Abstract: Aspects of embodiments according to the present invention are directed toward a circuitry and a method to accurately measure the junction temperature of power amplifier and uses the measurement to enable optimization of performance in the presence of a mismatched load via control of the power amplifier such that corrective action to mitigate effects of the mismatched load can be performed.

Abstract: A radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage and an RF PA temperature compensating bias transistor of the RF PA stage are disclosed. The RF PA amplifying transistor includes a first array of amplifying transistor elements and a second array of amplifying transistor elements. The RF PA temperature compensating bias transistor provides temperature compensation of bias of the RF PA amplifying transistor. Further, the RF PA temperature compensating bias transistor is located between the first array and the second array. As such, the RF PA temperature compensating bias transistor is thermally coupled to the first array and the second array. The RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.

Abstract: A power control system includes a transmitter having a plurality of gain-adjustable elements, a switchable attenuator located at an output of the transmitter, a gain-adjustable power amplifier coupled to the attenuator, and a power control element responsive to a power target signal, the power control element configured to calculate and apply a gain control signal to the plurality of gain-adjustable elements in the transmitter, to the switchable attenuator, and to the gain-adjustable power amplifier so that a signal to noise ratio (SNR) at the output of the transmitter remains substantially constant over a range of output power.

Abstract: A temperature compensating device for providing active bias for an amplifier includes a voltage source, a plurality of loads, and a current generator for generating a current for the amplifier according to voltages provided by the voltage source and the plurality of loads, wherein a first load of the plurality of loads is a thermistor utilized for keeping the current within a specified range under a plurality of ambient temperatures.

Abstract: An improved regulator circuit, temperature compensation bias circuit, and amplifier circuit are disclosed.

Abstract: In a telemetry system for use in an engine, a circuit structure (34) affixed to a moving part (20) of the engine is disposed for amplifying information sensed about a condition of the part and transmitting the sensed information to a receiver external to the engine. The circuit structure is adapted for the high temperature environment of the engine and includes a differential amplifier (102, 111) having an input for receiving a signal from a sensor (101, 110) disposed on the part. A voltage controlled oscillator (104, 115) with an input coupled to the output of the amplifier produces an oscillatory signal having a frequency representative of the sensed condition. A buffer (105, 116) with an input coupled to the output of the oscillator buffers the oscillatory signal, which is then coupled to an antenna (26) for transmitting the information to the receiver.

Abstract: A temperature compensation circuit includes a bias circuit configured to output a bias current having a current value increasing in proportion to an absolute temperature in a low-temperature region in which a temperature is lower than a predetermined temperature, and having a greater current value than the current value proportional to the absolute temperature in a high-temperature region in which the temperature is equal to or greater than the predetermined temperature, and a transistor having a control terminal supplied with the bias current.

Abstract: A receiver includes an amplifier and a transconductance bias circuit. The amplifier gain is largely determined by transconductance and load impedance. The transconductance bias circuit varies the transconductance in inverse proportion to the load impedance to maintain the gain over process, voltage, and temperature. Differential amplifiers can use separate transconductance bias circuits for each amplifier leg, and the bias circuits can be independently controlled to minimize common-mode gain and voltage offsets.

Abstract: A programmable gain amplifier (PGA) system comprises selectable parallel transconductors in a front end, independently selectable serial amplification circuits in a back end. The back end is configured to receive an output of the front end and may include a plurality of current or voltage mode amplifiers in series. The PGA system also includes control circuitry to select a gain configuration for the PGA by selecting selectable components in the front and back ends. The PGA system may additionally include control circuitry configured to change the transconductance of one or more of the front end transconductors such that the gain configurations of the PGA are independent of variations such as those due to temperature and fabrication. The PGA system may be used between a signal receiver and an analog to digital converter.

Abstract: Disclosed is a CMOS power amplifier. A temperature compensation circuit of a CMOS power amplifier may include: a bias circuit unit supplying a gate bias voltage to a power amplification circuit part; a bias detection unit determining a class type of the power amplification circuit part according to the gate bias voltage; a temperature detection unit detecting a temperature-proportional voltage in proportion to ambient temperature; a temperature compensation control unit generating a compensation control value according to the temperature-proportion voltage in the class type determined by the bias detection unit; and a conversion unit converting the compensation control value of the temperature compensation control unit into a linear bias control value and providing the linear bias control value to the bias circuit unit, wherein the bias circuit unit compensates the gate bias voltage according to the linear bias control value of the conversion unit.

