Abstract: Methods and circuits related to a driving circuit with zero current shutdown are disclosed. In one embodiment, a driving circuit with zero current shutdown can include: a linear regulating circuit that receives an input voltage source, and outputs an output voltage; a start-up circuit having a threshold voltage, the start-up circuit receiving an external enable signal; a first power switch receiving both the output voltage of the linear regulating circuit and the external enable signal, and that generates an internal enable signal, the internal enable signal being configured to drive a logic circuit; when the external enable signal is lower than a threshold voltage, the driving circuit is not effective; when the external enable signal is higher than the threshold voltage, the start-up circuit outputs a first current; and where the output voltage at the first output terminal is generated by the linear regulating circuit based on the first current.

Abstract: A current generator includes first and second current generators and an output current generator. The first current generator has an output for providing a first current, the first current proportional to a difference between a first power supply voltage and a first gate-to-source voltage. The second current generator has an output for providing a second current, the second current proportional to a second gate-to-source voltage. The second gate-to-source voltage is approximately equal to the first gate-to-source voltage. The output current generator provides an output current proportional to a sum of said first current and said second current.

Abstract: In various embodiments, a circuit is provided including a supply terminal, a logic circuit, an inverter and a control transistor which may include a body region, first and second source/drain regions, a gate insulating region having a layer thickness and a gate region. The first source/drain region may be coupled to the supply terminal. The logic circuit may have an internal supply terminal connected to the second source/drain region of the control transistor and a plurality of transistors each having a gate insulating region having a second layer thickness. The inverter input may be coupled to the internal supply terminal of the logic circuit and the output to the gate region of the control transistor. The inverter may include a transistor with a gate insulating region having a third layer thickness substantially equal to the first and second layer thicknesses.

Abstract: Disclosed is a switching voltage regulator circuitry controlled to supply a voltage to at least a portion of an integrated circuit (IC). Information corresponding to a current load for a different power state of at least a portion of the IC is received. The switching voltage regulator circuitry is controlled to adjust the voltage to a different value based at least in part on the received information. Disclosed is a voltage received for a power state of at least a portion of an IC having first logic to perform one or more functions and second logic integrated with the first logic. Information corresponding to a current load for a different power state of at least a portion of the IC is sent from the second logic to voltage regulator control logic to adjust the voltage to a different value.

Abstract: A voltage generator includes: a first pump configured to generate and output a first voltage to a first node in response to a first clock signal; a second pump configured to generate and output a second voltage to a second node in response to the first clock signal; a third pump configured to generate and output a third voltage to the first and second nodes in response to the first clock signal; a first switch configured to deliver the third voltage to the first node in response to a first control signal; and a second switch configured to deliver the third voltage to the second node in response to a second control signal, in which the first pump has a first drivability, the second pump has a second drivability, and the third pump has a third drivability greater than the first and second drivabilities.

Abstract: A semiconductor chip includes an internal voltage generation circuit suitable for generating an internal voltage having a predetermined level, a target internal circuit suitable for performing a predetermined operation using the internal voltage, and a control circuit suitable for checking operating speed of the target internal circuit based on an operation result signal generated from the target internal circuit, and generating the control signal based on the checked operating speed, wherein a voltage level of the internal voltage for target internal circuit is controlled based on the control signal.

Abstract: Described herein is an integrated circuit which comprises: a switching voltage regulator (SVR), having one or more bridge drivers, to provide regulated power supply to a plurality of power domains; and a power control unit (PCU) operable to adjust switching frequencies of the SVR according to states of the plurality of power domains, wherein drive strength or active phase count of the one or more bridge drivers is also adjusted by a logic unit of the SVR when the switching frequencies of the SVR are adjusted.

Abstract: Such a device is disclosed that includes an internal voltage generating circuit generating an internal voltage by lowering an external potential and supplying the generated internal voltage to a power supply line, a switch being connected between a grounding wire to which a ground voltage is supplied and the power supply line, and a one-shot signal generating unit controlling turning on and off of the switch, wherein the one-shot signal generating unit brings the switch into conduction synchronously with start of generating the internal voltage by the internal voltage generating circuit.

