Abstract: A filter includes one or a plurality of parallel resonators coupled in parallel and one or a plurality of a film bulk acoustic resonators coupled in series, the film bulk acoustic resonator having a substrate, a lower electrode, a piezoelectric membrane, and an upper electrode, wherein: at least one of the lower electrode and the upper electrode has a thick membrane region having a thickness larger than that of a center portion of a resonance region at an edge of the resonance region, the resonance region being a region where the lower electrode and the upper electrode face with each other through the piezoelectric membrane; and a width of the thick membrane region is smaller than a wavelength of an acoustic wave propagating in a direction crossing a thickness direction of the piezoelectric membrane.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.

Abstract: A resonator element includes a piezoelectric substrate including a vibrating section and a thick section having a thickness larger than that of the vibrating section. The thick section includes a first thick section provided along a first outer edge of the vibrating section, a second thick section provided along a second outer edge, and a third thick section provided along a third outer edge. A first inclined outer edge section that is inclined with respect to both of an X axis direction and a Z? axis direction is provided in a corner section of the piezoelectric substrate where the second thick section and the third thick section are connected to each other.

Abstract: A bulk acoustic wave (BAW) resonator device includes an acoustic reflector formed over a substrate and a resonator stack formed over the acoustic reflector. The acoustic reflector includes multiple acoustic impedance layers. The resonator stack includes a first electrode formed over the acoustic reflector, a piezoelectric layer formed over the first electrode, and a second electrode formed over the piezoelectric layer. A bridge is formed within one of the acoustic reflector and the resonator stack.

Abstract: System and method for a microelectromechanical system (MEMS) is disclosed. A preferred embodiment comprises a first anchor region, a vibrating MEMS structure fixed to the first anchor region, a first electrode adjacent the vibrating MEMS structure, a second electrode adjacent the vibrating MEMS structure wherein the vibrating MEMS structure is arranged between the first and the second electrode.

Abstract: A resonator element includes a piezoelectric substrate that includes a vibration portion, and a thick portion which is integrally formed with an outer edge excluding a partial outer edge in an outer edge of the vibration portion and which is thicker than the vibration portion, and a pair of excitation electrodes that are respectively provided on a first main surface and a second main surface of a vibration region which are in front and rear relationships. In addition, the piezoelectric substrate includes first and second beam portions that are provided along a fourth side of the vibration portion.

Abstract: A filter includes: a plurality of piezoelectric thin film resonators, each having a multilayered film including a lower electrode located on a substrate, a piezoelectric film located on the lower electrode, and an upper electrode located on the piezoelectric film so as to face the lower electrode, wherein at least two piezoelectric thin film resonators have thick film portions, in each of which the multilayered film is thicker in at least a part of an outer peripheral portion than in an inner portion of a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, and lengths of the thick film portions from edges of the resonance regions are different from each other in the at least two piezoelectric thin film resonators.

Abstract: Provided is a Fingerprint sensor using Acoustic Impediography. The sensor includes an Application Specific Integrated Circuit (ASIC or IC) and an array of mechanical resonator used as sensing elements. The array of sensing elements contains multiple sensing elements arranged in rows and columns.

Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.

Abstract: A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

Abstract: A microelectromechanical (MEM) resonator includes a resonant cavity disposed in a first layer of a first solid material disposed on a substrate and a first plurality of reflectors disposed in the first layer in a first direction with respect to the resonant cavity and to each other. Each of the first plurality of reflectors comprises an outer layer of a second solid material and an inner layer of a third solid material. The inner layer of each of the first plurality of reflectors is adjacent in the first direction to the outer layer of each reflector and to either the outer layer of an adjacent reflector or the resonant cavity.

Abstract: A duplexer has an antenna terminal, a first terminal, and second terminals and provided with a first filter arranged between the antenna terminal and first terminal and including a parallel resonator for forming a ladder type filter circuit, a second filter arranged between the antenna terminal and the second terminal and having a passband higher than a passband of the first filter, and an electromagnetic coupling element arranged between the parallel resonator of the first filter and a ground part and electromagnetically coupled with the antenna terminal.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film provided on the substrate; a lower electrode and an upper electrode that sandwich at least a part of the piezoelectric film and face with each other; and an inserted film that is inserted in the piezoelectric film, is provided on an outer circumference region in a resonance region in which the lower electrode and the upper electrode sandwich the piezoelectric film and face with each other, is not provided in a center region of the resonance region, and has a cutout in the resonance region.