Abstract: According to one embodiment, a variable attenuator is arranged in an input stage, a plurality of transistors are cascaded on the later part of this variable attenuator, temperature sensors are arranged in the vicinity of two or more of the plurality of transistors to detect temperatures, the amount of gain change of the plurality of transistors is calculated from the temperature detection results individually obtained by the temperature sensors, the variable attenuator is controlled in such a manner as to reduce the amount gain change so that the input signal level can be controlled, and thereby the gain that tends to vary in accordance with temperature changes can be stabilized.

Abstract: A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs also may be provided with adjacent FETs electrically isolated.

Abstract: An apparatus for sensing power amplifier current includes a system voltage source that is used to develop a reference voltage, a wire bond structure connected between the system voltage source and a power amplifier, where a sense voltage developed across the wire bond structure is indicative of a current flowing through the power amplifier, and a current source configured to compensate the reference voltage for changes in resistance of the wire bond structure due to a temperature coefficient of the wire bond structure.

Abstract: In a method and apparatus for compensating for gain changes in an amplifier circuit comprising radio-frequency modules and attenuation elements, a radio-frequency module is driven with a first temperature-dependent monitoring voltage UHF(T), and an attenuation element with a second temperature-dependent monitoring voltage UVG(T). The first temperature-dependent monitoring voltage UHF(T) is produced by applying a temperature dependency to an individual monitoring voltage Uopt, which is predetermined for a predetermined temperature for a radio-frequency module, in order to set the optimum operating point of the radio-frequency module. The second temperature-dependent monitoring voltage UVG(T) is produced by applying a temperature dependency to a predetermined monitoring voltage UVG—T for the attenuation element. The monitoring voltage UVG—T is determined in an iteration method, such that the output power of the amplifier circuit reaches a predeterminable level at a constant input power.

Abstract: This disclosure provides systems, methods and apparatus for combining devices deposited on a first substrate, with integrated circuits formed on a second substrate such as a semiconducting substrate or a glass substrate. The first substrate may be a glass substrate. The first substrate may include conductive vias. A power combiner circuit may be deposited on a first side of the first substrate. The power combiner circuit may include passive devices deposited on at least the first side of the first substrate. The integrated circuit may include a power amplifier circuit disposed on and configured for electrical connection with the power combiner circuit, to form a power amplification system. The conductive vias may include thermal vias configured for conducting heat from the power amplification system and/or interconnect vias configured for electrical connection between the power amplification system and a conductor on a second side of the first substrate.

Abstract: Certain embodiments of the invention may be found in a method and system for process, voltage, and temperature (PVT) correction. The method may comprise first determining an input voltage of a transistor coupled in an inphase (I) path of a receiver and an input voltage of a transistor coupled in a quadrature (Q) path of said receiver. An amplifier gain setting may be determined from a lookup table based on at least one of a plurality of parameters related to the first determining. A gain of at least one amplifier in the receiver may be adjusted based on the amplifier gain setting determined from the lookup table.

Abstract: Variable gain amplifiers with controllable gain gradient over temperature. A variable gain amplification circuit comprises an input terminal receiving an input signal, an output terminal outputting an output signal, and a control terminal receiving a first gain control signal. The relationship between gain of the variable gain amplification circuit and temperature is programmable rather than temperature independent, and is controlled by the first gain control signal obtained by a second gain control signal and a third gain control signal.

Abstract: Disclosed is a CMOS power amplifier. A temperature compensation circuit of a CMOS power amplifier may include: a bias circuit unit supplying a gate bias voltage to a power amplification circuit part; a bias detection unit determining a class type of the power amplification circuit part according to the gate bias voltage; a temperature detection unit detecting a temperature-proportional voltage in proportion to ambient temperature; a temperature compensation control unit generating a compensation control value according to the temperature-proportion voltage in the class type determined by the bias detection unit; and a conversion unit converting the compensation control value of the temperature compensation control unit into a linear bias control value and providing the linear bias control value to the bias circuit unit, wherein the bias circuit unit compensates the gate bias voltage according to the linear bias control value of the conversion unit.