Abstract: In an embodiment, a method includes monitoring a temperature of a semiconductor chip and adjusting a supply voltage to the semiconductor chip based on the monitored temperature. The temperature may be monitored by a temperature sensor located on-chip or off-chip. Adjusting the supply voltage includes increasing the supply voltage as a function of the monitored temperature decreasing. The increase to the supply voltage occurs only if the monitored temperature is below a threshold temperature. The supply voltage adjustment is determined by a linear relationship having a negative slope with temperature.

Abstract: The application discloses a voltage regulation method, and a corresponding HPM, chip, and chip system. The method is used to regulate a working voltage of the chip, which includes an AVS module and at least one HPM. The method includes: outputting, by the AVS module, a clock signal to the HPM; generating, by the HPM, a corresponding pulse signal according to the clock signal and at least performing first delaying for the pulse signal to acquire a first actual output value and performing second delaying for the pulse signal to acquire a second actual output value; and fitting, by the AVS module, the first and second actual output values at least according to weights of the first and second actual output values to acquire a fitting output value and determine, by comparing the fitting output value with a predetermined reference value, whether to regulate the working voltage of the chip.

Abstract: Systems and methods for generating internal chip supply bias from high voltage control line inputs are presented. One of a plurality of the high voltage control lines is selected and accordingly internal path switching circuitry is enabled to pass the selected high voltage control line while protecting the associated components from over-stress.

Abstract: High voltage rated isolation capacitors are formed on a face of a primary integrated circuit die. The isolation capacitors AC couple the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitors DC isolate the primary integrated circuit from the second integrated circuit die. Isolated power transfer from the first voltage domain to the second voltage domain is provided through the high voltage rated isolation capacitors with an AC oscillator or PWM generator. The AC oscillator voltage amplitude may be increased for an increase in power through the high voltage rated isolation capacitors, and a larger value capacitor in the second voltage domain may provide for peak current demand from circuits in the second voltage domain.

Abstract: A port current control arrangement, constituted of: a current source arranged to generate a reference current or a predetermined value; an on-chip reference resistor, the generated reference current arranged to produce a reference voltage across the on-chip reference resistor; an on-chip sense resistor, a port current arranged to flow through the on-chip sense resistor and produce a sense voltage across the on-chip sense resistor, wherein the resistance of the on-chip sense resistor exhibits a predetermined relationship with the resistance of the first on-chip reference resistor; and a current control circuit, a first input of the current control circuit arranged to receive the produced reference voltage and a second input of the current control circuit arranged to receive the sense voltage, wherein the current control circuit is arranged to limit the port current to a value responsive to the received reference voltage and the received sense voltage.

Abstract: An integrated circuit includes logic regions and dynamically adjustable voltage controllers. A voltage controller connected to each logic region enables voltage adjustment while the chip is operating. Each voltage controller has a selector device connected to voltage input lines providing different voltages. A voltage sensor connected to the output of the selector device provides a supply voltage to one of the logic regions. A control circuit dynamically monitors the supply voltage, captures and stores a digital representation of the supply voltage during each cycle of a clock, and tracks variations over time, based on operation of the logic regions. When variations in the supply voltage exceed an operational threshold of one of the logic regions, the control circuit submits a request to a central controller. When the central controller grants permission, the control circuit dynamically adjusts the voltage by enabling the selector device to choose a different voltage input line.

Abstract: A self-selected variable power integrated circuit (IC) which maximizes manufacturing yield and reduces system design cost and related methods are disclosed. The method includes determining characteristics of an integrated circuit (IC). The method includes determining a module specific voltage of the IC to meet a designed target frequency and power characteristics, based on the determined IC characteristics. The method includes setting the module specific voltage by using a combination of fuses within the IC.

Abstract: A semiconductor device is capable of generating an internal voltage having a voltage level that is dependent on an external power supply voltage. The semiconductor device includes an internal voltage generation unit configured to generate a plurality of internal voltages having different voltage levels by using an external power supply voltage, a voltage level detection unit configured to detect a voltage level of the external power supply voltage, and a selection unit configured to selectively output one of the internal voltages in response to a detection result of the voltage level detection unit.

