Abstract: Various embodiments of the present invention provide systems and circuits for processing information through comparison of input signals. For example, various embodiments of the present invention provide differential latch circuits. Such differential latch circuits include an input stage and a latch stage. The input stage provides an interim output that is available during a defined period, and the latch stage is operable to latch the temporary interim output during the defined period using a common clock.

Abstract: A prescaling stage includes bistable circuit in turn including respective master and slave portions inserted between a first and a second voltage reference and feedback connected to each other. Each portion is provided with at least one differential stage supplied by the first voltage reference and connected, by a transistor stage, to the second voltage reference, as well as a differential pair of cross-coupled transistors, supplied by output terminals of the differential stage and connected, by the transistor stage, to the second voltage reference. Advantageously, each master and slave portion includes a degeneration capacitance inserted in correspondence with respective terminals of the transistors of the differential pair.

Abstract: The present invention discloses an analogue-to-digital converter comprising at least two voltage comparator devices. Each of the voltage comparator devices comprises a differential structure of transistors and is arranged for being fed with a same input signal and for generating an own internal voltage reference by means of an imbalance in the differential structure, said two internal voltage references being different. Each voltage comparator is arranged for generating an output signal indicative of a bit position of a digital approximation of the input signal.

Abstract: In particular embodiments, an apparatus includes a first transistor connected at the gate to a first input signal voltage and a second transistor connected at the gate to a second input signal voltage. The apparatus further includes a deactivation element coupled to the transistors, the deactivation element being operable to deactivate the first and second transistors by selectively transmitting a deactivation current to a first terminal of the first transistor and a second terminal of the second transistor thereby raising a voltage on the first and second terminals to a value large enough to deactivate the first and second transistors. In particular embodiments, activating the first or second transistor transmits a signal from the apparatus and deactivating the first and second transistors prevents the signal from being transmitted from the apparatus.

Abstract: There is provided a voltage comparator circuit with even lower power consumption. It comprises an FET Q1, to the gate of which a signal input terminal IN1 is connected, an FET Q2, to the gate of which a signal input terminal IN2 is connected, a bistable circuit, an AND circuit G, and an FET Q11. A pulse signal ?, which becomes a strobe signal for the comparison, is supplied to the bistable circuit, and when the pulse signal ? is at a low level, the logic values of output terminals OUT1 and OUT2 go to a high level, and the output of the AND circuit G becomes high, turning the FET Q11 on. When the pulse signal ? changes to a high level from a low level, input voltages are compared, one of the output terminals OUT1 or OUT2 changes to a low level, corresponding to the value relationship between the drain currents of the FETs Q1 and Q2, and the output of the AND circuit G goes to a low level, turning the FET Q11 off.

Abstract: A circuit is provided that includes a current source, and a compensation circuit to generate a compensation current based on an output voltage of the current source. The circuit further includes a combiner to combine the compensation current with an output current of the current source to substantially cancel a channel-length modulation effect associated with the output current of the current source.

Abstract: A data amplifying circuit for a semiconductor integrated circuit including a controller configured to generate a control signal for adjusting an amplification step in response to a test signal, and a data amplifier configured to amplify an input signal one time or two or more times in response to the control signal and to output an output signal.

Abstract: A comparator apparatus for comparing a first and a second voltage input includes a pair of cross-coupled inverter devices, including a pull up device and a pull down device, with output nodes defined between the pull up and pull down devices. A first switching device is coupled to the first input and a second switching device is coupled to the second input, with control circuitry configured for selective switching between a reset mode and a compare mode. In the reset mode, the first and second voltage inputs are coupled to respective output nodes so as to develop a differential signal thereacross, and the pull down devices in each inverter are isolated from the pull up devices. In the compare mode, the voltage inputs are isolated from the output nodes, and the pull down devices in each inverter are coupled to the pull up devices to latch the output nodes.