Abstract: A piezoelectric thin-film resonator includes, a substrate, a piezoelectric film provided on the substrate, and a lower electrode and an upper electrode that face each other through the piezoelectric film. The piezoelectric film has an air space that is provided in at least part of an outer circumferential part of a resonance region in which the upper and lower electrodes face each other through the piezoelectric film and is not provided in a central part of the resonance region.

Abstract: A piezoelectric thin film resonator includes: a piezoelectric film provided on a substrate; a lower electrode and an upper electrode sandwiching at least a part of the piezoelectric film and facing with each other; and an inserted film that is inserted in the piezoelectric film, is provided in an outer circumference region of a resonance region and is not provided in a center region of the resonance region, wherein: an angle between an edge face of the lower electrode and a lower face of the lower electrode in the resonance region is an acute angle; and a width of the inserted film in the resonance region on a side for extracting the upper electrode from the resonance region is larger than another width of the inserted film in the resonance region on a side for extracting the lower electrode from the resonance region.

Abstract: An acoustic wave device including: a substrate; a piezoelectric film formed on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a mass loading film having a first pattern and a second pattern in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the first pattern having portions and the second pattern having portions interlinking the portions of the first pattern.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensated bulk acoustic wave devices. In some embodiments, temperature compensated bulk acoustic wave devices are described with an over-moded reflector layer.

Abstract: A method for manufacturing piezoelectric resonator devices according to the present invention includes the following steps: a wafer forming step of preparing a thick-walled wafer 30 integrally formed with multiple lower lid members 3; a bonding step of bonding crystal resonator plates 2 to one main surface 31 of the wafer 30 via a bonding material 5 and bonding upper lid members 4 on the crystal resonator plates via a bonding material 5; a thinning step of thinning the wafer 30 from the other main surface 37 of the wafer; an external terminal forming step of forming external terminals on the other main surface of the thinned wafer; and a dividing step of cutting the wafer between each adjacent pair of crystal resonators so that multiple crystal resonators are obtained.

Abstract: A bulk wave resonator that includes an aluminum nitride film containing scandium on a substrate, a first electrode disposed on one surface of the aluminum nitride film containing scandium, and a second electrode disposed on the other surface of the aluminum nitride film containing scandium. The aluminum nitride film containing scandium includes a portion acoustically isolated from a top surface of the substrate. The first electrode overlaps the second electrode with the aluminum nitride film containing scandium interposed therebetween. The overlap forms a piezoelectric vibrating portion. The scandium content of the aluminum nitride film containing scandium is 5 atomic percent or more and 43 atomic percent or less when Sc and Al of the aluminum nitride film containing scandium constitute 100 atomic percent.

Abstract: An elastic wave filter device has a center frequency of a reception frequency band. A plurality of parallel arms are connected to a portion of a series arm on a second signal terminal side of a portion in which a first series-arm resonator is provided. Series-arm resonators among the plurality of series-arm resonators other than the first series-arm resonator include a series-arm resonator having a resonant frequency higher than the resonant frequency of the first series-arm resonator. The resonant frequency of the first series-arm resonator is equal to the reception frequency band.

Abstract: Film bulk acoustic resonators (FBARs) having frame elements and filters including the resonators are described.

Abstract: A superlattice crystal resonator having a substrate of a dielectric acoustic superlattice material, both sides of which substrate are plated with electrodes. The resonator can be a one-port resonator if the electrode on both sides is a single electrode, or it can be a two-port resonator if the electrode on one side is a single electrode and the electrode on the other side is a bipolar electrode. The superlattice crystal resonator can be used as a superlattice crystal filter, either in the form of a monolithic superlattice crystal filter formed by a two-port superlattice crystal filter, or in the form of a combined superlattice crystal filter where a number of one-port superlattice crystal resonators are interconnected in various circuitry configurations with or without other electronic components, such as capacitors, inductors, and resisters.

Abstract: A bulk acoustic wave (BAW) resonator is constructed to reduce phase and amplitude ripples in a frequency response. The BAW resonator is fabricated on a substrate 400 ?m thick or less, preferably approximately 325 ?m, having a first side and a polished second side with a peak-to-peak roughness of approximately 1000 A. A Bragg mirror having alternate layers of a high acoustic impedance material, such as tungsten, and a low acoustic impedance material is fabricated on the first side of the substrate. A BAW resonator is fabricated on the Bragg mirror. A lossy material, such as epoxy, coats the second side of the substrate opposite the first side. The lossy material has an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high acoustic impedance material.

Abstract: The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.