Abstract: There is provided a reference voltage generating apparatus including: a reference voltage source, a voltage retaining circuit, a switch and a controller. The reference voltage source generates a reference voltage. The voltage retaining circuit includes a first element circuit and a second element circuit, and the voltage retaining circuit outputs a voltage of a connection node between a first terminal of the first element circuit and a second terminal of the second element circuit. The switch is connected between the connection node and the reference voltage source. The controller controls the reference voltage source and the switch. The first element circuit includes at least a resistance component and the first element circuit is supplied with a first voltage at a third terminal and the second element circuit includes a resistance component and a capacity component and the second element circuit is supplied with a second voltage at a fourth terminal.

Abstract: A pass device configured from a common gate transistor, wherein an input voltage is applied to the source and an output at the drain is applied to a load. The input resistance of the pass device increases as the input voltage is reduced and limits the useful range of the input voltage. Increasing the gate to source voltage (Vgs) by applying a negative voltage to the gate reduces the input resistance and increases the range of operation of the pass device.

Abstract: A particular method includes, prior to issuing a recommendation by an adaptive voltage scaling (AVS) system, performing a first iteration of an AVS operation to sample characteristics of a semiconductor device to determine a first adjustment recommendation. The method further includes performing at least one additional iteration of the AVS operation to determine at least one additional adjustment iteration. When a threshold number of consecutive adjustment recommendations are consistent, the method includes issuing the recommendation by the AVS system.

Abstract: An integrated circuit having a regulator circuit capable of tracking reference voltages is provided. The integrated circuit includes shunt regulator circuitry. The shunt regulator circuitry includes a shunt regulator circuit and a voltage tracking circuit. The shunt regulator circuit has an output on which a regulated voltage is provided. The shunt regulator circuit also provides electrical current to the output when the regulated voltage is outside of a voltage range bounded by first and second reference voltages. The voltage tracking circuit may be coupled to the shunt regulator circuit. The voltage tracking circuit may generate the first and second reference voltages. In one instance, the first voltage is greater than the regulated voltage and the second voltage is less than the regulated voltage.

Abstract: A composite device system including: a first device including a nonvolatile memory; and a second device configured to supply a power to the first device, the second device including: a power supply circuit configured to stabilize a first power supplied from an external part into a second power lower than the first power, and to supply the second power to the first device; a communication circuit configured to receive control data from the first device; and a switch configured to switch between on and off based on the control data, and to supply the first power to the first device when the switch is on, wherein the second device receives the control data from the first device by the communication circuit when data is written into the nonvolatile memory so that the switch is turned on and the first power is supplied to the first device.

Abstract: An integrated circuit (IC) includes an adaptive voltage scaling (AVS) controller configured to control a voltage supplied to a portion of the IC and at least one sensor configured to sense at least one state of the IC and to provide an output signal indicative of the at least one sensed state to the AVS controller, the IC having a first setting and a second setting, the AVS controller being configured to use the output signal to control the voltage in the first setting and the AVS controller being configured to control the voltage independently of the output signal in the second setting. Also a method of performing AVS is provided.

Abstract: A low dropout linear regulator, a starting method, an electronic device, and a chip are provided. The starting method includes the steps of beginning a soft-starting process of the low dropout linear regulator and providing a first current; when an output voltage of the low dropout linear regulator reaches a starting voltage, providing a second current; and dynamically adjusting a threshold of an over current during the soft-starting process of the low dropout linear regulator, wherein the over current includes at least one of the first current and the second current. Through the low dropout linear regulator, the starting method, the electronic device, and the chip, there is short starting time and less overshoot of the output voltage, thereby achieving a fast and safe starting process. Moreover, the circuit is protected, and the usage quality and life is enhanced.

Abstract: An example circuit includes a capacitance circuit, a regulator circuit, and a slew rate control circuit. The capacitance circuit is coupled between a first node and a second node. The regulator circuit is coupled to the capacitance circuit to regulate a supply voltage across the capacitance circuit with a charge current during a normal operation mode of the circuit. The slew rate control circuit is coupled to the capacitance circuit and the regulator circuit. The slew rate control circuit is coupled to lower a slew rate of a change in voltage over change in time between the first and second nodes during a power up mode of the circuit. The slew rate control circuit includes a transistor coupled between the first and second nodes to shunt excess current from the charge current.