Abstract: A bias circuit 12 includes: a transistor Q5 operable to supply, to an amplifier 11, a bias current in accordance with a base current supplied thereto; a transistor Q3 operable to pass a current in accordance with a reference voltage Vref; a transistor Q2 operable to correct, in accordance with the current passed by the transistor Q3, the base current to be supplied to the transistor Q5, so as to compensate a temperature characteristic represented by the transistor Q5; and a bias changing section (of a transistor Q4, and resistances R5, R6, and R7), connected to a base of the transistor Q5, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q5. The amplifier 11 amplifies, by using the bias current supplied by the bias circuit 12, a radio frequency signal having been inputted thereto.

Abstract: Embodiments of the present invention provide systems and methods for automatic amplifier gain profile control, including a method for automatically configuring a variable gain profile amplifier according to received input and a variable gain profile amplification system. Further, embodiments of the present invention provide systems and methods for increased gain profile accuracy, including methods and systems to reduce the effects of temperature and/or process variations on the gain profile of an amplifier.

Abstract: A class-D audio amplifier is protected by thermal regulation which decreases the gain of the class-D audio amplifier by asserting an over-temperature signal when the temperature of the class-D audio amplifier is detected to be higher than a threshold. The output of the class-D audio amplifier is therefore reduced by the smaller gain, and the chance for the class-D audio amplifier to stop working due to overheating is greatly reduced.

Abstract: A circuit and method are provided for reducing dynamic EVM of a power amplifier (PA) used for RF communication. A temperature dependent boost bias signal is applied to the bias input port of amplifier circuitry of the PA in dependence upon a temperature of the amplifier circuitry to compensate for transience in the gain or phase response of the PA while components of the PA is differentially warming-up, advantageously taking into account an actual temperature of the amplifier circuitry.

Abstract: Some embodiments discussed relate to a method and apparatus, comprising a power amplifier module, a transceiver module coupled to provide a signal to an input of the power amplifier module. The transceiver module comprising an integrated temperature sensor to sense an instantaneous operating temperature of the transceiver and providing a first sensor output signal dependent upon the operating temperature, and an integrated voltage sensor to sense a transceiver supply voltage and generate a second sensor output signal dependent upon the instantaneous transceiver supply voltage, and a processor configured to receive the first and the second sensor output signals, provide a control signal to the power amplifier module to reduce the output power of the power amplifier responsive to the first and the second sensor output signals.

Abstract: An amplifier circuit includes an amplifier stage (10) having an amplifier transistor (104) with a gate coupled to an input (100) of the amplifier stage, a source coupled to a reference connection (gnd) and a drain coupled to a positive power supply connection (V+). The amplifier circuit includes a bias stage (12) having a bias transistor (120), a drain resistance (124) and a source resistance (122). The bias transistor includes a gate coupled to a negative power supply connection (V?), a source coupled to the negative power supply connection (V?) via the source resistance and a drain coupled to the reference connection via the drain resistance and to the gate of the amplifier transistor. The bias stage includes a further resistance (20, 22) coupled from a node between the source of the bias transistor and the source resistance of the bias transistor to a circuit node that carries a voltage higher than the voltage at the negative power supply connection.

Abstract: A programmable gain amplifier (PGA) system comprises selectable parallel transconductors in a front end, independently selectable serial amplification circuits in a back end. The back end is configured to receive an output of the front end and may include a plurality of current or voltage mode amplifiers in series. The PGA system also includes control circuitry to select a gain configuration for the PGA by selecting selectable components in the front and back ends. The PGA system may additionally include control circuitry configured to change the transconductance of one or more of the front end transconductors such that the gain configurations of the PGA are independent of variations such as those due to temperature and fabrication. The PGA system may be used between a signal receiver and an analog to digital converter.

Abstract: The present invention relates to a synchronization circuit for an integrated amplifier provided with a bandwidth control in accordance to a bandwidth control signal, wherein said synchronization circuit comprises a control terminal for a control signal and rank selector means connected to an internal control signal and being configured to emboss said internal control signal to said control terminal, if said internal control signal has a higher rank in accordance to a predetermined ranking criteria in comparison to said control signal. Further, the present invention relates to a respective synchronization method for continuously communicating and synchronizing of a common control signal for multiple circuits. One preferred application of the invention is in temperature protection by a synchronized bandwidth control for multiple class-AB amplifiers by means of only one additional terminal pin per amplifier.