Abstract: An acoustic resonator structure comprises a substrate having a trench, a conductive pattern formed in the trench, a pillar formed within the trench, and an acoustic resonator supported at a central location by the pillar and suspended over the trench.

Abstract: A vibrator includes a base substrate, a tuning fork type vibrating body, a first vibrating body, a second vibrating body, a first extraction electrode at the one vibration arm portion, a second extraction electrode at the other vibration arm portion, and an input/output port at the base portion. The input/output port is configured to input/output an electric signal to/from each of the first extraction electrode, the second extraction electrode, and the excitation electrodes of the vibration arm portions. The tuning fork type vibrating body is configured to generate a flexural vibration in reverse phase to the contour vibration of the first and second vibrating bodies, so as to absorb the contour vibration of the first and second vibrating bodies.

Abstract: A filter device including an input electronic circuit having an input load admittance Yin, an output electronic circuit having an output load admittance Yout, a lattice filter with two types of two piezoelectric resonators having a characteristic impedance Zc; those of the first type have a resonant frequency Fr1 and an antiresonant frequency Fa1; those of the second type have a resonant frequency Fr2 different from Fr1 and an antiresonant frequency Fa2 different from Fa1. The input and output impedances are matched to the reciprocal of the real part Re{Yin} of the admittance Yin and the reciprocal of the real part Re{Yout} of the admittance Yout, which are at least two to five times greater than the characteristic impedance Zc of the resonators. The frequency differences Fa1?Fr1 and Fa2?Fr2 are at least two to three times greater than the absolute value of the difference Fr1?Fr2.

Abstract: An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator.

Abstract: A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures.

Abstract: A bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (BN); and a second electrode disposed over the first piezoelectric layer.

Abstract: Inertial sensor having a body with first and second cavities on opposite sides thereof, a sensing element in the first cavity, electronic circuitry in the second cavity, electrical conductors interconnecting the sensing element and the circuitry, and leads connected electrically to the circuitry and extending from the body for mounting the sensor and making connections with the circuitry.

Abstract: A method of manufacturing a stacked thin film piezoelectric filter includes the steps of forming a lower thin film piezoelectric resonator on a substrate, measuring a frequency of the lower thin film piezoelectric resonator and adjusting the frequency, forming an acoustic coupling layer on the lower thin film piezoelectric resonator whose frequency has been adjusted, forming the stacked thin film piezoelectric filter by forming an upper thin film piezoelectric resonator on the acoustic coupling layer, and measuring a frequency of the upper thin film piezoelectric resonator and adjusting the frequency.

Abstract: A method of fabricating a multi-band filter module is provided. The method includes forming a Film Bulk Acoustic Resonator (FBAR) on a piezoelectric substrate by forming a resonant part on the piezoelectric substrate and then an air gap recessed on a surface of the piezoelectric substrate and positioned under the resonant part; and forming a Surface Acoustic Wave (SAW) device on the piezoelectric substrate in which the steps of forming the FBAR and the SAW are concurrently performed.

Abstract: The invention relates to a laterally coupled bulk acoustic wave (LBAW) filter comprising a vibration layer for carrying bulk acoustic waves, electrode means comprising a first electrode coupled to the vibration layer for exciting to the vibration layer at least one longitudinal wave mode having a first frequency band and one shear wave mode having a second frequency band, and a second electrode coupled to the vibration layer for sensing the filter pass signal, the first and second electrodes being laterally arranged with respect to each other, and an acoustic reflector structure in acoustic connection with the vibration layer. According to the invention, the reflector structure is adapted to acoustically isolate the vibration layer from its surroundings at the first frequency band more efficiently than at the second frequency band for suppressing the effect of the shear wave mode at the second frequency band from the filter pass signal. The invention helps to improve the quality of LBAW filter passbands.

Abstract: A quartz crystal unit has a quartz crystal tuning fork resonator having a thickness within a range of 0.05 mm to 0.18 mm, and at least one groove formed in at least one of opposite main surfaces of each of first and second tuning fork tines so that a length of the at least one groove is within a range of 20% to 78% of an overall length of the resonator and less than 1.29 mm. An electrode is disposed on at least one of a base portion and a surface of the at least one groove so that the electrode of the first tuning fork tine has an electrical polarity opposite to an electrical polarity of the electrode of the second tuning fork tine. The capacitance ratio r2 of a second overtone mode of vibration of the quartz crystal tuning fork resonator is greater than 1500. The quartz crystal tuning fork resonator is housed in a case having an open end, and a lid is connected to the case.