Abstract: A system and method to regulate voltage on a chip are described. The system includes a central controller to output a digital code based on a voltage measurement from a sense point on a power grid of the chip. The system also includes a plurality of micro-regulators, each of the plurality of micro-regulators outputting a respective voltage to the power grid based on the digital code.

Abstract: A system and method to regulate voltage on a chip are described. The system includes a central controller to output a digital code based on a voltage measurement from a sense point on a power grid of the chip. The system also includes a plurality of micro-regulators, each of the plurality of micro-regulators outputting a respective voltage to the power grid based on the digital code.

Abstract: An active component of an integrated voltage regulator (IVR) circuit is deployed within an IC device for regulating an operating voltage thereof. An interposer interconnects the IC device with a power source. A passive inductive component of the IVR circuit is deployed upon a surface of the IC device or the interposer. The inductive component has a magnetic core and a winding (e.g., wire-bond), wound about the magnetic core.

Abstract: In various embodiments, a circuit is provided including a supply terminal, a logic circuit, an inverter and a control transistor which may include a body region, first and second source/drain regions, a gate insulating region having a layer thickness and a gate region. The first source/drain region may be coupled to the supply terminal. The logic circuit may have an internal supply terminal connected to the second source/drain region of the control transistor and a plurality of transistors each having a gate insulating region having a second layer thickness. The inverter input may be coupled to the internal supply terminal of the logic circuit and the output to the gate region of the control transistor. The inverter may include a transistor with a gate insulating region having a third layer thickness substantially equal to the first and second layer thicknesses.

Abstract: A microcomputer includes a first switch coupled between a main power supply terminal and a power supply node, and a second switch coupled between an auxiliary power supply terminal and the power supply node. The microcomputer compares a voltage V1 of the main power supply terminal with a reference voltage VR1. When V1>VR1, the microcomputer turns on the first switch and turns off the second switch, and when V1<VR1, the microcomputer turns off the first switch, and turns on/off the second switch to gradually increase a voltage V3 of the power supply node. Thus, the operation of a clock generation circuit driven by V3 can be stable even when V3 is changed from V1 to V2.

Abstract: Example reference current distribution circuitry described herein include current mirrors having resistive elements of varying sizes between gate nodes of sense amplifier transistors along a voltage distribution line. Examples of counter coupling capacitances which may be coupled to the gate nodes of sense amplifier transistors are also described.

Abstract: A multi-chip module (MCM) is disclosed, which in some embodiments can include a packaging substrate, an interposer coupled to the substrate and having a power converter coupled to one or more vias, and a CMOS integrated circuit comprising one or more connecters aligned with and disposed proximate to the one or more vias to electrically couple the interposer to the integrated circuit. Methods of forming a voltage regulator on an interposer of a multi-chip module (MCM) are also provided.

Abstract: An integrated circuit (IC) includes a first power supply node that is arranged to receive a first power supply signal. The IC also includes process detection circuits. Each process detection circuit provides a process detection output signal such that a value associated with the process detection output signal is a function of process variation at a location of the process detection circuit outputting the process detection signal. The IC also includes a processing unit that executes processor-executable instructions to provide at least one voltage control signal, based, at least in part, on the process detection signals. The voltage control signal(s) include a first voltage control signal is associated with a target voltage for the first power supply signal.

Abstract: An internal voltage generation circuit including a drive control signal generator and an internal voltage driver. The drive control signal generator generates a drive control signal in response to an active pulse signal and a drive signal. The internal voltage driver, electrically coupled to the drive control signal generator, divides a level of an internal voltage signal in response to the drive control signal to generate a division voltage signal, compares a level of the division voltage signal with a level of a reference voltage signal to generate the drive signal, and drives the internal voltage signal in response to the drive signal.

Abstract: Method and system for measuring the resistance of a resistive structure having at least three nodes. A first calibration signal is determined by measuring a voltage at an output of the resistance structure when no calibration current is injected into a third node between the first and second nodes of the structure. A calibration current is then injected into the third node and a second calibration signal is determined. The absolute value of the difference between the first calibration signal and the second calibration signal is determined, the absolute value being proportional to a product of the resistance of the resistive structure and the calibration current.