Abstract: A high-voltage switch circuit includes an enable control circuit, a feedback circuit, a boosting circuit, and a high voltage switch. The enable control circuit precharges an output node to a set voltage in response to an enable signal. The feedback circuit supplies a feedback voltage to an input node in response to a switch control voltage generated from the output node when the output node is precharged. The boosting circuit boosts the feedback voltage and outputs a boosting voltage to the output node, in response to clock signals, thereby increasing the switch control voltage. The high voltage switch is turned on or off in response to the switch control voltage, and is turned on to receive a high voltage and output the received high voltage. The boosting circuit includes an amplification circuit of a cross-coupled type.

Abstract: A semiconductor memory device includes an over driver for driving a pull-up power line of a bit line sense amplifier by an over driving signal, a normal driver for driving the pull-up power line of the bit line sense amplifier by a normal driving signal, and a driving signal generating circuit, in response to a write signal, for generating a driving signal to drive the over driver for a predetermined interval and thereafter to drive the normal driver.

Abstract: A flip-flop includes a first circuit receiving a clock signal and the first signal and transitioning the first and second output signals to a first level when the clock signal goes to an active level, and a second circuit transitioning the first signal to the first level after the first and second output signals go to the first level. The first circuit transfers first and second input signals to the first and second output terminals from first and second input terminals when the clock signal is at the active level and the first signal is at the first level.

Abstract: A differential comparator is provided. The comparator receiving two differential signals and generating a comparison result represented by an output signal on one of two output terminals respectively on two current paths. The comparator comprises two pairs of latch transistors respectively disposed on the two current paths and two pairs of input transistors respectively disposed on the two current paths, wherein gates of the latch transistors on one of the current paths are commonly coupled to the output terminal between the latch transistors on the other current path, gates of the input transistors on one of the current paths respectively receives an input signal of one of the differential signals and a reference signal of the other differential signal and each of the input transistors is disposed between the output terminal and one of the latch transistors on the current path thereof.

Abstract: A data bus sense amplifier circuit can include a first sense amplifier block configured to provide first amplified signals by sensing inputted signals, a second sense amplifier block configured to provide second amplified signals by sensing the first amplified signals, and a sense amplifier control unit configured to provide first and second enable signals which control activations of the first and second sense amplifier blocks, respectively, wherein the sense amplifier control unit controls the first enable signal to be synchronized with the second enable signal so that the first enable signal is inactivated.

Abstract: The amplifier includes first and second inverters that form a flip-flop. In this flip-flop, an input of first inverter is connected to an output of the second inverter, and an output of the first inverter is connected to an input of the second inverter. Control terminals of at least one transistors (MN1, MN2) of first and second transistor pairs (MP1, MN1 and MP2, MN2) that constitute first and second inverters, respectively, are connected to inputs of first and second inverters through first and second capacitances (C1, C2), respectively. At resetting, inputs (1, 2) and outputs (OUT, OUTB) of first and second inverters are not mutually cross-connected, wherein a reference signal (VR) is supplied in common to inputs (1, 2) of the first and second inverters. The one transistors (MN1, MN2) are diode-connected. Voltage differences between reference signal (VR) and respective control terminals of the one transistors are stored in the first and second capacitances (C1, C2), respectively.

Abstract: A differential current-sensing amplifier includes two inverters, two resistors, a NOR gate, and five switches. The first inverter has a first output; the second inverter has a second output. The first resistor is connected between the first inverter and ground; the second resistor is connected between the second inverter and ground. A current to be sensed is input between the first resistor and the first inverter; a reference current is input between the second resistor and the second inverter. The first switch is connected between the first output and ground, the second switch is connected between the second output and ground, and the third switch is connected between the first and the second inverters and power. The first and the second switches are turned off, and the third switch is turned on, to compare the current to be sensed in relation to the reference current.

Abstract: Sensing circuitry and a method of operating such sensing circuitry are provided. The sensing circuitry has voltage change detection circuitry for detecting a change in voltage on at least one input line and for producing at least one output signal indicative of that change during a sensing stage of operation. The voltage change detection circuitry comprises at least one latch transistor having a body region insulated from a substrate. Further, body biasing circuitry is provided which, prior to the sensing stage of operation, causes a voltage to be applied to the body region that is derived from the voltage on one of said at least one input lines. Then, during the sensing stage of operation, the body biasing circuitry causes the voltage of the body region to float. Such an arrangement enables removal of the history effect that can sometime affect such latch transistors, whilst alleviating power consumption and noise issues that can occur in certain known sensing circuits.