Abstract: A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region.

Abstract: A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.

Abstract: An acoustic wave device includes: a first piezoelectric thin film resonator including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes; a decoupler film provided on the first upper electrode; and a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes, wherein the first piezoelectric film and the second piezoelectric film comprise aluminum nitride and include an element increasing a piezoelectric constant of the aluminum nitride.

Abstract: An acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output. The difference between the lowest resonant frequency and the highest resonant frequency of a plurality of resonators in the filter is at least 1.25 times the frequency separation of the resonator with the highest resonant frequency in the plurality of resonators. Another acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output to form a passband. The frequency difference between a local minimum or a local maximum of a return loss magnitude of the acoustic microwave filter and the edge of the passband is at least once the frequency separation of the resonator with the highest resonant frequency.

Abstract: Embodiments provide a solidly-mounted bulk acoustic wave (BAW) resonator and method of making same. In embodiments, the BAW resonator may include one or more extensions that are acoustical similar to active region components of the BAW resonator. Other embodiments may be described and claimed.

Abstract: In one aspect of the present invention, an integrated wafer level package includes a first wafer and a second wafer spaced apart to define a first gap therebetween, a first bulk acoustic wave (BAW) filter disposed on the first wafer and a second BAW filter disposed on the second wafer, where the second BAW filter faces directly the first BAW filter to define a second gap therebetween, a seal ring disposed between the first wafer and the second wafer in the first gap such that a seal is formed surrounding the first BAW filter and the second BAW filter and defining a cavity between the seal ring and the first BAW filter and the second BAW filter, and at least one external contact accessible externally to the wafer level package and electrically coupled to at least one of the first BAW filter and the second BAW filter.

Abstract: In one aspect of the invention, the acoustic wave resonator includes a resonator structure having a first electrode, a piezoelectric layer formed on the first electrode, and a second electrode formed on the piezoelectric layer, and a composite layered structure associated with the resonator structure such that the immunity of the acoustic wave resonator to environmental change and aging effects is improved, the trimming sensitivity is substantially minimized, and/or dispersion characteristics of the acoustic wave resonator is optimized.

Abstract: A solidly mounted resonator (SMR) device includes an acoustic reflector having stacked acoustic reflector layer pairs, each of which includes a low acoustic impedance layer formed of low acoustic impedance material stacked on a high acoustic impedance layer formed of high acoustic impedance material. The SMR device further includes a bottom electrode disposed on the acoustic reflector, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. A collar is formed outside a main active region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode, and at least one frame is disposed within the main active region. The collar has an inner edge substantially aligned with a boundary of or overlapping the main active region, and the at least one frame has an outer edge substantially aligned with the boundary of the main active region.

Abstract: An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and an air cavity disposed in the substrate below at least a portion of a main membrane region defined by an overlap between the first electrode. The acoustic resonator structure may further comprise various integrated structures at or around the main membrane region to improve its electrical performance.

Abstract: An acoustic resonator structure comprises a substrate having an air cavity, an acoustic stack disposed over the substrate and comprising a piezoelectric material disposed between a first electrode and a second electrode, and an acoustic reflector disposed over the substrate and comprising a single pair of acoustic impedance layers configured to reflect acoustic waves produced by vibration of the acoustic stack, wherein at least one of the acoustic impedance layers comprises a temperature compensating material.

Abstract: An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted into the piezoelectric film, is located in at least a part of an outer periphery region in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, and is not located in a center region of the resonance region.

Abstract: In one aspect of the invention, an acoustic wave device includes a substrate, an acoustic isolator formed in or on the substrate, a bottom electrode formed on the acoustic isolator, a piezoelectric layer formed on the bottom electrode, a top electrode formed on the piezoelectric layer, and boundary means such as a gasket surrounding one of the first and second electrodes whose perimeter is aligned inside the perimeter of the acoustic isolator. The gasket has a lateral side having a wall profile, a curve profile, a multi-step profile, a gradually variable profile, or a combination of them.

Abstract: An elastic wave device includes a medium layer, a piezoelectric body, and an IDT electrode that are disposed on a supporting substrate. The medium layer is made of a medium containing a low-velocity medium in which a propagation velocity of a same bulk wave as that which is a main vibration component of an elastic wave propagating in the piezoelectric body and being used is lower than a propagation velocity of the elastic wave, and a high-velocity medium in which the propagation velocity of the same bulk wave as that which is a main vibration component of the elastic wave is higher than the propagation velocity of the elastic wave.

Abstract: A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.