Semiconductor Type (e.g., With Semiconductor Diode) Patents (Class 330/4.9)
  • Patent number: 10158030
    Abstract: A tunable capacitor may include a first terminal having a first semiconductor component with a first polarity. The tunable capacitor may also include a second terminal having a second semiconductor component with a second polarity. The second component may be adjacent to the first semiconductor component. The tunable capacitor may further include a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: December 18, 2018
    Assignee: QUALCOMM Incorporated
    Inventors: Shiqun Gu, Gengming Tao, Richard Hammond, Ranadeep Dutta, Matthew Michael Nowak, Francesco Carobolante
  • Patent number: 9916925
    Abstract: A wireless power receiver includes a receiver resonator configured to be coupled to a source resonator to receive a power from the source resonator, the receiver resonator comprising: a planar dielectric layer; an antenna patterned in the form of a loop on the dielectric layer or arranged in the shape of a ring in the exterior of the dielectric layer; and a meta-structure separated from the antenna and arranged on the dielectric layer within the antenna, wherein the meta-structure is configured to reinforce at least one of the electric fields and magnetic fields that are formed in the receiver resonator.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: March 13, 2018
    Assignee: SOONGSIL UNIVERSITY-INDUSTRY COOPERATION FOUNDATION
    Inventors: Chul Hun Seo, Chongmin Lee
  • Patent number: 9472685
    Abstract: The present invention is a method by which diodes are connecting in a circuit such that they are more robust. The method involves placing two diodes of opposite directions in parallel and applying a DC bias such that a forward diode may then handle higher than normal voltages and a reverse diode provides a failsafe in the event of a reverse bias.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: October 18, 2016
    Inventor: Joshua D. Kaggie
  • Patent number: 9264034
    Abstract: Various example embodiments are directed to methods and circuits for mitigation of on-resistance variation and signal attenuation in transistors due to body effects. In some embodiments, an apparatus includes a transistor configured to provide a data signal from a first one of the source or the drain to the other one of the source or the drain in response to a control signal provided to the gate. A body bias circuit is configured to bias the body of the transistor based on a voltage of the data signal to reduce variation in the on-resistance exhibited by the first transistor. In an embodiment, the apparatus includes body bias transistors and switches and the gates of the body bias transistors are connected to protect the body bias transistors from the effects of electrostatic discharge (ESD) events.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: February 16, 2016
    Assignee: NXP B.V.
    Inventor: Jong Koo Kim
  • Patent number: 8045807
    Abstract: A pattern edge detecting method includes: detecting edge points in an image of an inspection pattern acquired from an imaging device; generating a plurality of edge lines from the edge points using a grouping process; generating a plurality of edge line group pairs, each composed of a combination of first and second edge line groups to be a candidate of any of one and the other of an outside edge and an inside edge of the inspection pattern, the generated edge lines being divided into two parts in different manners; performing shape matching between the first and second edge line groups for each edge line group pair; and specifying, as an edge of the inspection pattern, one of the first and second edge line groups constituting the edge line group pair whose matching score is best of matching scores of the edge line group pairs obtained during the shape matching.
    Type: Grant
    Filed: September 22, 2009
    Date of Patent: October 25, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tadashi Mitsui
  • Patent number: 8040586
    Abstract: One exemplary metamaterial is formed from a plurality of individual unit cells, at least a portion of which have a different permeability than others. The plurality of individual unit cells are arranged to provide a metamaterial having a gradient index along at least one axis. Such metamaterials can be used to form lenses, for example.
    Type: Grant
    Filed: April 15, 2009
    Date of Patent: October 18, 2011
    Assignee: The Regents of the University of California
    Inventors: David R. Smith, David Schurig, Anthony F. Starr, Jack J. Mock
  • Patent number: 7990210
    Abstract: An amplifier is provided which includes: a first variable capacitance device of which capacitance is variable, a second variable capacitance device of which capacitance is variable, electrically connected to the first variable capacitance device, and of an inverse conductivity type from the first variable capacitance device, and a first input unit for selectively inputting a bias voltage and a voltage signal to the first variable capacitance device and the second variable capacitance device, wherein, in the event that the bias voltage and the voltage signal are input to the first variable capacitance device and the second variable capacitance device, the capacitance of the first variable capacitance device and the second variable capacitance device is taken as a first value, and wherein the voltage signal is amplified with the capacitance of the first variable capacitance device and the second variable capacitance device as a second value smaller than the first value.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: August 2, 2011
    Assignee: Sony Corporation
    Inventors: Sachio Iida, Atsushi Yoshizawa
  • Patent number: 7911257
    Abstract: A circuit includes an input terminal adapted to receive an input voltage, a MOSFET having its drain terminal and its source terminal connected together, a first switching arrangement configured to be controlled by a first clock signal and adapted to selectively couple the gate terminal to the input terminal, and a further switching arrangement configured to be controlled by a further clock signal in timing relationship with the first clock signal and adapted to selectively couple the source terminal and a first voltage which is capable of pulling carriers out of a channel when the first switching arrangement is not coupling the input terminal to the gate terminal.