Abstract: A power amplifier integrated circuit, which generates an RF output signal by amplifying an RF input signal, includes a thermal-sensing circuit, a feedback circuit, a logic judging circuit, an adjusting circuit, and an amplifying circuit. The thermal-sensing circuit generates a thermal sensing signal according to the operational temperature, and the feedback circuit generates a power compensation circuit according to power variations in the RF output signal. The logic judging circuit outputs a compensation signal according to the thermal sensing signal and the power compensation signal. The adjusting circuit adjusts the level of the RF input signal according to the compensation signal, thereby generating a corresponding 1st stage RF signal. The amplifying circuit can amplify the 1st stage RF signal, thereby generating the corresponding RF output signal.

Abstract: In one embodiment, a method includes generating a first current in a bias current circuit and biasing an amplifier with the first current when the amplifier is operating in a first temperature range, and generating a second current in the bias current circuit and biasing the amplifier with the second current when the amplifier is operating in a second temperature range. These two currents may correspond to different profiles with respect to temperature, to maintain substantial linearity of the amplifier over the temperature ranges.

Abstract: It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage.

Abstract: A Darlington pair amplifier includes a temperature compensation device. In one case, the device is a resistor connected in series between: (a) an intermediate node of two bias resistors for the Darlington pair, and (b) the control terminal of the Darlington pair. In another case, the device is a second, smaller, Darlington pair connected in series with the two bias resistors for the first Darlington pair. In still another case, the device is a combination of: (1) a resistor connected in series between: (a) an intermediate node of the two bias resistors for the Darlington pair, and (b) the control terminal of the Darlington pair; and (2) a second, smaller, Darlington pair connected in series with the two bias resistors for the first Darlington pair.

Abstract: A gain compensation device for adjusting gain of an amplifier over temperature is disclosed. The gain of the amplifier is controlled by signals on a gain control end of the amplifier. The gain compensation device comprises a temperature compensation generator, an adder, and a temperature sensor. The temperature compensation generator is for generating an additional gain parameter according to a reference temperature, a current temperature, and a temperature coefficient. The adder comprises a first input end, coupled to the temperature compensation generator for receiving the additional gain parameter, a second input end for receiving a default gain parameter, and an output end coupled to the gain control end of the amplifier for outputting sum of the additional gain parameter and the default gain parameter. The temperature sensor is for providing the current temperature.

Abstract: A power amplifier integrated circuit, which generates an RF output signal by amplifying an RF input signal, includes a thermal-sensing circuit, a feedback circuit, a logic judging circuit, an adjusting circuit, and an amplifying circuit. The thermal-sensing circuit generates a thermal sensing signal according to the operational temperature, and the feedback circuit generates a power compensation circuit according to power variations in the RF output signal. The logic judging circuit outputs a compensation signal according to the thermal sensing signal and the power compensation signal. The adjusting circuit adjusts the level of the RF input signal according to the compensation signal, thereby generating a corresponding 1st stage RF signal. The amplifying circuit can amplify the 1st stage RF signal, thereby generating the corresponding RF output signal.

Abstract: A thermal sensor at the output of a switching amplifier senses heat dissipation at the output switch. If an overheating condition is sensed, gain of the digital input signal is lowered to reduce output power of the audio output signal.

Abstract: A thermal-electrical assembly (200) provides with improved heat sinking, electrical shielding and electrical grounding. The thermal-electrical assembly is configured using a shield (202) having a windowed aperture (204), a pliable frame (206) formed of thermally and electrically conductive material having contours (210) that fit within and are retained by the windowed aperture, and a thermal insert (208) formed to fit within the pliable frame. The combination of pliable frame 206 and thermal insert (208) close off the shield (202) while providing contact areas for dissipating heat from heat generating circuitry or components. Communication devices, such as portable radios having tight space constraints, can incorporate the thermal-electrical assembly (200) to minimize electrical emissions while maximizing heat dissipation.

