circuit blocks formed on the semiconductor layer, and a power mesh formed on the at least one metal layer. The power mesh has a specific area corresponding to a specific functional circuit block of the functional circuit blocks. The specific area at least has a first power trunk of a first power source and a second power trunk of a second power source distributed therein.

Abstract: Various embodiments include approaches for controlling a supply voltage or a clock frequency to an integrated circuit (IC). Various additional embodiments include circuitry for controlling a supply voltage or a clock frequency of an IC. In some cases, a method includes: locating a set of temperature sensors on bin locations in an IC; determining temperature bounds of the bin locations in the IC as a function of a determined temperature at the set of temperature sensors; determining timing constraints as a function of supply voltages at the bin locations and the determined temperature at the set of temperature sensors; and determining operational voltage bounds for the IC as a function of the determined temperature at the set of temperature sensors.

Abstract: This invention makes the change in current drawn from the power grid in an integrated circuit gradual by sequencing the power switch chains differently for both power up and power down. During power up, this invention establishes a reasonable connection with the power grid through a series of weak power switches and then starts turning on the strong power switches. During power down, this invention reverses the process. Strong switches are all turned off before turning off the weak switches.

Abstract: A calibration method and apparatus for current and resistance are provided, where the current calibration method includes: injecting at least one portion of a set of predetermined compensation currents into at least one of an output current of a first current source and an output current of a second current source, and dynamically adjusting a distribution of the at least one portion of the set of predetermined compensation currents until two monitored voltage drops are equal to each other, and recording a first compensation current configuration; exchanging the first and second current sources, and dynamically adjusting the distribution of the at least one portion of the set of predetermined compensation currents until the two monitored voltage drops are equal to each other, and recording a second compensation current configuration; and according to the first and second compensation current configurations, generating a resultant compensation current, for use of current compensation.

Abstract: An analog-to-digital conversion device has: an analog-to-digital converter configured to receive an input signal via an input signal node, and convert the input signal to a digital signal; and a control circuit configured to receive the digital signal when the input signal is set to have a fixed value, and change, when a deviation amount of the digital signal with the respect to an expected value is equal to or larger than a threshold value, a value of a capacitor between a power supply potential node and a reference potential node of the analog-to-digital converter and/or values of resistors connected to the power supply potential node and the reference potential node of the analog-to-digital converter.

Abstract: Driver circuits (1) for driving load circuits (2, 3) receive source signals from sources and provide feeding signals to the load circuits (2,3) and charging signals to capacitor circuits (21). These capacitor circuits (21) provide supporting signals to the load circuits (2, 3) in addition to the feeding signals. By providing the driver circuits (1) with control circuits (22) for controlling the supporting signals, the capacitor circuits (21) can become less bulky/costly and/or will limit the lifetime of the driver circuits (1) to a smaller extent. Further, these driver circuits (1) may get improved efficiencies. Said controlling may comprise controlling moments in time at which the supporting signals are offered to the load circuits (2, 3) or not, and/or may comprise controlling sizes of the supporting signals, and/or may be done in response to detection results from detectors (23) for detecting parameters of one or more signals. Said controlling may comprise switching via switches (24).

Abstract: A semiconductor chip package eliminates and minimizes a power noise generated from a voltage generation circuit in the semiconductor chip package includes an integrated circuit chip with a voltage generation circuit that receives an external voltage to generate a supply voltage to be used in an internal circuit and a connection terminal connected to an output node of the voltage generation circuit, and a mounting substrate including a noise eliminator electrically connected to the connection terminal to reduce a power noise of the supply voltage and a mounting substrate to mount the integrated circuit chip to package the integrated circuit chip as the semiconductor chip package.

Abstract: A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second voltage. The second substrate region is coupled to a voltage dividing node that is set in the first resistor.

Abstract: An output driver for electrostatic discharge (ESD) protection includes a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal. The output driver also includes a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.

Abstract: Provided is a readout integrated circuit including a sensor signal processing unit receiving sensor signals from a plurality of sensors and converting respectively the sensor signals into voltage signals, a signal converting unit respectively converting the voltage signals into digital signals, a digital signal processing unit outputting digital signals processed in response to the voltage signals and a switching control signal, a power supplying unit generating an internal voltage for operating the signal converting unit and the digital signal processing unit, and a reference sensing voltage for operating the sensor signal processing unit, and a switch unit operating in response to the switching control signal, wherein the switch unit includes switches respectively corresponding to the plurality of sensors and a current amount applied to each sensor is adjusted in response to operation times of the switches.

Abstract: Provided is a logic circuit that can reduce the variation of a power supply voltage supplied thereto and a semiconductor integrated circuit including the logic circuit. The logic circuit includes a buffer unit, a voltage detection unit, and a switch unit. The buffer unit is connected between a first power supply or a voltage regulator and a second power supply to receive power supply, and outputs a signal having the same or inverted logic level as an input signal to an output terminal. The voltage detection unit detects a voltage at the output terminal and outputs a detection signal based on a detection result. The switch unit connects the buffer unit to the first power supply or the voltage regulator in accordance with the detection signal.

Abstract: A semiconductor device is capable of generating an internal voltage having a voltage level that is dependent on an external power supply voltage. The semiconductor device includes an internal voltage generation unit configured to generate a plurality of internal voltages having different voltage levels by using an external power supply voltage, a voltage level detection unit configured to detect a voltage level of the external power supply voltage, and a selection unit configured to selectively output one of the internal voltages in response to a detection result of the voltage level detection unit.

Abstract: There is provided a regulator circuit capable of increasing the capacity of the output transistor for supplying current, stably generating an internal power supply voltage and adapting to the reduction of a power supply voltage. The regulator circuit includes an output transistor which is supplied with an external power supply voltage and supplies dropped voltage to an internal circuit, a differential amplifier for outputting a gate potential applied to the gate of the output transistor, a reference voltage generating circuit for supplying a reference voltage to the differential amplifier, and a cut-off transistor for turning off the output transistor to stop supplying power to the internal circuit. The output transistor is comprised of a depression NMOS transistor whose threshold voltage is a negative voltage. The regulator circuit further includes substrate potential control means for controlling the substrate potential of the depression NMOS transistor.

Abstract: A semiconductor device includes a normal code generation unit capable of generating a normal code, a test code output unit capable of storing a plurality of preliminary test codes to output a test code in response to a test control signal, and a reference voltage generation unit capable of generating a normal reference voltage in a normal operation mode and generating a test reference voltage in a test operation mode in response to the normal code and the test code.