Abstract: An embodiment of a semiconductor integrated circuit, which receives a power supply voltage at an input terminal and outputs a feedback voltage for controlling a level of the power supply voltage, includes a feedback voltage generating unit that generates the feedback voltage corresponding to the level of the power supply voltage at the input terminal. The feedback voltage generating unit includes a variable resistance element. A resistance control unit controls the resistance value of the variable resistance element to account for changes in a desired target level for the power supply voltage.

Abstract: The performance, thermal and power management system is configured to perform DVFS calibration, temperature compensation adjustment, aging calibration, and DC offset calibration in an IC. The initial voltage supplied to the IC may be set to an initial value which takes chip-to-chip process variations into account and then dynamically adjusted according to temperature variations, DC offset and/or aging effects. Therefore, the performance, thermal and power management system may achieve optimized thermal and power performance of the IC.

Abstract: An integrated circuit includes logic regions and dynamically adjustable voltage controllers. A voltage controller connected to each logic region enables voltage adjustment while the chip is operating. Each voltage controller has a selector device connected to voltage input lines providing different voltages. A voltage sensor connected to the output of the selector device provides a supply voltage to one of the logic regions. A control circuit dynamically monitors the supply voltage, captures and stores a digital representation of the supply voltage during each cycle of a clock, and tracks variations over time, based on operation of the logic regions. When variations in the supply voltage exceed an operational threshold of one of the logic regions, the control circuit submits a request to a central controller. When the central controller grants permission, the control circuit dynamically adjusts the voltage by enabling the selector device to choose a different voltage input line.

Abstract: A device that includes at least one current consuming component. The device is characterized by including a compensation circuit adapted to compare between a voltage level at a sensing point within an integrated circuit and between a reference voltage derived from a voltage peak level at the sensing point; and to selectively increase the voltage at the sensing point in response to the comparison. A method for compensating for voltage drops in an integrated circuit, the method includes providing at least a first supply voltage to an integrated circuit; the method is characterized by including: comparing between a voltage level at a sensing point within an integrated circuit to a reference voltage derived from a voltage peak level at the sensing point; and selectively increasing the voltage at the sensing point in response to the comparison.

Abstract: A voltage-current conversion circuit for automatic test equipment (ATE) or a tester converts a low voltage, low current output from a power supply of the tester to a high voltage and/or high current output to be coupled to a device under test (DUT) while maintaining the sense capability of the tester power supply. In some embodiments, the voltage-current conversion circuit is implemented as a current only conversion circuit.

Abstract: Systems and methods for reducing power consumption of a voltage regulator are disclosed. In accordance with one embodiment of the present disclosure a voltage regulator comprises an input node configured to receive a reference voltage and an output node configured to output an output voltage. The output voltage is a function of the reference voltage and a regulating current. The regulator further comprises a proportional to absolute temperature (PTAT) circuit coupled to at least one of the output node and the input node. The PTAT circuit is configured to vary at least one of the reference voltage and the regulating current as a function of temperature.

Abstract: A semiconductor device includes an external voltage detection unit suitable for detecting a voltage level of an external voltage to output an external voltage detection signal based on the detected result, a reference voltage generation unit suitable for generating a reference voltage based on the external voltage, an internal voltage generation unit enabled in response to the external voltage detection signal, suitable for selectively generating a voltage corresponding to the reference voltage as an internal voltage, and an internal voltage control unit suitable for selectively providing a voltage having a target level corresponding to the internal voltage as the internal voltage in response to the external voltage detection signal.

Abstract: A power supply circuit to supply an internal voltage to an output node includes: a pull-up driver, in response to a result obtained by comparing the internal voltage to a first reference voltage, configured to generate the internal voltage from a power supply voltage, a pull-down driver, in response to a result obtained by comparing the internal voltage to a second reference voltage, configured to discharge the internal voltage, a pull-up drive blocking unit configured to block the pull-up driver from being driven, in response to the result obtained by comparing the internal voltage to the second reference voltage, and a pull-down drive blocking unit configured to block the pull-down driver from being driven, in response to the result obtained by comparing the internal voltage to the first reference voltage.

Abstract: The invention provides a device for stabilizing an effective value of an output current of a converter. The device comprises the following: an input to receive an input voltage x of the converter, a memory in which a first set of polynomial coefficients a, b, c; kj is stored, a processor that is coupled to the input and the memory and is set up so as to determine a current correction y as a polynomial function with the stored first set of polynomial coefficients a, b, c; kj as a function of the received input voltage x, and a power stage that is coupled to the processor to receive the current correction y and set up to modify the effective value of the output current as a function of the current correction y.