Abstract: A differential output circuit includes a bias circuit connected with a first voltage. An input circuit section includes first and second MOS transistors of a first conductive type, and the first and second MOS transistors are connected with the first voltage through the bias circuit, and gates of the first and second MOS transistors receive a differential input signal. Third and fourth MOS transistors of a second conductive type are connected with the first and second MOS transistors through first and second resistance elements, respectively, and connected with a second voltage. A first connection node between the first MOS transistor and the first resistance element is connected with a gate of the fourth MOS transistor, and a second connection node between the second MOS transistor and the second resistance element is connected with a gate of the third MOS transistor.

Abstract: A sense amplifier-based flip-flop includes a first latch, a second latch, a floating reduction unit, an input signal applying unit, a ground switch and a delay reduction unit. The first latch outputs a signal to a first output terminal pair, and outputs an evaluation signal pair corresponding to an input single pair to the first output terminal pair. The second latch latches the evaluation signal pair and outputs the evaluation signal pair to a second output terminal pair. The floating reduction unit is controlled by signals of the first output terminal pair and is operationally connected between current passing nodes of the first latch to prevent the first output terminal pair from floating. The input signal applying unit is disposed between the current passing nodes and a ground terminal, and receives the input signal pair. The ground switch is disposed between the input signal applying unit and the ground terminal, and is controlled by the clock signal.

Abstract: A Magnetic Random Access Memory (MRAM), in which very little current flows through MTJ elements and very little voltage is applied across them, the MRAM being provided with sense-amplifiers capable of amplifying the potential difference between their corresponding pairs of bit lines at high speed. This is accomplished by a sense amplifier including CMOS inverters cross-connected or connected in loop, a P-channel MOS transistor for shutting the power off during standby, and N-channel MOS transistors for initializing the output of the sense amplifier during standby. A ground terminal of the inverter is connected to a bit line through a transistor of a bit switch, and a ground terminal of the inverter is connected to a bit line through a transistor of a bit switch.

Abstract: Circuits and methods may be improved by using ADCs that compensate for the effect of comparator input offset on comparator decisions. Offset compensation may be implemented in an ADC by using an amplifier section between the input of the ADC and a comparator section of the ADC to amplify the signals supplied to the comparator inputs and thereby reduce the effect of comparator offset on the comparator decision. The comparator section may be an autozeroing comparator section that is capable of performing an offset reduction operation to store offset compensation values at capacitors provided at its inputs. The amplifier section may be an autozeroing amplifier section having one or more amplifier stages that are capable of performing an offset reduction operation to store offset compensation values at capacitors provided at their inputs. Offset compensation may also be implemented using an autozeroing comparator section without a preceding amplifier section.

Abstract: An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL? to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

Abstract: In accordance with some embodiments, a current-balanced logic circuit includes a first sense amplifier, a second sense amplifier, and a current-source transistor which provides bias current to the first and second sense amplifiers. The first and second sense amplifiers are alternately activated by first and second differential clock signals, and when activated convert data received on differential input lines into logical values for storage in respective storage circuits. The storage circuits may be flip-flops, latches, keeper circuits, or other circuits for storing data.

Abstract: In a latch circuit having a bistable pair of cross connected transistors of a first polarity and a third transistor of a second polarity, a current signal greater than a bias current is received at a latch circuit port, amplified with the third transistor, and applied to the latch circuit port. This decreases the time in which the latch circuit port receiving the current signal greater than the bias current reaches a steady state voltage.

Abstract: A sense amplifier circuit for low voltage applications is provided. In one implementation, the sense amplifier circuit includes a reference current generation circuit coupled to a power supply. The reference current generation circuit generates a reference current that varies linearly with respect to changes in voltages of the power supply. The sense amplifier circuit further includes a sensing circuit coupled to the reference current generation circuit. The sensing circuit senses an amplitude of a current based at least on part on the reference current.