Abstract: The present invention discloses a cryogenic receiving amplifier using a gallium nitride high electron mobility transistor (GaN HEMT) as an amplifying device in a cryogenic temperature environment. The cryogenic receiving amplifier includes an input matching circuit which makes an impedance matching between a gate of the amplifying device and an outside of an input terminal, a gate biasing circuit which applies a DC voltage to the gate of the amplifying device, an output matching circuit which makes an impedance matching between a drain of the amplifying device and an outside of an output terminal, and a drain biasing circuit which applies a DC voltage to the drain of the amplifying device. The cooled temperature is preferably set to 150 K or below, and the GaN HEMT may be illuminated with light of a blue LED.

Abstract: A CMOS receiver system having a tunable receiver having a tunable gain and a bandwidth system is provided. The tunable receiver includes means for receiving input signals; and a control circuit controlled by a control signal for tuning at least one of the gain and the bandwidth of the tunable receiver, wherein the control signal is indicative of a data rate of the input signals. Furthermore, a method is provided for tuning a CMOS receiver receiving input signals. The method includes the steps of receiving at least one control signal, and controlling one of gain and bandwidth of the CMOS receiver in accordance with the at least one control signal, wherein the at least one control signal is indicative of a data rate of the received input signals.

Abstract: A bias circuit operable to supply a bias current to a first transistor includes: a second transistor having a collector terminal connected to a first power supply; a first resistance element having one end connected to an emitter terminal of the second transistor and having the other end connected to a base terminal of the first transistor; a second resistance element having one end connected to the emitter terminal of the second transistor and having the other end connected to ground potential; at least one third resistance element provided between a base terminal of the second transistor and a second power supply; and a plurality of temperature compensation circuits connected to the base terminal of the second transistor which are operable to control a base potential of the second transistor so that the potential falls as a temperature rises.

Abstract: A system and method for dynamic adjustment of drain or collector voltage of a power amplifier (PA), including a PA having a voltage input, a temperature sensor measuring ambient temperature of the PA, and an adaptive PA control processor that dynamically changes the input voltage based on the ambient temperature, achieving a desired peak power when the system is subjected to high temperatures. In a further embodiment, a power sensor measures output power of the PA, and the control processor dynamically changes the voltage based on output power when the system serves a large cell in a mobile communication infrastructure employing high power. In a further embodiment, a multistage PA and method include amplifier stages having drain or collector voltage inputs, wherein a voltage applied to the inputs are set so as to be proportional to the peak power requirements of each stage, enhancing overall efficiency.

Abstract: A reference current bias circuit includes a self-bias circuit configured to provide a bias current to an amplifier; a basic bandgap circuit coupled to inputs of the amplifier; a startup circuit configured to support an initial operation of the amplifier; a temperature compensator configured to include a first mirroring unit for mirroring current according to a positive temperature coefficient characteristic from the basic bandgap circuit; and a second mirroring unit for mirroring current according to a negative temperature coefficient characteristic from the basic bandgap circuit, and to provide a reference current by combining the current of the first mirroring unit and the current of the second mirroring unit; and a reference current mirroring unit configured to generate reference current biases based on the reference current from the temperature compensator.

Abstract: A bias circuit including: a first current source which generates a first current; a second current source which generates a second current having a temperature-to-output current characteristic that an output current characteristic increases or decreases with a change in temperature to intersect with that of the first current; a first current-voltage conversion circuit which converts the first current to a first voltage; a second current-voltage conversion circuit which has an input terminal and converts a current inputted into the input terminal to a second voltage; a comparison circuit which compares the first voltage and the second voltage and generates a third current according to a result of the comparison; an addition unit which adds the third current to the second current and inputs a resulting current to the input terminal; and a voltage-current conversion circuit which converts the second voltage to a fourth current for bias.

Abstract: A bias circuit 12 includes: a transistor Q5 operable to supply, to an amplifier 11, a bias current in accordance with a base current supplied thereto; a transistor Q3 operable to pass a current in accordance with a reference voltage Vref; a transistor Q2 operable to correct, in accordance with the current passed by the transistor Q3, the base current to be supplied to the transistor Q5, so as to compensate a temperature characteristic represented by the transistor Q5; and a bias changing section (of a transistor Q4, and resistances R5, R6, and R7), connected to a base of the transistor Q5, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q5. The amplifier 11 amplifies, by using the bias current supplied by the bias circuit 12, a radio frequency signal having been inputted thereto.