Abstract: An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a MOSFET is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the MOSFET at higher temperature. In one design, an apparatus includes a control circuit and a gate drive circuit. The control circuit generates at least one control signal having a variable frequency determined based on a sensed temperature of the MOSFET. For example, a clock divider ratio may be determined based on the sensed temperature of the MOSFET, an input clock signal may be divided based on the clock divider ratio to obtain a variable clock signal, and the control signal(s) may be generated based on the variable clock signal. The gate drive circuit generates a bias voltage for the MOSFET based on the control signal(s).

Abstract: A semiconductor device includes a power supply voltage level/slope detection unit configured to detect a level of a power supply voltage and a slope of a power supply voltage curve, and output a power supply voltage level/slope detection signal, a pumping voltage detection unit configured to detect a level of a pumping voltage based on a reference pumping level to output a pumping detection signal, an oscillation signal generation unit configured to generate an oscillation signal in response to the pumping detection signal and the power supply voltage level/slope detection signal, and a pumping unit configured to generate the pumping voltage by performing a charge pumping operation in response to the oscillation signal.

Abstract: A voltage regulator bypass circuit to control bypass of a voltage regulator of an integrated circuit device, the voltage regulator bypass circuit including a first voltage detector, a second voltage detector, and circuit. The first voltage detector to detect that a core circuitry voltage level is above a first threshold and to assert a first detect signal at an output in response to the detection. The second voltage detector to detect that an unregulated supply voltage is above a second threshold and to assert a second detect signal at an output in response to the detection. The circuit having a first input coupled to the output of the first voltage detector and a second input coupled to the output of the second voltage detector, the circuit to bypass the voltage regulator in response the output of the latch being cleared.

Abstract: An integrated circuit supplied by a rail-to-rail power supply voltage includes a multi-level stack voltage generator configured to partition the rail-to-rail power supply voltage into one or more reduced supply voltages each having a voltage value between positive and negative power supply voltages of the rail-to-rail power supply. The reduced supply voltages and the positive and negative power supply voltages being configured in series to form a stack of circuit layers. The integrated circuit further includes a core circuit including core circuit units coupled in a circuit layer or coupled between two or more circuit layers. Each core circuit unit is coupled to at least one of the reduced supply voltages. The core circuit units are coupled in the stack of circuit layers to form a serial connection of core circuit units between the positive power supply voltage and the negative power supply voltage.

Abstract: An output circuit includes a current source and a first MOS transistor coupled in series between a power supply terminal and an output terminal. The first MOS transistor includes a backgate coupled to a drain of the second MOS transistor. The second MOS transistor includes a source coupled to a source of a third MOS transistor. The second MOS transistor includes a source coupled to backgates of the second and third MOS transistors. The backgates of the second and third MOS transistors are in a floating condition.

Abstract: Integrated circuit designs and methods using adaptive dynamic voltage scaling circuits for IC designs that compensate for some of the effects of PVT dependent characteristics on the fabrication of advanced IC's but allow lower margins and provide high die yields, smaller die size, and lower power usage. An inner control loop varies the voltage output of an internal variable voltage regulator powered by an IC circuit voltage, and monitors the operation of a test circuit until it reaches a cross-over point (i.e., either fails to operate or begins to operate) with respect to an essentially identical nearby reference circuit, at which point the IC circuit voltage is adjusted by an outer control circuit to that voltage output level plus a margin.

Abstract: When the conduction state of at least one MOS transistor of a PMOS transistor (P1) and NMOS transistor (N2) is switched to an off state, current which would be applied to the MOS transistor with a conduction state in the off state due to the conduction state becoming the off state is bypassed to a resistor (R3, R4). Due to this, an MOS transistor with a conduction state in the off state being supplied with direct current power as it is can be avoided and the withstand voltage of that MOS transistor does not have to be raised. For this reason, the manufacturing costs of the direct current voltage output circuit (54a) can be kept down. At the same time, the circuit size of the direct current voltage output circuit (54a) can be made smaller.