Abstract: A sensing amplifier comprising a program cell current sensing circuit, an erase cell current sensing circuit and a latch circuit is provided. Each of the program and erase cell current sensing circuits further comprises a plurality of program/erase memory cells, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor and a fourth PMOS transistor. Wherein, one of the drain/source of the first NMOS transistor is electrically coupled to both the program/erase memory cells and a gate of the third NMOS transistor to form a node. In addition, one of the drain/source of the third NMOS transistor is coupled to the latch circuit. Moreover, the program/erase memory cell provides a program/erase current to the first NMOS transistor. The latch circuit will be driven once the amount of the electric charges accumulated at the node caused by the program/erase current overcomes a threshold voltage of the third NMOS transistor.

Abstract: An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL? to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

Abstract: A sense amplifier circuit includes a first double-gate metal oxide semiconductor field effect transistor (DGMOSFET) having a first gate defining a first input to the circuit, a second gate and an output being coupled to a first output of the circuit and a second DGMOSFET having a first gate defining a second input of the circuit, a second gate connected to the output of the first DGMOSFET and an output connected to the second gate of the first DGMOSFET, the output of the second DGMOSFET being coupled to a second output of the circuit.

Abstract: A flip-flop circuit includes a differential stage coupled to a latch stage. The differential stage comprises cross-coupled dynamic logic and only provides a single output to the latch stage. During an evaluation phase, the state of a data input signal is sensed. Depending upon the state of the data input signal, either an output side or reference side of the differential stage is discharged. Also, during the evaluation phase, the latch stage write port is enabled while feedback is disabled, and the flip flop thereby samples and stores an output signal from the output side of the differential stage. Upon initiation of the next precharge phase, the latch stage write port is disabled and feedback is enabled, thereby retaining its present state. Only a single side of the differential stage is used to drive the latch stage and the differential stage may be implemented in an asymmetric fashion.

Abstract: Returning to FIG. 2, sense circuit 201 represents the circuit that must sense the signaling on an interconnect. NMOS device 202 is always on so that there is a continuous path to ground whenever PMOS driver 204 is on. Since leakage power is an order of magnitude less than static and dynamic power it can be omitted for clarity, although it should be noted that dynamic power increases with respect to line length since the interconnect capacitance increases as line length increases. Static power is due to flow of static current across the two resistances shown in FIG. 2, interconnect resistance 206 and the resistance of transistors 102 and 104 from FIG. 1, represented by the resistance of equivalent NMOS transistor 208 of FIG. 2.

Abstract: A current sense amplifier includes a pair of cross-coupled transistors, each transistor being connected between a respective input signal line and a respective output signal generating node, for amplifying voltage difference between the output signal generating nodes. Additionally, the current sense amplifier may include a constant current circuit connected between the output signal generating nodes and a common node for allowing current to flow between the common node and the output signal generating nodes in response to a bias voltage; and a voltage generating circuit for causing a voltage difference between the output signal generating nodes by being turned on in response to a respective output signal.

Abstract: A differential comparator with improved bit-error rate performance operating with a low supply voltage. The differential comparator includes a first pair of transistors receiving a differential input. A second pair of transistors is coupled to the first pair of transistors. A pair of resistive elements is connected between the first pair and second pair of transistors so as to increase bias currents shared by the first and second pairs of transistors. The increased bias currents reduce a time required by the differential comparator to transition from a meta-stable state to a stable state, thereby improving a bit-error rate of the differential comparator. The resistive elements can use linear resistors or transmission gates. Gates of either the first or second pair of transistors can provide an output.

Abstract: The invention relates to a sense amplifier comprising the following element: a first current mirror unit coupled to a high voltage source, outputting a first current and a second current according to a first reference current, wherein the second current is twice the first current; a second current mirror unit coupled to a high voltage source, outputting a third current according to a second reference current; a first impedor coupled to the second current and a low voltage source; a second impedor coupled to the third current and a low voltage source; a third current mirror coupled to the first, second and third currents, and the first current is regarded as the reference current of the third current mirror unit, thus, the current which flows through the first impedor is the first current, and the current which flows through the second impedor is a fourth current.