Abstract: A buffer amplifier has high input impedance and is less affected by temperature by supplying independent bias power to each of amplification units. The buffer amplifier includes a bias supply unit supplying bias power having a preset voltage level, an amplification unit receiving preset driving power and the bias power from the bias supply unit to amplify an input signal, and a compensation unit compensating for current unbalance of the driving power supplied to the amplification unit.

Abstract: A wave detector circuit includes: a first transistor having its base and collector connected together, the first transistor receiving an AC signal and a reference voltage at its base and collector; a second transistor having its base connected to the base of the first transistor through a resistor, the second transistor outputting a detected voltage at its collector; and a diode-connected temperature compensation transistor connected between ground potential and the base and the collector of the first transistor.

Abstract: A temperature compensation system for compensating a collector-voltage controlled RF amplifier. To overcome variation that occurs with temperature which can result in signal degradation of the adjacent channel spectrum, a temperature compensated current is utilized to create an offset signal. The offset signal is processed in connection with a control or data signal to generate a temperature compensated voltage source control signal. A differential amplifier may process the data or control signal and the offset signal. The compensated voltage control signal tracks temperature to adapt the applied collector voltage to temperature. This in turn forces the applied collector voltage to vary in response to temperature changes thereby maintaining a constant output power or RF swing. One example environment of use is in an EDGE type GSM system.

Abstract: A tuner down-converts a Radio Frequency (RF) wireless signal and outputs the converted signal. The tuner compensates for a TOP depending on a temperature and: detects a received signal strength depending on a RF output of the tuner and transmitting the detected strength to a gain control unit; measures an operating temperature of the tuner and transmits the measured temperature value; receives the measured temperature value to compare the received temperature value with a reference TOP value, compensating compensates for the TOP value depending on variation in temperature and outputting outputs the compensated value; and receives the compensated value to control the RF output based on the TOP value and the received signal strength.

Abstract: A variable gain power amplifier includes a power amplifying unit and a signal generating unit. The power amplifying unit includes a control terminal, and a gain of the power amplifying unit is variable by a control signal provided through the control terminal. The signal generating unit generates the control signal to be provided to the control terminal. The signal generating unit includes a switching circuit to be turned on and off by a binary signal, a constant current source that generates a constant current, and a variable current source that generates a variable current. Also, the signal generating unit generates, when the switching circuit is on, a control signal of a magnitude that turns on the power amplifying unit and depends on a magnitude of a sum of the constant current and the variable current. When the switching circuit is off, the signal generating unit generates a control signal of a magnitude that turns off the power amplifying unit.

Abstract: A power amplifier negates a memory effect and is applied a linearizer using a digital predistortion system even in an inexpensive device. The power amplifier compares an input signal power against a sampled component of an output power, and provides predistortion to the input signal power so as to minimize a difference as a result of the comparison. The power amplifier comprises a gain lookup table storing a gain coefficient value corresponding to a temperature address determined for an input power; a phase lookup table storing a phase coefficient value corresponding to the temperature address determined for the input power; a transversal filter, which is input with the input power, and which outputs the temperature address; and a coefficient multiplier modulating the input signal using a gain coefficient value and a phase coefficient value, which correspond to the temperature address and which are read out from the gain coefficient lookup table and the phase lookup table.

Abstract: An apparatus for a High Power Amplifier (HPA) in a wireless communication system is provided. In one example, the apparatus includes a temperature sensor for determining temperature, a controller for receiving the determined temperature and for controlling a gate bias voltage corresponding to the determined temperature and an amplifier for amplifying a Radio Frequency (RF) signal by using the controlled gate bias voltage.

Abstract: A method, apparatus, and electronic device for using digital predistortion are disclosed. A transmitter 212 may transmits a transmission signal. A receiver 214 may monitor the transmission signal to execute digital predistortion of the transmission signal to compensate for distortion. A field programmable gate array or application specific integrated circuit 226 may adjust a power amplifier bias to improve the digital predistortion.

Abstract: There is provided a feed-forward amplifier which enables a predistortion circuit to obtain sufficient distortion compensation effects even if ambient temperature or the like changes.