    Type: Grant
    Filed: April 10, 2009
    Date of Patent: March 22, 2011
    Assignee: The Trustees of Columbia University in the city of New York
    Inventors: Yannis Tsividis, Sanjeev Ranganathan
  • Publication number: 20100117650
    Abstract: A two port parametric amplifier has a first port that receives an input signal to be amplified and upconverted and a second port that receives a local oscillator signal. The amplified upconverted input signal is emitted as an output at upper and lower sideband frequencies. The amplifier further has a pair of varactor diodes connected between the first port and the second port. The diodes are connected in parallel from the first port and in series from the second port.
    Type: Application
    Filed: November 5, 2009
    Publication date: May 13, 2010
    Inventors: Peter Cork, Sebastian Martius, Markus Vester
  • Patent number: 7649958
    Abstract: Disclosed is a method and apparatus for amplitude modulation of an RF transmit signal using pulse width modulation to control an amount of energy within each period. The apparatus includes a signal processing circuit with an input port for receiving of information indicative of a carrier frequency and modulation data. The signal processing circuit has a first output port and a second output port for providing of output signals having a phase relationship therebetween. A power amplifier is provided for receiving the output signals and for generating a pulse width modulated signal in dependence thereon.
    Type: Grant
    Filed: June 25, 2004
    Date of Patent: January 19, 2010
    Assignee: SiGe Semiconductor (Europe) Limited
    Inventors: Philip Macphail, Jeremy Loraine
  • Publication number: 20090219086
    Abstract: An amplifier is provided which includes: a first variable capacitance device of which capacitance is variable, a second variable capacitance device of which capacitance is variable, electrically connected to the first variable capacitance device, and of an inverse conductivity type from the first variable capacitance device, and a first input unit for selectively inputting a bias voltage and a voltage signal to the first variable capacitance device and the second variable capacitance device, wherein, in the event that the bias voltage and the voltage signal are input to the first variable capacitance device and the second variable capacitance device, the capacitance of the first variable capacitance device and the second variable capacitance device is taken as a first value, and wherein the voltage signal is amplified with the capacitance of the first variable capacitance device and the second variable capacitance device as a second value smaller than the first value.
    Type: Application
    Filed: September 4, 2007
    Publication date: September 3, 2009
    Applicant: SONY CORPORATION
    Inventors: Sachio Iida, Atsushi Yoshizawa
  • Patent number: 6611168
    Abstract: A micromachined variable capacitor structure is used as a modulation mechanism for a differential parametric amplifier. The capacitance of the capacitor structure is modulated by a control signal while a differential signal is applied to the capacitor structure. Modulation of the capacitance produces a signal representative of the input differential voltage. This signal is provided to an amplifier. Once the signal is amplified, a demodulator demodulates the amplified signal to provide an amplified version of the differential signal. The variable capacitor structure also allows for internal feedback, which permits the parametric amplifier to be used as a galvanically isolated differential measurement amplifier. A number of techniques are used to remove common mode and other errors from the modulated difference signal, thereby eliminating them from the amplified output.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: August 26, 2003
    Assignee: Analog Devices, Inc.
    Inventors: Timothy J. Denison, Thomas W. Kelly
  • Patent number: 6265934
    Abstract: A Q-switched parametric cavity microwave amplifier has input and output ports for receiving an input signal and producing a switched amplified output signal. A pump signal, preferably at a harmonic of the input signal, is received through a pump signal port and provided to a pump signal cavity within a housing. The pump signal interacts with a non-linear medium to produce carriers. A frequency selective layer reflects the pump signal but permits the input signal to pass therethrough. The input signal interacts with the carriers produced in the non-linear medium to enhance the signal present within the resonant cavity for the input signal. This transfers energy from the pump signal to the lower frequency input signal. A Q-switch is positioned in series with the output waveguide to cause energy to be stored within the input signal cavity. When the Q-switch is opened, a pulse is produced representing an amplified version of the input signal.
    Type: Grant
    Filed: December 16, 1999
    Date of Patent: July 24, 2001
    Assignee: Lockheed Martin Corporation
    Inventor: James Richard Wood