Abstract: A differential amplifier circuit has a latch unit and a differential input portion. A minute current is kept to flow through the differential input portion. Therefore, the differential amplifier circuit can accurately amplify even a signal high in speed and small in amplitude.

Abstract: An amplifier circuit includes an amplifier section (700), an equalization section (770), and an activation section (720). The P-channel transistors (702, 704) of the amplifier section are coupled to a supply terminal (802). The N-channel transistors (706, 708) of the amplifier section are coupled between the P-channel transistors and the first and second input terminals (760, 762), respectively. In the activation section, first and second pull down transistors (722, 724) are coupled between the first and second input terminals, respectively, and a second power supply terminal (726), and third pull down transistor between the first and second input terminals. The control gates of the first, second and third pull down transistors are coupled to each other. In operation, a voltage signal applied to the first and second input terminals is amplified by the N-channel transistors. A control signal is then applied to couple the first and second input terminals to a supply voltage.

Abstract: An exposure apparatus including a pulse light source, an exposure unit which exposes a substrate to a pattern with light from the pulse light source, a determination unit which determines necessity of maintenance for the pulse light source based on a pulse rate of the pulse light source within a predetermined period of time, and a decision unit which decides a timing of the maintenance based on a determination result of the determination unit.

Abstract: A circuit for driving a pair of input signals to form driven output signals while reducing the amount of skew between the driven output signals. In one embodiment, a driver circuit includes a first set of drivers connected in series and receiving the first input signal to produce a first output signal; a second set of drivers connected in series and receiving the second input signal to produce a second output signal; a first transmission gate connecting an input of one of the drivers from the first set of drivers to an output of one of the drivers of the second set of inverters; and a second transmission gate connecting an input of one of the drivers from the second set of drivers to an output of one of the drivers of the first set of drivers. Each transmission gate may be provided with a control for enabling or disabling the transmission gate, thereby permitting the selective application of the de-skew function of the circuit and providing for reduced power consumption when the de-skew function is disabled.

Abstract: A sense amplifier latch that is operable to interface with high common-mode input voltages with wide ranges for all process variations. The sense amplifier latch comprises a cross-coupled latch having first and second rail signals; a pre-charge device; an equalization device; pass devices for enabling input devices to receive pad and reference inputs. In the present invention, the input devices comprise push-pull impedance dividers are used to preserve the input difference voltage while dramatically lowering the common-mode output voltage. The outputs of the impedance dividers are fed to the cross-coupled latch of the sense amplifier using n-channel pass gates.

Abstract: Comparator systems are provided that include cross-coupled transistors which respond to a differential network that receives an input signal. The systems further include a control transistor connected across the cross-coupled transistors and a bias network configured to apply a bias voltage to the control transistor that is substantially the voltage across two transistors which are each biased into saturation. It has been found that this bias during the systems' acquire phase substantially stabilizes the systems' gain over variations in their total environment and that this stabilization enhances the systems' performance.

Abstract: A powergating circuit includes a P-channel transistor with a source coupled to VCC, a gate for receiving a first boosted or non-boosted powergating control signal, and a drain forming the internal switched VCC power supply. An N-channel transistor has a source coupled to VSS, a gate for receiving a second boosted or non-boosted powergating control signal, and a drain forming the internal switched VSS power supply. The powergating circuit further includes a circuit for forcing the first and second internal power supply voltages to a mid-point reference voltage during the standby mode.

Abstract: A silicon-on-insulator (SOI) sense amplifier for sensing bit values stored in a memory cell, includes first and second input field effect transistors (FETs), connected to first and second cross-coupled CMOS inverter FET pairs. The input FETs are implemented as floating body FETs, which decreases gate capacitances and increases sense operation speed. History effect problems are minimized as threshold voltage differences are kept small.

Abstract: A method of forming an SRAM cell device includes the following steps. Form pass gate FET transistors and form a pair of vertical pull-down FET transistors with a first common body and a first common source in a silicon layer patterned into parallel islands formed on a planar insulator. Etch down through upper diffusions between cross-coupled inverter FET transistors to form pull-down isolation spaces bisecting the upper strata of pull-up and pull-down drain regions of the pair of vertical pull-down FET transistors, with the isolation spaces reaching down to the common body strata. Form a pair of vertical pull-up FET transistors with a second common body and a second common drain. Then, connect the FET transistors to form an SRAM cell.

Abstract: A high speed, high sensitivity post amplifier as described herein includes a digitally-controlled DC offset cancellation feature. The amplifier circuit is configured to provide DC offset voltage levels in response to a digital control signal, where the digital control signal is generated based upon a data error metric such as bit error rate. The AC signal path and the DC offset adjustment signal path in the amplifier circuit are separated to facilitate operation with normal power supply voltages, and to achieve low power operation.

Abstract: The present invention provides a clock signal input circuit that is able to provide inverse internal clock signals generated by the same input buffer as the address and data signals which exhibit reduced skew. When a skewed external noninverse clock signal and a corresponding external inverse clock signal are passed through respective reference voltage input buffers there is no reduction in skew between the two internal signals. In a preferred embodiment, the invention provides back to back inverters connected to both lines carrying the noninverted and inverted internal clock signals. The slower internal clock signal has an extra inverter driving it when it switches states and the faster internal clock signal has an extra inverter fighting it when it switches states. The skew of the two signals is reduced, allowing for faster operation of the integrated circuit and a reduction in misread data signals.

Abstract: A Negative Bias Temperature Instability (NBTI) tolerant sense amplifier is provided. The sense amplifier includes an input stage having a pair of balanced isolation devices. Each of the balanced isolation devices has an input connected to receive a separate one of a pair of differential input signals. Each of the balanced isolation devices also has a gate that is connected to receive a common bias voltage. The sense amplifier further includes a sense stage connected to the input stage. The sense stage is configured to receive and amplify a higher signal to be provided by the pair of balanced isolation devices. The sense amplifier is also equipped to operate a low voltage levels.

Abstract: A pulse to static converter for SRAM in which the converter latch is comprised of two cross-coupled, complementary, FET pairs. The FETs of each pair are coupled drain to drain between a positive voltage source and ground. The output state of SRAM sense amplifier is coupled as an input to the grates of one FET pair and the state established by this input is latched via the cross coupling with the other FET pair.

Abstract: A flipflop. In the flipflop, a differential pair is coupled to two input signals inverse to each other. A first latch unit is connected to the differential pair in parallel, and includes a first node and a second node coupled to generate complementary latch signals according to the first and second data signals. A signal amplification circuit is coupled to the differential pair and the first latch unit to generate complementary amplified signals according to the complementary latch signals. A second latch unit is coupled to the signal amplifier circuit to generate complementary static output signals according to the complementary amplified signals and to maintain the complementary static output signals.

Abstract: Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.

Abstract: Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.

Abstract: A sense amplifying circuit and a bit comparator having the sense amplifying circuit. The sense amplifying circuit may include a selecting unit, a sensing unit, a latching unit, an output unit, and a switching unit. The selecting unit may select one pair from a first pair of a first signal and a first inverted signal and a second pair of a second signal and a second inverted signal, in response to a selection signal and an inverted selection signal. The sensing unit may sense voltage levels of one pair of signals selected from the first pair and the second pair. The latching unit may precharge first and second nodes in response to a clock signal and controls voltage levels of the first and second nodes in response to a sensing result of the sensing unit. The output unit may invert the voltage levels of the first and second nodes to generate first and second output signals. The switching unit is capable of controlling the operation of the selecting unit in response to the clock signal.

Abstract: An exemplary cascode amplifier circuit comprises a first intrinsic FET, a second intrinsic FET, a third intrinsic FET, and a fourth FET. The first intrinsic FET has a source connected to a target memory cell via a bit line and a drain connected to a first node. The second intrinsic FET has a gate connected to the source of the first intrinsic FET and a source connected to a reference voltage. The second intrinsic FET also has a drain connected at a second node to a gate of the first intrinsic FET. The third intrinsic FET has a source connected to the first node and a gate connected to a supply voltage, and further provides a load across the supply voltage and the first node. The fourth FET has a source connected to the second node and a drain connected to the supply voltage, the fourth FET having a gate connected to an input control voltage.